CN202663107U - Voltage amplitude limiting system of antenna signal in radio frequency identification - Google Patents
Voltage amplitude limiting system of antenna signal in radio frequency identification Download PDFInfo
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- CN202663107U CN202663107U CN 201220316416 CN201220316416U CN202663107U CN 202663107 U CN202663107 U CN 202663107U CN 201220316416 CN201220316416 CN 201220316416 CN 201220316416 U CN201220316416 U CN 201220316416U CN 202663107 U CN202663107 U CN 202663107U
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Abstract
The utility model discloses a voltage amplitude limiting system of an antenna signal in a radio frequency identification. The voltage amplitude limiting system comprises a first N channel enhanced field effect tube, a second N channel enhanced field effect tube, a third N channel enhanced field effect tube, a fourth N channel enhanced field effect tube, a fifth resistor, a first capacitor, a second capacitor and a plurality of serially connected P channel enhanced field effect tubes, wherein the plurality of serially connected P channel enhanced field effect tubes are connected in parallel with the first capacitor to form a series-parallel connection line. One end of a serial connection branch of the second capacitor and the fifth resistor is connected with a line between a drain electrode of the third N channel enhanced field effect tube and a drain electrode of the fourth N channel enhanced field effect tube, the other end of the serial connection branch is connected with a line between the plurality of serially connected P channel enhanced field effect tubes and the fourth resistor. By adopting the structure, no influence is caused to power when voltage amplitude limit is realized for an antenna, and the convenience is brought for the operation.
Description
Technical field
The utility model relates to the radio-frequency technique field, specifically the voltage limiter system of aerial signal in the electronic tag.
Background technology
Radio-frequency (RF) identification is one of the most contactless Target Recognition of current application, and it has the advantages such as noncontact, read-write is flexible, speed is fast, fail safe is high, therefore is widely used in every field.Radio-frequency recognition system mainly comprises reader and electronic tag, the energy that electronic tag receives reader can be affected by the angle between operating distance and the reader antenna, the voltage that electronic tag is sensed may be larger, so must there be independent modular circuit to realize amplitude limit, with limiting voltage within limits, breakdown to prevent the receiving metal-oxide-semiconductor grid.The simplest direct measure of amplitude limit is to reduce coupling coefficient, people usually reduce coupling coefficient by the operating distance of adjusting reader and electronic tag or the input capacitance of adjusting electronic tag now, wherein, adopting the operating distance of adjusting reader and electronic tag is to be difficult to hold for operating personnel, and the method does not gear to actual circumstances; Change the input capacitance of electronic tag, namely be to change resonance frequency, reduce coupling coefficient, the power that transmits in the electronic tag also can reduce, the realization of electric capacity can take larger chip area in large scale integrated circuit design, and the parameter of electric capacity is floated relatively large.
The utility model content
The purpose of this utility model is to overcome the deficiencies in the prior art, and the control of a kind of convenient operation is provided, and is simple in structure, and can not affect the voltage limiter system of aerial signal in the electronic tag of delivering power when carrying out the voltage amplitude limit.
The purpose of this utility model is achieved through the following technical solutions: the voltage limiter system of aerial signal in the electronic tag, comprise a N channel enhancement field effect transistor, the 2nd N channel enhancement field effect transistor, the 3rd N channel enhancement field effect transistor, the 4th N channel enhancement field effect transistor, the P-channel enhancement type field effect transistor of the first electric capacity and a plurality of series connection, the 3rd N channel enhancement field effect transistor, the 4th N channel enhancement field effect transistor and a plurality of P-channel enhancement type field effect transistor are the metal-oxide-semiconductor that diode connects, the drain electrode of described the 3rd N channel enhancement field effect transistor is connected with source electrode to drain with the 4th N channel enhancement field effect transistor drain electrode and a N channel enhancement field effect transistor and is connected, the drain electrode of the 2nd N channel enhancement field effect transistor is connected with the 4th N channel enhancement field effect transistor source electrode, the one N channel enhancement field effect transistor source electrode and the 2nd N channel enhancement field effect transistor source grounding, connect respectively and consist of the connection in series-parallel circuit with the first Capacitance parallel connection behind the 3rd resistance and the 4th resistance in the series arm two ends of the P-channel enhancement type field effect transistor of described a plurality of series connection, connection between this connection in series-parallel circuit one end and the drain electrode of the 3rd N channel enhancement field effect transistor and the drain electrode of the 4th N channel enhancement field effect transistor, its other end ground connection, the grid of a described N channel enhancement field effect transistor and the 2nd N channel enhancement field effect transistor all with a plurality of P-channel enhancement type field effect transistor of connecting and the connection between the 4th resistance; Described the second electric capacity is connected with the 5th resistance, connection between series arm one end of the second electric capacity and the 5th resistance and the drain electrode of the 3rd N channel enhancement field effect transistor and the drain electrode of the 4th N channel enhancement field effect transistor, its other end and a plurality of P-channel enhancement type field effect transistor of connecting and the connection between the 4th resistance.The metal-oxide-semiconductor that diode connects in the utility model is that grid and the source electrode with metal-oxide-semiconductor links together, because there is leakage current in metal-oxide-semiconductor under certain voltage, so the metal-oxide-semiconductor that diode connects in the utility model is used for simulating the resistance that resistance is very large, and can realize by the parameter of adjusting metal-oxide-semiconductor control to resistance.
Be connected with the first resistance on the circuit between described N channel enhancement field effect transistor drain electrode and the 3rd N channel enhancement field effect transistor source electrode; Be connected with the second resistance on the circuit between described the 2nd N channel enhancement field effect transistor drain electrode and the 4th N channel enhancement field effect transistor source electrode.
As preferably, the quantity of described P-channel enhancement type field effect transistor is five.
The utility model is when using, a signal input part of antenna is connected on the circuit between the drain electrode of the first resistance and a N channel enhancement field effect transistor, another signal input part of antenna is connected on the circuit between the drain electrode of the second resistance and the 2nd N channel enhancement field effect transistor, the 3rd N channel enhancement field effect transistor, the 4th N channel enhancement field effect transistor and the first electric capacity are used for the sampling radiofrequency signal, the 3rd resistance, the P-channel enhancement type field effect transistor of the 4th resistance and a plurality of series connection forms with reference to control voltage, the one N channel enhancement field effect transistor and the 2nd N channel enhancement field effect transistor are leak-off pipe, and a N channel enhancement field effect transistor and the 2nd N channel enhancement field effect transistor are connected in parallel on antenna ends and carry out the amplitude limit shunting.When the signal of sampling is higher than reference level, the electric current of the 4th resistance of flowing through increases, therefore the current potential of controlling a N channel enhancement field effect transistor and the 2nd N channel enhancement field effect transistor grid improves, increase the ducting capacity of a N channel enhancement field effect transistor and the 2nd N channel enhancement field effect transistor, the electric current of the N channel enhancement field effect transistor of flowing through and the 2nd N channel enhancement field effect transistor increases, reduce the pay(useful) load of label antenna, thus the voltage amplitude of restriction aerial signal.The connection in series-parallel circuit that the P-channel enhancement type field effect transistor of the 3rd resistance, the 4th resistance, the first electric capacity and a plurality of series connection consists of in the utility model is the low-pass filtering loop, it changes the generation reaction to low frequency signal, this low-pass filtering circuit feedback is adjusted the conducting degree of a N channel enhancement field effect transistor and the 2nd N channel enhancement field effect transistor, thereby voltage is stable when guaranteeing the utility model application; The 5th resistance and the second electric capacity consist of high pass path, and rapid reflection is made in its sudden change to received signal, increases the amplitude limit ability with this.
Compared with prior art, the utlity model has following beneficial effect: the utility model comprises a N channel enhancement field effect transistor, the 2nd N channel enhancement field effect transistor, the 3rd N channel enhancement field effect transistor, the 4th N channel enhancement field effect transistor, the 5th resistance, the first electric capacity, the P-channel enhancement type field effect transistor of the second electric capacity and a plurality of series connection, the utility model uses the quantity of electronic component few, overall structure is simple, volume is little when being integrated on the module, be convenient to realize, cost is low, and the utility model passes through to improve the grid voltage of a N channel enhancement field effect transistor and the second enhancement mode field effect transistor when using, can not exert an influence to power, when being higher than certain voltage value, input voltage makes shunt circuit conducting in parallel, make the electric current of circuit become large, thereby make the voltage voltage stabilizing in certain scope.
Description of drawings
Fig. 1 is the structural representation of the utility model embodiment.
The corresponding name of Reference numeral is called in the accompanying drawing: N1-the one N channel enhancement field effect transistor, N2-the 2nd N channel enhancement field effect transistor, N3-the 3rd N channel enhancement field effect transistor, N4-the 4th N channel enhancement field effect transistor, P1-first P-channel enhancement type field effect transistor, P2-second P-channel enhancement type field effect transistor, P3-the 3rd P-channel enhancement type field effect transistor, P4-the 4th P-channel enhancement type field effect transistor, P5-the 5th P-channel enhancement type field effect transistor, C1-first electric capacity, C2-second electric capacity, R1-first resistance, R2-second resistance, R3-the 3rd resistance, R4-the 4th resistance, R5-the 5th resistance, Ant1-first antenna signal input part, Ant2-second antenna signal input part.
Embodiment
The utility model is described in further detail below in conjunction with embodiment and accompanying drawing, but execution mode of the present utility model is not limited to this.
Embodiment:
As shown in Figure 1, the voltage limiter system of aerial signal in the electronic tag, comprise shell and setting internal circuit in the enclosure, internal circuit comprises a N channel enhancement field effect transistor N1, the 2nd N channel enhancement field effect transistor N2, the 3rd N channel enhancement field effect transistor N3, the 4th N channel enhancement field effect transistor N4, the 5th resistance R 5, the first capacitor C 1, the P-channel enhancement type field effect transistor of the second capacitor C 2 and a plurality of series connection, wherein, the 3rd N channel enhancement field effect transistor N3, the 4th N channel enhancement field effect transistor N4 and a plurality of P-channel enhancement type field effect transistor are the metal-oxide-semiconductor that diode connects, the metal-oxide-semiconductor that connects at this diode is that the grid in the metal-oxide-semiconductor is connected with source electrode, the quantity of P-channel enhancement type field effect transistor is preferably five, is the first P-channel enhancement type field effect transistor P1 of series connection, the second P-channel enhancement type field effect transistor P2, the 3rd P-channel enhancement type field effect transistor P3, the 4th P-channel enhancement type field effect transistor P4 and the 5th P-channel enhancement type field effect transistor P5.
The drain electrode of the 3rd N channel enhancement field effect transistor N3 is connected with source electrode to drain with the 4th N channel enhancement field effect transistor N4 drain electrode and a N channel enhancement field effect transistor N1 and is connected, the drain electrode of the 2nd N channel enhancement field effect transistor N2 is connected with the 4th N channel enhancement field effect transistor N4 source electrode, the one N channel enhancement field effect transistor N1 source electrode and the 2nd N channel enhancement field effect transistor N2 source grounding, be connected with on the circuit between the one N channel enhancement field effect transistor N1 drain electrode and the 3rd N channel enhancement field effect transistor N3 source electrode on the circuit between the first resistance R 1, the two N channel enhancement field effect transistor N2 drain electrode and the 4th N channel enhancement field effect transistor N4 source electrode and be connected with the second resistance R 2.Connect respectively after the 3rd resistance R 3 and the 4th resistance R 4 and the first capacitor C 1 formation connection in series-parallel circuit in parallel in the series arm two ends of the P-channel enhancement type field effect transistor of five series connection, connection between this connection in series-parallel circuit one end and the 3rd N channel enhancement field effect transistor N3 drain electrode and the 4th N channel enhancement field effect transistor N4 drain electrode, its other end ground connection.The grid of the one N channel enhancement field effect transistor N1 and the 2nd N channel enhancement field effect transistor N2 all with a plurality of P-channel enhancement type field effect transistor of connecting and the 4th resistance R 4 between connection.The second capacitor C 2 is connected with the 5th resistance R 5, connection between the connection between series arm one end of the second capacitor C 2 and the 5th resistance R 5 and the 3rd N channel enhancement field effect transistor N3 drain electrode and the 4th N channel enhancement field effect transistor N4 drain electrode, its other end and a plurality of P-channel enhancement type field effect transistor of connecting and the 4th resistance R 4.
Be connected with the first antenna signal input part Ant1 on the circuit between the first resistance R 1 and the N channel enhancement field effect transistor N1 drain electrode, be connected with the second antenna signal input part Ant2 on the circuit between the second resistance R 2 and the 2nd N channel enhancement field effect transistor N2 drain electrode.
As mentioned above, then can well realize the utility model.
Claims (3)
1. the voltage limiter system of aerial signal in the electronic tag, it is characterized in that: comprise a N channel enhancement field effect transistor (N1), the 2nd N channel enhancement field effect transistor (N2), the 3rd N channel enhancement field effect transistor (N3), the 4th N channel enhancement field effect transistor (N4), the 5th resistance (R5), the first electric capacity (C1), the P-channel enhancement type field effect transistor of the second electric capacity (C2) and a plurality of series connection, the 3rd N channel enhancement field effect transistor (N3), the 4th N channel enhancement field effect transistor (N4) and a plurality of P-channel enhancement type field effect transistor are the metal-oxide-semiconductor that diode connects, the drain electrode of described the 3rd N channel enhancement field effect transistor (N3) is connected with source electrode to drain with the 4th N channel enhancement field effect transistor (N4) drain electrode and a N channel enhancement field effect transistor (N1) and is connected, the drain electrode of the 2nd N channel enhancement field effect transistor (N2) is connected with the 4th N channel enhancement field effect transistor (N4) source electrode, the one N channel enhancement field effect transistor (N1) source electrode and the 2nd N channel enhancement field effect transistor (N2) source grounding, connect respectively behind the 3rd resistance (R3) and the 4th resistance (R4) and the first electric capacity (C1) formation in parallel connection in series-parallel circuit in the series arm two ends of the P-channel enhancement type field effect transistor of described a plurality of series connection, connection between this connection in series-parallel circuit one end and the drain electrode of the 3rd N channel enhancement field effect transistor (N3) and the drain electrode of the 4th N channel enhancement field effect transistor (N4), its other end ground connection, a described N channel enhancement field effect transistor (N1) and the 2nd both grids of N channel enhancement field effect transistor (N2) all with a plurality of P-channel enhancement type field effect transistor of connecting and the 4th resistance (R4) between connection; Described the second electric capacity (C2) is connected with the 5th resistance (R5), connection between the connection between the drain electrode of series arm one end of the second electric capacity (C2) and the 5th resistance (R5) and the 3rd N channel enhancement field effect transistor (N3) and the 4th N channel enhancement field effect transistor (N4) drain, its other end and a plurality of P-channel enhancement type field effect transistor of connecting and the 4th resistance (R4).
2. the voltage limiter system of aerial signal in the electronic tag according to claim 1 is characterized in that: be connected with the first resistance (R1) on the circuit between a described N channel enhancement field effect transistor (N1) drain electrode and the 3rd N channel enhancement field effect transistor (N3) source electrode; Be connected with the second resistance (R2) on the circuit between described the 2nd N channel enhancement field effect transistor (N2) drain electrode and the 4th N channel enhancement field effect transistor (N4) source electrode.
3. the voltage limiter system of aerial signal in the electronic tag according to claim 1 and 2, it is characterized in that: the quantity of described P-channel enhancement type field effect transistor is five.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220316416 CN202663107U (en) | 2012-07-03 | 2012-07-03 | Voltage amplitude limiting system of antenna signal in radio frequency identification |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220316416 CN202663107U (en) | 2012-07-03 | 2012-07-03 | Voltage amplitude limiting system of antenna signal in radio frequency identification |
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| Publication Number | Publication Date |
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| CN202663107U true CN202663107U (en) | 2013-01-09 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN 201220316416 Expired - Fee Related CN202663107U (en) | 2012-07-03 | 2012-07-03 | Voltage amplitude limiting system of antenna signal in radio frequency identification |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103532119A (en) * | 2012-07-03 | 2014-01-22 | 成都市宏山科技有限公司 | Voltage amplitude-limiting system of antenna signal in electronic tag |
-
2012
- 2012-07-03 CN CN 201220316416 patent/CN202663107U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103532119A (en) * | 2012-07-03 | 2014-01-22 | 成都市宏山科技有限公司 | Voltage amplitude-limiting system of antenna signal in electronic tag |
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| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130109 Termination date: 20130703 |