CN202586327U - Charge pump output protection driving device for near field communication (NFC) emission device - Google Patents
Charge pump output protection driving device for near field communication (NFC) emission device Download PDFInfo
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- CN202586327U CN202586327U CN 201220233065 CN201220233065U CN202586327U CN 202586327 U CN202586327 U CN 202586327U CN 201220233065 CN201220233065 CN 201220233065 CN 201220233065 U CN201220233065 U CN 201220233065U CN 202586327 U CN202586327 U CN 202586327U
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Abstract
The utility model relates to a charge pump output protection driving device for a near field communication (NFC) emission device. On the conventional basis of a first P-channel metal oxide semiconductor (PMOS) pipe and a first N-channel metal oxide semiconductor (NMOS) pipe, a second PMOS pipe and a second NMOS pipe which serve as protection pipes are arranged and used for protecting output voltage; at least one level displacement module is also arranged and used for converting input voltage of 0 to 3.3 V into voltage of -3.3 to 0 V and outputting the voltage of -3.3 to 0 V to a grate of the first NMOS pipe for driving. According to the charge pump output protection driving device, two normal-pressure common pipes are used as the protection pipes, so that over-voltage output by a charge pump can be protected; a circuit is simple in structure and reliable; and a demand of the charge pump for outputting power of -3.3 to 3.3 V to the NFC emission device can be met.
Description
Technical field
The utility model relates near field communication (NFC) field (NFC), particularly a kind of charge pump output protection drive unit that is used for the NFC emitter.
Background technology
For traditional emitter (see figure 1) based near field communication (NFC) (NFC), its active transmission circuit generally has a power pins to connect the positive voltage of 3.3V, and another power pins ground connection is arranged.This traditional NFC emitter has the shortcoming that power output is little, output ripple is big.For this reason, in a kind of novel NFC emitter (see figure 2), through on that power pins of the original ground connection of active transmission circuit, circuit connects a charge pump, and is provided-negative voltage of 3.3V by charge pump, can effectively address the above problem.
As shown in Figure 3 is existing a kind of circuit structure to NFC emitter output 0 ~ 3.3V; It comprises a PMOS pipe M2 and the complementary MOS inverter that NMOS pipe M1 connects and composes; That is, the M1 pipe links to each other as input with the grid of M2 pipe, and the M1 pipe links to each other as output with the drain electrode of M2 pipe; The source electrode of M2 pipe connects positive supply, the source ground of M1 pipe.Yet the power supply owing to providing to NFC emitter shown in Figure 2 need be become by original 0V ~ 3.3V-3.3V ~ 3.3V, only is difficult to realize voltage transitions and overvoltage protection through circuit structure shown in Figure 3.
The utility model content
The purpose of the utility model provides a kind of charge pump output protection drive unit of the NFC of being used for emitter; Through the level shift module is set and with two normal pressure common tube as protection tube; High-voltage tube need be set realize that promptly circuit structure is simple and reliable to the overvoltage protection of charge pump output.
In order to achieve the above object; The technical scheme of the utility model provides a kind of charge pump output protection drive unit of the NFC of being used for emitter; Be characterized in that said output protection drive unit is arranged at the electric charge delivery side of pump, said charge pump is in order to provide negative voltage to the NFC emitter; Comprise the PMOS pipe that circuit connects in the said output protection drive unit, NMOS pipe, the 2nd PMOS pipe, the 2nd NMOS pipe, and at least one level shift module;
Wherein, the input of said output protection device is connected to the grid that a said NMOS manages through said level shift module;
And the source electrode of said PMOS pipe connects positive supply, and the drain electrode of PMOS pipe also links to each other with the source electrode of the 2nd PMOS pipe; The source electrode of said the 2nd NMOS pipe links to each other with the drain electrode of NMOS pipe, and the source electrode of said NMOS pipe connects negative supply; The drain electrode of said the 2nd PMOS pipe also links to each other with the drain electrode of said the 2nd NMOS pipe, as the output of said output protection device.
Grid at said the 2nd PMOS pipe is applied with voltage signal Vb1, and, when selecting this voltage signal Vb1, should make the source voltage of said the 2nd PMOS pipe be not less than the puncture voltage that a said PMOS manages;
And, be applied with voltage signal Vb2 at the grid of said the 2nd NMOS pipe, and, when selecting this voltage signal Vb2, should make the source voltage of said the 2nd NMOS pipe not be higher than the puncture voltage that a said NMOS manages.
The input of said output protection device is applied with the square-wave pulse signal Vin of 0V ~ 3.3V, and through after the processing of said level shift module, this input signal Vin can convert into-the signal Vx of 3.3V ~ 0V, and outputs to the grid of said NMOS pipe.
The source electrode of said NMOS pipe connects-negative supply of 3.3V;
When the input signal Vin of said output protection drive unit was 3.3V, said PMOS pipe ended; At this moment, the signal Vx that is converted to by this input signal Vin is 0V, the conducting of then said NMOS pipe, and obtain at the output of said output protection device-the output signal of 3.3V via said the 2nd NMOS pipe.
The input of said output protection device is connected directly to the grid of said PMOS pipe; Perhaps through the grid that another level shift module is connected to said PMOS pipe is set; Thereby will be applied to the 0V ~ 3.3V signal Vin of the input of said output protection device, output to the grid of said PMOS pipe.
The source electrode of said PMOS pipe connects+positive supply of 3.3V;
When the input signal Vin of said output protection device was 0V, the signal Vx that is converted to was-3.3V that said NMOS pipe ends; At this moment, said PMOS pipe is managed conducting, and obtains the output signal of 3.3V at the output of said output protection device via said the 2nd NMOS pipe.
Compared with prior art; The said charge pump output protection drive unit that is used for the NFC emitter of the utility model; Increased the 2nd PMOS pipe and the 2nd NMOS pipe, respectively the output voltage of original PMOS pipe and NMOS pipe has been protected as protection tube; Also increased voltage transitions that at least one level shift module will be input as 0V ~ 3.3V voltage, and the grid that outputs to NMOS pipe drives for-3.3V ~ 0V.Two protection tubes of the utility model can be with the normal pressure common tube of 3.3V technology, to the voltage of 5V realizes protection, satisfies the needs of charge pump when NFC emitter output-3.3V ~ 3.3V power supply.
Description of drawings
Fig. 1 is the structured flowchart of the NFC emitter of traditional use 0 ~ 3.3V power supply;
Fig. 2 provides-structured flowchart during the 3.3V power supply to the NFC emitter through charge pump;
Fig. 3 is existing a kind of electrical block diagram from 0 ~ 3.3V to NFC emitter shown in Figure 1 that can export;
Fig. 4 is the electrical block diagram that is used for the charge pump output protection drive unit of NFC emitter as shown in Figure 2 in the utility model.
Embodiment
The described output protection drive unit of the utility model, especially be applicable to for the NFC emitter provide negative voltage (for example be-3.3V) charge pump on.Shown in Figure 2 is a kind of example structure of this NFC emitter.
As shown in Figure 4; The said output protection drive unit of the utility model has increased at least one level shift module (level shift) and has managed (managing and B2 manages hereinafter to be referred as B1) with the 2nd NMOS as the 2nd PMOS pipe of protection tube on the basis of original PMOS pipe and NMOS pipe (hereinafter to be referred as M2 pipe and M1 pipe).
Concrete, the input of said output protection device is connected to the grid that M1 manages through a level shift module 1.Therefore, the square-wave pulse signal Vin of the 0V ~ 3.3V that applies at the input of said output protection device through after the processing of this level shift module 1, can convert into-the signal Vx of 3.3V ~ 0V, and outputs to the grid of M1 pipe.
The input of said output protection device can be connected directly to the grid of M2 pipe, also can be connected to the grid of M2 pipe through another level shift module 2.Therefore, can the signal Vin of the 0V ~ 3.3V that apply at the input of output protection device mentioned above be outputed to the grid of M2 pipe.
In said output protection device, the source electrode of M2 pipe meets positive supply 3.3V, and the drain electrode of M2 pipe links to each other with the source electrode of B1 pipe; And, the source electrode of B2 pipe is linked to each other with the drain electrode of M1 pipe, the source electrode of M1 pipe meets negative voltage-3.3V; Also the drain electrode with B1 pipe links to each other with the drain electrode of B2 pipe, and as the output of said output protection device, hereinafter can further specify and how to obtain at this output-output voltage of 3.3V ~ 3.3V.
When the signal Vin of the said output protection device of input was 0V, the signal Vx that is converted to was-3.3V that the M1 pipe ends.At this moment, M2 manages conducting, and obtains the output signal of 3.3V at the output of said output protection device via the B1 pipe.And when input signal Vin was 3.3V, the M2 pipe ended; At this moment, the signal Vx that is converted to is 0V, and M1 manages conducting, and obtains at the output of said output protection device-the output signal of 3.3V via B2 pipe.
In the above-mentioned course of work, the B1 pipe is as the protection tube to the M2 output voltage; Grid at the B1 pipe is applied with voltage Vb1, and, when selecting this voltage Vb1, should make the source voltage of B1 pipe be not less than the puncture voltage (breakdown voltage) that M2 manages.In addition, the B2 pipe is as the protection tube to the M1 output voltage; Grid at the B2 pipe is applied with voltage Vb2, and, when selecting this voltage Vb2, should make the source voltage of B2 pipe not be higher than the puncture voltage that M1 manages.
In sum, the said charge pump output protection drive unit that is used for the NFC emitter of the utility model has increased the 2nd PMOS pipe and the 2nd NMOS pipe as protection tube, respectively the output voltage of original PMOS pipe and NMOS pipe is protected; Also increased voltage transitions that at least one level shift module will be input as 0V ~ 3.3V voltage, and the grid that outputs to NMOS pipe drives for-3.3V ~ 0V.Two protection tubes of the utility model can be with the normal pressure common tube of 3.3V technology, to the voltage of 5V realizes protection, satisfies the needs of charge pump when NFC emitter output-3.3V ~ 3.3V power supply.
Although the content of the utility model has been done detailed introduction through above-mentioned preferred embodiment, will be appreciated that above-mentioned description should not be considered to the restriction to the utility model.After those skilled in the art have read foregoing, for the multiple modification of the utility model with to substitute all will be conspicuous.Therefore, the protection range of the utility model should be limited appended claim.
Claims (6)
1. a charge pump output protection drive unit that is used for the NFC emitter is characterized in that,
Said output protection drive unit is arranged at the electric charge delivery side of pump, and said charge pump is in order to provide negative voltage to the NFC emitter; Comprise the PMOS pipe (M2) that circuit connects in the said output protection drive unit, a NMOS manages (M1), and the 2nd PMOS manages (B1), and the 2nd NMOS manages (B2), and at least one level shift module (1);
Wherein, the input of said output protection device is connected to the grid that a said NMOS manages (M1) through said level shift module (1);
And the source electrode of said PMOS pipe (M2) connects positive supply, and the drain electrode of PMOS pipe (M2) also links to each other with the source electrode of the 2nd PMOS pipe (B1); The source electrode of said the 2nd NMOS pipe (B2) links to each other with the drain electrode that a NMOS manages (M1), and the source electrode of said NMOS pipe (M1) connects negative supply; The drain electrode of said the 2nd PMOS pipe (B1) also links to each other with the drain electrode of said the 2nd NMOS pipe (B2), as the output of said output protection device.
2. be used for the charge pump output protection drive unit of NFC emitter according to claim 1, it is characterized in that,
Grid at said the 2nd PMOS pipe (B1) is applied with voltage signal Vb1, and, when selecting this voltage signal Vb1, should make the source voltage of said the 2nd PMOS pipe (B1) be not less than the puncture voltage that a said PMOS manages (M2);
And, be applied with voltage signal Vb2 at the grid of said the 2nd NMOS pipe (B2), and, when selecting this voltage signal Vb2, should make the source voltage of said the 2nd NMOS pipe (B2) not be higher than the puncture voltage that a said NMOS manages (M1).
3. like the said charge pump output protection drive unit that is used for the NFC emitter of claim 2, it is characterized in that,
The input of said output protection device is applied with the square-wave pulse signal Vin of 0V ~ 3.3V; After processing through said level shift module (1); This input signal Vin can convert into-the signal Vx of 3.3V ~ 0V, and output to the grid of said NMOS pipe (M1).
4. like the said charge pump output protection drive unit that is used for the NFC emitter of claim 3, it is characterized in that,
The source electrode of said NMOS pipe (M1) connects-negative supply of 3.3V;
When the input signal Vin of said output protection drive unit was 3.3V, said PMOS pipe (M2) ended; At this moment, the signal Vx that is converted to by this input signal Vin is 0V, (M1) conducting of then said NMOS pipe, and obtain at the output of said output protection device-the output signal of 3.3V via said the 2nd NMOS pipe (B2).
5. like the said charge pump output protection drive unit that is used for the NFC emitter of claim 3, it is characterized in that,
The input of said output protection device is connected directly to the grid of said PMOS pipe (M2); Perhaps through the grid that another level shift module (2) is connected to said PMOS pipe (M2) is set; Thereby will be applied to the 0V ~ 3.3V signal Vin of the input of said output protection device, output to the grid of said PMOS pipe (M2).
6. like the said charge pump output protection drive unit that is used for the NFC emitter of claim 5, it is characterized in that,
The source electrode of said PMOS pipe (M2) connects+positive supply of 3.3V;
When the input signal Vin of said output protection device was 0V, the signal Vx that is converted to was-3.3V that said NMOS pipe (M1) ends; At this moment, said PMOS pipe (M2) is managed conducting, and obtains the output signal of 3.3V at the output of said output protection device via said the 2nd NMOS pipe (B2).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220233065 CN202586327U (en) | 2012-05-23 | 2012-05-23 | Charge pump output protection driving device for near field communication (NFC) emission device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220233065 CN202586327U (en) | 2012-05-23 | 2012-05-23 | Charge pump output protection driving device for near field communication (NFC) emission device |
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| Publication Number | Publication Date |
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| CN202586327U true CN202586327U (en) | 2012-12-05 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220233065 Withdrawn - After Issue CN202586327U (en) | 2012-05-23 | 2012-05-23 | Charge pump output protection driving device for near field communication (NFC) emission device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102684180A (en) * | 2012-05-23 | 2012-09-19 | 乐鑫信息科技（上海）有限公司 | Charge pump output protection drive device for NFC (near field communication) emitting device |
-
2012
- 2012-05-23 CN CN 201220233065 patent/CN202586327U/en not_active Withdrawn - After Issue
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102684180A (en) * | 2012-05-23 | 2012-09-19 | 乐鑫信息科技（上海）有限公司 | Charge pump output protection drive device for NFC (near field communication) emitting device |
| CN102684180B (en) * | 2012-05-23 | 2015-07-01 | 乐鑫信息科技（上海）有限公司 | Charge pump output protection drive device for NFC (near field communication) emitting device |
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| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20121205 Effective date of abandoning: 20150701 |
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| RGAV | Abandon patent right to avoid regrant |