CN203504396U - Parallel-drive circuit for large-power IGBT modules - Google Patents
Parallel-drive circuit for large-power IGBT modules Download PDFInfo
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- CN203504396U CN203504396U CN201320506486.7U CN201320506486U CN203504396U CN 203504396 U CN203504396 U CN 203504396U CN 201320506486 U CN201320506486 U CN 201320506486U CN 203504396 U CN203504396 U CN 203504396U
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Abstract
The utility model discloses a parallel-drive circuit for large-power IGBT modules, and the circuit comprises a driver core and driving expansion boards connected between the driver core and each large-power IGBT module. Each expansion board consists of N drive expansion modules, wherein N is greater than or equal to 2. The input end of each expansion board is connected with the drive output end of the driver core. The drive output end is connected with the grid electrode of each large-power IGBT module. The power supply of each drive expansion module gets power from the input end of the driver core. The source electrode of each large-power IGBT module is connected with the VCE end of the driver core. Each drive expansion module comprises one or more push-pull circuits and a power module for supplying working power to each push-pull circuit. The input ends of the push-pull circuits are the input ends of the drive expansion modules, and are respectively connected with the drive output end of the diver core. The output ends of the push-pull circuits are the output ends of the drive expansion modules, and are respectively connected with the grid electrodes of the large-power IGBT modules. According to the utility model, the driving power can be expanded infinitely, thereby effectively solving a technical problem of the parallel drive of the large-power IGBT modules.
Description
Technical field
The utility model relates to Driving technique field when high-power IGBT module is in parallel to be used, and is specifically related to a kind of high-power IGBT module parallel driver circuit.
Background technology
In high-power photovoltaic application scenario, increase along with power grade, use the parallel connection of high-power IGBT module to become main mode, but operable high-power IGBT module driver only has concept and Infineon etc. several in the market, their fan-out capability only has 4W(single channel), can only drive 2 large power models, and the corresponding occasion that is greater than the parallel connection of 3 high-power IGBT modules but cannot meet the needs that engineering is applied.
Summary of the invention
The shortcoming existing in order to overcome above-mentioned prior art, the purpose of this utility model is to provide a kind of high-power IGBT module parallel driver circuit, can infinitely expand driving power, has effectively solved high-power IGBT module parallel drive technical barrier.
In order to achieve the above object, the utility model adopts following technical scheme:
A kind of high-power IGBT module parallel driver circuit, comprise driving core, also be included in the driving expansion board that drives core to be connected with each high-power IGBT intermodule, described driving expansion board drives expansion module to form by N, N >=2, the input of described each driving expansion module is connected with driving the drive output of core, drive output is connected with the grid of each high-power IGBT module, each drives the power supply of expansion module from driving the input power taking of core, and the source electrode of each high-power IGBT module is connected with driving the VCE end of core.
Described driving expansion module comprises one or more driving push-pull circuits and for driving push-pull circuit that the power module of the equal number of working power is provided, each input of described power module is from driving the input power taking of core, and each voltage output end of power module is connected with driving each power end in push-pull circuit; The input of described driving push-pull circuit drives the input of expansion module, is all connected with driving the drive output of core; Drive the output of push-pull circuit for driving the drive output of expansion module, be connected with the grid of each high-power IGBT module respectively.
Described high-power IGBT module is half-bridge IGBT module, and the quantity of described driving push-pull circuit and power module is two.
Compared to the prior art, tool has the following advantages the utility model:
1) this drive scheme has effectively overcome the shortcoming that drives core driving force deficiency.
2) drive the internal circuit configuration of expansion board simple, be easy to realize.
3) drive expansion board better to signal uniformity for the treatment of, guaranteed the reliability of drive system.
Accompanying drawing explanation
Fig. 1 is the utility model circuit block diagram.
Fig. 2 is the internal circuit block diagram that drives expansion board.
Embodiment
Below in conjunction with the drawings and the specific embodiments, the utility model is described in further detail.
As shown in Figure 1, a kind of high-power IGBT module of the utility model parallel driver circuit, comprise driving core, described driving core is the special-purpose driver module of existing IGBT, also be included in the driving expansion board that drives core to be connected with each high-power IGBT intermodule, described driving expansion board drives expansion module to form by N, N >=2, the input of described each driving expansion module is connected with driving the drive output of core, drive output is connected with the grid of each high-power IGBT module, each drives the power supply of expansion module from driving the input power taking of core, the driving signal that drives core to send so first passes to driving signal respectively to drive expansion module, then by each, drive expansion module to drive again each high-power IGBT module to carry out work after signal is processed, the source electrode of each high-power IGBT module is connected with driving the VCE end of core, for detection of overcurrent protection signal.
As shown in Figure 2, the present embodiment high-power IGBT module is half-bridge IGBT module, drive expansion module to comprise two driving push-pull circuits and two power modules, each input of power module is from driving the input power taking of core, and each voltage output end of power module is connected with driving each power end in push-pull circuit; The two-way input of described driving push-pull circuit drives the two-way input of expansion module, is all connected with driving the drive output of core; Drive the two-way output of push-pull circuit for driving the two-way drive output of expansion module, be connected with the grid of each half-bridge IGBT module respectively, for driving the half-bridge IGBT module of rear class.
Claims (3)
1. a high-power IGBT module parallel driver circuit, comprise driving core, it is characterized in that: be also included in the driving expansion board that drives core to be connected with each high-power IGBT intermodule, described driving expansion board drives expansion module to form by N, N >=2, the input of described each driving expansion module is connected with driving the drive output of core, drive output is connected with the grid of each high-power IGBT module, each drives the power supply of expansion module from driving the input power taking of core, and the source electrode of each high-power IGBT module is connected with driving the VCE end of core.
2. a kind of high-power IGBT module parallel driver circuit according to claim 1, it is characterized in that: described driving expansion module comprises one or more driving push-pull circuits and for driving push-pull circuit that the power module of the equal number of working power is provided, each input of described power module is from driving the input power taking of core, and each voltage output end of power module is connected with driving each power end in push-pull circuit; The input of described driving push-pull circuit drives the input of expansion module, is all connected with driving the drive output of core; Drive the output of push-pull circuit for driving the drive output of expansion module, be connected with the grid of each high-power IGBT module respectively.
3. a kind of high-power IGBT module parallel driver circuit according to claim 2, is characterized in that: described high-power IGBT module is half-bridge IGBT module, and the quantity of described driving push-pull circuit and power module is two.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320506486.7U CN203504396U (en) | 2013-08-19 | 2013-08-19 | Parallel-drive circuit for large-power IGBT modules |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320506486.7U CN203504396U (en) | 2013-08-19 | 2013-08-19 | Parallel-drive circuit for large-power IGBT modules |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203504396U true CN203504396U (en) | 2014-03-26 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320506486.7U Expired - Fee Related CN203504396U (en) | 2013-08-19 | 2013-08-19 | Parallel-drive circuit for large-power IGBT modules |
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| CN (1) | CN203504396U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109067149A (en) * | 2018-08-28 | 2018-12-21 | 苏州浪潮智能软件有限公司 | It is a kind of to facilitate the fixed Smart Power Module extended and control method |
-
2013
- 2013-08-19 CN CN201320506486.7U patent/CN203504396U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109067149A (en) * | 2018-08-28 | 2018-12-21 | 苏州浪潮智能软件有限公司 | It is a kind of to facilitate the fixed Smart Power Module extended and control method |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: TBEA SUNOASIS CO.,LTD. STATE GRID CORPORATION OF C Free format text: FORMER OWNER: TBEA SUNOASIS CO.,LTD. Effective date: 20150330 |
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| TR01 | Transfer of patent right |
Effective date of registration: 20150330 Address after: 830011 No. 399 South Changchun Road, the Xinjiang Uygur Autonomous Region, Urumqi Patentee after: TBEA SUNOASIS Co.,Ltd. Patentee after: TBEA XI'AN ELECTRIC TECHNOLOGY Co.,Ltd. Patentee after: State Grid Corporation of China Patentee after: STATE GRID XINYUAN ZHANGJIAKOU SCENERY STORAGE DEMONSTRATION POWER PLANT Co.,Ltd. Address before: 830011 No. 399 South Changchun Road, the Xinjiang Uygur Autonomous Region, Urumqi Patentee before: TBEA SUNOASIS Co.,Ltd. Patentee before: TBEA XI'AN ELECTRIC TECHNOLOGY Co.,Ltd. |
|
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140326 Termination date: 20210819 |
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| CF01 | Termination of patent right due to non-payment of annual fee |