CN205945507U - Parallelly connected drive circuit who uses of IGBT in high -power power - Google Patents
Parallelly connected drive circuit who uses of IGBT in high -power power Download PDFInfo
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- CN205945507U CN205945507U CN201620944333.4U CN201620944333U CN205945507U CN 205945507 U CN205945507 U CN 205945507U CN 201620944333 U CN201620944333 U CN 201620944333U CN 205945507 U CN205945507 U CN 205945507U
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- Prior art keywords
- igbt
- driving chip
- resistance
- power supply
- connects
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Abstract
The utility model provides a parallelly connected drive circuit who uses of IGBT in high -power power, driver chip's input positive pole links together with the control circuit power through resistance R1, driver chip's signal output foot is through the connection of resistance R3 and two bases of constituteing push -pull structure's power transistor, two projecting poles of constituteing push -pull structure's power transistor link together as IGBT's drive signal respectively through resistance R11, R21 and R31 are connected the gate pole at each IGBT, each IGBT's gate pole is connected on resistance R12, R22 and R32, is connecting transient -suppression diode ZD1, ZD2 and ZD3 between each IGBT projecting pole, and IGBT's projecting pole is connected to driver chip's feeder ear through resistance R13, R23 and R33 separately, the utility model discloses break through the restriction of IGBT device electric current to the power capacity upper limit, provide a plurality of IGBT the reliably parallelly connected circuit that uses to the power capacity has been improved.
Description
Technical field
This utility model is IGBT drive circuit used in parallel in a kind of large power supply, belongs to field of electrical equipment.
Background technology
In prior art, the power of power supply is limited by IGBT device, and jumbo power supply needs to use expensive
The IGBT of high current, even without the IGBT device of the enough high currents needing, therefore limits the appearance of unit large power supply
Amount, so need a kind of circuit to realize increasing the electric current of IGBT device.
Utility model content
In view of the shortcomings of the prior art, this utility model purpose is to provide IGBT parallel connection in a kind of large power supply to make
Drive circuit, to solve the problems, such as to propose in above-mentioned background technology, this utility model is easy to use, is easy to operate, stable
Property good, reliability is high.
To achieve these goals, this utility model is to realize by the following technical solutions：A kind of large power supply
Middle IGBT drive circuit used in parallel, including the insulation blocking electricity of driving chip, pliotron and IGBT parallel drive
Resistance, the input anode of described driving chip is linked together with control circuit power supply through resistance R1, described driving chip
Signal output foot connects the base stage with the pliotron of two composition push-pull configurations through resistance R3, and described two compositions recommend knot
The drive signal that the emitter stage of the pliotron of structure is connected together as IGBT is connected with R31 through resistance R11, R21 respectively
Gate pole in each IGBT；The gate pole of each IGBT is connected on resistance R12, R22 and R32, and each IGBT transmitting interpolar is connected to wink
State suppresses diode ZD1, ZD2 and ZD3, and the emitter stage of respective IGBT connects to driving chip through resistance R13, R23 and R33
Feeder ear, the colelctor electrode of each IGBT connects the negative electrode of diode D1, D2 and D3, the sun of diode D1, D2 and D3 respectively
Pole links together and connects to the tube voltage drop test side of driving chip, and the tube voltage drop test side of driving chip is connected to stabilivolt
The negative electrode of ZD4, the anode of ZD4 is connected on the power supply -9V of driving chip, and the input anode of optocoupler PC1 is through resistance R2 even
It is connected on the power supply+15V of driving chip, the input negative electrode of optocoupler PC1 connects to the protection signal outfan of driving chip.
Further, the power supply of described driving chip is provided by+the 15V being isolated with control circuit and -9V respectively.
Further, the negative electrode of diode D1, D2 and D3 links together and connects to the tube voltage drop inspection of driving chip
Survey end monitoring IGBT tube voltage drop.
Further, the input negative electrode of optocoupler PC1 connects protection signal outfan to driving chip by driving chip
The IGBT tube voltage drop abnormal signal monitoring delivers to circuit processed.
The beneficial effects of the utility model：The driving electricity that in a kind of large power supply of the present utility model, IGBT is used in parallel
Road, the signal output foot of driving chip is connected to the base stage of the pliotron of two composition push-pull configurations through resistance R3, with this
Improve the current output capability of driving chip；The gate pole of each IGBT is connected on resistance R12, R22 and R32, each IGBT transmitting
Interpolar is connected to Transient Suppression Diode ZD1, ZD2 and ZD3, for protecting the gate pole of IGBT from puncturing；The anode of ZD4 is even
It is connected on the power supply -9V of driving chip, for protecting the tube voltage drop test side overtension of driving chip and breakdown；Optocoupler
The input negative electrode of PC1 connects to the protection signal outfan of driving chip, for the IGBT pipe pressure monitoring driving chip
Fall abnormal signal delivers to circuit processed, and this utility model breaches the restriction to the power supply capacity upper limit for the IGBT device electric current, there is provided
A kind of multiple IGBT circuit reliably used in parallel, thus improve power supply capacity.
Brief description
By reading detailed description non-limiting example made with reference to the following drawings, of the present utility model other special
Levy, objects and advantages will become more apparent upon：
Fig. 1 is IGBT drive circuit schematic diagram used in parallel in a kind of large power supply of this utility model；
Specific embodiment
Technological means, creation characteristic, reached purpose and effect for making this utility model realize are easy to understand, below
In conjunction with specific embodiment, this utility model is expanded on further.
Refer to Fig. 1, this utility model provides a kind of technical scheme：IGBT drive used in parallel in a kind of large power supply
Galvanic electricity road, including the insulation blocking resistance of driving chip, pliotron and IGBT parallel drive, described driving chip defeated
Enter Dragon Boat Festival pole to link together with control circuit power supply through resistance R1, the signal output foot of described driving chip is through resistance R3 even
Connect the base stage with the pliotron of two composition push-pull configurations, the transmitting of the pliotron of described two composition push-pull configurations
The drive signal that pole is connected together as IGBT is connected to the gate pole of each IGBT respectively through resistance R11, R21 and R31；Each IGBT
Gate pole be connected on resistance R12, R22 and R32, each IGBT transmitting interpolar be connected to Transient Suppression Diode ZD1, ZD2 with
And ZD3, the emitter stage of respective IGBT connects through resistance R13, R23 and R33 to the feeder ear of driving chip, the current collection of each IGBT
Pole connects the negative electrode of diode D1, D2 and D3 respectively, and the anode of diode D1, D2 and D3 links together and connects to drive
The tube voltage drop test side of dynamic chip, the tube voltage drop test side of driving chip is connected to the negative electrode of stabilivolt ZD4, and the anode of ZD4 is even
It is connected on the power supply -9V of driving chip, the input anode of optocoupler PC1 connects through resistance R2 to the power supply+15V of driving chip
On, the input negative electrode of optocoupler PC1 connects to the protection signal outfan of driving chip.
The power supply of driving chip is provided by+the 15V being isolated with control circuit and -9V respectively, diode D1, D2 and D3's
Negative electrode links together and connects and monitors IGBT tube voltage drop to the tube voltage drop test side of driving chip, and the input of optocoupler PC1 is cloudy
Pole connects delivers to system electricity to the protection signal outfan of driving chip by the IGBT tube voltage drop abnormal signal that driving chip monitors
Road.
Specific embodiment：When being used, staff checks to this utility model first, checks whether and deposits
In defect, if there is just cannot be carried out if defect employing, now need to notify maintainer to be keeped in repair, if do not deposited
Can be carried out using if problem, the signal output foot of driving chip is connected to two composition push-pull configurations through resistance R3
The base stage of pliotron, improves the current output capability of driving chip with this；The gate pole of each IGBT is connected to resistance R12, R22
And on R32, each IGBT transmitting interpolar is connected to Transient Suppression Diode ZD1, ZD2 and ZD3, for protecting the gate pole of IGBT
From puncturing；The anode of ZD4 connects to the power supply -9V of driving chip, for protecting the tube voltage drop test side electricity of driving chip
Press through high and breakdown；The input negative electrode of optocoupler PC1 connects to the protection signal outfan of driving chip, for driving core
The IGBT tube voltage drop abnormal signal that piece monitors delivers to circuit processed.
Of the present utility model ultimate principle and principal character and of the present utility model advantage have been shown and described above, for
It is clear that this utility model is not limited to the details of above-mentioned one exemplary embodiment for those skilled in the art, and without departing substantially from this
In the case of the spirit or essential attributes of utility model, this utility model can be realized in other specific forms.Therefore, no matter
From the point of view of which point, embodiment all should be regarded as exemplary, and be nonrestrictive, scope of the present utility model is by institute
Attached claim rather than described above limit, it is intended that will fall in the implication and scope of the equivalency of claim
All changes are included in this utility model.Any reference in claim should not be considered as limiting involved right
Require.
Moreover, it will be appreciated that although this specification is been described by according to embodiment, not each embodiment only wraps
Containing an independent technical scheme, only for clarity, those skilled in the art should for this narrating mode of description
Using description as an entirety, the technical scheme in each embodiment can also form those skilled in the art through appropriately combined
Understandable other embodiment.
Claims (4)
1. IGBT drive circuit used in parallel in a kind of large power supply, including driving chip, pliotron and IGBT
The insulation blocking resistance of parallel drive it is characterised in that：The input anode of described driving chip is through resistance R1 and control electricity
Road power supply links together, and the signal output foot of described driving chip connects the power with two composition push-pull configurations through resistance R3
The base stage of audion, the emitter stage of the pliotron of described two composition push-pull configurations is connected together as the driving of IGBT
Signal is connected to the gate pole of each IGBT respectively through resistance R11, R21 and R31；The gate pole of each IGBT be connected to resistance R12, R22 with
And on R32, each IGBT transmitting interpolar is connected to Transient Suppression Diode ZD1, ZD2 and ZD3, and the emitter stage of respective IGBT is through electricity
Resistance R13, R23 and R33 connect to the feeder ear of driving chip, the colelctor electrode of each IGBT connect respectively diode D1, D2 and
The negative electrode of D3, the anode of diode D1, D2 and D3 links together and connects to the tube voltage drop test side of driving chip, drives
The tube voltage drop test side of chip is connected to the negative electrode of stabilivolt ZD4, and the anode of ZD4 is connected on the power supply -9V of driving chip, light
The input anode of coupling PC1 connects to the power supply+15V of driving chip through resistance R2, and the input negative electrode of optocoupler PC1 connects
Protection signal outfan to driving chip.
2. in a kind of large power supply according to claim 1 IGBT drive circuit used in parallel it is characterised in that：Institute
The power supply stating driving chip is provided by+the 15V being isolated with control circuit and -9V respectively.
3. in a kind of large power supply according to claim 1 IGBT drive circuit used in parallel it is characterised in that：Two
The negative electrode of pole pipe D1, D2 and D3 links together and connects and monitors IGBT tube voltage drop to the tube voltage drop test side of driving chip.
4. in a kind of large power supply according to claim 1 IGBT drive circuit used in parallel it is characterised in that：Light
It is different that the input negative electrode of coupling PC1 connects to the protection signal outfan of driving chip the IGBT tube voltage drop monitoring driving chip
Regular signal delivers to circuit processed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620944333.4U CN205945507U (en) | 2016-08-26 | 2016-08-26 | Parallelly connected drive circuit who uses of IGBT in high -power power |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620944333.4U CN205945507U (en) | 2016-08-26 | 2016-08-26 | Parallelly connected drive circuit who uses of IGBT in high -power power |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205945507U true CN205945507U (en) | 2017-02-08 |
Family
ID=57953379
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620944333.4U Expired - Fee Related CN205945507U (en) | 2016-08-26 | 2016-08-26 | Parallelly connected drive circuit who uses of IGBT in high -power power |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205945507U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109873552A (en) * | 2019-04-25 | 2019-06-11 | 北京大学邯郸创新研究院 | A kind of main circuit of converter and frequency converter based on IGBT pipe |
-
2016
- 2016-08-26 CN CN201620944333.4U patent/CN205945507U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109873552A (en) * | 2019-04-25 | 2019-06-11 | 北京大学邯郸创新研究院 | A kind of main circuit of converter and frequency converter based on IGBT pipe |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20170208 Termination date: 20200826 |