CN203117691U - An intelligent power module and a high-voltage power switch - Google Patents
An intelligent power module and a high-voltage power switch Download PDFInfo
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- CN203117691U CN203117691U CN 201320029766 CN201320029766U CN203117691U CN 203117691 U CN203117691 U CN 203117691U CN 201320029766 CN201320029766 CN 201320029766 CN 201320029766 U CN201320029766 U CN 201320029766U CN 203117691 U CN203117691 U CN 203117691U
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- intelligent power
- power module
- triode
- module
- mcu
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Abstract
The utility model relates to electromechanical control field and especially relates to an intelligent power module and a high-voltage power switch. The high-voltage power switch is formed by two or more intelligent power modules connected in parallel. The intelligent power module comprises a control unit, a driving protection unit, and a power MOSFET tube which are connected successively. A diode is connected with the two ends of the power MOSFET tube in parallel. A MCU is disposed at the front end of the intelligent power module in order to receive a signal fed back from the driving protection unit. The control unit comprises two input ends V1 and V2 which are connected with the MCU. If any one of the intelligent power modules generates fault, the intelligent power module and other intelligent power modules connected with the same in parallel are turned off synchronously.
Description
Technical field
The utility model relates to the Electromechanical Control field, particularly a kind of Intelligent Power Module and high-voltage circuit breaker.
Background technology
When electromechanical automatic was controlled, when bearing power during greater than 5kW, high-voltage circuit breaker was generally selected IGBT module or many MOS parallel connections or Intelligent Power Module parallel connection for use.The IGBT module dissipation is excessive, needs to consider heat dissipation problem; Many MOS Parallel Control product overall volume are excessive, and the different capacity load needs varying number MOS parallel connection, the difficult standard product that forms; The mode of Intelligent Power Module parallel connection is more common; Drive Protecting Circuit monitoring load operational factor and duty that itself is built-in; have defencive functions such as overvoltage, overcurrent, overheated, short circuit; when Intelligent Power Module breaks down; when being overvoltage, overcurrent, overheated, short circuit; Drive Protecting Circuit can send fault-signal to MCU, and MCU sends cut-off signals to Intelligent Power Module again.
The Intelligent Power Module parallel connection has two kinds of schemes.First kind of scheme as shown in Figure 1, when microbus sends conducting/cut-off signals by bus interface, because the otherness of each MCU, the signal that causes MCU to send is asynchronous, Intelligent Power Module is conducting simultaneously not, and the shock resistance current capacity descends, and when serious circuit is caused damage.Another kind of improvement project as shown in Figure 2, be provided with control circuit in the Intelligent Power Module, when microbus sends conducting/cut-off signals by bus interface to any MCU, here suppose that MCU-2 receives conducting/cut-off signals, MCU-2 sends low level/high level signal to the Intelligent Power Module two of correspondence, this moment, Intelligent Power Module two was primary module, other modules are from module, Work_State2 receives low level/high level signal, U1_2 optocoupler conducting/shutoff, Control2 is low level/high level, because the existence of shunt control signal line, the control end Control1 of other Intelligent Power Module etc. all is consistent with Control2, has realized the synchronous conducting/shutoff of each Intelligent Power Module.
But when conducting state, when primary module is Intelligent Power Module two faults, the Drive Protecting Circuit of primary module can be fed back to MCU-2, MCU-2 sends high level signal, and Work_State2 receives high level signal, and the U1_2 optocoupler turn-offs, Control2 is high level, because the existence of shunt control signal line, Control1 etc. are high level, and all Intelligent Power Module are turn-offed; Normal when primary module, when breaking down from module such as Intelligent Power Module one; can feed back to MCU-1 from the Drive Protecting Circuit of module; MCU-1 sends high level signal; Work_State1 receives high level signal, and the U1_1 optocoupler turn-offs, but because U1_2 optocoupler conducting this moment; Control1 is by U-2 ground connection; be low level, break down from module conducting still, can not effectively turn-off.
The utility model content
Primary and foremost purpose of the present utility model is to provide a kind of Intelligent Power Module, can effectively turn-off when Intelligent Power Module breaks down.
For reaching above effect; the technical solution adopted in the utility model is: a kind of Intelligent Power Module; comprise the control module, driving protected location, the power MOSFET tube that connect successively; described power MOSFET tube two ends are parallel with diode; the Intelligent Power Module front end is provided with MCU and receives the signal that drives the protected location feedback, and described control module has two input end V1, V2 to link to each other with MCU.
Compared with prior art, there is following technique effect in the utility model:
When the Intelligent Power Module fault, itself and with it in parallel other Intelligent Power Module all can turn-off synchronously.
Another purpose of the present utility model provides a kind of high-voltage circuit breaker, and high-voltage circuit breaker can both effectively turn-off when any Intelligent Power Module breaks down.
For reaching above effect, the technical solution adopted in the utility model is: a kind of high-voltage circuit breaker by described Intelligent Power Module preparation, be formed in parallel by two or more Intelligent Power Module, the control module output terminal V3 of described Intelligent Power Module is connected by the shunt control signal line, and described Intelligent Power Module output terminal is connected by output signal line in parallel and connects the high-voltage power supply negative pole by overload.
Compared with prior art, there is following technique effect in the utility model:
When forming any one Intelligent Power Module fault of high-voltage circuit breaker, all Intelligent Power Module all can be turn-offed synchronously.
Description of drawings
Fig. 1 is the circuit theory diagrams of prior art scheme 1;
Fig. 2 is the circuit theory diagrams of prior art scheme 2;
Fig. 3 is the circuit theory diagrams of Intelligent Power Module;
Fig. 4 is the theory diagram of high-voltage circuit breaker;
Fig. 5 is the circuit theory diagrams of high-voltage circuit breaker.
Embodiment
Below in conjunction with Fig. 3 to Fig. 5, the utility model done being described in further detail:
Consult Fig. 3; a kind of Intelligent Power Module; comprise the control module 11, driving protected location 12, the power MOSFET tube that connect successively; described power MOSFET tube two ends are parallel with diode; Intelligent Power Module 10 front ends are provided with MCU and receive the signal that drives protected location 12 feedbacks, and described control module 11 has two input end V1, V2 to link to each other with MCU.Here two input end V1, V2 of the control module 11 that links to each other with MCU receive conducting/cut-off signals that MCU sends, the fault-signal of corresponding Intelligent Power Module respectively; the fault-signal of 11 pairs of conducting/cut-off signals that receive of control module, corresponding Intelligent Power Module receives and handles, and outputs signal to drive conducting/shutoff that protected location 12 is controlled corresponding Intelligent Power Module again.
Described control module 11 is made of the triode Q1 of positive-negative-positive and the triode Q2 of NPN type; described triode Q1; the base stage of Q2 is respectively by resistance R 1; behind the R2 as the input end V1 of control module 11; V2 links to each other with MCU; the emitter of triode Q1 connects+3.3V voltage; the collector of triode Q1 links to each other with the collector of triode Q2 by resistance R 3; the emitter of triode Q2; be connected with resistance R 4 between base stage; the emitter of triode Q2; inter-collector is connected with capacitor C 1, the grounded emitter of triode Q2; collector links to each other with driving protected location 12 as the output terminal V3 of control module 11.The collector of described triode Q2 links to each other with MCU as the output terminal V4 of control module 11.Control module 11 is provided with output terminal V4, is in order in time to report the failure message of Intelligent Power Module 10 to MCU.
Below the principle of work of Intelligent Power Module 10 is sketched, be it should be noted that in the background technology, when the Control signal that Drive Protecting Circuit receives was low level, power MOSFET tube was in conducting state.Among the present invention, when the driving protected location 12 of Intelligent Power Module 10 received the high level signal that the output terminal V3 of control module 11 sends, power MOSFET tube was in conducting state.
As V1, when V2 is low level signal, triode Q1 conducting, triode Q2 ends, and this moment, V3 was high level, the power MOSFET tube normally; When V1 is high level, when V2 was low level, triode Q1, Q2 all ended, and this moment, V3 was low level, the power MOSFET tube normal turn-off; When V2 is high level, no matter V1 is low level or high level, the equal conducting of triode Q2, V3 is low level, the power MOSFET tube fault is turn-offed.The output terminal V4 of control module 11 links to each other with V3, so its high-low level signal and V3 are consistent.
Consult Fig. 4, Intelligent Power Module use in parallel is the most common, a kind of high-voltage circuit breaker by described Intelligent Power Module preparation, be formed in parallel by two or more Intelligent Power Module, the control module output terminal V3 of described Intelligent Power Module is connected by shunt control signal line 13, and described Intelligent Power Module output terminal is connected by output signal line 14 in parallel and connects the high-voltage power supply negative pole by overload 40.The Intelligent Power Module front end is provided with MCU, and when Intelligent Power Module was in parallel, each Intelligent Power Module leading portion was equipped with MCU, and all MCU are connected with bus interface 30 again.
Consult Fig. 5, come high-voltage circuit breaker is elaborated, only be example with in parallel use of two Intelligent Power Module here.Microbus is by bus interface 30 subtend MCU20a, 20b sends conducting/cut-off signals, MCU20a, 20b is respectively to Intelligent Power Module 10a, control module input end V1 output low level/high level signal of 10b, suppose Intelligent Power Module 10a this moment, 10b does not all break down, be that control module 11 input end V2 end is low level, this moment Intelligent Power Module 10a, the control module 11 output terminal V3 of 10b are high level/low level, because the existence of shunt control signal line 13, when making the control module 11 output terminal V3 output high level of any one Intelligent Power Module/low level, all Intelligent Power Module 10a, the equal conducting of 10b/shutoff has namely realized the conducting/shutoff of high-voltage circuit breaker.
When any one Intelligent Power Module breaks down, such as being that Intelligent Power Module 10b breaks down, this moment, MCU20b will send fault-signal to Intelligent Power Module 10b, the control module 11 input end V2 of Intelligent Power Module 10b are high level, control module 11 output terminal V3 also become low level accordingly, because the existence of shunt control signal line 13, other Intelligent Power Module control module 11 output terminal V3 are low level, turn-off all Intelligent Power Module synchronously.Here there is not primary module and from the difference of module, any one Intelligent Power Module breaks down, and all can turn-off all Intelligent Power Module synchronously, thereby has realized effective shutoff of high-voltage circuit breaker.
Claims (4)
1. Intelligent Power Module; it is characterized in that: comprise the control module (11), driving protected location (12), the power MOSFET tube that connect successively; described power MOSFET tube two ends are parallel with diode; Intelligent Power Module (10) front end is provided with MCU and receives the signal that drives protected location (12) feedback, and described control module (11) has two input end V1, V2 to link to each other with MCU.
2. Intelligent Power Module as claimed in claim 1; it is characterized in that: described control module (11) is made of the triode Q1 of positive-negative-positive and the triode Q2 of NPN type; described triode Q1; the base stage of Q2 is respectively by resistance R 1; behind the R2 as the input end V1 of control module (11); V2 links to each other with MCU; the emitter of triode Q1 connects+3.3V voltage; the collector of triode Q1 links to each other with the collector of triode Q2 by resistance R 3; the emitter of triode Q2; be connected with resistance R 4 between base stage; the emitter of triode Q2; inter-collector is connected with capacitor C 1, the grounded emitter of triode Q2; collector links to each other with driving protected location (12) as the output terminal V3 of control module (11).
3. Intelligent Power Module as claimed in claim 2, it is characterized in that: the collector of described triode Q2 links to each other with MCU as the output terminal V4 of control module (11).
4. high-voltage circuit breaker by the preparation of the described Intelligent Power Module of claim 1, it is characterized in that: be formed in parallel by two or more Intelligent Power Module, the control module output terminal V3 of described Intelligent Power Module is connected by shunt control signal line (13), and described Intelligent Power Module output terminal is connected by output signal line in parallel (14) and connects the high-voltage power supply negative pole by overload (40).
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CN 201320029766 CN203117691U (en) | 2013-01-21 | 2013-01-21 | An intelligent power module and a high-voltage power switch |
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CN 201320029766 CN203117691U (en) | 2013-01-21 | 2013-01-21 | An intelligent power module and a high-voltage power switch |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107395136A (en) * | 2017-08-31 | 2017-11-24 | 成都四威功率电子科技有限公司 | A kind of protection circuit applied to gallium nitride and GaAs Power amplifier |
CN108390669A (en) * | 2016-12-12 | 2018-08-10 | 中国航空工业集团公司西安航空计算技术研究所 | With PHM functions can parallel configuration intelligent high side power switch |
CN108616267A (en) * | 2016-12-12 | 2018-10-02 | 中国航空工业集团公司西安航空计算技术研究所 | With PHM functions can parallel configuration the low side power switch of intelligence |
CN110412341A (en) * | 2019-08-09 | 2019-11-05 | 珠海格力电器股份有限公司 | IPM over-current detection circuit |
US11387643B2 (en) | 2019-03-27 | 2022-07-12 | Sungrow Power Supply Co., Ltd. | Method, device and system for protecting parallel-connected topology units |
-
2013
- 2013-01-21 CN CN 201320029766 patent/CN203117691U/en not_active Expired - Lifetime
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108390669A (en) * | 2016-12-12 | 2018-08-10 | 中国航空工业集团公司西安航空计算技术研究所 | With PHM functions can parallel configuration intelligent high side power switch |
CN108616267A (en) * | 2016-12-12 | 2018-10-02 | 中国航空工业集团公司西安航空计算技术研究所 | With PHM functions can parallel configuration the low side power switch of intelligence |
CN107395136A (en) * | 2017-08-31 | 2017-11-24 | 成都四威功率电子科技有限公司 | A kind of protection circuit applied to gallium nitride and GaAs Power amplifier |
US11387643B2 (en) | 2019-03-27 | 2022-07-12 | Sungrow Power Supply Co., Ltd. | Method, device and system for protecting parallel-connected topology units |
CN110412341A (en) * | 2019-08-09 | 2019-11-05 | 珠海格力电器股份有限公司 | IPM over-current detection circuit |
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Address after: 100072 Beijing city Fengtai District Changxindian unit 63963 No. 53 Patentee after: 63963 TROOPS PLA Patentee after: HEFEI TONGZHI ELECTRICAL CONTROL TECHNOLOGY Co.,Ltd. Address before: 100072 Beijing city Fengtai District Changxindian unit 63963 No. 53 Patentee before: 63963 TROOPS PLA Patentee before: HEFEI TONGZHI ELECTRICAL CONTROL TECHNOLOGY Co.,Ltd. |
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CX01 | Expiry of patent term |
Granted publication date: 20130807 |
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CX01 | Expiry of patent term |