CN202585524U - Light emitting diode device - Google Patents
Light emitting diode device Download PDFInfo
- Publication number
- CN202585524U CN202585524U CN 201220104210 CN201220104210U CN202585524U CN 202585524 U CN202585524 U CN 202585524U CN 201220104210 CN201220104210 CN 201220104210 CN 201220104210 U CN201220104210 U CN 201220104210U CN 202585524 U CN202585524 U CN 202585524U
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- China
- Prior art keywords
- light
- emitting diode
- protecting cover
- substrate
- diode assembly
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- Expired - Fee Related
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- 239000000463 material Substances 0.000 claims abstract description 28
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- 230000004907 flux Effects 0.000 claims description 25
- 230000009466 transformation Effects 0.000 claims description 24
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- 230000003287 optical effect Effects 0.000 description 5
- 239000004411 aluminium Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000002223 garnet Substances 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000002096 quantum dot Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- QVMHUALAQYRRBM-UHFFFAOYSA-N [P].[P] Chemical compound [P].[P] QVMHUALAQYRRBM-UHFFFAOYSA-N 0.000 description 1
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- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
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- 201000009310 astigmatism Diseases 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
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- 238000005265 energy consumption Methods 0.000 description 1
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- 229920005668 polycarbonate resin Polymers 0.000 description 1
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- 229910052710 silicon Inorganic materials 0.000 description 1
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- 229910019655 synthetic inorganic crystalline material Inorganic materials 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
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- 229910052727 yttrium Inorganic materials 0.000 description 1
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Images
Abstract
The utility model relates to a light emitting diode device of adjustable light type, its mode that can high efficiency, low cost, the energy saving designs required grading curve. The light emitting diode device includes: a substrate; the light-emitting diode chip is positioned on the substrate; the protecting cover is separated from the light-emitting diode chip by a certain distance and is connected with the substrate; and a wavelength conversion material located on the surface of the protecting cover or distributed in the protecting cover; wherein, the side profile of the outer surface of the protecting cover comprises a straight line and a curve. The embodiment of the utility model provides a by changing protecting cover surface geometry to change the luminous light type of emitting diode device.
Description
Technical field
The utility model relates to a kind of light-emitting diode assembly of adjustable lay the grain type.
Background technology
After the light-emitting diode chip for backlight unit manufacturing is accomplished, form light-emitting diode assembly through canned program.Good light-emitting diode assembly has high heat radiation and light extraction efficiency, has advantages such as low energy consumption and life-span length simultaneously.
The light that light-emitting diode assembly sends has specific distribution curve flux usually.If this distribution curve flux is not required for final products, must carry out the secondary optics design by assemblies such as lens, reflector, diffuser plates again, to reach the luminous intensity distribution demand of rules or illuminating product.
Because of using extra assembly, the secondary optics design increases cost.Meeting such as reflecting plate, lens, diffuser plate absorbing light causes luminous efficiency to reduce, and wastes energy.In addition, the distribution curve flux of general led lamp is fixing; Yet different environments for use possibly have different distribution curve flux demands.
In view of above-mentioned, having needs to propose a kind of light-emitting diode assembly, with the distribution curve flux of the mode design of high efficiency, low cost, province's energy.
The utility model content
In order to address the above problem, the utility model one embodiment provide a kind of light-emitting diode assembly, and it can high efficiency, the distribution curve flux of the mode design of low cost, province's energy, and this light-emitting diode assembly comprises a substrate; Be positioned at the light-emitting diode chip for backlight unit on the substrate; One protecting cover, with the light-emitting diode chip for backlight unit distance of being separated by, protecting cover also is connected with substrate; And a material for transformation of wave length, be positioned on the protecting cover inner surface, or material for transformation of wave length is distributed among the protecting cover; The side profile of wherein above-mentioned protecting cover outer surface comprises a straight line and a curve.
Wherein, said material for transformation of wave length is positioned on the inner surface of said protecting cover.
Wherein, said straight line be positioned at said curve around, and the height of said curve is greater than the height of said straight line.
Wherein, said light-emitting diode chip for backlight unit has an optically focused light type through the light that said protecting cover sends, and the distribution curve flux of this optically focused light type is spent to the light intensity distributions between 110 degree 70 and accounted for more than 50% of total luminous intensity.
Wherein, said straight line and said substrate have an angle.
Wherein, said curve be positioned at said straight line around, and the height of said straight line is greater than the height of said curve.
Wherein, Said light-emitting diode chip for backlight unit has a batswing tab light type through the light that said protecting cover sends; The distribution curve flux of this batswing tab light type has two maximums, lay respectively at 35 and spend between 55 degree and between 125 degree to 145 degree, and light intensity value roughly is symmetrical distribution.
Wherein, said protecting cover has at least one socle, and said substrate has at least one hole of said relatively socle, and said socle and described hole are fixed through fit system.
Wherein, said protecting cover comprises:
One outer cap;
Cap in one is connected with said substrate, and the outer surface of wherein said interior cap has similar profile with the inner surface of said outer cap, and the side profile of the outer surface of said outer cap has said straight line and said curve; And
Said material for transformation of wave length outside said cap and said between the cap, said material for transformation of wave length is used to change the emission wavelength of said light-emitting diode chip for backlight unit.
Wherein, the one side of said material for transformation of wave length directly contacts said outer cap, and the another side of said material for transformation of wave length directly contacts said interior cap, to form a sandwich structure.
Description of drawings
Figure 1A to Fig. 1 D shows the light-emitting diode assembly of the utility model first embodiment, and wherein Figure 1A is a stereogram, and Figure 1B is an end view, and Fig. 1 C is a profile, and Fig. 1 D is an end view.
Fig. 1 E is the luminous intensity distribution plot of Figure 1A to 1C embodiment.
Fig. 2 A to Fig. 2 C shows the light-emitting diode assembly of the utility model second embodiment, and wherein Fig. 2 A is a stereogram, and Fig. 2 B is an end view, and Fig. 2 C is a profile.
Fig. 2 D is the luminous intensity distribution plot of Fig. 2 A to 2C embodiment.
Fig. 3 A to Fig. 3 C shows the light-emitting diode assembly of the utility model the 3rd embodiment, and wherein Fig. 3 A is a stereogram, and Fig. 3 B is an end view, and Fig. 3 C is a profile.
Fig. 3 D is the luminous intensity distribution plot of Fig. 3 A to 3C embodiment.
Fig. 4 A to Fig. 4 C shows the light-emitting diode assembly of the utility model the 4th embodiment, and wherein Fig. 4 A is a stereogram, and Fig. 4 B is an end view, and Fig. 4 C is a profile.
Fig. 4 D is the luminous intensity distribution plot of Fig. 4 A to 4C embodiment.
Fig. 5 A to Fig. 5 C shows the light-emitting diode assembly of the utility model the 5th embodiment, and wherein Fig. 5 A is a stereogram, and Fig. 5 B is an end view, and Fig. 5 C is a profile.
Fig. 5 D is the luminous intensity distribution plot of Fig. 5 A to 5C embodiment.
Fig. 6 A to Fig. 6 C shows the light-emitting diode assembly of the utility model the 6th embodiment, and wherein Fig. 6 A is a stereogram, and Fig. 6 B is an end view, and Fig. 6 C is a profile.
Fig. 6 D is the luminous intensity distribution plot of Fig. 6 A to 6C embodiment.
Fig. 7 shows a kind of light-emitting diode assembly according to the utility model preferred embodiment.
Fig. 8 shows a kind of light-emitting diode assembly according to another embodiment of the utility model.
The primary clustering symbol description
10 substrates
The 10a hole
20 protecting covers
The outer cap of 20a
Cap in the 20b
The 20c socle
22 curves
24 straight lines
The side profile of 26 inner surfaces
30 light-emitting diode chip for backlight unit
40 material for transformation of wave length
50 air/transparent polymer material
Embodiment
Each embodiment of this case below will be detailed, and cooperate graphic as illustration.Except these are described in detail; The utility model can also be implemented among other the embodiment widely; The substituting easily of any said embodiment, revise, equivalence changes and is included in the scope of the utility model, and be as the criterion with claim institute restricted portion.In the description of specification, in order to make the reader the utility model there is more complete understanding, many specific detail are provided; Yet the utility model possibly still can be implemented at clipped or all under the prerequisite of these specific detail.In addition, well-known step or assembly are not described in the details, with the restriction of avoiding causing the utility model unnecessary.Identical or similar assembly will be represented with identical or simileys in graphic.What pay special attention to is that the graphic usefulness that is merely signal is not actual size or quantity of proxy component, unless otherwise specified.Direction as herein described is with graphic benchmark as a reference.
For reducing cost, raising the efficiency, the utility model reaches required illuminating effect or light type by primary optical design.
Because the utility model focuses on the optical design of light-emitting diode assembly, the details of its circuit, heat radiation is not restriction then, maybe can use structure known in the art, so following examples are omitted the description of this respect.
The lighting angle of general light-emitting diode can reach more than 120 degree usually.This kind light type can be described as " astigmatic type ", it is characterized in that illumination range is big, and luminous intensity is evenly to distribute in lighting angle, and distribution curve flux is near the general lighting lamp.The LED light lamp of astigmatism type is suitable for indoor and needs the soft uniform occasion of light.
But some the time or the place, for example desire is stressed the localized lighting of characteristic, then needs the light type of high directivity or special-effect.For in response to this type of demand, the utility model embodiment provide light-emitting diode assembly, by changing the protecting cover morphology, to change the luminous smooth type of light-emitting diode assembly, for example: optically focused or batswing tab light type.
Figure 1A to Fig. 1 D shows the optically focused light type light-emitting diode assembly of the utility model first embodiment.The light-emitting diode assembly of this instance mainly comprises substrate 10, protecting cover 20, light-emitting diode chip for backlight unit 30.Light-emitting diode chip for backlight unit 30 can be placed on the substrate 10 indirectly, and shown in Figure 1B, light-emitting diode chip for backlight unit 30 can be placed on lead frame (lead frame) and/or the secondary substrate (submount), is positioned on the substrate 10 again; Or can directly be placed in (shown in Fig. 1 D) on the substrate 10, protecting cover 20 is separated by one apart from (spaced apart from the LED chip) with light-emitting diode chip for backlight unit 30.In part embodiment, between protecting cover 20 and light-emitting diode chip for backlight unit 30, can fill air or transparent polymer material.Protecting cover also is connected with substrate, and its mode can comprise but be not limited to: cooperate (fit), stick together, welding, spiral shell are solid etc.Though the quantity of light-emitting diode chip for backlight unit 30 is odd number here, also can be plural number.
Light-emitting diode assembly also comprises a material for transformation of wave length, is used for the emission wavelength of conversion light emitting diode chip 30.Material for transformation of wave length can be positioned on the outer surface of protecting cover 20 or on the inner surface.In part embodiment, material for transformation of wave length is positioned on the inner surface of protecting cover.In part embodiment, material for transformation of wave length is distributed among the protecting cover.
In order to obtain optically focused light type, the side profile of the outer surface of protecting cover 20 (profile) has a curve 22 and a straight line 24.In part embodiment, curve 22 has the radius of curvature that light-emitting diode chip for backlight unit 30 or light source center point are pointed in the center.
In part embodiment, the normal direction of definition light-emitting diode chip for backlight unit is 90 degree, straight line 24 be positioned at curve 22 around, curve 22 is contained 45 at least and is spent the light that is sent by light-emitting diode chip for backlight unit to 135 degree.In part embodiment, the outer surface of protecting cover 20 is one of the forming, have simultaneously curve 22 and straight line 24 both.
Please refer to Fig. 1 C, protecting cover 20 also has an inner surface.In part embodiment, the side profile 26 of inner surface is a curve, and has the radius of curvature that light-emitting diode chip for backlight unit 30 or light source center point are pointed in the center; At other embodiment, the side profile 26 of inner surface is circular, trapezoidal, square, or one of them of rectangle etc.
In this manual, " inner surface " is meant the surface of object chip 30 or light source center point, and " outer surface " is meant the apparent surface of " inner surface ".
Fig. 1 D is the luminous intensity distribution plot of Figure 1A to 1C embodiment, that is distribution curve flux.This distribution curve flux definition light-emitting diode chip for backlight unit normal direction is 90 degree.Normal direction can be parallel with the normal direction of substrate.The distribution curve flux of this light-emitting diode assembly presents optically focused light type, and the luminous intensity maximum is that 0.4799w/sr approximately drops on 90 degree.In this manual, " optically focused light type " be meant distribution curve flux 70 spend to 110 the degree between light intensity distributions, account for more than 50% of total luminous intensity, be preferably more than 60%.
Fig. 2 A to Fig. 2 C shows the another kind of optically focused light type light-emitting diode assembly of the utility model second embodiment, and wherein Fig. 2 A is a stereogram, and Fig. 2 B is an end view, and Fig. 2 C is a profile.Present embodiment is different with first embodiment to be in relative size (dimension) and the relative altitude of curve 22 with straight line 24, and to obtain different directive property intensity, all the other details can be continued to use first embodiment." highly " is defined as the distance of the peak and the substrate 10 of curve 22 or straight line 24 here.
Fig. 2 D shows the distribution curve flux of second embodiment, and related definition is with Fig. 1 D.Like figure, the distribution curve flux of this light-emitting diode assembly presents optically focused light type, and the luminous intensity maximum is that 0.99509w/sr approximately drops on 90 degree.Compared to first embodiment, this embodiment has higher directive property.
Fig. 3 A to Fig. 3 C shows another optically focused light type light-emitting diode assembly of the utility model the 3rd embodiment, and wherein Fig. 3 A is a stereogram, and Fig. 3 B is an end view, and Fig. 3 C is a profile.Not existing together except the relative size and relative altitude of curve 22 and straight line 24 of this embodiment and previous embodiment also has the straight line 24 and the direction of substrate 10 can have an angle, is used to improve the total reflection phenomenon of forward light.All the other details of present embodiment can be continued to use first or second embodiment.
Fig. 3 D shows the distribution curve flux of the 3rd embodiment, and related definition is with Fig. 1 D.Like figure, the distribution curve flux of this light-emitting diode assembly presents optically focused light type, and the luminous intensity maximum is that 0.96773w/sr approximately drops on 90 degree.Compared to first embodiment, this embodiment has higher directive property.
Fig. 4 A to Fig. 4 C shows the batswing tab light type light-emitting diode assembly of the utility model the 4th embodiment, and wherein Fig. 4 A is a stereogram, and Fig. 4 B is an end view, and Fig. 4 C is a profile.This embodiment and previous embodiment different be in: curve 22 be positioned at straight line 24 around, straight line 24 is contained 60 at least and is spent the light that is sent by light-emitting diode chip for backlight unit to 120 degree; That is the height of straight line 24 is greater than the maximum height of curve 22.All the other details of present embodiment can be continued to use aforementioned each embodiment.
Fig. 4 D shows the distribution curve flux of the 4th embodiment, and related definition is with Fig. 1 D.Like figure, the distribution curve flux of this light-emitting diode assembly presents the bat aerofoil profile, and the luminous intensity maximum is that 0.25254w/sr approximately drops on 45 degree and 135 degree.At this specification, " bat aerofoil profile " is meant that its distribution curve flux has two maximums, lay respectively between 35 degree to 55 degree, and between 125 degree to 145 degree, and luminous intensity roughly is symmetrical distribution.In addition, the luminous intensity of normal line vector (90 degree) and the ratio (percentage) of maximum optical intensity value preferably are about between 20% to 50% between about 10% to about 60%.
Fig. 5 A to Fig. 5 C shows the another kind of batswing tab light type light-emitting diode assembly of the utility model the 5th embodiment, and wherein Fig. 5 A is a stereogram, and Fig. 5 B is an end view, and Fig. 5 C is a profile.This embodiment is in the relative size of curve 22 with straight line 24 with the different of the 4th embodiment.All the other details of present embodiment can be continued to use the 4th embodiment.
Fig. 5 D shows the distribution curve flux of the 5th embodiment, and related definition is with Fig. 1 D.Like figure, the distribution curve flux of this light-emitting diode assembly presents the bat aerofoil profile, and the luminous intensity maximum is that 0.24962w/sr approximately drops on 45 degree and 135 degree.
Fig. 6 A to Fig. 6 C shows another batswing tab light type light-emitting diode assembly of the utility model the 6th embodiment, and wherein Fig. 6 A is a stereogram, and Fig. 6 B is an end view, and Fig. 6 C is a profile.This embodiment is in relative size and the relative altitude of curve 22 with straight line 24 with the different of the 5th embodiment.All the other details of present embodiment can be continued to use the 4th embodiment or the 5th embodiment.
Fig. 6 D shows the distribution curve flux of the 6th embodiment, and related definition is with Fig. 1 D.Like figure, the distribution curve flux of this light-emitting diode assembly presents the bat aerofoil profile, and the luminous intensity maximum is that 0.26128w/sr approximately drops on 45 degree and 135 degree.
The light-focusing type light-emitting diode assembly that the utility model provided, its luminous intensity is high, angle is little; The light beam that can similar flashlight sends of the light type that penetrates: hot spot brightness is high, and the peripheral brightness of hot spot is low.The light-focusing type light-emitting diode assembly is applicable to making devices such as projecting lamp, Down lamp, desk lamp, flashlight.In addition, bat aerofoil profile light-emitting diode assembly is applicable to outdoor illumination applications such as street lamp, Tunnel Lamp, garden lamp.
The utility model only sees through primary optical design, and the external form by changing protecting cover 20 can reach required illuminating effect.All the other details of protecting cover 20 do not limit.In part embodiment, Fig. 7 shows a kind of light-emitting diode assembly.Like figure, protecting cover 20 comprises outer cap 20a (outer cap), interior cap 20b, and outside a material for transformation of wave length 40 between cap 20a and the interior cap 20b, material for transformation of wave length 40 is used for the emission wavelength of conversion light emitting diode chip 30.In part embodiment, the one side of material for transformation of wave length 40 directly contacts outer cap 20a, and the another side of material for transformation of wave length 40 directly contacts interior cap 20b, uses the formation sandwich structure.In part embodiment, protecting cover 20 is connected in substrate 10 via interior cap 20b.Ways of connecting can comprise but be not limited to: cooperate (fit), stick together, welding, spiral shell are solid etc.At present embodiment, interior cap 20b has four socle 20c, and correspondence is fixed among the hole 10a of substrate.The height of socle 20c can be equal to, or greater than the height of hole 10a.In addition, between interior cap 20b and light-emitting diode chip for backlight unit 30, can fill air 50 or transparent polymer material 50.
At present embodiment, the profile of protecting cover 20, that is the profile of outer cap 20a, identical with first embodiment, but it also can adopt the profile of being demonstrated like second to the 6th embodiment.
In addition, outer cap 20a, interior cap 20b are that transparent material is processed, and material can comprise but be not limited to: resin, epoxy resin, silica gel, high molecular polymer, transparent polyester optical material, polycarbonate resin, acryl, glass etc.
In addition, material for transformation of wave length 40 can have phosphor (phosphor) or quantum dot (quantum dot) etc. with Wavelength-converting.Phosphor (phosphor) can be yttrium aluminium garnet fluorescent powder (yttrium aluminum garnet, YAG), terbium aluminium garnet fluorescent material (terbium aluminum garnet, TAG) or the like.
Fig. 8 shows the light-emitting diode assembly according to another embodiment of the utility model.Present embodiment and Fig. 7 embodiment different be in: the side profile 26 of the inner surface of interior cap 20b, that is the side profile 26 of the inner surface of protecting cover 20 are rectangle.But in other embodiments, the side profile 26 of inner surface can be for circular, trapezoidal or square.In addition, in the present embodiment, the profile of protecting cover 20, that is the profile of outer cap 20a, identical with the 4th embodiment, but it also can adopt the profile of demonstrating like other embodiment.
At another embodiment, the outer surface of the inner surface of outer cap 20a and interior cap 20b has roughly the same profile, makes material for transformation of wave length 40 have homogeneous thickness.
The utility model can obtain required illumination light type by changing the protecting cover morphology, saves the secondary optics design, comprises the cost of reflector, diffuser plate etc.Simultaneously, because of the design of omission secondary optics, the light that light-emitting diode chip for backlight unit sent, its path shortens, absorbed power reduces, and energy utilization rate is improved.
The preferred embodiment that the above is merely the utility model is not in order to limit the utility model; All other do not break away from the equivalence of being accomplished under the spirit that utility model discloses and changes or modify, and all should be included in the claim institute restricted portion.
Claims (9)
1. light-emitting diode assembly comprises:
One substrate;
One light-emitting diode chip for backlight unit is positioned on the said substrate;
One protecting cover, with the said light-emitting diode chip for backlight unit distance of being separated by, said protecting cover is connected with said substrate; And
One material for transformation of wave length is positioned on the said protecting cover surface, or is distributed among the said protecting cover;
It is characterized in that the side profile of said protecting cover outer surface comprises a straight line and a curve.
2. light-emitting diode assembly as claimed in claim 1 is characterized in that said material for transformation of wave length is positioned on the inner surface of said protecting cover.
3. light-emitting diode assembly as claimed in claim 1 is characterized in that, said straight line be positioned at said curve around, and the height of said curve is greater than the height of said straight line.
4. light-emitting diode assembly as claimed in claim 3; It is characterized in that; Said light-emitting diode chip for backlight unit has an optically focused light type through the light that said protecting cover sends, and the distribution curve flux of this optically focused light type is spent to the light intensity distributions between 110 degree 70 and accounted for more than 50% of total luminous intensity.
5. light-emitting diode assembly as claimed in claim 3 is characterized in that, said straight line and said substrate have an angle.
6. light-emitting diode assembly as claimed in claim 1 is characterized in that, said curve be positioned at said straight line around, and the height of said straight line is greater than the height of said curve.
7. light-emitting diode assembly as claimed in claim 1 is characterized in that said protecting cover has at least one socle, and said substrate has at least one hole of said relatively socle, and said socle and described hole are fixed through fit system.
8. light-emitting diode assembly as claimed in claim 1 is characterized in that, said protecting cover comprises:
One outer cap;
Cap in one is connected with said substrate, and the outer surface of wherein said interior cap has similar profile with the inner surface of said outer cap, and the side profile of the outer surface of said outer cap has said straight line and said curve; And
Said material for transformation of wave length outside said cap and said between the cap, said material for transformation of wave length is used to change the emission wavelength of said light-emitting diode chip for backlight unit.
9. light-emitting diode assembly as claimed in claim 8 is characterized in that, the one side of said material for transformation of wave length directly contacts said outer cap, and the another side of said material for transformation of wave length directly contacts said interior cap, to form a sandwich structure.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW100149353A TW201326682A (en) | 2011-12-28 | 2011-12-28 | Light-emitting diode device |
| TW100149353 | 2011-12-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202585524U true CN202585524U (en) | 2012-12-05 |
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Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012100732157A Pending CN103187509A (en) | 2011-12-28 | 2012-03-19 | Light emitting diode device |
| CN 201220104210 Expired - Fee Related CN202585524U (en) | 2011-12-28 | 2012-03-19 | Light emitting diode device |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012100732157A Pending CN103187509A (en) | 2011-12-28 | 2012-03-19 | Light emitting diode device |
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| Country | Link |
|---|---|
| CN (2) | CN103187509A (en) |
| TW (1) | TW201326682A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103187509A (en) * | 2011-12-28 | 2013-07-03 | 华夏光股份有限公司 | Light emitting diode device |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103441123A (en) * | 2013-07-26 | 2013-12-11 | 京东方科技集团股份有限公司 | LED and display device |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201748334U (en) * | 2009-06-05 | 2011-02-16 | 珠海市绿色照明科技有限公司 | Lens mounted on LED lamp |
| CN201689910U (en) * | 2010-03-21 | 2010-12-29 | 秦彪 | LED lamp core for illumination and three types of LED chips |
| CN102214778A (en) * | 2011-05-18 | 2011-10-12 | 五邑大学 | Packaging structure of LED (light-emitting diode) chip and manufacturing method thereof |
| TW201326682A (en) * | 2011-12-28 | 2013-07-01 | Phostek Inc | Light-emitting diode device |
-
2011
- 2011-12-28 TW TW100149353A patent/TW201326682A/en unknown
-
2012
- 2012-03-19 CN CN2012100732157A patent/CN103187509A/en active Pending
- 2012-03-19 CN CN 201220104210 patent/CN202585524U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103187509A (en) * | 2011-12-28 | 2013-07-03 | 华夏光股份有限公司 | Light emitting diode device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103187509A (en) | 2013-07-03 |
| TW201326682A (en) | 2013-07-01 |
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