CN202585502U - Bottom electrode bottom-removing corrosion system for space triple-junction gallium arsenide solar cell - Google Patents
Bottom electrode bottom-removing corrosion system for space triple-junction gallium arsenide solar cell Download PDFInfo
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- CN202585502U CN202585502U CN201220140938XU CN201220140938U CN202585502U CN 202585502 U CN202585502 U CN 202585502U CN 201220140938X U CN201220140938X U CN 201220140938XU CN 201220140938 U CN201220140938 U CN 201220140938U CN 202585502 U CN202585502 U CN 202585502U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
The utility model relates to a bottom electrode bottom-removing corrosion system for a space triple-junction gallium arsenide solar cell. The corrosion system comprises a rotating resist coating machine, a drying machine, a corrosion apparatus, a solvent cleaning apparatus, an alkaline box, a cleaning box and a drier. The corrosion system is characterized in that the rotating resist coating machine, the drying machine, the corrosion apparatus, the solvent cleaning device, the alkaline box, the cleaning box and the drier are connected sequentially. The corrosion apparatus comprises a main corrosion box and a washing box thereof, a corrosion box and a washing box thereof. The solvent cleaning apparatus comprises a no.1 acetone cleaning box and a no.2 acetone cleaning box which are arranged continuously in two steps, and a no.1absolute ethyl alcohol cleaning box and a no.2 absolute ethyl alcohol cleaning box which are arranged continuously. The alkaline box is a sodium hydroxide cleaning box. The cleaning box is a deionized water cleaning box. According to the corrosion system, through the two-step bottom-removing corrosion cleaning and the alkaline cleaning, the yield of cells in mass production, bottom electrode firmness of cells and performance of cells are improved, and the wide application of triple-junction solar cells in the field of new environment-friendly energy resources is promoted.
Description
Technical field
The utility model belongs to solar cell manufacturing technology field, and especially a kind of bottom electrode of space three-junction gallium arsenide solar battery removes end etching system.
Background technology
Solar cell is a kind of semiconductor device that solar energy is directly changed into electric energy based on photovoltaic effect.Space three-junction gallium arsenide solar battery is on the basis of GaAs/germanium unijunction solar cell, to have increased a top battery (GaInP
2), in the germanium substrate, prepare the p/n knot simultaneously.It adopts metal organic chemical vapor deposition (MOCVD) technology on the Ge substrate, to carry out the growth of battery structure, and adopts other corresponding semiconductor process techniques to prepare ohmic contact and optics antireflective coating.Extension is first procedure of preparation three-junction solar battery, is on the Ge substrate, to grow the corresponding battery structure.In epitaxial process; Have a spot of slit between the lower surface of Ge substrate and the extension pallet; Thereby can grow a spot of epitaxial loayer at the lower surface of Ge substrate, because growth temperature is higher, a spot of phosphorus also can be spread in the epitaxial wafer back side simultaneously; Thereby form reverse Ge knot in the part, offset the part output voltage of battery.Should tie for eliminating, remove unnecessary epitaxial growth thing simultaneously, need before the vapor deposition bottom electrode, go end corrosion.It is the important ring in the three junction battery device technologies of preparing that the three-junction solar battery bottom electrode removes end corrosion technology, and the thickness of bottom electrode corrosion and the surface topography after the corrosion directly affect the firmness of battery bottom electrode and the output voltage of battery.Along with three-junction solar battery being widely used of emerging, eco-friendly power source field, the research for preparing in the process the etching characteristic of associated materials at device has also just had more and more important and practical meanings.
Existing deficiency of going end corrosion device to exist is: ⑴ is after long-time corrosion, and the battery surface pattern is uncontrollable, has directly had influence on the firmness of next step vapor deposition of bottom electrode; ⑵ corrosion rate is unfixing, can't guarantee that epitaxial wafer back of the body surface no longer includes reverse Ge knot, thereby cause the output voltage of battery to reduce, and the conversion efficiency of battery descends.
The utility model content
The purpose of the utility model is to overcome the deficiency of prior art, provides the bottom electrode of a kind of design science, space three-junction gallium arsenide solar battery simple in structure to remove end etching system.
The utility model solves its technical problem and realizes through following technical scheme:
A kind of bottom electrode of space three-junction gallium arsenide solar battery removes end etching system; Comprise rotation resist coating machine, drying machine, corrosion device, solvent clean device, alkaline case, cleaning box, drier; It is characterized in that: rotation resist coating machine, drying machine, corrosion device, solvent clean device, alkaline case, cleaning box and drier link to each other successively; Said corrosion device comprises main corrosion case and washer box, corrosion case and washer box thereof; The solvent clean device comprises the acetone case of continuous secondary and continuous absolute ethyl alcohol cleaning case, and alkaline case is the NaOH cleaning case, and cleaning box is the deionized water cleaning box.
And said drier adopts nitrogen to dry up mode.
Advantage of the utility model and beneficial effect are:
1, native system passes through suitable etching condition in main corrosion case; Effectively control corrosive liquid corrosion rate is guaranteed that epitaxial wafer back of the body surface no longer includes reverse Ge knot, thereby is guaranteed the output voltage of battery; Improve the conversion efficiency of battery, guarantee the firmness of the bottom electrode of vapor deposition.
2, native system goes end corrosion to clean and the alkalescence cleaning through two-stage, has improved the rate of finished products of producing battery in batches, has improved the bottom electrode firmness of battery, has improved the performance of battery, has promoted three-junction solar battery in emerging eco-friendly power source extensive applications.
Description of drawings
Fig. 1 is that the structure of the utility model connects sketch map.
Embodiment
Below in conjunction with accompanying drawing and through specific embodiment the utility model is done further to detail, following examples are descriptive, are not determinate, can not limit the protection range of the utility model with this.
A kind of bottom electrode of space three-junction gallium arsenide solar battery removes end etching system; Referring to Fig. 1; Comprise rotation resist coating machine, drying machine, corrosion device, solvent clean device, alkaline case, cleaning box, drier; Rotate resist coating machine, drying machine, corrosion device, solvent clean device, alkaline case, cleaning box and drier and link to each other successively, wherein corrosion device comprises main corrosion case and washer box, corrosion case and washer box thereof, is secondary corrosion and cleaning; The solvent clean device comprises the continuous secondary cleaning case of the continuous secondary cleaning case of No. 1 acetone and No. 2 acetone, No. 1 absolute ethyl alcohol and No. 2 absolute ethyl alcohols, reaches higher cleaning corrosion removal effect; The alkalescence case adopts is that volumetric concentration is that 5% sodium hydroxide solution neutralizes, and cleaning box adopts the deionized water cleaning, and drier adopts and dries the wafer mode, also can adopt nitrogen to dry up.
The method for using of the utility model is:
⑴ front wafer surface resist coating, rotating speed 1000r/min～3000r/min, time 8s～20s, the Hua Lan that packs into then places drying box, and temperature is controlled at 85 ℃～110 ℃, stoving time 10min ± 1min.
⑵ join main corrosive liquid: hydrogen peroxide: hydrofluoric acid: deionized water=1:1:8 (volume ratio).Main corrosive liquid usage frequency: every accumulative total is corroded 10 batches of wafers and is changed at least once, the longlyest uses an order of classes or grades at school.
Join 201 corrosive liquids: hydrogen peroxide: ammoniacal liquor: EDTA saturated aqueous solution=20:1:30 (volume ratio).201 corrosive liquid usage frequencies: every accumulative total is corroded 10 batches of wafers and is changed at least once, and the longest the use half a day is placed on shading place.
⑶ will spend indigo plant to put into main corrosive liquid to corrode, constantly rock etching time 30s～40s up and down; Wafer is taken out from main corrosive liquid,, use deionized water rinsing again 2 times with 50 ℃～60 ℃ deionized water rinsings 2 times; Put into 201 corrosive liquids then and corrode, constantly rock up and down, etching time 10s～20s; Wafer is taken out from corrosive liquid, and with deionized water rinsing 8 times, that whether inspection piecewise corrodes is clean (not influencing except the edge that battery makes).Do not corrode clean wafer, with 201 corrosive liquids corrosion primary again, the time surpasses 10s, still corrodes not vapor deposition of sordid wafer, stays and treats with reprocessing.
⑷ soak in No. 1 acetone and constantly rock up and down, dissolves fully up to photoresist, immerses acetone 3min～5min then No. 2; And constantly rock up and down, immerse 3min～5min in No. 1 absolute ethyl alcohol again, put into absolute ethyl alcohol 3min～5min No. 2; Use deionized water rinsing afterwards 6 times; Immerse 30s in the 5%NaOH solution again, use deionized water rinsing at last 8 times, dry up with drier drying or nitrogen.The acetone usage frequency: every accumulative total is cleaned 10 batches of wafers and is changed at least once, the longest use week.The absolute ethyl alcohol usage frequency: every accumulative total is cleaned 30 batches of wafers and is changed at least once, the longest use week.5%NaOH solution usage frequency: every accumulative total is cleaned 50 batches of wafers and is changed at least once, the longest use for three weeks.
Claims (2)
1. the bottom electrode of a space three-junction gallium arsenide solar battery removes end etching system; Comprise rotation resist coating machine, drying machine, corrosion device, solvent clean device, alkaline case, cleaning box, drier; It is characterized in that: rotation resist coating machine, drying machine, corrosion device, solvent clean device, alkaline case, cleaning box and drier link to each other successively; Said corrosion device comprises main corrosion case and washer box, corrosion case and washer box thereof; The solvent clean device comprises the acetone case of continuous secondary and continuous absolute ethyl alcohol cleaning case, and alkaline case is the NaOH cleaning case, and cleaning box is the deionized water cleaning box.
2. the bottom electrode of space three-junction gallium arsenide solar battery according to claim 1 removes end etching system, it is characterized in that: said drier adopts nitrogen to dry up mode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201220140938XU CN202585502U (en) | 2012-04-06 | 2012-04-06 | Bottom electrode bottom-removing corrosion system for space triple-junction gallium arsenide solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201220140938XU CN202585502U (en) | 2012-04-06 | 2012-04-06 | Bottom electrode bottom-removing corrosion system for space triple-junction gallium arsenide solar cell |
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| Publication Number | Publication Date |
|---|---|
| CN202585502U true CN202585502U (en) | 2012-12-05 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201220140938XU Expired - Fee Related CN202585502U (en) | 2012-04-06 | 2012-04-06 | Bottom electrode bottom-removing corrosion system for space triple-junction gallium arsenide solar cell |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114164002A (en) * | 2021-10-29 | 2022-03-11 | 华中光电技术研究所（中国船舶重工集团公司第七一七研究所） | Chemical corrosive liquid and corrosion method of sphalerite structure compound semiconductor |
-
2012
- 2012-04-06 CN CN201220140938XU patent/CN202585502U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114164002A (en) * | 2021-10-29 | 2022-03-11 | 华中光电技术研究所（中国船舶重工集团公司第七一七研究所） | Chemical corrosive liquid and corrosion method of sphalerite structure compound semiconductor |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: TIANJIN HENGDIAN SPACE POWER SOURCE CO., LTD. Effective date: 20130503 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 300381 NANKAI, TIANJIN TO: 300384 XIQING, TIANJIN |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20130503 Address after: 300384 Tianjin city Xiqing Haitai Industrial Park Road No. 6 seven branch Patentee after: No.18 Inst., China Electronic Sci-Tech Group Corp. Patentee after: TIANJIN HENGDIAN SPACE POWER SOURCE CO., LTD. Address before: Chuang-tzu 300381 Tianjin city Nankai District liqizhuang Ling Road No. 18 Patentee before: No.18 Inst., China Electronic Sci-Tech Group Corp. |
|
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20121205 Termination date: 20180406 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |