CN202511761U - Wafer thickness and flatness measuring device - Google Patents
Wafer thickness and flatness measuring device Download PDFInfo
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- CN202511761U CN202511761U CN2012200233031U CN201220023303U CN202511761U CN 202511761 U CN202511761 U CN 202511761U CN 2012200233031 U CN2012200233031 U CN 2012200233031U CN 201220023303 U CN201220023303 U CN 201220023303U CN 202511761 U CN202511761 U CN 202511761U
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Abstract
The utility model relates to a wafer thickness and flatness measuring device which is characterized by comprising a portal frame (8-1), a measuring platform (2), a wafer clamping platform (4), a precise measuring head (6) and a fixing cross beam (8). The utility model provides the wafer thickness and flatness measuring device, a fixed portal type structure is employed, natural granite is used as a base material, the structure is stable and reliable, and the measuring device has the following characteristics that: the measurement device is integrated with functions of wafer thickness measurement and wafer flatness measurement; a non-contact measurement mode is used by the measuring device, and wafer fragmentation is avoided; a special vacuum adsorption platform is used by the measuring device to clamp a wafer, the special vacuum adsorption platform is provided with a layer of thin porous material, and that the wafer is adsorbed and not damaged is ensured; after the wafer is clamped, the wafer can be adjusted through a precise two-dimension angle to ensure that a measuring beam is perpendicular to a measured surface of the wafer, and measurement precision is ensured.
Description
Technical field
Belong to Wafer measuring equipment field, be specifically related to measurement mechanism to Wafer thickness and flatness precision measurement.
Background technology
Along with the develop rapidly of semiconductor and chip technology, all kinds of specification Wafer products are more and more, and product diversification must propose requirements at the higher level to Wafer product manufacture and quality control.Wafer product general requirements has 4 inches, 6 inches, 8 inches, 12 inches even bigger specification not wait, and wholely is circular tabular (generally having a little straight flange breach), and generally below 3mm, its material is a hard brittle material to thickness.Because the Wafer product is made up of multilayer material; The Wafer product plane degree and the thickness that consist of finished product all have strict demand; The bad explanation of flatness Wafer product thickness homogeneity is bad; The bad flatness that then directly causes of thickness is bad, so flatness and thickness all will greatly influence the quality and the performance of final decision Wafer finished product.
Tradition Wafer measures the basic thickness that is directed against and measures, and the measuring method of employing is contact type measurement mostly, and this mode is because the probe of gauge head must touch the Wafer surface; In case ergometry changes; Just very likely cause Wafer cracked, in order to reduce this risk as far as possible, the user generally controls through reducing measurement point; And generally only contact the point on the Wafer limit; Then seldom go to measure for intermediate point, the data that must cause like this recording can not reflect the Wafer actual thickness fully, also can't reflect whole the thickness evenness on the Wafer.
Bring the cracked risk of this Wafer of causing in order to reduce because of contact type measurement; Non-contact measurement begins to be applied in the Wafer thickness measurement device gradually; The general at present double testing head correlation mode that adopts; Consider that the Wafer on the streamline is placed on the cylindrical bar; This modes of emplacement must make and adopt the double testing head correlation to measure the thickness to the Wafer edge of energy measurement only, and zone line interferes and can't measure with following gauge head because of the stationary platform that needs Wafer and place, and equally also can't carry out whole breadth scan-type measurement to the Wafer flatness.
Summary of the invention
The technical matters that the utility model will solve provides the measurement mechanism of a kind of Wafer thickness and flatness; Adopt fixedly planer type structure; Adopt natural granite as submount material; Stable and reliable structure comprises a measuring operation platform, vacuum suction and adjustment platform, mutually orthogonal X axle and parts such as Y axle, accurate gauge head; During measurement; Wafer is placed on vacuum suction and the adjustment platform; And through vacuum technique Wafer is adsorbed on vacuum suction and the adjustment platform, to vacuum suction and the design of adjustment platform upper surface special construction, guarantee that Wafer can be not chipping in adsorption operations; After Wafer absorption is good, can the Wafer upper surface be adjusted vertical through bottom adjustment seat with measuring beam; Vacuum suction and adjustment platform and integrally are positioned on the Y axle under the accurate gauge head, can seesaw.Accurate gauge head is fixed on the X axle on the crossbeam, and with the side-to-side movement of X axle, accurate gauge head is vertical with the X axle to constitute the Z axle; This topology layout is guaranteed and can on identical platform, thickness and the flatness to Wafer be measured.
The principle of work of the utility model is for being that the calibrated bolck of A is placed on and adsorbs on the Wafer clamping platform workplace with thickness earlier; Measure the h1 value; This value is set at zero point, again calibrated bolck is removed, Wafer is placed on the Wafer clamping platform workplace adsorbs; Measure the Y value, thereby the thickness X that accurately obtains Wafer is A-Y.
In order to solve the problems of the technologies described above, the technical scheme that the utility model is taked is following:
The measurement mechanism of a kind of Wafer thickness and flatness is characterized in that, comprises portal frame, measuring table, Wafer clamping platform, accurate gauge head and fixed cross beam; On measuring table, be provided with linear axis Y axle, Wafer clamping platform is arranged on the linear axis Y axle, can seesaw along linear axis Y axle; On portal frame, be provided with fixed cross beam; On fixed cross beam, be provided with linear axis X axle, on the Z axle of linear axis X axle, be provided with the moving plate of Z axle, on the moving plate of Z axle, be provided with accurate gauge head; Accurate gauge head can be along the side-to-side movement of linear axis X axle, move up and down along the Z axle, is Wafer clamping platform under the accurate gauge head.
Said linear axis X axle, linear axis Y axle are vertical each other with the Z axle.
Said Wafer clamping platform comprises mount pad, porous thin fiber plate, location edge strip and register pin; Said porous thin fiber plate is positioned at the mount pad top, and said location edge strip is positioned at the edge of porous thin fiber plate, and said register pin is positioned on the edge strip of location.
Preferably, on said edge strip, be provided with two register pins.
Under said porous thin fiber plate is the airslide structure, through vacuumizing, porous thin fiber plate and Wafer is adsorbed together.
Below said measuring table, be provided with switch board, be used to control the work of said measurement mechanism.
The principle of work of said measurement mechanism is for being that the calibrated bolck of A is placed on and adsorbs on the Wafer clamping platform workplace with thickness earlier; Measure the h1 value; This value is set at zero point, again calibrated bolck is removed, Wafer is placed on the Wafer clamping platform workplace adsorbs; Measure the Y value, thereby the thickness X that accurately obtains Wafer is A-Y.
Preferably, the material of said measuring table is a natural granite.
A kind of Wafer thickness that the utility model provides and the measurement mechanism of flatness; Adopt fixedly planer type structure; Adopt natural granite as submount material; Stable and reliable structure comprises a measuring operation platform, vacuum suction and adjustment platform, mutually orthogonal X axle and parts such as Y axle, accurate gauge head.The measurement mechanism of the utility model is compared with Wafer measuring equipment in the past, has following advantage:
1) compatible Wafer thickness measure of this measurement mechanism and the measurement of planeness two big functions are in one;
2) this measurement mechanism adopts the non-contact measurement mode, can not cause Wafer cracked;
3) this measurement mechanism adopts special vacuum absorbing platform clamping Wafer, has the thin porosint of one deck on this vacuum absorbing platform, can guarantee to have adsorbed Wafer but can not cause damage to Wafer;
4) the Wafer clamping can guarantee that through the precise 2-D angular setting measured of measuring beam and Wafer are vertical each other, the assurance measuring accuracy after good.
Description of drawings
Below in conjunction with accompanying drawing the embodiment of the utility model is done further detailed explanation.
Fig. 1 is the measurement mechanism structural drawing of Wafer thickness and flatness;
Fig. 2 is the structural drawing of Wafer clamping platform;
Fig. 3 is measurement model figure;
1 is switch board among the figure, and 2 is measuring table, and 3 is linear axis Y axle, and 4 is Wafer clamping platform, and 5 is Wafer; 6 is accurate gauge head, and 7 is linear axis X axle, and 8 is fixed cross beam, and 8-1 is a portal frame, and 9 is mount pad; 10 is porous thin fiber plate, and 12 are the location edge strip, and 13 is register pin, and 14 is calibrated bolck.
Embodiment
Embodiment
As shown in Figure 1, the measurement mechanism of a kind of Wafer thickness and flatness comprises switch board 1, measuring table 2, linear axis Y axle 3, Wafer clamping platform 4, accurate gauge head 6, linear axis X axle 7, fixed cross beam 8 and portal frame 8-1; On measuring table 2, be provided with linear axis Y axle 3, Wafer clamping platform 4 is arranged on the linear axis Y axle 3, can seesaw along linear axis Y axle 3; On portal frame 8-1, be provided with fixed cross beam 8; On fixed cross beam 8, be provided with linear axis X axle 7, on the Z axle of linear axis X axle 7, be provided with the moving plate of Z axle, on the moving plate of the moving plate of Z axle, be provided with accurate gauge head 6; Accurate gauge head 6 can be along 7 side-to-side movements of linear axis X axle, move up and down along the Z axle, are Wafer clamping platform 4 under the accurate gauge head 6.Below measuring table 2, be provided with switch board 1, be used to control the work of said measurement mechanism.The material of said measuring table 2 is a natural granite.During work, Wafer5 placed on the Wafer clamping platform 4 measure.
As shown in Figure 2, Wafer clamping platform 4 comprises mount pad 9, porous thin fiber plate 10, location edge strip 12 and register pin 13; Said porous thin fiber plate 10 is positioned at mount pad 9 tops, and said location edge strip 12 is positioned at the edge of porous thin fiber plate 10, and said register pin 13 is positioned on the edge strip 12 of location, and edge strip 12 is provided with two register pins 13.Be the airslide structure under the porous thin fiber plate 10; Through vacuumizing, porous thin fiber plate 10 is adsorbed with Wafer5 together, because there is one deck porous thin fiber plate 10 centre; Can guarantee to fit fully with Wafer5 and embrittlement does not take place, guarantee that Wafer5 can be fixed fully.
As shown in Figure 3; Before the measurement, generally the straight flange breach with Wafer5 is close on the edge strip 12 of location, restarts to take out true hole button Wafer5 is absorbed and fixed on the Wafer clamping platform 4; After fixing; Vertical through this platform below precise 2-D angle-adjusting mechanism adjustment Wafer5 upper surface with measuring beam, after adjusting, directly carry out the Wafer5 thickness and the measurement of planeness and get final product.Measuring principle; Be that the calibrated bolck 14 of A is placed on Wafer clamping platform 4 workplaces and adsorbs earlier with thickness, measure the h1 value, this value is set at zero point; Again calibrated bolck 14 is removed; Wafer5 be placed on Wafer clamping platform 4 workplaces adsorb, measure the Y value, thereby the thickness X that accurately obtains Wafer5 is A-Y.
The principle of measurement plane degree is following: directly Wafer is placed on the platform for placing absorption and fixes; Can drive gauge head through the motion of axle system and carry out the scan-type measurement; Scanning can obtain a wave curve; Handle through software algorithm, the wave peak is linked to be straight line, the wave minimum point is linked to be straight line, the relative height difference between two parallel lines is the flatness of Wafer.
Above embodiment purpose is to explain the utility model, and the protection domain of unrestricted the utility model, all application that come by the utility model simple change all drop in the protection domain of the utility model.
Claims (7)
1. the measurement mechanism of Wafer thickness and flatness is characterized in that, comprises portal frame (8-1), measuring table (2), Wafer clamping platform (4), accurate gauge head (6) and fixed cross beam (8); On measuring table (2), be provided with linear axis Y axle (3); Wafer clamping platform (4) is arranged on the linear axis Y axle (3); Can seesaw along linear axis Y axle (3), on portal frame (8-1), be provided with fixed cross beam (8), on fixed cross beam (8), be provided with linear axis X axle (7); On the Z axle of linear axis X axle (7), be provided with the moving plate of Z axle; On the moving plate of Z axle, be provided with accurate gauge head (6), accurate gauge head (6) can be along linear axis X axle (7) side-to-side movement, move up and down along the Z axle, is Wafer clamping platform (4) under the accurate gauge head (6).
2. measurement mechanism according to claim 1 is characterized in that, said linear axis X axle (7), linear axis Y axle (3) are vertical each other with the Z axle.
3. measurement mechanism according to claim 1 is characterized in that, said Wafer clamping platform (4) comprises mount pad (9), porous thin fiber plate (10), location edge strip (12) and register pin (13); Said porous thin fiber plate (10) is positioned at mount pad (9) top, and said location edge strip (12) is positioned at the edge of porous thin fiber plate (10), and said register pin (13) is positioned on the location edge strip (12).
4. measurement mechanism according to claim 3 is characterized in that, on said edge strip (12), is provided with two register pins (13).
5. measurement mechanism according to claim 3 is characterized in that, under said porous thin fiber plate (10), is the airslide structure, through vacuumizing, porous thin fiber plate (10) and Wafer (5) is adsorbed together.
6. according to each described measurement mechanism of claim 1-5, it is characterized in that, be provided with switch board (1), be used to control the work of said measurement mechanism in the below of said measuring table (2).
7. according to each described measurement mechanism of claim 1-5, it is characterized in that the material of said measuring table (2) is a natural granite.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012200233031U CN202511761U (en) | 2012-01-19 | 2012-01-19 | Wafer thickness and flatness measuring device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012200233031U CN202511761U (en) | 2012-01-19 | 2012-01-19 | Wafer thickness and flatness measuring device |
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| Publication Number | Publication Date |
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| CN202511761U true CN202511761U (en) | 2012-10-31 |
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| CN2012200233031U Expired - Fee Related CN202511761U (en) | 2012-01-19 | 2012-01-19 | Wafer thickness and flatness measuring device |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103017691A (en) * | 2012-11-30 | 2013-04-03 | 上海华力微电子有限公司 | Device and method for detecting flatness of silicon chip |
| CN103398663A (en) * | 2013-08-09 | 2013-11-20 | 昆山允可精密工业技术有限公司 | Automatic thin plate thickness measuring device with single measuring head |
| CN103398664A (en) * | 2013-08-09 | 2013-11-20 | 昆山允可精密工业技术有限公司 | Instrument for measuring thickness of thin plate with high bright reflective surface |
| CN103453858A (en) * | 2013-09-02 | 2013-12-18 | 深圳市大族激光科技股份有限公司 | Planeness detection and correction all-in-one machine and detection and correction method |
| CN104048625A (en) * | 2013-03-12 | 2014-09-17 | 昆山允可精密工业技术有限公司 | Automatic contact instrument used for measuring thin sheet material dimensions |
| CN104677263A (en) * | 2015-03-12 | 2015-06-03 | 苏州市吴中区木渎华利模具加工店 | Work method of detection machine for belt pulley of compressor |
| CN104677265A (en) * | 2015-03-12 | 2015-06-03 | 苏州市吴中区木渎华利模具加工店 | Detection machine for belt pulley of compressor |
| CN104677264A (en) * | 2015-03-12 | 2015-06-03 | 苏州市吴中区木渎华利模具加工店 | Electronically controlled dual-axis measuring head of detection machine for belt pulley of compressor |
-
2012
- 2012-01-19 CN CN2012200233031U patent/CN202511761U/en not_active Expired - Fee Related
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103017691A (en) * | 2012-11-30 | 2013-04-03 | 上海华力微电子有限公司 | Device and method for detecting flatness of silicon chip |
| CN103017691B (en) * | 2012-11-30 | 2015-09-30 | 上海华力微电子有限公司 | A kind of device and method detecting silicon chip flatness |
| CN104048625A (en) * | 2013-03-12 | 2014-09-17 | 昆山允可精密工业技术有限公司 | Automatic contact instrument used for measuring thin sheet material dimensions |
| CN103398663A (en) * | 2013-08-09 | 2013-11-20 | 昆山允可精密工业技术有限公司 | Automatic thin plate thickness measuring device with single measuring head |
| CN103398664A (en) * | 2013-08-09 | 2013-11-20 | 昆山允可精密工业技术有限公司 | Instrument for measuring thickness of thin plate with high bright reflective surface |
| CN103453858A (en) * | 2013-09-02 | 2013-12-18 | 深圳市大族激光科技股份有限公司 | Planeness detection and correction all-in-one machine and detection and correction method |
| CN103453858B (en) * | 2013-09-02 | 2016-04-13 | 大族激光科技产业集团股份有限公司 | Flatness detects to be revised all-in-one and detects modification method |
| CN104677263A (en) * | 2015-03-12 | 2015-06-03 | 苏州市吴中区木渎华利模具加工店 | Work method of detection machine for belt pulley of compressor |
| CN104677265A (en) * | 2015-03-12 | 2015-06-03 | 苏州市吴中区木渎华利模具加工店 | Detection machine for belt pulley of compressor |
| CN104677264A (en) * | 2015-03-12 | 2015-06-03 | 苏州市吴中区木渎华利模具加工店 | Electronically controlled dual-axis measuring head of detection machine for belt pulley of compressor |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20121031 Termination date: 20200119 |
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| CF01 | Termination of patent right due to non-payment of annual fee |