CN103217115A - Measuring device for wafer thickness and wafer planeness - Google Patents
Measuring device for wafer thickness and wafer planeness Download PDFInfo
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- CN103217115A CN103217115A CN2012100157530A CN201210015753A CN103217115A CN 103217115 A CN103217115 A CN 103217115A CN 2012100157530 A CN2012100157530 A CN 2012100157530A CN 201210015753 A CN201210015753 A CN 201210015753A CN 103217115 A CN103217115 A CN 103217115A
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Abstract
The invention relates to a measuring device for wafer thickness and wafer planeness. The measuring device is characterized by comprising a portal frame (8-1), a measuring platform (2), a Wafer clamping platform (4), a precise measuring head (6) and a fixed cross beam (8). The measuring device for the wafer thickness and the wafer planeness adopts a fixed portal frame type structure, adopts natural granite as base materials, and is stable and reliable in structure. The measuring device for the wafer thickness and the wafer planeness has the advantages that the measuring device integrates a Wafer thickness measuring function and a Wafer planeness measuring function, the measuring device adopts a non-contact type measuring mode, Wafer crazing cannot be caused, the measuring device adopts a special vacuum absorption platform to clamp a Wafer, the vacuum absorption platform is provided with a layer of thin multi-hole materials to ensure the Wafer is well absorbed, damage is not caused to the Wafer, after the Wafer is clamped, precise two-dimensional angles are adjusted to ensure the fact that measuring light beams are perpendicular to a measured surface of the Wafer, and measuring precision is ensured.
Description
Technical field
Belong to Wafer measuring equipment field, be specifically related to measurement mechanism at Wafer thickness and flatness precision measurement.
Background technology
Along with the develop rapidly of semiconductor and chip technology, all kinds of specification Wafer products are more and more, and product diversification must propose requirements at the higher level to Wafer product manufacture and quality control.Wafer product general requirements has 4 inches, 6 inches, 8 inches, 12 inches even bigger specification not wait, and wholely is circular tabular (generally having a little straight flange breach), and generally below 3mm, its material is a hard brittle material to thickness.Because the Wafer product is made up of multilayer material, the Wafer product plane degree and the thickness that consist of finished product all have strict demand, the bad explanation of flatness Wafer product thickness homogeneity is bad, the bad flatness that then directly causes of thickness is bad, so flatness and thickness all will greatly influence the quality and the performance of final decision Wafer finished product.
Tradition Wafer measures and measures at thickness substantially, the measuring method that adopts mostly is contact type measurement greatly, this mode is because the probe of gauge head must touch the Wafer surface, in case ergometry changes, just very likely cause Wafer cracked, in order to reduce this risk as far as possible, the user generally controls by reducing measurement point, and generally only contact the point on the Wafer limit, then seldom go to measure for intermediate point, the data that must cause like this recording can not reflect the Wafer actual thickness fully, also can't reflect whole the thickness evenness on the Wafer.
Bring the cracked risk of this Wafer of causing in order to reduce because of contact type measurement, non-contact measurement begins to be applied in the Wafer thickness measurement device gradually, the general at present double testing head correlation mode that adopts, consider that the Wafer on the streamline is placed on the cylindrical bar, this modes of emplacement must make and adopt the double testing head correlation to measure the thickness to the Wafer edge of energy measurement only, and zone line interferes and can't measure with following gauge head because of the stationary platform that needs the Wafer placement, equally also can't carry out whole breadth scan-type at the Wafer flatness and measure.
Summary of the invention
The technical problem to be solved in the present invention provides the measurement mechanism of a kind of wafer thickness and flatness, adopt fixedly planer type structure, adopt natural granite as submount material, Stability Analysis of Structures is reliable, comprises a measuring operation platform, vacuum suction and adjusts platform, mutually orthogonal X-axis and parts such as Y-axis, accurate gauge head; During measurement, Wafer is placed on vacuum suction and adjusts on the platform, and Wafer is adsorbed on vacuum suction and adjusts on the platform by vacuum technique, at vacuum suction and adjust the design of platform upper surface special construction, guarantee that Wafer can be not chipping in adsorption operations; Wafer can adjust the Wafer upper surface vertical with measuring beam by bottom adjustment seat after adsorbing well; Vacuum suction and adjust platform and integrally and be positioned on the Y-axis under the accurate gauge head can seesaw.Accurate gauge head is fixed on the X-axis on the crossbeam, and with the X-axis side-to-side movement, accurate gauge head is vertical with X-axis to constitute the Z axle; This topology layout is guaranteed and can thickness and the flatness to Wafer be measured on identical platform.
Principle of work of the present invention is for earlier being that the calibrated bolck of A is placed on and adsorbs on the Wafer clamping platform workplace with thickness, measure the h1 value, this value is set at zero point, again calibrated bolck is removed, Wafer is placed on the Wafer clamping platform workplace adsorbs, measure the Y value, thereby the thickness X that accurately obtains Wafer is A-Y.
In order to solve the problems of the technologies described above, the technical scheme that the present invention takes is as follows:
The measurement mechanism of a kind of wafer thickness and flatness is characterized in that, comprises portal frame, measuring table, Wafer clamping platform, accurate gauge head and fixed cross beam; On measuring table, be provided with the linear axis Y-axis, Wafer clamping platform is arranged on the linear axis Y-axis, can seesaw along the linear axis Y-axis, on portal frame, be provided with fixed cross beam, on fixed cross beam, be provided with the linear axis X-axis, on the Z of linear axis X-axis axle, be provided with the moving plate of Z axle, on the moving plate of Z axle, be provided with accurate gauge head, accurate gauge head can be along the side-to-side movement of linear axis X-axis, move up and down along the Z axle, is Wafer clamping platform under the accurate gauge head.
Described linear axis X-axis, linear axis Y-axis and Z axle are vertical mutually.
Described Wafer clamping platform comprises mount pad, porous thin fiber plate, location edge strip and register pin; Described porous thin fiber plate is positioned at the mount pad top, and described location edge strip is positioned at the edge of porous thin fiber plate, and described register pin is positioned on the edge strip of location.
Preferably, on described edge strip, be provided with two register pins.
Under described porous thin fiber plate is the airslide structure, by vacuumizing, porous thin fiber plate and Wafer is adsorbed together.
Below described measuring table, be provided with switch board, be used to control the work of described measurement mechanism.
The principle of work of described measurement mechanism is for earlier being that the calibrated bolck of A is placed on and adsorbs on the Wafer clamping platform workplace with thickness, measure the h1 value, this value is set at zero point, again calibrated bolck is removed, Wafer is placed on the Wafer clamping platform workplace adsorbs, measure the Y value, thereby the thickness X that accurately obtains Wafer is A-Y.
Preferably, the material of described measuring table is a natural granite.
The measurement mechanism of a kind of wafer thickness provided by the invention and flatness, adopt fixedly planer type structure, adopt natural granite as submount material, Stability Analysis of Structures is reliable, comprises a measuring operation platform, vacuum suction and adjusts platform, mutually orthogonal X-axis and parts such as Y-axis, accurate gauge head.Measurement mechanism of the present invention is compared with Wafer measuring equipment in the past, has following advantage:
1) compatible Wafer thickness measure of this measurement mechanism and the measurement of planeness two big functions are in one;
2) this measurement mechanism adopts the non-contact measurement mode, can not cause Wafer cracked;
3) this measurement mechanism adopts special vacuum absorbing platform clamping Wafer, has the thin porosint of one deck on this vacuum absorbing platform, can guarantee to have adsorbed Wafer but can not cause damage to Wafer;
4) the Wafer clamping can guarantee that by the precise 2-D angular setting measured of measuring beam and Wafer are vertical mutually, the assurance measuring accuracy after good.
Description of drawings
Below in conjunction with accompanying drawing the specific embodiment of the present invention is described in further detail.
Fig. 1 is the measurement mechanism structural drawing of wafer thickness and flatness;
Fig. 2 is the structural drawing of Wafer clamping platform;
Fig. 3 is measurement model figure;
1 is switch board among the figure, and 2 is measuring table, and 3 is the linear axis Y-axis, and 4 is Wafer clamping platform, and 5 is Wafer, 6 is accurate gauge head, and 7 is the linear axis X-axis, and 8 is fixed cross beam, and 8-1 is a portal frame, and 9 is mount pad, 10 is porous thin fiber plate, and 12 are the location edge strip, and 13 is register pin, and 14 is calibrated bolck.
Embodiment
Embodiment
As shown in Figure 1, the measurement mechanism of a kind of wafer thickness and flatness comprises switch board 1, measuring table 2, linear axis Y-axis 3, Wafer clamping platform 4, accurate gauge head 6, linear axis X-axis 7, fixed cross beam 8 and portal frame 8-1; On measuring table 2, be provided with linear axis Y-axis 3, Wafer clamping platform 4 is arranged on the linear axis Y-axis 3, can seesaw along linear axis Y-axis 3, on portal frame 8-1, be provided with fixed cross beam 8, on fixed cross beam 8, be provided with linear axis X-axis 7, on the Z of linear axis X-axis 7 axle, be provided with the moving plate of Z axle, on the moving plate of the moving plate of Z axle, be provided with accurate gauge head 6, accurate gauge head 6 can be along 7 side-to-side movements of linear axis X-axis, move up and down along the Z axle, are Wafer clamping platform 4 under the accurate gauge head 6.Below measuring table 2, be provided with switch board 1, be used to control the work of described measurement mechanism.The material of described measuring table 2 is a natural granite.During work, Wafer5 placed on the Wafer clamping platform 4 measure.
As shown in Figure 2, Wafer clamping platform 4 comprises mount pad 9, porous thin fiber plate 10, location edge strip 12 and register pin 13; Described porous thin fiber plate 10 is positioned at mount pad 9 tops, and described location edge strip 12 is positioned at the edge of porous thin fiber plate 10, and described register pin 13 is positioned on the edge strip 12 of location, and edge strip 12 is provided with two register pins 13.Be the airslide structure under the porous thin fiber plate 10, by vacuumizing, porous thin fiber plate 10 and Wafer5 are adsorbed together, because there is one deck porous thin fiber plate 10 centre, can guarantee to fit fully with Wafer5 and embrittlement does not take place, guarantee that Wafer5 can be fixed fully.
As shown in Figure 3, before the measurement, generally the straight flange breach with Wafer5 is close on the edge strip 12 of location, restart and take out true hole button Wafer5 is absorbed and fixed on the Wafer clamping platform 4, after fixing, it is vertical with measuring beam to adjust the Wafer5 upper surface by this platform below precise 2-D angle-adjusting mechanism, after adjusting, directly carries out the Wafer5 thickness and the measurement of planeness and gets final product.Measuring principle, earlier be that the calibrated bolck 14 of A is placed on Wafer clamping platform 4 workplaces and adsorbs with thickness, measure the h1 value, this value is set at zero point, again calibrated bolck 14 is removed, Wafer5 be placed on Wafer clamping platform 4 workplaces adsorb, measure the Y value, thereby the thickness X that accurately obtains Wafer5 is A-Y.
The principle of measurement plane degree is as follows: directly wafer is placed on the platform for placing absorption and fixes, can drive gauge head by the motion of axle system and carry out the scan-type measurement, scanning can obtain a wave curve, handle by software algorithm, the wave peak is linked to be straight line, the wave minimum point is linked to be straight line, and the relative height difference between two parallel lines is the flatness of wafer.
Above embodiment purpose is to illustrate the present invention, and unrestricted protection scope of the present invention, all application that come by simple change of the present invention all drop in protection scope of the present invention.
Claims (8)
1. the measurement mechanism of wafer thickness and flatness is characterized in that, comprises portal frame (8-1), measuring table (2), Wafer clamping platform (4), accurate gauge head (6) and fixed cross beam (8); On measuring table (2), be provided with linear axis Y-axis (3), Wafer clamping platform (4) is arranged on the linear axis Y-axis (3), can seesaw along linear axis Y-axis (3), on portal frame (8-1), be provided with fixed cross beam (8), on fixed cross beam (8), be provided with linear axis X-axis (7), on the Z axle of linear axis X-axis (7), be provided with the moving plate of Z axle, on the moving plate of Z axle, be provided with accurate gauge head (6), accurate gauge head (6) can be along linear axis X-axis (7) side-to-side movement, move up and down along the Z axle, is Wafer clamping platform (4) under the accurate gauge head (6).
2. measurement mechanism according to claim 1 is characterized in that, described linear axis X-axis (7), linear axis Y-axis (3) are vertical mutually with the Z axle.
3. measurement mechanism according to claim 1 is characterized in that, described Wafer clamping platform (4) comprises mount pad (9), porous thin fiber plate (10), location edge strip (12) and register pin (13); Described porous thin fiber plate (10) is positioned at mount pad (9) top, and described location edge strip (12) is positioned at the edge of porous thin fiber plate (10), and described register pin (13) is positioned on the location edge strip (12).
4. measurement mechanism according to claim 3 is characterized in that, is provided with two register pins (13) on described edge strip (12).
5. measurement mechanism according to claim 3 is characterized in that, is the airslide structure under described porous thin fiber plate (10), by vacuumizing, adsorbs together with porous thin fiber plate (10) with Wafer(5).
6. according to each described measurement mechanism of claim 1-5, it is characterized in that, be provided with switch board (1), be used to control the work of described measurement mechanism in the below of described measuring table (2).
7. according to each described measurement mechanism of claim 1-5, it is characterized in that, the principle of work of described measurement mechanism is for earlier being that the calibrated bolck (14) of A is placed on and adsorbs on Wafer clamping platform (4) workplace with thickness, measure the h1 value, this value is set at zero point, again standard (14) piece is removed, Wafer(5) be placed on Wafer clamping platform (4) workplace and adsorb, measure the Y value, thereby accurately obtain Wafer(5) thickness X be A-Y.
8. according to each described measurement mechanism of claim 1-5, it is characterized in that the material of described measuring table (2) is a natural granite.
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| CN2012100157530A CN103217115A (en) | 2012-01-19 | 2012-01-19 | Measuring device for wafer thickness and wafer planeness |
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| CN2012100157530A CN103217115A (en) | 2012-01-19 | 2012-01-19 | Measuring device for wafer thickness and wafer planeness |
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103822589A (en) * | 2014-02-12 | 2014-05-28 | 元虎虎 | Thickness-flatness testing machine |
| CN103940380A (en) * | 2014-04-08 | 2014-07-23 | 广东正业科技股份有限公司 | Planeness test method and device |
| CN104236487A (en) * | 2014-09-29 | 2014-12-24 | 中国科学院光电技术研究所 | Device and method for detecting flatness |
| CN105910530A (en) * | 2016-04-26 | 2016-08-31 | 中国电子科技集团公司第二十六研究所 | Wafer parallelism testing method |
| CN106643585A (en) * | 2017-01-05 | 2017-05-10 | 四川永森航空材料科技有限公司 | Turbine blade flatness measuring tool |
| CN107063148A (en) * | 2017-01-03 | 2017-08-18 | 中国科学院苏州生物医学工程技术研究所 | A kind of accurate measurement multi-function experimental rig |
| CN108168448A (en) * | 2018-02-07 | 2018-06-15 | 大连誉洋工业智能有限公司 | A kind of method based on robot assisted camera detection and localization workpiece height |
| CN108225197A (en) * | 2018-01-20 | 2018-06-29 | 东莞领丰电子有限公司 | A kind of thickness measure smelting tool |
| CN110095074A (en) * | 2019-04-17 | 2019-08-06 | 西安航天计量测试研究所 | A kind of high-precision laser measuring system and method |
| CN112629439A (en) * | 2021-01-04 | 2021-04-09 | 四川大学 | Fixed gantry type orthogonal double-laser measuring head measuring method |
| CN112880597A (en) * | 2019-12-26 | 2021-06-01 | 南京力安半导体有限公司 | Method for measuring wafer flatness |
| CN113458998A (en) * | 2021-06-23 | 2021-10-01 | 安徽天航机电有限公司 | Vacuum adsorption type clamping detection device for easily-deformed parts and use method thereof |
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| US20080204748A1 (en) * | 2007-02-27 | 2008-08-28 | Disco Corporation | Measuring device for workpiece held on chuck table |
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Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103822589A (en) * | 2014-02-12 | 2014-05-28 | 元虎虎 | Thickness-flatness testing machine |
| CN103822589B (en) * | 2014-02-12 | 2016-09-07 | 元虎虎 | Thickness and flatness measuring device |
| CN103940380A (en) * | 2014-04-08 | 2014-07-23 | 广东正业科技股份有限公司 | Planeness test method and device |
| CN104236487A (en) * | 2014-09-29 | 2014-12-24 | 中国科学院光电技术研究所 | Device and method for detecting flatness |
| CN105910530A (en) * | 2016-04-26 | 2016-08-31 | 中国电子科技集团公司第二十六研究所 | Wafer parallelism testing method |
| CN107063148A (en) * | 2017-01-03 | 2017-08-18 | 中国科学院苏州生物医学工程技术研究所 | A kind of accurate measurement multi-function experimental rig |
| CN106643585A (en) * | 2017-01-05 | 2017-05-10 | 四川永森航空材料科技有限公司 | Turbine blade flatness measuring tool |
| CN108225197A (en) * | 2018-01-20 | 2018-06-29 | 东莞领丰电子有限公司 | A kind of thickness measure smelting tool |
| CN108225197B (en) * | 2018-01-20 | 2020-08-25 | 东莞领丰电子有限公司 | Thickness measurement smelting tool |
| CN108168448A (en) * | 2018-02-07 | 2018-06-15 | 大连誉洋工业智能有限公司 | A kind of method based on robot assisted camera detection and localization workpiece height |
| CN110095074A (en) * | 2019-04-17 | 2019-08-06 | 西安航天计量测试研究所 | A kind of high-precision laser measuring system and method |
| CN110095074B (en) * | 2019-04-17 | 2024-06-07 | 西安航天计量测试研究所 | High-precision laser measurement system and method |
| CN112880597A (en) * | 2019-12-26 | 2021-06-01 | 南京力安半导体有限公司 | Method for measuring wafer flatness |
| CN112629439A (en) * | 2021-01-04 | 2021-04-09 | 四川大学 | Fixed gantry type orthogonal double-laser measuring head measuring method |
| CN112629439B (en) * | 2021-01-04 | 2024-04-09 | 四川大学 | Fixed gantry type orthogonal double-laser measuring head measuring method |
| CN113458998A (en) * | 2021-06-23 | 2021-10-01 | 安徽天航机电有限公司 | Vacuum adsorption type clamping detection device for easily-deformed parts and use method thereof |
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Application publication date: 20130724 |