CN202491166U - Grinding head and grinding device capable of enhancing wafer grinding uniformity - Google Patents

Grinding head and grinding device capable of enhancing wafer grinding uniformity Download PDF

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CN202491166U
CN202491166U CN 201220035452 CN201220035452U CN202491166U CN 202491166 U CN202491166 U CN 202491166U CN 201220035452 CN201220035452 CN 201220035452 CN 201220035452 U CN201220035452 U CN 201220035452U CN 202491166 U CN202491166 U CN 202491166U
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grinding
wafer
grinding head
uniformity
cooling liquid
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陈枫
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Semiconductor Manufacturing International Beijing Corp
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Semiconductor Manufacturing International Shanghai Corp
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Abstract

本实用新型公开了一种提高晶圆研磨均匀性的研磨头,包括下方带有限位环的研磨头本体,还包括一设置于所述研磨头上的限位环冷却装置。本实用新型还公开了一种提高晶圆研磨均匀性的研磨装置,包括研磨头、研磨平台以及研磨垫,所述研磨垫铺设于所述研磨平台上,所述研磨头设置于所述研磨垫上,所述研磨头采用如上所述的研磨头。本实用新型提供的提高晶圆研磨均匀性的研磨头和研磨装置,通过增设限位环冷却装置,可以在晶圆的研磨过程中对限位环的温度进行控制,使得晶圆在研磨过程中周边区域和中心区域的温度趋于一致,进而使得晶圆各个区域的研磨速率趋于一致,从而有效提高晶圆研磨均匀性,显著提高产品良率。

The utility model discloses a grinding head for improving the uniformity of wafer grinding, which comprises a grinding head body with a limiting ring at the bottom and a cooling device for the limiting ring arranged on the grinding head. The utility model also discloses a grinding device for improving the uniformity of wafer grinding, comprising a grinding head, a grinding platform and a grinding pad, the grinding pad is laid on the grinding platform, and the grinding head is arranged on the grinding pad , the grinding head adopts the above-mentioned grinding head. The grinding head and the grinding device for improving the uniformity of wafer grinding provided by the utility model can control the temperature of the limiting ring during the grinding process of the wafer by adding a limiting ring cooling device, so that the wafer is in the grinding process. The temperature of the peripheral area and the central area tends to be consistent, which in turn makes the grinding rate of each area of the wafer tend to be consistent, thereby effectively improving the uniformity of wafer grinding and significantly improving product yield.

Description

提高晶圆研磨均匀性的研磨头和研磨装置Grinding Head and Grinding Device for Improving Wafer Grinding Uniformity

技术领域 technical field

本实用新型涉及半导体制造领域,尤其涉及一种提高晶圆研磨均匀性的研磨头和研磨装置。  The utility model relates to the field of semiconductor manufacturing, in particular to a grinding head and a grinding device for improving the uniformity of wafer grinding. the

背景技术 Background technique

CMP工艺是指化学机械研磨(Chemical Mechanical Polishing)工艺,或称为化学机械平坦化(Chemical Mechanical Planarization)工艺。化学机械研磨工艺是一个复杂的工艺过程,它是将晶圆表面与研磨垫的研磨表面相接触,然后,通过晶圆表面与研磨表面之间的相对运动以及研磨液的作用将晶圆表面平坦化。  The CMP process refers to the chemical mechanical polishing (Chemical Mechanical Polishing) process, or the chemical mechanical planarization (Chemical Mechanical Planarization) process. The chemical mechanical polishing process is a complicated process. It contacts the surface of the wafer with the grinding surface of the polishing pad, and then, through the relative movement between the surface of the wafer and the grinding surface and the action of the grinding liquid, the surface of the wafer is flattened. change. the

通常采用化学机械研磨设备,也称为研磨装置,来进行化学机械研磨工艺。请参阅图1和图2,其中,图1所示是现有的研磨装置的结构俯视示意图,图2所示是现有的研磨装置的结构侧视示意图。现有的研磨装置包括:下方设有限位环120的研磨头101、研磨垫102、研磨液供应管103以及研磨垫清洗液供给管104,所述研磨头101设置于所述研磨垫102的上方,所述研磨液供应管103的研磨液出液口与所述研磨垫清洗液供给管104的清洗液出液口分别设 置于所述研磨垫102的上方,所述研磨液供应管103与所述研磨垫清洗液供给管104并排设置于一横向可移动支架105内,所述研磨液供应管103用于供应研磨液,所述研磨垫清洗液供给管104用于对研磨垫102进行清洗。  Chemical mechanical polishing equipment, also known as a grinding device, is usually used to perform the chemical mechanical polishing process. Please refer to FIG. 1 and FIG. 2 , wherein FIG. 1 is a schematic top view of a conventional grinding device, and FIG. 2 is a schematic side view of a conventional grinding device. Existing grinding device comprises: the grinding head 101 that is provided with limit ring 120 below, grinding pad 102, grinding liquid supply pipe 103 and grinding pad cleaning liquid supply pipe 104, and described grinding head 101 is arranged on the top of described grinding pad 102 The grinding liquid outlet of the grinding liquid supply pipe 103 and the cleaning liquid outlet of the grinding pad cleaning liquid supply pipe 104 are respectively arranged above the grinding pad 102, and the grinding liquid supply pipe 103 and The grinding pad cleaning liquid supply pipe 104 is arranged side by side in a laterally movable bracket 105, the grinding liquid supply pipe 103 is used to supply the grinding liquid, and the grinding pad cleaning liquid supply pipe 104 is used to clean the grinding pad 102 . the

当对晶圆106进行研磨工艺时,将要研磨的晶圆106附着在研磨头101上,该晶圆106的待研磨面向下并接触相对旋转的研磨垫102,研磨头101提供的下压力将该晶圆106紧压到研磨垫102上,所述研磨垫102粘贴于研磨平台(未图示)上,当该研磨平台在马达的带动下旋转时,研磨垫102跟随研磨平台转动;同时,研磨液通过研磨液供应管110输送到研磨垫102上,并通过离心力均匀地分布在研磨垫102上。研磨工艺所使用的研磨液一般包含有化学腐蚀剂和研磨颗粒,通过化学腐蚀剂和所述待研磨表面的化学反应生成较软的容易被去除的材料,然后通过机械摩擦将这些较软的物质从被研磨晶圆106的表面去掉,以达到全局平坦化的效果。  When wafer 106 was carried out grinding process, the wafer 106 to be ground was attached on the grinding head 101, and the to-be-grinding face of this wafer 106 was faced down and contacted the grinding pad 102 of relative rotation, and the downward force provided by grinding head 101 will Wafer 106 is tightly pressed onto the grinding pad 102, and the grinding pad 102 is pasted on the grinding platform (not shown), and when the grinding platform rotates under the drive of the motor, the grinding pad 102 rotates with the grinding platform; at the same time, the grinding The liquid is delivered to the polishing pad 102 through the polishing liquid supply pipe 110 and evenly distributed on the polishing pad 102 by centrifugal force. The abrasive liquid used in the grinding process generally contains chemical etchant and abrasive particles. The chemical reaction between the chemical etchant and the surface to be polished generates softer materials that are easily removed, and then these softer materials are removed from the surface by mechanical friction. The surface of the wafer 106 is ground and removed to achieve a global planarization effect. the

但在使用中发现,晶圆106在研磨后,晶圆106周边区域的厚度相比晶圆106中心区域的厚度有差异,使得晶圆106的研磨效果不均匀,造成产品的良率的下降。经科研人员研究,原因之一就在于,晶圆106在研磨过程中的温度不均匀,具体原因是研磨头的限位环120和研磨垫102在研磨过程中反复摩擦产生的热量,使得靠近研磨垫的晶圆106的周边区域温度相对晶圆的106中心区域有较大程度上升。而不同的温度对应的研磨液的化学反应速率是不同的,进而使得晶圆106各个区域的研磨速率不同,从而造成晶圆106研磨后的厚度 不均匀。  But in use, it is found that after the wafer 106 is ground, the thickness of the peripheral area of the wafer 106 is different from the thickness of the central area of the wafer 106, which makes the grinding effect of the wafer 106 uneven, resulting in a decline in product yield. According to research by scientific researchers, one of the reasons is that the temperature of the wafer 106 is not uniform during the grinding process. The peripheral region of the wafer 106 of the pad has a greater temperature rise relative to the central region of the wafer 106 . The chemical reaction rates of the polishing liquid corresponding to different temperatures are different, and then the polishing rates of each region of the wafer 106 are different, resulting in uneven thickness of the wafer 106 after grinding. the

因此,如何提供一种可以提高晶圆研磨均匀性的研磨头和研磨装置是本领域技术人员亟待解决的一个技术问题。  Therefore, how to provide a grinding head and a grinding device that can improve the uniformity of wafer grinding is a technical problem to be solved urgently by those skilled in the art. the

实用新型内容 Utility model content

本实用新型的目的在于提供一种提高晶圆研磨均匀性的研磨头和研磨装置,通过对限位环进行温度控制,使得晶圆在研磨过程中各个区域的温度趋于一致,提高晶圆研磨的均匀性。  The purpose of the utility model is to provide a grinding head and a grinding device that improve the uniformity of wafer grinding. By controlling the temperature of the limit ring, the temperature of each area of the wafer in the grinding process tends to be consistent, and the wafer grinding is improved. uniformity. the

为了达到上述的目的,本实用新型采用如下技术方案:  In order to achieve the above-mentioned purpose, the utility model adopts the following technical solutions:

一种提高晶圆研磨均匀性的研磨头,包括下方带有限位环的研磨头本体,还包括一设置于所述研磨头上的限位环冷却装置。  A grinding head for improving wafer grinding uniformity, comprising a grinding head body with a limiting ring underneath, and a limiting ring cooling device arranged on the grinding head. the

优选的,在上述的提高晶圆研磨均匀性的研磨头中,所述限位环冷却装置包括从上至下依次叠置于所述研磨头本体上的冷却液供应盘与冷却液收集盘、冷却液供应管以及设置于所述限位环内部的环形冷却通道,所述冷却液供应管的出液口间隔设置于所述冷却液供应盘的底板上方,所述环形冷却通道的两侧分别通过连接管道与所述冷却液供应盘和所述冷却液收集盘连通。  Preferably, in the above-mentioned grinding head for improving the uniformity of wafer grinding, the cooling device for the limiting ring includes a cooling liquid supply plate and a cooling liquid collecting plate stacked on the grinding head body in sequence from top to bottom, The cooling liquid supply pipe and the annular cooling channel arranged inside the limiting ring, the liquid outlets of the cooling liquid supply pipe are arranged above the bottom plate of the cooling liquid supply plate at intervals, and the two sides of the annular cooling channel are respectively The connecting pipe communicates with the cooling liquid supply pan and the cooling liquid collecting pan. the

优选的,在上述的提高晶圆研磨均匀性的研磨头中,所述限位环冷却装置还包括冷却液排放管与阀门,所述冷却液排放管连接于所述冷却液收集盘的侧壁下部,所述阀门设置于所述冷却液排放管上。  Preferably, in the above-mentioned grinding head for improving the uniformity of wafer grinding, the limiting ring cooling device further includes a cooling liquid discharge pipe and a valve, and the cooling liquid discharge pipe is connected to the side wall of the cooling liquid collecting tray In the lower part, the valve is arranged on the coolant discharge pipe. the

优选的,在上述的提高晶圆研磨均匀性的研磨头中,所述环形冷却通道的横截面形状是矩形或圆形或椭圆形。  Preferably, in the above-mentioned grinding head for improving the uniformity of wafer grinding, the cross-sectional shape of the annular cooling channel is rectangular, circular or elliptical. the

优选的,在上述的提高晶圆研磨均匀性的研磨头中,所述冷却液供应盘具有开口向上的第一圆形容置空间,所述冷却液供应盘包括第一圆形底板以及围设于所述第一圆形底板上方的第一环形侧板,所述第一圆形底板和所述第一环形侧板围成所述第一圆形容置空间。  Preferably, in the above-mentioned grinding head for improving the uniformity of wafer grinding, the cooling liquid supply plate has a first circular accommodation space with an upward opening, and the cooling liquid supply plate includes a first circular bottom plate and is surrounded by The first annular side plate above the first circular bottom plate, the first circular bottom plate and the first annular side plate enclose the first circular accommodation space. the

优选的,在上述的提高晶圆研磨均匀性的研磨头中,所述冷却液收集盘内具有第二圆形容置空间,所述冷却液收集盘包括第二圆形底板以及围设于所述第二圆形底板上方的第二环形侧板,所述第二圆形底板和所述第二环形侧板围成所述第二圆形容置空间。  Preferably, in the above-mentioned grinding head for improving the uniformity of wafer grinding, there is a second circular accommodating space in the cooling liquid collecting plate, and the cooling liquid collecting plate includes a second circular bottom plate and is surrounded by the A second annular side plate above the second circular bottom plate, the second circular bottom plate and the second annular side plate enclose the second circular accommodating space. the

优选的,在上述的提高晶圆研磨均匀性的研磨头中,所述提高晶圆研磨均匀性的研磨头还包括研磨头驱动轴,所述研磨头驱动轴依次穿经所述冷却液供应盘与所述冷却液收集盘后与所述研磨头本体固定连接。  Preferably, in the above-mentioned grinding head for improving the uniformity of wafer grinding, the grinding head for improving the uniformity of wafer grinding also includes a grinding head drive shaft, and the grinding head drive shaft passes through the cooling liquid supply plate in sequence It is fixedly connected with the grinding head body behind the cooling liquid collecting plate. the

本实用新型还公开了一种提高晶圆研磨均匀性的研磨装置,包括研磨头、研磨平台以及研磨垫,所述研磨垫铺设于所述研磨平台上,所述研磨头设置于所述研磨垫上,所述研磨头采用如上所述的研磨头。  The utility model also discloses a grinding device for improving the uniformity of wafer grinding, comprising a grinding head, a grinding platform and a grinding pad, the grinding pad is laid on the grinding platform, and the grinding head is arranged on the grinding pad , the grinding head adopts the above-mentioned grinding head. the

优选的,在上述的提高晶圆研磨均匀性的研磨装置中,还包括研磨液供应管与研磨垫清洗液供给管,所述研磨液供应管的研磨液出液口与所述研磨垫清洗液供给管的清洗液出液口分别设置于所述研磨垫的上方,研磨液供应管与研 磨垫清洗液供给管并排设置于一横向可移动支架内。  Preferably, in the above-mentioned polishing device for improving wafer polishing uniformity, it also includes a polishing liquid supply pipe and a polishing pad cleaning liquid supply pipe, and the polishing liquid outlet of the polishing liquid supply pipe is connected to the polishing pad cleaning liquid. The cleaning liquid outlets of the supply pipes are respectively arranged above the polishing pads, and the polishing liquid supply pipes and the polishing pad cleaning liquid supply pipes are arranged side by side in a laterally movable bracket. the

本实用新型提供的提高晶圆研磨均匀性的研磨头和研磨装置,通过增设限位环冷却装置,可以在晶圆的研磨过程中对限位环的温度进行控制,使得晶圆在研磨过程中周边区域和中心区域的温度趋于一致,进而使得晶圆各个区域的研磨速率趋于一致,从而有效提高晶圆研磨均匀性,显著提高产品良率。  The grinding head and the grinding device for improving the uniformity of wafer grinding provided by the utility model can control the temperature of the limiting ring during the grinding process of the wafer by adding a limiting ring cooling device, so that the wafer is in the grinding process. The temperature of the peripheral area and the central area tends to be consistent, which in turn makes the grinding rate of each area of the wafer tend to be consistent, thereby effectively improving the uniformity of wafer grinding and significantly improving product yield. the

附图说明 Description of drawings

本实用新型的提高晶圆研磨均匀性的研磨头和研磨装置由以下的实施例及附图给出。  The grinding head and the grinding device of the utility model for improving the uniformity of wafer grinding are given by the following embodiments and accompanying drawings. the

图1是现有的研磨装置的结构俯视示意图;  Fig. 1 is the structural top view schematic diagram of existing grinding device;

图2是现有的研磨装置的结构侧视示意图;  Fig. 2 is the structural side view schematic diagram of existing grinding device;

图3是本实用新型一实施例的提高晶圆研磨均匀性的研磨装置的结构示意图;  Fig. 3 is a schematic structural view of a grinding device for improving the uniformity of wafer grinding according to an embodiment of the present invention;

图4是本实用新型一实施例的提高晶圆研磨均匀性的研磨头及研磨垫的放大示意图;  4 is an enlarged schematic view of a grinding head and a grinding pad for improving wafer grinding uniformity according to an embodiment of the present invention;

图5是本实用新型一实施例中环形冷却通道的俯视分布示意图。  Fig. 5 is a top view distribution diagram of the annular cooling channel in an embodiment of the present invention. the

图中,101、201-研磨头,102、202-研磨垫,103、203-研磨液供给管,104、204-研磨垫清洗液供给管,105、205-横向可移动支架,106、206-晶圆、207- 研磨头驱动轴、210-研磨头本体,120、220-限位环,221-环形冷却通道,230-冷却液供应盘,240-冷却液收集盘,250-冷却液供应管,260-冷却液排放管,270-第一连接管路,280-第二连接管路。  In the figure, 101, 201-grinding head, 102, 202-grinding pad, 103, 203-grinding liquid supply pipe, 104, 204-grinding pad cleaning liquid supply pipe, 105, 205-transverse movable support, 106, 206- Wafer, 207-grinding head drive shaft, 210-grinding head body, 120, 220-limiting ring, 221-annular cooling channel, 230-coolant supply plate, 240-coolant collection plate, 250-coolant supply pipe , 260-coolant discharge pipe, 270-first connecting pipeline, 280-second connecting pipeline. the

具体实施方式 Detailed ways

以下将对本实用新型的提高晶圆研磨均匀性的研磨头和研磨装置作进一步的详细描述。  The grinding head and the grinding device for improving wafer grinding uniformity of the present invention will be further described in detail below. the

下面将参照附图对本实用新型进行更详细的描述,其中表示了本实用新型的优选实施例,应该理解本领域技术人员可以修改在此描述的本实用新型而仍然实现本实用新型的有利效果。因此,下列描述应当被理解为对于本领域技术人员的广泛知道,而并不作为对本实用新型的限制。  The utility model will be described in more detail below with reference to the accompanying drawings, wherein a preferred embodiment of the utility model is shown, it should be understood that those skilled in the art can modify the utility model described herein and still realize the beneficial effects of the utility model. Therefore, the following description should be understood as the broad knowledge of those skilled in the art, but not as a limitation of the present utility model. the

请参阅图3和图4,其中,图3所示是本实用新型一实施例的提高晶圆研磨均匀性的研磨装置的结构示意图,图4所示是本实用新型一实施例的提高晶圆研磨均匀性的研磨头及研磨垫的放大示意图。本实施例提供的提高晶圆研磨均匀性的研磨装置,包括研磨头201、研磨平台(未图示)以及研磨垫202,所述研磨垫202铺设于所述研磨平台上,所述研磨头201设置于所述研磨垫202上,所述研磨头201采用提高晶圆研磨均匀性的研磨头。  Please refer to Fig. 3 and Fig. 4, wherein Fig. 3 shows a schematic structural view of a grinding device for improving the uniformity of wafer grinding according to an embodiment of the present invention, and Fig. 4 shows a schematic diagram of an embodiment of the present utility model for improving wafer polishing. An enlarged schematic view of the grinding head and pad for grinding uniformity. The grinding device for improving the uniformity of wafer grinding provided by this embodiment includes a grinding head 201, a grinding platform (not shown) and a grinding pad 202, and the grinding pad 202 is laid on the grinding platform, and the grinding head 201 Set on the polishing pad 202, the polishing head 201 is a polishing head that improves the uniformity of wafer polishing. the

所述提高晶圆研磨均匀性的研磨头201包括下方带有限位环220的研磨头本体210,还包括一设置于所述研磨头201的限位环冷却装置。本实施例通过 增设限位环冷却装置,可以在晶圆206的研磨过程中对限位环220的温度进行控制,使得晶圆206在研磨过程中周边区域和中心区域的温度趋于一致,进而使得晶圆206各个区域的研磨速率趋于一致,从而有效提高晶圆206研磨均匀性,显著提高产品良率。  The grinding head 201 for improving the uniformity of wafer grinding includes a grinding head body 210 with a limiting ring 220 underneath, and a limiting ring cooling device disposed on the grinding head 201 . In this embodiment, by adding a cooling device for the limiting ring, the temperature of the limiting ring 220 can be controlled during the grinding process of the wafer 206, so that the temperature of the peripheral area and the central area of the wafer 206 tends to be consistent during the grinding process, and then The grinding rate of each area of the wafer 206 tends to be consistent, thereby effectively improving the grinding uniformity of the wafer 206 and significantly improving the product yield. the

较佳的,在本实施例中,所述限位环冷却装置具体包括从上至下依次叠置于所述研磨头本体210上的冷却液供应盘230与冷却液收集盘240、冷却液供应管250以及设置于所述限位环220内部的环形冷却通道221,请参阅图5,图5所示是本实用新型一实施例中环形冷却通道的俯视分布示意图。所述冷却液供应管250的出液口间隔设置于所述冷却液供应盘230的底部上方,即所述冷却液供应管250与所述冷却液供应盘230不接触,所述环形冷却通道221的两侧分别通过连接管道(即第一连接管道270与第二连接管道280)与所述冷却液供应盘230和所述冷却液收集盘240连通。所述限位环冷却装置还包括冷却液排放管260和阀门(未图示),所述冷却液排放管260连接于所述冷却液收集盘240的侧壁下部,所述阀门设置于所述冷却液排放管260上,通过控制阀门可以对所述冷却液收集盘240内的冷却液进行排放,通常是批次晶圆研磨工作完成后进行冷却液的排放。  Preferably, in this embodiment, the cooling device for the limiting ring specifically includes a cooling liquid supply plate 230, a cooling liquid collecting plate 240, a cooling liquid supply plate and Please refer to FIG. 5 for the tube 250 and the annular cooling passage 221 disposed inside the limiting ring 220 . FIG. 5 is a schematic plan view of the distribution of the annular cooling passage in an embodiment of the present invention. The liquid outlets of the cooling liquid supply pipe 250 are arranged at intervals above the bottom of the cooling liquid supply plate 230, that is, the cooling liquid supply pipe 250 does not contact the cooling liquid supply plate 230, and the annular cooling passage 221 Both sides of the two sides communicate with the cooling liquid supply pan 230 and the cooling liquid collecting pan 240 through connecting pipes (ie, the first connecting pipe 270 and the second connecting pipe 280 ), respectively. The limiting ring cooling device also includes a cooling liquid discharge pipe 260 and a valve (not shown), the cooling liquid discharge pipe 260 is connected to the lower part of the side wall of the cooling liquid collecting pan 240, and the valve is arranged on the On the cooling liquid discharge pipe 260 , the cooling liquid in the cooling liquid collecting tray 240 can be discharged by controlling the valve, and the cooling liquid is usually discharged after batches of wafer grinding are completed. the

其中,所述环形冷却通道221的横截面形状可以是矩形或者圆形的或者椭圆形或者梯形。本实施例中,所述环形冷却通道221的横截面形状与限位环的横截面形状相对应,即采用矩形截面形式。采用矩形截面形式的环形冷却通道 221,可以使得环形冷却通道221对限位环220各个区域的冷却更加均匀,提高晶圆206周边区域各个部位的温度均匀性,从而进一步提高晶圆206研磨均匀性。  Wherein, the cross-sectional shape of the annular cooling channel 221 may be rectangular or circular or elliptical or trapezoidal. In this embodiment, the cross-sectional shape of the annular cooling channel 221 corresponds to the cross-sectional shape of the limiting ring, that is, a rectangular cross-sectional form. Adopting the annular cooling channel 221 in the form of a rectangular cross-section can make the cooling of the annular cooling channel 221 to each area of the limiting ring 220 more uniform, improve the temperature uniformity of each part of the peripheral area of the wafer 206, thereby further improving the grinding uniformity of the wafer 206 . the

在本实施例中,所述冷却液供应盘230具有开口向上的第一圆形容置空间(未图示)。具体地,所述冷却液供应盘230包括第一圆形底板以及围设于所述第一圆形底板上方的第一环形侧板,所述冷却液供应管250的出液口间隔设置于所述冷却液供应盘230的底板即第一圆形底板上方,所述第一圆形底板和所述第一环形侧板围成所述第一圆形容置空间。所述冷却液收集盘240内具有第二圆形容置空间(未图示)。具体地,所述冷却液收集盘240包括第二圆形底板以及围设于所述第二圆形底板上方的第二环形侧板,所述第二圆形底板和所述第二环形侧板围成所述第二圆形容置空间。由于所述冷却液供应盘230和所述冷却液收集盘240结构比较简单,故未作图进行详细说明。另外,冷却液供应盘230与冷却液收集盘240的结构不限于上述结构,上述结构的冷却液供应盘230与冷却液收集盘240具有结构及制造工艺比较简单的优点。  In this embodiment, the cooling liquid supply plate 230 has a first circular accommodating space (not shown) with an opening upward. Specifically, the cooling liquid supply plate 230 includes a first circular bottom plate and a first annular side plate surrounding the first circular bottom plate, and the liquid outlets of the cooling liquid supply pipe 250 are arranged at intervals. The bottom plate of the cooling liquid supply plate 230 is above the first circular bottom plate, the first circular bottom plate and the first annular side plate enclose the first circular accommodating space. The cooling liquid collecting tray 240 has a second circular containing space (not shown). Specifically, the cooling liquid collection tray 240 includes a second circular bottom plate and a second annular side plate surrounding the second circular bottom plate, the second circular bottom plate and the second annular side plate The second circular accommodating space is enclosed. Since the cooling liquid supply pan 230 and the cooling liquid collecting pan 240 are relatively simple in structure, they are not illustrated in detail. In addition, the structures of the cooling liquid supply plate 230 and the cooling liquid collecting plate 240 are not limited to the above structures, and the above structure of the cooling liquid supply plate 230 and the cooling liquid collecting plate 240 has the advantages of relatively simple structure and manufacturing process. the

较佳的,在本实施例中,所述提高晶圆研磨均匀性的研磨头201还包括研磨头驱动轴207,所述研磨头驱动轴207依次穿经所述冷却液供应盘230与所述冷却液收集盘240后与所述研磨头本体210固定连接。  Preferably, in this embodiment, the grinding head 201 for improving wafer grinding uniformity further includes a grinding head drive shaft 207, and the grinding head drive shaft 207 passes through the cooling liquid supply plate 230 and the The cooling liquid collecting plate 240 is then fixedly connected with the grinding head body 210 . the

在晶圆206的研磨过程中,研磨平台带动研磨垫202转动,研磨头驱动轴207带动研磨头本体210、冷却液供应盘230以及冷却液收集盘240转动,研 磨液供应管203向研磨垫202供应研磨液,由于所述冷却液供应管250的出液口间隔设置于所述冷却液供应盘230的上方,因此,从冷却液供应管250出来的冷却液首先流到冷却液供应盘230内,然后,该冷却液经第一连接管道270流入限位环220中的环形冷却通道221内;接着,该冷却液再经第二连接管道280流入冷却液收集盘240中,通常,冷却液收集盘240的容量足够供一批晶圆研磨所需的冷却液。冷却液在流经环形冷却通道221的过程中带走限位环220与研磨垫202摩擦产生的多余热量,将限位环220的温度控制在合理范围内,使得晶圆206在研磨过程中周边区域和中心区域的温度趋于一致,进而使得晶圆206各个区域的研磨速率趋于一致,从而有效提高晶圆206研磨均匀性,最终显著提高产品良率。  During the grinding process of the wafer 206, the grinding platform drives the grinding pad 202 to rotate, the grinding head drive shaft 207 drives the grinding head body 210, the cooling liquid supply plate 230 and the cooling liquid collecting plate 240 to rotate, and the grinding liquid supply pipe 203 flows to the grinding pad. 202 to supply grinding liquid, since the liquid outlets of the cooling liquid supply pipe 250 are arranged above the cooling liquid supply plate 230 at intervals, the cooling liquid coming out of the cooling liquid supply pipe 250 first flows to the cooling liquid supply plate 230 Then, the cooling liquid flows into the annular cooling channel 221 in the limit ring 220 through the first connecting pipe 270; then, the cooling liquid flows into the cooling liquid collecting pan 240 through the second connecting pipe 280, usually, the cooling liquid The capacity of the collection tray 240 is sufficient to supply a batch of cooling liquid required for wafer grinding. During the process of flowing through the annular cooling channel 221, the cooling liquid takes away the excess heat generated by the friction between the limiting ring 220 and the polishing pad 202, and controls the temperature of the limiting ring 220 within a reasonable range, so that the wafer 206 is in the process of grinding. The temperature of the region and the central region tends to be consistent, thereby making the grinding rate of each region of the wafer 206 tend to be consistent, thereby effectively improving the grinding uniformity of the wafer 206 and finally significantly improving the product yield. the

显然,本领域的技术人员可以对本实用新型进行各种改动和变型而不脱离本实用新型的精神和范围。这样,倘若本实用新型的这些修改和变型属于本实用新型权利要求及其等同技术的范围之内,则本实用新型也意图包含这些改动和变型在内。  Obviously, those skilled in the art can make various changes and modifications to the utility model without departing from the spirit and scope of the utility model. In this way, if these modifications and variations of the utility model fall within the scope of the claims of the utility model and equivalent technologies thereof, the utility model is also intended to include these modifications and variations. the

Claims (10)

1.一种提高晶圆研磨均匀性的研磨头,包括下方带有限位环的研磨头本体,其特征在于,还包括一设置于所述研磨头上的限位环冷却装置。 1. A grinding head for improving wafer grinding uniformity, comprising a grinding head body with a limit ring below, characterized in that, it also includes a limit ring cooling device arranged on the grinding head. 2.根据权利要求1所述的提高晶圆研磨均匀性的研磨头,其特征在于,所述限位环冷却装置包括从上至下依次叠置于所述研磨头本体上的冷却液供应盘与冷却液收集盘、冷却液供应管、以及设置于所述限位环内部的环形冷却通道,所述冷却液供应管的出液口间隔设置于所述冷却液供应盘的底板上方,所述环形冷却通道的两侧分别通过连接管道与所述冷却液供应盘和所述冷却液收集盘连通。 2. The grinding head for improving the uniformity of wafer grinding according to claim 1, wherein the limiting ring cooling device comprises a cooling liquid supply plate stacked sequentially on the grinding head body from top to bottom With the cooling liquid collection plate, the cooling liquid supply pipe, and the annular cooling channel arranged inside the limiting ring, the liquid outlet of the cooling liquid supply pipe is arranged above the bottom plate of the cooling liquid supply plate at intervals, and the Both sides of the annular cooling channel communicate with the cooling liquid supply pan and the cooling liquid collecting pan through connecting pipes respectively. 3.根据权利要求2所述的提高晶圆研磨均匀性的研磨头,其特征在于,所述限位环冷却装置还包括冷却液排放管和阀门,所述冷却液排放管连接于所述冷却液收集盘的侧壁下部,所述阀门设置于所述冷却液排放管上。 3. The grinding head for improving the uniformity of wafer grinding according to claim 2, characterized in that, the limiting ring cooling device also includes a coolant discharge pipe and a valve, and the coolant discharge pipe is connected to the cooling The lower part of the side wall of the liquid collecting tray, the valve is arranged on the cooling liquid discharge pipe. 4.根据权利要求2所述的提高晶圆研磨均匀性的研磨头,其特征在于,所述环形冷却通道的横截面形状是矩形或圆形或椭圆形。 4. The grinding head for improving wafer grinding uniformity according to claim 2, characterized in that, the cross-sectional shape of the annular cooling channel is rectangular, circular or elliptical. 5.根据权利要求2所述的提高晶圆研磨均匀性的研磨头,其特征在于,所述冷却液供应盘具有开口向上的第一圆形容置空间。 5 . The grinding head for improving the uniformity of wafer grinding according to claim 2 , wherein the cooling liquid supply plate has a first circular accommodating space with an opening upward. 6 . 6.根据权利要求5所述的提高晶圆研磨均匀性的研磨头,其特征在于,所述冷却液供应盘包括第一圆形底板以及围设于所述第一圆形底板上方的第一环形侧板,所述第一圆形底板和所述第一环形侧板围成所述第一圆形容置空间。  6. The grinding head for improving wafer grinding uniformity according to claim 5, wherein the cooling liquid supply plate comprises a first circular bottom plate and a first circular bottom plate surrounding the first circular bottom plate. The annular side plate, the first circular bottom plate and the first annular side plate enclose the first circular accommodation space. the 7.根据权利要求2所述的提高晶圆研磨均匀性的研磨头,其特征在于,所述冷却液收集盘内具有第二圆形容置空间。 7 . The grinding head for improving wafer grinding uniformity according to claim 2 , wherein a second circular accommodation space is provided in the cooling liquid collecting tray. 8 . 8.根据权利要求7所述的提高晶圆研磨均匀性的研磨头,其特征在于,所述冷却液收集盘包括第二圆形底板以及围设于所述第二圆形底板上方的第二环形侧板,所述第二圆形底板和所述第二环形侧板围成所述第二圆形容置空间。 8. The grinding head for improving the uniformity of wafer grinding according to claim 7, wherein the cooling liquid collecting tray comprises a second circular bottom plate and a second circular bottom plate surrounding the second circular bottom plate. The annular side plate, the second circular bottom plate and the second annular side plate enclose the second circular accommodation space. 9.根据权利要求2所述的提高晶圆研磨均匀性的研磨头,其特征在于,还包括研磨头驱动轴,所述研磨头驱动轴依次穿经所述冷却液供应盘与所述冷却液收集盘后与所述研磨头本体固定连接。 9. The grinding head for improving the uniformity of wafer grinding according to claim 2, further comprising a grinding head drive shaft, the grinding head drive shaft passes through the cooling liquid supply plate and the cooling liquid successively. After collecting the disc, it is fixedly connected with the grinding head body. 10.一种提高晶圆研磨均匀性的研磨装置,包括研磨头、研磨平台以及研磨垫,所述研磨垫铺设于所述研磨平台上,所述研磨头设置于所述研磨垫上,其特征在于,所述研磨头采用如权利要求1~9中任意一项所述的研磨头。  10. A grinding device for improving wafer grinding uniformity, comprising a grinding head, a grinding platform and a grinding pad, the grinding pad is laid on the grinding platform, and the grinding head is arranged on the grinding pad, characterized in that , the grinding head adopts the grinding head according to any one of claims 1-9. the
CN 201220035452 2012-02-03 2012-02-03 Grinding head and grinding device capable of enhancing wafer grinding uniformity Expired - Fee Related CN202491166U (en)

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Cited By (8)

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Publication number Priority date Publication date Assignee Title
CN104308728A (en) * 2014-09-27 2015-01-28 广东工业大学 A polishing head with a vacuum suction cup
CN107891357A (en) * 2017-11-27 2018-04-10 德淮半导体有限公司 Wafer processing apparatus and its processing method
CN107932296A (en) * 2017-12-04 2018-04-20 中电科技集团重庆声光电有限公司 Semiconductor wafer back burnishing device
CN108747721A (en) * 2018-05-29 2018-11-06 李涵 A kind of semiconductor crystal wafer half refines, Refining apparatus
CN110076683A (en) * 2013-08-27 2019-08-02 株式会社荏原制作所 Grinding device
CN111618736A (en) * 2020-04-20 2020-09-04 北京烁科精微电子装备有限公司 Chemical mechanical planarization equipment
CN112536709A (en) * 2020-11-27 2021-03-23 西安奕斯伟硅片技术有限公司 Chemical mechanical polishing method and device
CN115519421A (en) * 2022-10-13 2022-12-27 江苏超芯星半导体有限公司 Processing method of wafer thick slice

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110076683A (en) * 2013-08-27 2019-08-02 株式会社荏原制作所 Grinding device
CN104308728A (en) * 2014-09-27 2015-01-28 广东工业大学 A polishing head with a vacuum suction cup
CN107891357A (en) * 2017-11-27 2018-04-10 德淮半导体有限公司 Wafer processing apparatus and its processing method
CN107932296A (en) * 2017-12-04 2018-04-20 中电科技集团重庆声光电有限公司 Semiconductor wafer back burnishing device
CN107932296B (en) * 2017-12-04 2019-07-30 中电科技集团重庆声光电有限公司 Semiconductor wafer backside polishing device
CN108747721A (en) * 2018-05-29 2018-11-06 李涵 A kind of semiconductor crystal wafer half refines, Refining apparatus
CN108747721B (en) * 2018-05-29 2019-11-01 江苏锡沂高新区科技发展有限公司 A kind of semiconductor crystal wafer partly fine grinding, Refining apparatus
CN111618736A (en) * 2020-04-20 2020-09-04 北京烁科精微电子装备有限公司 Chemical mechanical planarization equipment
CN112536709A (en) * 2020-11-27 2021-03-23 西安奕斯伟硅片技术有限公司 Chemical mechanical polishing method and device
CN115519421A (en) * 2022-10-13 2022-12-27 江苏超芯星半导体有限公司 Processing method of wafer thick slice

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