CN202380082U - Anti-pollution system in LPCVD (Low Pressure Chemical Vapor Deposition) process - Google Patents
Anti-pollution system in LPCVD (Low Pressure Chemical Vapor Deposition) process Download PDFInfo
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- CN202380082U CN202380082U CN201120512974XU CN201120512974U CN202380082U CN 202380082 U CN202380082 U CN 202380082U CN 201120512974X U CN201120512974X U CN 201120512974XU CN 201120512974 U CN201120512974 U CN 201120512974U CN 202380082 U CN202380082 U CN 202380082U
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- lpcvd
- pollution system
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- corrugated pipe
- metallic bellows
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Abstract
The utility model relates to an anti-pollution system in an LPCVD (Low Pressure Chemical Vapor Deposition) process, in particular to an anti-pollution system for a metal corrugated pipe in the LPCVD process. The anti-pollution system comprises the metal corrugated pipe which is arranged on a roller transmission shaft and is used for realizing the axial telescopic movement function of a roller, and a through hole which is positioned at the side wall of a reaction chamber and is used for allowing the roller transmission shaft to pass through, wherein one side of the through hole, which is close to the inner part of the reaction chamber, is provided with a protection device for preventing the reaction gas from flowing into the metal corrugated pipe, and a pore channel is formed in the side wall of the through hole, so that an external inert gas pipeline is communicated with the inner part of the metal corrugated pipe. The system disclosed by the utility model has the advantages that the structure is simple, the metal corrugated pipe can be completely protected during the reaction in the process; and the metal corrugated pipe can work under a completely clean environment, so that the design service life can be realized, and further, the production cost is reduced.
Description
Technical field
The utility model relates to the anti-pollution system in a kind of LPCVD technology, relates to the anti-pollution system of metallic bellows in a kind of LPCVD technology specifically.
Background technology
The future market development of photovoltaic application, especially for the application of the photovoltaic power plant that links to each other with electrical network, key depends on the potentiality that reduce the manufacture of solar cells cost.Thin-film solar cells production process energy consumption is low, possesses the potentiality that reduce starting material and manufacturing cost significantly; Simultaneously, thin-film solar cells still can be generated electricity under low light condition.Therefore, existing market increases the demand of thin-film solar cells just gradually, and the technology of manufacturing thin-film solar cells more becomes hot research in recent years.
ZnO is a kind of N type direct band-gap semicondictor material, and energy gap Eg is 3.37eV under the room temperature.Because its abundant raw materials and nontoxic; Having high electricity leads and high permeability; And stable performance in the H plasma environment, therefore, in area of solar cell; ZnO can further improve the efficient and the stability of Si thin-film solar cells as transparent conductive oxide film, accelerates industrialization process.Seem particularly important as electrode and back reflector before the textured ZnO membrane of light trapping structure.
The growth method of ZnO has a lot; Comprise pulsed laser deposition, low pressure metal organic chemical vapor deposition, radio frequency/intermediate frequency/d.c. sputtering, electron beam and thermal response evaporation, plasma activated chemical vapour deposition, spraying thermolysis and sol-gel method etc., the low pressure metal organic chemical vapor deposition is wherein generally to be used at present and industrialized method.
In the low pressure metal organic chemical vapor deposition; Glass substrate is transported in the metal gas reaction chamber by transmission mechanism; Because the reaction when 200 ℃ of temperature of this gas is the strongest, thus in reaction process, glass substrate be placed on carry out on the hot-plate sedimentary.Being transported to glass substrate by roller, to be placed on the hot-plate this process following: after glass is transported to the predetermined position by roller; Thereby hold glass substrate by the thimble system rise that is positioned at the hot-plate below and leave roller; At this moment roller system shrinks to both sides and gets out of the way region, glass below; General who has surrendered's glass is placed on heater plate surface under the thimble system afterwards, and technology begins to carry out subsequently.
Be placed in the process of hot-plate being transported to glass substrate by roller, the realization that roller shrinks is to realize through stretching of vacuum ripple pipe.The characteristics of vacuum ripple pipe are under pressure, axial force, transverse force or moment of flexure effect, all can produce corresponding displacement; And have resistance to pressure, vacuum leakproofness, erosion resistance, temperature stability and life-time service life-span, in many industrial circles, be widely used.The fatigue lifetime of vacuum ripple pipe is relevant with its structure and material therefor, also with working conditions much relations is arranged.In existing low pressure metal organic chemical vapor deposition (LPCVD) technology because reaction chamber is full of reactant gases, so with reactant gases surface in contact growing ZnO thin-film all.As shown in Figure 1, general existing LPCVD process system is roughly by the transport unit 1 of glass substrate, the telescopic drive slide unit 2 of transport unit; Metallic bellows 3, technological reaction chamber 4, vacuum unit are taken out mouth 5; Warm table 6 and metallic bellows joint flange 7 compositions such as grade; Metallic bellows is the parts that are used for hermetic sealing substrate transmitting device and technological reaction chamber, simultaneously can under the effect of the telescopic drive slide unit of transport unit, do expanding-contracting action.
Through hole 8 as shown in Figure 2, as to leave for transport unit on the reaction chamber sidewall is used for making the transmission shaft of transport unit to get into reaction chamber inside.The inevitable diameter of the diameter of through hole 8 greater than transferring shaft of transfer machine.This has caused when process gas reacts, and has a large amount of reactant gasess to be deposited by the inside that through hole enters into metallic bellows, thereby has greatly shortened the work-ing life of vacuum ripple pipe.
Corresponding existing safeguard procedures are attached to lead to the hole site with shield cap as shown in Figure 39, prevent that a large amount of gases from getting into bellows interior.The enforcement of this measure, the life-span of having improved metallic bellows, but effect and effect are not fairly obvious.Reason is; Because the singularity that transmitting device transmits; The transmission shaft existence rotatablely moves and also has elastic motion simultaneously, and this has just limited the stopping property of shield cap protection, and is non-airtight fully; Under vacuum environment, technological reaction gas still very easily gets into metallic bellows inside and carries out deposition reaction.The result who causes like this passes through long gas reaction exactly, the bellows interior ZnO film of also having grown, and this life-span for metallic bellows has produced very big influence, and is reduced to 1/5 of life the work-ing life of corrugated tube.
Summary of the invention
The utility model provide a kind of simple in structure, can effectively prevent system and method thereof that metallic bellows in the LPCVD technology is polluted by reactant gases; Metallic bellows is protected during technological reaction completely; Can realize metallic bellows work under complete clean environment; Thereby reach design service life, and then reduce production costs.
For solving the problems of the technologies described above, the utility model technical scheme is following:
Anti-pollution system in a kind of LPCVD technology; Comprise be located at be used on the roller transmission shaft to realize roller shaft to the metallic bellows of stretching motion function be positioned at the through hole that makes the roller transmission shaft be able to pass on the reaction chamber sidewall; Be provided with the safety guard that prevents reactant gases inflow metallic bellows near reaction chamber inside one side on the through hole, be preferably shield cap; Have the duct on the through-hole side wall, the external inert gas pipeline is connected with metallic bellows inside.
The external inert gas pipeline is provided with the device of control rare gas element break-make, preferably can also control the device of inert gas flow, is generally SV.
The pressure of the rare gas element that said entering metallic bellows is inner is not less than the pressure that reactant gases gets into metallic bellows.
The duct of said connection external inert gas pipeline is positioned at the reaction chamber interior.
Antipollution method based on said system: reactant gases will feed reaction cavity when reacting, and rare gas element gets into metallic bellows through the duct on the through hole, control its pressure and be not less than the pressure that reactant gases gets into metallic bellows.
Said rare gas element gets into the break-make and the gas flow size of metallic bellows and regulates through SV.
Like this; When process gas reacts; The position of through hole forms the state of air seal; Owing to the gas flow vacuum extractor of technological reaction inside cavity,, also just can't deposit simultaneously simultaneously in metallic bellows inside so technological reaction gas can't enter into metallic bellows inside through through hole.
Because the metallic bellows internal space is limited, and the through hole is equipped with shield cap, and required nitrogen flow is very little, can ignore fully the influence of technology.
Anti-pollution system in the LPCVD technology that the utility model provides; Through the gas circuit that gets into rare gas element is set on the through hole that passes at reaction chamber sidewall upper roller transmission shaft; Make reactant gases can't get into the method for metallic bellows, metallic bellows is protected during technological reaction completely, can realize metallic bellows work under complete clean environment; Thereby reach design service life, and then reduce production costs.
Description of drawings
Fig. 1 is traditional LPCVD technological reaction chamber and transmission structure synoptic diagram;
Fig. 2 is the single roller transmission structure of a traditional LPCVD technology synoptic diagram;
Fig. 3 is the shield cap synoptic diagram;
Fig. 4 is the structural representation of the utility model anti-pollution system.
Embodiment
Below in conjunction with accompanying drawing and embodiment the utility model is done further detailed explanation.
Anti-pollution system in a kind of LPCVD technology; As shown in Figure 4; Comprise be located at be used on the roller transmission shaft 13 to realize roller shaft to the metallic bellows 3 of stretching motion function be positioned at the through hole 8 that makes roller transmission shaft 13 be able to pass on the reaction chamber sidewall, be provided with near reaction chamber inside one side on the through hole 8 and prevent that reactant gases from flowing into the shield cap 9 of metallic bellows 3; Have duct 12 on through hole 8 sidewalls, this duct 12 is positioned at the reaction chamber interior, and external inert gas pipeline 10 is connected with metallic bellows 3 inside.
External inert gas pipeline 10 is provided with the SV 11 of control rare gas element break-make and flow.
The pressure of the rare gas element of said entering metallic bellows 3 inside is not less than the pressure that reactant gases gets into metallic bellows 3.
Antipollution method based on this system: in non-process gas reaction times section, the SV 11 of being responsible for the break-make rare gas element is in off state always.When glass substrate arrives the work area; Reactant gases will feed reaction cavity when reacting; Computingmachine is given 11 1 instructions of SV simultaneously; SV 11 is opened, and rare gas element gets into metallic bellows 3 through the duct on the through hole 8 12, controls its pressure and is not less than the pressure that reactant gases gets into metallic bellows 3.
Like this; When process gas reacts; The position of through hole 8 forms the state of air seal; Owing to the gas flow vacuum extractor of technological reaction inside cavity,, also just can't deposit simultaneously simultaneously in metallic bellows 3 inside so technological reaction gas can't enter into metallic bellows 3 inside through through hole 8.
Claims (6)
1. the anti-pollution system in the LPCVD technology; Comprise be located at be used on the roller transmission shaft to realize roller shaft to the metallic bellows of stretching motion function be positioned at the through hole that makes the roller transmission shaft be able to pass on the reaction chamber sidewall; Be provided with the safety guard that prevents reactant gases inflow metallic bellows near reaction chamber inside one side on the through hole; It is characterized in that having the duct on the through-hole side wall, the external inert gas pipeline is connected with metallic bellows inside.
2. the anti-pollution system in the LPCVD technology according to claim 1 is characterized in that said external inert gas pipeline is provided with the device of control rare gas element break-make.
3. the anti-pollution system in the LPCVD technology according to claim 2, the device that it is characterized in that said control rare gas element break-make is the device of may command inert gas flow.
4. according to the anti-pollution system in claim 2 or the 3 described LPCVD technologies, it is characterized in that the device of said control rare gas element break-make and/or flow size is a SV.
5. the anti-pollution system in the LPCVD technology according to claim 1 is characterized in that the duct of said connection external inert gas pipeline is positioned at the reaction chamber interior.
6. the anti-pollution system in the LPCVD technology according to claim 1 is characterized in that said safety guard is a shield cap.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201120512974XU CN202380082U (en) | 2011-12-09 | 2011-12-09 | Anti-pollution system in LPCVD (Low Pressure Chemical Vapor Deposition) process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201120512974XU CN202380082U (en) | 2011-12-09 | 2011-12-09 | Anti-pollution system in LPCVD (Low Pressure Chemical Vapor Deposition) process |
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| Publication Number | Publication Date |
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| CN202380082U true CN202380082U (en) | 2012-08-15 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201120512974XU Expired - Fee Related CN202380082U (en) | 2011-12-09 | 2011-12-09 | Anti-pollution system in LPCVD (Low Pressure Chemical Vapor Deposition) process |
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| CN (1) | CN202380082U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102418083A (en) * | 2011-12-09 | 2012-04-18 | 汉能科技有限公司 | Pollution prevention system and method in LPCVD (low-pressure chemical vapor deposition) process |
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2011
- 2011-12-09 CN CN201120512974XU patent/CN202380082U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102418083A (en) * | 2011-12-09 | 2012-04-18 | 汉能科技有限公司 | Pollution prevention system and method in LPCVD (low-pressure chemical vapor deposition) process |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee |
Owner name: HANERGY SOLAR PHOTOVOLTAIC TECHNOLOGY LIMITED Free format text: FORMER NAME: HANERGY TECHNOLOGY CO., LTD. |
|
| CP03 | Change of name, title or address |
Address after: 100107 Beijing Chaoyang District Anli Road No. 0-A Patentee after: Hanenergy Solar Photovoltaic Technology Co.,Ltd Address before: 102209 Beijing city Changping District town Beiqijia Hongfu Pioneer Park No. 15 hospital Patentee before: Hanergy Technology Co., Ltd. |
|
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120815 Termination date: 20171209 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |