CN202380078U - 一种lpcvd工艺中的冷却腔传输系统 - Google Patents
一种lpcvd工艺中的冷却腔传输系统 Download PDFInfo
- Publication number
- CN202380078U CN202380078U CN2011205352047U CN201120535204U CN202380078U CN 202380078 U CN202380078 U CN 202380078U CN 2011205352047 U CN2011205352047 U CN 2011205352047U CN 201120535204 U CN201120535204 U CN 201120535204U CN 202380078 U CN202380078 U CN 202380078U
- Authority
- CN
- China
- Prior art keywords
- cooling chamber
- feed belt
- glass
- lpcvd
- transmission system
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000001816 cooling Methods 0.000 title claims abstract description 32
- 238000004518 low pressure chemical vapour deposition Methods 0.000 title claims abstract description 22
- 238000000034 method Methods 0.000 title abstract description 16
- 230000008569 process Effects 0.000 title abstract description 15
- 230000005540 biological transmission Effects 0.000 claims abstract description 33
- 238000005516 engineering process Methods 0.000 claims description 21
- 239000011521 glass Substances 0.000 abstract description 44
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 230000008859 change Effects 0.000 abstract description 2
- 238000012423 maintenance Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 description 12
- 239000010409 thin film Substances 0.000 description 7
- 230000001154 acute effect Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000013467 fragmentation Methods 0.000 description 2
- 238000006062 fragmentation reaction Methods 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000007665 sagging Methods 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000001149 thermolysis Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Landscapes
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims (9)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2011205352047U CN202380078U (zh) | 2011-12-20 | 2011-12-20 | 一种lpcvd工艺中的冷却腔传输系统 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2011205352047U CN202380078U (zh) | 2011-12-20 | 2011-12-20 | 一种lpcvd工艺中的冷却腔传输系统 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN202380078U true CN202380078U (zh) | 2012-08-15 |
Family
ID=46628595
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2011205352047U Expired - Lifetime CN202380078U (zh) | 2011-12-20 | 2011-12-20 | 一种lpcvd工艺中的冷却腔传输系统 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN202380078U (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102605343A (zh) * | 2011-12-20 | 2012-07-25 | 汉能科技有限公司 | 一种lpcvd工艺中的冷却腔传输系统 |
-
2011
- 2011-12-20 CN CN2011205352047U patent/CN202380078U/zh not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102605343A (zh) * | 2011-12-20 | 2012-07-25 | 汉能科技有限公司 | 一种lpcvd工艺中的冷却腔传输系统 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN103094403B (zh) | Pecvd法制备双面异质结太阳能电池的串行式设备和工艺 | |
CA2716627A1 (en) | Process for making solar cells | |
CN102856174B (zh) | 氮化硅的膜制备方法、具有氮化硅膜的太阳能电池片及其制备方法 | |
CN107794510B (zh) | 柔性薄膜立式真空镀膜生产线 | |
CN101582466A (zh) | 一种多晶硅薄膜太阳能电池 | |
CN103325879B (zh) | 高效三叠层异质结薄膜太阳能电池及其制备方法 | |
US20170155005A1 (en) | Selenization/sulfurization process apparatus for use with single-piece glass substrate | |
CN202481732U (zh) | 一种外传输校正系统 | |
CN202380078U (zh) | 一种lpcvd工艺中的冷却腔传输系统 | |
US20090266704A1 (en) | Sputtering Method and Sputtering Apparatus, and Electronic Device Manufacturing Method | |
CN102605343A (zh) | 一种lpcvd工艺中的冷却腔传输系统 | |
CN102605348A (zh) | 一种传动加热系统及方法 | |
CN101235475A (zh) | 一种铜铟硫化合物薄膜的制备方法 | |
CN103137765A (zh) | 一种铝诱导晶化多晶硅薄膜太阳能电池及制备方法 | |
CN206022406U (zh) | Cigs太阳能电池薄膜生产线 | |
CN106711288B (zh) | 一种纳米晶硅薄膜太阳能电池的制备方法 | |
CN102517564A (zh) | 一种lpcvd工艺腔中的气体吹扫系统及方法 | |
CN202380085U (zh) | 一种lpcvd工艺腔中的气体吹扫系统 | |
CN102064236B (zh) | 薄膜太阳能电池的制造方法 | |
CN103094402A (zh) | Pecvd法制备双面异质结太阳能电池的团簇式设备和工艺 | |
CN201990728U (zh) | 低压化学气相沉积反应设备 | |
CN202380086U (zh) | 一种传动加热系统 | |
CN104051577A (zh) | 提高太阳电池吸收层铜锌锡硫薄膜结晶性能的制备方法 | |
CN103280466A (zh) | 基于AlOx/Ag/ZnO结构的高反射高绒度背电极 | |
CN102418083A (zh) | 一种lpcvd工艺中的防污染系统及方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: HANERGY NEW MATERIALS TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: HANERGY TECHNOLOGY CO., LTD. Effective date: 20130116 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 102209 CHANGPING, BEIJING TO: 100107 CHAOYANG, BEIJING |
|
TR01 | Transfer of patent right |
Effective date of registration: 20130116 Address after: 100107 Beijing Chaoyang District Anli Road No. 0-A North East Gate of the Olympic Forest Park Patentee after: Hanergy New materials Technology Co., Ltd. Address before: 102209 Beijing city Changping District town Beiqijia Hongfu Pioneer Park No. 15 hospital Patentee before: Hanergy Technology Co., Ltd. |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20170829 Address after: 100101, No. 14, building 1, 7, 101, 0801, 3, building 8, building No. 2, West Beichen Road, Chaoyang District, Beijing Patentee after: Chinese LIAN mobile energy investment Limited Address before: 100107 Beijing Chaoyang District Anli Road No. 0-A North East Gate of the Olympic Forest Park Patentee before: Hanergy New materials Technology Co., Ltd. |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20190212 Address after: Room 103, Building 2, Office District, Olympic Village, Chaoyang District, Beijing Patentee after: HANNENG PHOTOVOLTAIC TECHNOLOGY CO., LTD. Address before: 100101 Beijing Chaoyang District Beichen West Road No. 8 Courtyard 3 Building 1 to 14 Floor 101, 7 Floor 0801 Patentee before: Chinese LIAN mobile energy investment Limited |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20190307 Address after: Room 107, Building 2, Olympic Village Street Comprehensive Office District, Chaoyang District, Beijing Patentee after: Han energy mobile Energy Holding Group Co., Ltd. Address before: Room 103, Building 2, Office District, Olympic Village, Chaoyang District, Beijing Patentee before: HANNENG PHOTOVOLTAIC TECHNOLOGY CO., LTD. |
|
CX01 | Expiry of patent term |
Granted publication date: 20120815 |
|
CX01 | Expiry of patent term |