CN202373575U - Radiating device for power semiconductor device - Google Patents
Radiating device for power semiconductor device Download PDFInfo
- Publication number
- CN202373575U CN202373575U CN 201120530328 CN201120530328U CN202373575U CN 202373575 U CN202373575 U CN 202373575U CN 201120530328 CN201120530328 CN 201120530328 CN 201120530328 U CN201120530328 U CN 201120530328U CN 202373575 U CN202373575 U CN 202373575U
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- CN
- China
- Prior art keywords
- power semiconductor
- fin
- pressing plate
- semiconductor device
- heat abstractor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Cooling Or The Like Of Electrical Apparatus (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The utility model discloses a radiating device for a power semiconductor device, and belongs to the field of industrial power supplies. In order to solve the technical problem, the utility model provides a radiating device which can save production cost and is used for a semiconductor device. The radiating device comprises a radiating fin (5), an insulating spacer (3) and a high-temperature resistant plastic pressing plate (1) which presses the primary power semiconductor device (4) and the insulating spacer (3) on the radiating fin (5), wherein the insulating spacer (3) bears the primary power semiconductor device (4) and is close to the radiating fin (5); and the high-temperature resistant plastic pressing plate (1) and the radiating fin (5) are integrated by a locking piece (2). By the radiating device, the material of the pressing plate is changed, and the number of the insulating spacer (3) on one side of the primary power semiconductor device (4) is reduced, namely the insulating spacer (3) is only arranged between the primary power semiconductor device (4) and the radiating fin, so that the total production cost of the radiating device is reduced.
Description
Technical field
The utility model belongs to the industrial power field, is specifically related to a kind of power semiconductor heat abstractor.
Background technology
From last century six the seventies to early eighties, power semiconductor mainly is silicon controlled rectifier (SCR), huge transistor (GTR) and grid cutoff thyristor (GTO) thereafter etc.Their main application is to be used for high voltage power transmission; And make motor speed control device that 380V or 220V alternating current with electrical network become various galvanic medium-and-large-sized power supply and the operation of control motor etc., these equipment nearly all are the forceful electric power devices relevant with electrical network.After the eighties in 20th century, earth-shaking variation has taken place in the power semiconductor industry.It is main that power semiconductor becomes with power metal oxide semiconductor field-effect transistor (power MOSFET often is abbreviated as MOS), igbt (IGBT) and power integrated circuit (power IC often is abbreviated as PIC).The main cause of this transformation is, these devices or integrated circuit can be than working under the high frequency more than 10 times in the past, and circuit can more energy-conservation, material-saving when high-frequency work, can significantly reduce equipment volume and weight.Especially (the power system on a chip of power system on the monolithic that integrated level is very high; Write a Chinese character in simplified form PSOC); It can be integrated in senser element and circuit, signal processing circuit, interface circuit, power device and circuit etc. on the silicon, and it is had according to load request fine adjustment output and the intelligent function protected according to situation oneselfs such as overheated, overvoltage, overcurrents.
In power circuit; Power semiconductor generally includes prime power semiconductor device and secondary power semiconductor; Be the reliable and stable work of guaranteed output semiconductor device; All need the design and installation heat abstractor that power semiconductor is dispelled the heat on the circuit board, heat abstractor comprises the structure of fin and constant power semiconductor device.Be the enhancing radiating efficiency, common shared same fin between the primary and secondary power semiconductor, and often fin and outer casing of power supply are linked, to accelerate the heat exchange between product inside and the environment.Because of the conductor effect of fin, the requirement that causes the safe distance between the primary and secondary power semiconductor not reach safety standard must solve through cushioning insulation spacer between prime power semiconductor device and fin.So, the prime power semiconductor device can't be fixed on the fin through traditional screw lock mode.Industry generally adopts screw lock mode fixed secondary power semiconductor, and secondary power semiconductor is provided with the hole, and screw passes this hole and is connected with screwed hole on the fin; Then adopt metal platen to fix for the prime power semiconductor device, but for reaching the safety standard requirements between primary and secondary power semiconductor, then must be between metal platen and prime power semiconductor device cushioning insulation spacer again.Therefore; Art methods promptly is to adopt metal platen successively with insulation spacer, prime power semiconductor device; And then be that insulation spacer is pressed on the fin, cause the heat abstractor manufacturing cost of this power semiconductor and Material Cost all obviously to raise thus.For addressing the above problem, the utility model provides a kind of heat abstractor of new power semiconductor.
The utility model content
The utility model technical problem to be solved provides a kind of semiconductor device heat abstractor that saves production cost.
The utility model solves the technical scheme that its technical problem adopted: the power semiconductor heat abstractor, comprise fin and insulation spacer, and said insulation spacer carries the prime power semiconductor device and near fin; Also comprise prime power semiconductor device and insulation spacer are pressed on the high-temperature resistance plastice pressing plate on the fin, the high-temperature resistance plastice pressing plate forms integral body through locking member and fin.
Wherein, the quantity of insulation spacer described in the said apparatus is a slice.
Wherein, the high-temperature resistance plastice pressing plate is the L type in the said apparatus, comprises support portion and compressed part, is provided with perforation near the place, support portion on the compressed part.
Further, said locking member is a screw.
Further, fin is provided with screwed hole, and the perforation that screw passes on the high-temperature resistance plastice pressing plate is connected with screwed hole on the fin.
Wherein, said apparatus also comprises secondary power semiconductor is fixed on the locking member on the fin.
Further, said locking member is a screw.
Further, the position away from insulation spacer on the fin is provided with screwed hole, and screw passes secondary power semiconductor and is connected with screwed hole.
Wherein, fin described in the said apparatus is the L type.
The beneficial effect of the utility model is: the utility model at first replaces to the high-temperature resistance plastice pressing plate with existing metal platen, is satisfying under the situation that pressing plate can bear uniform temperature the manufacturing processing cost of having practiced thrift cost of material and pressing plate.Because plastic presser plate has insulating properties; So the utility model has also reduced the insulation spacer of prime power semiconductor device one side on the basis of existing heat abstractor; Only need between prime power semiconductor device and fin, insulation spacer be set and get final product, reduce the cost of insulation spacer in the heat abstractor.The utility model power semiconductor heat abstractor has significantly reduced production cost on the quantity of the manufacturing processing of the raw material of accessory, accessory and accessory, have good application prospects.
Description of drawings
Fig. 1 is the structural representation of existing power semiconductor heat abstractor;
Fig. 2 is the structural representation of the utility model power semiconductor heat abstractor;
Fig. 3 is the utility model high-temperature resistance plastice pressing plate and locking member structural representation;
Fig. 4 is the high-temperature resistance plastice pressing plate and the locking member structural representation of another kind of execution mode.
Be labeled as among the figure: high-temperature resistance plastice pressing plate 1, support portion 11, compressed part 12, locking member 2, insulation spacer 3, prime power semiconductor device 4, fin 5, secondary power semiconductor 6, locking member 7, metal platen 8.
Embodiment
Below in conjunction with accompanying drawing the utility model is further specified.
The heat abstractor of power semiconductor of the prior art as shown in Figure 1; Because what it adopted is metal platen 8; Therefore; Cushioning insulation spacer 3 is all wanted in both sides at prime power semiconductor device 4, and not only the cost of material of metal platen 8 is high, processing cost is high, and has increased the consumption of insulation spacer 3.
Shown in Fig. 2 to 4, the utility model power semiconductor heat abstractor comprises fin 5 and insulation spacer 3, and said insulation spacer 3 carries prime power semiconductor device 4 and near fin 5; Comprise also prime power semiconductor device 4 and insulation spacer 3 are pressed on the high-temperature resistance plastice pressing plate 1 on the fin 5 that high-temperature resistance plastice pressing plate 1 forms whole through locking member 2 and fin 5.Through metal platen 8 is replaced to high-temperature resistance plastice pressing plate 1, satisfying under the situation that pressing plate can bear uniform temperature the manufacturing processing cost of having practiced thrift cost of material and pressing plate.Because high-temperature resistance plastice pressing plate 1 has insulating properties; So the utility model has also reduced the insulation spacer 3 of prime power semiconductor device 4 one sides on the basis of existing heat abstractor; Only need between prime power semiconductor device 4 and fin 5, insulation spacer 3 be set and get final product, reduce the cost of insulation spacer 3 in the heat abstractor.The utility model power semiconductor heat abstractor has significantly reduced production cost on the quantity of the manufacturing processing of the raw material of accessory, accessory and accessory.As long as the material of said high-temperature resistance plastice pressing plate 1 can be born the temperature that the heating of prime power semiconductor device 4 produces, like PA46.PA46 (nylon 46) is a kind of novel polyamide resin with high-melting-point and high-crystallinity.
Preferably, in order to save production cost, the quantity of said insulation spacer 3 is that a slice gets final product.
In the said apparatus; High-temperature resistance plastice pressing plate 1 can be for like the described U type of Fig. 4; The both sides that U is capable are fixed on high-temperature resistance plastice pressing plate 1 on the fin 5 with locking member 2, and the middle part of U type high-temperature resistance plastice pressing plate 1 can be pressed on prime power semiconductor device 4 and insulation spacer 3 on the fin 5.It will be understood by those skilled in the art that; Also can adopt the high-temperature resistance plastice pressing plate 1 of other shapes, it is preferred embodiment a kind of that the utility model provides, and promptly high-temperature resistance plastice pressing plate 1 is the L type; Comprise support portion 11 and compressed part 12, be provided with perforation near 11 places, support portion on the compressed part 12.
At high-temperature resistance plastice pressing plate 1 is the L type; Be provided with on the basis of perforation near 11 places, support portion on the compressed part 12; Locking member 2 can adopt small-sized bolt to be connected with fin 5, also can adopt screw or other modes to connect, and the preferred said locking member 2 of the utility model is a screw.
Further, fin 5 is provided with screwed hole, and the perforation that screw passes on the high-temperature resistance plastice pressing plate 1 is connected with screwed hole on the fin 5.
The utility model power semiconductor heat abstractor also comprises secondary power semiconductor 6 is fixed on the locking member 7 on the fin 5.Locking member 7 can be any fixed structure, as long as can secondary power semiconductor 6 be fixed on the fin 5, as adopting screw, bolt or even other interface arrangment etc.
Further, said locking member 7 is a screw.Existing secondary power semiconductor 6 is provided with perforation, and what the mode of employing screw can be convenient is fixed on secondary power semiconductor 6 on the fin 5.Further, adopt on the basis of screw at locking member 7, the position away from insulation spacer 3 on fin 5 is provided with screwed hole, and screw passes secondary power semiconductor 6 and can be connected with screwed hole easily.
Preferably, fin described in the utility model device 5 is the L type.L type fin 5 comprises two rectangular parts, and wherein one is used for fixing prime power semiconductor device 4, and another is used for fixing secondary power semiconductor 6.
Though the fin 5 of the same same employing metal of the utility model with prior art; But,, reach at the safe distance between the primary and secondary power semiconductor on the basis of safety standard requirements through changing the material of pressing plate; Thereby manufacturing processing cost and the cost that the quantity that reduced insulation spacer 3 has also reduced insulation spacer 3 of cost of material, the pressing plate of pressing plate have been reduced; Therefore, the utility model device has significantly reduced total production cost, has good application prospects.
Claims (9)
1. the power semiconductor heat abstractor comprises fin (5) and insulation spacer (3), it is characterized in that: said insulation spacer (3) carries prime power semiconductor device (4) and near fin (5); Comprise also prime power semiconductor device (4) and insulation spacer (3) are pressed on the high-temperature resistance plastice pressing plate (1) on the fin (5) that high-temperature resistance plastice pressing plate (1) forms whole through locking member (2) and fin (5).
2. power semiconductor heat abstractor according to claim 1 is characterized in that: the quantity of said insulation spacer (3) is a slice.
3. power semiconductor heat abstractor according to claim 1 and 2 is characterized in that: high-temperature resistance plastice pressing plate (1) is the L type, comprises support portion (11) and compressed part (12), and compressed part (12) goes up and locates to be provided with perforation near support portion (11).
4. power semiconductor heat abstractor according to claim 3 is characterized in that: said locking member (2) is a screw.
5. power semiconductor heat abstractor according to claim 4 is characterized in that: fin (5) is provided with screwed hole, and the perforation that screw passes on the high-temperature resistance plastice pressing plate (1) is connected with screwed hole on the fin (5).
6. power semiconductor heat abstractor according to claim 1 and 2 is characterized in that: also comprise secondary power semiconductor (6) is fixed on the locking member (7) on the fin (5).
7. power semiconductor heat abstractor according to claim 6 is characterized in that: said locking member (7) is a screw.
8. power semiconductor heat abstractor according to claim 7 is characterized in that: the position that fin (5) is gone up away from insulation spacer (3) is provided with screwed hole, and screw passes secondary power semiconductor (6) and is connected with screwed hole.
9. power semiconductor heat abstractor according to claim 1 and 2 is characterized in that: said fin (5) is the L type.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201120530328 CN202373575U (en) | 2011-12-16 | 2011-12-16 | Radiating device for power semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201120530328 CN202373575U (en) | 2011-12-16 | 2011-12-16 | Radiating device for power semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202373575U true CN202373575U (en) | 2012-08-08 |
Family
ID=46597269
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201120530328 Expired - Lifetime CN202373575U (en) | 2011-12-16 | 2011-12-16 | Radiating device for power semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202373575U (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103712171A (en) * | 2012-09-28 | 2014-04-09 | 海洋王（东莞）照明科技有限公司 | Rectifier support and illuminating equipment |
| CN104279436A (en) * | 2013-07-02 | 2015-01-14 | 海洋王（东莞）照明科技有限公司 | Lamp |
| CN107195588A (en) * | 2017-07-05 | 2017-09-22 | 赵西岭 | A kind of component for being used to fix transistor |
| CN107517560A (en) * | 2016-06-16 | 2017-12-26 | 上海安浦鸣志自动化设备有限公司 | A kind of fixing device of power tube |
| CN113727523A (en) * | 2021-08-27 | 2021-11-30 | 南京博兰得电子科技有限公司 | Semiconductor device fixing structure |
-
2011
- 2011-12-16 CN CN 201120530328 patent/CN202373575U/en not_active Expired - Lifetime
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103712171A (en) * | 2012-09-28 | 2014-04-09 | 海洋王（东莞）照明科技有限公司 | Rectifier support and illuminating equipment |
| CN103712171B (en) * | 2012-09-28 | 2018-04-20 | 海洋王（东莞）照明科技有限公司 | Rectifier bracket and lighting apparatus |
| CN104279436A (en) * | 2013-07-02 | 2015-01-14 | 海洋王（东莞）照明科技有限公司 | Lamp |
| CN104279436B (en) * | 2013-07-02 | 2018-05-08 | 海洋王（东莞）照明科技有限公司 | Lamps and lanterns |
| CN107517560A (en) * | 2016-06-16 | 2017-12-26 | 上海安浦鸣志自动化设备有限公司 | A kind of fixing device of power tube |
| CN107195588A (en) * | 2017-07-05 | 2017-09-22 | 赵西岭 | A kind of component for being used to fix transistor |
| CN113727523A (en) * | 2021-08-27 | 2021-11-30 | 南京博兰得电子科技有限公司 | Semiconductor device fixing structure |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20120808 |
|
| CX01 | Expiry of patent term |