CN202297853U - Low-energy-consumption thermal field for drawing monocrystalline silicon - Google Patents
Low-energy-consumption thermal field for drawing monocrystalline silicon Download PDFInfo
- Publication number
- CN202297853U CN202297853U CN2011204424033U CN201120442403U CN202297853U CN 202297853 U CN202297853 U CN 202297853U CN 2011204424033 U CN2011204424033 U CN 2011204424033U CN 201120442403 U CN201120442403 U CN 201120442403U CN 202297853 U CN202297853 U CN 202297853U
- Authority
- CN
- China
- Prior art keywords
- heat
- thermal field
- quartz crucible
- consumption
- energy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The utility model relates to the field of monocrystalline silicon production in a solar industry or semiconductor industry, and in particular relates to a low-energy-consumption thermal field for drawing monocrystalline silicon. The thermal field disclosed by the utility model comprises a heat preservation barrel, a heater, a quartz crucible, a support bowl, a support seat and a support rod, wherein the heat preservation barrel is arranged on the inner wall of a furnace body; the heater is arranged on the inner ring of the heat preservation barrel; the quartz crucible is arranged in the inner cavity of the heater; the support bowl coats the outside of the quartz crucible; the support seat is arranged at the bottom of the support bowl and is supported by the support rod; a heat screen is arranged on the upper part of the quartz crucible; the heat screen is divided into an inner heat screen and an outer heat screen; and an heat insulation layer with the thickness being 35-80mm is arranged between the inner heat screen and the outer heat screen. In the low-energy-consumption thermal field for drawing monocrystalline silicon, as the heat insulation layer is added between the inner heat screen and the outer heat screen, heat is effectively prevented from being transferred to an upper furnace cavity and a crystal from the heat screen and crystal drawing energy consumption is obviously reduced. By using the low-energy-consumption thermal field, crystal drawing speed is improved, finished product quality is improved, the service lives of the parts of the thermal field are prolonged, and cost is reduced.
Description
Technical field
The utility model relates to the silicon single-crystal of sun power industry or semicon industry and makes the field, relates in particular to a kind of less energy-consumption thermal field that is used for pulling monocrystal silicon.
Background technology
Two kinds of methods are generally adopted in the manufacturing of sun power crystalline silicon at present: 1) the pulling of crystals method is called Czochralski method (Czochralski) and 2 again) the polycrystalline ingot casting method.Wherein pulling of crystals is owing to having eliminated the negative impact to the solar cell effciency of energy transfer of crystal boundary and crystal boundary impurity.Thereby the effciency of energy transfer of the solar cell made from monocrystalline is higher more than 2% than polycrystalline solar cell.
The characteristics of pulling of crystals method are in the hot system of a straight barrel type, to heat with graphite resistance, with the polycrystalline silicon raw material fusing that is contained in the high-purity silica pot, then seed crystal are inserted bath surface and carry out welding; Rotate seed crystal and backward rotation crucible simultaneously, seed crystal slowly upwards promotes, through seeding; Shouldering is changeed shoulder, isodiametric growth; Processes such as ending, a single crystal silicon has just drawn.Pulling monocrystal be one time-consuming, the process of power consumption. at present the manufacturing expense of silicon single crystal accounts for the 40-50% of whole solar cell manufacturing cost.
The thermal field of single crystal growing furnace generally includes well heater, side heat-preservation cylinder, following heat-preservation cylinder, heat shielding (guide shell), insulation cover, quartz crucible, crucible tray, pressure pin, compositions such as electrode.
Well heater is one of important components in the thermal field, and it is to be processed by the high purity graphite that the hip moulding method is produced, and is shaped as two semicircular cylinders, and the distinguish that vertically cracks forms series resistance, forms the SP loop after two groups of parallel connections.The graphite tray is used for supporting quartz crucible, divides two lobes or three lobe crucibles, and pressure pin and bracket have been formed the supporter of tray jointly.On, following heat-preservation cylinder forms with soft carbon felt parcel usually.This kind method insulation effect is general, usually loss heat energy.
The at present domestic thermal field that generally uses is main with the thermal field of 20 inches and 22 inches.Drawing 6.5 inches crystal with 22 inches thermal fields is example, the average isometrical power of present domestic crystal pulling usually between 50-70kW, power consumption, consuming time, cost is high.
The utility model content
The technical problem that the utility model will solve is: to present monocrystalline manufacturing power consumption, consuming time, technical problem that cost is high, the utility model provides a kind of less energy-consumption thermal field that is used for pulling monocrystal silicon.
The utility model solves the technical scheme that its technical problem adopted: a kind of less energy-consumption thermal field that is used for pulling monocrystal silicon; Comprise the heat-preservation cylinder that is arranged on the inboard wall of furnace body place, well heater, quartz crucible, tray, bracket and pressure pin, well heater are arranged on the inner ring of heat-preservation cylinder; Quartz crucible is arranged on the inner chamber of well heater; The external packets of quartz crucible is covered with tray, and described bracket is installed in the bottom of tray and is supported by pressure pin, is provided with heat shielding on the top of quartz crucible; Described heat shielding is divided into internal heat shield and outer heat shielding, has the thermal insulation layer that thickness is 35～80mm between internal heat shield and the outer heat shielding.
In order further to improve heat insulation effect, intercept heat is transmitted to furnace chamber top, and thermal insulation layer has been set up on said heat shielding top.
In order to improve pulling rate, said internal heat shield is inverted trapezoidal structure.
In order further to strengthen insulation effect, described thermal insulation layer is the thermal insulation layer of carbon fiber reinforced carbon-carbon composite.
The beneficial effect of the utility model is; The less energy-consumption thermal field that is used for pulling monocrystal silicon of the utility model is through setting up thermal insulation layer between inside and outside heat shielding, effectively stoped heat from heat shielding make progress furnace chamber and crystalline transmission, significantly reduced the crystal pulling energy consumption; The utility model can also improve pulling rate; Improve final product quality, prolong thermal field component work-ing life, reduce cost.
Description of drawings
Below in conjunction with accompanying drawing and embodiment the utility model is further specified.
Fig. 1 is the structural representation that the utility model is used for the optimum embodiment of less energy-consumption thermal field of pulling monocrystal silicon.
Among the figure: 1, heat-preservation cylinder, 2, quartz crucible, 3, tray, 4, bracket, 5, pressure pin, 6-1, internal heat shield, 6-2, outer heat shielding, 7, thermal insulation layer, 8, thermal insulation layer.
Embodiment
Combine accompanying drawing that the utility model is done further detailed explanation now.These accompanying drawings are the synoptic diagram of simplification, the substruction of the utility model only is described in a schematic way, so it only show the formation relevant with the utility model.
As shown in Figure 1, be the optimum embodiment of less energy-consumption thermal field that the utility model is used for pulling monocrystal silicon, comprise the heat-preservation cylinder 1 that is arranged on the inboard wall of furnace body place; Well heater, quartz crucible 2, tray 3, bracket 4 and pressure pin 5, well heater is arranged on the inner ring of heat-preservation cylinder 1, and quartz crucible 2 is arranged on the inner chamber of well heater; The external packets of quartz crucible 2 is covered with tray 3; Bracket 4 is installed in the bottom of tray 3 and is supported by pressure pin 5, is provided with heat shielding on the top of quartz crucible 2, and heat shielding is divided into internal heat shield 6-1 and outer heat shielding 6-2; Internal heat shield 6-1 is trapezoidal; Having thickness between internal heat shield 6-1 and the outer heat shielding 6-2 is the thermal insulation layer 7 of 35～80mm, and particularly, the thickness of thermal insulation layer 7 is 35mm, 60mm or 80mm preferably.Thermal insulation layer 7 has adopted carbon fiber reinforced carbon-carbon composite (CFC), and the thick curing carbon felt thermal insulation layer 8 of 80mm has also been set up on heat shielding top.To the insulation of whole hot system, adopted and solidified effective combination of carbon felt and soft carbon felt, thereby both effectively guaranteed heat insulation effect, be unlikely to increase significantly the thermal field cost again.
The crystal pulling test-results of the hot system of the utility model is following:
22 inches thermal fields are drawn 6.5 inches crystal, actual average isometrical power between 38-40KW, super low energy consumption.
Reasonably another benefit of bringing of thermal field design is, the raising of solid-liquid interface temperature, thus can realize the crystal pulling under the high pulling rate.The design of this thermal field can realize the above average isometrical pulling rate of 1.2mm/min (existing normal level is at 0.8-1.0mm/min), improves pulling rate, thereby shortens the production cycle, enhances productivity.
Because the reduction of crystal pulling power makes the temperature distribution of quartz crucible and melt interface more be tending towards rationally, this helps to suppress melt convection and the transmission of oxygen in melt, thereby reduces crystalline oxygen, and carbon content improves crystal quality and crystal forming rate.In addition; Some vital parts have adopted novel curing carbon felt and carbon fiber reinforced carbon-carbon composite (CFC), compare with soft carbon felt commonly used, and the volatile matter of this type material significantly reduces; Help reducing the pollution of thermal insulation material, improve crystal quality melt.
With above-mentioned desirable embodiment according to the utility model is enlightenment, and through above-mentioned description, the related work personnel can carry out various change and modification fully in the scope that does not depart from this utility model technological thought.The technical scope of this utility model is not limited to the content on the specification sheets, must confirm its technical scope according to the claim scope.
Claims (4)
1. less energy-consumption thermal field that is used for pulling monocrystal silicon; Comprise the heat-preservation cylinder (1) that is arranged on the inboard wall of furnace body place, well heater, quartz crucible (2), tray (3), bracket (4) and pressure pin (5), well heater is arranged on the inner ring of heat-preservation cylinder (1); Quartz crucible (2) is arranged on the inner chamber of well heater; The external packets of quartz crucible (2) is covered with tray (3), and described bracket (4) is installed in the bottom of tray (3) and is supported by pressure pin (5), and it is characterized in that: the top at quartz crucible (2) is provided with heat shielding; Described heat shielding is divided into internal heat shield (6-1) and outer heat shielding (6-2), has the thermal insulation layer that thickness is 35～80mm (7) between internal heat shield (6-1) and the outer heat shielding (6-2).
2. the less energy-consumption thermal field that is used for pulling monocrystal silicon as claimed in claim 1 is characterized in that: thermal insulation layer (8) has been set up on said heat shielding top.
3. the less energy-consumption thermal field that is used for pulling monocrystal silicon as claimed in claim 1 is characterized in that: said internal heat shield (6-1) is inverted trapezoidal structure.
4. the less energy-consumption thermal field that is used for pulling monocrystal silicon as claimed in claim 1 is characterized in that: described thermal insulation layer (7) is the thermal insulation layer (7) of carbon fiber reinforced carbon-carbon composite.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011204424033U CN202297853U (en) | 2011-11-10 | 2011-11-10 | Low-energy-consumption thermal field for drawing monocrystalline silicon |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011204424033U CN202297853U (en) | 2011-11-10 | 2011-11-10 | Low-energy-consumption thermal field for drawing monocrystalline silicon |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202297853U true CN202297853U (en) | 2012-07-04 |
Family
ID=46366787
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011204424033U Expired - Fee Related CN202297853U (en) | 2011-11-10 | 2011-11-10 | Low-energy-consumption thermal field for drawing monocrystalline silicon |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202297853U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114752994A (en) * | 2022-03-14 | 2022-07-15 | 中国恩菲工程技术有限公司 | Method and device for reducing crystal hidden crack of straightened silicon core rod |
-
2011
- 2011-11-10 CN CN2011204424033U patent/CN202297853U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114752994A (en) * | 2022-03-14 | 2022-07-15 | 中国恩菲工程技术有限公司 | Method and device for reducing crystal hidden crack of straightened silicon core rod |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101148777B (en) | Method and device for growing gallium-mixing silicon monocrystal by czochralski method | |
| CN202558970U (en) | Single crystal like silicon ingot furnace | |
| CN103469293B (en) | A kind of preparation method of polysilicon | |
| CN105442037A (en) | High-speed single crystal growth device | |
| CN204825129U (en) | Thermal field structure of high -efficient polycrystalline silicon ingot furnace | |
| CN202380122U (en) | Straight-pull silicon single crystal growth furnace continuously filled with silicon melt | |
| CN104372399A (en) | Single crystal silicon finishing method and single crystal silicon preparing method | |
| CN106894079A (en) | Monocrystal silicon grower | |
| CN103806101A (en) | Growth method and equipment of square sapphire crystal | |
| CN105568368A (en) | Thermal field and method for protecting thermal field component to reduce loss | |
| CN103451726A (en) | Water chilling ingot furnace and ingot casting process thereof | |
| CN102560631A (en) | Growth method and equipment of sapphire crystal | |
| CN108277531A (en) | The growing method of germanium single crystal | |
| CN102925971A (en) | High-efficiency polycrystal ingot casting thermal field | |
| CN102206855A (en) | Czochralski crystal grower graphite crucible | |
| CN202297853U (en) | Low-energy-consumption thermal field for drawing monocrystalline silicon | |
| CN106894082B (en) | Monocrystalline silicon growing furnace | |
| CN102363899A (en) | Quartz crucible used for continuous material charging | |
| CN102732943A (en) | Method for producing monocrystalline silicon cast ingot | |
| CN201634795U (en) | Czochralski crystal furnace graphite crucible | |
| CN205295534U (en) | High -speed growth of single crystal device | |
| CN201990762U (en) | Heating device of czochralski single crystal furnace | |
| CN110512280A (en) | A kind of device and method of EFG technique growth sealing sapphire pipe | |
| CN116065229A (en) | Drawing method of purification rod | |
| CN206902281U (en) | A kind of single crystal growing furnace |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120704 Termination date: 20151110 |
|
| EXPY | Termination of patent right or utility model |