CN202259196U - Removing device for silicon wafer edge oxidation films within various ranges - Google Patents

Removing device for silicon wafer edge oxidation films within various ranges Download PDF

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Publication number
CN202259196U
CN202259196U CN 201120354468 CN201120354468U CN202259196U CN 202259196 U CN202259196 U CN 202259196U CN 201120354468 CN201120354468 CN 201120354468 CN 201120354468 U CN201120354468 U CN 201120354468U CN 202259196 U CN202259196 U CN 202259196U
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CN
China
Prior art keywords
silicon chip
air bag
inflatable air
bag ring
circle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CN 201120354468
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Chinese (zh)
Inventor
李耀东
刘佐星
孙洪波
王海涛
冯丽
徐继平
张果虎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Youyan semiconductor silicon materials Co.,Ltd.
Original Assignee
Grinm Semiconductor Materials Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
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Priority to CN 201120354468 priority Critical patent/CN202259196U/en
Application granted granted Critical
Publication of CN202259196U publication Critical patent/CN202259196U/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Abstract

The utility model discloses a removing device for silicon wafer edge oxidation films within various ranges. The removing device comprises a hydrofluoric acid vapor generation tank, a tank cover, a sucker and an inflatable air bag ring, wherein the sucker is arranged at the center of the tank cover and is hermetically connected in a contact manner; and the inflatable air bag ring is bonded to the bottom of the tank cover, and the external form of the inflatable air bag ring is similar to that of a silicon chip to be processed. The dimension of the center of the inflatable air bag ring is 1 to 5 mm smaller than the dimension of the silicon chip to be processed. A seal ring is arranged on the circumference of the tank cover; and a layer of grease or wax, which is insoluble in hydrofluoric acid, is coated on the outer surface of the inflatable air bag ring. The contact area of the inflatable air bag ring and the silicon chip can be controlled by controlling the amount of air inside the inflatable air bag ring and the relative position of the inflatable air bag ring and the silicon chip, so that the removing of silicon chip edge oxidation films within various ranges can be achieved, the operation is convenient, and the popularization and the use are convenient.

Description

The multiple scope removal device of silicon chip edge oxide-film
Technical field
The utility model relates to a kind of removal device of silicon chip surface silicon dioxide film, relates in particular to the multiple scope removal device of a kind of silicon chip edge oxide-film.
Background technology
Epitaxial silicon chip is one of important foundation material of producing integrated circuit, and in recent years, market is increasing to the demand of epitaxial silicon chip, and the used silicon substrate demand of corresponding production epitaxial silicon chip is also increasing.For preventing that substrate slice from adding diffusion of impurities and autodoping in man-hour carrying out extension, the back side of the substrate layer of silicon dioxide film of growing is usually protected.Usually substrate slice is when the growthing silica film; The edge of substrate slice and front all maybe be with silicon dioxide films on the duration; For the ease of following process; The positive requirement usually of substrate slice removed silicon dioxide film, and for the edge silicon dioxide film, dissimilar substrates and different extension producers generally require the removal of the edge silicon dioxide oxide-film of different width dimensions.
The utility model content
The purpose of the utility model is to provide a kind of silicon chip edge oxide-film multiple scope removal device, and this removal device compact conformation is easy to operate, is convenient to promote the use of.
For realizing above-mentioned purpose, the utility model adopts following technical scheme:
The multiple scope removal device of a kind of silicon chip edge oxide-film, this device comprises hydrofluoric acid steam generating groove, groove lid, sucker and inflatable bladders circle, this sucker is located at the center of groove lid, and connects through contact seal; This inflatable bladders circle is bonded in the bottom of this groove lid, and its profile is similar to the shape of pending silicon chip.
The center size of said inflatable bladders circle is littler 1~5 millimeter than the overall dimension of pending silicon chip.
The periphery of said groove lid is provided with sealing ring.
The outer surface of said inflatable bladders circle scribbles grease or the wax that one deck is insoluble to hydrofluoric acid.
The advantage of the utility model is:
The utility model is through the relative position of what and inflatable bladders circle and silicon chip of the gas in the control inflatable bladders circle; Control the contact area of inflatable bladders circle and silicon chip; Thereby realize the removal of the multiple scope of silicon chip edge oxide-film, easy to operate, be convenient to promote the use of.
Description of drawings
Fig. 1 is the structural representation of the utility model.
Fig. 2 is the vertical view of the utility model.
Fig. 3 is the user mode figure of the utility model when removing silicon chip front and tow sides chamfering place silicon dioxide film.
Fig. 4 is the user mode figure of the utility model when only removing silicon chip front and positive surface chamfer place silicon dioxide film.
Embodiment
Like Fig. 1, shown in 2, the multiple scope removal device of a kind of silicon chip edge oxide-film, this device comprise hydrofluoric acid steam generating groove 1, groove lid 2, sucker 3 and inflatable bladders circle 4, and this sucker 3 is located at the center of groove lid 2, and connects through contact seal; This inflatable bladders circle 4 is bonded in the bottom of this groove lid 2, and its profile is similar to the shape of pending silicon chip 6.
The center size of said inflatable bladders circle 4 is littler 1~5 millimeter than the overall dimension of pending silicon chip.
The periphery of said groove lid 2 is provided with sealing ring 5.
The outer surface of said inflatable bladders circle scribbles grease or the wax that one deck is insoluble to hydrofluoric acid.
The utility model in use, the width of the silicon chip edge silicon dioxide film of removing at first as required charges into an amount of gas to inflatable bladders circle 4.As shown in Figure 3, when needs silicon chip front and tow sides chamfering place silicon dioxide film, need charge into more gas in the air bag circle.As shown in Figure 4, when only removing silicon chip front and positive surface chamfer place silicon dioxide film, air bag need charge into less gas.
With location notch or other positioner silicon chip is located earlier then, shifting chute lid 2 and sucker 3 are aimed at oriented silicon chip with sucker 3 and are picked up again.
After silicon chip touched the air bag circle, to the position of adjusted sucker and silicon chip, the silicon chip width of reserving until the air bag outer ring was removed the width of silicon dioxide film for preparation through further.The distortion of silicon chip compression bladder, the air bag of distortion plays a protective role to the silicon chip silicon dioxide film of contact and air bag inner ring.
There are sucker, hydrofluoric acid groove lid and the air bag circle of silicon chip to move on the hydrofluoric acid groove simultaneously suction; Behind the sealing ring and the sealing of hydrofluoric acid cell body through hydrofluoric acid groove lid periphery; Place a period of time; In order to accelerate the evaporation of hydrofluoric acid gas, can in hydrofluoric acid groove, add agitating device or directly in groove, feed hydrofluoric acid gas.
After treating that hydrofluoric acid gas is removed silicon chip edge and positive silicon dioxide film, mention the hydrofluoric acid lid, take off silicon chip, edge silicon dioxide film removal work is accomplished.

Claims (4)

1. multiple scope removal device of silicon chip edge oxide-film, it is characterized in that: this device comprises hydrofluoric acid steam generating groove, groove lid, sucker and inflatable bladders circle, this sucker is located at the center of groove lid, and connects through contact seal; This inflatable bladders circle is bonded in the bottom of this groove lid, and its profile is similar to the shape of pending silicon chip.
2. the multiple scope removal device of silicon chip edge oxide-film according to claim 1 is characterized in that: the center size of said inflatable bladders circle is littler 1~5 millimeter than the overall dimension of pending silicon chip.
3. the multiple scope removal device of silicon chip edge oxide-film according to claim 1 is characterized in that: the periphery of said groove lid is provided with sealing ring.
4. according to the multiple scope removal device of each described silicon chip edge oxide-film of claim 1~3, it is characterized in that: the outer surface of said inflatable bladders circle scribbles grease or the wax that one deck is insoluble to hydrofluoric acid.
CN 201120354468 2011-09-21 2011-09-21 Removing device for silicon wafer edge oxidation films within various ranges Expired - Lifetime CN202259196U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 201120354468 CN202259196U (en) 2011-09-21 2011-09-21 Removing device for silicon wafer edge oxidation films within various ranges

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 201120354468 CN202259196U (en) 2011-09-21 2011-09-21 Removing device for silicon wafer edge oxidation films within various ranges

Publications (1)

Publication Number Publication Date
CN202259196U true CN202259196U (en) 2012-05-30

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN 201120354468 Expired - Lifetime CN202259196U (en) 2011-09-21 2011-09-21 Removing device for silicon wafer edge oxidation films within various ranges

Country Status (1)

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CN (1) CN202259196U (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111341704A (en) * 2020-05-20 2020-06-26 西安奕斯伟硅片技术有限公司 Edge removing device and edge removing method for silicon wafer back sealing layer
CN113889399A (en) * 2021-09-08 2022-01-04 上海中欣晶圆半导体科技有限公司 Liquid seepage prevention trimming process

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111341704A (en) * 2020-05-20 2020-06-26 西安奕斯伟硅片技术有限公司 Edge removing device and edge removing method for silicon wafer back sealing layer
CN113889399A (en) * 2021-09-08 2022-01-04 上海中欣晶圆半导体科技有限公司 Liquid seepage prevention trimming process

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Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
C56 Change in the name or address of the patentee

Owner name: GRINM ADVANCED MATERIALS CO., LTD.

Free format text: FORMER NAME: GRINM SEMICONDUCTOR MATERIALS CO., LTD.

CP01 Change in the name or title of a patent holder

Address after: 100088 Beijing city Xicheng District Xinjiekou Avenue No. 2

Patentee after: YOUYAN NEW MATERIAL CO., LTD.

Address before: 100088 Beijing city Xicheng District Xinjiekou Avenue No. 2

Patentee before: GRINM Semiconductor Materials Co., Ltd.

ASS Succession or assignment of patent right

Owner name: GRINM SEMICONDUCTOR MATERIALS CO., LTD.

Free format text: FORMER OWNER: GRINM ADVANCED MATERIALS CO., LTD.

Effective date: 20150612

C41 Transfer of patent application or patent right or utility model
TR01 Transfer of patent right

Effective date of registration: 20150612

Address after: 101300 Beijing city Shunyi District Shuanghe Linhe Industrial Development Zone on the south side of the road

Patentee after: You Yan Semi Materials Co., Ltd.

Address before: 100088 Beijing city Xicheng District Xinjiekou Avenue No. 2

Patentee before: YOUYAN NEW MATERIAL CO., LTD.

CP01 Change in the name or title of a patent holder
CP01 Change in the name or title of a patent holder

Address after: 101300 south side of Shuanghe Road, Linhe Industrial Development Zone, Shunyi District, Beijing

Patentee after: Youyan semiconductor silicon materials Co.,Ltd.

Address before: 101300 south side of Shuanghe Road, Linhe Industrial Development Zone, Shunyi District, Beijing

Patentee before: GRINM SEMICONDUCTOR MATERIALS Co.,Ltd.

CX01 Expiry of patent term
CX01 Expiry of patent term

Granted publication date: 20120530