CN202246854U - Novel plasma reinforced chemical vapor deposition vent hole device - Google Patents
Novel plasma reinforced chemical vapor deposition vent hole device Download PDFInfo
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- CN202246854U CN202246854U CN2011202915492U CN201120291549U CN202246854U CN 202246854 U CN202246854 U CN 202246854U CN 2011202915492 U CN2011202915492 U CN 2011202915492U CN 201120291549 U CN201120291549 U CN 201120291549U CN 202246854 U CN202246854 U CN 202246854U
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- vent hole
- novel plasma
- exhaust cap
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- chemical vapor
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Abstract
The utility model relates to a novel plasma reinforced chemical vapor deposition vent hole device, belonging to the filed of plasma coating, which comprises a vent cap, wherein the bottom of the vent cap is provided with an air inlet hole, and the wall body of the vent cap is provided with a plurality of through holes. According to the utility model, the problem that a vent hole is blocked during coating can be effectively reduced, so that the vent hole is not easy to block, further, the coating problem of equipment is reduced, but also the maintenance time of the equipment is reduced; and in addition, the design is simple, and the installation and the replacement are convenient.
Description
Technical field
The utility model relates to a kind of novel plasma and strengthens the chemical vapour deposition vent device, belongs to the plasma coating field.
Background technology
In the preparation process of crystal-silicon solar cell; Silicon nitride film plays passivation, antireflective, protection launch site to solar cell; Can improve the photogenerated current of solar cell; Reduce dark current simultaneously and pressure is opened in raising, so the silicon nitride film preparation section plays a part outbalance in solar cell technology.
The preparation method of silicon nitride film is a lot; Direct nitridation method is arranged; Sputtering method; Thermal decomposition method also can perhaps about 750 ℃, made with low-pressure chemical vapor phase deposition method (LPCVD) by normal pressure chemical vapour deposition (APCVD) under 700～1000 ℃, but industry is now gone up and the laboratory generally uses plasma enhanced chemical vapor deposition (PECVD) to generate silicon nitride film.Wherein, PECVD can be divided into direct type PECVD and indirect type PECVD again.Among the direct type PECVD, substrate is positioned on the electrode, directly contacts plasma body.Indirect type PECVD substrate is the contact and exciting electrode not.Direct type PECVD plated film efficient is higher, has obtained in recent years using widely.But direct type PECVD filming equipment needs often to safeguard, and the length direct relation of maintenance of the equipment time produce line can ordinary production, therefore, be necessary to shorten the maintenance time of equipment, improve the actual production time of equipment.
In direct type PECVD filming equipment maintenance process, the mediation of pore is often expended the long period, this mainly is owing to produce isoionic gas exhaust hole and in process of plating, be easy to block.The reason that pore stops up mainly can be divided into two types, i.e. the reason of the design reasons of equipment itself and equipment generation in service.On equipment design, because vent design is difficult for excessively during plated film, and venting port directly contacts with plasma body, and this caused at plated film after for some time, and silicon nitride film directly overlays and causes the pore obstruction on the spilehole, thereby influences coating quality.In addition, in equipment running process,, the substrate that comes off cause pore to stop up thereby covering venting hole easily.
Summary of the invention
For addressing the above problem, the utility model provides a kind of novel plasma that can effectively reduce venting hole blockage problem in the coating process to strengthen the chemical vapour deposition vent device.
For realizing above-mentioned purpose, the technical scheme that the utility model adopted is:
A kind of novel plasma strengthens the chemical vapour deposition vent device, comprises that the bottom has the exhaust cap of air inlet port, and the wall body of exhaust cap is provided with several through holes.
As the further setting of such scheme, the top of said exhaust cap is an enclosed construction.
Said exhaust cap is cylindrical, and air inlet port is arranged on the bottom surface of exhaust cap, and through hole is arranged on the side of exhaust cap.
Said through hole is a reticulated structure.
A kind of novel plasma of the utility model strengthens the chemical vapour deposition vent device; Be installed in detachable method on the venting hole of direct type PECVD filming equipment; Make air inlet port corresponding with venting hole; Gas gets in the exhaust cap through venting hole, air inlet port successively like this, discharges through the through hole of exhaust cap again.The utility model can effectively reduce venting hole blockage problem in the coating process, makes venting hole be difficult for stopping up, and not only helps the problem of equipment plated film, help simultaneously reducing the maintenance of the equipment time, and simplicity of design, be convenient to install and replacing.
Below in conjunction with accompanying drawing and embodiment the utility model is described further.
Description of drawings
Fig. 1 is the structural representation of the utility model;
Fig. 2 is the elevational schematic view of Fig. 1.
Embodiment
Like Fig. 1, shown in Figure 2, a kind of novel plasma of the utility model strengthens the chemical vapour deposition vent device, comprises that the bottom has the exhaust cap 2 of air inlet port 1, and the wall body of exhaust cap 2 is provided with several through holes 3, and through hole 3 is a reticulated structure.Exhaust cap 2 is cylindrical, and air inlet port 1 is arranged on the bottom surface of exhaust cap 2, and through hole 3 is arranged on the side of exhaust cap 2.The top of exhaust cap 2 is an enclosed construction.
The utility model has reduced the probability that venting hole contacts with plasma body, can slow down the blocked speed of venting hole, prolongs the normal duration of service of filming equipment, can prevent that foreign matter covers venting hole in the coating process simultaneously.
The foregoing description only be used to explain inventive concept of the utility model, but not to the qualification of the utility model rights protection allly utilizes this design that the utility model is carried out the change of unsubstantiality, all should fall into the protection domain of the utility model.
Claims (4)
1. a novel plasma strengthens the chemical vapour deposition vent device, it is characterized in that: comprise that the bottom has the exhaust cap of air inlet port, the wall body of exhaust cap is provided with several through holes.
2. a kind of novel plasma as claimed in claim 1 strengthens the chemical vapour deposition vent device, and it is characterized in that: the top of said exhaust cap is an enclosed construction.
3. a kind of novel plasma as claimed in claim 1 strengthens the chemical vapour deposition vent device, and it is characterized in that: said exhaust cap is cylindrical, and air inlet port is arranged on the bottom surface of exhaust cap, and through hole is arranged on the side of exhaust cap.
4. a kind of novel plasma as claimed in claim 1 strengthens the chemical vapour deposition vent device, and it is characterized in that: said through hole is a reticulated structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011202915492U CN202246854U (en) | 2011-08-12 | 2011-08-12 | Novel plasma reinforced chemical vapor deposition vent hole device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011202915492U CN202246854U (en) | 2011-08-12 | 2011-08-12 | Novel plasma reinforced chemical vapor deposition vent hole device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202246854U true CN202246854U (en) | 2012-05-30 |
Family
ID=46108124
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011202915492U Expired - Lifetime CN202246854U (en) | 2011-08-12 | 2011-08-12 | Novel plasma reinforced chemical vapor deposition vent hole device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202246854U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102978587A (en) * | 2012-12-12 | 2013-03-20 | 英利能源（中国）有限公司 | Novel flat type PECVD (Plasma Enhanced Chemical Vapor Deposition) equipment and gas channel connecting hole structure thereof |
| CN113818012A (en) * | 2021-11-25 | 2021-12-21 | 新美光(苏州)半导体科技有限公司 | Chemical vapor deposition device |
| CN114059043A (en) * | 2021-11-19 | 2022-02-18 | 新美光(苏州)半导体科技有限公司 | Air inlet mechanism and vapor deposition equipment |
-
2011
- 2011-08-12 CN CN2011202915492U patent/CN202246854U/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102978587A (en) * | 2012-12-12 | 2013-03-20 | 英利能源（中国）有限公司 | Novel flat type PECVD (Plasma Enhanced Chemical Vapor Deposition) equipment and gas channel connecting hole structure thereof |
| CN114059043A (en) * | 2021-11-19 | 2022-02-18 | 新美光(苏州)半导体科技有限公司 | Air inlet mechanism and vapor deposition equipment |
| CN114059043B (en) * | 2021-11-19 | 2023-10-03 | 新美光(苏州)半导体科技有限公司 | Air inlet mechanism and vapor deposition equipment |
| CN113818012A (en) * | 2021-11-25 | 2021-12-21 | 新美光(苏州)半导体科技有限公司 | Chemical vapor deposition device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20191219 Address after: 312000 No.22, Sanjiang East Road, Doumen street, Yuecheng District, Shaoxing City, Zhejiang Province Patentee after: Zhejiang sunflower Juhui New Energy Technology Co., Ltd Address before: 312071 Sanjiang road Zhejiang Shaoxing Paojiang Industrial Zone Patentee before: Zhejiang Sunflower Light Energy Science & Technology LLC. |
|
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20120530 |