CN113818012A

CN113818012A - Chemical vapor deposition device

Info

Publication number: CN113818012A
Application number: CN202111407947.0A
Authority: CN
Inventors: 不公告发明人
Original assignee: New Meguiar Suzhou Semiconductor Technology Co ltd
Current assignee: New Meguiar Suzhou Semiconductor Technology Co ltd
Priority date: 2021-11-25
Filing date: 2021-11-25
Publication date: 2021-12-21
Anticipated expiration: 2041-11-25
Also published as: CN113818012B

Abstract

The application discloses a chemical vapor deposition apparatus. The device comprises a furnace body, an air inlet, an air outlet and a flow guide device. The flow guiding device comprises at least one flow guiding plate. Each guide plate is provided with one or more through holes. When the number of the guide plates is two or more, orthographic projections of the central points of the through holes on the two adjacent guide plates on the same projection plane are not overlapped. The plane of the uppermost layer of the flow guide device is used for separating the first area and the second area inside the furnace body, the air inlet is communicated with the outside and the first area inside the furnace body, the air outlet is communicated with the outside and the second area inside the furnace body, and the flow guide device is arranged in the second area.

Description

Chemical vapor deposition device

Technical Field

The application relates to the technical field of vapor deposition, in particular to a chemical vapor deposition device with a flow guide device.

Background

As one of the widely used techniques in the semiconductor industry, Chemical Vapor Deposition (CVD) is a process in which a gas containing raw material components (also referred to as a precursor) is fed into a high-temperature Deposition furnace, and a solid film is deposited on a preform by diffusion and convection mechanisms to form a finished product.

In the existing high-temperature deposition furnace, a precursor is introduced into a reaction chamber, and after decomposition reaction deposition is carried out on the surface of a substrate material, the precursor is pumped out from an air outlet through an external vacuum pump, so that reaction byproducts are pumped out of the chamber, and a new precursor enters the chamber. However, such a gas inlet and outlet structure may cause uneven distribution of the precursor and other reaction gases in the chamber, and the flow path may be mainly concentrated on the line from the gas inlet to the gas outlet, thereby causing uneven growth and deposition of the material inside the chamber, especially when multiple pieces or large-sized silicon carbide materials are grown. In addition, when a plurality of pieces or large-sized thin film materials such as silicon carbide (SiC) materials are grown, since the size of the chamber is large, the distance between the gas inlet and the gas outlet is long, and the process cycle is long, some solid byproducts in the gas phase are easily attached to the gas outlet. In the past, the low exhaust efficiency of equipment or the blockage of an exhaust port are easily caused, and the influence on the process and the equipment is caused.

Disclosure of Invention

The technical problem to be solved by the embodiments of the present application is that the gas distribution in the deposition furnace is not uniform, and simultaneously, the solid byproducts generated in the reaction are easily attached to the exhaust port to cause low exhaust efficiency or block the exhaust port.

In order to solve the technical problem, the application provides a chemical vapor deposition device with a flow guide device, which can uniformly disperse the flow path of gas in a furnace body, and simultaneously, enables solid byproducts to be deposited in advance, thereby avoiding blocking an exhaust port.

In order to achieve the above object, the present application discloses a chemical vapor deposition apparatus. The device comprises a furnace body, an air inlet, an air outlet and a flow guide device. The flow guiding device comprises at least one flow guiding plate. Each guide plate is provided with one or more through holes. When the number of the guide plates is two or more, orthographic projections of the central points of the through holes on the two adjacent guide plates on the same projection plane are not overlapped. The plane of the uppermost layer of the flow guide device is used for separating the first area and the second area inside the furnace body, the air inlet is communicated with the outside and the first area inside the furnace body, the air outlet is communicated with the outside and the second area inside the furnace body, and the flow guide device is arranged in the second area.

In one possible implementation, when the number of the baffles is two or more, each of the two or more baffles is arranged in parallel, and the central points are on the same straight line.

In one possible implementation, a center point of each of the two or more baffles is on a centerline of the furnace body.

In one possible implementation, the two or more baffles are disks of equal diameter, the thickness of the disks is 2-3 cm, and the distance between two adjacent disks is 8-15 cm.

In a possible implementation manner, among the disks forming the two or more flow guide plates, the through holes on the disks with odd numbers in the vertical direction from top to bottom are arranged in the same manner, and the through holes on the disks with even numbers in the vertical direction from top to bottom are arranged in the same manner.

In a feasible implementation manner, a first circular through hole concentric with the circle center of the odd-numbered disc is formed in the odd-numbered disc, a plurality of second circular through holes are formed around the first circular through hole, and a first distance between the circle centers of the plurality of second circular through holes and the circle center of the disc is the same.

In a feasible implementation manner, a plurality of third circular through holes are formed in the disks with even numbers around the center of the disk, and a second distance between the centers of the third circular through holes and the center of the disk is the same.

In a possible implementation manner, two or more supporting pieces are arranged inside the furnace body, and the supporting pieces are used for supporting the flow guide device.

In a feasible implementation manner, a mounting part is arranged at the bottom of the flow guide device, a clamping seat is arranged inside the furnace body, and the mounting part is matched and fixed with the clamping seat so that the flow guide device is mounted inside the furnace body.

In one possible implementation, the mounting member is a cylinder, and the clamping seat is a hollow cylinder; the diameter of the mounting piece is the same as the inner diameter of the clamping seat, and the height of the mounting piece is consistent with that of the clamping seat; the outer diameter of the clamping seat is 2-3 times of the inner diameter.

In one possible implementation, the flow guiding device further includes a substrate. The at least one guide plate is arranged on the substrate and is parallel to the substrate. And the central point of each guide plate in the at least one guide plate and the central point of the substrate are positioned on the same straight line.

In one possible implementation manner, the center point of each of the at least one baffle and the center point of the substrate are located on the center line of the furnace body.

In one possible implementation manner, the base plate and the at least one guide plate are disks with equal diameters, the thickness of each disk is 2-3 cm, and the distance between every two adjacent disks is 8-15 cm.

In a possible implementation manner, two or more supporting pieces are arranged inside the furnace body, and the supporting pieces are used for supporting the base plate of the flow guide device.

In a feasible implementation manner, a mounting part is arranged at the bottom of a substrate of the flow guide device, a clamping seat is arranged inside the furnace body, and the mounting part is matched and fixed with the clamping seat so that the flow guide device is mounted inside the furnace body.

The application has the following beneficial effects: the special through hole design of the flow guiding device can optimize the airflow flow path inside the furnace body, so that the reaction gas can be uniformly dispersed, the deposition efficiency is improved, and the yield is improved. Meanwhile, the flow guide device is positioned at the front end of the exhaust port, reaction byproducts can be deposited in advance, and the risk of exhaust port blockage caused by deposition of the byproducts at the exhaust port is reduced.

Drawings

The present application will be further explained by way of exemplary embodiments, which will be described in detail by way of the accompanying drawings. These embodiments are not intended to be limiting, and in these embodiments like numerals are used to indicate like structures, wherein:

FIG. 1 is an exemplary schematic structural view of a flow directing device according to some embodiments of the present application;

FIG. 2 is an exemplary structural schematic of a connector according to some embodiments of the present application;

FIG. 3 is an exemplary structural schematic of a baffle according to some embodiments of the present application;

FIG. 4 is a schematic diagram of an exemplary configuration of a chemical vapor deposition apparatus according to some embodiments of the present application;

figure 5 is an exemplary structural schematic of a mount and cartridge according to some embodiments of the present application;

FIG. 6 is a schematic gas flow diagram in a prior art chemical vapor deposition apparatus; and

FIG. 7 is a schematic view of gas flow in a chemical vapor deposition apparatus according to some embodiments of the present application.

Detailed Description

In order to make the aforementioned objects, features and advantages of the present application more comprehensible, embodiments accompanying the present application are described in detail below with reference to the accompanying drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present application. This application is capable of embodiments in many different forms than those described herein and that modifications may be made by one skilled in the art without departing from the spirit and scope of the application and it is therefore not intended to be limited to the specific embodiments disclosed below.

It will be understood that when an element is referred to as being "secured to" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "left," "right," and the like as used herein are for illustrative purposes only.

Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used herein, the term "and/or" and/or "includes any and all combinations of one or more of the associated listed items.

The application provides a flow guiding device for chemical vapor deposition. The flow guiding device comprises at least one flow guiding plate. The shape of the baffle may be arbitrary, for example, circular, square, triangular, or other irregular shapes. It may be made of a high temperature resistant material. Illustratively, the baffles may be made of silica, alumina-carbide, zirconia, graphite, carbon fiber, ceramics, composites, borides, carbides, nitrides, silicides, phosphides, sulfides of rare earth metals, and the like. In some embodiments, the baffles may be made of graphite or carbon-carbon composite.

In some embodiments, each baffle is provided with one or more through holes. The shape of the through-hole may be optional. The through holes can be circular through holes, oval through holes, regular-edge-shaped through holes, triangular through holes, polygonal through holes, spiral through holes or other irregular-shaped through holes. When only one through hole is arranged on the guide plate, the through hole can be a divergent spiral through hole and divergently spirals from the center of the guide plate to the edge of the guide plate. When the guide plate is provided with two or more through holes, the through holes can be uniformly distributed on the guide plate. For example, the through holes are distributed in an annular array, and the center of the annular array is coincident with the center of the deflector. The through holes may be identical or different in shape. It should be noted that the number and size of the through holes may be different according to different application scenarios. For example, the number and size of the through holes may be determined according to the size of the baffle. On the same guide plate, a large number of through holes with smaller sizes can be arranged, and a small number of through holes with larger sizes can also be arranged. The number and size of the through holes are not particularly limited in this application.

In some embodiments, when the number of baffles is two or more, each baffle is disposed in parallel. For example, a column may be vertically disposed on one of the flow guiding plates, and mounting holes may be disposed on the other flow guiding plates. The upright posts are sequentially clamped into the mounting holes of other guide plates to realize the parallel mounting between the guide plates. In some embodiments, a connecting piece is arranged on the lowest guide plate of the at least one guide plate, the connecting piece is perpendicular to the lowest guide plate, and the rest guide plates can be sequentially and parallelly arranged on the connecting piece, so that the guide plates are arranged in parallel. The connecting piece can be a body of revolution of equal height. Such as a constant diameter cylinder. The guide plate can be additionally provided with a mounting hole. The size of the mounting hole can be matched with the size of the connecting piece. By snapping the connectors into the mounting holes, the baffles can be mounted in parallel. The connectors may be symmetrically distributed about a center line of a baffle of the connector. In some embodiments, orthographic projections of the central points of the through holes on two adjacent guide plates on the same projection plane do not overlap. Assuming that the projection plane is a lower guide plate of two adjacent guide plates, the orthographic projection of the central point of the through hole of the lower guide plate on the projection plane is the central point. The orthographic projection of the central point of the through hole of the upper guide plate on the lower guide plate is not overlapped with the central point of the through hole of the lower guide plate. For example, if the through hole is a circular through hole, the orthographic projection of the circle center of the circular through hole of the upper-layer flow guide plate on the lower-layer flow guide plate can be located on the connecting line of the circle centers of two adjacent circular through holes on the lower-layer flow guide plate.

In some embodiments, the center point of each baffle in the flow directing device is on the same line. In some embodiments, the center point of each baffle of the flow directing device is on a line perpendicular to and passing through the center point of the lowermost baffle. For example, assuming the baffles are circular plates, the axial centers of each baffle will coincide.

In some embodiments, the two or more baffles may be disks of equal diameter. The thickness of the disc may be 2-3 cm. Alternatively or preferably, the thickness of the disc may be 2.1-2.9 cm. Alternatively or preferably, the thickness of the disc may be 2.2-2.8 cm. Alternatively or preferably, the thickness of the disc may be 2.3-2.7 cm. Alternatively or preferably, the thickness of the disc may be 2.4-2.6 cm. Alternatively or preferably, the thickness of the disc may be 2.5 cm. The distance between two adjacent discs may be 8-15 cm. Alternatively or preferably, the distance between two adjacent discs may be 9-14 cm. Alternatively or preferably, the distance between two adjacent discs may be 10-13 cm. Alternatively or preferably, the distance between two adjacent discs may be 11-12 cm.

In some embodiments, the disks of the two or more flow deflectors are provided with the same through holes in odd numbered disks from top to bottom in the vertical direction, and the same through holes in even numbered disks from top to bottom in the vertical direction. A first circular through hole concentric with the circle center of the disc with the odd serial number is formed in the disc with the odd serial number, a plurality of second circular through holes are formed around the first circular through hole, and the first distances between the circle centers of the second circular through holes and the circle center of the disc are the same. And a plurality of third circular through holes are formed in the disks with even serial numbers around the circle center of the disks, and the second distances between the circle centers of the third circular through holes and the circle center of the disk are the same.

In some embodiments, the flow directing device may further comprise a substrate. The substrate may be for carrying the at least one baffle. The base plate can be vertically provided with a connecting piece, and the at least one guide plate can be sequentially arranged on the connecting piece in a mode of being perpendicular to the straight line where the connecting piece is located. Thus, the at least one baffle is parallel to each other, and the baffle is parallel to the substrate. In some embodiments, the base plate is vertically provided with a connecting piece, and the guide plates can be sequentially and parallelly arranged on the connecting piece, so that the guide plates are arranged in parallel. The connecting piece can be a body of revolution of equal height. Such as a constant diameter cylinder. The guide plate can be additionally provided with a mounting hole. The size of the mounting hole can be matched with the size of the connecting piece. By snapping the connectors into the mounting holes, the baffles can be mounted in parallel. In some embodiments, the connectors may be symmetrically distributed about a centerline of the substrate.

In some embodiments, the substrate may be a disk of equal diameter to the baffle, may have the same thickness as the disk comprising the baffle, and may be 8-15 cm from the baffle it carries. When the guide plates are arranged on the base plate, the central point of the base plate and the central point of each guide plate are positioned on the same straight line. The center point of the substrate and the center point of each baffle are on a straight line perpendicular to the substrate and passing through the center point of the substrate. For example, assuming that the substrate and the baffle are both circular plates, the axis of the substrate and the axis of the baffle will coincide.

Some preferred embodiments of the present application are described below with reference to the accompanying drawings. It should be noted that the following description is for illustrative purposes and is not intended to limit the scope of the present application.

FIG. 1 is an exemplary schematic view of a flow directing device according to some embodiments of the present application. As shown in fig. 1, the flow directing device 100 may include a substrate 110 and flow directing plates 120-1, 120-2, and 120-3 (which may be collectively referred to herein as flow directing plates 120). The substrate 110 and the baffle 120 may be disks of equal diameter. The size of the diameter may vary depending on the actual application of the deflector device 100. For example, the installation position of the deflector 100 in the chemical vapor deposition apparatus varies. If the reaction chamber (or called deposition chamber) of the cvd apparatus has a hollow cylindrical structure, the diameters of the substrate 110 and the baffle plate 120 may be smaller than the inner diameter of the reaction chamber by 0.5 cm, 1 cm, 1.5 cm, 2 cm, etc. The substrate 110 and the baffle 120 may be made of graphite or carbon-carbon composite. The graphite and carbon-carbon composite material has excellent high-temperature performance and is suitable for high-temperature reaction conditions of chemical vapor deposition. Alternatively or preferably, the substrate 110 and the baffle 120 may be made of graphite.

The thickness of the disks comprising the substrate 110 and/or the baffle 120 may be 2-3 cm. Alternatively or preferably, the thickness of the disc may be 2.1-2.9 cm. Alternatively or preferably, the thickness of the disc may be 2.2-2.8 cm. Alternatively or preferably, the thickness of the disc may be 2.3-2.7 cm. Alternatively or preferably, the thickness of the disc may be 2.4-2.6 cm. Alternatively or preferably, the thickness of the disc may be 2.5 cm. The distance between two adjacent discs may be 8-15 cm. Alternatively or preferably, the distance between two adjacent discs may be 9-14 cm. Alternatively or preferably, the distance between two adjacent discs may be 10-13 cm. Alternatively or preferably, the distance between two adjacent discs may be 11-12 cm.

The through holes arranged on the disks forming the guide plate 120 (including the guide plates 120-1/120-2/120-3) are circular through holes. The diameter of the circular through hole may be 15-20% of the diameter of the disc. Alternatively or preferably, the diameter of the circular through hole may be 16-19% of the diameter of the disc. Alternatively or preferably, the diameter of the circular through hole may be 17-18% of the diameter of the disc.

Among the disks of the three guide plates (120-1/120-2/120-3) constituting the guide plate 120, the through holes of the disks with odd numbers in the vertical direction from top to bottom are arranged in the same way, and the through holes of the disks with even numbers in the vertical direction from top to bottom are arranged in the same way. As shown in FIG. 1, in the vertical direction shown by the arrow A in FIG. 1, the through holes on the disks (including the air deflectors 120-1 and 120-3) with odd numbers from top to bottom are opened in the same manner. The disk forming the guide plate 120-1 and the guide plate 120-3 can be provided with a first circular through hole concentric with the center of the disk. The diameter of the first circular through hole may be 15-20% of the diameter of the disc. Alternatively or preferably, the diameter of the first circular through hole may be 16-19% of the diameter of the disc. Alternatively or preferably, the diameter of the first circular through hole may be 17-18% of the diameter of the disc. The disks forming the baffles 120-1 and 120-3 may be formed with a plurality of second circular through holes around the first circular through hole. Similarly, the diameter of the second circular through hole may be 15% -20% of the diameter of the disc. Alternatively or preferably, the diameter of the second circular through hole may be 16-19% of the diameter of the disc. Alternatively or preferably, the diameter of the second circular through hole may be 17-18% of the diameter of the disc. The first distance between the circle centers of the second circular through holes and the circle center of the disc is the same. The first distance may be 1/5-1/3 of the diameter of the disc. Alternatively or preferably, the first distance may be 1/4-1/3 of the diameter of the disc. Alternatively or preferably, the first distance may be 1/3 the diameter of the disc.

With reference to fig. 3, fig. 3 is an exemplary schematic diagram of a baffle according to some embodiments of the present application. As shown in fig. 3, the base plate 110 and the baffles 120 (120-1/120-2/120-3) are disks, and the baffles 120-1 and 120-3 are odd numbered disks (No. 1 and No. 3) from top to bottom in the vertical direction, and the shapes of the disks are the same. A circular through hole (i.e., the first circular through hole) concentric with the center of the disk is formed in the center of the disk. Around the outside of this circular through-hole, another 7 circular through-holes (i.e. the above-mentioned second circular through-hole) were opened. The distance between the circle centers of the 7 circular through holes and the circle center of the disc is the same. That is, the centers of the 7 circular through holes are on a circle centered on the center of the circular disk.

As shown in fig. 1, in the vertical direction shown by the arrow a in fig. 1, the through holes on the disks (including the baffle 120-2) with even numbers from top to bottom are opened in the same manner. A plurality of third circular through holes may be formed around the center of the disk constituting the baffle 120-2. The diameter of the third circular through hole may be 15-20% of the diameter of the disc. Alternatively or preferably, the diameter of the third circular through hole may be 16-19% of the diameter of the disc. Alternatively or preferably, the diameter of the third circular through hole may be 17-18% of the diameter of the disc. The second distance between the circle centers of the third circular through holes and the circle center of the disc is the same. The second distance may be 1/5-1/3 of the diameter of the disc. Alternatively or preferably, the second distance may be 1/4-1/3 of the diameter of the disc. Alternatively or preferably, the second distance may be 1/3 the diameter of the disc.

With continued reference to fig. 3, the even numbered baffles in the vertical direction from top to bottom are baffles 120-2 (No. 2). The guide plate, other guide plates and the base plate are all round discs. Around the center of the disc, 7 circular through holes (i.e., the third circular through hole) are opened. The distance between the circle centers of the 7 circular through holes and the circle center of the disc is the same. That is, the centers of the 7 circular through holes are on a circle centered on the center of the circular disk. Only one even numbered baffle is shown in fig. 3 for ease of illustration, it being understood that the number of baffles may vary, as may the number of even numbered baffles 2, 3, 4, etc. When the number of the even numbered baffles is plural, the shapes of the baffles can be consistent.

Referring to fig. 1, after the baffles 120 (120-1/120-2/120-3) are all mounted on the substrate 110, the orthogonal projections of the circle centers of the circular through holes of the vertically upper baffle (e.g., the baffle 120-1) and the circle centers of the circular through holes of the adjacent lower baffle (e.g., the baffle 120-2) on the same projection plane (e.g., the plane on which the baffle 120-2 is located) do not overlap. The orthographic projection of the center of the circular through hole of the baffle 120-2 on the projection plane can be itself. The orthographic projection of the circle center of the circular through hole of the guide plate 120-1 on the projection plane is completely staggered with the circle center of the circular through hole of the guide plate 120-2. Meanwhile, the center point of the substrate (the center of the disk) and the center point of each guide plate (the center of the disk) are all on the same straight line, and the straight line can be the axes of the substrate and the guide plates. The axis of the substrate may be coincident with the axis of each of the deflectors.

The baffles 120 (120-1/120-2/120-3) may be mounted vertically parallel above the substrate 110 by connectors provided on the substrate 110. Referring to fig. 2, fig. 2 is an exemplary schematic view of a connector according to some embodiments of the present application. As shown in fig. 2, three connection members 130 (130-1/130-2/130-3) are vertically disposed on the base plate 110. The connecting member 130 may be a body of revolution of equal height. In particular, the body of revolution may be a cylinder of constant diameter. The guide plate 120 may be additionally provided with a mounting hole. The size of the mounting hole may match the size of the connector 130. The baffle 120 can be mounted over the substrate 110 by snapping the connector 130 into the mounting hole. The connecting members 130 may be symmetrically distributed around the axis of the substrate 110. For example, the substrates 110 may be bonded, welded, fastened, etc. or otherwise disposed symmetrically about the axis of the substrate 110. The distance from each connector to the center of the base plate 110 is 1/3-1/6 of the diameter of the base plate 110. Alternatively or preferably, the distance from each connector to the center of the base plate 110 is 1/4-1/6 of the diameter of the base plate 110. The distance from each connector to the center of the base plate 110 is 1/5-1/6 of the diameter of the base plate 110. The distance from each connector to the center of the base plate 110 is 1/6 times the diameter of the base plate 110. The diameter of each connector, which is a constant diameter cylinder, may be 1/6-1/12 of base plate 110. Alternatively or preferably, the diameter of each connector may be 1/7-1/11 of base plate 110. Alternatively or preferably, the diameter of each connector may be 1/8-1/10 of base plate 110.

The substrate 110 is not essential. The deflector device 100 may not include the substrate 110. The connection 130 may be disposed above the baffle 120-3 and the remaining baffles (including 120-1 and 120-2) may be disposed above the baffle 120-3 via the connection 130.

It should be noted that the above description is for illustrative purposes only and is not intended to limit the scope of the claims.

Other embodiments of the present application disclose a chemical vapor deposition apparatus. The device can include the furnace body and set up in the inside guiding device of furnace body. The flow guiding device may be the flow guiding device of the above description. In some embodiments, the flow guiding device may be disposed inside the furnace body. For example, after the top and bottom surfaces of the furnace body are defined, the flow guide device may be disposed in a space inside the furnace body near the bottom surface of the furnace body.

In some embodiments, when the number of the baffles is two or more, the center point of each baffle may be on the center line of the furnace body. The furnace body may be a cylinder having a regular shape, for example, a cylinder, a conical cylinder, a prismatic body, a truncated cylinder, or the like. The centerline may be the axis of the columns. The central point of the baffle may be located on the axis. In particular, when the baffle has a regular shape as well, for example, the baffle is a disk, the axis of the baffle may coincide with the axis of the furnace body.

When the flow guide device further comprises a base plate, the central point of the base plate and the central point of each of the at least one flow guide plate may be on the central line of the furnace body. In particular, when the furnace body has a regular shape, and the base plate and the guide plate also have a regular shape, the axis of the base plate and the axis of the guide plate may coincide with the axis of the furnace body.

In some embodiments, the deflector may define an interior of the furnace as a first zone and a second zone after installation. For example, the plane of the uppermost deflector of the deflector divides the interior of the furnace into two zones. The region not containing the flow guiding device may be the first region. The area in which the flow guiding device is located may be the second area. The gas inlet of the chemical vapor deposition device can penetrate through the outside and the first area in the furnace body. The exhaust port penetrates through the outside and the second area inside the furnace body. That is, the gas inlet may allow gas (e.g., reaction gas of a gas phase deposition reaction) to enter the first region inside the furnace from the outside. The exhaust port may allow gas inside the furnace body to pass from the second area to the outside. In some embodiments, the axis of the exhaust port is located between a base plate of the flow directing device and a flow directing plate adjacent to the base plate. Thus, the gas needs to pass through the diversion device before passing through the exhaust port to the outside.

In some embodiments, the furnace body may be a hollow cylinder, such as a cylinder or prism. In some embodiments, the furnace body may be a hollow cylinder. When the base plate and the guide plate of the guide device are composed of disks with equal diameters, the axis of the guide device can be superposed with the axis of the furnace body when the guide device is installed in the furnace body. The diameter of the disc may be slightly smaller than the inner diameter of the furnace body. For example, the diameter of the disk may be less than the inner diameter of the furnace by 1 cm, 2 cm, 4 cm, etc.

In some embodiments, two or more supports may be disposed inside the furnace body. For example, two or more supports are provided on the side wall inside the furnace body. The flow guide device can be arranged inside the furnace body through the support of the support piece. For example, the support member may be a partial ring or a protrusion having a width larger than a gap between a disc of the deflector and the inner wall of the furnace body so that the deflector can be supported to be placed inside the furnace body. In some embodiments, the two or more supports are at the same distance from the furnace interior floor. After the flow guide device is placed, the base plate of the flow guide device can be ensured to be parallel to the bottom surface inside the furnace body.

In some embodiments, the bottom of the deflector may be provided with a mounting. For example, the bottom of the lowermost baffle or base plate may be provided with a mounting. The furnace body can be internally provided with a clamping seat. The mounting piece can be matched and fixed with the clamping seat, so that the flow guide device is mounted inside the furnace body. For example, the mounting may be a projection such as a cylinder and the socket may be a recess such as a ring. The mounting piece can be clamped into the clamping seat, so that the flow guide device is mounted inside the furnace body. After the deflector is installed, the axis of the exhaust port may be located between the base plate of the deflector and the deflector adjacent to the base plate.

Referring to fig. 4, fig. 4 is an exemplary illustration of a chemical vapor deposition apparatus according to some embodiments of the present application. As shown in FIG. 4, the chemical vapor deposition apparatus 200 includes a furnace body 210, an inlet 220, an outlet 230, and a deflector 100. Each baffle of the baffle device 100 has a plurality of through holes 150. A mounting member 140 is provided under the substrate thereof. A clamping seat 240 is arranged on the bottom surface inside the furnace body. The deflector 100 can be mounted at the bottom of the furnace body 210 by the engagement of the mounting member 140 and the clamping member 240. Referring to fig. 5, fig. 5 is an exemplary schematic view of a mount and cartridge according to some embodiments of the present application. As shown in fig. 5, the mounting member 140 may be a cylinder, and the cartridge 240 may be a hollow cylinder. The diameter of the mounting member 140 is the same as the inner diameter of the cartridge 240 so that the mounting member 140 can be inserted into the cartridge 240. The outer diameter of the cartridge 240 may be 2-3 times its inner diameter. The heights of the mount 140 and the cartridge 240 may be uniform. Thus, after the mounting member 140 is clamped to the clamping seat 240, the base plate of the flow guiding device 100 and the inner bottom surface plane of the furnace body 210 can be ensured. The holder 240 may be disposed on the inner bottom surface of the furnace body 210 by means of, for example, bonding or welding, and the axis thereof may coincide with the axis of the furnace body 210.

It should be noted that, when the deflector 100 does not include the substrate 110, the mounting member 140 may be disposed at the bottom of the bottom deflector (the deflector 120-3), and the deflector 100 is disposed inside the furnace body 210 by engaging with the clamping seat 240.

Exemplary application scenarios of the chemical vapor deposition apparatus disclosed in the present application are as follows.

The chemical vapor deposition apparatus described above may be used in performing the preparation of silicon carbide (SiC) materials. The carrier gas may carry the precursor mixed with other reaction gases into the interior chamber of the furnace body 210 through the gas inlet 220. Wherein the carrier gas may be hydrogen, nitrogen, argon or other inert gas. The precursor can be methyltrichlorosilane and the reaction gas can be ammonia or nitrogen. Wherein the volume ratio of the carrier gas, the reaction gas and the methyltrichlorosilane can be 6-12: 3-6: 1. after the carrier gas carries the precursor and the reaction gas into the furnace body 210, the precursor methyltrichlorosilane is decomposed at a high temperature, and carbon and silicon atoms are finally deposited on a substrate (e.g., a graphite substrate) through a complex decomposition reaction process to prepare the silicon carbide material. The reaction temperature can be 1100 ℃ to 1500 ℃, which can be changed according to the actual requirement of the preparation material. Eventually, the reaction by-products, as well as unreacted carrier gas, precursor, and reaction gases, are exhausted from the exhaust port 230. The gas passes through the deflector 100 before exiting through the exhaust port 230. The gas passes through the through holes 150 of the respective baffles of the baffle device 100 in sequence, and is finally discharged from the gas outlet 230.

The furnace gas first needs to pass through the through holes of the baffle 120-1 in the baffle device 100, and when the gas passes through the baffle 120-1, the gas flow is blocked by the baffle 120-2 because the through holes of the baffle 120-2 and the baffle 120-1 are not corresponding. Therefore, the gas is temporarily retained between the flow guiding plate 120-1 and the flow guiding plate 120-2 and flows and mixes, so that the precursor and other gases in the furnace body 210 are uniformly dispersed through each through hole before passing through the through holes of the flow guiding plate 120-1, and the atmosphere in the furnace body 210 is more uniform. Similarly, when the gas flow passes through the flow guide plate 120-2 and is also blocked by the flow guide plate 120-3, the gas is further temporarily retained and flows and mixes, and finally flows to the exhaust port 210 through the through hole of the flow guide plate 120-3 and is blocked by the substrate 110. Above-mentioned process can let the gas in the furnace body evenly disperse before the discharge on the one hand, makes deposition process more even, avoids gaseous direct gas vent by the air inlet flow direction. On the other hand, the decomposition and reaction time of the precursor and other reaction gases in the chamber can be increased, and the yield can be increased. Finally, solid byproducts in the gas phase may be deposited on the flow guiding device 100 (e.g., on the substrate 110) in advance, thereby preventing the deposition and accumulation at the exhaust port 210 from causing the exhaust port to be blocked. In addition, the flow guide device 100 is made of graphite materials, replacement cost is low, disassembly and assembly are convenient, efficient replacement can be achieved when replacement is needed, and production efficiency is effectively improved.

The application scenario of the deflector device 100 will be further described with reference to fig. 6 and 7. Fig. 6 is a schematic gas flow diagram of a chemical vapor deposition apparatus according to the prior art, and fig. 7 is a schematic gas flow diagram of a chemical vapor deposition apparatus according to some embodiments of the present application. As shown in fig. 6, after entering the reaction chamber of the chemical vapor deposition apparatus from the gas inlet 610 for deposition reaction, the gas is exhausted from the gas outlet 620 by an external force, such as a vacuum pump. The flow path of the gas will be concentrated on the line of motion of the inlet 610 and outlet 620 as indicated by the arrows in fig. 6. In this case, the gas distribution in the reaction chamber is not uniform, and the deposition effect is likely to be deteriorated. Referring to fig. 7, in the chemical vapor deposition apparatus disclosed in the present application, after the gas enters the interior of the furnace body 210 from the gas inlet 210, the gas will first pass through the through holes 150 of the first layer of baffles due to the blocking of the flow guiding device 100. After passing through the first layer of baffles via the through holes 150, the gas flow path will be further distributed to the through holes on the second layer of baffles due to the barrier of the second layer of baffles. Followed by a third layer of baffles. Thus, the gas will stay in the furnace body 210 for a longer time and be dispersed more uniformly. Is beneficial to the deposition reaction.

The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as within the scope of the present disclosure as long as there is no contradiction between the combinations of the technical features.

The above-mentioned embodiments only express several embodiments of the present application, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the concept of the present application, which falls within the scope of protection of the present application. Therefore, the protection scope of the present patent shall be subject to the appended claims.

Claims

1. A chemical vapor deposition apparatus, comprising:

a furnace body;

an air inlet;

an exhaust port; and

a flow directing device comprising:

each guide plate is provided with one or more through holes;

when the number of the guide plates is two or more, orthographic projections of the central points of the through holes on the two adjacent guide plates on the same projection plane are not overlapped;

the guide device is arranged in the second area, the top guide plate of the guide device is located on the plane and is separated from the inside of the furnace body, the air inlet is communicated with the outside and the first area inside the furnace body, the air outlet is communicated with the outside and the second area inside the furnace body, and the guide device is arranged in the second area.

2. The chemical vapor deposition apparatus according to claim 1, wherein when the number of the baffles is two or more, each of the two or more baffles is arranged in parallel and the central points are on the same straight line.

3. The chemical vapor deposition apparatus of claim 2, wherein a center point of each of the two or more baffles is on a centerline of the furnace body.

4. The chemical vapor deposition apparatus of claim 1, wherein the two or more baffles are disks of equal diameter, the disks have a thickness of 2-3 cm, and a distance between two adjacent disks is 8-15 cm.

5. The chemical vapor deposition apparatus as claimed in claim 4, wherein the disks constituting the two or more guide plates have through holes opened in the same manner in odd-numbered disks and even-numbered disks from the top to the bottom in the vertical direction.

6. The chemical vapor deposition apparatus of claim 5, wherein the odd-numbered discs have a first circular through hole concentric with the center of the disc, and a plurality of second circular through holes are disposed around the first circular through hole, wherein a first distance between the center of each of the plurality of second circular through holes and the center of the disc is the same.

7. The chemical vapor deposition apparatus as claimed in claim 5, wherein a plurality of third circular through holes are formed on the even numbered discs around the center of the disc, and a second distance between the center of each of the third circular through holes and the center of the disc is the same.

8. The chemical vapor deposition apparatus according to claim 1, wherein two or more supports are provided inside the furnace body, and the supports are used for supporting the flow guide device.

9. The chemical vapor deposition apparatus according to claim 1, wherein a mounting member is disposed at a bottom of the flow guiding device, and a clamping seat is disposed inside the furnace body, and the mounting member is fixed to the clamping seat so that the flow guiding device is mounted inside the furnace body.

10. The chemical vapor deposition apparatus of claim 9, wherein the mounting member is a cylinder and the cartridge is a hollow cylinder; the diameter of the mounting piece is the same as the inner diameter of the clamping seat, and the height of the mounting piece is consistent with that of the clamping seat; the outer diameter of the clamping seat is 2-3 times of the inner diameter.