CN202229851U - Temperature detection circuit for submicron integrated circuit - Google Patents
Temperature detection circuit for submicron integrated circuit Download PDFInfo
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- CN202229851U CN202229851U CN2011203323035U CN201120332303U CN202229851U CN 202229851 U CN202229851 U CN 202229851U CN 2011203323035 U CN2011203323035 U CN 2011203323035U CN 201120332303 U CN201120332303 U CN 201120332303U CN 202229851 U CN202229851 U CN 202229851U
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Abstract
The utility model discloses a temperature detection circuit for a submicron integrated circuit, which comprises a first current source assembly connected with an emitting electrode of a triode, a second current source assembly which is synchronous to the first current source assembly in current output, a current mirror connected with a base electrode of the triode, a sampling detection unit connected with the base electrode and the emitting electrode of the triode, and a control feedback unit. The other end of the current mirror is connected with the second current source assembly to form an analog output end, the control feedback unit is provided with a first voltage acquisition module, a second voltage acquisition module and an operational amplifier, the first voltage acquisition module and the second voltage acquisition module are connected onto different output ends of the optional amplifier respectively, one of the input ends of the first voltage acquisition module and the second voltage acquisition module is connected with the analog output end continuously, and the output end of the operational amplifier is connected with the first current source assembly and the second current source assembly. The temperature detection circuit for the submicron integrated circuit avoids the shortcoming of inaccurate temperature detection caused by the too small beta value, and can greatly improve temperature measuring accuracy.
Description
Technical field
The utility model relates to the temperature detection field, relates to a kind of temperature sensing circuit that is used for the submicron order integrated circuit in particular.
Background technology
Temperature in the devices (hereinafter to be referred as device being tested DUT) such as test such as microprocessor, microcontroller, special IC and FPGA generally all is to realize through testing its built-in triode at present; Because the emitter E and the base stage B of built-in triode has the pin external interface among the device being tested DUT, so just can test out the temperature of chip internal through the characteristic of the voltage Vbe between emitter E and the base stage B, its concrete derivation is following:
ΔVbe=?Vbe1-Vbe2=η*(kT/?q)*ln(Ic1/Ic2)；
Wherein, Ic is the electric current that flows through transistor collector C, and Ic1 flows through collector and produces voltage Vbe1, and Ic2 flows through collector and produces voltage Vbe2;
T is a thermodynamics absolute temperature, and unit is K;
Q is the quantity of electric charge of electronics, q=1.6 * 10
19C is constant;
K is a Boltzmann constant, k=1.38 * 10
23J/K;
η is non-ideal factor, and is relevant with technology, is constant basically in case technology is confirmed the back, approximates 1, for easy, except special needs, in the following formula η is made as 1, do not occur η in the formula;
For easy, can establish Vt=kT/q; Therefore above-mentioned formula is abbreviated as: Δ Vbe=Vt* ln (Ic1/Ic2); Go out by the above derivation of equation: T=q* Δ Vbe/k/ln (Ic1/Ic2);
Thus, when Ic1/Ic2=constant D, T=q* Δ Vbe/k/lnD; In formula, q, k and lnD are constant, and promptly T and Δ Vbe are linear, measure after the value of Δ Vbe the value that can obtain T through computing (as setting suitable gain).In peripheral circuit, because the collector C of built-in triode does not draw, can't directly guarantee Ic1/Ic2=D from collector C end input specific currents, therefore how to guarantee that Ic1/Ic2=D is a difficult problem, also be one of factor that becomes thermometric error.
To this difficult problem; Traditional solution all is through producing different Ic electric currents to the different electric current I e of emitter E end input; Because Ic=Ie* β/(1+ β), β is the enlargement factor of triode, therefore controls Ie1/Ie2=D and just can realize Ic1/Ic2 ≈ D indirectly.
It should be noted that β is not a constant, its condition with triode work is relevant, and is relevant with the residing temperature of triode as relevant with Ie, Ic size, and is non-linear relation.
Formula T=q* Δ Vbe/k/ln (Ic1/Ic2) introduces the β factor and further is derived as:
When Ie1 flows through triode, produce Ic1=Ie1* β 1/ (1+ β 1), voltage is designated as Vbe1, Vbe1=Vt*lnIc1 between emitter E at this moment and the base stage B;
When Ie2 flows through triode, produce Ic2=Ie2* β 2/ (1+ β 2), voltage is designated as Vbe2 between emitter E at this moment and the base stage B; Vbe2=Vt*lnIc2;
Both voltage difference delta Vbe=Vt * ln (Ic2/Ic1)
Substitution Ic1=Ie1* β 1/ (1+ β 1), Ic2=Ie2* β 2/ (1+ β 2) obtains the result:
ΔVbe?=Vt*ln{(Ie2/Ie1)*[1+(β2-β1)/(β1+β1β2)]}
=Vt*ln{(Ie2/Ie1)*[1+Δβ/(β1+β1β2)]}
So, for micron order and the above technology of micron order, even if β is not a constant; But β is bigger, thus Δ β/(β 1+ β 1 β 2) and 1 than I very ignoring, so be constant D as long as guarantee Ie2/Ie1; Ic2/Ic1 promptly can approximate D, i.e. Δ Vbe ≈ kT/q * lnD;
Thereby derive T ≈ q* Δ Vbe/k/lnD, measure Δ Vbe in addition computing just can obtain measured temperature value T, comparatively accurate.
Please with reference to shown in Figure 1; It is for using the concrete testing circuit of above-mentioned detection scheme; Power supply I1 and power supply I2 that it has the sample detecting unit that is used for voltage between collection emitting utmost point E and the base stage B and is the parallel connection relation, power supply I2=(D-1) * I1, switch SW is then connected with power supply I2; Through the opening and closing of CS SW, thereby can supply with electric current to the emitter E of DUT with D times of gap.Concrete; When switch SW is broken off; The I1 electric current emitter E of flowing through is the Ie1 electric current, produces voltage between base stage B, the emitter E and is designated as Vbe1, by sample detecting unit sampling record Vbe1 (needing analog to digital conversion that the result is remained in the register under the situation mostly); When switch SW was connected, the I1+I2=D*I1 electric current emitter E of flowing through was the Ie2 electric current, be the Ie1 electric current D doubly, produce voltage between base stage B, the emitter E and be designated as Vbe2, by sample detecting unit sampling record Vbe2; Then twice record result subtracted each other, obtain Vbe2-Vbe1, multiply by suitable gain N again, and add side-play amount (being designated as Ti) and convert celsius temperature scale or Fahrenheit temperature value into, the output result by the sample detecting unit.
But; For submicron order technology, because β is less than 1, Δ β in the Δ Vbe formula/(β 1+ β 1 β 2) can not ignore; Because Δ β/(β 1+ β 1 β 2) is different under different I e electric current, the condition of different temperatures; Therefore Δ Vbe introduces nonlinearity erron, promptly makes above-mentioned concrete testing circuit realize that Ie2/Ie1=D can't be suitable for, and error is bigger.
In view of this, the inventor has this case to produce to the above-mentioned defective further investigation of submicron order technology triode when temperature detection then.
The utility model content
The purpose of the utility model is to provide a kind of temperature sensing circuit that is used for the submicron order integrated circuit, to solve the problem that exists error can't obtain the Current Temperatures exact value greatly in the prior art.
In order to reach above-mentioned purpose, the solution of the utility model is:
A kind of temperature sensing circuit that is used for the submicron order integrated circuit wherein, comprising:
The first current source assembly links to each other with the emitter of triode and can change the size of emitter injection current;
The second current source assembly, the electric current of output are synchronized with the first current source assembly;
Current mirror, input end links to each other with the base stage of triode, and output terminal links to each other with the output terminal of the second current source assembly and forms analog output;
The sample detecting unit is connected the base stage and the emitter two ends of triode and detects the voltage difference at its two ends;
The Control and Feedback unit; Have the first voltage acquisition module, second voltage acquisition module and the operational amplifier; The output terminal of this first voltage acquisition module is connected on the different input ends of operational amplifier with the output terminal of the second voltage acquisition module; The input end of this first voltage acquisition module and the second voltage acquisition module is then selected a ground and is undertaken in analog output, and the output terminal of this operational amplifier then links to each other with the second current source assembly with the first current source assembly.
Further; This first voltage acquisition module has first divider resistance, first CS, the 3rd CS and storage piezoelectricity to be held; This first divider resistance, one end can be undertaken in analog output through first CS; This first divider resistance is held then ground connection in addition, and this storage piezoelectricity holds the both sides that also are connected in parallel on first divider resistance with the 3rd CS serial connection, and this storage piezoelectricity holds voltage and the pressurize through breaking off the 3rd CS that can in time obtain first divider resistance; This storage piezoelectricity holds and links to each other with the negative input end of this operational amplifier, and this first divider resistance resistance is the fixedly multiple of the second divider resistance resistance; This second voltage acquisition module has second divider resistance and second CS; This second divider resistance, one end can be undertaken in analog output through second CS; This second divider resistance is held then ground connection in addition, and the positive input terminal of this operational amplifier is accepted the voltage of the second voltage acquisition module.
Further, also be provided with diode between this first divider resistance and second divider resistance and the earth, the positive pole of this diode links to each other with second divider resistance with first divider resistance, and the negative pole of this diode links to each other with the earth.
Further, this Control and Feedback unit also has the 3rd current source and the 4th CS, and the 3rd current source forms the loop through the 4th CS with second divider resistance.
Further; This first current source assembly has first current source and the PMOS pipe that is connected in parallel on first current source; This second current source assembly has second current source and the 2nd PMOS pipe that is connected in parallel on second current source, and the grid of PMOS pipe and the 2nd PMOS pipe interconnects and be connected together the output terminal of operational amplifier.
After adopting said structure; The temperature sensing circuit that is used for the submicron order integrated circuit that the utility model relates to; It is through the electric current of current mirror reproduction transistor base; And passing through the electric current that the second current source assembly reappears transistor emitter, two strands of electric currents are realized subtracting each other through circuit, so can the collector current that be positioned at the inner triode of device to be detected reappeared out fully; Then pass through the effect of the first voltage acquisition module, the second voltage acquisition module and operational amplifier in the Control and Feedback unit; And the ratio of twice collector current is a fixed value before and after making, twice voltage in front and back that collect through the controlling of sampling unit this moment can calculate the triode temperature inside.The utility model has been avoided making the inaccurate defective of temperature detection because of β value instability; But the direct electric current through the reproduction transistor collector and utilize the negative feedback of operational amplifier and regulate the first current source assembly and the second current source assembly automatically; So that the ratio of the twice transistor collector electric current in front and back is definite value; Like this substitution formula Δ Vbe=η * (kT/ q) * ln (Ic1/Ic2) can calculate the internal temperature of triode; The utility model can improve the temperature test precision greatly thus.
Description of drawings
Fig. 1 is the structural representation of conventional temperature testing circuit;
Fig. 2 is used for the physical circuit figure of the temperature sensing circuit preferred embodiment of submicron order integrated circuit for the utility model relates to;
Fig. 3 is the working timing figure of each CS among Fig. 2;
Fig. 4 to Fig. 6 is other enforcement structural representation of current mirror in the utility model.
Among the figure:
The first current source assembly, 1 second current source assembly 2
Control and Feedback unit 5 first voltage acquisition modules 51
The second voltage acquisition module 52.
Embodiment
In order further to explain the technical scheme of the utility model, come the utility model is set forth in detail through specific embodiment below.
As shown in Figure 2; It is a kind of preferred embodiment that is used for the temperature sensing circuit 100 of submicron order integrated circuit for the utility model relates to; It is used for device DUT to be detected is carried out temperature detection, comprises the first current source assembly 1, the second current source assembly 2, current mirror 3, sample detecting unit 4 and Control and Feedback unit 5.
This first current source assembly 1 links to each other with the emitter E of triode, and can change the size of emitter E injection current as required; The structure of this second current source assembly 2 is identical with the first current source assembly 1, and the electric current of these second current source assembly, 2 outputs also is synchronized with the first current source assembly 1 fully; Concrete; In the present embodiment; This first current source assembly 1 has the first current source I1 and the PMOS pipe M1 that is connected in parallel on the first current source I1; 2 corresponding the 2nd PMOS that have the second current source I2 and be connected in parallel on the second current source I2 of this second current source assembly manage M2, and the grid of PMOS pipe M1 and the 2nd PMOS pipe M2 interconnects;
This current mirror 3, input end links to each other with the base stage B of triode, and output terminal links to each other with the output terminal of the second current source assembly 2 and forms analog output, and this current mirror 3 plays the effect of the base stage B electric current of reproduction triode; Be to adopt the mode of two NMOS pipes (i.e. NMOS pipe M3 and the 2nd NMOS pipe M4) to realize that certainly at specific embodiment, the current mirror 3 that it can also adopt other structure specifically sees also Fig. 4 to shown in Figure 6, does not then describe one by one at this in the present embodiment; The electric current of this analog output output is the reproduction electric current of transistor collector C;
This sample detecting unit 4 is connected the base stage B and the emitter E two ends of triode and detects the voltage difference at its two ends; That uses in this sample detecting unit 4 and the conventional temperature testing circuit 100 is in full accord, is used to extract and write down the voltage difference at transistor base B and emitter E two ends, and it belongs to prior art, in this also not unnecessary description;
This Control and Feedback unit 5; Have the first voltage acquisition module 51, the second voltage acquisition module 52 and operational amplifier OP1; The output terminal of this first voltage acquisition module 51 is connected on the different input ends of operational amplifier OP1 with the output terminal of the second voltage acquisition module 52; The input end of this first voltage acquisition module 51 and the second voltage acquisition module 52 is then selected a ground and is undertaken in analog output, and the output terminal of this operational amplifier OP1 then links to each other with the second current source assembly 2 with the first current source assembly 1.In the present embodiment, the output terminal of this operational amplifier OP1 then all links to each other with the grid of the 2nd PMOS pipe M2 with PMOS pipe M1, thereby realizes the synchro control to the first current source assembly 1 and the second current source assembly 2.
Like this; The utility model is through the electric current of current mirror 3 reproduction transistor base B; And passing through the electric current that the second current source assembly 2 reappears transistor emitter E, the collector C electric current that so can will be positioned at the inner triode of device to be detected at the analog output place reappears out fully; The then effect through the first voltage acquisition module 51, the second voltage acquisition module 52 and operational amplifier OP1 in the Control and Feedback unit 5; And the ratio of twice collector C electric current is a fixed value before and after making, twice voltage in front and back that collect through the controlling of sampling unit this moment can calculate the triode temperature inside.
Thus; The utility model has been avoided prior art and has been made the inaccurate defective of temperature detection because the β value is too small; But the direct electric current through reproduction transistor collector C and utilize the negative feedback of operational amplifier OP1 and regulate the first current source assembly 1 and the second current source assembly 2 automatically; So that the ratio of front and back twice transistor collector C electric current is definite value, like this substitution formula Δ Vbe=η * (kT/ q) * ln (Ic1/Ic2) can calculate the internal temperature of triode; So the utility model can improve the temperature test precision greatly.
In the present embodiment; This 51 of first voltage acquisition module has the first divider resistance R1, the first CS SW1, the 3rd CS SW3 and storage piezoelectricity and holds C1; This first divider resistance R1 one end can be undertaken in analog output through the first CS SW1; This first divider resistance R1 holds then ground connection in addition; This storage piezoelectricity holds C1 and is connected in series with the 3rd CS SW3, and both are connected in parallel on the both sides of the first divider resistance R1, voltage and the pressurize through breaking off the 3rd CS SW3 that this storage piezoelectricity appearance C1 can in time obtain the first divider resistance R1 together; It specifically is through letting the closure of the first CS SW1 and the 3rd CS SW3 realize the sampling to the first divider resistance R1 that this storage piezoelectricity holds C1, and realizes storing up the pressurize that piezoelectricity holds C1 through breaking off the 3rd CS SW3; This storage piezoelectricity holds C1 and links to each other with the negative input end of this operational amplifier OP1, and this first divider resistance R1 resistance is the fixedly multiple of the second divider resistance R2 resistance.This second voltage acquisition module 52 has the second divider resistance R2 and the second CS SW2; This second divider resistance R2 one end can be undertaken in analog output through the second CS SW2; This second divider resistance R2 holds then ground connection in addition, and the positive input terminal of this operational amplifier OP1 is accepted the voltage of the second voltage acquisition module 52; Certainly; Need to prove; This first voltage acquisition module 51 and the second voltage acquisition module 52 can also adopt other structure, as long as twice voltage also correctly is input to operational amplifier OP1 before and after obtaining, its structure is not limited to above-mentioned specific embodiment.
Preferably, also be provided with diode D1 between this first divider resistance R1 and the second divider resistance R2 and the earth, the positive pole of this diode D1 links to each other with the second divider resistance R2 with the first divider resistance R1, and the negative pole of this diode D1 links to each other with the earth.So, making the end in addition of win the divider resistance R1 and the second divider resistance R2 is that the current potential that G shown in Figure 2 is ordered promotes to some extent, thereby can make that the electric current reproduction function of current mirror 3 is more accurate.
In addition, this Control and Feedback unit 5 also has the 3rd current source I3 and the 4th CS SW4, and the 3rd current source I3 forms the loop through the 4th CS SW4 with the second divider resistance R2; So through closed the 4th CS SW4; Can draw high the voltage of operational amplifier OP1 positive input terminal; The voltage that is operational amplifier OP1 positive input terminal is higher than the voltage of operational amplifier OP1 negative input end, thereby makes operational amplifier OP1 output terminal can let PMOS pipe M1 and the 2nd PMOS pipe M2 in suitable, all be closed condition.
Under request in person and cooperate shown in Figure 3ly, come the course of work of the utility model is described in detail:
At the beginning; The first CS SW1, the 4th CS SW4 conducting simultaneously, all the other CSs break off, and the D point voltage is drawn high among Fig. 2; The 3rd current source I3 numerical value be set to D point current potential (=I3*R2) definitely be higher than F point current potential; Make that the output terminal CTL voltage of operational amplifier OP1 is logic high, close PMOS pipe M1 and the 2nd PMOS pipe M2, thereby guarantee to have only the first current source I1 and the second current source I2 electric current to flow out.
The first current source I1 produces definite value Ie1, and the Ie1 triode of flowing through produces Ib1, Ic1, and Ib1 flows out the back from DUT and flows in the NMOS pipe M3.Because the second current source I2 and the first current source I1 equate all the time; Therefore the output current of the first current source assembly 1 equals Ie1, is designated as Ie1 ', and because NMOS pipe M3 and the 2nd NMOS pipe M4 form current mirror 3 circuit; Therefore at 3 output current mirror images of current mirror Ib1, be designated as Ib1 '; Therefore the electric current of analog output output is Ie1 '-Ib1 '=Ie1-Ib1; Because Ie1=Ic1+Ib1; Ic1=Ie1-Ib1, so electric current I c1 '=Ie1 '-Ib1 '=Ie1-Ib1=Ic1 of analog output output are so the inner colleeting comb Ic of DUT is just come out by external circuit " reproduction ".The electric current I c1 ' of the analog output output first divider resistance R1 that flows through is designated as at E point current potential: VE1=Ic1 ' * R2+VG1, and wherein VG1 is a G point current potential, at that time in order to mate the B electrode potential, it is more accurate to make the electric current of current mirror 3 reappear.
In first CS SW1 conduction period, the in good time conducting of the 3rd CS SW3 lets storage piezoelectricity hold C1 sampling VE-VG, equals Ic1 ' * R1 so storage piezoelectricity holds the C1 voltage.The 3rd CS SW3 breaks off earlier before the first CS SW1 breaks off, and guaranteeing to store up piezoelectricity appearance C1 voltage is stable in sampling.After the 3rd CS SW3 broke off, storage piezoelectricity held C1 owing to there is not discharge loop therefore can maintain the voltage at two ends.
The first CS SW1 and the 4th CS SW4 break off together afterwards, the second CS SW2 conducting, the at this moment negative feedback structure of operational amplifier OP1 and other devices formation; Grid voltage through continuous adjusting the one PMOS pipe M1 and the 2nd PMOS pipe M2 is regulated the Ie2 electric current; Last operational amplifier adjustment reaches balance, input end this moment " empty short ", and promptly D point current potential equates with F point current potential; D point current potential is Ic2 ' * R2+VG2=Ic2 ' * R1/D+VG2 this moment; F point current potential is Ic1 ' * R1+VG2, so Ic1 ' * R1=Ic2 ' * R1/D, promptly gets D*Ic1 '=Ic2 ' and then obtains Ic2 '/Ic1 '=D.Because Ic1=Ic1 ', Ic2=Ic2 ', so Ic2/Ic1=D realize that Ic2 is Ic1 multiple D, and irrelevant with β.
Therefore according to said method, even if < 1, the result of sample detecting circuit output is Result=N*T+Ti=N* q* Δ Vbe/>k/lnD+Ti to β, and the result does not contain the nonlinearity erron that is caused by β, has improved β < the temperature test precision under 1 situation thus greatly.
Product form of the foregoing description and graphic and non-limiting the utility model and style, the those of ordinary skill of any affiliated technical field all should be regarded as not breaking away from the patent category of the utility model to its suitable variation or modification of doing.
Claims (5)
1. a temperature sensing circuit that is used for the submicron order integrated circuit is characterized in that, comprising:
The first current source assembly links to each other with the emitter of triode and can change the size of emitter injection current;
The second current source assembly, the electric current of output are synchronized with the first current source assembly;
Current mirror, input end links to each other with the base stage of triode, and output terminal links to each other with the output terminal of the second current source assembly and forms analog output;
The sample detecting unit is connected the base stage and the emitter two ends of triode and detects the voltage difference at its two ends;
The Control and Feedback unit; Have the first voltage acquisition module, second voltage acquisition module and the operational amplifier; The output terminal of this first voltage acquisition module is connected on the different input ends of operational amplifier with the output terminal of the second voltage acquisition module; The input end of this first voltage acquisition module and the second voltage acquisition module is then selected a ground and is undertaken in analog output, and the output terminal of this operational amplifier then links to each other with the second current source assembly with the first current source assembly.
2. the temperature sensing circuit that is used for the submicron order integrated circuit as claimed in claim 1; It is characterized in that; This first voltage acquisition module has first divider resistance, first CS, the 3rd CS and storage piezoelectricity to be held; This first divider resistance, one end can be undertaken in analog output through first CS; This first divider resistance is held then ground connection in addition, and this storage piezoelectricity holds the both sides that also are connected in parallel on first divider resistance with the 3rd CS serial connection, and this storage piezoelectricity holds voltage and the pressurize through breaking off the 3rd CS that can in time obtain first divider resistance; This storage piezoelectricity holds and links to each other with the negative input end of this operational amplifier, and this first divider resistance resistance is the fixedly multiple of the second divider resistance resistance; This second voltage acquisition module has second divider resistance and second CS; This second divider resistance, one end can be undertaken in analog output through second CS; This second divider resistance is held then ground connection in addition, and the positive input terminal of this operational amplifier is accepted the voltage of the second voltage acquisition module.
3. the temperature sensing circuit that is used for the submicron order integrated circuit as claimed in claim 2; It is characterized in that; Also be provided with diode between this first divider resistance and second divider resistance and the earth; The positive pole of this diode links to each other with second divider resistance with first divider resistance, and the negative pole of this diode links to each other with the earth.
4. the temperature sensing circuit that is used for the submicron order integrated circuit as claimed in claim 2; It is characterized in that; This Control and Feedback unit also has the 3rd current source and the 4th CS, and the 3rd current source forms the loop through the 4th CS with second divider resistance.
5. the temperature sensing circuit that is used for the submicron order integrated circuit as claimed in claim 1; It is characterized in that; This first current source assembly has first current source and the PMOS pipe that is connected in parallel on first current source; This second current source assembly has second current source and the 2nd PMOS pipe that is connected in parallel on second current source, and the grid of PMOS pipe and the 2nd PMOS pipe interconnects and be connected together the output terminal of operational amplifier.
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| CN2011203323035U CN202229851U (en) | 2011-09-06 | 2011-09-06 | Temperature detection circuit for submicron integrated circuit |
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| CN2011203323035U CN202229851U (en) | 2011-09-06 | 2011-09-06 | Temperature detection circuit for submicron integrated circuit |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103604516A (en) * | 2013-11-06 | 2014-02-26 | 苏州贝克微电子有限公司 | Temperature sensor |
| CN103674299A (en) * | 2012-09-05 | 2014-03-26 | 德克萨斯仪器股份有限公司 | Circuit and method for determining temperature of transistor |
| CN103837253A (en) * | 2014-03-21 | 2014-06-04 | 苏州纳芯微电子有限公司 | CMOS temperature sensor |
| CN112097937A (en) * | 2020-09-07 | 2020-12-18 | 成都海光微电子技术有限公司 | Temperature detection circuit and chip |
-
2011
- 2011-09-06 CN CN2011203323035U patent/CN202229851U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103674299A (en) * | 2012-09-05 | 2014-03-26 | 德克萨斯仪器股份有限公司 | Circuit and method for determining temperature of transistor |
| CN103604516A (en) * | 2013-11-06 | 2014-02-26 | 苏州贝克微电子有限公司 | Temperature sensor |
| CN103837253A (en) * | 2014-03-21 | 2014-06-04 | 苏州纳芯微电子有限公司 | CMOS temperature sensor |
| CN112097937A (en) * | 2020-09-07 | 2020-12-18 | 成都海光微电子技术有限公司 | Temperature detection circuit and chip |
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