CN203178831U - Chip internal temperature control device and experimental instrument - Google Patents
Chip internal temperature control device and experimental instrument Download PDFInfo
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- CN203178831U CN203178831U CN 201320069088 CN201320069088U CN203178831U CN 203178831 U CN203178831 U CN 203178831U CN 201320069088 CN201320069088 CN 201320069088 CN 201320069088 U CN201320069088 U CN 201320069088U CN 203178831 U CN203178831 U CN 203178831U
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Abstract
A chip internal temperature control device integrates an electric heating system, a temperature measurement sensor and a crystal triode containing a measured PN junction on the same semiconductor chip, and adopts the electric heating system, the temperature measurement sensor and a controller to perform chip internal temperature control. An experimental instrument comprises a power box, a temperature control bench, a display bench, and a circuit demonstration board; wherein the temperature control bench comprises a processor, a drive circuit, an environment temperature sensor, a semiconductor chip, a temperature control knob, and a display unit; the temperature control knob is connected with a temperature control signal input end of the processor; a measuring triode containing a measured PN junction, an on-chip heating triode used for heating, and an on-chip temperature sensing triode used for measuring an internal temperature of the chip are integrated on the semiconductor chip; a base electrode, an emitter electrode, and a collector electrode of the measuring triode are respectively connected with a connecting terminal; a heating current signal output end of the processor controls a base electrode and an emitter electrode of the on-chip heating triode; a base electrode b and an emitter electrode e of the on-chip temperature sensing triode are connected with an input end of an analog-to-digital converter.
Description
Technical field
The utility model relates to research chip temperature characteristic and association area, is specifically related to a kind of accurate control chip internal temperature and to chip internal temperature real-time measurement and Calibration Method.
The technical program also provides as universities and scientific research institution's electrotechnical, electronic and physics facility.This experiment instrument based on chip-scale PN junction temperature control equipment is used in PN junction temperature characterisitic, volt-ampere characteristic especially, and some other The Characteristic Study of triode and the understanding of small signal amplification circuit, also be applied to the mensuration of constant Boltzmann constant in the Physical Experiment simultaneously.
Background technology
The method and apparatus kind that the existing chip working temperature is measured is more single, substantially all be that chip to be tested is placed a thermos cup that fills liquid (insulating oil or water etc.), by the temperature of liquid in the thermos cup is controlled the temperature of controlling and measure chip indirectly, be about to the temperature that environment temperature is approximately the brilliant source of chip internal.And this kind apparatus and method have obvious defects; the one, it is inaccurate to record temperature; this mainly is owing to have one deck to protect the plastic packaging shell in brilliant source between the brilliant source of chip internal and the external environment condition; the volume of this plastic packaging shell and quality all are far longer than volume and the quality in the brilliant source of chip itself; and the heat that produces when no matter being chip internal work is delivered to external environment or the heat of external environment is delivered to chip internal; all to pass through this layer of plastic packaging shell medium; and plastic packaging shell itself also can be taken away certain heat in this process; the actual heat that arrives chip internal will be less with the theoretical heat that transmits of sublimity; make between chip internal and the environment to have thermograde, the temperature of Ying Xiang chip internal is not actual temperature thus.The 2nd, the temperature control time is longer, this mainly is that the specific heat capacity of liquid is bigger owing to conduct to chip by the heat of the liquid in the thermos cup, and thermal inertia is also big with respect to metal solid, even if environment temperature is also wayward, the actual fluctuation of the temperature of chip internal is also very frequent.Moreover across capsulation material, reach thermal equilibrium needs the regular hour between environment and the chip internal.
Utilize the experimental provision of PN junction temperature variation to mainly contain PN junction characteristic research experiment instrument and Boltzmann constant determination experiment instrument two classes in the market.This two classes device instrument all utilizes the PN junction variation of temperature greatly.Exist on the market now the PN junction temperature is controlled mainly is to utilize the heating and cooling of thermos cup to measure, and its weak point is that the PN junction adjustment time is long, and it is not accurate to measure the PN junction temperature.These 2 applicabilities that greatly hinder this control method itself.
Semiconductor is all to have used the semiconductor Related product at computing machine, consumer electronics and communication facilities etc. as the foundation stone of integrated circuit.For this reason, the universities as the training of personnel also should provide one can make students ' understanding understand the platform of grasping its principle features.The research device to transistor and diode PN junction of Cun Zaiing also rests on the research to its volt-ampere characteristic in the market, to the research of its temperature characterisitic so far without comparison desirable product occur.Temperature is very important to the influence of integrated circuit, must study its temperature characterisitic thus.
Boltzmann constant K is as very important physical quantity in calorifics and the statistical mechanics, by vast university physics laboratory as one of required experiment.
Because PN junction forward current I and voltage U
BeSatisfy relation:
I =
I 0[exp（
eU be ／KT）－1] （2-1）
Exp(
EU Be / KT) 1, can draw
I=
I 0Exp(
EU Be / KT) (2-2)
I
0Be reverse saturation current, e is the quantity of electric charge of electronics.
As long as can drawing, formula measures the PN junction voltage U by (2-2)
Be, PN junction temperature T and forward current I just can record Boltzmann constant K.
Such experimental facilities of Cun Zaiing mainly is by thermos cup control PN junction temperature in the market, be similar to the temperature T of chip internal PN junction indirectly by the temperature of measuring thermos cup, because must there be temperature difference in the environment of chip internal and thermos cup inside and outside can not reaching the thermal equilibrium state chip in the short time, the non-PN junction true temperature of the temperature that namely records, thus the accuracy of Boltzmann constant K strengthened.
In actual measurement, the electric current of diode does not have only dissufion current, also have depletion layer recombination current and surface current, in order accurately to record Boltzmann constant K, do not adopt silicon diode and the applying silicon triode is connected into the common-base circuit (see figure 1), eliminate dissufion current with the influence of extrinsic current with this.
The PN junction chip temperature is Δ k/ Δ T to the influence of measurement result, near normal temperature (273.15 ° of K), to cause the experimental error of Boltzmann's parameter about 0.3% during 1 ℃ of temperature error, when testing, historical facts or anecdotes not only to measure the temperature value of PN junction exactly, and to guarantee that temperature is constant (temperature constant state) in the experimentation, generally be to place PN junction mixture of ice and water to experimentize for satisfying this condition in testing, this experimental temperature condition can not change in the past.
The part instrument carries out temperature survey and control by electronic system in recent years, but method all is to replace the PN junction chip temperature with environment temperature, the PN junction true temperature can't be known and control, measure the self-heating effect of electric current and can't eliminate especially, have certain systematic error, influence measurement effect, simultaneously because mass of system and thermal capacity are bigger, temperature variation is slow, heating and cooling periodicity ten minutes, and institute's time-consuming is long.
Summary of the invention
In order to solve the above-mentioned problems in the prior art, the technical program is utilized chip-scale PN junction temperature-controlled process and device in the experiment of triode characteristic research and Boltzmann constant determination experiment etc., can regulate and measure the PN temperature fast and accurately.
The technical program is to utilize chip-scale PN junction temperature control modules to be the basis, form PN junction characteristic research experiment instrument and Boltzmann constant determination experiment instrument, the thinking of the technical program is, utilize self-heating effect and the temperature variant relation of PN junction voltage of PN junction electric current in the chip internal triode array (for example 3046 series of Fig. 2), come the PN junction temperature is controlled and measured.Concrete technical scheme is as follows:
A kind of chip internal temperature-controlled process is integrated electric heating system, temperature probe and the transistor that contains tested PN junction on same semi-conductor chip;
Temperature probe and tested PN junction are positioned at same semiconductor wafer; By processor chip is realized heating and temperature control.
Same semi-conductor chip is made up of at least three identical triodes, and these several triode physical characteristicss are extremely close;
For temperature sensor: choose that any one triode carries out the measurement of chip internal PN junction temperature in the semi-conductor chip; Because triode electric current when work produces heat, and the promising proportionate relationship of the voltage at the rising of its PN junction temperature and PN junction two ends, certain and collector voltage Uc one timing when the transistor base current Ib, junction voltage Ube and the junction temperature T of this PN junction are linear, it is 1 ℃ of the every rising of temperature, the voltage at PN junction two ends reduces Ux, can measure the real time temperature that is used for measuring PN junction of chip internal thus by the PN junction change in voltage of one of them triode;
For electric heating system: heating module is to utilize the PN junction of any triode in the semi-conductor chip along with the rising of electric current on it, the heat of its generation is ever-increasing principle also, by the electric current on the control PN junction, and then heat what the control PN junction produces, thereby with the tested PN junction heating module of this PN junction as chip internal.
If will record the real temperature of tested PN junction, also need to calibrate before chip operation: the temperature correction module is to gather environment temperature with outside environment temperature sensor; Because before experiment instrument did not start, semi-conductor chip inside and environment were in same thermal equilibrium environment, under thermal equilibrium state, the temperature of chip internal equals environment temperature; The temperature that collected by environment temperature sensor this moment is chip internal initial temperature T0; Be Ube0 as the voltage that the PN junction of temperature sensor records this moment, when 1 ℃ of this PN junction temperature variation, and the change in voltage Ux at PN junction two ends, this voltage U x amplifies by amplifying circuit, and obtains the signal that can distinguish through analog to digital converter;
It is Ut that known PN junction voltage varies with temperature coefficient, and initial reference voltage is Ube0, and the voltage that temperature regulating device records is Ubet, and chip internal initial temperature T0 can draw the temperature T of PN junction to be measured thus:
T=T0+（Ubet -Ube0）/ Ut （1-1）
Accordingly, record the real time temperature of PN junction.
A kind of chip internal temperature control equipment comprises power module, processor, driving circuit, semi-conductor chip, temperature control knob, display unit, analog to digital converter and digital to analog converter; Power module provides charged source for this chip internal temperature control equipment;
The temperature control knob connects the temperature signal input end of processor;
Integrated at least three separate triodes on the described semi-conductor chip; Comprise in these triodes: contain the measurement that is useful on tested PN junction with triode, be used for heating triode in the sheet of heating and be used for measuring temperature-sensitive triode in the sheet of chip internal temperature;
Described measurement is with being connected with connection terminal respectively on the base stage of triode, the emitter and collector, and connection terminal is designated b, e and c respectively;
The heating current signal output part of described processor connects the control driving circuit by D/A converting circuit, heating transistor base and emitter in the drive current output terminal brace of driving circuit, PN junction between this base stage and the emitter is as heating module, and the electric current on the PN junction is adjustable;
Base current Ib and the collector voltage Uc of described interior temperature-sensitive triode are constant, and the base stage b of temperature-sensitive triode and the voltage signal between the emitter e are through amplifying and pass to temperature signal input end in the sheet of processor after the analog to digital converter conversion in the sheet;
Described display unit connects the demonstration signal output part of processor.
Carry out temperature controlled method and apparatus from chip internal and can be described as an innovation, solved the deficiency that classic method and device exist fully.
A kind of based on the temperature controlled experiment instrument of chip-scale PN junction, comprising:
A, power supply box: power supply box is built-in with the AC/DC conversion electric power; Power supply box provides operating voltage for display station and circuit demonstration plate;
B, circuit demonstration plate: be loaded with voltage regulator, resistance R i, resistance R _ f, operational amplifier, power measurement connection terminal on the circuit demonstration plate, test with triode and insert connection terminal, PN junction voltage measurement connection terminal and operational amplifier output voltage measurement connection terminal, they are arranged on the circuit demonstration plate according to experimental circuit;
C, display station: display station comprises reometer, voltage table and multivoltmeter;
It is characterized in that also comprising:
D, temperature control platform: power supply box provides operating voltage for the temperature control platform;
D, described temperature control platform comprise processor, driving circuit, semi-conductor chip, temperature control knob, display unit, analog to digital converter and digital to analog converter;
The temperature control knob connects the temperature signal input end of processor;
Integrated at least three separate triodes on the described semi-conductor chip; Comprise in these triodes: contain the measurement that is useful on tested PN junction with triode, be used for heating triode in the sheet of heating and be used for measuring temperature-sensitive triode in the sheet of chip internal temperature;
Described measurement is with being connected with connection terminal respectively on the base stage of triode, the emitter and collector, and connection terminal is designated b, e and c respectively;
The heating current signal output part of described processor connects the control driving circuit by D/A converting circuit, heating transistor base and emitter in the drive current output terminal brace of driving circuit, PN junction between this base stage and the emitter is as heating module, and the electric current on the PN junction is adjustable;
Base current Ib and the collector voltage Uc of described interior temperature-sensitive triode are constant, and the base stage b of temperature-sensitive triode and the voltage signal between the emitter e are through amplifying and pass to temperature signal input end in the sheet of processor after the analog to digital converter conversion in the sheet;
Described display unit connects the demonstration signal output part of processor.
In the technique scheme:
The dc output end of A, AC/DC conversion electric power comprises: be fixing 5V voltage output end and tunnel direct current variable voltage output terminal of powering for the circuit demonstration plate of the identical direct current of the two-way of temperature control platform and display station power supply, this variable voltage output terminal output voltage is the variable forward voltage of 0～1.5V and the variable reverse voltage of 0～9V;
The input end of B, described voltage regulator is provided with the connection terminal corresponding with the variable voltage output terminal of power supply box; The adjusting knob of voltage regulator is exposed at the surface of circuit demonstration plate;
It is extreme that "+" of described voltage regulator output terminal extremely connects "-" of PN junction voltage measurement connection terminal by lead, and "-" of PN junction voltage measurement connection terminal extremely connects triode respectively by lead and insert "-" that connection terminal base stage b end and operational amplifier output voltage V o measure connection terminal extremely;
"-" of described operational amplifier output terminal extremely connects the end of resistance R i by lead; The other end of resistance R i is extreme by "-" that lead connects PN junction voltage measurement connection terminal, and also is provided with connection terminal on this section lead; "-" of PN junction voltage measurement connection terminal extremely connects triode by lead and inserts connection terminal emitter e end;
Low level "-" input end of described operational amplifier connects triode by lead and inserts connection terminal collector c end; High level "+" input end of operational amplifier connects triode by lead and inserts connection terminal base stage b end; "+" that the output terminal of operational amplifier is measured connection terminal by lead concatenation operation amplifier output voltage is extreme; Described resistance R _ f is by lead and be connected in the output terminal of operational amplifier high level "+" input end and operational amplifier;
C, described reometer be measure the Ri that flows through electric current, voltage table be measure the PN junction two ends voltage with multivoltmeter be the measuring operational amplifier output voltage.
Described Rf has two different feedback resistances of resistance, and two Rf select place in circuit by toggle switch.
Described temperature control platform also comprises environment temperature sensor, and the output terminal of environment temperature sensor connects the ambient temperature signal input end of processor
Remedied fully in the prior art based on chip-scale PN junction temperature control equipment experiment instrument, the PN junction adjustment time is long, and it is not enough accurately to measure the PN junction temperature, from chip internal the PN junction temperature is carried out real-time control survey.This experiment instrument can be used for PN junction characteristic research and Boltzmann constant determination experiment.
The PN junction characteristic research experimental provision that the technical program utilizes the chip-scale attemperating unit to form can be very desirable show its characteristic to the student.
Description of drawings
Fig. 1 be measure Boltzmann constant K be connected into common-base circuit by silicon triode.
Fig. 2 is the triode array synoptic diagram of 3046 family chip inside.
Fig. 3 is the semi-conductor chip model of the technical program.
Fig. 4 be among the LM3046 voltage U be between NPN type transistor base b and the emitter e to change with temperature T be curve synoptic diagram.
Fig. 5 forms electric current～voltage changer principle schematic with LF356.
Fig. 6 is the structural representation of this experiment instrument.
Fig. 7 is semi-conductor chip inside temperature measurement method synoptic diagram.
Figure A-1:PN knot volt-ampere characteristic synoptic diagram.
Figure A-2: Ube and Ibe concern synoptic diagram under the different temperatures.
The curve map of figure A-3:PN junction temperature T and PN junction voltage U be.
Figure B-1: Ube-Uc graph of relation and Ube-InUc graph of relation when temperature T.
Embodiment
With regard to object lesson, the technical program method is described below:
A kind of chip internal temperature-controlled process is integrated electric heating system, temperature probe and the transistor that contains tested PN junction on same semi-conductor chip;
Temperature probe and tested PN junction are positioned at same semiconductor wafer; By processor chip is realized heating and temperature control.
Same semi-conductor chip is made up of at least three identical triodes, and these several triode physical characteristicss are extremely close;
For temperature sensor: choose that any one triode carries out the measurement of chip internal PN junction temperature in the semi-conductor chip; Because triode electric current when work produces heat, and the promising proportionate relationship of the voltage at the rising of its PN junction temperature and PN junction two ends, certain and collector voltage Uc one timing when the transistor base current Ib, junction voltage Ube and the junction temperature T of this PN junction are linear, it is 1 ℃ of the every rising of temperature, the voltage at PN junction two ends reduces Ux, can measure the real time temperature that is used for measuring PN junction of chip internal thus by the PN junction change in voltage of one of them triode;
For electric heating system: heating module is to utilize the PN junction of any triode in the semi-conductor chip along with the rising of electric current on it, the heat of its generation is ever-increasing principle also, by the electric current on the control PN junction, and then heat what the control PN junction produces, thereby with the tested PN junction heating module of this PN junction as chip internal.
If will record the real temperature of tested PN junction, also need to calibrate before chip operation: the temperature correction module is to gather environment temperature with outside environment temperature sensor; Because before experiment instrument did not start, semi-conductor chip inside and environment were in same thermal equilibrium environment, under thermal equilibrium state, the temperature of chip internal equals environment temperature; The temperature that collected by environment temperature sensor this moment is chip internal initial temperature T0; Be Ube0 as the voltage that the PN junction of temperature sensor records this moment, when 1 ℃ of this PN junction temperature variation, and the change in voltage Ux at PN junction two ends, this voltage U x amplifies by amplifying circuit, and obtains the signal that can distinguish through analog to digital converter;
It is Ut that known PN junction voltage varies with temperature coefficient, and initial reference voltage is Ube0, and the voltage that temperature regulating device records is Ubet, and chip internal initial temperature T0 can draw the temperature T of PN junction to be measured thus:
T=T0+（Ubet -Ube0）/ Ut （1-1）
Accordingly, record the real time temperature of PN junction.
Specific embodiment of this method as Fig. 7, comprises power module, DATA REASONING processing module (being processor), temperature correction module (environment temperature sensor), chip sample to be measured (semi-conductor chip), display unit and temperature control knob.Wherein power module carries out step-down with 220VAC by the 220V-5V transformer, become 5VAC, transfer 5VDC to by bridge rectifier circuit again, carry out filtering by em filtering device and filter capacitor at last, the very little supply voltage (specifically can be realized by the power supply box in the experiment instrument) that can supply with the work of DATA REASONING disposal system of output ripple.Wherein the DATA REASONING processing module can be adopted as the ATMEGA series monolithic that atmel corp produces, and can collect and handle signal after voltage module provide power supply, sends series of instructions simultaneously, impels peripheral components work, functions such as temperature control.The temperature correction module can be to adopt the high-precision temperature digital temperature sensor to form, and when opening temperature regulating device initial temperature is proofreaded.Chip to be measured is can be that oneself is as the chip of transistor array.Display unit can adopt by 0.5 cun and be total to light-emitting diode display or the lcd LCD that the bright charactron in Yanggao County is formed.
What chip to be measured was used in this example is the LM3046 chip.The temperature correction module is high accuracy number temperature sensor 18b20.The temperature control knob is the 3590S multiturn potentiometer.
In actual measurement, the LM3046 chip is made up of 5 NPN type triodes, and these 5 NPN triode physical characteristicss are extremely close, can choose the measurement that one of them NPN carries out LM3046 chip internal PN junction temperature arbitrarily.Because triode electric current when work can produce heat, and the rising of its PN junction temperature has certain proportionate relationship (accompanying drawing 4) with the voltage at PN junction two ends, and it is certain in the transistor base current Ib, collector voltage Uc one regularly, junction voltage Ube and the junction temperature T of PN junction are linear, be 1 ℃ of the every rising of temperature, the voltage at PN junction two ends reduces Ux can measure the chip internal PN junction thus by the change in voltage of one of them NPN triode real time temperature.Heating module is to utilize NPN knot along with the heat of its generation of rising of electric current also constantly increases, the control by foreign current can controller produce heat what with it as chip internal PN junction heating module.If will record real temperature also needs to calibrate before chip operation.The temperature correction module is gathered environment temperature, because before device does not start, chip internal and environment are in same thermal equilibrium environment, by the first law of thermodynamics as can be known, under the situation that does not have extraneous acting, energy always flows to cryogenic object from high temp objects, finally reaches same temperature and namely is in thermal equilibrium state.Temperature at the thermal equilibrium state chip internal equals environment temperature.The temperature that have 18B20 high accuracy number sensor to collect this moment is chip internal initial temperature T0.The voltage that this moment, the temperature control module PN junction recorded is Ube0, when 1 ℃ of PN junction temperature variation, the change in voltage Ux at PN junction two ends, Ux are 1.8 ~ 2.6mv, the variation of this voltage is very little, also needs by amplifying circuit it further to be amplified to the signal that analog to digital converter can be distinguished.By differential amplifier circuit the small-signal that changes is amplified for this reason and be passed to signal processing system.
It is Ut that known PN junction voltage varies with temperature coefficient, and initial reference voltage is Ube0, and the voltage that temperature regulating device records is Ubet, can draw the temperature T of PN junction to be measured thus:
T=T0+（Ubet -Ube0）/ Ut
Can record the real time temperature of PN junction according to this technology, its precision is far longer than the effect by thermos cup control survey chip temperature.And there is not the interference of environment temperature.Chip internal Temperature Control Model to be measured is seen accompanying drawing 3.By reference to the accompanying drawings 3, specific implementation method is as follows:
At first power module links to each other with the DATA REASONING disposal system, the voltage of this system works namely is provided, the DATA REASONING disposal system links to each other with the temperature correction module, temperature control modules links to each other with the equal data measurement process module of chip to be measured, and the DATA REASONING processing module will record temperature and show by display module.
Selected chip internal temperature control survey method:
A, power module provide voltage for the DATA REASONING processing module, the DATA REASONING processing module is at first measured the residing environment temperature of chip temperature to be measured by the temperature correction module, because chip internal and environment be in same thermal equilibrium before work, environment temperature is chip internal temperature in fact.Secondly, when the DATA REASONING disposal system is carried out temperature survey to the temperature control chip, the residing environment temperature of chip is gathered initialization chip initial temperature earlier;
Regulate the temperature control knob after the b, temperature correction, increase or the electric current of the heating module PN junction that reduces to flow through makes PN junction to be measured is heated or lowers the temperature;
C, after the temperature control modules adjustment, variation by temperature measurement module PN junction voltage under this temperature feeds back to DATA REASONING and handles mould change in voltage is amplified, then carry out analog-to-digital conversion, its temperature value is transferred to display module, the temperature change value of hence one can see that chip internal, and its real time temperature.
A kind of based on the temperature controlled experiment instrument of chip-scale PN junction, comprise power supply box, temperature control platform, display station and circuit demonstration plate; Power supply box provides operating voltage for temperature control platform, display station and circuit demonstration plate by lead;
A, described power supply box are built-in with the AC/DC conversion electric power, the dc output end of AC/DC conversion electric power comprises: be fixing 5V voltage output end and tunnel direct current variable voltage output terminal of powering for the circuit demonstration plate of the identical direct current of the two-way of temperature control platform and display station power supply, this variable voltage output terminal output voltage is the variable forward voltage of 0～1.5V and the variable reverse voltage of 0～9V;
B, described circuit demonstration plate comprise that voltage regulator, resistance R i, resistance R _ f, operational amplifier, power measurement connection terminal, experiment insert connection terminal, PN junction voltage measurement connection terminal, operational amplifier output voltage measurement connection terminal with triode; Described Rf has two different feedback resistances of resistance, and two Rf are by the toggle switch place in circuit;
The input end of described voltage regulator is provided with the connection terminal corresponding with the variable voltage output terminal of power supply box; The adjusting knob of voltage regulator is exposed at the surface of circuit demonstration plate;
It is extreme that "+" of described voltage regulator output terminal extremely connects "-" of PN junction voltage measurement connection terminal by lead, and "-" of PN junction voltage measurement connection terminal extremely connects triode respectively by lead and insert "-" that connection terminal base stage b end and operational amplifier output voltage V o measure connection terminal extremely;
"-" of described voltage regulator output terminal extremely connects the end of resistance R i by lead; The other end of resistance R i is extreme by "-" that lead connects PN junction voltage measurement connection terminal, and also is provided with connection terminal on this section lead; "-" of PN junction voltage measurement connection terminal extremely connects triode by lead and inserts connection terminal emitter-base bandgap grading e end;
Low level "-" input end of described operational amplifier connects triode by lead and inserts connection terminal collector c end; High level "+" input end of operational amplifier connects triode by lead and inserts connection terminal base stage b end; "+" that the output terminal of operational amplifier is measured connection terminal by lead concatenation operation amplifier output voltage is extreme; Described resistance R _ f is by lead and be connected in the output terminal of operational amplifier high level "+" input end and operational amplifier;
C, described display station comprise the reometer of the electric current of measuring the Ri that flows through, the voltage table of voltage of measuring the PN junction two ends and the multivoltmeter of measuring operational amplifier output voltage;
D, described temperature control platform comprise processor, driving circuit, environment temperature sensor, semi-conductor chip, temperature control knob, display unit, analog to digital converter and digital to analog converter; (as Fig. 7)
The temperature control knob connects the temperature signal input end of processor;
Integrated at least three separate triodes on the described semi-conductor chip; Comprise in these triodes: contain the measurement that is useful on tested PN junction with triode, be used for heating triode in the sheet of heating and be used for measuring temperature-sensitive triode in the sheet of chip internal temperature;
Be connected with connection terminal respectively on base stage, emitter-base bandgap grading and the collector of described measurement with triode, connection terminal is designated b, e and c respectively;
The heating current signal output part of described processor connects the control driving circuit by D/A converting circuit, heating transistor base and emitter-base bandgap grading in the drive current output terminal brace of driving circuit, PN junction between this base stage and the emitter-base bandgap grading is as heating module, and the electric current on the PN junction is adjustable;
Base current Ib and the collector voltage Uc of described interior temperature-sensitive triode are constant, and the base stage b of temperature-sensitive triode and the voltage signal between the emitter-base bandgap grading e are through amplifying and pass to temperature signal input end in the sheet of processor after the analog to digital converter conversion in the sheet;
Described display unit connects the demonstration signal output part of processor.
The specific embodiment of this experiment instrument is as follows:
The technical program based on chip-scale PN junction temperature control, be integrated electric heating system, temperature probe and the transistor that contains tested PN junction on same semi-conductor chip.Temperature probe and PN junction are positioned at same semiconductor wafer, have eliminated with environment temperature to replace the systematic error of PN junction true temperature and measure the self-heating error that electric current causes; Embedded single-chip computer system in the instrument is realized heating and temperature control to chip, because the quality of semi-conductor chip very little (only milligram magnitude) own, thermal capacity is very little, therefore very fast to temperature controlling, can reach hundreds of times/per second, omnidistance heat up and stable as long as tens seconds, as long as omnidistance cooling is also stable also 1～2 minute, and the control temperature is 0.1 ℃.The semi-conductor chip model of the technical program is seen Fig. 3.
The characteristics of the technical program are to have utilized chip-scale PN junction temperature control technology.In actual measurement, some chips (for example LM3046 chip) are made up of several identical NPN type triodes, and these several NPN triode physical characteristicss are extremely close, and can choosing wherein, any one NPN carries out the measurement of the inner PN junction temperature of chip (for example LM3046 chip).Because triode electric current when work can produce heat, and the voltage at the rising of its PN junction temperature and PN junction two ends has certain proportionate relationship (as Fig. 4), and certain and collector voltage Uc one timing in the transistor base current Ib, junction voltage Ube and the junction temperature T of PN junction are linear, it is 1 ℃ of the every rising of temperature, the voltage at PN junction two ends reduces Ux, can measure the real time temperature of chip internal PN junction thus by the change in voltage of one of them NPN triode.
Heating module is to utilize a PN junction along with the rising of electric current, and the heat of its generation is ever-increasing principle also, by the control of foreign current, can control its produce heat what and with it as chip internal PN junction heating module.If will record real temperature, also need before chip operation, to calibrate.The temperature correction module is to gather environment temperature with the high accuracy number sensor, because before device does not start, chip internal and environment are in same thermal equilibrium environment, by the first law of thermodynamics as can be known, under the situation that does not have extraneous acting, energy always flows to cryogenic object from high temp objects, finally reaches same temperature and namely is in thermal equilibrium state.Under thermal equilibrium state, the temperature of chip internal equals environment temperature.The temperature that collected by high accuracy number sensor (for example 18B20 type digital temperature sensor) this moment is chip internal initial temperature T0.The voltage that this moment, the temperature control module PN junction recorded is Ube0, when 1 ℃ of PN junction temperature variation, the change in voltage Ux at PN junction two ends, Ux is-1.8mv-2.6mv, the variation of this voltage is very little, also needs by amplifying circuit it further to be amplified to the signal that analog to digital converter can be distinguished.By differential amplifier circuit the small-signal that changes is amplified for this reason and be passed to signal processing system.
It is Ut that known PN junction voltage varies with temperature coefficient, and initial reference voltage is Ube0, and the voltage that temperature regulating device records is Ubet, and chip internal initial temperature T0 can draw the temperature T of PN junction to be measured thus:
T=T0+（Ubet -Ube0）/ Ut （1-1）
Can record the real time temperature of PN junction according to this technology, its precision is far longer than the effect by thermos cup control survey chip temperature.And there is not the interference of environment temperature.
Experiment instrument based on chip-scale PN junction temperature control equipment comprises temperature control platform, power supply box, display station and circuit demonstration panel four parts composition.Wherein:
Power supply box provides power supply for the PN junction sample (as: PN junction among the LM3046) in the temperature control platform, and power supply box also supplies its work with power delivery to display station, and power supply box provides variable power supply Ube that the work of circuit demonstration panel is provided simultaneously.Wherein the temperature control knob can be regulated the PN junction variation of temperature, and minimum change can reach 0.1 ℃.LED_1 shows the temperature of PN junction.3 jacks on the s temperature control platform are respectively b, c, e, are a NPN type triode in the LM3046 chip is drawn, so that place in circuit demonstration panel.In experimental implementation, by p-wire b, c, e on the b on the control desk, c, three jacks of e and the circuit demonstration panel are connected.1 corresponding jack output 5V direct current can provide control desk work in the frame of broken lines of power supply box, frame of broken lines 2 is all the 5V direct current display station work is provided, and frame of broken lines 3 is to provide the variable forward voltage of 0～1.5V and the variable reverse voltage of 0～9V to the circuit demonstration panel.LED_2 is the electric current gauge outfit in the display station, can record the electric current of the Ri that flows through, and this electric current is the electric current I of the PN junction of flowing through, and LED_3 is 2V voltage table gauge outfit, is used for surveying the voltage U be at PN junction two ends; LED_4 is 200mv, 2.0V and 20V third gear voltmeter head, and Uo=Uc measures Uo.
Utilizing said apparatus to experimentize and studying has two classes, but all is to utilize device shown in Figure 6:
One class is the experiment of triode characteristic research, and its method step is as follows:
A, opening power case, connection line.Power supply box frame of broken lines 1 provides working power for the temperature control platform by lead, power supply box frame of broken lines 2 inserts display station by lead, 3 LED are provided corresponding work of measuring gauge outfit, and power supply box frame of broken lines 3 is received circuit demonstration panel regulated power supply both sides by lead, and Ube is provided voltage.By lead two jacks of b, e on the circuit demonstration panel are received display station LED_3 voltmeter head respectively, show the voltage at PN junction two ends.Resistance R i receives LED_2 by lead in two ends, shows the electric current by the PN junction two ends.Known
Ui/Ri=Ibe （1-2）
LED_2 namely utilizes (1-2) formula to record PN junction current Ib e.In triode characteristic research experiment, only utilize the part loop in the frame of broken lines of circuit demonstration panel.
B, before measuring at first to the calibration of temperature control platform temperature control, this calibration can be when instrument uses first primary calibration, also can test calibration before the beginning later on, in experimental situation, be in thermal equilibrium state but prerequisite is the temperature control platform at tested PN junction print.
C, research triode PN junction volt-ampere characteristic.Volt-ampere characteristic is the relation that PN junction electricity current Ib e changes with PN junction voltage U be.Regulate Ube by the Ube adjusting knob and between 0～1.5V, change, observe the change of current Ib e, measure its forward characteristic.Continuation by regulate the Ube adjusting knob regulate Ube 0～-change between the 9V, observe the variation of flowing through PN junction current Ib e, measure its reverse characteristic.Forward characteristic and reverse characteristic curve be placed on same the coordinate paper can find out its volt-ampere characteristic intuitively.
D, research triode PN junction temperature characterisitic.Temperature characterisitic refers under different temperature, the variation relation of the current Ib e of PN junction both end voltage Ube and the PN junction of flowing through.Regulate the PN junction temperature by the temperature control knob, make it be stabilized in T1, regulate Ube voltage, and observe Ube at display station LED_3, in the variation that display station LED_2 observes Ibe, select tests such as other temperature spots T2, T3, T4, T5 equally again.Data under the different temperature points are plotted in the influence that to find on the same coordinate paper that its temperature variation produces.
E, research temperature are when constant to PN junction current Ib e, and temperature T is to the influence of PN junction voltage U be.
Another kind of is to measure Boltzmann constant.By semiconductor physics as can be known, the forward current-voltage relationship of PN junction satisfies (1-1) formula
I =
I 0[exp(
eU be ／KT)－1]
In (1-1) formula,
IBe the forward current by PN junction,
I 0Be not with the constant of change in voltage,
TBe thermodynamic temperature,
eBe the electric weight of electronics,
UBe the PN junction forward drop.Since normal temperature (
T≈ 300K) time,
KT/e≈ 0.026V, and the PN junction forward drop is about a few tenths of volt, then exp (
EU/KT) 1, so draw (1-1) formula:
I =
I 0exp(
eU be ／KT)
Be that the PN junction forward current changes by index law with forward voltage.If record PN junction
I～
URelation, (1-2) formula of utilization is obtained
E/KT, record temperature again
T, the substitution electron charge
e, can try to achieve Boltzmann constant K.
For the measurement of PN junction dissufion current, the past is used light point reflection formula galvanometer, its sensitivity about 10 always
-9The A/ calibration.But it has many weak points, and for example, it is easily broken to hang silk, very is afraid of shake; During use, careless slightly, cursor easily deflects away from full scale; Moment transships and causes a fatigue deformation, and generation is not returned zero and indicated deviation bigger, uses and keep in repair extremely inconvenience.And the high input impedance operational amplifier function admirable, cheap, form electric current one voltage changer with it and measure the weak current signal, have that input impedance is low, current sensitivity is high, temperature is floated little, good linearity, design and produce advantages such as simple, that structure is firm, thereby be widely used in the physical measurement.
LF356 is the high input impedance integrated operational amplifier, forms electric current～voltage changer with it, as shown in Figure 5.
Z wherein
rBe electric current～voltage changer equivalent input impedance, U
InBe input voltage,
K 0Be the open-loop voltage gain of operational amplifier, namely work as resistance R
fVoltage gain during → ∞.R
fBe feedback resistance, U
cOutput voltage for operational amplifier.As seen from the figure:
U
c = －K
0 U
in (2－3)
Because the input impedance R of ideal operational amplificr
i→ ∞, the feedback network so the signal source input current is only flowed through, thereby have:
I
S = (U
in－U
c)／R
f = U
in (1+K
0)／R
f (2－4)
Can get electric current～voltage changer equivalent input impedance Z by (2-4) formula
rFor:
Z
r = U
in／I
S = R
f／(1+K
0)≈R
f／K
0 (2－5)
By (2-3) formula and (2-4) formula can get electric current～voltage changer input current I
SWith output voltage U
cBetween relational expression, that is:
I
S =－U
c (1+K
0)／(K
0R
f) = －U
c(1+1／K
0)／R
f ≈－U
c／R
f (2－6)
If known R
FAs long as measure U
O, can try to achieve I
SValue.
If get R
fBe 1.00M Ω, select the 200.00mV shelves of four half word voltage tables for use, resolution is 0.01mV, and the minimum PN junction current measurement value that can obtain with above-mentioned electric current～voltage changer and four half word voltage tables is so:
I
min = 0.01×10
－3V／(1.00×10
6Ω) = 1×10
－11A＝10
－5 uA
The output maximum voltage of operational amplifier LF356 operational amplifier is subjected to supply voltage restriction generally about 10V, and corresponding maximum PN junction electric current is about:
I
max = 10V／(1.00×10
6Ω) = 1×10
－5A＝10 uA
The PN junction electric current dynamic range that obtains thus is I
Max/ I
Min=10
6Because PN junction voltage U be and PN junction electric current are exponential relationship, during actual measurement therewith the PN junction voltage U be dynamic range of PN junction electric current correspondence be (resolution 0.01mV, 3 position effective digitals) about 0.10～0.15V.
Use the transistor emitter junction as tested PN junction during experiment, Ri is input resistance, changes power supply E, and Ube is changed, and operational amplifier output voltage U c is:
Uc＝IcRf＝RfI
0exp(eUbe／KT)＝Uc0 exp(eUbe／KT)
eU
be／kT＝ln(Uc/Uc0)=lnUc－lnUc0
Through putting in order:
lnUc＝（e／kT） U
be＋ lnUc0
(2－7)
This is the experimental applications formula of this experiment, and it is illustrated in temperature T and is known as when constant, and lnUc and Ube are linear relationship, with Ube be horizontal ordinate, lnUc be ordinate then straight slope be
E/kT, concern straight line at the coordinate paper Ube～lnUc that draws, just can obtain slope e/KT, substitution known temperature T and electron charge e just can be in the hope of Boltzmann constant K.
Adopt this experiment instrument to carry out actual experiment, be described as follows:
Triode characteristic research experiment instrument and Boltzmann constant determination experiment instrument based on chip-scale PN junction temperature-controlled process device are implemented according to Fig. 6.
A, as follows for the experiment of triode characteristic research:
Power supply box provides operating voltage for temperature control platform, display station and circuit demonstration plate by lead, is used for testing the current Ib e of PN junction of flowing through by display panel LED_2, and the LED_3 input port fetches the lead from triode b, e respectively, shows PN junction voltage U be.Temperature control platform b, e jack link to each other with circuit demonstration plate b, e jack by lead, with NPN triode place in circuit.Regulate temperature control knob control PN junction temperature.Finishing experimental line connects.
1, surveys the PN junction volt-ampere characteristic.By the temperature control knob with temperature stabilization at Tx.Regulate the Ube forward voltage between 0～1.5V by the Ube adjusting knob, begin to get a Ube voltage every 10mv from 0.30V and note down, observe the variation of Ibe, and the size of record Ibe.The Ube forward voltage is not more than 0.75V.Regulate the Ube reverse voltage by the Ube adjusting knob.Begin interval △ U from 0V and increase reverse voltage gradually, note down current Ib e simultaneously, Ibe obviously increases up to the PN junction inverse current, and record is reverse saturation current Is and breakdown reverse voltage U down
BRDraw its volt-ampere characteristic, as figure A-1.
2, survey the triode temperature characterisitic.Regulate the PN junction temperature by the temperature control knob, make it stable, note down down LED_1 temperature displayed T1 at this moment, regulate Ube voltage, choose a Ube value every 10mv, and note the Ube value that display station LED_3 shows, in the variation of display station LED_2 observation Ibe, record Ibe value this moment.The Ube variation range is between 0～0.75V, and the temperature T variation range is in room temperature～110 ℃.Select tests such as other temperature spots T2, T3, T4, T5 equally again.Data under the different temperature points are plotted in the influence that can find on the same coordinate paper that its temperature variation produces, as accompanying drawing A-2.
3, the influence of the PN junction voltage U of thermometric degree T be.At this moment, only need to show by LED_3 the variation of Ube, LED_1 shows the variation of PN junction temperature T.By the Ube adjusting knob Ube is stabilized to about 0.700V, record PN junction voltage U be1 at this moment, the temperature control knob is regulated the PN junction temperature and is regulated from low to high, note down initial temperature T1 in fact, every individual △ T, note down a temperature spot Tn=△ T+Tn-1(n and be the natural number greater than 2), the PN junction voltage U be of record this moment.Select 5～10 temperature spots and corresponding PN junction voltage U be successively.Draw the curve map of PN junction temperature T and PN junction voltage U be at last.As scheme A-3.
B, as follows to the Boltzmann constant determination experiment:
Power supply box provides operating voltage for temperature control platform, display station and circuit demonstration plate by lead, be used for testing the current Ib e of PN junction of flowing through by display panel LED_2, the LED_3 input port fetches the lead from triode b, e respectively, show PN junction voltage U be, the multivoltmeter head of LED_4 correspondence is used for measuring Uc.Because the variation range of Uc is bigger, regulate feedback resistance Rf by toggle switch, can increase or reduce the enlargement factor of its triode.When toggle switch toggles it to Rf=10k Ω, output voltage U c0; And when Rf=100k Ω was, being output as Uc was that Rf=10k is 10 times of output, i.e. voltage U c=10Uc0.Can additionally increase a range thus.One to have four ranges be 20mv,, 200mv,, 2v and 20v or 200mv,, 2v,, 20v, and 200v.
The b of temperature control platform, c, e jack link to each other with circuit demonstration plate b, c, e jack respectively by lead, with NPN triode place in circuit.Regulate temperature control knob control PN junction temperature.Finishing experimental line connects.
Measurement data.At first, stablize the PN junction temperature by the temperature control knob, regulate PN junction voltage U be by the Ube adjusting knob, the Ube variation range is 0～0.75V, and best scope of experiment is 0.3～0.7v, every 10mv, choose a PN junction voltage U be, the Uc value that record is ordered every Ube is measured the value of Uc accurately by feedback resistance and the multivoltmeter head of waved switch control, and is noted down.When the drafting temperature T is constant, Ube-Uc graph of a relation and Ube-InUc graph of a relation, slope value among the Ube-InUc that asks is brought electron charge e and thermodynamic temperature into, extrapolates Boltzmann constant K.Simultaneously can regulate the PN junction temperature, calculate the K value under several different temperature points, weighted mean finally draws the size of Boltzmann constant K.Ube-Uc graph of a relation and Ube-InUc graph of a relation such as accompanying drawing B-1 when temperature T.Obtain its slope a by Ube-InUc curve among the figure B-1, known a=e/KT, e are the electric weight of electronics, and T is thermodynamic temperature.Boltzmann in the time of can drawing temperature T thus is normal.Regulate the PN junction temperature, calculate the K value under several different temperature points, weighted mean finally draws the size of Boltzmann constant K.
Claims (5)
1. a chip internal temperature control equipment is characterized in that comprising power module, processor, driving circuit, semi-conductor chip, temperature control knob, display unit, analog to digital converter and digital to analog converter; Power module provides charged source for this chip internal temperature control equipment;
The temperature control knob connects the temperature signal input end of processor;
Integrated at least three separate triodes on the described semi-conductor chip; Comprise in these triodes: contain the measurement that is useful on tested PN junction with triode, be used for heating triode in the sheet of heating and be used for measuring temperature-sensitive triode in the sheet of chip internal temperature;
Described measurement is with being connected with connection terminal respectively on the base stage of triode, the emitter and collector, and connection terminal is designated b, e and c respectively;
The heating current signal output part of described processor connects the control driving circuit by D/A converting circuit, heating transistor base and emitter in the drive current output terminal brace of driving circuit, PN junction between this base stage and the emitter is as heating module, and the electric current on the PN junction is adjustable;
Base current Ib and the collector voltage Uc of described interior temperature-sensitive triode are constant, and the base stage b of temperature-sensitive triode and the voltage signal between the emitter e are through amplifying and pass to temperature signal input end in the sheet of processor after the analog to digital converter conversion in the sheet;
Described display unit connects the demonstration signal output part of processor.
2. one kind based on the temperature controlled experiment instrument of chip-scale PN junction, it is characterized in that comprising:
A, power supply box: power supply box is built-in with the AC/DC conversion electric power; Power supply box provides operating voltage for display station and circuit demonstration plate;
B, circuit demonstration plate: be loaded with voltage regulator, resistance R i, resistance R _ f, operational amplifier, power measurement connection terminal on the circuit demonstration plate, test with triode and insert connection terminal, PN junction voltage measurement connection terminal and operational amplifier output voltage measurement connection terminal, they are arranged on the circuit demonstration plate according to experimental circuit;
C, display station: display station comprises reometer, voltage table and multivoltmeter;
It is characterized in that also comprising:
D, temperature control platform: power supply box provides operating voltage for the temperature control platform;
Described temperature control platform comprises processor, driving circuit, semi-conductor chip, temperature control knob, display unit, analog to digital converter and digital to analog converter;
The temperature control knob connects the temperature signal input end of processor;
Integrated at least three separate triodes on the described semi-conductor chip; Comprise in these triodes: contain the measurement that is useful on tested PN junction with triode, be used for heating triode in the sheet of heating and be used for measuring temperature-sensitive triode in the sheet of chip internal temperature;
Described measurement is with being connected with connection terminal respectively on the base stage of triode, the emitter and collector, and connection terminal is designated b, e and c respectively;
The heating current signal output part of described processor connects the control driving circuit by D/A converting circuit, heating transistor base and emitter in the drive current output terminal brace of driving circuit, PN junction between this base stage and the emitter is as heating module, and the electric current on the PN junction is adjustable;
Base current Ib and the collector voltage Uc of described interior temperature-sensitive triode are constant, and the base stage b of temperature-sensitive triode and the voltage signal between the emitter e are through amplifying and pass to temperature signal input end in the sheet of processor after the analog to digital converter conversion in the sheet;
Described display unit connects the demonstration signal output part of processor.
3. according to claim 2 based on the temperature controlled experiment instrument of chip-scale PN junction, it is characterized in that
The dc output end of A, AC/DC conversion electric power comprises: be fixing 5V voltage output end and tunnel direct current variable voltage output terminal of powering for the circuit demonstration plate of the identical direct current of the two-way of temperature control platform and display station power supply, this variable voltage output terminal output voltage is the variable forward voltage of 0～1.5V and the variable reverse voltage of 0～9V;
The input end of B, described voltage regulator is provided with the connection terminal corresponding with the variable voltage output terminal of power supply box; The adjusting knob of voltage regulator is exposed at the surface of circuit demonstration plate;
It is extreme that "+" of described voltage regulator output terminal extremely connects "-" of PN junction voltage measurement connection terminal by lead, and "-" of PN junction voltage measurement connection terminal extremely connects triode respectively by lead and insert "-" that connection terminal base stage b end and operational amplifier output voltage V o measure connection terminal extremely;
"-" of described operational amplifier output terminal extremely connects the end of resistance R i by lead; The other end of resistance R i is extreme by "-" that lead connects PN junction voltage measurement connection terminal, and also is provided with connection terminal on this section lead; "-" of PN junction voltage measurement connection terminal extremely connects triode by lead and inserts connection terminal emitter e end;
Low level "-" input end of described operational amplifier connects triode by lead and inserts connection terminal collector c end; High level "+" input end of operational amplifier connects triode by lead and inserts connection terminal base stage b end; "+" that the output terminal of operational amplifier is measured connection terminal by lead concatenation operation amplifier output voltage is extreme; Described resistance R _ f is by lead and be connected in the output terminal of operational amplifier high level "+" input end and operational amplifier;
C, described reometer be measure the Ri that flows through electric current, voltage table be measure the PN junction two ends voltage with multivoltmeter be the measuring operational amplifier output voltage.
4. according to claim 3 based on the temperature controlled experiment instrument of chip-scale PN junction, it is characterized in that described Rf has two different feedback resistances of resistance, two Rf select place in circuit by toggle switch.
5. according to claim 2,3 or 4 described based on the temperature controlled experiment instrument of chip-scale PN junction, it is characterized in that described temperature control platform also comprises environment temperature sensor, the output terminal of environment temperature sensor connects the ambient temperature signal input end of processor.
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| CN103837822A (en) * | 2014-02-28 | 2014-06-04 | 北京时代民芯科技有限公司 | Very large scale integrated circuit junction-to-case thermal resistance test method |
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| CN105784199A (en) * | 2016-03-17 | 2016-07-20 | 青岛海信宽带多媒体技术有限公司 | Optical module |
| CN105784199B (en) * | 2016-03-17 | 2019-06-14 | 青岛海信宽带多媒体技术有限公司 | A kind of optical module |
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| CN107271878A (en) * | 2017-06-14 | 2017-10-20 | 山东阅芯电子科技有限公司 | Pass through the hot properties method of testing and device of electric current heating semiconductor |
| CN107271878B (en) * | 2017-06-14 | 2019-07-30 | 山东阅芯电子科技有限公司 | Pass through the hot properties test method and device of electric current heating semiconductor |
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