CN202189227U - Nano imaging and ultra-wide band electromagnetic property measurement system - Google Patents
Nano imaging and ultra-wide band electromagnetic property measurement system Download PDFInfo
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- CN202189227U CN202189227U CN2011202655955U CN201120265595U CN202189227U CN 202189227 U CN202189227 U CN 202189227U CN 2011202655955 U CN2011202655955 U CN 2011202655955U CN 201120265595 U CN201120265595 U CN 201120265595U CN 202189227 U CN202189227 U CN 202189227U
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Abstract
A nano imaging and ultra-wide band electromagnetic property measurement system comprises a power supply, a control device and a measuring device, wherein the control device and the measuring device are mutually connected and respectively connected with the power supply; and the measuring device comprises an imaging device with an SEM (Scanning Electron Microscope) imaging or EBL (Electron Beam Lithography) imaging function, a vacuum cavity, a vacuum system, a sample table and a magnetic field response characteristic test device, the vacuum system is connected with the vacuum cavity, the imaging device, the sample table and the magnetic field response characteristic test device are all arranged in the vacuum cavity, and the imaging device and the magnetic field response characteristic test device are arranged corresponding to the sample table. The nano imaging and ultra-wide band electromagnetic property measurement system can quickly and efficiently test and research nano materials and devices, as well as the array samples, and has wide application field and market demand.
Description
Technical field
The utility model relates to the pick-up unit of a kind of nano material and device; Particularly a kind of magnetic field based on electron-beam exposure system/electron beam graph generation systems applies, high-frequency electromagnetic signal produces, introduces, transmission and measure and on a large scale under the nano patterning and the ultra broadband electromagnetical characteristic measuring system of nanometer positioning.
Background technology
Along with the development of nanoprocessing and detection technique, nano material and device have been widely used in comprising such as a plurality of fields such as electronics, magnetics, chemistry, biologies.To the research of nano material and device, become one of key problem in Condensed Matter Physics and modern information technologies and the commercial production.Since 1988; The develop rapidly of spintronics is progressively brought information science into one and is comprised the very high-density magnetic storage (T-bit/inch2) of nano magnetic material and the epoch of nanosecond fast reading and writing, this means that research to nano material and device will get into one and comprise the imaging of nanometer micromechanism, nano patterning and GHz high-frequency operation, the composite measurement that magnetic field or electric field participate in and the complete process of analysis are arranged.
Electron beam exposure (electron beam lithography; EBL) system is one of visual plant of present integrated nanometer structure preparation and observation; Comprise scanning electron microscope (SEM) imaging function and electron beam pattern generator, promptly utilize focused beam directly on resist layer, to write out nano graph.Little and the high characteristics of energy according to electron beam spot utilize electron-beam exposure system can make the nanostructured of 5-10 nano-scale linewidth, are the Perfected process of making nano material and device.At present, minimum feature is less than the world record of the nanostructured of 5 nanometers preparation, is that EBL system by German Raith company is achieved and keeps so far.Although part EBL system has introduced the feeler arm of electric signal measurement function,, at present the EBL system also can't realize to the direct observation of nano material and device and original position is electric, magnetic signal is controlled and measure compatible.Its bottleneck problem mainly be because: be used to the electronics that makes public and form images in the EBL system, deflect under the externally-applied magnetic field used of measuring samples or the effect of electric field in position, thereby can serious interference and influence the focusing and the scanning of electron beam.In addition, because probe structure does not pass through particular design, can't accomplish transmission and the measurement of high-frequency signal in the electron beam vacuum system, thereby can't realize the high-frequency signal transmission and the measurement of in-situ nano device.Domestic and international present stage; Usually for the high frequency magnetic of nano material and device, the method for electronic transport characteristic test be; Combine the micro-nano processing and preparing of multistep to be used for the special electrode structure of transmitting high-frequency signal with the EBL exposure earlier; And carry out preliminary direct current or the test of low-frequency ac magneto-electric behavior, and then put into special high-frequency test system and carry out the measurement of magnetoelectricity HF-response signal.Because nanoscale graphical technology difficulty down is big, manufacturing cycle is grown, processing and measuring process are cumbersome etc., has not only increased manufacturing cost, has also greatly prolonged the test duration of nano material and device, success ratio and yield rate also receive remarkable influence.In addition; The feeler arm that though present electron-beam exposure system is integrated has the nanoscale positioning function; But can't accomplish 1 inch or above accurate nanometer positioning on a large scale, the location that only can in less (several micrometer ranges), accomplish probe and sample be connected.
The utility model content
The utility model technical matters to be solved provide that a kind of graphical and pattern that can realize array nano material and device is observed and the original position condition under test and the nano patterning and the ultra broadband electromagnetical characteristic measuring system of analysis of ultra wideband magnetoelectricity transport property.
To achieve these goals; The utility model provides a kind of nano patterning and ultra broadband electromagnetical characteristic measuring system; Comprise power supply, control device and measurement mechanism; Said control device is connected with said measurement mechanism, and said control device is connected with said power supply respectively with said measurement mechanism, wherein; Said measurement mechanism comprises imaging device, vacuum chamber, vacuum system, sample stage and the magnetic responsiveness characteristic test device with SEM imaging or the graphical function of EBL; Said vacuum system is connected with said vacuum chamber, and said imaging device, said sample stage and said magnetic responsiveness characteristic test device all are arranged in the said vacuum chamber, and said imaging device and said magnetic responsiveness characteristic test device are corresponding to said sample stage setting.
Above-mentioned nano patterning and ultra broadband electromagnetical characteristic measuring system; Wherein, Said magnetic responsiveness characteristic test device comprises support and is installed in field generator for magnetic, magnetic field travel mechanism and the magnetic field shielding mechanism on the said support; Said field generator for magnetic comprises coil and magnetic conduction magnetic pole, and said magnetic conduction magnetic pole is connected with said magnetic field travel mechanism, and said magnetic field shielding mechanism is installed on the said support and corresponding to said sample stage setting.
Above-mentioned nano patterning and ultra broadband electromagnetical characteristic measuring system wherein, also comprise the electric field response characteristic proving installation, and said electric field response characteristic proving installation is arranged in the said vacuum chamber and is arranged on said sample stage top.
Above-mentioned nano patterning and ultra broadband electromagnetical characteristic measuring system; Wherein, Said electric field response characteristic proving installation comprises that vertical electric field applies flat board and/or horizontal component of electric field applies flat board and dull and stereotyped travel mechanism, and said vertical electric field applies flat board and/or horizontal component of electric field and applies flat board and be connected with said dull and stereotyped travel mechanism respectively.
Above-mentioned nano patterning and ultra broadband electromagnetical characteristic measuring system; Wherein, Also comprise the response characteristics to light proving installation, said response characteristics to light proving installation comprises light source and response characteristics to light test component, and said response characteristics to light test component is arranged in the said vacuum chamber.
Above-mentioned nano patterning and ultra broadband electromagnetical characteristic measuring system; Wherein, Also comprise the broadband signal device for testing and analyzing; Said broadband signal device for testing and analyzing comprises signal generation device, signal transmitting apparatus and signal analysis device, and said signal generation device and said signal analysis device are connected with said signal transmitting apparatus respectively, and said signal transmitting apparatus is connected with said vacuum chamber and corresponding to said sample stage setting.
Above-mentioned nano patterning and ultra broadband electromagnetical characteristic measuring system; Wherein, Said signal transmitting apparatus comprises high frequency probe arm and/or low frequency feeler arm, feeler arm travel mechanism and probe; Said high frequency probe arm and/or low frequency feeler arm are connected with said feeler arm travel mechanism, and said probe is installed in the front end of said high frequency probe arm and/or low frequency feeler arm.
Above-mentioned nano patterning and ultra broadband electromagnetical characteristic measuring system; Wherein, Said signal transmitting apparatus also comprises the probe detent mechanism, and said probe detent mechanism is installed in the front end of said high frequency probe arm and/or low frequency feeler arm, and said probe detent mechanism is connected with said control device.
Above-mentioned nano patterning and ultra broadband electromagnetical characteristic measuring system; Wherein, Said signal generation device comprises high frequency network analyser, voltage source and current source, and said high frequency probe arm and/or low frequency feeler arm are connected with said high frequency network analyser, said voltage source and said current source respectively.
Above-mentioned nano patterning and ultra broadband electromagnetical characteristic measuring system wherein, also are provided with sample stage travel mechanism in the said vacuum chamber, said sample stage is installed in the said sample stage travel mechanism, and said sample stage travel mechanism is connected with said control device.
The beneficial functional of the utility model is:
Nano patterning of the utility model and ultra broadband electromagnetical characteristic measuring system; Based on the EBL system that comprises SEM high-resolution imaging function; On micro nano structure imaging and patterned basis; Uniform magnetic field or electric field are guided in the sample stage central area effectively, and the broadband electromagnetical signal are introduced and is applied on nanostructured or the device with the probe with nanoscale positioning function, comprise simultaneously the broadband electromagnetical signal introducing, draw and test analysis.This system can realize the test and the analysis of ultra wideband magnetoelectricity transport property under the graphical of array nano material and device and pattern observation and the original position condition.
Compare with prior art; The utility model is on the function basis of EBL; Integrated can carry out the multiple function of characteristic test of high frequency magnetic, electrical, optical and research or the research function of integration test in position; Can carry out the test and the research of nano material and device and array sample thereof quickly and efficiently, have the application fields and the market demand.
Below in conjunction with accompanying drawing and specific embodiment the utility model is described in detail, but not as the qualification to the utility model.
Description of drawings
Fig. 1 is the structured flowchart of the utility model;
Fig. 2 is the structured flowchart of the utility model one examples measure device;
Fig. 3 is the imaging device fundamental diagram of the utility model;
Fig. 4 is the structural representation of the utility model one embodiment;
The vacuum chamber inner structure synoptic diagram of Fig. 5 A the utility model one embodiment;
Fig. 5 B is the magnetic responsiveness characteristic test device structural representation (field generator for magnetic and magnetic field shielding mechanism all are in closed condition) of the utility model one embodiment;
Fig. 5 C is the magnetic responsiveness characteristic test device structural representation (field generator for magnetic and magnetic field shielding mechanism all are in opening) of the utility model one embodiment;
Fig. 6 A is the vertical electric field response characteristics testing device structural representation of the utility model one embodiment;
Fig. 6 B is the horizontal component of electric field response characteristics testing device structural representation of the utility model one embodiment;
Fig. 7 is the response characteristics to light proving installation structural representation of the utility model one embodiment;
Fig. 8 is the high frequency probe arm configuration synoptic diagram of the utility model one embodiment;
Fig. 9 is the structural representation of the high frequency probe arm of the utility model one embodiment when using conductive sensor.
Wherein, Reference numeral
1 power supply
2 control device
21 control panels
22 main control systems
23 communication interfaces
3 measurement mechanisms
31 imaging devices
311 electron guns
312 secondary electron detectors
32 vacuum chambers
33 vacuum systems
34 sample stage
341 sample stage travel mechanisms
342 VTOL (vertical take off and landing) small sample platforms
35 magnetic responsiveness characteristic test devices
351 supports
352 field generator for magnetic
3521 coils
3522 magnetic conduction magnetic poles
353 magnetic field travel mechanisms
354 magnetic field shielding mechanisms
36 electric field response characteristic proving installations
361 vertical electric fields apply flat board
362 horizontal component of electric fields apply flat board
37 response characteristics to light proving installations
371 light sources
372 response characteristics to light test components
3721 optical fiber
3722 fibre-optical probes
3723 movable supporting frames
3724 interfaces
38 broadband signal device for testing and analyzing
381 signal generation devices
3811 high frequency network analysers
3812 voltage sources
3813 current sources
382 signal transmitting apparatus
3821 high frequency probe arms
38,211 first feeler arms
38,212 second feeler arms
3822 low frequency feeler arms
3823 feeler arm travel mechanisms
38231 three-dimensional machinery moving-members
38232 three-dimensional piezoelectricity moving-members
38233 corrugated tubes
3824 probes
3825 probe detent mechanisms
383 signal analysis devices
4 samples
Embodiment
Below in conjunction with accompanying drawing the structural principle and the principle of work of the utility model are done concrete description:
The utility model will measure magnetic field be incorporated into have SEM imaging or the graphical function of EBL sample stage on, realize magnetic responsiveness characteristic test to tested nano material or device.Referring to Fig. 1, Fig. 2 and Fig. 3, Fig. 1 is the structured flowchart of the utility model, and Fig. 2 is the structured flowchart of the utility model one examples measure device, and Fig. 3 is the imaging device fundamental diagram of the utility model.Nano patterning of the utility model and ultra broadband electromagnetical characteristic measuring system; Comprise power supply 1, control device 2 and measurement mechanism 3; Said control device 2 is connected with said measurement mechanism 3; Said control device 2 is connected with said power supply 1 respectively with said measurement mechanism 3; Said measurement mechanism 3 comprises imaging device 31, vacuum chamber 32, vacuum system 33, sample stage 34 and the magnetic responsiveness characteristic test device 35 with SEM imaging or the graphical function of EBL; Said vacuum system 33 is connected with said vacuum chamber 32, and said imaging device 31, said sample stage 34 and said magnetic responsiveness characteristic test device 35 all are arranged in the said vacuum chamber 32, and said imaging device 31 and said magnetic responsiveness characteristic test device 35 are provided with corresponding to said sample stage 34.Wherein, The imaging device 31 of the utility model comprises electron gun 311 and secondary electron detector 312; The principle of its SEM imaging or the graphical function of EBL is as shown in Figure 3, because of the structure and the principle thereof of this imaging device is ripe prior art, do not do at this and gives unnecessary details.Above-mentioned imaging device 31, vacuum chamber 32, vacuum system 33 and sample stage 34 with SEM imaging or the graphical function of EBL also can directly adopt the experiment or the technical grade EBL equipment that have had mature technology at present.This EBL equipment comprises three essential parts: (the beam current measurement device is used for the electronic beam current size of measuring exposed to other accessories such as electron gun, electronic lens and electronic deflection device; The reflection electronic measurement mechanism is used for the alignment mark on observation sample surface; Workbench is used for placing and the moving exposure sample; Vacuum system; High-voltage power supply; The computer graphical generator is used for converting graph data into control deflector electric signal).Electron-beam exposure system can be divided into Gaussian beam (or circular beam) and distortion bundle (or RECTANGULAR BEAM) according to the shape of electron beam.Wherein Gaussian beam is that Gaussian function is gained the name because of the distribution of current in the circular beam spot.Gaussian beam electron exposure system is a kind of vector scan formula exposure system, have higher resolution, but its sweep velocity is more much lower than grating scanning type.Wherein representative is the Raith150 electron-beam exposure system of the Raith company of Germany, and it has ESEM and two kinds of functions of electron beam exposure concurrently, and minimum beam diameter is 4 nanometers.Its principal character is to comprise the adjustable electron gun of energy, and electron energy is from 5keV to 300keV; Have the magnetic lens group of electron beam focusing function and the secondary electron detector of SEM imaging function; Electron beam control electrode that is used for the electron-beam direct writing function and corresponding software with electron beam focusing and deflection; Have that can to reach 1 inch or above, bearing accuracy in the scope that the horizontal two-dimension direction moves arbitrarily be the sample stage of 10 nanometers, the sample stage size is 1 to 12 inch; The cavity back of the body end vacuum tightness at electron beam and sample place is superior to 10-5Pa.Equipment all in the utility model link to each other through GPIB line 23, through the control of the Control Software in the main control system 22 of control device 2, operate through control panel 21.Because of its structure and function are ripe prior art, do not give unnecessary details at this.
Referring to Fig. 4 and Fig. 5 A, Fig. 4 is the structural representation of the utility model one embodiment, the vacuum chamber inner structure synoptic diagram of Fig. 5 A the utility model one embodiment.In the present embodiment; Said magnetic responsiveness characteristic test device 35 comprises support 351 and is installed in the field generator for magnetic 352 and magnetic field travel mechanism 353 on the said support 351; Said field generator for magnetic 352 comprises coil 3521 and magnetic conduction magnetic pole 3522, and said magnetic conduction magnetic pole 3522 is connected with said magnetic field travel mechanism 353.Wherein, said magnetic conduction magnetic pole 3522 is preferably soft magnetic material pyramidal structure part, because its magnetization and demagnetization easily has very high magnetic permeability, can play and strengthen magnetic field intensity and the effect that reduces remanent magnetism.Said soft magnetic material is preferably NiFe alloy, siliconized plate or soft magnetic ferrite.Said coil 3521 is preferably a pair of Helmholtz coils 3521.In the present embodiment, this magnetic field is produced by a pair of Helmholtz coils in the vacuum chamber 3521, and the magnetic conduction magnetic pole of making through the soft magnetic material with pyramidal structure 3522, and magnetic field is delivered to around the sample stage 34 effectively.The direction in magnetic field and size are to control with the direct supply that changes size continuously through changing direction, and its scope is for can set as required, and the magnetic field maximum amplitude is controlled at 500 Oe to 5000 Oe.Whole Helmholtz coils and soft magnetic conduction magnetic pole are covered by the magnetic field shielding cover, and radome adopts the ferromagnetic material of high magnetic permeability to make radome.In addition; Close in the field supply source with the magnetic conduction magnetic pole no the time, the magnet shielding baffle plate that is provided with at the front end of magnet radome is in closed condition, to reach best magnetic field shielding effect; And then avoid the influence of magnetic conduction magnetic pole remanent magnetism and stray magnetic field effectively to electron beam, like Fig. 5 B.When measure using externally-applied magnetic field, magnet shielding baffle plate is opened, and soft magnetic conduction magnetic pole can move out and near sample stage 34.Adopt the stepper motor device to control moving of magnetic conduction magnetic pole, to realize continuously and accurate and adjustable.
Said Helmholtz coils is by the conductive filament coiling of high conductivity, and diameter of wire is 0.2 to 2mm, and coil turn and diameter can be confirmed in magnetic field as required.Said coil periphery can be cooled off with the cyclic water jacket parcel.Said magnetic pole has conical structure, and electrode tip is designed to concave, makes can and produce uniform magnetic field with the density of line of magnetic force raising near sample stage one end.Said soft magnetic material is the material with high magnetic permeability, little remanent magnetism, and preferred pure iron and mild carbon steel, iron Si system alloy, iron aluminum series alloy, iron sial are that alloy, ferronickel are that alloy, iron cobalt are alloy, soft magnetic ferrite, amorphous soft magnetic alloy, the particle size super-microcrystalline soft magnetic alloy about 50nm.Said soft magnetic core carbon electrode is controlled by the mechanical transmission device of step motor control, is free to put in and withdraw from, and scope is 10 to 50cm, and it moves by corresponding software and program and controls.
In the present embodiment; Magnetic conduction magnetic pole 3522 can be by mechanical hook-up (for example stepper motor or hydraulic pump) control near sample or away from sample; When the needs externally-applied magnetic field, its magnetic head can move and near sample stage 34, the current source of Helmholtz coils provides electric current to apply magnetic field simultaneously; Do not need magnetic field or utilize electron beam directly to write or when forming images; Magnetic conduction magnetic pole 3522 falls back on the position away from sample stage 34, closes the current source that is used to apply magnetic field simultaneously, simultaneously; Can also take electromagnetic shielding measure, to guarantee not influence controlling that electron beam refers to write or form images.Said magnetic responsiveness characteristic test device 35 also comprises magnetic field shielding mechanism 354, and said magnetic field shielding mechanism 354 is installed on the said support 351 and corresponding to said sample stage 34 and is provided with (referring to Fig. 5 B.Fig. 5 C).In the present embodiment, said magnetic field shielding mechanism 354 is preferably magnetic field shielding cover or magnetic field shielding plate.
Referring to Fig. 6 A and Fig. 6 B, Fig. 6 A is the vertical electric field response characteristics testing device structural representation of the utility model one embodiment, and Fig. 6 B is the horizontal component of electric field response characteristics testing device structural representation of the utility model one embodiment.The measurement mechanism 3 of the utility model also can comprise electric field response characteristic proving installation 36, and said electric field response characteristic proving installation 36 is arranged in the said vacuum chamber 32 and is arranged on said sample stage 34 tops.In the present embodiment; Said electric field response characteristic proving installation 36 comprise vertical electric field apply dull and stereotyped 361 and/or horizontal component of electric field apply dull and stereotyped 362 and dull and stereotyped travel mechanism (figure does not show), said vertical electric field apply dull and stereotyped 361 and/or horizontal component of electric field apply dull and stereotyped 362 and be connected with said dull and stereotyped travel mechanism respectively.Said horizontal component of electric field applies flat board 362 and/or vertical electric field applies flat board 361, and the electric field that applies with plane or vertical direction is incorporated on the sample stage 34 respectively, realizes the test to the electric field response characteristic of nano material and device.This horizontal component of electric field applies flat board 362 and/or vertical electric field applies a pair of relatively-movable metal plate electrode that flat board 361 can be respectively in vacuum chamber 32; Perhaps an identical shaped size and metal plate electrode movably are set with metallic conduction sample stage 34 corresponding tops; Can produce horizontal component of electric field or vertical electric field respectively through applying voltage; The voltage that applies can 0 to 110V or 220V between, perhaps apply higher voltage (producing more highfield) according to the test needs.Voltage can be DC voltage, also can be alternating voltage (electric field of generation can be a steady electric field, also can be alternating electric field).Under the situation that does not need extra electric field; Move and draw back this vertical electric field that horizontal component of electric field applies flat board 362 or lifting top is applied dull and stereotyped 361; Make its chamber mural margin that retreats to vacuum chamber 32, get final product away from the central area of sample stage 34 and the work of vacuum chamber electron beam.In order to reduce the influence that metal sample platform opposite internal electric field distributes; Can be utilized in the VTOL (vertical take off and landing) small sample platform 342 that rises in the middle of the sample stage 34 and hold up sample 4; Insert between two metal electrodes, utilize two metal plate electrodes to apply the face internal electric field again, shown in Fig. 6 B
Horizontal component of electric field is applied dull and stereotyped 362 spacing through regulating this; Perhaps through regulate the top movably vertical electric field apply dull and stereotyped 361 and sample stage 34 between distance, also can be further the size of the electric field value that adjusting is applied nano material and device under constant voltage.Certainly, also can be after selected two metal plate distance between electrodes, through changing the size that the impressed voltage value is regulated the electric field that applies.
Said vertical electric field through metal sample platform 34 and with it corresponding directly over an identical shaped size and transportable metal plate electrode vertical electric field apply and apply voltage between the flat board 361 and realize, spacing between the two is adjustable (＜10cm).Under the situation that does not need vertical electric field, can the vertical electric field of top be applied dull and stereotyped 361 vertical-lifts again level shift out the measurement range of sample stage 34.Vertical electric field applies dull and stereotyped 361 size and can adjust according to actual needs, with shape and measure-alike (between 1-12 cun) of test sample platform 34, can form the most uniform vertical electric field so usually.
Above-mentioned vertical electric field applies dull and stereotyped 361 can apply voltage through two kinds of methods: a kind of is when probe carries out in-situ test, carries out applying of voltage (electric field); Another kind method is, in order to reduce the influence of probe to Electric Field Distribution itself, can be earlier sample applied electric field, removes movably metal plate electrode again, and then carry out the magneto-electric behavior test of nano material or device.But a kind of method in back only limits to electromagnetic field is responded nano material or the device that memory effect is arranged.Referring to Fig. 7, Fig. 7 is the response characteristics to light proving installation structural representation of the utility model one embodiment.The measurement mechanism 3 of the utility model also can comprise response characteristics to light proving installation 37, and said response characteristics to light proving installation 37 is arranged in the said vacuum chamber 32.In the present embodiment; Said response characteristics to light proving installation 37 comprises light source 371 and response characteristics to light test component 372; Said response characteristics to light test component 372 is arranged in the said vacuum chamber 32; Can with light beam (light wave/light field that comprises frequency ranges such as laser, infrared and ultraviolet) introduce in the vacuum chamber 32 and irradiation on sample 4, realize the response characteristics to light of tested nano material and device is tested.Wherein, Said response characteristics to light test component 372 comprises optical fiber 3721, fibre-optical probe 3722 and movable supporting frame 3723; Said optical fiber 3,721 one ends are connected with said light source 371; Said optical fiber 3721 gets into vacuum chamber 32 through the chamber wall that interface 3724 passes vacuum chamber 32, and the other end of said optical fiber 3721 is connected with said fibre-optical probe 3722, and light beam is to transmit through the optical fiber 3721 that imports in the vacuum chamber 32; Said fibre-optical probe 3722 is installed on the said movable supporting frame 3723, and said movable supporting frame 3723 is arranged in the said vacuum chamber 32 corresponding to said sample stage 34.The light beam that laser or other light source produce imports in the vacuum chamber 32 through optical fiber 3721 and guides to the surface of sample 4.Wherein, introduce light wavelength, intensity and monochromaticity etc. and can dispose different light source or laser instrument according to the optical radiation or the light activated different needs of testing sample 4.Need not study under photoirradiation and the light activated situation, this optical fiber 3721, fibre-optical probe 3722 can move away near the chamber wall of vacuum chamber 32 through movable supporting frame 3723, refer to write and SEM imaging center zone away from electron beam (EBL).
Referring to Fig. 4; The measurement mechanism 3 of the utility model also can comprise broadband signal device for testing and analyzing 38; Can broadband signal (0 to 10,20,40,60 or 100GHz scope) be introduced in the vacuum chamber 32, and include signal transmission, import and export and functions such as test and analysis.Wherein,, can dispose the input of the signal of different frequency bands, for example be lower than the radiofrequency signal of 300MHz or be higher than the high-frequency signal of 300MHz up to 100GHz to the needs of unlike signal.Wherein, the importing of high-frequency signal and derive and to realize through the removable high frequency probe arm 3821 that comprises particular design, and can be applied on nanostructured or the device through high frequency probe 3824, and then accomplish applying and surveying of high-frequency signal.The importing of low frequency signal and derive and to realize, and can being applied on nanostructured and the device, and then the applying and surveying of completion low frequency and direct current signal through probe 3824 through removable low frequency feeler arm 3822.Said broadband signal device for testing and analyzing 38 comprises signal generation device 381, signal transmitting apparatus 382 and signal analysis device 383; Said signal generation device 381 and said signal analysis device 383 are connected with said signal transmitting apparatus 382 respectively, and said signal transmitting apparatus 382 is connected with said vacuum chamber 32 and is provided with corresponding to said sample stage 34.In the present embodiment; Said signal transmitting apparatus 382 comprises high frequency probe arm 3821 and/or low frequency feeler arm 3822, feeler arm travel mechanism 3823 and probe 3824; Said high frequency probe arm 3821 and/or low frequency feeler arm 3822 are connected with said feeler arm travel mechanism 3823, and said probe 3824 is installed in the front end of said high frequency probe arm 3821 and/or low frequency feeler arm 3822.Said feeler arm travel mechanism 3823 comprises three-dimensional machinery moving-member 38231 and three-dimensional piezoelectricity moving-member 38232; Each high frequency probe arm 3821 and/or low frequency feeler arm 3822 can move separately; Three-dimensional machinery moving-member 38231 can be realized feeler arm fast moving within the specific limits, and the SEM imaging function in the binding cavity can be realized fast, locate on a large scale.Through three-dimensional piezoelectricity moving-member 38232, the SEM imaging function in the binding cavity can be realized 10 nano level accurate location then.Wherein four probes 3824 can also can be two high frequency probes and two common probes simultaneously for high-frequency signal input, output probe as required.In the time need not carrying out high frequency measurement, probe 3824 also can be changed to common probe.Through high frequency probe, can high-frequency signal directly be exported in the nanoscale devices, and can directly from nanoscale devices, obtain high-frequency signal.Can carry out the measurement of low frequency or direct current signal through common probe.Said probe 3824 structures are come concrete the setting according to the sample of being tested 4 characteristics.Be used for the probe that ultra wide frequency ranges electromagnetic property is measured, its needle point structure is basic ground-signal-ground (GSG) structure, and probe pin angular separation can be selected between 50 nanometers to 100 micron.
Referring to Fig. 8, Fig. 8 is the high frequency probe arm configuration synoptic diagram of the utility model one embodiment.In the present embodiment; Said high frequency probe arm 3821 comprises first feeler arm 38211 and second feeler arm 38212; Said three-dimensional machinery moving-member 38231 is connected with said first feeler arm 38211 through corrugated tube 38233, is connected through said three-dimensional piezoelectricity moving-member 38232 between said first feeler arm 38211 and said second feeler arm 38212.Said three-dimensional machinery moving-member 38231 drives can realize that sample moves fast in 1 to 12 inch scope, and 38232 drivings of three-dimensional piezoelectricity moving-member can realize nano level accurate location.
Said signal transmitting apparatus 382 also can comprise probe detent mechanism 3825, and said probe detent mechanism 3825 is installed on said high frequency probe arm 3821 and/or the low frequency feeler arm 3822, and said probe detent mechanism 3825 is connected with said control device 2.In the present embodiment, this probe detent mechanism 3825 is preferably pressure transducer and/or conductive sensor, and with contacting of control probe 3824 and sample 4 surfaces, pressure transducer detects the contact force of needle point and sample surfaces, can not cause damage to needle point and sample.Stop pin down through control device 2 control feeler arm travel mechanisms after reaching predetermined value, to guarantee that sample 4 is not damaged (referring to Fig. 8); Conductive sensor is used for the control (referring to Fig. 9) of the following pin process of testing conductive sample 4, for the sample and the device of conduction, and under sample can not be because of situation about damaging through weak current, can adopt conductive sensor.When the sample surface in contact, the electric current that conductive sensor produces can be got into sample and constituted the loop by needle point, and comes out through voltage detection, realizes the contact force of control needle point and sample.Through between the needle point of probe 3824 and sample 4, adding a small voltage in advance,, conducting between it just can think that the needle point of probe 3824 and sample 4 have had good Ohmic contact when promptly having electric current to show.
Said signal generation device 381 comprises high frequency network analyser 3811, voltage source 3812 and current source 3813, and said high frequency probe arm 3821 and/or low frequency probe 3824 arms 3822 are connected with said high frequency network analyser 3811, said voltage source 3812 and said current source 3813 respectively.
Said signal analysis device 383 comprises frequency spectrograph, and said frequency spectrograph is connected with said high frequency probe 3824 arms 3821 and/or low frequency probe 3824 arms 3822 and said control device 2 respectively.
Above-mentioned high broadband signal produces, measures and analyze all and can accomplish (frequency is up to 100GHz, can be configured according to user's the demand and the signal of different frequency range) by high frequency network analyser 3811 and frequency spectrograph.Above-mentioned high-frequency signal can use commercial high-frequency signal source, is produced by quartz crystal oscillator usually or the generation of semicoductor capacitor inductance (RLC) oscillator; (for example application number is the disclosed microwave oscillator of Chinese invention patent application of " 200810222965.X " for " 200810119751.X " and application number, and its high-frequency range is 500M--20GHz also can to select to use spin oscillator based on nanometer ring-type MTJ.Because its device size is easy to integrated for a short time; Frequency can be through characteristics such as dc signal or magnetic field regulation and control; Not only can be used for all kinds of high-frequency elements such as microwave generator and detector, wireless communication system, airborne radar signal generator, computer CPU system, also can be used among the high-frequency signal generation source apparatus of the utility model).The generation of above-mentioned low frequency and direct current signal, measurement and analysis all can be adopted high-precision lock-in amplifier (like model SR830), nanovoltmeter (like Keithley 2182A) and the completion such as (like Keithleys 2600) of current source table.Line can be selected the concentric cable lead with noise suppression effect for use.
Also be provided with sample stage travel mechanism 341 in the said vacuum chamber 32, to realize moving and accurately locating of sample on a large scale.Said sample stage 34 is installed in the said sample stage travel mechanism 341, and said sample stage travel mechanism 341 is connected with said control device 2.In addition, sample stage 34 also can dispose VTOL (vertical take off and landing) small sample platform 342 (referring to Fig. 6 B).Sample 4 moving through and to realize through sample stage travel mechanism 341 in a big way.Simultaneously, high frequency probe arm 3821 can realize that also narrow machinery moves and the nanoscale of Piezoelectric Ceramic accurately moves.
The utlity model has electronic transport and the detectability of magneto-electric behavior test function and high-frequency magnetoelectric signal under the regulation and control of micro-nano processing and imaging, electric field and magnetic field; Because its functional integration is high; And be easy to realize devices in batches test fast; Therefore, semiconductor, microelectronics, magnetoelectricity, the material of spintronics and the measurement and the research field of device thereof be can be widely used in, the batch detection and the quality supervision of the associated electrical product in the information industry also can be widely used in.
The utility model can overcome the deficiency of prior art well; Only need carry out the nanoprocessing of simple or less step to required nano material or device; Just can under the guiding of EBL imaging, probe be positioned, directly with tested nanostructured or device contacts.Utilize stepper motor to control to measure the magnetic core electrode in magnetic field or the plate electrode of electric field again, magnetic field or electric field evenly are applied to the central area of about a square inch (can determine the scope of uniform magnetic field or electric field) on the observation platform according to demand; Automatically close EBL image-forming electron bundle then, switch to original position and carry out the magneto-electric behavior test control system in the broad frequency range, comprise that direct current and low frequency magnetoelectricity transport test, generation, transmission and test of high frequency (GHz) signal or the like.Because this measurement can be selected sample to be tested by direct in-situ; And feeler arm and sample stage can be on a large scale in relative to moving; Therefore therefore hot-wire array formula nanostructured or nano-device efficiently have advantages such as speed is fast, the cycle is short, efficient is high, the test chance of success is big.This in-situ test is applicable to that equally also industry goes up aspects such as batch detection and the quality monitoring of high-frequency semiconductor device or magnetic electron device and product.
Certainly; The utility model also can have other various embodiments; Under the situation that does not deviate from the utility model spirit and essence thereof; Those of ordinary skill in the art work as can make various corresponding changes and distortion according to the utility model, but these corresponding changes and distortion all should belong to the protection domain of the appended claim of the utility model.
Claims (22)
1. a nano patterning and ultra broadband electromagnetical characteristic measuring system; Comprise power supply, control device and measurement mechanism; Said control device is connected with said measurement mechanism; Said control device is connected with said power supply respectively with said measurement mechanism; It is characterized in that said measurement mechanism comprises imaging device, vacuum chamber, vacuum system, sample stage and the magnetic responsiveness characteristic test device with SEM imaging or the graphical function of EBL, said vacuum system is connected with said vacuum chamber; Said imaging device, said sample stage and said magnetic responsiveness characteristic test device all are arranged in the said vacuum chamber, and said imaging device and said magnetic responsiveness characteristic test device are corresponding to said sample stage setting.
2. nano patterning as claimed in claim 1 and ultra broadband electromagnetical characteristic measuring system; It is characterized in that; Said magnetic responsiveness characteristic test device comprises support and is installed in field generator for magnetic, magnetic field travel mechanism and the magnetic field shielding mechanism on the said support; Said field generator for magnetic comprises coil and magnetic conduction magnetic pole, and said magnetic conduction magnetic pole is connected with said magnetic field travel mechanism, and said magnetic field shielding mechanism is installed on the said support and corresponding to said sample stage setting.
3. according to claim 1 or claim 2 nano patterning and ultra broadband electromagnetical characteristic measuring system; It is characterized in that; Also comprise the electric field response characteristic proving installation, said electric field response characteristic proving installation is arranged in the said vacuum chamber and is arranged on said sample stage top.
4. nano patterning as claimed in claim 3 and ultra broadband electromagnetical characteristic measuring system; It is characterized in that; Said electric field response characteristic proving installation comprises that vertical electric field applies flat board and/or horizontal component of electric field applies flat board and dull and stereotyped travel mechanism, and said vertical electric field applies flat board and/or horizontal component of electric field and applies flat board and be connected with said dull and stereotyped travel mechanism respectively.
5. according to claim 1 or claim 2 nano patterning and ultra broadband electromagnetical characteristic measuring system; It is characterized in that; Also comprise the response characteristics to light proving installation; Said response characteristics to light proving installation comprises light source and response characteristics to light test component, and said response characteristics to light test component is arranged in the said vacuum chamber.
6. nano patterning as claimed in claim 4 and ultra broadband electromagnetical characteristic measuring system; It is characterized in that; Also comprise the response characteristics to light proving installation; Said response characteristics to light proving installation comprises light source and response characteristics to light test component, and said response characteristics to light test component is arranged in the said vacuum chamber.
7. according to claim 1 or claim 2 nano patterning and ultra broadband electromagnetical characteristic measuring system; It is characterized in that; Also comprise the broadband signal device for testing and analyzing; Said broadband signal device for testing and analyzing comprises signal generation device, signal transmitting apparatus and signal analysis device, and said signal generation device and said signal analysis device are connected with said signal transmitting apparatus respectively, and said signal transmitting apparatus is connected with said vacuum chamber and corresponding to said sample stage setting.
8. nano patterning as claimed in claim 4 and ultra broadband electromagnetical characteristic measuring system; It is characterized in that; Also comprise the broadband signal device for testing and analyzing; Said broadband signal device for testing and analyzing comprises signal generation device, signal transmitting apparatus and signal analysis device, and said signal generation device and said signal analysis device are connected with said signal transmitting apparatus respectively, and said signal transmitting apparatus is connected with said vacuum chamber and corresponding to said sample stage setting.
9. nano patterning as claimed in claim 7 and ultra broadband electromagnetical characteristic measuring system; It is characterized in that; Said signal transmitting apparatus comprises high frequency probe arm and/or low frequency feeler arm, feeler arm travel mechanism and probe; Said high frequency probe arm and/or low frequency feeler arm are connected with said feeler arm travel mechanism, and said probe is installed in the front end of said high frequency probe arm and/or low frequency feeler arm.
10. nano patterning as claimed in claim 8 and ultra broadband electromagnetical characteristic measuring system; It is characterized in that; Said signal transmitting apparatus comprises high frequency probe arm and/or low frequency feeler arm, feeler arm travel mechanism and probe; Said high frequency probe arm and/or low frequency feeler arm are connected with said feeler arm travel mechanism, and said probe is installed in the front end of said high frequency probe arm and/or low frequency feeler arm.
11. nano patterning as claimed in claim 9 and ultra broadband electromagnetical characteristic measuring system; It is characterized in that; Said signal transmitting apparatus also comprises the probe detent mechanism; Said probe detent mechanism is installed in the front end of said high frequency probe arm and/or low frequency feeler arm, and said probe detent mechanism is connected with said control device.
12. nano patterning as claimed in claim 10 and ultra broadband electromagnetical characteristic measuring system; It is characterized in that; Said signal transmitting apparatus also comprises the probe detent mechanism; Said probe detent mechanism is installed in the front end of said high frequency probe arm and/or low frequency feeler arm, and said probe detent mechanism is connected with said control device.
13. nano patterning as claimed in claim 9 and ultra broadband electromagnetical characteristic measuring system; It is characterized in that; Said signal generation device comprises high frequency network analyser, voltage source and current source, and said high frequency probe arm and/or low frequency feeler arm are connected with said high frequency network analyser, said voltage source and said current source respectively.
14. nano patterning as claimed in claim 10 and ultra broadband electromagnetical characteristic measuring system; It is characterized in that; Said signal generation device comprises high frequency network analyser, voltage source and current source, and said high frequency probe arm and/or low frequency feeler arm are connected with said high frequency network analyser, said voltage source and said current source respectively.
15. nano patterning according to claim 1 or claim 2 and ultra broadband electromagnetical characteristic measuring system; It is characterized in that; Also be provided with sample stage travel mechanism in the said vacuum chamber, said sample stage is installed in the said sample stage travel mechanism, and said sample stage travel mechanism is connected with said control device.
16. nano patterning as claimed in claim 4 and ultra broadband electromagnetical characteristic measuring system; It is characterized in that; Also be provided with sample stage travel mechanism in the said vacuum chamber, said sample stage is installed in the said sample stage travel mechanism, and said sample stage travel mechanism is connected with said control device.
17. nano patterning as claimed in claim 9 and ultra broadband electromagnetical characteristic measuring system; It is characterized in that; Also be provided with sample stage travel mechanism in the said vacuum chamber, said sample stage is installed in the said sample stage travel mechanism, and said sample stage travel mechanism is connected with said control device.
18. nano patterning as claimed in claim 10 and ultra broadband electromagnetical characteristic measuring system; It is characterized in that; Also be provided with sample stage travel mechanism in the said vacuum chamber, said sample stage is installed in the said sample stage travel mechanism, and said sample stage travel mechanism is connected with said control device.
19. nano patterning as claimed in claim 11 and ultra broadband electromagnetical characteristic measuring system; It is characterized in that; Also be provided with sample stage travel mechanism in the said vacuum chamber, said sample stage is installed in the said sample stage travel mechanism, and said sample stage travel mechanism is connected with said control device.
20. nano patterning as claimed in claim 12 and ultra broadband electromagnetical characteristic measuring system; It is characterized in that; Also be provided with sample stage travel mechanism in the said vacuum chamber, said sample stage is installed in the said sample stage travel mechanism, and said sample stage travel mechanism is connected with said control device.
21. nano patterning as claimed in claim 13 and ultra broadband electromagnetical characteristic measuring system; It is characterized in that; Also be provided with sample stage travel mechanism in the said vacuum chamber, said sample stage is installed in the said sample stage travel mechanism, and said sample stage travel mechanism is connected with said control device.
22. nano patterning as claimed in claim 14 and ultra broadband electromagnetical characteristic measuring system; It is characterized in that; Also be provided with sample stage travel mechanism in the said vacuum chamber, said sample stage is installed in the said sample stage travel mechanism, and said sample stage travel mechanism is connected with said control device.
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