CN108333121A - A kind of high frequency magneto-optic spectrometer - Google Patents
A kind of high frequency magneto-optic spectrometer Download PDFInfo
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- CN108333121A CN108333121A CN201810429133.9A CN201810429133A CN108333121A CN 108333121 A CN108333121 A CN 108333121A CN 201810429133 A CN201810429133 A CN 201810429133A CN 108333121 A CN108333121 A CN 108333121A
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- lens
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/21—Polarisation-affecting properties
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/27—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands using photo-electric detection ; circuits for computing concentration
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/21—Polarisation-affecting properties
- G01N2021/218—Measuring properties of electrooptical or magnetooptical media
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2201/00—Features of devices classified in G01N21/00
- G01N2201/06—Illumination; Optics
- G01N2201/067—Electro-optic, magneto-optic, acousto-optic elements
Abstract
The present invention relates to material surface Magnetic Measurement fields,A kind of high frequency magneto-optic spectrometer,Including pulse laser,Delayer,Quarter wave plate,Concavees lens,Convex lens I,Plane mirror,Polarizing film,Beam splitter,Convex lens II,Lens platform,Atomic force microscope I,Probe I,Lens mount,Object lens,Sample,Waveguide,Sample stage,Signal generator,Oscillograph,Detector,Bias-tee,Amplifier I,Frequency mixer,Amplifier II,Analog-digital converter,Computer,Atomic force microscope II,Probe I I,Phase sensitive detector,Single nanostructure can be measured,It is dynamic to the magnetization of sample surfaces to measure the spatial resolution that reach sub-micrometer scale,The magnetization information of nanoscale sample surfaces is obtained using high-precision positioning device,Contact mode afm scan and the experiment of near field time resolution Kerr magnetooptical effect are carried out respectively using two different atomic-force microscope needle-tips,And using frequency domain method detection sample surfaces ghz band magnetization dynamic.
Description
Technical field
The present invention relates to material surface Magnetic Measurement field, it is especially a kind of can be to the single nanostructure of material surface
A kind of high frequency magneto-optic spectrometer that high frequency dynamic magnetization measures.
Background technology
Kerr magnetooptical effect measuring device is a kind of important means in material surface magnetism research, and operation principle is base
Kerr magnetooptical effect caused by interaction, can not only carry out monoatomic layer thickness material between Yu Youguang and magnetized medium
Magnetic detection, and can realize non-contact measurement, the magnetic order of magnetic ultrathin film, magnetic anisotropy, layer coupling and
There is important application in the research of the transformation behavior of magnetic ultrathin film etc..Kerr magnetooptical effect measuring device mainly passes through
Detect the magnetization that light intensity variation caused by polarization state variation of a branch of linearly polarized light after material surface reflection carries out sample surfaces
Observation, therefore the effect of its imaging is highly prone to optical element limitation, prior art defect one：Traditional uses micro objective
The microscopical spatial resolutions of focusing Ke Er determined that therefore the magnetization for being unable to get nanoscale is dynamic by optical diffraction limit
State feature；Prior art defect two：The magnetization multidate information of upper frequency in sample, a kind of high frequency magneto-optic spectrum can not be obtained
Instrument can solve the problems, such as.
Invention content
To solve the above-mentioned problems, the present invention provides a kind of high frequency magneto-optic spectrometer, is obtained using high-precision positioning device
The magnetization information of nanoscale sample surfaces is obtained, and detects the magnetization dynamic of sample surfaces ghz band using frequency domain method.
The technical solution adopted in the present invention is：
A kind of high frequency magneto-optic spectrometer mainly include pulse laser, delayer, quarter wave plate, concavees lens, convex lens I,
Plane mirror, polarizing film, beam splitter, convex lens II, lens platform, atomic force microscope I, probe I, lens mount, object lens, sample, wave
It leads, sample stage, signal generator, oscillograph, light bridge detector, bias-tee, amplifier I, frequency mixer, amplifier II, modulus
Converter, computer, atomic force microscope II, probe I I, phase sensitive detector, sinusoidal signal generator, input path and reflection
Light path, there are one the polarizer at 45 degree of angles, the atomic force microscope II and atomic forces for the input terminal tool of the smooth bridge detector
Microscope I structures are identical, and the probe I is located at the lower ends atomic force microscope I, and the probe I I is located under atomic force microscope II
End, the object lens are located at lens mount lower end, the pulse laser, signal generator, waveguide, oscillograph cable connection successively,
Cable connects successively for the smooth bridge detector, bias-tee, amplifier I, frequency mixer, amplifier II, analog-digital converter, computer
It connects, the laser beam of the pulse laser transmitting is successively through delayer, quarter wave plate, concavees lens, convex lens I, plane mirror, polarization
Piece, beam splitter, convex lens II, lens platform, atomic force microscope I, probe I, to form input path, the laser beam irradiation
The reflected light generated to sample surfaces is successively through probe I, atomic force microscope I, lens platform, convex lens II, beam splitter, to shape
At reflected light path, the reflected light deflects to the smooth bridge detector by beam splitter, and the lens platform is light transmission disk and has
Central shaft, the atomic force microscope I, lens mount, atomic force microscope II are located at below lens platform and can be opposite
In the fine position of lens platform, when lens platform is rotated around central shaft, can respectively by atomic force microscope I or lens mount or
Atomic force microscope II is placed in right over sample (15), and the probe I I is contact-type atomic force microscope probe, and waveguide is located at
On sample stage, sample is directly contact prepared in by waveguide top surface by magnetically controlled sputter method, the probe I and probe I I are
The atomic force microscope probe and shape of identical appearance size are round platform, and the round platform axis is perpendicular to horizontal plane, the spy
There is truncated cone-shaped through-hole in needle I；The upper bottom surface of the shape round platform of the probe I and probe I I is 3 microns a diameter of, bottom surface
A diameter of 2 microns, the upper opening of the truncated cone-shaped through-hole in the probe I is 500 nanometers a diameter of, lower openings are a diameter of
900 nanometers, a diameter of ten centimetres of the lens platform；The waveguide is 80 microns a length of, width is 50 microns, thickness is 150 nanometers, special
It is 50 ohm to levy impedance；The sample is 10 microns a length of, width is 9 microns, thickness is 50 nanometers.
The smooth bridge detector output end is connected with a phase sensitive detector input terminal, the reference frequency of the phase sensitive detector
Rate is set as consistent with the output frequency of the signal generator, and phase sensitive detector output end connects bias-tee, sinusoidal signal
Generator output end connects mixer input II.The input terminal of the smooth bridge detector has the polarizer there are one 45 degree of angles,
Reflected light light intensity after the polarizer isWherein I0It is light intensity when reflected light reaches the polarizer,
θkIt is Keer rotation.The frequency mixer has two signal input parts of input terminal I and input terminal II.When reflective light intensity is to magnetic sample
The dependence of change is linear, can estimate the AC compounent δ I ≈ for magnetizing caused electric current by sample in light bridge detector
IDCθK0δmz, wherein θK0It is Keer rotation of sample under the conditions of magnetic saturation, δ mzIt is magnetized variation, I outside faceDCIt is that light bridge is visited
Survey the DC component of the electric current in device.
The present invention obtains the magnetization information of nanoscale sample surfaces using high-precision positioning device, that is, uses two
Different atomic-force microscope needle-tips carries out contact mode afm scan and near field time resolution magneto-optic gram respectively
That effect experiment, and the magnetization using frequency domain method to detect sample surfaces ghz band is dynamically, has higher spatial sensitivity,
Faster test speed, apparatus structure is simple, and probe service life is long.
The step of being measured using a kind of high frequency magneto-optic spectrometer be：
One, relay lens platforms make atomic force microscope II be located at right over sample, using probe I I to including in waveguide
The region of sample is scanned, and to obtain surface topography image, primarily determines sample position, when probe I I is located at sample edge
When, enable probe I I retract, and record each position parameter in atomic force microscope II；
Two, relay lens platforms make atomic force microscope I be located at right over sample, and each position recorded in step 1 is joined
Number input atomic force microscope I；
Three, approach probe I to sample surfaces, are then scanned to sample region using probe I, sweep speed
2nm/s stops approaching after detecting sample surfaces, and the distance 100nm that bounces back upwards, simultaneously closes off atomic force microscope
The scanning of I is fed back；
Four, adjust mirror position so that laser beam is mapped to by lens platform and atomic force microscope I in probe I；
Five, pulse lasers generate pulse laser, and the period is less than 100fs, repetitive rate 50MHz, wavelength 700nm, signal hair
The triggering waveform of raw device is synchronous with laser repetition rate；
Six, signal generators generate the RF electric currents that frequency is 1GHz and export to waveguide for exciting sample；
In the state of closing the scanning feedback of atomic force microscope I, setting probe I is scanned seven,；
The light beam that eight, are reflected from sample surfaces passes through probe I, atomic force microscope I, lens platform, convex lens II, divides successively
After beam device enter light bridge detector, the phase sensitive detector by enter light bridge detector signal in 1GHz frequencies pole to gram
You come out Signal separator, and export as an electrical current；
The AC compounent for the electric current that phase sensitive detector described in nine, exports is after amplifier I amplifications 30dB, input mixer
Input terminal I；
Sinusoidal signal generator frequency locking described in ten, generates the reference signal that frequency is f- Δs f, Δ f=to signal generator
3KHz, the input terminal II of the reference signal input mixer；
The mixed frequency signal frequency of 11, frequency mixers output is Δ f, and the mixed frequency signal, which is amplified device II, to be continued to amplify, most
It is sampled eventually by analog-digital converter；
12, computers record the signal exported by analog-digital converter, and implement in quick Fu to the signal in Δ f frequencies
Leaf transformation, and it is associated with the sample position data of atomic force microscope I acquisitions, to obtain the magnetic resonance figure of sample surfaces
Picture.
The beneficial effects of the invention are as follows：
The present invention can measure single nanostructure, and sub-micro can be reached by dynamically measuring the magnetization of sample surfaces
The spatial resolution of rice magnitude, has higher spatial sensitivity, device is simple, and test speed is fast.The probe I and probe I I are
The atomic force microscope probe of identical physical dimension carries out contact mode afm scan and near field time point respectively
Distinguish that Kerr magnetooptical effect is tested, advantage is to scan large-scale sample surfaces without using probe I, will not cause to receive in probe I
The damage in metrical scale aperture and influence experimental precision.
Description of the drawings
It is further illustrated with reference to the figure of the present invention：
Fig. 1 is schematic diagram of the present invention；
Fig. 2 is lens platform upward view.
In figure, 1. pulse lasers, 2. delayers, 3. quarter wave plates, 4. concavees lens, 5. convex lens I, 6. plane mirrors, 7.
Polarizing film, 8. beam splitters, 9. convex lens II, 10. lens platforms, 11. atomic force microscope I, 12. probe Is, 13. lens mounts, 14.
Object lens, 15. samples, 16. waveguides, 17. sample stages, 18. signal generators, 19. oscillographs, 20. smooth bridge detectors, 21. biasings
Threeway, 22. amplifier I, 23. frequency mixers, 24. amplifier II, 25. analog-digital converters, 26. computers, 27. atomic force microscope
II, 28. probe I I.
Specific implementation mode
If Fig. 1 is schematic diagram of the present invention, the pulse laser 1, signal generator 18, waveguide 16, oscillograph 19 are successively
Cable connection, the smooth bridge detector 20, bias-tee 21, amplifier I 22, frequency mixer 23, amplifier II 24, analog-to-digital conversion
Device 25, computer 26 cable connection successively, the laser beam that the pulse laser 1 emits successively through delayer 2, quarter wave plate 3,
Concavees lens 4, convex lens I 5, plane mirror 6, polarizing film 7, beam splitter 8, convex lens II 9, lens platform 10, atomic force microscope I
11, probe I 12, to form input path, the laser beam is irradiated to the reflected light of 15 surface of sample generation successively through probe
I 12, atomic force microscope I 11, lens platform 10, convex lens II9, beam splitter 8, to form reflected light path, the reflected light
The smooth bridge detector 20 is deflected to by beam splitter 8, the probe I I 28 is contact-type atomic force microscope probe, waveguide 16
On sample stage 17, sample 15 is directly contact prepared in by 16 upper surface of waveguide, the probe I by magnetically controlled sputter method
12 and probe I I 28 is the atomic force microscope probe of identical appearance size and shape is round platform, and the round platform axis is vertical
There is truncated cone-shaped through-hole in horizontal plane, the probe I 12；The shape round platform of the probe I 12 and probe I I 28
Upper bottom surface is 3 microns a diameter of, a diameter of 2 microns of bottom surface, the upper opening of the truncated cone-shaped through-hole in the probe I 12
A diameter of 500 nanometers, a diameter of 900 nanometers of lower openings, 10 a diameter of ten centimetres of the lens platform；The waveguide 16 a length of 80
Micron, width are 50 microns, thickness is 150 nanometers, and characteristic impedance is 50 ohm；15 a length of 10 microns of the sample, width are 9 micro-
Rice, thickness are 50 nanometers.
If Fig. 2 is lens platform upward view, the atomic force microscope II 27 is identical as 11 structures of atomic force microscope I,
The probe I 12 is located at 11 lower ends atomic force microscope I, and the probe I I 28 is located at 27 lower ends atomic force microscope II,
The object lens 14 are located at 13 lower end of lens mount, the probe I 12 and the atomic force microscopy that probe I I 28 is identical appearance size
Mirror probe, the lens platform 10 are light transmission disk and have central shaft, the atomic force microscope I 11, lens mount 13, atom
Force microscope II 27 is located at lens platform 10 below and can be relative to the fine position of lens platform 10, when lens platform 10
When being rotated around central shaft, atomic force microscope I 11 or lens mount 13 or atomic force microscope II 27 can be placed in respectively
Right over sample 15.
A kind of high frequency magneto-optic spectrometer includes mainly pulse laser 1, delayer 2, quarter wave plate 3, concavees lens 4, convex lens
Mirror I 5, plane mirror 6, polarizing film 7, beam splitter 8, convex lens II 9, lens platform 10, atomic force microscope I 11, probe I 12,
Lens mount 13, object lens 14, sample 15, waveguide 16, sample stage 17, signal generator 18, oscillograph 19, light bridge detector 20, partially
Set threeway 21, amplifier I 22, frequency mixer 23, amplifier II 24, analog-digital converter 25, computer 26, atomic force microscope II
27, probe I I 28, phase sensitive detector, sinusoidal signal generator, input path and reflected light path, the smooth bridge detector it is defeated
Enter end tool there are one the polarizer at 45 degree of angles, the atomic force microscope II 27 is identical as 11 structures of atomic force microscope I, institute
It states probe I 12 and is located at 11 lower ends atomic force microscope I, the probe I I 28 is located at 27 lower ends atomic force microscope II, institute
It states object lens 14 and is located at 13 lower end of lens mount, the pulse laser 1, signal generator 18, waveguide 16, oscillograph 19 cable successively
Connection, the smooth bridge detector 20, bias-tee 21, amplifier I 22, frequency mixer 23, amplifier II 24, analog-digital converter
25, the cable connection successively of computer 26, the laser beam that the pulse laser 1 emits is successively through delayer 2, quarter wave plate 3, recessed
Lens 4, convex lens I 5, plane mirror 6, polarizing film 7, beam splitter 8, convex lens II 9, lens platform 10, atomic force microscope I 11,
Probe I 12, to form input path, the laser beam is irradiated to the reflected light of 15 surface of sample generation successively through probe I
12, atomic force microscope I 11, lens platform 10, convex lens II9, beam splitter 8, to form reflected light path, the reflected light quilt
Beam splitter 8 deflects to the smooth bridge detector 20, and the lens platform 10 is light transmission disk and has central shaft, the atomic force aobvious
Micro mirror I 11, lens mount 13, atomic force microscope II 27 are located at lens platform 10 below and can be relative to lens platforms
10 fine position can be respectively by atomic force microscope I 11 or lens mount 13 when lens platform 10 is rotated around central shaft
Or atomic force microscope II 27 is placed in right over sample 15, the probe I I 28 is contact-type atomic force microscope probe, wave
It leads 16 to be located on sample stage 17, sample 15 is directly contact prepared in by 16 upper surface of waveguide by magnetically controlled sputter method, it is described
Probe I 12 and atomic force microscope probe and shape that probe I I 28 is identical appearance size are round platform, the round platform axis
Line has truncated cone-shaped through-hole in horizontal plane, the probe I 12；The shape of the probe I 12 and probe I I 28
The upper bottom surface of round platform is 3 microns a diameter of, a diameter of 2 microns of bottom surface, the truncated cone-shaped through-hole in the probe I 12 it is upper
Portion's opening diameter is 500 nanometers, a diameter of 900 nanometers of lower openings, 10 a diameter of ten centimetres of the lens platform；The waveguide 16
A length of 80 microns, width be 50 microns, thickness is 150 nanometers, characteristic impedance be 50 ohm；15 a length of 10 microns of the sample, width
It it is 50 nanometers for 9 microns, thickness.
Smooth 20 output end of bridge detector is connected with a phase sensitive detector input terminal, the reference of the phase sensitive detector
Set of frequency is consistent with the output frequency of the signal generator 18, and phase sensitive detector output end connects bias-tee, sinusoidal
Signal generator output end connects mixer input II.There are one the inclined of 45 degree of angles for the input terminal tool of the smooth bridge detector 20
Shake device, and reflected light light intensity after the polarizer isWherein I0When being that reflected light reaches the polarizer
Light intensity, θkIt is Keer rotation.The frequency mixer 23 has two signal input parts of input terminal I and input terminal II.Work as reflective light intensity
It is linear to the magnetized dependence of sample, can estimates the friendship for magnetizing caused electric current by sample in light bridge detector 20
Flow component δ I ≈ IDCθK0δmz, wherein θK0It is Keer rotation of sample under the conditions of magnetic saturation, δ mzIt is magnetized variation outside face,
IDCIt is the DC component of the electric current in light bridge detector.
The present invention obtains the magnetization information of nanoscale sample surfaces using high-precision positioning device, that is, uses two
Different atomic-force microscope needle-tips carries out contact mode afm scan and near field time resolution magneto-optic gram respectively
That effect experiment, and the magnetization using frequency domain method to detect sample surfaces ghz band is dynamically, has higher spatial sensitivity,
Faster test speed, apparatus structure is simple, and probe service life is long.
Claims (6)
1. a kind of high frequency magneto-optic spectrometer, it is characterized in that：Include mainly pulse laser, delayer, quarter wave plate, concavees lens, convex lens
Mirror I, plane mirror, polarizing film, beam splitter, convex lens II, lens platform, atomic force microscope I, probe I, lens mount, object lens, sample
Product, waveguide, sample stage, signal generator, oscillograph, light bridge detector, bias-tee, amplifier I, frequency mixer, amplifier II,
Analog-digital converter, computer, atomic force microscope II, probe I I, phase sensitive detector, sinusoidal signal generator, input path and
Reflected light path, the smooth bridge detector input terminal tool there are one 45 degree angles polarizer, the frequency mixer have input terminal I with
Input terminal II, the atomic force microscope II is identical as atomic force microscope I structures, and the probe I is located at atomic force microscope I
Lower end, the probe I I are located at the lower ends atomic force microscope II, and the object lens are located at lens mount lower end, the pulse laser,
Cable connection, the smooth bridge detector, amplifier I, frequency mixer, are put at bias-tee successively for signal generator, waveguide, oscillograph
Big device II, analog-digital converter, computer cable connection successively, the laser beam of the pulse laser transmitting successively through delayer,
Quarter wave plate, convex lens I, plane mirror, polarizing film, beam splitter, convex lens II, lens platform, atomic force microscope I, is visited concavees lens
Needle I, to form input path, the reflected light that the laser beam is irradiated to sample surfaces generation is aobvious through probe I, atomic force successively
Micro mirror I, lens platform, convex lens II, beam splitter, to form reflected light path, the reflected light deflects to the light by beam splitter
Bridge detector, the lens platform are light transmission disk and have central shaft, the atomic force microscope I, lens mount, atomic force microscopy
Mirror II is located at below lens platform and can be relative to the fine position of lens platform, when lens platform is rotated around central shaft
When, atomic force microscope I or lens mount or atomic force microscope II can be placed in right over sample respectively, the probe I I is
Contact-type atomic force microscope probe, waveguide are located on sample stage, are directly contact prepared sample by magnetically controlled sputter method
In waveguide top surface, the probe I and atomic force microscope probe and shape that probe I I is identical appearance size are circle
Platform, the round platform axis in horizontal plane, the probe I have truncated cone-shaped through-hole, the smooth bridge detector output end with
Phase sensitive detector input terminal is connected, and the reference frequency of the phase sensitive detector is set as the output frequency with the signal generator
Unanimously, phase sensitive detector output end connects bias-tee, and sinusoidal signal generator output end connects mixer input II.
2. a kind of high frequency magneto-optic spectrometer according to claim 1, it is characterized in that：The probe I and probe I I's is described outer
The upper bottom surface of shape round platform is 3 microns a diameter of, a diameter of 2 microns of bottom surface.
3. a kind of high frequency magneto-optic spectrometer according to claim 1, it is characterized in that：The truncated cone-shaped in the probe I is logical
The upper opening in hole is 500 nanometers a diameter of, a diameter of 900 nanometers of lower openings.
4. a kind of high frequency magneto-optic spectrometer according to claim 1, it is characterized in that：A diameter of ten centimetres of the lens platform.
5. a kind of high frequency magneto-optic spectrometer according to claim 1, it is characterized in that：The waveguide is 80 microns a length of, width 50
Micron, thickness are 150 nanometers, and characteristic impedance is 50 ohm.
6. a kind of high frequency magneto-optic spectrometer according to claim 1, it is characterized in that：The sample is 10 microns a length of, width is 9 micro-
Rice, thickness are 50 nanometers.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810429133.9A CN108333121A (en) | 2018-04-24 | 2018-04-24 | A kind of high frequency magneto-optic spectrometer |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810429133.9A CN108333121A (en) | 2018-04-24 | 2018-04-24 | A kind of high frequency magneto-optic spectrometer |
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| CN108333121A true CN108333121A (en) | 2018-07-27 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109115606A (en) * | 2018-09-06 | 2019-01-01 | 金华职业技术学院 | A kind of films test device |
| CN109374487A (en) * | 2018-10-10 | 2019-02-22 | 金华职业技术学院 | A kind of Ultrafast spectrum research device of microparticle |
-
2018
- 2018-04-24 CN CN201810429133.9A patent/CN108333121A/en not_active Withdrawn
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109115606A (en) * | 2018-09-06 | 2019-01-01 | 金华职业技术学院 | A kind of films test device |
| CN109115606B (en) * | 2018-09-06 | 2024-02-02 | 金华职业技术学院 | Film testing device |
| CN109374487A (en) * | 2018-10-10 | 2019-02-22 | 金华职业技术学院 | A kind of Ultrafast spectrum research device of microparticle |
| CN109374487B (en) * | 2018-10-10 | 2024-02-02 | 金华职业技术学院 | Ultra-fast spectrum research device for microparticles |
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Application publication date: 20180727 |