CN109115606A - A kind of films test device - Google Patents
A kind of films test device Download PDFInfo
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- CN109115606A CN109115606A CN201811083994.2A CN201811083994A CN109115606A CN 109115606 A CN109115606 A CN 109115606A CN 201811083994 A CN201811083994 A CN 201811083994A CN 109115606 A CN109115606 A CN 109115606A
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- 238000012360 testing method Methods 0.000 title claims abstract description 10
- 239000000523 sample Substances 0.000 claims abstract description 282
- 239000002184 metal Substances 0.000 claims abstract description 35
- 239000000835 fiber Substances 0.000 claims abstract description 29
- 230000003287 optical effect Effects 0.000 claims abstract description 29
- 238000006073 displacement reaction Methods 0.000 claims abstract description 21
- 230000005611 electricity Effects 0.000 claims description 10
- 238000002474 experimental method Methods 0.000 claims description 8
- 239000011521 glass Substances 0.000 claims description 5
- 230000005540 biological transmission Effects 0.000 claims description 4
- ZZUFCTLCJUWOSV-UHFFFAOYSA-N furosemide Chemical group C1=C(Cl)C(S(=O)(=O)N)=CC(C(O)=O)=C1NCC1=CC=CO1 ZZUFCTLCJUWOSV-UHFFFAOYSA-N 0.000 claims description 4
- 208000002173 dizziness Diseases 0.000 claims description 2
- 238000005259 measurement Methods 0.000 abstract description 14
- 238000000034 method Methods 0.000 abstract description 14
- 238000003384 imaging method Methods 0.000 abstract description 5
- 238000011065 in-situ storage Methods 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 3
- 239000000463 material Substances 0.000 abstract description 3
- 230000003993 interaction Effects 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000000418 atomic force spectrum Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N3/00—Investigating strength properties of solid materials by application of mechanical stress
- G01N3/08—Investigating strength properties of solid materials by application of mechanical stress by applying steady tensile or compressive forces
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L5/00—Apparatus for, or methods of, measuring force, work, mechanical power, or torque, specially adapted for specific purposes
- G01L5/16—Apparatus for, or methods of, measuring force, work, mechanical power, or torque, specially adapted for specific purposes for measuring several components of force
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
- G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
- G01R27/26—Measuring inductance or capacitance; Measuring quality factor, e.g. by using the resonance method; Measuring loss factor; Measuring dielectric constants ; Measuring impedance or related variables
- G01R27/2605—Measuring capacitance
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/12—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing
- G01R31/1227—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing of components, parts or materials
- G01R31/1263—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing of components, parts or materials of solid or fluid materials, e.g. insulation films, bulk material; of semiconductors or LV electronic components or parts; of cable, line or wire insulation
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2203/00—Investigating strength properties of solid materials by application of mechanical stress
- G01N2203/0058—Kind of property studied
- G01N2203/0069—Fatigue, creep, strain-stress relations or elastic constants
- G01N2203/0075—Strain-stress relations or elastic constants
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2203/00—Investigating strength properties of solid materials by application of mechanical stress
- G01N2203/02—Details not specific for a particular testing method
- G01N2203/06—Indicating or recording means; Sensing means
- G01N2203/067—Parameter measured for estimating the property
- G01N2203/0676—Force, weight, load, energy, speed or acceleration
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2203/00—Investigating strength properties of solid materials by application of mechanical stress
- G01N2203/02—Details not specific for a particular testing method
- G01N2203/06—Indicating or recording means; Sensing means
- G01N2203/067—Parameter measured for estimating the property
- G01N2203/0682—Spatial dimension, e.g. length, area, angle
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Length Measuring Devices With Unspecified Measuring Means (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Abstract
The present invention relates to materials science fields, a kind of films test device, including fibre optical sensor, reflecting mirror, probe, lens probe, corona probe, high-voltage constant current source, metal cap, aperture plate, displacement platform, DC power supply, voltage source, sample stage, it is grounded ring electrode, main electrode, micro objective, computer, galvanometer and current controller, using the method for cantilever deviation and in conjunction with hemispherical lens probe, sample surfaces can be carried out with tangential and normal direction mechanical meaurement, tangential and normal direction mechanical meaurement can carried out to sample surfaces, the bulk modulus of sample can be calculated in conjunction with the real-time in-situ imaging carried out to sample, it is preferable to the effect for thering is the film surface of larger deformation quantity to be imaged, improve measurement accuracy, in addition, charging process when carrying out electrical measurement to film is very fast and easy to control, and it can pass through Corona charging mode carries out associated electrical measurement to film, can measure the mechanics and electrical properties of film simultaneously.
Description
Technical field
The present invention relates to materials science field, the one of especially a kind of mechanics that can measure film simultaneously and electrical properties
Kind films test device.
Background technique
Dielectric film material is widely used, and in the insulation for electronic device surface, needs to have Low dark curient rate and height
The electrology characteristics such as dielectric constant, meanwhile, the mechanical characteristic of film such as surface force has an important research significance, including normal direction and tangential
Deformation and frictional force imaging, still, the prior art is poor to the effect for having the film surface of larger deformation quantity to be imaged,
And the charging process carried out when electrical measurement to film is not easy to control, a kind of films test device is able to solve problem.
Summary of the invention
To solve the above-mentioned problems, the present invention can be while carrying out tangential and normal direction mechanical meaurement to sample surfaces
In situ imaging is carried out, and associated electrical measurement can be carried out to film by corona charging mode.
The technical scheme adopted by the invention is that:
A kind of films test device mainly includes fibre optical sensor I, reflecting mirror I, fibre optical sensor II, reflecting mirror
II, probe, lens probe, corona probe, high-voltage constant current source, metal cap, aperture plate, displacement platform, DC power supply, voltage source, sample,
Sample stage, ground connection ring electrode, main electrode, micro objective, computer, galvanometer and current controller, xyz are three-dimensional space seat
Mark system, the probe have front end and an end, the probe connected from front end to end by probe disk, cantilever and microdrive and
At microdrive can be mobile in the direction y, and minimum movement stepping is 60 nanometers, maximum moving range is 30 millimeters, maximum mobile
Rate be 2 mm/seconds, the probe disk be it is discoid, probe disk lower surface have probe position I, probe position II and probe position
III, the probe position I are located at probe distal end, probe position I can mounted lens probe, corona probe, probe position can be also installed
II can mounted lens probe, probe position III can install corona probe, lens probe can be switched to spy from probe position II
Corona probe can be switched to probe position I from probe position II to carry out experiment of machanics to carry out Experiments of Electricity, probe by needle position I
Disk upper surface is equipped with reflecting mirror II, and reflecting mirror II is parallel with xz plane, and probe disc side is equipped with reflecting mirror I, reflecting mirror I with
X/y plane is parallel；Fibre optical sensor I and fibre optical sensor II distinguishes cable connection computer, and the position of fibre optical sensor I is fixed
And reflecting mirror I is faced, reflecting mirror II is fixed and faced in the position of fibre optical sensor II, and lens tips of probes is a diameter
The hemispheric glass lens that range is 1.5 millimeters to 4 millimeters, corona probe cable connect high-voltage constant current source, and corona probe is long
It is 0.3 millimeter for 20 millimeters, diameter；It is sequentially installed with metal cap and aperture plate below the lens probe and corona probe of probe,
The metal cap and aperture plate are all connected to displacement platform, and displacement platform can control metal cap respectively and aperture plate is mobile, and metal cap passes through
Displacement platform cable connection DC power supply, metal cap are the cylindrical surfaces that length is 24 millimeters, basal diameter is 18 millimeters, cylindrical surface
In the y-direction, the square net that aperture plate is 2 millimeters by the side length that the metal wire that diameter is 0.2 millimeter forms, aperture plate leads to axis
Cross displacement platform cable connection voltage source, voltage source cable connection current controller；Sample stage is located at below aperture plate, and sample stage can
Moved in xz plane, minimum movement stepping is 60 nanometers, maximum moving range is 30 millimeters, maximum rate travel be 2 millimeters/
Second, sample stage bottom has ground connection ring electrode and main electrode, and the ground connection ring electrode outer diameter is 20 millimeters, internal diameter is 18 millimeters,
Disk that the main electrode is 14 millimeters of diameter and can light transmission, sample is located in sample stage, sample respectively be grounded ring electrode
It is contacted with main electrode, successively cable connection galvanometer, current controller and computer, micro objective are located at sample stage to main electrode
Lower section；The sample charging current I that galvanometer measures1It is input to current controller, preset sample charging current I in computer2It is defeated
Enter to current controller, current controller compares I1And I2Output feedback signal is applied to aperture plate to voltage source can control afterwards
On voltage.
Utilize a kind of method of the mechanical property measurement of films test device progress sample are as follows:
Lens probe is switched to the probe position I of probe by one,；
Two, control microdrive makes lens probe be moved to just contact sample surfaces；
Three, micro objectives record sample image in real time；
The measurement of four, normal force: control microdrive makes lens probe continue to apply pressure to sample surfaces, record reflection
The deviation of mirror I and reflecting mirror II obtain the interaction force of normal direction, and the sample drawing with micro objective record by computer
As being combined analysis, the relationship between sample surfaces deformation and normal force is obtained；
The measurement of five, tangential forces: control microdrive is to keep the normal force of lens probe and sample constant, normal force profile
For 4mN to 15mN, while controlling sample stage keeps it mobile in the direction z, and movement speed range is 1 to 10 micro- meter per second, and with it is micro-
The sample image of endoscope objective lens record is combined analysis, obtains the relationship of sample deformation and normal force and sample stage movement speed；
Six, are according to step 4 and step 5 as a result, and combining power between sample deformation, sample and lens probe, sample
Relationship between product mechanical characteristic obtains the bulk modulus of sample.
Utilize a kind of method of the electrical properties measurement of films test device progress sample are as follows:
Preparation process is as follows:
Corona probe is switched to the probe position I of probe by one,；
Aperture plate is moved to above sample at three millimeters of distances by two, control bit moving stage, and applies electricity to it by voltage source
Pressure, the voltage representative value are 50V；
Metal cap is moved to above aperture plate at four millimeters of distances by three, control bit moving stage, and is applied by DC power supply to it
Making alive, the voltage representative value are 1.5kV to 2.5kV；
Four, charge to sample: applying electric current to corona probe by high-voltage constant current source, electric current representative value is two microamperes；
The step of measuring the potential decay of sample surfaces is as follows:
One, presets sample charging current I in a computer2=0 and it is input to current controller, to change the electricity on aperture plate
Pressure, so that the sample charging current I that galvanometer measures1=0；
Two, preset sample charging current I in a computer2, current controller compares I1And I2Feedback signal is exported afterwards to electricity
Potential source starts to charge to sample to control the voltage being applied on aperture plate；
After three, mono- minute, sample charging current I is preset in a computer again2=0, the potential for starting sample surfaces declines
The measurement subtracted；
Four, pass through real time monitoring Vg(t) it changes with time to obtain the potential V (t) of sample surfaces.
The method for measuring the capacitor of sample is as follows:
When charging process is incipient, pass through calculatingIt obtains the capacitor of sample, passes through the total of film sample
Electric current isIts, JCIt (t) is the average value of conductive current density in sample, C is the sample of average area
The capacitance of film, when the time is close to zero, JC(t) it is similar to zero, simplification obtains J0=C (dV (t)/dt)0, by Vg(t)=
V(t)+VagObtain J0=C (dV (t)/dt)0, in this way, the capacitor of sample can be directly from aperture plate potential VagVariation in obtain.
The beneficial effects of the present invention are:
The present invention can carry out tangential and normal direction mechanical meaurement to sample surfaces, in conjunction with the real-time in-situ carried out to sample
Imaging can calculate the bulk modulus of sample, preferable to the effect for having the film surface of larger deformation quantity to be imaged,
Measurement accuracy is improved, in addition, the charging process carried out when electrical measurement to film is very fast and easy to control.
Detailed description of the invention
It is further illustrated below with reference to figure of the invention:
Fig. 1 is schematic side view of the present invention；
Fig. 2 is the bottom view of probe；
Fig. 3 is the side view of Fig. 2.
In figure, 1. fibre optical sensor I, 2. reflecting mirror I, 3. fibre optical sensor II, 4. reflecting mirror II, 5. pop one's head in, and 5-1. is visited
Dials, 5-1-1. probe position I, 5-1-2. probe position II, 5-1-3. probe position III, 5-2. cantilever, 5-3. microdrive, 6. thoroughly
Mirror probe, 7. corona probes, 8 high-voltage constant current source, 9. metal caps, 10. aperture plates, 11. displacement platforms, 12. DC power supplies, 13. voltages
Source, 14. samples, 15. sample stages, 16. ground connection ring electrodes, 17. main electrodes, 18. micro objectives, 19. computers, 20. electric currents
Meter, 21. current controllers.
Specific embodiment
If Fig. 1 is schematic side view of the present invention, xyz is three-dimensional coordinate system, mainly includes fibre optical sensor I (1), anti-
Penetrate mirror I (2), fibre optical sensor II (3), reflecting mirror II (4), probe (5), lens probe (6), corona probe (7), high voltage and constant current
Source (8), metal cap (9), aperture plate (10), displacement platform (11), DC power supply (12), voltage source (13), sample (14), sample stage
(15), ring electrode (16), main electrode (17), micro objective (18), computer (19), galvanometer (20) and current control are grounded
Device (21), fibre optical sensor I (1) and fibre optical sensor II (3) difference cable connection computer (19), fibre optical sensor I's (1)
Position is fixed and is faced reflecting mirror I (2), and the position of fibre optical sensor II (3) is fixed and faces reflecting mirror II (4), lens
Probe (6) top is the hemispheric glass lens that a diameter range is 1.5 millimeters to 4 millimeters, and corona probe (7) cable connects
It connects high-voltage constant current source (8), corona probe (7) is 20 millimeters a length of, diameter is 0.3 millimeter；The lens probe (6) and electricity of probe (5)
It is sequentially installed with metal cap (9) and aperture plate (10) below dizzy probe (7), the metal cap (9) and aperture plate (10) are all connected to
Displacement platform (11), displacement platform (11) can control metal cap (9) respectively and aperture plate (10) is mobile, and metal cap (9) passes through displacement platform
(11) cable connection DC power supply (12), metal cap (9) are the cylindrical surfaces that length is 24 millimeters, basal diameter is 18 millimeters, circle
The axis of cylinder in the y-direction, the square that aperture plate (10) is 2 millimeters by the side length that the metal wire that diameter is 0.2 millimeter forms
Grid, aperture plate (10) pass through displacement platform (11) cable connection voltage source (13), voltage source (13) cable connection current controller
(21)；Sample stage (15) is located at below aperture plate (10), and sample stage (15) can move in xz plane, and minimum movement stepping is 60
Nanometer, maximum moving range are 30 millimeters, maximum rate travel is 2 mm/seconds, and sample stage (15) bottom has ground connection ring electrode
(16) and main electrode (17), ground connection ring electrode (16) outer diameter is 20 millimeters, internal diameter is 18 millimeters, and the main electrode (17) is
The disk that 14 millimeter of diameter and can light transmission, sample (14) is located in sample stage (15), sample (14) respectively with ground connection ring electrode
(16) it is contacted with main electrode (17), main electrode (17) successively cable connection galvanometer (20), current controller (21) and computer
(19), micro objective (18) is located at below sample stage (15)；Sample (14) charging current I that galvanometer (20) measures1Input
To current controller (21), preset sample (14) charging current I in computer (19)2It is input to current controller (21), electricity
Stream controller (21) compares I1And I2Output feedback signal is applied on aperture plate (10) to voltage source (13) with that can control afterwards
Voltage.
If Fig. 2 is the bottom view of probe, if Fig. 3 is the side view of Fig. 2, xyz is three-dimensional coordinate system, the probe
(5) there is front end and end, the probe (5) is from front end to end by probe disk (5-1), cantilever (5-2) and microdrive (5-
3) it is formed by connecting, microdrive (5-3) can be mobile in the direction y, and minimum movement stepping is 60 nanometers, maximum moving range is 30
Millimeter, maximum rate travel are 2 mm/seconds, the probe disk (5-1) be it is discoid, the probe disk lower surface (5-1) has probe
Position I (5-1-1), probe position II (5-1-2) and probe position III (5-1-3), before the probe position I (5-1-1) is located at probe (5)
End, probe position I (5-1-1) can mounted lens probe (6), can also install corona probe (7), probe position II (5-1-2) energy
Enough mounted lens probe (6), probe position III (5-1-3) can install corona probe (7), can be by lens probe (6) from probe
Position II (5-1-2) switches to probe position I (5-1-1) to carry out experiment of machanics, can be by corona probe (7) from probe position II (5-
Switch to probe position I (5-1-1) 1-2) to carry out Experiments of Electricity, the upper surface probe disk (5-1) is equipped with reflecting mirror II (4), instead
It is parallel with xz plane to penetrate mirror II (4), the side probe disk (5-1) is equipped with reflecting mirror I (2), and reflecting mirror I (2) is parallel with x/y plane.
Electrical measurement principle:
High-voltage constant current source (8) to corona probe (7) apply high voltage make corona probe (7) generate cation or bear from
Son, metal cap (9) are located on the outside of corona probe (7), and the DC power supply (12) for floating ground applies high-voltage potential to metal cap (9), make
It obtains metal cap (9) to work in the form of electrostatic lenses, aperture plate (10) made of metal is located above sample stage (15), floats for controlling
The quantity of sample stage (15) corona ion is moved on to, sample (14) is located on specimen holder, and corona ion passes through the master of sample stage (15)
Electrode (17) charges to sample (14), and galvanometer (20) is used to measure the charging current by sample (14), the high voltage and constant current
Source (8) ensure that corona ion current that corona probe (7) is launched be it is constant, without by the potential size on aperture plate (10)
It influences, aperture plate (10) connects voltage source (13), so that the charging current I of sample2It keeps constant.Voltage V on aperture plate (10)g(t)
With the relationship V between sample (14) surface voltage V (t)g(t)=V (t)+Vag, wherein VagFor sample (14) surface and aperture plate (10)
Between potential difference, when sample (14) charging process starts, Vg(t) sport Δ Vgi=Vag(I2)-Vag0(I2), wherein I2
To preset sample (14) charging current, V in computer (19)ag(I2) it be sample (14) charging current is I2When corresponding sample
(14) potential difference between surface and aperture plate (10), Vag0(I2) it is sample (14) charging current I2Corresponding sample (14) when=0
Potential difference between surface and aperture plate (10)；When sample (14) charging process stops, Vg(t) sport Δ Vgf=-Δ Vgi,
Due to sample (14) carry out constant-current charge when, Δ Vag=0, therefore, Δ V (t)=Δ Vg(t), i.e. V (t) can pass through Vg
(t) it changes with time to obtain.
Mechanical meaurement principle:
The mechanical characteristic such as rigidity and coefficient of elasticity of cantilever (5-2) are it is known that lens probe (6) and sample (14) surface
Interaction force makes cantilever (5-2) that small deviation occurs, and also occurs so as to cause reflecting mirror I (2) and reflecting mirror II (4)
It is biased to, fibre optical sensor I (1) and fibre optical sensor II (3) can separately detect the inclined of reflecting mirror I (2) and reflecting mirror II (4)
To, and the data of acquisition are inputted into computer (19), to obtain the deviation information of cantilever (5-2), further analysis can be obtained
Lens probe (6) and sample (14) surface are respectively in normal direction and tangential interaction force.Meanwhile passing through micro objective (18)
Record the image of the sample (14) when the interaction of lens probe (6) and sample (14) surface, and the deviation with cantilever (5-2)
Information combines, and can obtain the mechanical information in sample (14) deformation and relaxation process.Sample (14) deformation, sample (14) with
The relationship between power, sample (14) mechanical characteristic between lens probe (6) is as followsWherein a is the radius of the contact area of sample (14) and lens probe (6),
R is the radius of the glass lens on lens probe (6) top, and k is the bulk modulus of sample (14), E*For effective modulus, W is
Adhesion work, power of the p between sample (14) and lens probe (6).
A kind of films test device mainly includes fibre optical sensor I (1), reflecting mirror I (2), fibre optical sensor II
(3), reflecting mirror II (4), probe (5), lens probe (6), corona probe (7), high-voltage constant current source (8), metal cap (9), aperture plate
(10), displacement platform (11), DC power supply (12), voltage source (13), sample (14), sample stage (15), ground connection ring electrode (16), master
Electrode (17), micro objective (18), computer (19), galvanometer (20) and current controller (21), xyz are three-dimensional space seat
Mark system, the probe (5) have front end and end, and the probe (5) is from front end to end by probe disk (5-1), cantilever (5-2)
It is formed by connecting with microdrive (5-3), microdrive (5-3) can be mobile in the direction y, and minimum movement stepping is 60 nanometers, most
Big moving range is 30 millimeters, maximum rate travel is 2 mm/seconds, and the probe disk (5-1) is discoid, probe disk (5-1)
Lower surface has probe position I (5-1-1), probe position II (5-1-2) and probe position III (5-1-3), the probe position I (5-1-1)
Positioned at probe (5) front end, probe position I (5-1-1) can mounted lens probe (6), corona probe (7), probe can be also installed
Position II (5-1-2) can mounted lens probe (6), probe position III (5-1-3) can install corona probe (7), can be by lens
Probe (6) switches to probe position I (5-1-1) from probe position II (5-1-2) to carry out experiment of machanics, can be by corona probe (7)
Probe position I (5-1-1) is switched to from probe position II (5-1-2) to carry out Experiments of Electricity, and the upper surface probe disk (5-1) is equipped with instead
It penetrates mirror II (4), reflecting mirror II (4) is parallel with xz plane, and the side probe disk (5-1) is equipped with reflecting mirror I (2), reflecting mirror I (2)
It is parallel with x/y plane；Fibre optical sensor I (1) and fibre optical sensor II (3) difference cable connection computer (19), fibre optical sensor
The position of I (1) is fixed and is faced reflecting mirror I (2), and the position of fibre optical sensor II (3) is fixed and faces reflecting mirror II
(4), lens probe (6) top is the hemispheric glass lens that a diameter range is 1.5 millimeters to 4 millimeters, corona probe
(7) cable connection high-voltage constant current source (8), corona probe (7) is 20 millimeters a length of, diameter is 0.3 millimeter；The lens of probe (5) are visited
Metal cap (9) and aperture plate (10), the metal cap (9) and aperture plate (10) are sequentially installed with below needle (6) and corona probe (7)
It is all connected to displacement platform (11), displacement platform (11) can control metal cap (9) respectively and aperture plate (10) is mobile, and metal cap (9) is logical
Displacement platform (11) cable connection DC power supply (12) is crossed, metal cap (9) is the circle that length is 24 millimeters, basal diameter is 18 millimeters
Cylinder, in the y-direction, aperture plate (10) is 2 millimeters by the side length that the metal wire that diameter is 0.2 millimeter forms to the axis on cylindrical surface
Square net, aperture plate (10) pass through displacement platform (11) cable connection voltage source (13), voltage source (13) cable connection electric current control
Device (21) processed；Sample stage (15) is located at below aperture plate (10), and sample stage (15) can move in xz plane, minimum movement stepping
For 60 nanometers, maximum moving range be 30 millimeters, maximum rate travel is 2 mm/seconds, and sample stage (15) bottom has ground loop
Electrode (16) and main electrode (17), ground connection ring electrode (16) outer diameter is 20 millimeters, internal diameter is 18 millimeters, the main electrode
(17) for 14 millimeters of diameter disk and can light transmission, it is interior that sample (14) is located at sample stage (15), sample (14) respectively with ground connection
Ring electrode (16) and main electrode (17) contact, main electrode (17) successively cable connection galvanometer (20), current controller (21) and
Computer (19), micro objective (18) are located at below sample stage (15)；Sample (14) charging current that galvanometer (20) measures
I1It is input to current controller (21), preset sample (14) charging current I in computer (19)2It is input to current controller
(21), current controller (21) compares I1And I2Output feedback signal is applied to aperture plate to voltage source (13) can control afterwards
(10) voltage on.
The present invention using cantilever be biased to method and combine hemispherical lens probe, can to sample surfaces carry out tangentially and
The mechanical meaurement of normal direction, and real-time in situ imaging can be carried out to sample using the method that microscope is observed from below, in addition,
By switching corona probe associated electrical measurement can be carried out to film.
Claims (1)
1. a kind of films test device mainly includes fibre optical sensor I (1), reflecting mirror I (2), fibre optical sensor II (3), reflection
Mirror II (4), probe (5), lens probe (6), corona probe (7), high-voltage constant current source (8), metal cap (9), aperture plate (10), displacement
Platform (11), DC power supply (12), voltage source (13), sample (14), sample stage (15), ground connection ring electrode (16), main electrode (17),
Micro objective (18), computer (19), galvanometer (20) and current controller (21), xyz are three-dimensional coordinate system,
It is characterized in that: the probe (5) have front end and end, the probe (5) from front end to end by probe disk (5-1),
Cantilever (5-2) and microdrive (5-3) are formed by connecting, and microdrive (5-3) can be mobile in the direction y, and minimum movement stepping is
60 nanometers, maximum moving range be 30 millimeters, maximum rate travel is 2 mm/seconds, the probe disk (5-1) be it is discoid, visit
The dials lower surface (5-1) has probe position I (5-1-1), probe position II (5-1-2) and probe position III (5-1-3), the probe
Position I (5-1-1) be located at probe (5) front end, probe position I (5-1-1) can mounted lens probe (6), can also install corona spy
Needle (7), probe position II (5-1-2) can mounted lens probe (6), probe position III (5-1-3) can install corona probe (7),
Lens probe (6) can be switched to probe position I (5-1-1) from probe position II (5-1-2) to carry out experiment of machanics, it can will be electric
Dizzy probe (7) switch to probe position I (5-1-1) from probe position II (5-1-2) to carry out Experiments of Electricity, table on probe disk (5-1)
Face is equipped with reflecting mirror II (4), and reflecting mirror II (4) is parallel with xz plane, and the side probe disk (5-1) is equipped with reflecting mirror I (2),
Reflecting mirror I (2) is parallel with x/y plane；
Fibre optical sensor I (1) and fibre optical sensor II (3) difference cable connection computer (19), the position of fibre optical sensor I (1)
It sets fixed and faces reflecting mirror I (2), the position of fibre optical sensor II (3) is fixed and faced reflecting mirror II (4), and lens are visited
Needle (6) top is the hemispheric glass lens that a diameter range is 1.5 millimeters to 4 millimeters, corona probe (7) cable connection
High-voltage constant current source (8), corona probe (7) is 20 millimeters a length of, diameter is 0.3 millimeter；The lens probe (6) and corona of probe (5)
Metal cap (9) and aperture plate (10) are sequentially installed with below probe (7), the metal cap (9) and aperture plate (10) are all connected to position
Moving stage (11), displacement platform (11) can control metal cap (9) respectively and aperture plate (10) is mobile, and metal cap (9) passes through displacement platform
(11) cable connection DC power supply (12), metal cap (9) are the cylindrical surfaces that length is 24 millimeters, basal diameter is 18 millimeters, circle
The axis of cylinder in the y-direction, the square that aperture plate (10) is 2 millimeters by the side length that the metal wire that diameter is 0.2 millimeter forms
Grid, aperture plate (10) pass through displacement platform (11) cable connection voltage source (13), voltage source (13) cable connection current controller
(21)；
Sample stage (15) is located at below aperture plate (10), and sample stage (15) can move in xz plane, and minimum movement stepping is 60
Nanometer, maximum moving range are 30 millimeters, maximum rate travel is 2 mm/seconds, and sample stage (15) bottom has ground connection ring electrode
(16) and main electrode (17), ground connection ring electrode (16) outer diameter is 20 millimeters, internal diameter is 18 millimeters, and the main electrode (17) is
The disk that 14 millimeter of diameter and can light transmission, sample (14) is located in sample stage (15), sample (14) respectively with ground connection ring electrode
(16) it is contacted with main electrode (17), main electrode (17) successively cable connection galvanometer (20), current controller (21) and computer
(19), micro objective (18) is located at below sample stage (15)；Sample (14) charging current I that galvanometer (20) measures1Input
To current controller (21), preset sample (14) charging current I in computer (19)2It is input to current controller (21), electricity
Stream controller (21) compares I1And I2Output feedback signal is applied on aperture plate (10) to voltage source (13) with that can control afterwards
Voltage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811083994.2A CN109115606B (en) | 2018-09-06 | 2018-09-06 | Film testing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811083994.2A CN109115606B (en) | 2018-09-06 | 2018-09-06 | Film testing device |
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| CN109115606A true CN109115606A (en) | 2019-01-01 |
| CN109115606B CN109115606B (en) | 2024-02-02 |
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|---|---|---|---|
| CN201811083994.2A Active CN109115606B (en) | 2018-09-06 | 2018-09-06 | Film testing device |
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| CN112763359A (en) * | 2020-12-30 | 2021-05-07 | 松山湖材料实验室 | Nano-film electrostatic fatigue testing method |
| CN114002483A (en) * | 2022-01-04 | 2022-02-01 | 苏州大学 | Transient photovoltage measuring system in liquid in-situ reaction |
| CN114778698A (en) * | 2022-06-17 | 2022-07-22 | 电子科技大学 | Material elastic modulus measuring method based on composite piezoelectric film bulk acoustic resonance |
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