CN202159660U - Patch type SOD diode - Google Patents

Patch type SOD diode Download PDF

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Publication number
CN202159660U
CN202159660U CN2011202211066U CN201120221106U CN202159660U CN 202159660 U CN202159660 U CN 202159660U CN 2011202211066 U CN2011202211066 U CN 2011202211066U CN 201120221106 U CN201120221106 U CN 201120221106U CN 202159660 U CN202159660 U CN 202159660U
Authority
CN
China
Prior art keywords
crystal grain
welding
lead wire
diode
tail ends
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2011202211066U
Other languages
Chinese (zh)
Inventor
林茂昌
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shanghai Jinke Semiconductor & Equipment Co ltd
Original Assignee
Shanghai Jinke Semiconductor & Equipment Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shanghai Jinke Semiconductor & Equipment Co ltd filed Critical Shanghai Jinke Semiconductor & Equipment Co ltd
Priority to CN2011202211066U priority Critical patent/CN202159660U/en
Application granted granted Critical
Publication of CN202159660U publication Critical patent/CN202159660U/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/35Mechanical effects
    • H01L2924/351Thermal stress

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

The utility model discloses a patch type SOD diode which comprises a casing made of packaging material, and a crystal grain and two lead wires which are positioned in the casing. The two lead wires are a left lead wire and a right lead wire, one end of the left lead wire and the right lead wire extends into the casing, the other ends of the left lead wire and the right lead wire are positioned outside the casing to form bent parts; the axial line of the crystal grain is vertical to the axial line of the patch type SOD diode, the sections of the left lead wire and the right lead wire extending into the casing are welding tail ends, the two welding tail ends are positioned outside the welding surfaces at the two sides of the crystal grain, and the axial lines of the two welding tail ends coincide with the axial line of the crystal grain, and convex welding parts welded with the welding surfaces at the two sides of the crystal grain are arranged at the ends of the welding tail ends of the left lead wire and the right lead wire. The axial lines of the welding tail ends of the lead wires coincide with the axial line of the crystal grain, and the crystal grain is positioned through the convex welding parts at the two welding tail ends, thereby solving the technical problems in the prior art that the position of the crystal grain is inaccurate so as to result into the discarding of products, the low efficiency of crystal grain positioning and the failure to realize large-scale production.

Description

A kind of SMD SOD diode
Technical field
The utility model relates to the semiconductor device packaging technique field, particularly a kind of SMD SOD diode.
Background technology
Whole world electronic product such as phone, television set, facsimile machine, computer peripheral product are all suitable compact for the research and development target, so require the volume of chip diode as best one can little.
But present SMD SOD diode production enterprise finds all the time; Under crystal grain and lead-in wire and all qualified situation of encapsulating material; Quality qualification rate after the encapsulation is not very high, has only about 90%, in order to filter out qualified SMD SOD diode; Need to drop into a large amount of checkout equipment and personnel, production efficiency is low.Through analyzing reason, the quality qualification rate after finding to encapsulate is very not high to be because the crystal grain location is forbidden to cause.
The utility model content
The utility model technical problem to be solved is to provide a kind of SMD SOD diode pipe of brand new, fundamentally to solve the existing insurmountable problem of SMD SOD diode.
The utility model technical problem to be solved can realize through following technical scheme:
A kind of SMD SOD diode comprises it is characterized in that the housing that is made up of encapsulating material and the crystal grain and two lead-in wires that are positioned at housing; Said two lead-in wires are divided into left and right lead-in wire; One end of left and right lead-in wire stretches in the housing, and the other end of left and right lead-in wire is positioned at outside the housing, becomes a kink; The axis normal of the axis of described crystal grain and SMD SOD diode; One section of stretching in the housing of left and right lead-in wire is terminal for welding; Two welding are terminal to be positioned at outside the solder side of crystal grain both sides; And the dead in line of two welding ends is provided with the welding protuberance that welds with crystal grain both sides solder side in the axis of said crystal grain in the terminal termination of the welding of left and right lead-in wire.
Said two lead-in wires of the utility model are identical structure.
Owing to adopted technique scheme; The dead in line of two wire bonds end is in the axis of said crystal grain; Welding protuberance on the two welding ends is implemented the location to crystal grain; It is inaccurate to have solved the crystal grain position placement that exists in the prior art, and product rejection that is caused and crystal grain are placed inefficiency, the technical problem that can't accomplish scale production.Because the structure of two lead-in wires is identical, it constitutes symmetrical structure in the crystal grain both sides, make the suffered thermal stress in crystal grain both sides successively decrease each other; The suffered stress of crystal grain is zero; Improved useful life of weld between crystal grain and the lead-in wire, made the electrical current of SMD SOD diode of the utility model be higher than 5% of existing SMD SOD diode, lead-in wire adopts unique manufacturing process; Saved the waste of material, the waste rate that makes copper material drops to 5% by original 25%.Quality qualification rate >=99.9% after the product encapsulation.
Description of drawings
Fig. 1 is the internal structure sketch map of the SMD SOD diode of the utility model.
Embodiment
For technological means, creation characteristic that the utility model is realized, reach purpose and be easy to understand with effect and understand, below in conjunction with concrete diagram, nearly step elaboration the utility model.
Referring to Fig. 1; As can be seen from the figure, this SMD SOD diode comprises the housing 300 that is made up of encapsulating material and the crystal grain 400 and two lead-in wires that are positioned at housing 300; Wherein lead-in wire is divided into structure and the identical left and right lead-in wire 100,200 of shape in twos; End at left and right lead-in wire 100,200 stretches in the housing 300, constitutes welding end 110,210, the dead in line of terminal 110, the 210 coaxial settings of welding and its common axis and crystal grain 400.Crystal grain 400 is vertical with the axis 500 of SMD SOD diode; Terminal 110,210 symmetries of welding are positioned at outside the solder side 410,420 of crystal grain 400 both sides, are provided with the welding protuberance 120,220 with 410,420 welding of crystal grain 400 both sides solders side in the termination of the welding terminal 110,210 of left and right lead-in wire 100,200.
More than show and described basic principle of the utility model and the advantage of principal character and the utility model.The technical staff of the industry should understand; The utility model is not restricted to the described embodiments; The principle of describing in the foregoing description and the specification that the utility model just is described; Under the prerequisite that does not break away from the utility model spirit and scope, the utility model also has various changes and modifications, and these variations and improvement all fall in the utility model scope that requires protection.The utility model requires protection range to be defined by appending claims and equivalent thereof.

Claims (2)

1. SMD SOD diode; Comprise the housing that constitutes by encapsulating material and the crystal grain and two lead-in wires that are positioned at housing; It is characterized in that said two lead-in wires are divided into left and right lead-in wire, an end of left and right lead-in wire stretches in the housing; The other end of left and right lead-in wire is positioned at outside the housing, becomes a kink; The axis normal of the axis of described crystal grain and SMD SOD diode; One section of stretching in the housing of left and right lead-in wire is terminal for welding; Two welding are terminal to be positioned at outside the solder side of crystal grain both sides; And the dead in line of two welding ends is provided with the welding protuberance that welds with crystal grain both sides solder side in the axis of said crystal grain in the terminal termination of the welding of left and right lead-in wire.
2. SMD SOD diode as claimed in claim 1 is characterized in that, said two lead-in wires are identical structure.
CN2011202211066U 2011-06-27 2011-06-27 Patch type SOD diode Expired - Fee Related CN202159660U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2011202211066U CN202159660U (en) 2011-06-27 2011-06-27 Patch type SOD diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2011202211066U CN202159660U (en) 2011-06-27 2011-06-27 Patch type SOD diode

Publications (1)

Publication Number Publication Date
CN202159660U true CN202159660U (en) 2012-03-07

Family

ID=45767286

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2011202211066U Expired - Fee Related CN202159660U (en) 2011-06-27 2011-06-27 Patch type SOD diode

Country Status (1)

Country Link
CN (1) CN202159660U (en)

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Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20120307

Termination date: 20170627