CN202081191U - Sapphire growth furnace - Google Patents
Sapphire growth furnace Download PDFInfo
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- CN202081191U CN202081191U CN2011201703059U CN201120170305U CN202081191U CN 202081191 U CN202081191 U CN 202081191U CN 2011201703059 U CN2011201703059 U CN 2011201703059U CN 201120170305 U CN201120170305 U CN 201120170305U CN 202081191 U CN202081191 U CN 202081191U
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- seed crystal
- heating unit
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Abstract
The utility model discloses a sapphire growth furnace. The sapphire growth furnace comprises a vacuum furnace shell, a crucible, heating devices, a seed crystal fixing device, an inert gas circulation system and a vacuum device, wherein the heating devices are located at the bottom of the vacuum furnace shell; the crucible is placed in a space enclosed by the heating devices; the seed crystal fixing device is located right above the crucible and used for fixing a seed crystal; the inert gas circulation system is an independent gas circulation system, and the bottom of the inert gas circulation system is connected with the top of the seed crystal; and the vacuum device is hermetically connected with the vacuum furnace shell. The sapphire growth furnace solves such defects of the Kyropoulos method as difficulties in seeding and the control of crystal direction and crystal growth rate during crystal growth, and overcomes the shortcomings of the heat exchange method that crystal growth cannot be observed and energy consumption is relatively high.
Description
Technical field
The utility model relates to a kind of sapphire growth stove, belongs to crystallization processes and learns the field.
Background technology
At present, sapphire crystal growth technology adopts kyropoulos, heat-exchanging method, crystal pulling method and guided mode method etc. more, wherein, kyropoulos technology is the most ripe, occupy the market share more than 70%, heat-exchanging method occupies a part of market share, and crystal pulling method and guided mode method technology are difficult to satisfy the actual demand that industrialization is produced.
But, kyropoulos directly from top to bottom grow A to sapphire crystal, and as the substrate that is used for LED mostly be C to, thereby the crystal of all kyropoulos growth all will laterally draw rod, then with the crystal bar polishing of drawing out, polishing etc., cut into wafer at last, the utilization ratio of crystal bar is lower; Heat-exchanging method is that C is laid on crucible bottom in advance to seed crystal, and in the process of raw material fusing, constantly ventilate with the cooling seed crystal, guaranteeing that raw materialization reduces the growth of power realization based on seed crystal in the back to the greatest extent, because seed crystal is in crucible inside, therefore, in order to keep seed crystal not to be melted, need a large amount of rare gas element circulations to carry out heat exchange, strengthened the energy consumption in producing, and, in actual production process, the situation of bottom seed crystal is difficult to know, in process of growth subsequently, owing to can not control the growth velocity ratio of the portraitlandscape of seed crystal fully, so may cause crystal to contact too early, cause crystal cleavage with the crucible inwall.
The utility model content
The purpose of this utility model is to provide a kind of novel sapphire growth stove, adopt gas-cooled method control seed crystal not to be melted, growing crystal from top to bottom, power of flow, temperature and heating unit by controlled chilling gas etc., regulate the crystalline growth velocity, solve kyropoulos and be difficult for crystallographic direction and the uppity defective of long brilliant speed in seeding and the crystal growing process.
The utility model provides a kind of sapphire growth stove, and it comprises vacuum furnace shell, crucible, heating unit, seed crystal stationary installation, the rare gas element recycle system, vacuum unit; Wherein, heating unit is positioned at the bottom of vacuum furnace shell, and crucible places in the space of heating unit encirclement; The seed crystal stationary installation is positioned at the top of crucible, is used for fixing seed crystal; The rare gas element recycle system is an independently gas-circulating system, is positioned at the top of seed crystal stationary installation, and its bottom can join with the top of seed crystal, and its contact area is slightly less than the top-surface area of seed crystal; Vacuum unit is connected with the vacuum furnace shell is airtight, this vacuum unit can be positioned at the vacuum furnace shell around, as top, side or the bottom of furnace shell.
Wherein, the rare gas element recycle system is contained in the inside or the outside of vacuum furnace shell.
Further, the described rare gas element recycle system is made up of extractor fan, controllable type heat exchanger, air-supply arrangement, wherein, the controllable type heat exchanger is connected with air-supply arrangement with extractor fan respectively by pipeline between extractor fan and air-supply arrangement; Wherein, rare gas element adopts helium, nitrogen etc. more.
Further, seed crystal stationary installation, the rare gas element recycle system can oscilaltions, during operation, the seed crystal stationary installation is loaded seed crystal and is descended, make the melt liquid level in the seed crystal contact crucible, simultaneously, the rare gas element recycle system also descends thereupon, keeping its bottom to link to each other with the top of seed crystal all the time, thereby reach the purpose of heat exchange.
Further, it also comprises infrared thermometer, and this temperature measurer passes the vacuum furnace shell, and is in same level height with seed crystal.
Further, it also comprises spy hole, this spy hole is positioned on the vacuum furnace shell of oblique upper of seed crystal, its longitudinal growth speed and transverse growth speed when being used to observe crystal growth, thus crystal growth rate regulated by the rare gas element recycle system at side, bottom heating unit and seed crystal top.
Further, described heating unit comprises sidepiece heating unit and bottom heating unit, can independently control, to guarantee that crystal laterally and the controllability of longitudinal growth.
Further, the height of sidepiece heating unit can guarantee whole crystalline temperature unanimity a little more than the height of seed crystal, realizes in-situ annealing and cooling.
The utility model adopts gas-cooled method to control seed crystal and is not melted, again growing crystal from top to bottom; Separately controlling sidepiece and bottom heating unit, to realize that crystalline vertically reaches transverse growth controlled; Pass through the flow of controlled chilling gas in addition, temperature and sidepiece, the power ratios of bottom heater etc. are regulated the crystalline growth velocity.Both solve kyropoulos and be difficult for crystallographic direction and the uppity defective of long brilliant speed in seeding and the crystal growing process, overcome the shortcoming that the crystal growth situation can't be observed and energy consumption is higher relatively in the heat-exchanging method again.
Description of drawings
Fig. 1 structural representation of the present utility model;
Fig. 2 structural representation of the present utility model;
Fig. 3 structural representation of the present utility model;
The structural representation of Fig. 4 rare gas element recycle system;
Wherein, 1-vacuum furnace shell, 2-crucible, 3-heating unit, 5-melt, 6-seed crystal stationary installation, 7-seed crystal, 8-infrared thermometer, 9-spy hole, the 10-rare gas element recycle system, 11-vacuum unit, 12-extractor fan, 13-controllable type heat exchanger, 14-air-supply arrangement, 15-sidepiece heating unit, 16-bottom heating unit.
Embodiment
Shown in Fig. 1,2,3,4, the utility model is a kind of sapphire growth stove, and it comprises vacuum furnace shell 1, crucible 2, heating unit 3, seed crystal stationary installation 6, the rare gas element recycle system 10, vacuum unit 11; Wherein, heating unit 3 is positioned at the bottom of vacuum furnace shell 1, and crucible 2 places in the space of heating unit 3 encirclements; Seed crystal stationary installation 6 be positioned at crucible 2 directly over, be used for fixing seed crystal 7; The rare gas element recycle system 10 is an independently gas-circulating system, is positioned at the top of seed crystal stationary installation 6; Vacuum unit 11 and 1 airtight connection of vacuum furnace shell; Wherein, the rare gas element recycle system 10 can be installed in the inside or the outside of vacuum furnace shell 1; The rare gas element recycle system 10 is made up of extractor fan 12, controllable type heat exchanger 13, air-supply arrangement 14, and controllable type heat exchanger 13 is connected with air-supply arrangement 14 with extractor fan 12 respectively by pipeline between extractor fan 12 and air-supply arrangement 14; But seed crystal stationary installation 6,10 oscilaltions of the rare gas element recycle system; This utility model also comprises infrared thermometer 8, and this temperature measurer passes vacuum furnace shell 1, and is in same level height with seed crystal 7; This utility model also comprises spy hole 9, and this spy hole is positioned on the vacuum furnace shell 1 of oblique upper of seed crystal 7; In this utility model, heating unit 3 comprises sidepiece heating unit 15 and bottom heating unit 16, and the height of sidepiece heating unit 15 is a little more than the height of seed crystal 7.
When actually operating, earlier with purified α-Al
2O
3Pack in the crucible 2, sapphire seed crystal 7 is fixed in crucible 2 tops by seed crystal stationary installation 6; Crucible 2 is heated to more than the fusing point of aluminum oxide by heating unit, make aluminum oxide form melt 5, the temperature of control melt, make temperature a little more than fusing point, but by oscilaltion seed crystal stationary installation 6, the height of seed crystal 7 is reduced, part seed crystal 7 is contacted with melt 5, realize the fully sticking profit of seed crystal 7 and melt 5; But the rare gas element circulation device 10 with oscilaltion moves down again, its bottom is contacted with the top of seed crystal 7, form the heat exchange contact face, again by the low temperature nitrogen in the rare gas element circulation device 10, make the head temperature of seed crystal 7 be lower than fusing point, make seed crystal 7 not melt, and, round-robin nitrogen, constantly take away heat from contact surface, crystallization makes seed crystal 7 grow up gradually on seed crystal 7 with regard to making melt 5 tops be in supercooled state for this, and carefully regulate the power of heating unit 3, make that finally the melt in the whole crucible all solidifies.In the process of crystal growth, its longitudinal growth speed and transverse growth speed in the time of can observing crystal growth by spy hole 9, adopt infrared thermometer to measure seed crystal temperature on every side simultaneously, thereby regulate crystal growth rate by the rare gas element circulation device 10 at sidepiece heating unit 15, bottom heating unit 16 and seed crystal top.And in the whole crystal growing process, can vacuumize by vacuum unit 11, also can after vacuumizing, in the vacuum furnace shell, feed rare gas element as required, keep the gas and the pressure that need in the growing environment.When adopting the utility model growing sapphire crystal, seed crystal is placed on the melt, its surrounding temperature is lower than the aluminum oxide fusing point, needing in the heat-exchanging method to have avoided a large amount of rare gas element cycling hot to exchange the shortcoming that keeps seed crystal not to be melted; Different with kyropoulos, the heat of the seed crystal in this utility model is by gaseous species, flow, and air pressure, a plurality of factors such as temperature are regulated, and the heat that produces in the crystallisation process can accurately be derived, and long brilliant speed is control easily also; The height of sidepiece heating unit is higher than the height of sapphire crystal in the utility model in addition, after crystal growth finishes, by controlled chilling airshed and sidepiece heating unit, can realize that each section of crystal temperature is even, realizes in-situ annealing.
Claims (8)
1. sapphire growth stove, it is characterized in that: it comprises vacuum furnace shell (1), crucible (2), heating unit (3), seed crystal stationary installation (6), the rare gas element recycle system (10), vacuum unit (11); Wherein, heating unit (3) is positioned at the bottom of vacuum furnace shell (1), and crucible (2) places in the space of heating unit (3) encirclement; Seed crystal stationary installation (6) is positioned at the top of crucible (2), is used for fixing seed crystal (7); The rare gas element recycle system (10) is an independently gas-circulating system, is positioned at the top of seed crystal stationary installation (6); Vacuum unit (11) and airtight connection of vacuum furnace shell (1).
2. growth furnace according to claim 1 is characterized in that: the described rare gas element recycle system (10) is installed in the inside or the outside of vacuum furnace shell (1).
3. growth furnace according to claim 1 and 2, it is characterized in that: the described rare gas element recycle system (10) is made up of extractor fan (12), controllable type heat exchanger (13), air-supply arrangement (14), wherein, controllable type heat exchanger (13) is positioned between extractor fan (12) and the air-supply arrangement (14), is connected with air-supply arrangement (14) with extractor fan (12) respectively by pipeline.
4. growth furnace according to claim 1 is characterized in that: described seed crystal stationary installation (6), the rare gas element recycle system (10) but oscilaltion.
5. growth furnace according to claim 1 is characterized in that: it also comprises infrared thermometer (8), and this temperature measurer passes vacuum furnace shell (1), and is in sustained height with seed crystal (7).
6. growth furnace according to claim 1 is characterized in that: it also comprises spy hole (9), and this spy hole is positioned on the vacuum furnace shell (1) of oblique upper of seed crystal (7).
7. growth furnace according to claim 1 is characterized in that: described heating unit (3) comprises sidepiece heating unit (15) and bottom heating unit (16).
8. growth furnace according to claim 7 is characterized in that: the height of sidepiece heating unit (15) is a little more than the height of seed crystal (7).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011201703059U CN202081191U (en) | 2011-05-25 | 2011-05-25 | Sapphire growth furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011201703059U CN202081191U (en) | 2011-05-25 | 2011-05-25 | Sapphire growth furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202081191U true CN202081191U (en) | 2011-12-21 |
Family
ID=45341831
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011201703059U Expired - Lifetime CN202081191U (en) | 2011-05-25 | 2011-05-25 | Sapphire growth furnace |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202081191U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103103604A (en) * | 2013-01-24 | 2013-05-15 | 天通控股股份有限公司 | Manufacturing method of large-size C-oriented sapphire crystals |
| CN104264216A (en) * | 2014-10-12 | 2015-01-07 | 刘瑜 | High-reliability automatic seeding process for sapphire crystal growth through kyropoulos method |
| CN106987903A (en) * | 2017-03-27 | 2017-07-28 | 宁夏佳晶科技有限公司 | A kind of improved large scale synthetic sapphire production technology |
-
2011
- 2011-05-25 CN CN2011201703059U patent/CN202081191U/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103103604A (en) * | 2013-01-24 | 2013-05-15 | 天通控股股份有限公司 | Manufacturing method of large-size C-oriented sapphire crystals |
| CN103103604B (en) * | 2013-01-24 | 2016-04-20 | 天通控股股份有限公司 | Large size C is to sapphire crystal manufacture method |
| CN104264216A (en) * | 2014-10-12 | 2015-01-07 | 刘瑜 | High-reliability automatic seeding process for sapphire crystal growth through kyropoulos method |
| CN106987903A (en) * | 2017-03-27 | 2017-07-28 | 宁夏佳晶科技有限公司 | A kind of improved large scale synthetic sapphire production technology |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: DAI JUN JIECE ENERGY SAVING TECHNOLOGY (SUZHOU) CO Effective date: 20111206 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20111206 Address after: 610213 Sichuan Province, Chengdu Shuangliu Huayang three Binhe Road section of the Fuhe music garden 26-7-1 Co-patentee after: Dai Jun Patentee after: Lv Tiezheng Co-patentee after: Agile energy saving technology (Suzhou) Co., Ltd. Address before: 610213 Sichuan Province, Chengdu Shuangliu Huayang three Binhe Road section of the Fuhe music garden 26-7-1 Patentee before: Lv Tiezheng |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20170707 Address after: 610213 Sichuan Province, Chengdu Shuangliu Huayang three Binhe Road section of the Fuhe music garden 26-7-1 Patentee after: Lv Tiezheng Address before: 610213 Sichuan Province, Chengdu Shuangliu Huayang three Binhe Road section of the Fuhe music garden 26-7-1 Co-patentee before: Dai Jun Patentee before: Lv Tiezheng Co-patentee before: Agile energy saving technology (Suzhou) Co., Ltd. |
|
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20111221 |