CN202042486U - High-temperature resistant high-power thyristor - Google Patents
High-temperature resistant high-power thyristor Download PDFInfo
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- CN202042486U CN202042486U CN201120077992XU CN201120077992U CN202042486U CN 202042486 U CN202042486 U CN 202042486U CN 201120077992X U CN201120077992X U CN 201120077992XU CN 201120077992 U CN201120077992 U CN 201120077992U CN 202042486 U CN202042486 U CN 202042486U
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Abstract
The utility model discloses a high-temperature resistant high-power thyristor, and aims to provide a high-temperature resistant high-power thyristor, which is high in junction temperature and bearing current density. The high-temperature resistant high-power thyristor comprises a shell and a semiconductor chip in a four-layer three-end structure P-N-P-N; the semiconductor chip packaged in the shell comprises an anode molybdenum piece, a high-density area P+, an anode emitting area P1, a long base area N1, a short base area P2 and a cathode emitting area N2; and the length of the long base area N1 is larger than 100um. Compared with an existing thyristor, the high-temperature resistant high-power thyristor has the thicker base areas, thereby weakening an electric field and achieving the purposes of reducing drift current and avoiding mistaken opening of the thyristor caused by increase of anode current. Besides, the high-density area P+ is added to benefit minority carrier injection of the base areas, conductivity modulation effect is enhanced, and pressure drop and power consumption are reduced obviously. Simultaneously, expansion of a spatial electric charge area can be stopped effectively, the problems of pressure drop increase and working voltage reduction are solved, and the junction temperature of the device and the current density of a unit area are increased.
Description
Technical field
The utility model relates to a kind of semiconductor device, especially relates to a kind of high temperature resistant high-power thyristor.
Background technology
Because power electronic technology is that the power application electronic device is realized multiple conversion and the control to electric energy, the power electronic equipment of employing power electronic technology manufacturing has been realized the function with light current control forceful electric power, have energy-conservation, consumption reduction, economize material, improve advantage with electricity quality.Therefore, the basis that power electronic technology is considered to new industry and rebuilds traditional industry also is the new and high technology of a new generation.Power electronic device is power electronic technology basis and crucial, and the generation of each novel electric power electric device has all brought the development of power electronic technology revolution.With abroad comparing, there are very big gap in the kind of China's power electronic device and quality at present, for adapting to the needs of Chinese national economy high speed development, must go into overdrive to support the exploitation and the production of novel electric power electric device, and introduce to the market as early as possible.
Power electronic device is worked under high-power state, producing a large amount of heat in the process raises the temperature of device, need heat abstractor to dispel the heat to keep device operate as normal at a certain temperature, device high-temperature behavior decision device can operate as normal characteristic, describe with this notion of maximum junction temperature in the industry, junction temperature is exactly the maximum temperature that device can operate as normal.The junction temperature of device is high more to guarantee device reliable and stable work under high more temperature more.The junction temperature that improves device is to be realized by the structural design and the process implementing that improve device.
The junction temperature of the standard code high-power thyristor device of China is 125 ℃, and the high temperature test condition of device is carried out under 125 ℃ of conditions.This also is to have taken all factors into consideration material of China and the industry standard that technological level is done out.But along with the development of power electronic technology, 125 ℃ have not been satisfied demand, and device needs better resistance to elevated temperatures.
It is the patent documentation of CN101931001A that State Intellectual Property Office of the People's Republic of China discloses application publication number on December 29th, 2010, and title is a kind of asymmetric high speed thyristor.It comprises shell and is encapsulated in the semiconductor chip of four layer of three end structure of PNPN in this shell; The clean of the P1 anode region of semiconductor chip is 20～70% of cathode terminal P2 district junction depth deeply, is provided with the P+ high concentration region in the P1 anode region.
When thyristor positive and negative interpolar applies enough big forward voltage, the charge carrier in the base drifts about under electric field action, and when drift current reaches certain value, gate pole does not apply the voltage thyristor also can conducting.Equally, when the temperature rising, the part charge carrier in the base obtains energy and arrives conduction band, drift takes place under the positive field effect produce forward current, makes the thyristor conducting, and both of these case is non-normally, should avoid as far as possible.The junction temperature of device is high more, can not mislead in operate as normal under the hot conditions more.The weak point of this scheme is to bear higher temperature and bigger electric current.
Summary of the invention
The utility model mainly is to solve the low technical problem of existing in prior technology junction temperature, the high temperature resistant high-power thyristor that the current density of provide a kind of junction temperature height, bearing is big.
The utility model is mainly solved by following technical proposals at above-mentioned technical problem:. a kind of high temperature resistant high-power thyristor, comprise shell and the semiconductor chip that is encapsulated in four layer of three end structure of PNPN in the shell, semiconductor chip comprises the anode molybdenum sheet of stack successively, P1 anode emitter region, the N1 growing base area, the short base of P2, the N2 cathode emission area, N1 growing base area thickness is greater than 100 μ m, high temperature resistant high-power high thyristor also comprises one deck P+ high concentration region, the P+ high concentration region is between P1 anode emitter region and anode molybdenum sheet, and the anode molybdenum sheet connects P1 anode emitter region by the P+ high concentration region.P2 is short, and the base is a gate pole, and the N2 cathode emission area is a negative electrode.The relative existing product of the utility model has thicker base, promptly strengthens base width, thereby weakens electric field, reaches the minimizing drift current, avoids anode current to increase and causes thyristor to open by mistake logical purpose; But the design of thick base brings two negative effects to need to solve: the one, and the pressure drop of device increases, and power loss increases, and temperature can raise and make its inefficacy; The 2nd, increasing the base certainly will attenuate P1 district, can be unfavorable to raising device operating voltage.And the adding in high concentration P+ district is beneficial to the few son injection in base, has strengthened conductivity modulation effect, obviously reduces pressure drop and power consumption, can effectively stop the expansion of space charge region simultaneously, has solved pressure drop and has increased and reduce by two problems of operating voltage.By the application of above two technical matters aspects, can improve the junction temperature of device by a relatively large margin, improve the maximum operating temperature of device, increase substantially the current density of device unit are simultaneously.
As preferably, P+ high concentration region surface concentration is 2-3 Ω/.
As preferably, P+ high concentration region thickness is 3～8 μ m.Thin P+ high concentration region makes the utility model can utilize existing silicon single crystal manufacturing, reduces cost.
As preferably, P+ high concentration region impurity is boron.Utilize boron as the diffusion impurity technology maturation, utilize existing equipment just can produce.
As preferably, P1 anode emitter region thickness is less than 70 μ m.THICKNESS CONTROL by control P1 anode emitter region the thickness of semiconductor chip.
The substantial effect that the utility model brings is, can improve the working temperature of device, reduces the requirement to radiating condition; Can increase substantially the current density of device unit are, device of the same area can pass through bigger electric current, and it is littler, compacter that the device of certain electric current can be made size.
Description of drawings
Fig. 1 is a kind of semiconductor chip structure schematic diagram of the present utility model;
Among the figure: 1, anode molybdenum sheet, 2, the P+ high concentration region, 3, P1 anode emitter region, 4, the N1 growing base area, 5, the short base of P2,6, the N2 cathode emission area.
Embodiment
Below by embodiment, and in conjunction with the accompanying drawings, the technical solution of the utility model is described in further detail.
Embodiment: a kind of high temperature resistant thyristor of present embodiment, comprise shell and the semiconductor chip that is encapsulated in four layer of three end structure of PNPN in the shell, semiconductor chip structure comprises the short base 5 of anode molybdenum sheet 1, P+ high concentration region 2, P1 anode emitter region 3, N1 growing base area 4, P2, the N2 cathode emission area 6 of stack successively as shown in Figure 1.P2 is short, and base 5 is a gate pole, and N2 cathode emission area 6 is a negative electrode.P+ high concentration region 2 surface concentrations are 2-3 Ω/, and thickness is 3～8 μ m, and impurity is boron.N1 growing base area 4 thickness are 120～140 μ m, and P1 anode emitter region 3 thickness are 60～70 μ m.The base design of broad can weaken electric field, reduces drift current, and it is logical to avoid the anode current increase to cause thyristor to open by mistake, and P+ high concentration region 2 is beneficial to few sub injection the in base simultaneously, has strengthened conductivity modulation effect, has reduced pressure drop and power consumption.The junction temperature of present embodiment is 175 degrees centigrade, and far above 125 degrees centigrade junction temperature of existing device, square resistance is 2-3 Ω/, and on-state voltage drop is less than 1.2V, is lower than 1.8～2.22V of existing device.
Specific embodiment described herein only is that the utility model spirit is illustrated.The utility model person of ordinary skill in the field can make various modifications or replenishes or adopt similar mode to substitute described specific embodiment, but can't depart from spirit of the present utility model or surmount the defined scope of appended claims.
Although this paper has used terms such as anode emitter region, impurity morely, do not get rid of the possibility of using other term.Using these terms only is in order to describe and explain essence of the present utility model more easily; They are construed to any additional restriction all is contrary with the utility model spirit.
Claims (6)
1. high temperature resistant high-power thyristor, comprise shell and the semiconductor chip that is encapsulated in four layer of three end structure of PNPN in the shell, described semiconductor chip comprises the anode molybdenum sheet of stack successively, P1 anode emitter region, the N1 growing base area, the short base of P2, the N2 cathode emission area, it is characterized in that, described N1 growing base area thickness is greater than 100 μ m, described high temperature resistant high-power thyristor also comprises one deck P+ high concentration region, described P+ high concentration region is between described P1 anode emitter region and described anode molybdenum sheet, and described anode molybdenum sheet connects described P1 anode emitter region by described P+ high concentration region.
2. high temperature resistant high-power thyristor according to claim 1 is characterized in that, described P+ high concentration region surface concentration is 2-3 Ω/.
3. high temperature resistant high-power thyristor according to claim 1 and 2 is characterized in that, described P+ high concentration region thickness is 3～8 μ m.
4. high temperature resistant high-power thyristor according to claim 1 and 2 is characterized in that, described P+ high concentration region impurity is boron.
5. high temperature resistant high-power thyristor according to claim 3 is characterized in that, described P+ high concentration region impurity is boron.
6. high temperature resistant high-power thyristor according to claim 1 is characterized in that, described P1 anode emitter region thickness is less than 70 μ m.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201120077992XU CN202042486U (en) | 2011-03-23 | 2011-03-23 | High-temperature resistant high-power thyristor |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201120077992XU CN202042486U (en) | 2011-03-23 | 2011-03-23 | High-temperature resistant high-power thyristor |
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| CN202042486U true CN202042486U (en) | 2011-11-16 |
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| CN201120077992XU Expired - Fee Related CN202042486U (en) | 2011-03-23 | 2011-03-23 | High-temperature resistant high-power thyristor |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102184951A (en) * | 2011-03-23 | 2011-09-14 | 浙江正邦电力电子有限公司 | High-temperature-resistance high-power thyristor |
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2011
- 2011-03-23 CN CN201120077992XU patent/CN202042486U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102184951A (en) * | 2011-03-23 | 2011-09-14 | 浙江正邦电力电子有限公司 | High-temperature-resistance high-power thyristor |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20111116 Termination date: 20140323 |