CN201904361U - Solar battery capable of converting infrared light into visible light - Google Patents
Solar battery capable of converting infrared light into visible light Download PDFInfo
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- CN201904361U CN201904361U CN2010206294364U CN201020629436U CN201904361U CN 201904361 U CN201904361 U CN 201904361U CN 2010206294364 U CN2010206294364 U CN 2010206294364U CN 201020629436 U CN201020629436 U CN 201020629436U CN 201904361 U CN201904361 U CN 201904361U
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- infrared light
- solar cell
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- semiconductor layer
- visible light
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
Abstract
The utility model relates to a solar battery capable of converting infrared light into visible light, which comprises a transparent substrate, a first electrode, a second electrode, a P-shaped semiconductor layer, an infrared light converting layer, an n-shaped semiconductor layer and a noncrystalline silicon intrinsic layer. The first electrode is disposed on the transparent substrate, the second electrode is disposed between the first electrode and the transparent substrate, the P-shaped semiconductor layer is disposed between the first electrode and the second electrode, the infrared light converting layer is disposed between the P-shaped semiconductor layer and the second electrode and used for converting the infrared light into the visible light, the n-shaped semiconductor layer is disposed between the P-shaped semiconductor layer and the first electrode, and the noncrystalline silicon intrinsic layer is disposed between the P-shaped semiconductor layer and the n-shaped semiconductor layer. The solar battery is capable of improving photoelectric conversion efficiency.
Description
Technical field
The utility model relates to a kind of solar cell, particularly relates to a kind of solar cell that infrared light is converted to visible light.
Background technology
Solar energy is a kind of clean pollution-free and inexhaustible energy, when solution pollution that present fossil energy faced and problem of shortage, is the focus that attracts most attention always.Because solar cell can be an electric energy with solar energy converting directly, therefore become present considerable research topic.
Silica-based solar cell is the common a kind of solar cell of industry.The principle of silica-based solar cell is that the p N-type semiconductor N is engaged with the n N-type semiconductor N, connects face to form p-n.When solar irradiation was mapped to the semiconductor with this p-n junction structure, the energy that photon provided can come out the electron excitation in the semiconductor and to produce electronics-electric hole right.Electronics and electric hole all can be subjected to the influence of built in potential, make the direction of the past electric field in electric hole move, and electronics then moves toward opposite direction.If this solar cell and load (load) are coupled together with lead, then can form a loop (loop), and can make electric current flow through load, this is the principle of solar cell power generation.
Along with environmental consciousness comes back, the notion of carbon reduction is paid attention to by everybody gradually, and the development and utilization of the renewable energy resources becomes the emphasis that development is actively dropped in countries in the world.At present, the key issue of solar cell is the lifting of its photoelectric conversion efficiency, and the photoelectric conversion efficiency that can promote solar cell promptly means the lifting of product competitiveness.
Summary of the invention
The purpose of this utility model is, provides a kind of infrared light is converted to the solar cell of visible light, makes it can be by the visible light that solar cell utilized, to improve photoelectric conversion efficiency with being converted to by the infrared light that solar cell utilized.
To achieve these goals, a kind of infrared light is converted to the solar cell of visible light according to what the utility model proposes, it comprises transparency carrier, first electrode, second electrode, p type semiconductor layer, infrared light conversion layer (infrared light conversion layer), n type semiconductor layer and amorphous silicon intrinsic layer (intrinsic layer); First electrode is disposed on the transparency carrier; Second electrode is disposed between first electrode and the transparency carrier; The p type semiconductor layer is disposed between first electrode and second electrode; The infrared light conversion layer is disposed between the p type semiconductor layer and second electrode, in order to infrared light is converted to visible light; The n type semiconductor layer is disposed between the p type semiconductor layer and first electrode; Amorphous silicon intrinsic layer is disposed between p type semiconductor layer and the n type semiconductor layer.
The utility model also can be applied to the following technical measures to achieve further.
Aforesaid infrared light is converted to the solar cell of visible light, the material of wherein said infrared light conversion layer for example is rare earth (rare earth) element.
Aforesaid infrared light is converted to the solar cell of visible light, wherein said rare earth element for example is lanthanum (La) series elements.
Aforesaid infrared light is converted to the solar cell of visible light, wherein said visible light for example is green glow or bluish-green mixed light.
Aforesaid infrared light is converted to the solar cell of visible light, the material of wherein said first electrode and second electrode for example be transparent conductive oxide (transparent conductive oxide, TCO).
Aforesaid infrared light is converted to the solar cell of visible light, the material of wherein said p type semiconductor layer for example is amorphous silicon or microcrystal silicon.
Aforesaid infrared light is converted to the solar cell of visible light, the material of wherein said n type semiconductor layer for example is amorphous silicon or microcrystal silicon.
Aforesaid infrared light is converted to the solar cell of visible light, the material of wherein said transparency carrier for example is a glass.
Aforesaid infrared light is converted to the solar cell of visible light, can also between first electrode and n type semiconductor layer, disposes semi-transparent metal layer.
Aforesaid infrared light is converted to the solar cell of visible light, the material of wherein said semi-transparent metal layer for example is aluminium or transition metal (transition metal).
The utility model compared with prior art has tangible advantage and beneficial effect.By technique scheme, of the present utility model infrared light is converted to the solar cell of visible light, have following advantage at least:
One, the solar cell that infrared light is converted to visible light of the present utility model, configuration infrared light conversion layer is converted to the absorbable visible light of intrinsic layer with infrared light between the p type semiconductor layer and second electrode, therefore can promote the photoelectric conversion efficiency of solar cell significantly.
Two, the solar cell that infrared light is converted to visible light of the present utility model, owing to the infrared light in the sunlight that exposes to solar cell is converted into visible light, the heat history effect that therefore can reduce infrared light significantly and caused, and then improve the usefulness of solar cell.
Three, the solar cell that infrared light is converted to visible light of the present utility model, be converted into green glow or bluish-green mixed light as if the infrared light in the sunlight that exposes to solar cell, then solar cell need can be applied to the agricultural or the industry of flowers and plants of more green glow or bluish-green mixed light, cultivates to help crops and flowers.
For above-mentioned feature and advantage of the present utility model can be become apparent, embodiment cited below particularly, and cooperate appended graphic being described in detail below.
Description of drawings
Fig. 1 is the cross-sectional schematic that infrared light is converted to the solar cell of visible light of the utility model one embodiment.
Fig. 2 is the cross-sectional schematic that infrared light is converted to the solar cell of visible light of another embodiment of the utility model.
10,20: solar cell 100: transparency carrier
102,104: electrode 106:p type semiconductor layer
108: infrared light conversion layer 110:n type semiconductor layer
112: amorphous silicon intrinsic layer 114: sunlight
116: semi-transparent metal layer
Embodiment
For further setting forth the utility model is to reach technological means and the effect that predetermined goal of the invention is taked, below in conjunction with accompanying drawing and preferred embodiment, to describing in detail according to its embodiment of solar cell that infrared light is converted to visible light that the utility model proposes, step, structure, feature and effect thereof.
Seeing also shown in Figure 1ly, is the cross-sectional schematic that infrared light is converted to the solar cell of visible light of the utility model one embodiment.The solar cell 10 that infrared light is converted to visible light of the utility model one embodiment comprises: transparency carrier 100, electrode 102, electrode 104, p type semiconductor layer 106, infrared light conversion layer 108, n type semiconductor layer 110 and amorphous silicon intrinsic layer 112.
The material of this transparency carrier 100 for example is a glass.This electrode 102 is disposed on the transparency carrier 100.The material of electrode 102 for example is a transparent conductive oxide.Above-mentioned transparent conductive oxide can be indium tin oxide (indium tin oxide, ITO), aluminum zinc oxide (Al doped ZnO, AZO), indium-zinc oxide (indium zinc oxide, IZO) or other transparent conductive materials.Electrode 104 is disposed between electrode 102 and the transparency carrier 100.The material of electrode 104 for example is transparent conductive oxide (for example indium tin oxide, aluminum zinc oxide, indium-zinc oxide or other transparent conductive material).
This p type semiconductor layer 106 is disposed between electrode 102 and the electrode 104.The material of p type semiconductor layer 106 for example is amorphous silicon or microcrystal silicon, and the material that is mixed in the p type semiconductor layer 106 for example is the group that is selected from IIIA family element in the periodic table of elements, and it can be boron (B), aluminium (Al), gallium (Ga), indium (In) or thallium (Tl).
This n type semiconductor layer 110 is disposed between p type semiconductor layer 106 and the electrode 102.The material of n type semiconductor layer 110 is amorphous silicon or microcrystal silicon for example, and the material that is mixed in the n type semiconductor layer 110 for example is the group that is selected from VA family element in the periodic table of elements, and it can be phosphorus (P), arsenic (As), antimony (Sb) or bismuth (Bi).
This amorphous silicon intrinsic layer 112 is disposed between p type semiconductor layer 106 and the n type semiconductor layer 110.Amorphous silicon intrinsic layer 112 produces electronics-right main region in electric hole as light.
This infrared light conversion layer 108 is disposed between p type semiconductor layer 106 and the electrode 104, in order to infrared light is converted to visible light.The material of infrared light conversion layer 108 for example is rare earth element, for example lanthanide series.In detail, for general solar cell, when solar irradiation is incident upon solar cell, owing to be that the intrinsic layer of material can't absorb the infrared light (it accounts for 50% in sunlight) in the sunlight with the amorphous silicon, therefore infrared light can directly pass solar cell and can't be utilized, and makes the photoelectric conversion efficiency of solar cell to promote significantly.Yet, in the present embodiment, when sunlight 114 passed transparency carrier 100 and exposes to infrared light conversion layer 108, infrared light conversion layer 108 can be by the visible light that solar cell utilized with being converted to by the infrared light that solar cell utilized in the sunlight 114.Because amorphous silicon intrinsic layer 112 has preferable absorptivity for visible light, therefore be converted to visible light by infrared light conversion layer 108 and when entering amorphous silicon intrinsic layer 112 when the infrared light in the sunlight 114, compare with general solar cell, increase the amount of the visible light that exposes to amorphous silicon intrinsic layer 112, thereby promoted the photoelectric conversion efficiency of solar cell 10.
In addition, visible light with respect to other colors, because the intrinsic layer in the solar cell 10 is to be material with the amorphous silicon, and the amorphous silicon material has preferable absorptivity (having best absorptivity for green glow) for green glow and bluish-green mixed light, therefore can wait by kind, the proportion of composing of adjusting infrared light conversion layer 108 middle rare earth elements the infrared light in the sunlight 114 is converted to green glow or bluish-green mixed light, to promote the photoelectric conversion efficiency of solar cell 10 further.
Special one what carry is that through after the solar cell 10, unabsorbed part can be utilized further through green glow that infrared light conversion layer 108 is converted to or bluish-green mixed light.For instance, form through infrared light conversion layer 108 conversion and unabsorbed green glow or bluish-green mixed light can mix with the unabsorbed visible light that originally passes solar cell 10 and produce the light of different colours.Therefore, if solar cell 10 is applied in the architectural design, then can looks actual demand and adjust and present the light that is different from white light.In addition, as if the agricultural or the industry of flowers and plants that solar cell 10 need to be applied to more green glow or bluish-green mixed light, then can help crops and flowers to cultivate.
Moreover, in the present embodiment, owing to the infrared light in the sunlight 114 that exposes to solar cell 10 has been converted into visible light, the heat history effect that is produced when therefore infrared light exposes to solar cell can be reduced significantly, makes solar cell 10 still can maintain the temperature identical with context after sunlight 114 irradiations.In addition,, therefore can further avoid causing the problem of photoelectric conversion efficiency reduction, and then reach the purpose of the usefulness that promotes solar cell because of the heat history effect because the heat history effect is reduced significantly.
Seeing also shown in Figure 2ly, is the cross-sectional schematic that infrared light is converted to the solar cell of visible light of another embodiment of the utility model.In another embodiment, can also between electrode 102 and n type semiconductor layer 110, dispose semi-transparent metal layer 116 (as shown in Figure 2).The material of semi-transparent metal layer 116 for example is aluminium or transition metal.In the present embodiment, when sunlight 114 exposed to solar cell 20, unabsorbed green glow or bluish-green mixed light and other unabsorbed visible lights can pass solar cell 20 through semi-transparent metal layer 116.At this moment, can control the color and the amount of light of the light that passes solar cell 20 by the thickness of adjusting semi-transparent metal layer 116.
In detail, if the thinner thickness of semi-transparent metal layer 116, the light intensity that then passes solar cell 20 is bigger, and contains more green glow or bluish-green mixed light, therefore need can be applied to the agricultural or the industry of flowers and plants of more green glow or bluish-green mixed light equally, cultivate to help crops and flowers; If the thickness of semi-transparent metal layer 116 is thicker, the light intensity that then passes solar cell 20 is less, and contains less green glow or bluish-green mixed light.
In addition, the visible light of part also can be reflected by semi-transparent metal layer 116 and enter amorphous silicon intrinsic layer 112 once more, and is absorbed by amorphous silicon intrinsic layer 112.
Though the utility model discloses as above with preferred embodiment, so be not in order to limit the scope that the utility model is implemented, the simple equivalent of doing according to claims of the present utility model and description changes and modification, still belongs in the scope of technical solutions of the utility model.
Claims (10)
1. one kind is converted to the solar cell of visible light with infrared light, it is characterized in that comprising:
One transparency carrier;
One first electrode is disposed on this transparency carrier;
One second electrode is disposed between this first electrode and this transparency carrier;
One p type semiconductor layer is disposed between this first electrode and this second electrode;
One infrared light conversion layer is disposed between this p type semiconductor layer and this second electrode, in order to infrared light is converted to a visible light;
One n type semiconductor layer is disposed between this p type semiconductor layer and this first electrode; And
One amorphous silicon intrinsic layer is disposed between this p type semiconductor layer and this n type semiconductor layer.
2. as claimed in claim 1 infrared light is converted to the solar cell of visible light, the material that it is characterized in that wherein said infrared light conversion layer is a rare earth element.
3. as claimed in claim 2 infrared light is converted to the solar cell of visible light, it is characterized in that wherein said rare earth element is to draw together lanthanide series.
4. as claimed in claim 1 infrared light is converted to the solar cell of visible light, it is characterized in that wherein said visible light is green glow or bluish-green mixed light.
5. as claimed in claim 1 infrared light is converted to the solar cell of visible light, it is characterized in that the material of wherein said first electrode and this second electrode is a transparent conductive oxide.
6. as claimed in claim 1 infrared light is converted to the solar cell of visible light, the material that it is characterized in that wherein said p type semiconductor layer is amorphous silicon or microcrystal silicon.
7. as claimed in claim 1 infrared light is converted to the solar cell of visible light, the material that it is characterized in that wherein said n type semiconductor layer is amorphous silicon or microcrystal silicon.
8. as claimed in claim 1 infrared light is converted to the solar cell of visible light, the material that it is characterized in that wherein said transparency carrier is a glass.
9. as claimed in claim 1 infrared light is converted to the solar cell of visible light, it is characterized in that also comprising a semi-transparent metal layer, be disposed between this first electrode and this n type semiconductor layer.
10. as claimed in claim 9 infrared light is converted to the solar cell of visible light, the material that it is characterized in that wherein said semi-transparent metal layer is aluminium or transition metal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010206294364U CN201904361U (en) | 2010-11-24 | 2010-11-24 | Solar battery capable of converting infrared light into visible light |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010206294364U CN201904361U (en) | 2010-11-24 | 2010-11-24 | Solar battery capable of converting infrared light into visible light |
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| Publication Number | Publication Date |
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| CN201904361U true CN201904361U (en) | 2011-07-20 |
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| CN2010206294364U Expired - Fee Related CN201904361U (en) | 2010-11-24 | 2010-11-24 | Solar battery capable of converting infrared light into visible light |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102593245A (en) * | 2012-02-13 | 2012-07-18 | 常州大学 | Method for preparing high efficient low cost crystalline silicon solar cell |
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2010
- 2010-11-24 CN CN2010206294364U patent/CN201904361U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102593245A (en) * | 2012-02-13 | 2012-07-18 | 常州大学 | Method for preparing high efficient low cost crystalline silicon solar cell |
| CN102593245B (en) * | 2012-02-13 | 2014-07-23 | 常州大学 | Method for preparing high efficient low cost crystalline silicon solar cell |
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| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110720 Termination date: 20141124 |
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| EXPY | Termination of patent right or utility model |