CN201708168U - Solar battery - Google Patents

Solar battery Download PDF

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Publication number
CN201708168U
CN201708168U CN 201020270939 CN201020270939U CN201708168U CN 201708168 U CN201708168 U CN 201708168U CN 201020270939 CN201020270939 CN 201020270939 CN 201020270939 U CN201020270939 U CN 201020270939U CN 201708168 U CN201708168 U CN 201708168U
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China
Prior art keywords
layer
amorphous silicon
type
indium gallium
copper indium
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Expired - Fee Related
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CN 201020270939
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Chinese (zh)
Inventor
赵一辉
贺方涓
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Henan Argus Power Technology Co Ltd
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Henan Argus Power Technology Co Ltd
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Abstract

The utility model discloses a solar battery, which structurally comprises a substrate layer/a back electrode layer/a P+ layer/ a P-type copper indium gallium selenide film layer/an N-type copper indium gallium selenide buffer layer/an N+ layer/a P-type noncrystalline silicon layer/an I-type noncrystalline silicon layer/a N-type noncrystalline silicon layer/a TCO layer. noncrystalline silicon P-I-N combined layer of the film solar battery is reasonable in thickness design, and near infrared spectrum energy can be absorbed by a copper indium gallium selenide P-N combined layer, thereby the power of the film solar battery is greatly improved. In addition, the P+ layer and the N+ layer are additionally arranged to enhance the drifting velocity and the flux of a carrier in a photovoltaic component and improve the power of the film solar energy. The film solar battery generates the power about 1.5% higher than a currently similar film solar battery in a double-combined-layer structure on average, and has the advantages of high reliability, low manufacturing price and the like.

Description

Solar cell
Technical field
The utility model belongs to photovoltaic solar battery technology field, is specifically related to a kind of solar cell.
Background technology
CIGS is the abbreviation of copper indium gallium selenium solar cell, and the series-connected cell of being made up of CIGS and a-Si hull cell is owing to have advantages such as efficient height, production process easy operating and improvement, from beginning to occur just having caused people's very big concern.Disclose the multijunction solar cell that a kind of CIGS and a-Si hull cell are composed in series in publication number is 6368892 United States Patent (USP), its structure is: substrate layer/dorsum electrode layer/CIS(or CIGS) layer/n type conductive layer/P-I-N ties layer/preceding electrode layer.But the module design of the many knots of existing a-Si/CIGS series connection layer solar cell is reasonable not enough, and its present photoelectric conversion efficiency has only about 10%.
The utility model content
The purpose of this utility model provides a kind of solar cell.
In order to realize above purpose, the technical scheme that the utility model adopted is: a kind of solar cell, comprise substrate layer, be arranged on dorsum electrode layer, the tco layer on the substrate layer and be arranged on dorsum electrode layer and tco layer between the solar cell module, described solar cell module comprises a Copper Indium Gallium Selenide P-N knot layer and an amorphous silicon P-I-N knot layer, is provided with heavily doped P between the P type CIGS thin-film layer of described Copper Indium Gallium Selenide P-N knot layer and the described dorsum electrode layer +Layer is provided with heavily doped N between the P type amorphous silicon layer of the N type Copper Indium Gallium Selenide resilient coating of described Copper Indium Gallium Selenide P-N knot layer and described amorphous silicon P-I-N knot layer +Layer, the adjacent setting of N type amorphous silicon layer of described amorphous silicon P-I-N knot layer with described tco layer, the structure of this solar cell is: substrate layer/dorsum electrode layer/P +Layer/P type CIGS thin-film layer/N type Copper Indium Gallium Selenide resilient coating/N +Layer/P type amorphous silicon layer/I type amorphous silicon layer/N type amorphous silicon layer/tco layer.
Further, N type Copper Indium Gallium Selenide resilient coating and N +Be provided with conductive layer between the layer.
Conductive layer is the n-ZnO:Al layer, and the thickness of n-ZnO:Al layer is 50nm～150nm.
The thickness of amorphous silicon P-I-N knot layer is 100nm～360nm.
The thickness ratio of P type amorphous silicon layer, I type amorphous silicon layer and N type amorphous silicon layer is in the amorphous silicon P-I-N knot layer: P type amorphous silicon layer: I type amorphous silicon layer: N type amorphous silicon layer=(1～2): (10～15): (2～4).
Heavily doped P +The thickness of layer is 5nm～50nm.
Heavily doped P +The density of electric charge carrier is 10 in the layer 20G/cm 3～10 21 G/cm 3
Heavily doped N +The thickness of layer is 5nm～50nm.
Heavily doped N +The density of electric charge carrier is 10 in the layer 21G/cm 3～10 22G/cm 3
The thickness of P type CIGS thin-film layer is 1.0um～2.5um in the Copper Indium Gallium Selenide P-N knot layer.
The thickness of N type Copper Indium Gallium Selenide resilient coating is 50nm～200nm in the Copper Indium Gallium Selenide P-N knot layer.
The amorphous silicon P-I-N of the utility model thin-film solar cells knot layer thickness is reasonable in design, and the near infrared light spectrum energy can fully be absorbed by Copper Indium Gallium Selenide P-N knot layer, so the power of the thin-film solar cells that provides of the utility model improves greatly.In addition, between the P type CIGS thin-film layer of Copper Indium Gallium Selenide P-N knot layer and dorsum electrode layer, be provided with heavily doped P +Layer is provided with heavily doped N between the P type amorphous silicon layer that the N type Copper Indium Gallium Selenide resilient coating and the amorphous silicon P-I-N of Copper Indium Gallium Selenide P-N knot layer tie layer +Layer has strengthened drift velocity and the circulation of carrier in photovoltaic module, has improved the power of thin-film solar cells.It is about 1.5% that the thin-film solar cells of the more present binode layer structure of the same type of the power that thin-film solar cells produced that the utility model provides on average exceeds, and conversion efficiency can reach more than 11.5%.The thin-film solar cells that the utility model provides also has advantages such as the high and manufacturing price of reliability is low.
Description of drawings
Fig. 1 is the structural representation of a kind of embodiment of the utility model;
Fig. 2 is the structural representation of the another kind of embodiment of the utility model;
Fig. 3 is the energy frequency band curve chart of embodiment 1.
Embodiment
Embodiment 1
As shown in Figure 1, the solar cell of a kind of embodiment of the utility model, the structure of this solar cell is: glass lined bottom 11/Mo dorsum electrode layer 10/P +Layer 9/P type CIGS thin-film layer 8/N type Copper Indium Gallium Selenide resilient coating 7/N +Layer 6/P type amorphous silicon layer 5/I type amorphous silicon layer 4/N type amorphous silicon layer 3/ZnO:Al layer 2/ front glass lining 1, sunlight glass lining 1 is in the past injected, and passes through ZnO:Al layer 2, N type amorphous silicon layer 3, I type amorphous silicon layer 4, P type amorphous silicon layer 5, N successively + Layer 6, N type Copper Indium Gallium Selenide resilient coating 7, P type CIGS thin-film layer 8 are afterwards by P +Layer 9 absorbs fully.
Wherein, the thickness of amorphous silicon P-I-N knot layer is 100nm.The thickness ratio of P type amorphous silicon layer 5, I type amorphous silicon layer 4 and N type amorphous silicon layer 3 is in the amorphous silicon P-I-N knot layer: P type amorphous silicon layer 5:I type amorphous silicon layer 4:N type amorphous silicon layer 3=1:10:4.Heavily doped P +The thickness of layer 9 is 10nm, heavily doped P +The density of electric charge carrier is 10 in the layer 9 20G/cm 3Heavily doped N +The thickness of layer 6 is 5nm, heavily doped N +The density of electric charge carrier is 10 in the layer 6 21 G/cm 3The thickness of P type CIGS thin-film layer 8 is 2.5um in the Copper Indium Gallium Selenide P-N knot layer, and the thickness of N type Copper Indium Gallium Selenide resilient coating 7 is 50nm in the Copper Indium Gallium Selenide P-N knot layer.
Embodiment 2
The solar battery structure of present embodiment is identical with the solar battery structure of embodiment 1, and structure is seen shown in Figure 1, and its structure is: glass lined bottom 11/Mo dorsum electrode layer 10/P +Layer 9/P type CIGS thin-film layer 8/N type Copper Indium Gallium Selenide resilient coating 7/N +Layer 6/P type amorphous silicon layer 5/I type amorphous silicon layer 4/N type amorphous silicon layer 3/ZnO:Al layer 2/ front glass lining 1, sunlight glass lining 1 is in the past injected, and passes through ZnO:Al layer 2, N type amorphous silicon layer 3, I type amorphous silicon layer 4, P type amorphous silicon layer 5, N successively + Layer 6, N type Copper Indium Gallium Selenide resilient coating 7, P type CIGS thin-film layer 8 are afterwards by P +Layer 9 absorbs fully.
Difference is: the thickness of amorphous silicon P-I-N knot layer is 360nm.The thickness ratio of P type amorphous silicon layer 5, I type amorphous silicon layer 4 and N type amorphous silicon layer 3 is in the amorphous silicon P-I-N knot layer: P type amorphous silicon layer 5:I type amorphous silicon layer 4:N type amorphous silicon layer 3=1:15:2.Heavily doped P +The thickness of layer 9 is 15Nm, heavily doped P +The density of electric charge carrier is 10 in the layer 9 21 G/cm 3Heavily doped N +The thickness of layer 6 is 10Nm, heavily doped N +The density of electric charge carrier is 10 in the layer 6 21 G/cm 3The thickness of P type CIGS thin-film layer 8 is 1.0um in the Copper Indium Gallium Selenide P-N knot layer, and the thickness of N type Copper Indium Gallium Selenide resilient coating 7 is 200nm in the Copper Indium Gallium Selenide P-N knot layer.
Embodiment 3
The solar battery structure of present embodiment is identical with the solar battery structure of embodiment 1, and structure is seen shown in Figure 1, and its structure is: glass lined bottom 11/Mo dorsum electrode layer 10/P +Layer 9/P type CIGS thin-film layer 8/N type Copper Indium Gallium Selenide resilient coating 7/N +Layer 6/P type amorphous silicon layer 5/I type amorphous silicon layer 4/N type amorphous silicon layer 3/ZnO:Al layer 2/ front glass lining 1, sunlight glass lining 1 is in the past injected, and passes through ZnO:Al layer 2, N type amorphous silicon layer 3, I type amorphous silicon layer 4, P type amorphous silicon layer 5, N successively + Layer 6, N type Copper Indium Gallium Selenide resilient coating 7, P type CIGS thin-film layer 8 are afterwards by P +Layer 9 absorbs fully.
Difference is: the thickness of amorphous silicon P-I-N knot layer is 200nm.The thickness ratio of P type amorphous silicon layer 5, I type amorphous silicon layer 4 and N type amorphous silicon layer 3 is in the amorphous silicon P-I-N knot layer: P type amorphous silicon layer 5:I type amorphous silicon layer 4:N type amorphous silicon layer 3=2:12:3.Heavily doped P +The thickness of layer 9 is 50nm, heavily doped P +The density of electric charge carrier is 10 in the layer 9 21 G/cm 3Heavily doped N +The thickness of layer 6 is 50Nm, heavily doped N +The density of electric charge carrier is 10 in the layer 6 22G/cm 3The thickness of P type CIGS thin-film layer 8 is 1.5um in the Copper Indium Gallium Selenide P-N knot layer, and the thickness of N type Copper Indium Gallium Selenide resilient coating 7 is 100nm in the Copper Indium Gallium Selenide P-N knot layer.
Embodiment 4
As shown in Figure 2, the solar cell of another kind of embodiment of the present utility model, the structure of this solar cell is: glass lined bottom 11/Mo dorsum electrode layer 10/P +Layer 9/P type CIGS thin-film layer 8/N type Copper Indium Gallium Selenide resilient coating 7/n-ZnO:Al layer 16/N +Layer 6/P type amorphous silicon layer 5/I type amorphous silicon layer 4/N type amorphous silicon layer 3/ZnO:Al layer 2/ front glass lining 1, sunlight glass lining 1 is in the past injected, and passes through ZnO:Al layer 2, N type amorphous silicon layer 3, I type amorphous silicon layer 4, P type amorphous silicon layer 5, N successively + Layer 6, n-ZnO:Al layer 16, N type Copper Indium Gallium Selenide resilient coating 7, P type CIGS thin-film layer 8 are afterwards by P +Layer 9 absorbs fully.
Wherein, the thickness of amorphous silicon P-I-N knot layer is 100nm.The thickness ratio of P type amorphous silicon layer 5, I type amorphous silicon layer 4 and N type amorphous silicon layer 3 is in the amorphous silicon P-I-N knot layer: P type amorphous silicon layer 5:I type amorphous silicon layer 4:N type amorphous silicon layer 3=2:12:3.Heavily doped P +The thickness of layer 9 is 10nm, heavily doped P +The density of electric charge carrier is 10 in the layer 9 20G/cm 3Heavily doped N +The thickness of layer 6 is 5nm, heavily doped N +The density of electric charge carrier is 10 in the layer 6 21 G/cm 3The thickness of P type CIGS thin-film layer 8 is 2.5um in the Copper Indium Gallium Selenide P-N knot layer, and the thickness of N type Copper Indium Gallium Selenide resilient coating 7 is 50nm in the Copper Indium Gallium Selenide P-N knot layer.The material of N type Copper Indium Gallium Selenide resilient coating 7 is ZnS in the Copper Indium Gallium Selenide P-N knot layer.The thickness of n-ZnO:Al layer 16 is 50nm.
Embodiment 5
The solar battery structure of present embodiment is identical with the solar battery structure of embodiment 4, and structure is seen shown in Figure 2, and difference is that the thickness of n-ZnO:Al layer 16 is 150nm.
In Fig. 3, Cb, Vb represent to set up P +Layer and N +The layer after battery can be with curve, promptly the utility model embodiment 1 can be with curve, Ca, Va represent not to be provided with P +Layer and N +When layer battery can be with curve, C represents the conduction band, V represents electricity price band, E F, bP is set up in expression +Layer and N +The Fermi level of the battery behind the layer, E F, aExpression is not provided with P +Layer and N +The Fermi level of battery during layer.As can be seen from Figure 3, Cb, Vb energy barrier are narrower, and have higher energy barrier.

Claims (12)

1. solar cell, comprise substrate layer, be arranged on dorsum electrode layer, the tco layer on the substrate layer and be arranged on dorsum electrode layer and tco layer between the solar cell module, it is characterized in that: described solar cell module comprises a Copper Indium Gallium Selenide P-N knot layer and an amorphous silicon P-I-N knot layer, is provided with heavily doped P between the P type CIGS thin-film layer of described Copper Indium Gallium Selenide P-N knot layer and the described dorsum electrode layer +Layer is provided with heavily doped N between the P type amorphous silicon layer of the N type Copper Indium Gallium Selenide resilient coating of described Copper Indium Gallium Selenide P-N knot layer and described amorphous silicon P-I-N knot layer +Layer, the adjacent setting of N type amorphous silicon layer of described amorphous silicon P-I-N knot layer with described tco layer, the structure of this solar cell is: substrate layer/dorsum electrode layer/P +Layer/P type CIGS thin-film layer/N type Copper Indium Gallium Selenide resilient coating/N +Layer/P type amorphous silicon layer/I type amorphous silicon layer/N type amorphous silicon layer/tco layer.
2. solar cell according to claim 1 is characterized in that: described N type Copper Indium Gallium Selenide resilient coating and described N +Be provided with conductive layer between the layer.
3. solar cell according to claim 2 is characterized in that: described conductive layer is the n-ZnO:Al layer.
4. solar cell according to claim 3 is characterized in that: the thickness of described n-ZnO:Al layer is 50nm～150nm.
5. solar cell according to claim 1 and 2 is characterized in that: the thickness of described amorphous silicon P-I-N knot layer is 100nm～360nm.
6. solar cell according to claim 1 and 2 is characterized in that: the thickness ratio of P type amorphous silicon layer, I type amorphous silicon layer and N type amorphous silicon layer is in the described amorphous silicon P-I-N knot layer: P type amorphous silicon layer: I type amorphous silicon layer: N type amorphous silicon layer=(1～2): (10～15): (2～4).
7. solar cell according to claim 1 and 2 is characterized in that: described heavily doped P +The thickness of layer is 5nm～50nm.
8. solar cell according to claim 7 is characterized in that: described heavily doped P +The density of electric charge carrier is 10 in the layer 20G/cm 3～10 21 G/cm 3
9. solar cell according to claim 1 and 2 is characterized in that: described heavily doped N +The thickness of layer is 5nm～50nm.
10. solar cell according to claim 9 is characterized in that: described heavily doped N +The density of electric charge carrier is 10 in the layer 21G/cm 3～10 22G/cm 3
11. solar cell according to claim 1 and 2 is characterized in that: the thickness of P type CIGS thin-film layer is 1.0um～2.5um in the described Copper Indium Gallium Selenide P-N knot layer.
12. solar cell according to claim 1 and 2 is characterized in that: the thickness of N type Copper Indium Gallium Selenide resilient coating is 50nm～200nm in the described Copper Indium Gallium Selenide P-N knot layer.
CN 201020270939 2010-07-26 2010-07-26 Solar battery Expired - Fee Related CN201708168U (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104319316A (en) * 2014-10-31 2015-01-28 中国科学院上海微系统与信息技术研究所 Efficient film crystalline silicon solar cell and automatic energy chip integration technology thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104319316A (en) * 2014-10-31 2015-01-28 中国科学院上海微系统与信息技术研究所 Efficient film crystalline silicon solar cell and automatic energy chip integration technology thereof
CN104319316B (en) * 2014-10-31 2017-04-05 中国科学院上海微系统与信息技术研究所 Efficient film crystal silicon solar battery and its autonomous power chip integrated technology

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Termination date: 20130726