CN101908568A - Thin-film photovoltaic solar cell - Google Patents
Thin-film photovoltaic solar cell Download PDFInfo
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- CN101908568A CN101908568A CN 201010236616 CN201010236616A CN101908568A CN 101908568 A CN101908568 A CN 101908568A CN 201010236616 CN201010236616 CN 201010236616 CN 201010236616 A CN201010236616 A CN 201010236616A CN 101908568 A CN101908568 A CN 101908568A
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Abstract
The invention discloses a thin-film photovoltaic solar cell comprising a substrate layer/a back electrode layer/a P+ layer/a P type CIGS (Copper Indium Gallium Selenide) thin film layer/an N type CIGS buffer layer/a P type amorphous silicon layer/an I type amorphous silicon layer/an N type amorphous silicon layer/an N+ layer/a TCO (Transparent Conductive Oxide) layer. In the invention, the thickness of an amorphous silicon P-I-N junction tandem of the solar cell is reasonally designed, and the infrared spectrum energy can be fully absorbed by a CIGS P-N junction tandem, thus the power is largely improved; in addition, a high doping P+ layer is arranged between a dual-junction tandem P type CIGS thin film layer and the back electrode layer, and a high doping N+ payer is arranged between a dual-junction tandem N type amorphous silicon layer and the TCO layer so as to increase the drift velocity and the liquidity of carriers in a photovoltaic component and improve the power of the thin-film photovoltaic solar cell. In the invention, the power generated by the thin-film photovoltaic solar cell is improved by about 1.5% averagely compared with the power of the present thin-film photovoltaic solar cell with the same type dual-junction tandem structure; in addition, the invention further has the advantages of high reliability, low manufacturing cost and the like.
Description
Technical field
The invention belongs to photovoltaic solar battery technology field, be specifically related to a kind of thin-film photovoltaic solar cell.
Background technology
CIGS is the abbreviation of copper indium gallium selenium solar cell, and the series-connected cell of being made up of CIGS and a-Si hull cell is owing to have advantages such as efficient height, production process easy operating and improvement, from beginning to occur just having caused people's very big concern.Disclose the multijunction solar cell that a kind of CIGS and a-Si hull cell are composed in series in publication number is 6368892 United States Patent (USP), its structure is: substrate layer/dorsum electrode layer/CIS(or CIGS) layer/n type conductive layer/P-I-N ties layer/preceding electrode layer.But the module design of the many knots of existing a-Si/CIGS series connection layer solar cell is reasonable not enough, and its present photoelectric conversion efficiency has only about 10%.
Summary of the invention
The purpose of this invention is to provide a kind of high efficiency, thin-film photovoltaic solar cell cheaply.
In order to realize above purpose, the technical solution adopted in the present invention is: a kind of thin-film photovoltaic solar cell, comprise substrate layer, be arranged on dorsum electrode layer, the tco layer on the substrate layer and be arranged on dorsum electrode layer and tco layer between the solar cell module, described solar cell module comprises a binode layer P-N/P-I-N by Copper Indium Gallium Selenide P-N knot layer and the adjacent setting of amorphous silicon P-I-N knot layer, is provided with heavily doped P between the P type CIGS thin-film layer of described binode layer and the described dorsum electrode layer
+Layer is provided with heavily doped N between the N type amorphous silicon layer of described binode layer and the described tco layer
+Layer, the structure of this solar cell is: substrate layer/dorsum electrode layer/P
+Layer/P type CIGS thin-film layer/N type Copper Indium Gallium Selenide resilient coating/P type amorphous silicon layer/I type amorphous silicon layer/N type amorphous silicon layer/N
+Layer/tco layer.
Further, the thickness of amorphous silicon P-I-N knot layer is 100nm～360nm.
The thickness ratio of P type amorphous silicon layer, I type amorphous silicon layer and N type amorphous silicon layer is in the amorphous silicon P-I-N knot layer: P type amorphous silicon layer: I type amorphous silicon layer: N type amorphous silicon layer=(1～2): (10～15): (2～4).
Heavily doped P
+The thickness of layer is 5nm～50nm.
Heavily doped P
+The density of electric charge carrier is 10 in the layer
20G/cm
3～10
21G/cm
3
Heavily doped P
+Layer is 1020～1021 g/cm by selenizing molybdenum or density
3The method deposition of copper vacancy layer by cosputtering or coevaporation make.
Heavily doped N
+The thickness of layer is 1.5nm～15nm.
Heavily doped N
+The density of electric charge carrier is 10 in the layer
20G/cm
3～10
22G/cm
3
Heavily doped N
+Layer is made by hydrogenation phosphorus deposition.
The thickness of P type CIGS thin-film layer is 1.0um～2.5um in the Copper Indium Gallium Selenide P-N knot layer.
The thickness of N type Copper Indium Gallium Selenide resilient coating is 50nm～200nm in the Copper Indium Gallium Selenide P-N knot layer.
The material of N type Copper Indium Gallium Selenide resilient coating is ZnS, ZnSe or ZnIn in the Copper Indium Gallium Selenide P-N knot layer
2Se
3
The amorphous silicon P-I-N knot layer thickness of thin-film photovoltaic solar cell of the present invention is reasonable in design, and the near infrared light spectrum energy can fully be absorbed by Copper Indium Gallium Selenide P-N knot layer, and therefore the power of thin-film photovoltaic solar cell provided by the invention improves greatly.In addition, between the P of binode layer type CIGS thin-film layer and described dorsum electrode layer, be provided with heavily doped P
+Layer is provided with heavily doped N between the N of described binode layer type amorphous silicon layer and described tco layer
+Layer has strengthened drift velocity and the circulation of carrier in photovoltaic module, has improved the power of thin-film photovoltaic solar cell.It is about 1.5% that the thin-film photovoltaic solar cell of the more present binode layer structure of the same type of the power that thin-film photovoltaic solar cell provided by the invention produced on average improves, and conversion efficiency can reach more than 11.5%.Thin-film photovoltaic solar cell provided by the invention also has advantages such as the high and manufacturing price of reliability is low.
Description of drawings
Fig. 1 is the structural representation of an embodiment of the present invention;
Fig. 2 is the energy frequency band curve chart of embodiment 1.
Embodiment
As shown in Figure 1, the thin-film photovoltaic solar cell of an embodiment of the present invention, the structure of this solar cell is: glass lined bottom 11/Mo dorsum electrode layer 10/P
+Layer 9/P type CIGS thin-film layer 8/N type Copper Indium Gallium Selenide resilient coating 7/P type amorphous silicon layer 6/I type amorphous silicon layer 5/N type amorphous silicon layer 4/N
+Layer 3/ZnO:Al layer 2/ front glass lining, ZnO:Al layer 2 is the window electrode layer, and thickness is 0.6um, and sunlight glass lining 1 is in the past injected, and passes through ZnO:Al layer 2, N successively
+Layer 3, N type amorphous silicon layer 4, I type amorphous silicon layer 5, P type amorphous silicon layer 6, N type Copper Indium Gallium Selenide resilient coating 7, P type CIGS thin-film layer 8 are afterwards by P
+Layer 9 absorbs fully.
Wherein, the thickness of amorphous silicon P-I-N knot layer is 100nm.The thickness ratio of P type amorphous silicon layer 6, I type amorphous silicon layer 5 and N type amorphous silicon layer 4 is in the amorphous silicon P-I-N knot layer: P type amorphous silicon layer 6:I type amorphous silicon layer 5:N type amorphous silicon layer 4=1:10:4.Heavily doped P
+The thickness of layer 9 is 5nm, heavily doped P
+The density of electric charge carrier is 10 in the layer 9
21G/cm
3Heavily doped P
+Layer 9 is made by the method deposition of selenizing molybdenum by cosputtering.Heavily doped N
+The thickness of layer 3 is 15nm, heavily doped N
+The density of electric charge carrier is 10 in the layer 3
22G/cm
3Heavily doped N
+Layer 3 is made by hydrogenation phosphorus deposition.The thickness of P type CIGS thin-film layer 8 is 2.5um in the Copper Indium Gallium Selenide P-N knot layer, and the thickness of N type Copper Indium Gallium Selenide resilient coating 7 is 50nm in the Copper Indium Gallium Selenide P-N knot layer.The material of N type Copper Indium Gallium Selenide resilient coating 7 is ZnS in the Copper Indium Gallium Selenide P-N knot layer.
Embodiment 2
The thin-film photovoltaic solar cell structure of present embodiment is identical with the thin-film photovoltaic solar cell structure of embodiment 1, and structure is seen shown in Figure 1, and its structure is: glass lined bottom 11/Mo dorsum electrode layer 10/P
+Layer 9/P type CIGS thin-film layer 8/N type Copper Indium Gallium Selenide resilient coating 7/P type amorphous silicon layer 6/I type amorphous silicon layer 5/N type amorphous silicon layer 4/N
+Layer 3/ZnO:Al layer 2/ front glass lining, ZnO:Al layer 2 is the window electrode layer, and thickness is 0.6um, and sunlight glass lining 1 is in the past injected, and passes through ZnO:Al layer 2, N successively
+Layer 3, N type amorphous silicon layer 4, I type amorphous silicon layer 5, P type amorphous silicon layer 6, N type Copper Indium Gallium Selenide resilient coating 7, P type CIGS thin-film layer 8 are afterwards by P
+Layer 9 absorbs fully.
Difference is: the thickness of amorphous silicon P-I-N knot layer is 360nm.The thickness ratio of P type amorphous silicon layer 6, I type amorphous silicon layer 5 and N type amorphous silicon layer 4 is in the amorphous silicon P-I-N knot layer: P type amorphous silicon layer 6:I type amorphous silicon layer 5:N type amorphous silicon layer 4=1:15:2.Heavily doped P
+The thickness of layer 9 is 10nm, heavily doped P
+The density of electric charge carrier is 10 in the layer 9
21G/cm
3Heavily doped P
+Layer 9 is 1020 g/cm by density
3The method deposition of copper vacancy layer by coevaporation make.Heavily doped N
+The thickness of layer 3 is 1.5nm, heavily doped N
+The density of electric charge carrier is 10 in the layer 3
22G/cm
3Heavily doped N
+Layer 3 is made by hydrogenation phosphorus deposition.The thickness of P type CIGS thin-film layer 8 is 1.0um in the Copper Indium Gallium Selenide P-N knot layer, and the thickness of N type Copper Indium Gallium Selenide resilient coating 7 is 200nm in the Copper Indium Gallium Selenide P-N knot layer.The material of N type Copper Indium Gallium Selenide resilient coating 7 is ZnSe in the Copper Indium Gallium Selenide P-N knot layer.
Embodiment 3
The thin-film photovoltaic solar cell structure of present embodiment is identical with the thin-film photovoltaic solar cell structure of embodiment 1, and structure is seen shown in Figure 1, and its structure is: glass lined bottom 11/Mo dorsum electrode layer 10/P
+Layer 9/P type CIGS thin-film layer 8/N type Copper Indium Gallium Selenide resilient coating 7/P type amorphous silicon layer 6/I type amorphous silicon layer 5/N type amorphous silicon layer 4/N
+Layer 3/ZnO:Al layer 2/ front glass lining, ZnO:Al layer 2 is the window electrode layer, and thickness is 0.6um, and sunlight glass lining 1 is in the past injected, and passes through ZnO:Al layer 2, N successively
+Layer 3, N type amorphous silicon layer 4, I type amorphous silicon layer 5, P type amorphous silicon layer 6, N type Copper Indium Gallium Selenide resilient coating 7, P type CIGS thin-film layer 8 are afterwards by P
+Layer 9 absorbs fully.
Difference is: the thickness of amorphous silicon P-I-N knot layer is 200nm.The thickness ratio of P type amorphous silicon layer 6, I type amorphous silicon layer 5 and N type amorphous silicon layer 4 is in the amorphous silicon P-I-N knot layer: P type amorphous silicon layer 6:I type amorphous silicon layer 5:N type amorphous silicon layer 4=2:12:3.Heavily doped P
+The thickness of layer 9 is 50nm, heavily doped P
+The density of electric charge carrier is 10 in the layer 9
20G/cm
3Heavily doped P
+Layer 9 is 1021 g/cm by density
3The method deposition of copper vacancy layer by cosputtering make.Heavily doped N
+The thickness of layer 3 is 10nm, heavily doped N
+The density of electric charge carrier is 10 in the layer 3
20G/cm
3Heavily doped N
+Layer 3 is made by hydrogenation phosphorus deposition.The thickness of P type CIGS thin-film layer 8 is 1.6um in the Copper Indium Gallium Selenide P-N knot layer, and the thickness of N type Copper Indium Gallium Selenide resilient coating 7 is 100nm in the Copper Indium Gallium Selenide P-N knot layer.The material of N type Copper Indium Gallium Selenide resilient coating 7 is ZnIn in the Copper Indium Gallium Selenide P-N knot layer
2Se
3
In Fig. 2, Cb, Vb represent to set up P
+Layer and N
+The layer after battery can be with curve, promptly the embodiment of the invention 1 can be with curve, Ca, Va represent not to be provided with P
+Layer and N
+When layer battery can be with curve, C represents the conduction band, V represents electricity price band, E
F,
b P is set up in expression
+Layer and N
+The Fermi level of the battery behind the layer, E
F,
a Expression is not provided with P
+Layer and N
+The Fermi level of battery during layer.As can be seen from Figure 2, Cb, Vb energy barrier are narrower, and have higher energy barrier.
Claims (12)
1. thin-film photovoltaic solar cell, comprise substrate layer, be arranged on dorsum electrode layer, the tco layer on the substrate layer and be arranged on dorsum electrode layer and tco layer between the solar cell module, it is characterized in that: described solar cell module comprises a binode layer P-N/P-I-N by Copper Indium Gallium Selenide P-N knot layer and the adjacent setting of amorphous silicon P-I-N knot layer, is provided with heavily doped P between the P type CIGS thin-film layer of described binode layer and the described dorsum electrode layer
+Layer is provided with heavily doped N between the N type amorphous silicon layer of described binode layer and the described tco layer
+Layer, the structure of this solar cell is: substrate layer/dorsum electrode layer/P
+Layer/P type CIGS thin-film layer/N type Copper Indium Gallium Selenide resilient coating/P type amorphous silicon layer/I type amorphous silicon layer/N type amorphous silicon layer/N
+Layer/tco layer.
2. thin-film photovoltaic solar cell according to claim 1 is characterized in that: the thickness of described amorphous silicon P-I-N knot layer is 100nm～360nm.
3. thin-film photovoltaic solar cell according to claim 1 and 2 is characterized in that: the thickness ratio of P type amorphous silicon layer, I type amorphous silicon layer and N type amorphous silicon layer is in the described amorphous silicon P-I-N knot layer: P type amorphous silicon layer: I type amorphous silicon layer: N type amorphous silicon layer=(1～2): (10～15): (2～4).
4. thin-film photovoltaic solar cell according to claim 1 is characterized in that: described heavily doped P
+The thickness of layer is 5nm～50nm.
5. according to claim 1 or 4 described thin-film photovoltaic solar cells, it is characterized in that: described heavily doped P
+The density of electric charge carrier is 10 in the layer
20G/cm
3～10
21G/cm
3
6. thin-film photovoltaic solar cell according to claim 5 is characterized in that: described heavily doped P
+Layer is 1020～1021 g/cm by selenizing molybdenum or density
3The method deposition of copper vacancy layer by cosputtering or coevaporation make.
7. thin-film photovoltaic solar cell according to claim 1 is characterized in that: described heavily doped N
+The thickness of layer is 1.5nm～15nm.
8. according to claim 1 or 7 described thin-film photovoltaic solar cells, it is characterized in that: described heavily doped N
+The density of electric charge carrier is 10 in the layer
20G/cm
3～10
22G/cm
3
9. thin-film photovoltaic solar cell according to claim 8 is characterized in that: described heavily doped N
+Layer is made by hydrogenation phosphorus deposition.
10. thin-film photovoltaic solar cell according to claim 1 is characterized in that: the thickness of P type CIGS thin-film layer is 1.0um～2.5um in the described Copper Indium Gallium Selenide P-N knot layer.
11. thin-film photovoltaic solar cell according to claim 1 is characterized in that: the thickness of N type Copper Indium Gallium Selenide resilient coating is 50nm～200nm in the described Copper Indium Gallium Selenide P-N knot layer.
12. according to claim 1 or 11 described thin-film photovoltaic solar cells, it is characterized in that: the material of N type Copper Indium Gallium Selenide resilient coating is ZnS, ZnSe or ZnIn in the described Copper Indium Gallium Selenide P-N knot layer
2Se
3
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| CN 201010236616 CN101908568A (en) | 2010-07-26 | 2010-07-26 | Thin-film photovoltaic solar cell |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102231402A (en) * | 2011-07-14 | 2011-11-02 | 四川大学 | II-VI-group diluted oxide semiconductor thin film solar cell |
| CN104681654A (en) * | 2015-01-23 | 2015-06-03 | 华南师范大学 | Dual-N-layer structure amorphous silicon solar cell and preparation method of dual-N-layer structure amorphous silicon solar cell |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6121541A (en) * | 1997-07-28 | 2000-09-19 | Bp Solarex | Monolithic multi-junction solar cells with amorphous silicon and CIS and their alloys |
| CN1547262A (en) * | 2003-12-09 | 2004-11-17 | 南开大学 | Method for preparing buffer layer film of cadmium-free copper-indium-gallium-selenium thin-film solar cell |
| US20080223440A1 (en) * | 2007-01-18 | 2008-09-18 | Shuran Sheng | Multi-junction solar cells and methods and apparatuses for forming the same |
| CN201708169U (en) * | 2010-07-26 | 2011-01-12 | 河南阿格斯新能源有限公司 | Thin-film photovoltaic solar cell |
-
2010
- 2010-07-26 CN CN 201010236616 patent/CN101908568A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6121541A (en) * | 1997-07-28 | 2000-09-19 | Bp Solarex | Monolithic multi-junction solar cells with amorphous silicon and CIS and their alloys |
| CN1547262A (en) * | 2003-12-09 | 2004-11-17 | 南开大学 | Method for preparing buffer layer film of cadmium-free copper-indium-gallium-selenium thin-film solar cell |
| US20080223440A1 (en) * | 2007-01-18 | 2008-09-18 | Shuran Sheng | Multi-junction solar cells and methods and apparatuses for forming the same |
| CN201708169U (en) * | 2010-07-26 | 2011-01-12 | 河南阿格斯新能源有限公司 | Thin-film photovoltaic solar cell |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102231402A (en) * | 2011-07-14 | 2011-11-02 | 四川大学 | II-VI-group diluted oxide semiconductor thin film solar cell |
| CN102231402B (en) * | 2011-07-14 | 2013-05-08 | 四川大学 | II-VI-group diluted oxide semiconductor thin film solar cell |
| CN104681654A (en) * | 2015-01-23 | 2015-06-03 | 华南师范大学 | Dual-N-layer structure amorphous silicon solar cell and preparation method of dual-N-layer structure amorphous silicon solar cell |
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Application publication date: 20101208 |