CN201904364U - Three-layer solar cell capable of converting infrared light into visible light - Google Patents
Three-layer solar cell capable of converting infrared light into visible light Download PDFInfo
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- CN201904364U CN201904364U CN2010206294788U CN201020629478U CN201904364U CN 201904364 U CN201904364 U CN 201904364U CN 2010206294788 U CN2010206294788 U CN 2010206294788U CN 201020629478 U CN201020629478 U CN 201020629478U CN 201904364 U CN201904364 U CN 201904364U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
Abstract
The utility model relates to a three-layer solar cell capable of converting infrared light into visible light, comprising a transparent substrate, a first electrode, a second electrode, an infrared light converting layer, and layers that are sequentially arranged between the first electrode and the second electrode, including a first n-type semiconductor layer, a first amorphous silicon nature layer, a first p-type semiconductor layer, a second n-type semiconductor layer, a second amorphous nature layer, a second p-type semiconductor layer, a third n-type semiconductor layer, a microcrystalline nature layer and a third p-type semiconductor layer, wherein the first electrode is arranged on the transparent substrate; the second electrode is arranged between the first electrode and the transparent substrate; the first n-type semiconductor layer is arranged between the first amorphous silicon nature layer and the second electrode; and the infrared light converting layer is arranged between the first n-type semiconductor layer and the second electrode and is used for converting the infrared light into the visible light. The three-layer solar cell can improve photoelectric conversion efficiency.
Description
Technical field
The utility model relates to a kind of solar cell, particularly relates to a kind of three stratotype solar cells that infrared light are converted to visible light.
Background technology
Solar energy is a kind of clean pollution-free and inexhaustible energy, when solution pollution that present fossil energy faced and problem of shortage, is the focus that attracts most attention always.Because solar cell can be an electric energy with solar energy converting directly, therefore become present considerable research topic.
Silica-based solar cell is the common a kind of solar cell of industry.The principle of silica-based solar cell is that the p N-type semiconductor N is engaged with the n N-type semiconductor N, connects face to form p-n.When solar irradiation was mapped to the semiconductor with this p-n junction structure, the energy that photon provided can come out the electron excitation in the semiconductor and to produce electronics-electric hole right.Electronics and electric hole all can be subjected to the influence of built in potential, make the direction of the past electric field in electric hole move, and electronics then moves toward opposite direction.If this solar cell and load (load) are coupled together with lead, then can form a loop (loop), and can make electric current flow through load, this is the principle of solar cell power generation.
Along with environmental consciousness comes back, the notion of carbon reduction is paid attention to by everybody gradually, and the development and utilization of the renewable energy resources becomes the emphasis that development is actively dropped in countries in the world.At present, the key issue of solar cell is the lifting of its photoelectric conversion efficiency, and the photoelectric conversion efficiency that can promote solar cell promptly means the lifting of product competitiveness.
Summary of the invention
Because above-mentioned existing in prior technology defective, the purpose of this utility model is, a kind of three stratotype solar cells that infrared light are converted to visible light are provided, make it can be by the visible light that solar cell utilized, to improve photoelectric conversion efficiency with being converted to by the infrared light that solar cell utilized.
To achieve these goals, according to a kind of three stratotype solar cells that infrared light are converted to visible light that the utility model proposes, the utility model proposes and a kind of infrared light is converted to three stratotype solar cells of visible light, it comprises transparency carrier, first electrode, second electrode, infrared light conversion layer (infrared light conversion layer) and be disposed at a n type semiconductor layer between first electrode and second electrode in regular turn, the first amorphous silicon intrinsic layer (intrinsic layer), the one p type semiconductor layer, the 2nd n type semiconductor layer, the second amorphous silicon intrinsic layer, the 2nd p type semiconductor layer, the 3rd n type semiconductor layer, microcrystal silicon intrinsic layer and one the 3rd p type semiconductor layer; This first electrode is disposed on the transparency carrier; This second electrode is disposed between first electrode and the transparency carrier; The one n type semiconductor layer is between the first amorphous silicon intrinsic layer and second electrode; This infrared light conversion layer is disposed between a n type semiconductor layer and second electrode, in order to infrared light is converted to visible light.
The utility model also can be applied to the following technical measures to achieve further.
Aforesaid infrared light is converted to three stratotype solar cells of visible light, the material of wherein said infrared light conversion layer for example is rare earth (rare earth) element.
Aforesaid infrared light is converted to three stratotype solar cells of visible light, wherein said rare earth element for example is lanthanum (La) series elements.
Aforesaid infrared light is converted to three stratotype solar cells of visible light, wherein said visible light for example is green glow or bluish-green mixed light.
Aforesaid infrared light is converted to three stratotype solar cells of visible light, the material of wherein said first electrode and second electrode for example be transparent conductive oxide (transparent conductiveoxide, TCO).
Aforesaid infrared light is converted to three stratotype solar cells of visible light, the material of a wherein said n type semiconductor layer, the 2nd n type semiconductor layer and the 3rd n type semiconductor layer for example is amorphous silicon or microcrystal silicon.
Aforesaid infrared light is converted to three stratotype solar cells of visible light, the material of a wherein said p type semiconductor layer, the 2nd p type semiconductor layer and the 3rd p type semiconductor layer for example is amorphous silicon or microcrystal silicon.
Aforesaid infrared light is converted to three stratotype solar cells of visible light, the material of wherein said transparency carrier for example is a glass.
Aforesaid infrared light is converted to three stratotype solar cells of visible light, it can also dispose semi-transparent metal layer between first electrode and the 3rd p type semiconductor layer.
Aforesaid infrared light is converted to three stratotype solar cells of visible light, the material of wherein said semi-transparent metal layer for example is aluminium or transition metal (transition metal).
The utility model compared with prior art has tangible advantage and beneficial effect.By technique scheme, of the present utility model infrared light is converted to three stratotype solar cells of visible light, have following advantage at least:
One, the three stratotype solar cells that infrared light are converted to visible light of the present utility model, when sunlight when the second electrode side enters solar cell, the utility model disposes the infrared light conversion layer infrared light is converted to the absorbable visible light of intrinsic layer between a n type semiconductor layer and second electrode, therefore can promote the photoelectric conversion efficiency of solar cell significantly.
Two, the three stratotype solar cells that infrared light are converted to visible light of the present utility model, owing to the infrared light in the sunlight that exposes to solar cell is converted into visible light, the heat history effect that therefore can reduce infrared light significantly and caused, and then improve the usefulness of solar cell.
Three, the three stratotype solar cells that infrared light are converted to visible light of the present utility model, be converted into green glow or bluish-green mixed light as if the infrared light in the sunlight that exposes to solar cell, solar cell then of the present utility model need can be applied to the agricultural or the industry of flowers and plants of more green glow or bluish-green mixed light, cultivates to help crops and flowers.
For above-mentioned feature and advantage of the present utility model can be become apparent, embodiment cited below particularly, and cooperate appended graphic being described in detail below.
Description of drawings
Fig. 1 is the cross-sectional schematic of the three stratotype solar cells that infrared light are converted to visible light of the utility model one embodiment.
Fig. 2 is the cross-sectional schematic of the three stratotype solar cells that infrared light are converted to visible light of another embodiment of the utility model.
10,20: solar cell 100: transparency carrier
102,104: electrode 106,112,118:n type semiconductor layer
108,114: amorphous silicon intrinsic layer 110,116,122:p type semiconductor layer
120: microcrystal silicon intrinsic layer 124: the infrared light conversion layer
126: sunlight 128: semi-transparent metal layer
Embodiment
For further setting forth the utility model is to reach technological means and the effect that predetermined goal of the invention is taked, below in conjunction with accompanying drawing and preferred embodiment, to describing in detail according to three its embodiments of stratotype solar cell that infrared light are converted to visible light that the utility model proposes, step, structure, feature and effect thereof.
See also shown in Figure 1ly, be the cross-sectional schematic of the three stratotype solar cells that infrared light are converted to visible light of the utility model one embodiment.The solar cell 10 of the utility model one embodiment comprises transparency carrier 100, electrode 102, electrode 104, n type semiconductor layer 106, amorphous silicon intrinsic layer 108, p type semiconductor layer 110, n type semiconductor layer 112, amorphous silicon intrinsic layer 114, p type semiconductor layer 116, n type semiconductor layer 118, microcrystal silicon intrinsic layer 120, p type semiconductor layer 122 and infrared light conversion layer 124.
The material of transparency carrier 100 for example is a glass.Electrode 102 is disposed on the transparency carrier 100.The material of electrode 102 for example is a transparent conductive oxide.Above-mentioned transparent conductive oxide can be indium tin oxide (indium tin oxide, ITO), aluminum zinc oxide (Al doped ZnO, AZO), indium-zinc oxide (indium zin coxide, IZO) or other transparent conductive materials.Electrode 104 is disposed between electrode 102 and the transparency carrier 100.The material of electrode 104 for example is transparent conductive oxide (for example indium tin oxide, aluminum zinc oxide, indium-zinc oxide or other transparent conductive material).
N type semiconductor layer 106, amorphous silicon intrinsic layer 108, p type semiconductor layer 110, n type semiconductor layer 112, amorphous silicon intrinsic layer 114, p type semiconductor layer 116, n type semiconductor layer 118, microcrystal silicon intrinsic layer 120, p type semiconductor layer 122 are disposed between electrode 102 and the electrode 104 in regular turn, and n type semiconductor layer 106 is between amorphous silicon intrinsic layer 108 and electrode 104.The material of n type semiconductor layer 106,112,118 for example is amorphous silicon or microcrystal silicon, and the material that is mixed in the n type semiconductor layer 106,112,118 for example is the group that is selected from VA family element in the periodic table of elements, and it can be phosphorus (P), arsenic (As), antimony (Sb) or bismuth (Bi).The material of p type semiconductor layer 110,116,122 for example is amorphous silicon or microcrystal silicon, and the material that is mixed in the p type semiconductor layer 110,116,122 for example is the group that is selected from IIIA family element in the periodic table of elements, and it can be boron (B), aluminium (Al), gallium (Ga), indium (In) or thallium (Tl).Amorphous silicon intrinsic layer 108, amorphous silicon intrinsic layer 114 and microcrystal silicon intrinsic layer 120 be visible light absorbing all, and amorphous silicon intrinsic layer 108 has preferable absorptivity with amorphous silicon intrinsic layer 114 for green glow or bluish-green mixed light.
Infrared light conversion layer 124 is disposed between n type semiconductor layer 106 and the electrode 104, in order to infrared light is converted to visible light.The material of infrared light conversion layer 124 for example is rare earth element, for example lanthanide series.In detail, for general solar cell, when solar irradiation is incident upon solar cell, owing to be the intrinsic layer of material with the amorphous silicon and the intrinsic layer that is material all can't absorb infrared light (it accounts for 50% in sunlight) in the sunlight with the microcrystal silicon, therefore infrared light can directly pass solar cell and can't be utilized, and makes the photoelectric conversion efficiency of solar cell to promote significantly.Yet, in the present embodiment, when sunlight 126 passed transparency carrier 100 and exposes to infrared light conversion layer 124, infrared light conversion layer 124 can be by the visible light that solar cell utilized with being converted to by the infrared light that solar cell utilized in the sunlight 126.
After the infrared light in the sunlight 126 was converted to visible light by infrared light conversion layer 124, most visible light can be absorbed by amorphous silicon intrinsic layer 108 and amorphous silicon intrinsic layer 114 earlier.In addition, compare with amorphous silicon material, because the microcrystal silicon material has the absorbing wavelength scope of broad for visible light, therefore the visible light that is not absorbed by amorphous silicon intrinsic layer 108 and amorphous silicon intrinsic layer 114 can further be absorbed by the microcrystal silicon intrinsic layer 120 of below.That is to say, change and after the visible light that forms entering solar cell 10, almost can fully be absorbed with microcrystal silicon intrinsic layer 120 by amorphous silicon intrinsic layer 108, amorphous silicon intrinsic layer 114 through infrared light conversion layer 124.Compare with general solar cell, since in sunlight 126, can't be converted to by the infrared light that solar cell utilized can be by the visible light that solar cell utilized after, increased the amount of the visible light that exposes to amorphous silicon intrinsic layer 108, amorphous silicon intrinsic layer 114 and microcrystal silicon intrinsic layer 120, and visible light is almost completely absorbed with microcrystal silicon intrinsic layer 120 by amorphous silicon intrinsic layer 108, amorphous silicon intrinsic layer 114, so solar cell 10 can have higher photoelectric conversion efficiency.
In addition, visible light with respect to other colors, because amorphous silicon material has preferable absorptivity (having best absorptivity for green glow) for green glow and bluish-green mixed light, therefore can wait by kind, the proportion of composing of adjusting infrared light conversion layer 124 middle rare earth elements the infrared light in the sunlight 126 is converted to green glow or bluish-green mixed light, increasing the absorptivity of amorphous silicon intrinsic layer 108 and amorphous silicon intrinsic layer 114 further, and then promote the photoelectric conversion efficiency of solar cell 10.
Special one what carry is that through after the solar cell 10, unabsorbed part can also be utilized further through green glow that infrared light conversion layer 124 is converted to or bluish-green mixed light.For instance, form through infrared light conversion layer 124 conversion and unabsorbed green glow or bluish-green mixed light can mix with the unabsorbed visible light that originally passes solar cell 10 and produce the light of different colours.Therefore, if solar cell 10 is applied in the architectural design, then can looks actual demand and adjust and present the light that is different from white light.In addition, as if the agricultural or the industry of flowers and plants that solar cell 10 need to be applied to more green glow or bluish-green mixed light, then can help crops and flowers to cultivate.
Moreover, in the present embodiment, owing to the infrared light in the sunlight 126 that exposes to solar cell 10 has been converted into visible light, the heat history effect that is produced when therefore infrared light exposes to solar cell can be reduced significantly, makes solar cell 10 still can maintain the temperature identical with context after sunlight 126 irradiations.In addition,, therefore can further avoid causing the problem of photoelectric conversion efficiency reduction, and then reach the purpose of the usefulness that promotes solar cell because of the heat history effect because the heat history effect is reduced significantly.
See also shown in Figure 2ly, be the cross-sectional schematic of the three stratotype solar cells that infrared light are converted to visible light of another embodiment of the utility model.As shown in Figure 2, in another embodiment of the utility model, can also between electrode 102 and p type semiconductor layer 122, dispose semi-transparent metal layer 128.The material of semi-transparent metal layer 128 for example is aluminium or transition metal.In the present embodiment, when sunlight 126 exposed to solar cell 20, unabsorbed green glow or bluish-green mixed light and other unabsorbed visible lights can pass solar cell 20 through semi-transparent metal layer 128.At this moment, can control the color and the amount of light of the light that passes solar cell 20 by the thickness of adjusting semi-transparent metal layer 128.
In detail, if the thinner thickness of semi-transparent metal layer 128, the light intensity that then passes solar cell 20 is bigger, and contains more green glow or bluish-green mixed light, therefore need can be applied to the agricultural or the industry of flowers and plants of more green glow or bluish-green mixed light equally, cultivate to help crops and flowers; If the thickness of semi-transparent metal layer 128 is thicker, the light intensity that then passes solar cell 20 is less, and contains less green glow or bluish-green mixed light.
In addition, the visible light of part also can be reflected by semi-transparent metal layer 128 and enter amorphous silicon intrinsic layer 108, amorphous silicon intrinsic layer 114 and microcrystal silicon intrinsic layer 120 once more, and is absorbed with microcrystal silicon intrinsic layer 120 by amorphous silicon intrinsic layer 108, amorphous silicon intrinsic layer 114.
Though the utility model discloses as above with preferred embodiment, so be not in order to limit the scope that the utility model is implemented, the simple equivalent of doing according to claims of the present utility model and description changes and modification, still belongs in the scope of technical solutions of the utility model.
Claims (10)
1. one kind is converted to three stratotype solar cells of visible light with infrared light, it is characterized in that comprising:
One transparency carrier;
One first electrode is disposed on this transparency carrier;
One second electrode is disposed between this first electrode and this transparency carrier;
One the one n type semiconductor layer, one first amorphous silicon intrinsic layer, one the one p type semiconductor layer, one the 2nd n type semiconductor layer, one second amorphous silicon intrinsic layer, one the 2nd p type semiconductor layer, one the 3rd n type semiconductor layer, a microcrystal silicon intrinsic layer and one the 3rd p type semiconductor layer, be disposed in regular turn between this first electrode and this second electrode, and a n type semiconductor layer is between this first amorphous silicon intrinsic layer and this second electrode; And
One infrared light conversion layer is disposed between a n type semiconductor layer and this second electrode, in order to infrared light is converted to a visible light.
2. as claimed in claim 1 infrared light is converted to three stratotype solar cells of visible light, the material that it is characterized in that wherein said infrared light conversion layer is a rare earth element.
3. as claimed in claim 2 infrared light is converted to three stratotype solar cells of visible light, it is characterized in that wherein said rare earth element is a lanthanide series.
4. as claimed in claim 1 infrared light is converted to three stratotype solar cells of visible light, it is characterized in that wherein said visible light is green glow or bluish-green mixed light.
5. as claimed in claim 1 infrared light is converted to three stratotype solar cells of visible light, the material that it is characterized in that wherein said first electrode and this second electrode is a transparent conductive oxide.
6. as claimed in claim 1 infrared light is converted to three stratotype solar cells of visible light, it is characterized in that the material of a wherein said n type semiconductor layer, the 2nd n type semiconductor layer and the 3rd n type semiconductor layer is amorphous silicon or microcrystal silicon.
7. as claimed in claim 1 infrared light is converted to three stratotype solar cells of visible light, it is characterized in that the material of a wherein said p type semiconductor layer, the 2nd p type semiconductor layer and the 3rd p type semiconductor layer is amorphous silicon or microcrystal silicon.
8. as claimed in claim 1 infrared light is converted to three stratotype solar cells of visible light, the material that it is characterized in that wherein said transparency carrier is a glass.
9. as claimed in claim 1 infrared light is converted to three stratotype solar cells of visible light, it is characterized in that also comprising a semi-transparent metal layer, be disposed between this first electrode and the 3rd p type semiconductor layer.
10. as claimed in claim 9 infrared light is converted to three stratotype solar cells of visible light, the material that it is characterized in that wherein said semi-transparent metal layer is aluminium or transition metal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010206294788U CN201904364U (en) | 2010-11-24 | 2010-11-24 | Three-layer solar cell capable of converting infrared light into visible light |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010206294788U CN201904364U (en) | 2010-11-24 | 2010-11-24 | Three-layer solar cell capable of converting infrared light into visible light |
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| Publication Number | Publication Date |
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| CN201904364U true CN201904364U (en) | 2011-07-20 |
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| CN2010206294788U Expired - Fee Related CN201904364U (en) | 2010-11-24 | 2010-11-24 | Three-layer solar cell capable of converting infrared light into visible light |
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| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110720 Termination date: 20141124 |
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| EXPY | Termination of patent right or utility model |