CN102479862A - Method for intelligently regulating and controlling penetration light and photoelectric conversion efficiency of solar battery - Google Patents

Method for intelligently regulating and controlling penetration light and photoelectric conversion efficiency of solar battery Download PDF

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Publication number
CN102479862A
CN102479862A CN2010105628108A CN201010562810A CN102479862A CN 102479862 A CN102479862 A CN 102479862A CN 2010105628108 A CN2010105628108 A CN 2010105628108A CN 201010562810 A CN201010562810 A CN 201010562810A CN 102479862 A CN102479862 A CN 102479862A
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China
Prior art keywords
solar cell
light
photoelectric conversion
conversion efficiency
semi
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CN2010105628108A
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Chinese (zh)
Inventor
张一熙
刘吉人
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吉富新能源科技(上海)有限公司
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Priority to CN2010105628108A priority Critical patent/CN102479862A/en
Publication of CN102479862A publication Critical patent/CN102479862A/en

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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/52PV systems with concentrators
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product
    • Y02P70/52Manufacturing of products or systems for producing renewable energy
    • Y02P70/521Photovoltaic generators

Abstract

The invention relates to a method for intelligently regulating and controlling the penetration light and the photoelectric conversion efficiency of a solar battery. The method comprises the following steps that: firstly, a transparent base plate, a first electrode, a second electrode, a first conduction type semiconductor layer, a second conduction type semiconductor layer, an intrinsic layer, an infrared ray conversion layer and a semi-transparent metal layer are provided; and then, the thickness of the semi-transparent metal layer is regulated for controlling the penetration light and the photoelectric conversion efficiency of the solar battery. The method has the advantage that the photoelectric conversion efficiency of the solar battery can be improved.

Description

The photoelectric conversion efficiency of intelligent control solar cell and the method that penetrates light

Technical field

The method of the regulation and control solar cell that the present invention relates to, particularly relate to a kind of intelligent control solar cell photoelectric conversion efficiency (photoelectric conversion efficiency, PCE) with penetrate the method for light.Method.

Background technology

Solar energy is a kind of clean pollution-free and inexhaustible energy, when solution pollution that present fossil energy faced and problem of shortage, is the focus that attracts most attention always.Because solar cell can be an electric energy with solar energy converting directly, therefore become present considerable research topic.

Silica-based solar cell is the common a kind of solar cell of industry.The principle of silica-based solar cell is that first conductive-type semiconductor is engaged with second conductive-type semiconductor, connects face to form p-n.When solar irradiation was mapped to the semiconductor with this p-n junction structure, the energy that photon provided can come out the electron excitation in the semiconductor and to produce electronics-electric hole right.Electronics and electric hole all can receive the influence of built in potential, make the direction of the past electric field in electric hole move, and electronics then moves toward opposite direction.If this solar cell and load (load) are coupled together with lead, then can form a loop (loop), and can make electric current flow through load, this is the principle of solar cell power generation.

Along with environmental consciousness comes back, the notion of carbon reduction is paid attention to by everybody gradually, and the development and utilization of the renewable energy resources becomes the emphasis that development is actively dropped in countries in the world.At present, the key issue of solar cell is the lifting of its photoelectric conversion efficiency, and the photoelectric conversion efficiency that can promote solar cell promptly means the lifting of product competitiveness.

Summary of the invention

The objective of the invention is to, a kind of photoelectric conversion efficiency and the method that penetrates light of intelligent control solar cell is provided, make it control the photoelectric conversion efficiency of solar cell and to penetrate light by the thickness of the semi-transparent metal layer in the adjustment solar cell.

A kind of photoelectric conversion efficiency and the method that penetrates light of intelligent control solar cell are proposed according to the present invention to achieve these goals.The method is to provide earlier to comprise transparency carrier, first electrode, second electrode, first conductive-type semiconductor layer, second conductive-type semiconductor layer, intrinsic layer (intrinsic layer), infrared light conversion layer (infrared light conversion laycr) and translucent (translucent) metal level; First electrode is disposed on the transparency carrier; Second electrode is disposed between first electrode and the transparency carrier; First conductive-type semiconductor layer is disposed between first electrode and second electrode; Second conductive-type semiconductor layer is disposed between first conductive-type semiconductor layer and first electrode; Intrinsic layer is disposed between first conductive-type semiconductor layer and second conductive-type semiconductor layer; The infrared light conversion layer is disposed between second conductive-type semiconductor layer and first electrode, in order to convert infrared light into visible light.Semi-transparent metal layer is disposed between the infrared light conversion layer and first electrode.Afterwards, the thickness of adjustment semi-transparent metal layer, with the photoelectric conversion efficiency of control solar cell with penetrate light.

The present invention also can adopt following technical measures further to realize.

The photoelectric conversion efficiency of aforesaid intelligent control solar cell and the method that penetrates light, the material of wherein said infrared light conversion layer for example is rare earth (rare earth) element.

The photoelectric conversion efficiency of aforesaid intelligent control solar cell and the method that penetrates light, wherein said rare earth element for example is lanthanum (La) series elements.

The photoelectric conversion efficiency of aforesaid intelligent control solar cell and the method that penetrates light, wherein said visible light for example is green glow or bluish-green mixed light.

The photoelectric conversion efficiency of aforesaid intelligent control solar cell and the method that penetrates light, the thickness of wherein said semi-transparent metal layer is for example between between the 2nm to 25nm.

The photoelectric conversion efficiency of aforesaid intelligent control solar cell and the method that penetrates light, the material of wherein said semi-transparent metal layer for example is aluminium or transition metal (transition metal).

The photoelectric conversion efficiency of aforesaid intelligent control solar cell and the method that penetrates light, the thickness of wherein said adjustment semi-transparent metal layer for example are the thickness that increases semi-transparent metal layer, penetrate light to increase photoelectric conversion efficiency and minimizing.

The photoelectric conversion efficiency of aforesaid intelligent control solar cell and the method that penetrates light, the thickness of wherein said adjustment semi-transparent metal layer for example is the thickness that reduces semi-transparent metal layer, penetrates light with increase.

The photoelectric conversion efficiency of aforesaid intelligent control solar cell and the method that penetrates light, the thickness of wherein said adjustment semi-transparent metal layer for example is the thickness that increases or reduce semi-transparent metal layer, penetrates the color of light with control.

In sum, the photoelectric conversion efficiency of intelligent control solar cell of the present invention is to provide earlier to comprise transparency carrier, first electrode, second electrode, first conductive-type semiconductor layer, second conductive-type semiconductor layer, intrinsic layer, infrared light conversion layer and semi-transparent metal layer with the method that penetrates light; Afterwards, the thickness of adjustment semi-transparent metal layer, with the photoelectric conversion efficiency of control solar cell with penetrate light.

The present invention compared with prior art has tangible advantage and beneficial effect.By technique scheme, the photoelectric conversion efficiency of intelligent control solar cell of the present invention and the method that penetrates light have advantage at least:

One, based on above-mentioned, the present invention can increase and change the amount that formed visible light reflexes to intrinsic layer by the infrared light conversion layer by the thickness that increases semi-transparent metal layer, and with the photoelectric conversion efficiency of raising solar cell, and minimizing penetrates light.

Two, in addition, the present invention can reduce and change the volume reflection of formed visible light at inside solar energy battery by the infrared light conversion layer by the thickness that reduces semi-transparent metal layer, penetrates the amount of light with increase.

Three, in addition, the present invention can control by the infrared light conversion layer by the thickness that increases or reduce semi-transparent metal layer and change the amount that formed green glow or bluish-green mixed light penetrate solar cell, penetrates the color of light with control.

For letting the above-mentioned feature and advantage of the present invention can be more obviously understandable, hereinafter is special lifts embodiment, and cooperates appended graphic elaborating as follows.

Description of drawings

Fig. 1 is the photoelectric conversion efficiency of intelligent control solar cell of the present invention and the flow chart of steps of the preferred embodiment of the method that penetrates light.

Fig. 2 is the cross-sectional schematic of the solar cell of the embodiment of the invention.

100~102: step 20: solar cell

200: transparency carrier 202,204: electrode

208: the second conductive-type semiconductor layers of 206: the first conductive-type semiconductor layers

210: intrinsic layer 212: the infrared light conversion layer

214: semi-transparent metal layer 216: sunlight

Embodiment

Reach technological means and the effect that predetermined goal of the invention is taked for further setting forth the present invention; Below in conjunction with accompanying drawing and preferred embodiment, the photoelectric conversion efficiency of the intelligent control solar cell that proposes according to the present invention is specified with its embodiment of method that penetrates light, step, structure, characteristic and effect thereof.

Fig. 1 is the photoelectric conversion efficiency of intelligent control solar cell of the present invention and the flow chart of steps of the preferred embodiment of the method that penetrates light.It is the cross-sectional schematic of the solar cell of the embodiment of the invention.Please be simultaneously with reference to Fig. 1 and shown in Figure 2; The photoelectric conversion efficiency of the intelligent control solar cell of preferred embodiment of the present invention and the method that penetrates light: at first; In step 100; Solar cell 20 is provided, and solar cell 20 comprises transparency carrier 200, electrode 202, electrode 204, first conductive-type semiconductor layer 206, second conductive-type semiconductor layer 208, intrinsic layer 210, infrared light conversion layer 212 and semi-transparent metal layer 214; Afterwards, in step 102, the thickness of adjustment semi-transparent metal layer 214

The material of this transparency carrier 200 for example is a glass.Electrode 202 is disposed on the transparency carrier 200.The material of electrode 202 for example is a transparent conductive oxide.Above-mentioned transparent conductive oxide can be indium tin oxide (indium tin oxide, ITO), aluminum zinc oxide (Al doped ZnO, AZO), indium-zinc oxide (indium zinc oxide, IZO) or other transparent conductive materials.Electrode 204 is disposed between electrode 202 and the transparency carrier 200.The material of electrode 204 for example is transparent conductive oxide (for example indium tin oxide, aluminum zinc oxide, indium-zinc oxide or other transparent conductive material).

This first conductive-type semiconductor layer 206 is disposed between electrode 202 and the electrode 204.The material of first conductive-type semiconductor layer 206 for example is amorphous silicon or microcrystal silicon.Second conductive-type semiconductor layer 208 is disposed between first conductive-type semiconductor layer 206 and the electrode 202.The material of second conductive-type semiconductor layer 208 for example is amorphous silicon or microcrystal silicon.Intrinsic layer 210 is disposed between first conductive-type semiconductor layer 206 and second conductive-type semiconductor layer 208, in order to produce electronics-right main region in electric hole as light.The material of intrinsic layer 210 for example is an amorphous silicon.In one embodiment; First conductive-type semiconductor layer 206 for example is the p type semiconductor layer; And the material that is mixed in first conductive-type semiconductor layer 206 for example is the group that is selected from IIIA family element in the periodic table of elements, and it can be boron (B), aluminium (Al), gallium (Ga), indium (In) or thallium (Tl); Second conductive-type semiconductor layer 208 is the n type semiconductor layer for example, and the material that is mixed in second conductive-type semiconductor layer 208 for example is the group that is selected from VA family element in the periodic table of elements, and it can be phosphorus (P), arsenic (As), antimony (Sb) or bismuth (Bi).Certainly, in another embodiment, first conductive-type semiconductor layer 206 also can be the n type semiconductor layer, and second conductive-type semiconductor layer 208 then is the p type semiconductor layer.

This infrared light conversion layer 212 is disposed between second conductive-type semiconductor layer 208 and the electrode 202, in order to convert infrared light into visible light.The material of infrared light conversion layer 212 for example is rare earth element, for example lanthanide series.At length say; For general solar cell; When solar irradiation is incident upon solar cell; Because the intrinsic layer that with the amorphous silicon is material can't absorb the infrared light (it accounts for 50% in sunlight) in the sunlight, so infrared light can directly pass solar cell and can't be utilized, and makes the photoelectric conversion efficiency of solar cell to promote significantly.Yet; In the present embodiment; When sunlight 216 passed transparency carrier 200 and exposes to infrared light conversion layer 212, infrared light conversion layer 212 can be by the visible light that solar cell utilized with being converted into by the infrared light that solar cell utilized in the sunlight 216.

In addition, semi-transparent metal layer 214 is disposed between infrared light conversion layer 212 and the electrode 202.The material of semi-transparent metal layer 214 for example is aluminium or transition metal.The thickness of semi-transparent metal layer 214 is for example between between the 2nm to 25nm.When can't be converted into by infrared light conversion layer 212 by the infrared light that solar cell utilized in the sunlight 216 can be by the visible light that solar cell utilized after, can get into intrinsic layer 210 via the reflection of semi-transparent metal layer 214.Because intrinsic layer 210 has preferable absorptivity for visible light; Therefore converted into visible light by infrared light conversion layer 212 and during when the infrared light in the sunlight 216 by semi-transparent metal layer 214 reflection entering intrinsic layers 210; Compare with general solar cell; Can increase the amount of the visible light that exposes to intrinsic layer 210, thereby promote the photoelectric conversion efficiency of solar cell 20.

In addition; Visible light with respect to other colors; Because the intrinsic layer in the solar cell 20 is to be material with the amorphous silicon; And the amorphous silicon material has preferable absorptivity (having best absorptivity for green glow) for green glow and bluish-green mixed light, therefore can wait by kind, the proportion of composing of adjustment infrared light conversion layer 212 middle rare earth elements to convert the infrared light in the sunlight 216 into green glow or bluish-green mixed light, to promote the photoelectric conversion efficiency of solar cell 20 further.

In this article, the thickness of adjustment semi-transparent metal layer 214 is promptly represented to solar cell 20 semi-transparent metal layer 214 with different-thickness to be provided, as long as semi-transparent metal layer 214 is between between the 2nm to 25nm.At length say, can adjust the transparency of semi-transparent metal layer 214 via the thickness of adjustment semi-transparent metal layer 214.When the thickness of semi-transparent metal layer 214 was thin more, then the transparency of semi-transparent metal layer 214 was high more, and it has higher light transmittance; When the thicker of semi-transparent metal layer 214, then the transparency of semi-transparent metal layer 214 is low more, and it has higher light reflectivity.

For instance, the thickness by increasing semi-transparent metal layer 214 can increase the photoelectric conversion efficiency of solar cell 20 and the light that minimizing penetrates solar cell 20.Because the thickness of semi-transparent metal layer 214 increases; Make the light reflectivity of semi-transparent metal layer 214 improve; Therefore after the infrared light in the sunlight 216 is converted into visible light by infrared light conversion layer 212; A large amount of visible lights can be reflexed to intrinsic layer 210 by semi-transparent metal layer 214, thereby has improved the photoelectric conversion efficiency of solar cell 20.

In addition, by the thickness of adjustment semi-transparent metal layer 214, also can control the light that penetrates solar cell 20.For instance, can reduce the light that penetrates solar cell 20 by the thickness that increases semi-transparent metal layer 214, the thickness that reduces semi-transparent metal layer 214 then can increase the light that penetrates solar cell 20.In other words, can reach the effect that control penetrates the light intensity of solar cell 20 by the thickness of adjusting semi-transparent metal layer 214, to meet user's demand.

In addition, penetrate the light intensity of solar cell 20 except reaching control, can also control the light color that penetrates solar cell 20 further by the thickness of adjusting semi-transparent metal layer 214.For instance, after the infrared light in the sunlight 216 is converted into green glow or bluish-green mixed light by infrared light conversion layer 212, can control the amount of penetrating of green glow or bluish-green mixed light by the thickness of adjustment semi-transparent metal layer 214.Therefore, if solar cell 20 is applied in the architectural design, then can look the amount of penetrating that green glow or bluish-green mixed light are controlled in actual demand, to demonstrate the green glow that contains in various degree or the light of bluish-green mixed light.In addition, by the thickness that reduces semi-transparent metal layer 214, then can solar cell 20 need be applied to the agricultural or the industry of flowers and plants of more green glow or bluish-green mixed light, to help the cultivation of crops and flowers.

Though the present invention discloses as above with embodiment; Right its is not in order to limit the present invention, to have common knowledge the knowledgeable in any affiliated technical field, in spirit that does not break away from the present invention and scope; When doing a little change and retouching, still belong in the scope of technical scheme of the present invention.

Claims (9)

  1. The photoelectric conversion efficiency of an intelligent control solar cell with penetrate the method for light, it is characterized in that it may further comprise the steps:
    One solar cell is provided, and this solar cell comprises: a transparency carrier; One first electrode is disposed on this transparency carrier; One second electrode is disposed between this first electrode and this transparency carrier; One first conductive-type semiconductor layer is disposed between this first electrode and this second electrode; One second conductive-type semiconductor layer is disposed between this first conductive-type semiconductor layer and this first electrode; One intrinsic layer is disposed between this first conductive-type semiconductor layer and this second conductive-type semiconductor layer; One infrared light conversion layer is disposed between this second conductive-type semiconductor layer and this first electrode, in order to infrared light is converted into a visible light; And a semi-transparent metal layer, be disposed between this infrared light conversion layer and this first electrode; And
    Adjust the thickness of this semi-transparent metal layer, penetrate light with a photoelectric conversion efficiency and of controlling this solar cell.
  2. 2. the photoelectric conversion efficiency of intelligent control solar cell according to claim 1 and the method that penetrates light is characterized in that the material of wherein said infrared light conversion layer comprises a rare earth element.
  3. 3. the photoelectric conversion efficiency of intelligent control solar cell according to claim 2 and the method that penetrates light is characterized in that wherein said rare earth element comprises lanthanide series.
  4. 4. the photoelectric conversion efficiency of intelligent control solar cell according to claim 1 and the method that penetrates light is characterized in that wherein said visible light comprises green glow or bluish-green mixed light.
  5. 5. the photoelectric conversion efficiency of intelligent control solar cell according to claim 1 and the method that penetrates light, the thickness that it is characterized in that wherein said semi-transparent metal layer is between between the 2nm to 25nm.
  6. 6. the photoelectric conversion efficiency of intelligent control solar cell according to claim 1 and the method that penetrates light is characterized in that the material of wherein said semi-transparent metal layer comprises aluminium or transition metal.
  7. 7. the photoelectric conversion efficiency of intelligent control solar cell according to claim 1 and the method that penetrates light; The thickness that it is characterized in that wherein said this semi-transparent metal layer of adjustment comprises the thickness that increases this semi-transparent metal layer, penetrates light to increase this photoelectric conversion efficiency and to reduce this.
  8. 8. the photoelectric conversion efficiency of intelligent control solar cell according to claim 1 and the method that penetrates light is characterized in that the thickness of wherein said this semi-transparent metal layer of adjustment comprises the thickness that reduces this semi-transparent metal layer, penetrate light to increase this.
  9. 9. the photoelectric conversion efficiency of intelligent control solar cell according to claim 1 and the method that penetrates light; The thickness that it is characterized in that wherein said this semi-transparent metal layer of adjustment comprises the thickness that increases or reduce this semi-transparent metal layer, to control the color that this penetrates light.
CN2010105628108A 2010-11-24 2010-11-24 Method for intelligently regulating and controlling penetration light and photoelectric conversion efficiency of solar battery CN102479862A (en)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100373636C (en) * 2005-11-14 2008-03-05 浙江大学 Method of preparing compound wavelength conversion-antireflecting on silicon solar energy battery surface
CN101369609A (en) * 2008-10-10 2009-02-18 南开大学 Solar battery with upper conversion material and preparation method
CN101794834A (en) * 2009-12-14 2010-08-04 湖南共创光伏科技有限公司 High-efficiency thin-film solar cell provided with up-conversion fluorescent material film and film preparation method thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100373636C (en) * 2005-11-14 2008-03-05 浙江大学 Method of preparing compound wavelength conversion-antireflecting on silicon solar energy battery surface
CN101369609A (en) * 2008-10-10 2009-02-18 南开大学 Solar battery with upper conversion material and preparation method
CN101794834A (en) * 2009-12-14 2010-08-04 湖南共创光伏科技有限公司 High-efficiency thin-film solar cell provided with up-conversion fluorescent material film and film preparation method thereof

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Application publication date: 20120530