CN201748928U - Tunnel magnetoresistance effect magnetic encoder - Google Patents
Tunnel magnetoresistance effect magnetic encoder Download PDFInfo
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- CN201748928U CN201748928U CN2010205187238U CN201020518723U CN201748928U CN 201748928 U CN201748928 U CN 201748928U CN 2010205187238 U CN2010205187238 U CN 2010205187238U CN 201020518723 U CN201020518723 U CN 201020518723U CN 201748928 U CN201748928 U CN 201748928U
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
- G01B7/30—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring angles or tapers; for testing the alignment of axes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
- G01D5/12—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means
- G01D5/14—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage
- G01D5/142—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage using Hall-effect devices
- G01D5/145—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage using Hall-effect devices influenced by the relative movement between the Hall device and magnetic fields
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/098—Magnetoresistive devices comprising tunnel junctions, e.g. tunnel magnetoresistance sensors
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Measuring Magnetic Variables (AREA)
- Transmission And Conversion Of Sensor Element Output (AREA)
- Hall/Mr Elements (AREA)
Abstract
The utility model discloses two tunnel magnetoresistance effect magnetic encoders. One of the magnetic encoders comprises a magnetic block, a magnetic sensitive element, two operational amplifiers, a data signal processing chip, and an output display module, wherein the magnetic sensitive element adopts the TMR double-shaft magnetic field chip, which is disposed under the magnetic block. Two operational amplifiers, the data signal processing chip, and the output display module are disposed on a PCB circuit board, which is disposed on the external of the magnetic block and the TMR double-shaft magnetic field chip. The other of the magnetic encoders comprises a magnetic drum, a magnetic grid disposed on the edge of the magnetic drum, a magnetic sensitive element, a signal amplifying shaping module, a counting module, a calculation processing module, and a display module. The magnetic sensitive element adopts the TMR semi bridge chip, which is disposed on the edge of the magnetic drum and has a distance of 1-5mm to the magnetic grid. The signal amplifying shaping module, the counting module, and the calculation processing module are disposed on a PCB circuit board, which is disposed on the external of the magnetic drum and the TMR semi bridge chip. By adopting the TMR chip made of the TMR material, the magnetic sensitive element has advantages of high sensitivity, good temperature stability, high signal to noise ratio, and good anti-noise performance.
Description
Technical field
The utility model relates to the magnetic encoder field.
Background technology
Tunneling magnetoresistance (TMR, Tunnel Magnetoresistance) is a kind of novel magnetoresistance effect of finding recently and beginning commercial Application, it mainly shows in the magnetoresistance effect variation along with the external magnetic field size and Orientation, the resistance generation significant change of magnetoresistance effect, it is than finding that before also AMR (anisotropic-magnetoresistance effect), the GMR (giant magnetoresistance effect) of practical application have bigger resistance change rate.The TMR material has that resistance change rate is big, and the output signal amplitude is big, the resistivity height, and power consumption is little, the advantage that temperature stability is high.Just because of these advantages, TMR has substituted GMR and has been applied in the middle of the reading magnetic head of hard disk recording data.The magnetic-field measurement device made from TMR has than AMR, GMR, hall device that sensitivity is higher, power consumption is lower, linearity is better, dynamic range is wideer, temperature characterisitic is better, the advantage that antijamming capability is stronger.TMR can also be integrated in the middle of the existing chip micro fabrication in addition, is convenient to make the very little integrated magnetic field sensor of volume.
In magnetic encoder, magnetic field and output voltage signal by magnetic sensitive element change perceived, adopt amplification and rectification circuit that voltage signal is amplified output pulse signal after the shaping again, count by signal strobe (standard time clock) pulse signals at last, and then the angle that obtains measuring according to different application, angular velocity, tachometer value etc.The magnetic sensitive element mostly adopts hall device in the usually existing magnetic encoder, AMR, and a small amount of high-end product adopts GMR.But Hall element is because output voltage very little (several approximately mV), thereby needs subsequent conditioning circuit that signal is amplified, and has bigger zero offset voltage usually, and sensitivity is little, poor anti jamming capability, and to the unusual sensitivity of temperature and stress.AMR, GMR belong to magnetoresistive element, but the resistance change rate of general AMR can only be below 5%, and actual commercial Application generally has only 2%～3%, thereby measurement sensitivity is little, and the output signal amplitude is little, needs equally to amplify.And the resistance change rate of GMR element is bigger, can reach about 20%, but in the GMR element because strong exchange lotus root cooperation usefulness, its saturation field is very big, has limited the raising of its sensitivity.There is even symmetry in the resistance change rate of GMR element with the non-monotone variation of the variation characteristic in magnetic field simultaneously, makes its switch performance relatively poor.These all make them in the application of magnetic coder, and the signal to noise ratio (S/N ratio) of output signal is lower, and influence its job stability.
Summary of the invention
The purpose of this utility model is to overcome the deficiencies in the prior art, and the signal to noise ratio (S/N ratio) that can improve the magnetic encoder output signal and the magnetic encoder of job stability are provided.
The technical solution of the utility model is:
A kind of tunneling magnetoresistance magnetic encoder comprises a magnetic patch, a magnetic sensitive element, two operational amplifiers, a digital signal processing chip, and output display module, the magnetic sensitive element adopts TMR twin shaft magnetic field chip, and TMR twin shaft magnetic field chip is positioned at the below of magnetic patch; Two operational amplifiers, digital signal processing chip, output display modules are positioned on the PCB circuit board, and the PCB circuit board is positioned at the outside of magnetic patch and TMR twin shaft magnetic field chip.
TMR twin shaft magnetic field chip is made of two TMR full-bridges, two mutually orthogonal placements of TMR full-bridge.
The pinned magnetic layer magnetic moment direction of two relative TMR elements is identical in the TMR full-bridge, and the direction antiparallel of the pinning layer of the TMR element relative with two other, and the magnetic free layer magnetic moment direction of four TMR elements is parallel.
Another kind of tunneling magnetoresistance magnetic encoder, comprise a magnetic drum, magnetic drum has magnetic grid on the edge, a magnetic sensitive element, and a signal amplifies Shaping Module, a counting module, a computing module, a display module, the magnetic sensitive element adopts TMR half-bridge chip, and TMR half-bridge chip is positioned at the edge of magnetic drum, and and magnetic grid between the distance of 1-5mm at interval; Signal amplification Shaping Module, counting module, computing module are positioned on the PCB circuit board, and the PCB circuit board is positioned at the outside of magnetic drum and TMR half-bridge chip.
The mutual antiparallel of pinned magnetic layer magnetic moment direction of two TMR elements in the TMR half-bridge chip, and the magnetic moment direction of the magnetic free layer of two TMR elements is parallel to each other, and TMR half-bridge chip operation is on off state.
Beneficial effect: tunneling magnetoresistance scrambler described in the utility model since the TMR chip that adopts the TMR material as the magnetic sensitive element, it is highly sensitive, temperature stability is good, the signal to noise ratio (S/N ratio) height, noise robustness is good.TMR is different from photoelectric sensor to magnetic-field-sensitive in addition, itself is noncontact, anti-dust, and rugged surroundings abilities such as greasy dirt are strong.
In addition, second kind of tunneling magnetoresistance scrambler that adopts TMR half-bridge chip as the magnetic sensitive element, TMR half-bridge chip operation itself has very strong antijamming capability on off state, and job stability is higher.From the above scheme, it is big to have a resistance change rate in conjunction with the TMR material, and the output signal amplitude is big, the resistivity height, energy consumption is little, the advantage that temperature stability is high, TMR is applied in the middle of the existing magnetic encoder, as the magnetic sensitive element of magnetic encoder, can effectively improve the signal to noise ratio (S/N ratio) of magnetic encoder, job stability, antijamming capability and combination property, comparing traditional magnetic encoder, to have signal to noise ratio (S/N ratio) higher, and antijamming capability is stronger, sensitivity is higher, the more stable advantage of working.
Description of drawings
Fig. 1 is described scheme one magnetic encoder structure and principle of work synoptic diagram;
Fig. 2 is the TMR twin shaft magnetic field chip synoptic diagram that adopts two TMR full-bridges to constitute;
Fig. 3 is a TMR full bridge structure synoptic diagram;
Fig. 4 is a TMR full-bridge output characteristics synoptic diagram;
Fig. 5 is described scheme two magnetic encoder structures and principle of work synoptic diagram;
Fig. 6 is a TMR half-bridge structure synoptic diagram;
Fig. 7 is a TMR half-bridge output characteristics synoptic diagram.
Embodiment
Below in conjunction with accompanying drawing and embodiment the utility model is described in further detail.
The utility model provides two kinds of magnetic encoder schemes that adopt TMR.
A kind of tunneling magnetoresistance magnetic encoder, comprise a magnetic patch 11, a magnetic sensitive element, two operational amplifiers 17, a digital signal processing chip 18, and output display module 19, the magnetic sensitive element adopts TMR twin shaft magnetic field chip 15, and TMR twin shaft magnetic field chip 15 is positioned at the below of magnetic patch 11; Two operational amplifiers 17, digital signal processing chip 18, output display modules 19 are positioned on the PCB circuit board 16, and PCB circuit board 16 is positioned at the outside of magnetic patch 11 and TMR twin shaft magnetic field chip 15.
Described TMR twin shaft magnetic field chip 15 constitutes two TMR full- bridge 21,22 mutually orthogonal placements by two TMR full-bridges 21,22.Two magnetic-field components that 21,22 while of TMR full-bridge perceive motion magnetic patch produces on both direction X, the Y of quadrature, and be translated into two-way voltage output signal.
The pinned magnetic layer magnetic moment direction of two relative TMR elements is identical in the TMR full- bridge 21,22, and the direction antiparallel of the pinning layer of the TMR element relative with two other, and the magnetic free layer magnetic moment direction of four TMR elements is parallel.
Adopt the magnetic encoder of single TMR twin shaft magnetic field chip, be mainly used in the measurement of angle value, its outstanding feature is the signal to noise ratio (S/N ratio) height, the precision height, and simple structure, cost is low; Principle of work: magnetic patch is along with moving object to be measured is moved together, produce an alternating magnetic fields at chip place, TMR twin shaft magnetic field, the TMR chip by the perception quadrature X, Y direction changes of magnetic field and export the two-way voltage signal, amplify by two operational amplifiers again, be input to dsp chip afterwards and carry out the variation that analog to digital conversion, digital filtering and computing obtain magnetic field intensity and angle, show by display module at last.Owing to carried out analog to digital conversion, thereby output is the angle value and the magnetic field intensity of digital quantity, has promptly realized the coding to the angle of motion magnetic patch.
Described magnetic encoder structure and principle of work synoptic diagram, as shown in Figure 1.The direction of magnetization of magnetic patch 11 is shown in 12.Magnetic patch rotates around its axle 14, and rotation direction can be to clockwise rotate as 13, also can be to rotate counterclockwise.On end face below the magnetic patch, be mounted with a magnetic sensitive element, TMR twin shaft magnetic field sensing chip 15.Comprise two operational amplifiers 17 in addition, DSP digital signal processing chip 18, display module 19, two operational amplifiers 17 wherein, DSP digital signal processing chip 18, display module 19 are positioned on the PCB circuit board 16.The output of TMR twin shaft magnetic field chip 15 is connected with operational amplifier 17 on the PCB circuit board 16 through lead 20.
When magnetic patch 11 rotated, it produced alternating magnetic fields on TMR twin shaft magnetic field chip 15, and it is in the also alternation variation of component of two orthogonal directionss.Wherein the output voltage that causes of the changes of magnetic field of X, Y direction is input to after two operational amplifiers 17 amplify through lead 20, obtains the voltage signal that the analog to digital conversion ADC input with DSP digital signal processing chip 18 is complementary.This voltage carries out analog to digital conversion (ADC) through DSP digital signal processing chip 18, digital filtering, and after the calculation process, the magnetic field amplitude and the angle of the alternate at real-time chip 15 places, output TMR twin shaft magnetic field are shown by display module 19 again.
The formation of TMR twin shaft magnetic field sensing chip 15, as shown in Figure 2.Adopt two orthogonal TMR full- bridge 21,22 orthogonal vertical to place, constitute a TMR twin shaft magnetic field sensing chip 15.Wherein TMR full- bridge 21,22 is measured the Y direction magnetic field H y 23 of quadrature and the magnetic field H x 24 of directions X respectively, and is separately converted to output voltage.
The structure of TMR full- bridge 21,22, as shown in Figure 3.TMR full-bridge 21 is made up of four TMR elements, is respectively upper left element 211, upper right element 212, lower-left element 213, bottom right element 214.Wherein upper left element 211 is identical with the magnetic moment direction 221,224 of the magnetic nailed layer of bottom right element 214, and with upper right element 212, magnetic moment direction 222, the 223 direction antiparallels of the magnetic nailed layer of lower-left element 213.The upper left element 211 of TMR, upper right element 212, lower-left element 213, the magnetic moment direction 231,232,233,234 of the magnetic free layer of bottom right element 214 is parallel to each other.Electrode the 215, the 216th, the voltage input end Vi+ of TMR full-bridge, Vi-; Electrode 217,218th, the voltage output end Vo+ of TMR full-bridge, Vo-.
The full-bridge output characteristics of TMR full-bridge, as shown in Figure 4.Output voltage V=the Vo+-Vo-of TMR full-bridge.
Change along with the change of the direction of external magnetic field 7 and size.When the direction of externally-applied magnetic field 7 for negative (-) and magnetic field intensity during greater than reverse saturation field H1, the output voltage of TMR full-bridge is minimum and saturated.When the direction of externally-applied magnetic field 7 when just (+) and magnetic field intensity are greater than forward saturation field H2, the output voltage of TMR full-bridge is the highest and reach capacity.Magnetic field range between-H1 and the H2 is exactly the measurement range of TMR full-bridge, and between-H1 and H2, output voltage is with externally-applied magnetic field 7 linear change.
Another kind of tunneling magnetoresistance magnetic encoder (being also referred to as the magnetic grid scrambler), comprise a magnetic drum 51, magnetic grid 52 is arranged on the magnetic drum edge, a magnetic sensitive element, and signal amplifies Shaping Module 54, counting module 55, computing module 56, a display module 57, the magnetic sensitive element adopts TMR half-bridge chip 53, and TMR half-bridge chip 53 is positioned at the edge of magnetic drum 51, and and magnetic grid 52 between the distance of 1-5mm at interval; Signal amplification Shaping Module 54, counting module 55, computing module 56 are positioned on the PCB circuit board 58, and PCB circuit board 58 is positioned at the outside of magnetic drum 51 and TMR half-bridge chip 53.
The mutual antiparallel of pinned magnetic layer magnetic moment direction of two the TMR elements 614,615 in the described TMR half-bridge chip 53, and the magnetic moment direction of the magnetic free layer of two TMR elements is parallel to each other, and TMR half-bridge chip operation is on off state.
When real work, magnetic drum 51 is along with object under test moves together, and the magnetic grid 52 on it produces alternating magnetic fields on TMR half-bridge chip 53, and TMR half-bridge chip 53 is operated under the on off state.
Employing is operated in the magnetic grid scrambler of the TMR half-bridge magnetic field chip under the on off state, is mainly used in the measurement of angle, angular velocity, rotating speed etc., and its outstanding feature is a working stability, and anti-abominable working environment ability is good, and antijamming capability is strong.Principle of work: the magnetic drum that is carved with magnetic grid is along with coding object to be measured moves together, the magnetic field that the magnetic grid motion on the magnetic drum changes, the magnetic field that TMR half-bridge chip perception magnetic grid produces, and output voltage signal.Adopt signal to amplify Shaping Module voltage signal is amplified shaping, obtain pulse signal, count by the counting module pulse signals, handle the encoded radio that obtains moving object by the computing module again, encoded radio can be angle, angular velocity, speed, shows by display module at last.
The structure of second kind of tunneling magnetoresistance magnetic encoder and principle of work synoptic diagram, as shown in Figure 5.
When work, magnetic drum 51 is installed in the moving object by mounting rod, with the moving object campaign.During motion, the magnetic grid 52 on the magnetic drum 51 promptly produces on the TMR half-bridge 53 and gives birth to alternating magnetic fields at the magnetic sensitive element, and the voltage signal of output alternation.By lead 59 voltage signal is input to signal and amplifies Shaping Module (54) and amplify shaping and have, obtain pulse signal, count through counting module 55 again.Afterwards count value is input to after computing module 56 carries out computing, shows or directly outputing to other control module controls for the motion that is used for to moving object by display module 57.
TMR half-bridge chip 53, as shown in Figure 6.Form by two TMR elements, be respectively left side element 614, right elements 615.Magnetic moment direction 616, the 617 mutual antiparallels of the magnetic nailed layer of left side element 614, right elements 615 wherein.Left side element 614, the direction 618,619 of the magnetic free layer of right elements 615 is parallel to each other.Electrode 611,612nd, voltage input end Vin+, the Vin-of TMR half-bridge, electrode 613 are voltage output ends of TMR half-bridge, and voltage input end 612 also is the reference edge of TMR half-bridge voltage output simultaneously, and its output voltage is Vout.
The output characteristics synoptic diagram of TMR half-bridge, as shown in Figure 7.The output voltage V out of TMR half-bridge is along with the direction of external magnetic field 7 changes with big or small change.When the direction of externally-applied magnetic field 7 for negative (-) and magnetic field intensity during greater than reverse saturation field H1, TMR half-bridge output low level 321.When the direction of externally-applied magnetic field 7 when just (+) and magnetic field intensity are greater than forward saturation field H2, TMR half-bridge output high level 320, promptly the TMR half-bridge is operated on off state.Magnetic field range between-H1 and the H2 is exactly the measurement range of TMR half-bridge.
Claims (5)
1. tunneling magnetoresistance magnetic encoder, comprise a magnetic patch (11), a magnetic sensitive element, two operational amplifiers (17), a digital signal processing chip (18), and output display module (19), it is characterized in that: described magnetic sensitive element adopts TMR twin shaft magnetic field chip (15), and TMR twin shaft magnetic field chip (15) is positioned at the below of magnetic patch (11); Two operational amplifiers (17), digital signal processing chip (18), output display module (19) are positioned on the PCB circuit board (16), and PCB circuit board (16) is positioned at the outside of magnetic patch (11) and TMR twin shaft magnetic field chip (15).
2. tunneling magnetoresistance magnetic encoder according to claim 1 is characterized in that: described TMR twin shaft magnetic field chip (15) is made of two TMR full-bridges (21,22), the mutually orthogonal placement of two TMR full-bridges (21,22).
3. the described tunneling magnetoresistance magnetic encoder of claim 2, it is characterized in that: the pinned magnetic layer magnetic moment direction of two relative TMR elements is identical in the described TMR full-bridge (21,22), and the direction antiparallel of the pinning layer of the TMR element relative with two other, the magnetic free layer magnetic moment direction of four TMR elements is parallel.
4. tunneling magnetoresistance magnetic encoder, comprise a magnetic drum (51), magnetic grid (52) is arranged on the magnetic drum edge, a magnetic sensitive element, and a signal amplifies Shaping Module (54), a counting module (55), a computing module (56), a display module (57), it is characterized in that: described magnetic sensitive element adopts TMR half-bridge chip (53), and TMR half-bridge chip (53) is positioned at the edge of magnetic drum (51), and and magnetic grid (52) between the distance of 1-5mm at interval; Signal amplification Shaping Module (54), counting module (55), computing module (56) are positioned on the PCB circuit board (58), and PCB circuit board (58) is positioned at the outside of magnetic drum (51) and TMR half-bridge chip (53).
5. tunneling magnetoresistance magnetic encoder according to claim 4, it is characterized in that: the mutual antiparallel of pinned magnetic layer magnetic moment direction of two the TMR elements (614,615) in the described TMR half-bridge chip (53), and the magnetic moment direction of the magnetic free layer of two TMR elements is parallel to each other, and TMR half-bridge chip (53) is operated on off state.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010205187238U CN201748928U (en) | 2010-09-07 | 2010-09-07 | Tunnel magnetoresistance effect magnetic encoder |
| PCT/CN2011/079432 WO2012031553A1 (en) | 2010-09-07 | 2011-09-07 | Magnetic encoder with tunnel magnetoresistance effect |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010205187238U CN201748928U (en) | 2010-09-07 | 2010-09-07 | Tunnel magnetoresistance effect magnetic encoder |
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| CN201748928U true CN201748928U (en) | 2011-02-16 |
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| CN2010205187238U Expired - Lifetime CN201748928U (en) | 2010-09-07 | 2010-09-07 | Tunnel magnetoresistance effect magnetic encoder |
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| WO (1) | WO2012031553A1 (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012031553A1 (en) * | 2010-09-07 | 2012-03-15 | 江苏多维科技有限公司 | Magnetic encoder with tunnel magnetoresistance effect |
| WO2014029369A1 (en) * | 2012-08-24 | 2014-02-27 | 江苏多维科技有限公司 | Direct-reading type metering device and direct-reading type water meter |
| WO2014108075A1 (en) * | 2013-01-09 | 2014-07-17 | 江苏多维科技有限公司 | Magnetic angle encoder and electronic water meter |
| WO2014108096A1 (en) * | 2013-01-11 | 2014-07-17 | 江苏多维科技有限公司 | Multi-turn absolute magnetic encoder |
| CN105627907A (en) * | 2014-10-31 | 2016-06-01 | 北京精密机电控制设备研究所 | Real-time high-temperature linear compensation two-redundancy high-precision angle displacement sensor |
| CN108759644A (en) * | 2018-05-21 | 2018-11-06 | 江苏美的清洁电器股份有限公司 | Detection method, device and the storage medium of displacement distance |
| CN109001818A (en) * | 2018-05-07 | 2018-12-14 | 哈尔滨工程大学 | Tunnel magneto resistance ocean gradient magnetic instrument |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112698253B (en) * | 2020-12-11 | 2023-09-29 | 哈尔滨工程大学 | Digital triaxial TMR magnetic sensing system |
| CN112945074B (en) * | 2021-02-20 | 2022-09-30 | 杭州鲲骏海洋工程技术有限公司 | Full-sea-depth non-contact tunnel magneto-resistance array displacement sensor |
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| CN2335151Y (en) * | 1998-06-09 | 1999-08-25 | 赵宏武 | High-resolution magnetic rotary encoder with high-sensitivity probe |
| CN1245608C (en) * | 2001-11-13 | 2006-03-15 | 北京科大天宇微电子材料技术开发有限公司 | Magnetic encoder with magnetic tunnel junction and magnetosensitive resistance chip |
| CN1234017C (en) * | 2001-11-13 | 2005-12-28 | 北京科大天宇微电子材料技术开发有限公司 | Tester with magnetic tunnel junction and magnetioelectric resistance material for 3D weak magnetic field |
| DE10308030B4 (en) * | 2003-02-24 | 2011-02-03 | Meas Deutschland Gmbh | Magnetoresistive sensor for determining an angle or position |
| FR2876800B1 (en) * | 2004-10-18 | 2007-03-02 | Commissariat Energie Atomique | METHOD AND DEVICE FOR MEASURING A MAGNETIC FIELD USING A MAGNETORESITIVE SENSOR |
| CN100590387C (en) * | 2008-03-05 | 2010-02-17 | 合肥智丰传感集成技术有限公司 | Tunnel junction non-contact type displacement measurement method and displacement sensor |
| CN101629802A (en) * | 2008-07-14 | 2010-01-20 | Tdk株式会社 | Angle detecting apparatus and angle detecting method |
| CN101788596A (en) * | 2010-01-29 | 2010-07-28 | 王建国 | Tunnel junction magneto-resistance effect principle (TMR) current sensors |
| CN101813479B (en) * | 2010-04-01 | 2012-10-10 | 王建国 | TMR (Triple Modular Redundancy) electronic compass |
| CN201748928U (en) * | 2010-09-07 | 2011-02-16 | 王建国 | Tunnel magnetoresistance effect magnetic encoder |
-
2010
- 2010-09-07 CN CN2010205187238U patent/CN201748928U/en not_active Expired - Lifetime
-
2011
- 2011-09-07 WO PCT/CN2011/079432 patent/WO2012031553A1/en active Application Filing
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012031553A1 (en) * | 2010-09-07 | 2012-03-15 | 江苏多维科技有限公司 | Magnetic encoder with tunnel magnetoresistance effect |
| WO2014029369A1 (en) * | 2012-08-24 | 2014-02-27 | 江苏多维科技有限公司 | Direct-reading type metering device and direct-reading type water meter |
| US9880023B2 (en) | 2012-08-24 | 2018-01-30 | MultiDimension Technology Co., Ltd. | Direct read metering device and direct read water meter |
| WO2014108075A1 (en) * | 2013-01-09 | 2014-07-17 | 江苏多维科技有限公司 | Magnetic angle encoder and electronic water meter |
| US9638561B2 (en) | 2013-01-09 | 2017-05-02 | MultiDimension Technology Co., Ltd. | Magnetic angle encoder and electronic water meter |
| WO2014108096A1 (en) * | 2013-01-11 | 2014-07-17 | 江苏多维科技有限公司 | Multi-turn absolute magnetic encoder |
| US9389099B2 (en) | 2013-01-11 | 2016-07-12 | MultiDimension Technology Co., Ltd. | Multi-turn absolute magnetic encoder |
| CN105627907A (en) * | 2014-10-31 | 2016-06-01 | 北京精密机电控制设备研究所 | Real-time high-temperature linear compensation two-redundancy high-precision angle displacement sensor |
| CN105627907B (en) * | 2014-10-31 | 2018-11-02 | 北京精密机电控制设备研究所 | A kind of two redundancy high-precision angular displacement sensor of real time high temperature linear compensation |
| CN109001818A (en) * | 2018-05-07 | 2018-12-14 | 哈尔滨工程大学 | Tunnel magneto resistance ocean gradient magnetic instrument |
| CN108759644A (en) * | 2018-05-21 | 2018-11-06 | 江苏美的清洁电器股份有限公司 | Detection method, device and the storage medium of displacement distance |
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| Publication number | Publication date |
|---|---|
| WO2012031553A1 (en) | 2012-03-15 |
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Assignee: Jiangsu Duowei Technology Co., Ltd. Assignor: Wang Jianguo|Xue Songsheng Contract record no.: 2011990000354 Denomination of utility model: Tunnel magnetoresistance effect magnetic encoder Granted publication date: 20110216 License type: Exclusive License Record date: 20110509 |
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