CN103698721A - Hall sensing unit of CMOS (complementary metal oxide semiconductor) on-chip three-dimensional miniature magnetic detection sensor - Google Patents
Hall sensing unit of CMOS (complementary metal oxide semiconductor) on-chip three-dimensional miniature magnetic detection sensor Download PDFInfo
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- CN103698721A CN103698721A CN201310738425.8A CN201310738425A CN103698721A CN 103698721 A CN103698721 A CN 103698721A CN 201310738425 A CN201310738425 A CN 201310738425A CN 103698721 A CN103698721 A CN 103698721A
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Abstract
The invention relates to a Hall sensing unit of a CMOS (complementary metal oxide semiconductor) on-chip three-dimensional miniature magnetic detection sensor. The Hall sensing unit is characterized by comprising at least one horizontal Hall device for detecting the magnetic induction component in the Z direction and a plurality of vertical Hall devices for detecting the magnetic induction components in X and Y directions, wherein the horizontal Hall device and the vertical Hall devices are arranged on a CMOS chip in a distribution combination way. The Hall sensing unit has the beneficial effects that the precise measurement on the size and the direction of the magnetic flux density B vector of a certain point on the chip within 100mum*100mum at low cost can be realized, a signal modulation circuit can also be connected with the sensing unit in a nearest way, the Hall sensing unit is very favorable for reducing the noise and improving the sensitivity, and meanwhile, a digital signal processing part can be integrated in the same chip.
Description
Technical field
The present invention relates to three-dimensional micro magnetic measurement sensor, relate in particular to the hall sensor unit of three-dimensional micro magnetic measurement sensor on a kind of CMOS sheet.
Background technology
Complete single-chip Three-Dimensional Magnetic sensor mainly comprises three-dimensional Hall magnetic sensing unit, three parts of signal condition unit and digital signal processing unit.Three-Dimensional Magnetic sensing unit foremost, utilizes the principle of Hall effect that the three-dimensional component of external magnetic field is converted to three corresponding dimension Hall voltage signals.Because the hall signal that cmos Hall element produces is very faint, generally in hundreds of μ V to tens mV left and right, and be subject to the fluctuation of production technology, exist in senser element mix material and be Gaussian distribution and work time thermograde and the impact of the stress that produces during chip package, cause cmos Hall element to produce more serious offset voltage and low-frequency noise.For faint Hall voltage signal, these non-ideal factors arrive even greatly and surpass the Hall voltage signal that needs detection.
The size and Orientation of dynamically accurately measuring in real time certain some magnetic density B vector is a difficult problem always, addresses this problem and will greatly improve measuring accuracy and the range of application of Magnetic Sensor.The difficulty that realizes the size and Orientation of dynamically accurately measuring in real time certain some magnetic density B vector be following some: (1) nonopiate error problem, this need to almost concentrate on the magnetic sensor device of a plurality of dimensions a bit.(2) imbalance of sensor, noise, sensitivity and signal aliasing problem.(3) real-time high-precision conversion problem between the desired value of the measured value that sensor obtains and needs.
Summary of the invention
The object of the invention is to overcome the deficiency of above prior art, and the hall sensor unit of three-dimensional micro magnetic measurement sensor on a kind of CMOS sheet is provided, and specifically has following technical scheme to realize:
The hall sensor unit of three-dimensional micro magnetic measurement sensor on described CMOS sheet, comprise at least one horizontal hall device for detection of Z direction magnetic induction component and several vertical Hall devices for detection of X and Y-direction magnetic induction component, described horizontal hall device and vertical Hall device are located on CMOS sheet by the mode of distributed combination.
On described CMOS sheet, the further design of the hall sensor unit of three-dimensional micro magnetic measurement sensor is, described horizontal hall device is one, and vertical Hall device is four.
On described CMOS sheet, the further design of the hall sensor unit of three-dimensional micro magnetic measurement sensor is; described horizontal hall device comprises horizontal Hall disc, protection ring, P substrate and the horizontal electrode that is positive cruciform shape; described horizontal Hall disc is located on P substrate; described protection ring is along horizontal Hall disc marginal distribution, and described horizontal electrode is distributed on horizontal Hall disc.
On described CMOS sheet, the further design of the hall sensor unit of three-dimensional micro magnetic measurement sensor is, described horizontal Hall disc is located at size for the center of the P substrate of 50um*50um, for low dynamics, low N mixes, the longest and the widest portion of described positive cross fork-shaped disk body is divided into 40um, and about disk body and upper and lower shoulder are apart from P edges of substrate indentation 10um.
On described CMOS sheet, the further design of the hall sensor unit of three-dimensional micro magnetic measurement sensor is, described protection ring comprises P+ protection ring and active protection ring, described P+ protection ring is arranged along the positive crosswise at horizontal Hall disc edge, width is 1um, for form the protection of twice backward dioded between Hall disc and P substrate; Described active protection ring is arranged along P edges of substrate, and width is 3 um.
On described CMOS sheet, the further design of the hall sensor unit of three-dimensional micro magnetic measurement sensor is, described horizontal electrode is four polysilicon Hall electrodes, the left and right and the upper and lower shoulder that are arranged at respectively the horizontal hall device of positive cross fork-shaped, be of a size of 8um*1um.
On described CMOS sheet, the further design of the hall sensor unit of three-dimensional micro magnetic measurement sensor is; described four vertical Hall devices are arranged on CMOS sheet accordingly with four shoulders of described horizontal hall device respectively; each vertical Hall device comprises vertical Hall dish, protection ring, P substrate and vertical electrode; described vertical Hall dish is located on P substrate by two strip parallel-connection structures; described protection ring is along the edge setting of vertical Hall dish, and described electrode is distributed on vertical Hall dish.
On described CMOS sheet, the further design of the hall sensor unit of three-dimensional micro magnetic measurement sensor is, the height of two 40um*8um mixes the center that vertical Hall dish that the low N of the degree of depth mixes concentration is arranged at 50um*25umP type substrate.
On described CMOS sheet, the further design of the hall sensor unit of three-dimensional micro magnetic measurement sensor is, described protection ring comprises P+ protection ring and active protection ring, and described active protection ring is arranged along P type edges of substrate, and width is 1 um; Described P+ protection ring is 0.5 um along each vertical Hall dish dispersion of distribution.
On described CMOS sheet, the further design of the hall sensor unit of three-dimensional micro magnetic measurement sensor is, described vertical electrode is eight polysilicon Hall electrodes, and each vertical Hall dish is evenly equipped with four polysilicon Hall electrodes.
Advantage of the present invention is as follows:
Hall sensor unit based on three-dimensional Hall magnetic sensor on CMOS sheet of the present invention can realize with low cost the size and Orientation of accurately measuring certain some magnetic density B vector on interior chip at 100um*100um; Signal conditioning circuit can also be connected in nearest mode with sensing unit, extremely beneficial with raising sensitivity to reducing noise; Signal process part can be integrated in same chip simultaneously.
Accompanying drawing explanation
The three-dimensional hall device structural drawing of Fig. 1 distributed combination formula.
The horizontal hall device structural drawing of Fig. 2 CMOS.
Fig. 3 CMOS vertical Hall device architecture figure.
Embodiment
Below in conjunction with accompanying drawing, the present invention program is elaborated.
The hall sensor unit of three-dimensional micro magnetic measurement sensor on the CMOS sheet that the present embodiment provides, comprise a horizontal hall device for detection of Z direction magnetic induction component and four vertical Hall devices for detection of X and Y-direction magnetic induction component, horizontal hall device and vertical Hall device are located on CMOS sheet by the mode of distributed combination.
Horizontal hall device comprises horizontal Hall disc, protection ring, P substrate and the horizontal electrode that is positive cruciform shape.
Horizontal Hall disc is located at the center that size is the P substrate of 50um*50um, and for the low N of low dynamics mixes, the longest and the widest portion of positive cross fork-shaped disk body is divided into 40um, about disk body and upper and lower shoulder apart from P edges of substrate indentation 10um.
Protection ring in horizontal hall device comprises P+ protection ring and active protection ring.P+ protection ring is arranged along the positive crosswise at horizontal Hall disc edge, and width is 1um, for form the protection of twice backward dioded between Hall disc and P substrate; Active protection ring is arranged along P edges of substrate, and width is 3 um.
Horizontal electrode is four polysilicon Hall electrodes, is arranged at respectively left and right and the upper and lower shoulder of the horizontal hall device of positive cross fork-shaped, is of a size of 8um*1um.
Four vertical Hall devices are arranged on CMOS sheet accordingly with four shoulders of horizontal hall device respectively.Each vertical Hall device comprises vertical Hall dish, protection ring, P substrate and vertical electrode.Vertical Hall dish is located on P substrate by two strip parallel-connection structures, and protection ring is along the edge setting of vertical Hall dish, and electrode is distributed on vertical Hall dish.
The height of two 40um*8um in each vertical Hall device mixes the center that vertical Hall dish that the low N of the degree of depth mixes concentration is arranged at 50um*25umP type substrate.
Protection ring in vertical Hall device comprises P+ protection ring and active protection ring.Active protection ring is arranged along P type edges of substrate, and width is 1 um.P+ protection ring is 0.5 um along each vertical Hall dish dispersion of distribution.
Vertical electrode is eight polysilicon Hall electrodes, and each vertical Hall dish is evenly equipped with four polysilicon Hall electrodes.
The hall sensor unit of the three-dimensional hall device that the present embodiment provides can be realized the accurate measurement of the approximate size and Orientation with some magnetic density three-dimensional component and magnetic density B vector from Gauss to tesla's scope, and the Magnetic Sensor of integrated three-dimensional hall device can be realized accurate contactless range observation and measurement of angle under the cooperation of auxiliary magnetic field.Three-dimensional Hall element is realized the sensing unit of level and a plurality of vertical direction conventionally on the small semiconductor material of same, and the three-dimensional Hall magnetic sensor of miniature CMOS single-chip is significant to high precision, microminiaturization, intellectuality, low-cost future development to Magnetic Sensor.
Claims (10)
1. the hall sensor unit of three-dimensional micro magnetic measurement sensor on a CMOS sheet, it is characterized in that comprising at least one horizontal hall device for detection of Z direction magnetic induction component and several vertical Hall devices for detection of X and Y-direction magnetic induction component, described horizontal hall device and vertical Hall device are located on CMOS sheet by the mode of distributed combination.
2. the hall sensor unit of three-dimensional micro magnetic measurement sensor on CMOS sheet according to claim 1, is characterized in that described horizontal hall device is one, and vertical Hall device is four.
3. the hall sensor unit of three-dimensional micro magnetic measurement sensor on CMOS sheet according to claim 2; it is characterized in that described horizontal hall device comprises horizontal Hall disc, protection ring, P substrate and the horizontal electrode that is positive cruciform shape; described horizontal Hall disc is located on P substrate; described protection ring is along horizontal Hall disc marginal distribution, and described horizontal electrode is distributed on horizontal Hall disc.
4. the hall sensor unit of three-dimensional micro magnetic measurement sensor on CMOS sheet according to claim 3, it is characterized in that described horizontal Hall disc is located at the center that size is the P substrate of 50um*50um, for low dynamics, low N mixes, the longest and the widest portion of described positive cross fork-shaped disk body is divided into 40um, and about disk body and upper and lower shoulder are apart from P edges of substrate indentation 10um.
5. the hall sensor unit of three-dimensional micro magnetic measurement sensor on CMOS sheet according to claim 4, it is characterized in that described protection ring comprises P+ protection ring and active protection ring, described P+ protection ring is arranged along the positive crosswise at horizontal Hall disc edge, width is 1um, for form the protection of twice backward dioded between Hall disc and P substrate; Described active protection ring is arranged along P edges of substrate, and width is 3 um.
6. the hall sensor unit of three-dimensional micro magnetic measurement sensor on CMOS sheet according to claim 5, it is characterized in that described horizontal electrode is four polysilicon Hall electrodes, the left and right and the upper and lower shoulder that are arranged at respectively the horizontal hall device of positive cross fork-shaped, be of a size of 8um*1um.
7. the hall sensor unit of three-dimensional micro magnetic measurement sensor on CMOS sheet according to claim 2; it is characterized in that described four vertical Hall devices are arranged on CMOS sheet accordingly with four shoulders of described horizontal hall device respectively; each vertical Hall device comprises vertical Hall dish, protection ring, P substrate and vertical electrode; described vertical Hall dish is located on P substrate by two strip parallel-connection structures; described protection ring is along the edge setting of vertical Hall dish, and described electrode is distributed on vertical Hall dish.
8. the hall sensor unit of three-dimensional micro magnetic measurement sensor on CMOS sheet according to claim 7, the height that it is characterized in that two 40um*8um mixes the center that vertical Hall dish that the low N of the degree of depth mixes concentration is arranged at 50um*25umP type substrate.
9. the hall sensor unit of three-dimensional micro magnetic measurement sensor on CMOS sheet according to claim 7, is characterized in that described protection ring comprises P+ protection ring and active protection ring, and described active protection ring is arranged along P type edges of substrate, and width is 1 um; Described P+ protection ring is 0.5 um along each vertical Hall dish dispersion of distribution.
10. the hall sensor unit of three-dimensional micro magnetic measurement sensor on CMOS sheet according to claim 7, is characterized in that described vertical electrode is eight polysilicon Hall electrodes, and each vertical Hall dish is evenly equipped with four polysilicon Hall electrodes.
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104502868A (en) * | 2014-12-29 | 2015-04-08 | 南京大学 | High-precision circuit model of cross-shaped Hall sensor |
| CN105261697A (en) * | 2014-07-11 | 2016-01-20 | 塞尼斯公司 | Vertical hall device |
| CN105810815A (en) * | 2015-01-20 | 2016-07-27 | 精工半导体有限公司 | Hall element |
| CN108535669A (en) * | 2018-06-12 | 2018-09-14 | 福州大学 | Hall device and its imbalance removing method applied to three-dimensional Hall sensor |
| CN109270476A (en) * | 2018-11-08 | 2019-01-25 | 福州大学 | A kind of hall device and its method applied to three-dimensional Hall sensor |
| CN113218559A (en) * | 2021-05-28 | 2021-08-06 | 浙江工业大学 | Flexible three-dimensional force sensor and preparation method thereof |
| CN113991011A (en) * | 2021-12-28 | 2022-01-28 | 苏州矩阵光电有限公司 | Hall element with circumferentially distributed electrodes and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108535669A (en) * | 2018-06-12 | 2018-09-14 | 福州大学 | Hall device and its imbalance removing method applied to three-dimensional Hall sensor |
| CN109270476A (en) * | 2018-11-08 | 2019-01-25 | 福州大学 | A kind of hall device and its method applied to three-dimensional Hall sensor |
| CN113218559A (en) * | 2021-05-28 | 2021-08-06 | 浙江工业大学 | Flexible three-dimensional force sensor and preparation method thereof |
| CN113991011A (en) * | 2021-12-28 | 2022-01-28 | 苏州矩阵光电有限公司 | Hall element with circumferentially distributed electrodes and preparation method thereof |
| CN113991011B (en) * | 2021-12-28 | 2022-06-17 | 苏州矩阵光电有限公司 | Hall element with circumferentially distributed electrodes and preparation method thereof |
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Application publication date: 20140402 |