CN112945074B - Full-sea-depth non-contact tunnel magneto-resistance array displacement sensor - Google Patents
Full-sea-depth non-contact tunnel magneto-resistance array displacement sensor Download PDFInfo
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Abstract
A full-sea-depth non-contact tunnel magneto-resistor array displacement sensor comprises a permanent magnetic ferrite arranged at the top of deep sea surveying operation equipment and a tunnel magneto-resistor chip integrated circuit fixed around a motion path of the permanent magnetic ferrite, wherein the magnetic field direction of the permanent magnetic ferrite is parallel to the sensitive axis direction of the tunnel magneto-resistor chip; the integrated circuit of the tunnel magneto-resistance chip comprises an integrated circuit board, wherein an MCU and a plurality of tunnel magneto-resistance chips which are equidistantly arranged on a straight line are integrated on the integrated circuit board, a feedback pin of each tunnel magneto-resistance chip is connected with an IO port of the MCU, and the integrated circuit board is electrically connected with a DC-DC power supply module for supplying power; the tunnel magneto-resistance chip integrated circuit is installed in a sealed cabin, light oil is filled in the sealed cabin, an oil bag for balancing the internal and external pressure of the cabin is arranged on the sealed cabin, and a magnetic shielding layer is arranged outside the sealed cabin.
Description
Technical Field
The invention belongs to the technical field of measuring the displacement of submarine operation equipment, and particularly relates to a full-sea-depth non-contact tunnel magneto-resistance array displacement sensor.
Background
According to the continuous development of deep sea exploration industry in China, devices such as a seabed sampler, a drilling rig and a CPT (continuous programming) are continuously evolved and upgraded, and the geological exploration equipment cannot be monitored by displacement data. The displacement sensors commonly used on the land in the market at present mainly comprise a pull-wire type displacement sensor, a magnetic grid displacement sensor, a grating displacement sensor and a magnetostrictive displacement sensor. The stay wire type displacement sensor cannot be used in a fully-closed working environment due to the fact that a pull wire is needed, and if the stay wire is used in a sea area of ten thousand meters, the stay wire cannot work in a deep sea long distance due to the limitation of the length of the stay wire. The magnetic grid displacement sensor has small measuring range and is easily interfered by severe environments such as external high voltage, strong current and the like. The grating displacement sensor is limited by contact measurement, and is only suitable for static measurement engineering and is not suitable for high-vibration environment. The magnetic field of the magnetostrictive displacement sensor is easily interfered under the condition of high-frequency vibration, and data is easily subjected to errors. It follows that there are a few displacement sensors that can be used for accurate and stable measurements in deep sea.
Disclosure of Invention
According to the requirements of current submarine scientific research, the invention provides a full-sea-depth non-contact tunnel magneto-resistance array displacement sensor which can meet the requirements of deep-sea high-voltage, strong-current and strong-magnetic interference environments in order to overcome the defects of working stability and accuracy of the existing deep-sea surveying displacement sensor, the lack of high-quality submarine displacement sensor products and the like.
The technical scheme adopted by the invention is as follows:
the utility model provides a full sea depth non-contact tunnel magneto resistor array displacement sensor which characterized in that: the magnetic field direction of the permanent magnetic ferrite is parallel to the sensitive axis direction of the tunnel magneto-resistance chip;
the integrated circuit of the tunnel magneto-resistance chip comprises an integrated circuit board, wherein an MCU and a plurality of tunnel magneto-resistance chips which are equidistantly arranged on a straight line are integrated on the integrated circuit board, a feedback pin of each tunnel magneto-resistance chip is connected with an IO port of the MCU, and the integrated circuit board is electrically connected with a DC-DC power supply module for supplying power;
the tunnel magneto-resistance chip integrated circuit is arranged in a sealed cabin, light oil is filled in the sealed cabin, an oil bag for balancing the internal and external pressure of the cabin is arranged on the sealed cabin, and a magnetic shielding layer is arranged outside the sealed cabin;
an expandable communication interface used for extension and networking and a communication watertight plug-in interface used for data transmission are arranged outside the sealed cabin, and the expandable communication interface and the communication watertight plug-in interface are electrically connected with the MCU.
Further, the permanent magnetic ferrite is in a hollow cylinder shape in the middle, the inner diameter of the hollow part is D, the height of the permanent magnetic ferrite is L, and the outer diameter of the permanent magnetic ferrite is D, so that the requirement of the permanent magnetic ferrite on the requirement of the height of the permanent magnetic ferrite on the diameter of the hollow part is met
So that the average magnetic induction of the permanent magnetic ferrite can be approximately regarded as the central magnetic induction, and the magnetic induction of the permanent magnetic ferrite is maximum at the center of the circle and gradually decreases along the two ends of the axis and is distributed symmetrically with the two ends of the axis.
Further, the relationship between the magnetic induction intensity distribution and the distance of the permanent magnetic ferrite satisfies the following equation,
B(x)＝Bo*L 2 *(2x+L) 2 ，
wherein x is the distance from the tunnel magnetoresistance chip to the axis of the permanent magnetic ferrite, L is the height of the permanent magnetic ferrite, and Bo is the magnetic induction intensity at the center of the permanent magnetic ferrite;
when the magnetic induction intensity of the permanent magnetic ferrite and the minimum error needing to be measured are known, the relative placement positions of the permanent magnetic ferrite and the permanent magnetic ferrite chip can be determined. The magnetic sensor can obtain corresponding feedback by sensing the change of a surrounding magnetic field, the working characteristic of the sensor is determined by the distribution of the magnetic field intensity, when the permanent magnetic ferrite is positioned at the midpoint of two tunnel magneto-resistance chips on the array, the magnetic induction intensity of the point is calculated, the intensity is the minimum magnetic induction intensity sensed by the tunnel magneto-resistance chips, and the feedback can be made when the tunnel magneto-resistance chips sense the value which is larger than the minimum sensed magnetic field.
Furthermore, a fixing block for fixing is arranged outside the sealed cabin, the fixing block plays a role of fixing the working position of the sensor, and the vibration of the sensor can be reduced to the greatest extent.
Further, the MCU is provided with two data processing modes, namely a data latch mode and a data input buffer mode. The purpose is to avoid the interference of uncertain factors such as external high vibration to a greater extent.
Further, the data latch type is that the feedback pin of the tunnel magneto-resistance chip is connected with the IO port of the MCU through the pin of the latch, when the tunnel magneto-resistance chip senses a magnetic field in a working range, feedback can be generated inside the chip, the latch captures through pulses, and once the capture is successful, the position state is set 1, which indicates that the coordinate point is reached. A74 HC573 series latch is used in an integrated circuit board, the latch has 8 input and output functions, output ends are connected with Pin13, Pin14, Pin15, Pin18, Pin19, Pin20, Pin21 and Pin22 of an MCU, the IO ports are multiplexed into an ADC function for monitoring, and the MCU obtains data coordinates by accessing data bits of the latch state so as to calculate. The data latch type scheme has the advantages that when the submarine surveying equipment works with high-frequency vibration, instantaneous motion expansion and contraction can occur, the common sensor can have the problems of repeated data drifting and the like, once the data latch acquires the feedback of the TMR chip, the data latch in the invention can set the corresponding internal state position, the data abnormity caused by equipment vibration of external surveying equipment in a short time is effectively avoided, meanwhile, the latch is also suitable for high-speed displacement measurement, and the latch is quite sensitive to data capture and also has good data capture capacity for the working equipment which moves fast.
Further, the data input buffer type creates a data buffer area for the MCU, and receives data sent by the tunnel magnetoresistance chip array in cooperation with the DMA. And when the data is refreshed, the kernel immediately enters DMA (direct memory access) to be interrupted to acquire the data, and then the result is calculated. The input buffer type has extremely high data refreshing capability, can inquire data in the buffer area at a high speed, has the processing speed reaching a microsecond level and far exceeds the vibration frequency of normal common motor equipment, and thus can adapt to normal work in a high-vibration environment.
Further, the data processing of the MCU adopts an abnormal data dynamic compensation and correction mode, which is specifically as follows:
(1) entering a memory through timer interruption, and calculating the speed of a near stage from a certain amount of data and system time reserved in the memory;
(2) comparing the speed of the near stage as a reference value with later data;
(3) when the unit time is not changed, the displacement data has larger error when the error of more than +/-50% occurs in the relative speed, the dynamic compensation correction technology mainly uses an arithmetic mean filtering method, and the arithmetic mean filtering method is according to a plurality of input sampling data x i Finding a relatively stable speed y Optimization of So that y is Optimization of The sum of squares of deviations from the respective sampled data is minimal, i.e.
The data of the near phase is stored in the memory as sampling data, and the near phase y can be calculated Optimization of Pass and exception data y Abnormality (S) And performing weight calculation to obtain correction data. The arithmetic mean filtering algorithm is used in places with random interference data, and the displacement output data is more accurate through the arithmetic mean filtering algorithm。
Furthermore, a plurality of full-sea-depth non-contact tunnel magneto-resistance array displacement sensors are spliced through an array circuit through 485 or CAN communication interfaces, data of different arrays are formed by combining address codes, data bits and data verification, and CRC data verification is added.
Furthermore, the MCU adopts STM32 of an ideological semiconductor, and adopts an RC clock circuit built in a chip as a clock of the chip. When the chip clock circuit is applied to the submarine high-voltage and high-frequency vibration environment, the crystal oscillator circuit cannot work normally for too long time, so that the chip clock circuit is not used, and the RC clock circuit built in the chip is selected as the chip clock. According to the investigation, when the pressure reaches 10000m of the seabed, the pressure is about 1000 times of the normal atmospheric pressure, the chip is manufactured by adopting the STM32 of the semiconductor adopting the intentional method, the process of 130nm is adopted, the critical load born by the monocrystalline silicon is 80MN, and the critical load can meet the normal atmospheric pressure of 800 hundred million times through conversion, so that the mechanical damage to the wafer can not be generated, and the RC circuit can normally operate in deep sea.
The invention has the beneficial effects that: the data output is more accurate, the space cost and the installation cost are low, the high-vibration environment can be adapted to, and the high-voltage, strong-current and strong-magnetic interference environment in deep sea is met.
Drawings
FIG. 1 is a schematic structural diagram of the present invention.
Fig. 2 is a front view of a portion of the structure of the present invention.
Fig. 3 is a side view of a portion of the structure of the present invention.
Fig. 4 is a top view of a portion of the structure of the present invention.
Fig. 5 is a partial structural side view of the present invention.
FIG. 6 is a circuit diagram of the MCU of the present invention.
Fig. 7 is a circuit diagram of a latch of the present invention.
Fig. 8 is a power supply circuit of the present invention fig. 1.
Fig. 9 is a power supply circuit of the present invention fig. 2.
In the figure, 1 is an oil bag, 2 is a magneto-resistor array, 3 is a magnetic shielding cabin cover, 4 is a communication watertight plug-in connector interface, 5 is a fixed block, 6 is an expandable communication interface, 7 is a fixed threaded hole, 8 is a sealing groove, and 9 is a permanent magnetic ferrite.
Detailed Description
The present invention is further illustrated by the following examples, which are not intended to limit the invention to these embodiments. It will be appreciated by those skilled in the art that the present invention encompasses all alternatives, modifications and equivalents as may be included within the scope of the claims.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "clockwise", "counterclockwise", and the like, indicate orientations and positional relationships based on those shown in the drawings, and are used only for convenience of description and simplicity of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, are not to be considered as limiting the present invention. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or to implicitly indicate the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, unless otherwise specified, "a plurality" means two or more unless explicitly defined otherwise.
In the present invention, unless otherwise expressly specified or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In the present invention, unless otherwise expressly stated or limited, "above" or "below" a first feature means that the first and second features are in direct contact, or that the first and second features are not in direct contact but are in contact with each other via another feature therebetween. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply meaning that the first feature is at a lesser elevation than the second feature.
Technical explanation:
the tunneling magneto-resistance technology is also called a TMR technology, which integrates the advantages of high sensitivity of AMR (anisotropic magneto-resistance sensor) and wide dynamic range of GMR (giant magneto-resistance sensor), and has the advantages of miniaturization, low cost, low power consumption, high integration, and high response frequency. The tunnel magneto-resistance chip is a TMR chip.
Referring to fig. 1-9, the embodiment provides a full-sea-depth non-contact tunnel magnetoresistive array displacement sensor, which includes a permanent magnetic ferrite 9 installed on the top of a deep sea survey operation device, and a tunnel magnetoresistive chip integrated circuit fixed around the motion path of the permanent magnetic ferrite, wherein the magnetic field direction of the permanent magnetic ferrite 9 is parallel to the sensitive axis direction of the tunnel magnetoresistive chip;
the integrated circuit of the tunnel magneto-resistance chip comprises an integrated circuit board, wherein an MCU and a plurality of tunnel magneto-resistance chips which are arranged on a straight line at equal intervals are integrated on the integrated circuit board, a feedback pin of the tunnel magneto-resistance chip is connected with an IO port of the MCU, and the integrated circuit board is electrically connected with a DC-DC power module for supplying power;
the tunnel magneto-resistance chip integrated circuit is arranged in a sealed cabin, light oil is filled in the sealed cabin, an oil bag 1 for balancing the internal and external pressure of the cabin is arranged on the sealed cabin, and a magnetic shielding layer is arranged outside the sealed cabin;
an expandable communication interface 6 used for extension and networking and a communication watertight plug-in interface 4 used for data transmission are arranged outside the sealed cabin, and the expandable communication interface 6 and the communication watertight plug-in interface 4 are both electrically connected with the MCU. When the mobile equipment generates displacement, the permanent magnetic ferrite 9 arranged on the mobile equipment meets different TMR chips in the array, voltage feedback exists after the TMR chips sense a magnetic field, the feedback signals are read through an IO end to carry out data judgment, coordinates are obtained, the coordinates are subjected to difference with the initial coordinates to obtain a difference value, and the difference value is multiplied by unit length to obtain the displacement distance.
Specifically, the overall appearance of the magnetic shielding cabin cover is rectangular, except for the front material, the rest three panels represented by the magnetic shielding cabin cover 3 are made of magnetic shielding materials, light oil is filled into the cabin when the magnetic shielding cabin cover is used, screws are screwed after the cabin cover is covered on the cabin cover, the cabin is totally closed, and the sealing groove 8 is arranged between the magnetic shielding cabin cover 3 and the wall surface of the sealing cavity, so that the sealing performance of the magnetic shielding cabin cover 3 after being covered is guaranteed. The oil bag 1 is arranged at the middle lower part of the sensor, so that the pressure consistency inside and outside the cabin is ensured, and the circuit device can not generate problems when the whole display screen is changed from shallow to deep quickly. In the cabin, the magneto-resistance array 2 is used as a sensor sensing circuit, the fixing block 5 is used for fixing the sensor, the working position of the sensor is fixed, the vibration of the sensor can be reduced to the greatest extent, and the fixing block 5 is provided with a fixing threaded hole 7; data transmission processing can be carried out through the communication watertight plug-in interface 4, and meanwhile, the extensible communication interface 6 is reserved to be used as a communication interface for extension and networking, so that long-distance networking transmission is met. The TMR chip array can be of a cylindrical structure, an oil bag is arranged at the end of a pipeline, in order to eliminate magnetic interference to the maximum extent, only one sixth of the reserved surface area of the whole pipeline is not subjected to magnetic shielding, and the TMR chip array is aligned with the permanent magnetic ferrite and serves as an initial position, namely an initial coordinate.
In this embodiment, the permanent magnetic ferrite 9 is a hollow cylinder, the hollow inner diameter is D, the height of the permanent magnetic ferrite is L, and the outer diameter is D, so as to satisfy the requirement
So that the average magnetic induction intensity of the permanent magnetic ferrite can be approximately regarded as the central magnetic induction intensity, the magnetic induction intensity of the permanent magnetic ferrite is maximum at the center of a circle and gradually decreases along two ends of the axis, and the magnetic induction intensity and the two ends of the axis are symmetrically distributed.
The relationship between the magnetic induction intensity distribution and the distance of the permanent magnetic ferrite 9 described in this embodiment satisfies the following equation,
B(x)＝Bo*L 2 *(2x+L) 2 ，
wherein x is the distance from the tunnel magneto-resistor chip to the axis of the permanent magnetic ferrite, L is the height of the permanent magnetic ferrite, and Bo is the magnetic induction intensity at the circle center of the permanent magnetic ferrite;
when the magnetic induction intensity of the permanent magnetic ferrite and the minimum error needing to be measured are known, the relative placement positions of the permanent magnetic ferrite and the permanent magnetic ferrite chip can be determined. The magnetic sensor can obtain corresponding feedback by sensing the change of a surrounding magnetic field, the working characteristic of the sensor is determined by the distribution of the magnetic field intensity, when the permanent magnetic ferrite is positioned at the midpoint of two tunnel magneto-resistance chips on the array, the magnetic induction intensity of the point is calculated, the intensity is the minimum magnetic induction intensity sensed by the tunnel magneto-resistance chips, and the feedback can be made when the tunnel magneto-resistance chips sense the value which is larger than the minimum sensed magnetic field. For example, when the magnetic induction intensity of the permanent magnetic ferrite is selected to be Bo ═ 0.15T and the minimum error Δ E ═ 0.5cm, and the height L of the permanent magnetic ferrite is known, the value of x, that is, the sensing distance can be determined.
The MCU adopts STM32 of an intentional semiconductor and adopts an RC clock circuit built in a chip as a clock of the chip. When the chip clock circuit is applied to the submarine high-voltage and high-frequency vibration environment, the crystal oscillator circuit cannot work normally for too long time, so that the chip clock circuit is not used, and the RC clock circuit built in the chip is selected as the chip clock. According to the investigation, when the pressure reaches 10000m of the seabed, the pressure is about 1000 times of the normal atmospheric pressure, the chip is manufactured by adopting the STM32 of the semiconductor adopting the intentional method, the process of 130nm is adopted, the critical load born by the monocrystalline silicon is 80MN, and the critical load can meet the normal atmospheric pressure of 800 hundred million times through conversion, so that the mechanical damage to the wafer can not be generated, and the RC circuit can normally operate in deep sea.
The MCU described in this embodiment is provided with two data processing modes, which are a data latch type and a data input buffer type, respectively. The purpose is in order to avoid the interference of uncertain factors such as external high vibrations to a great extent.
This embodiment the data latch type is tunnel magnetism resistance chip feedback pin passes through the pin of latch and is connected with MCU's IO mouth, and the chip is inside to have the feedback after tunnel magnetism resistance chip senses the magnetic field in the working range, and the latch catches through pulse, just is the setting 1 with this position state in case catch successfully, shows that this coordinate point has reached. A74 HC573 series latch is used in the integrated circuit board, the latch has 8 input and output functions, output ends are connected with Pin13, Pin14, Pin15, Pin18, Pin19, Pin20, Pin21 and Pin22 of the MCU, the IO ports are multiplexed into an ADC function for monitoring, and the MCU obtains data coordinates by accessing data bits of the state of the latch so as to calculate. The data latch type scheme has the advantages that when the submarine surveying equipment works with high-frequency vibration, instantaneous motion expansion and contraction can occur, the common sensor can have the problems of repeated data drifting and the like, once the data latch acquires the feedback of the TMR chip, the data latch in the invention can set the corresponding internal state position, the data abnormity caused by equipment vibration of external surveying equipment in a short time is effectively avoided, meanwhile, the latch is also suitable for high-speed displacement measurement, and the latch is quite sensitive to data capture and also has good data capture capacity for the working equipment which moves fast.
In this embodiment, the data input buffer type creates a data buffer area for the MCU, and receives data sent by the tunnel magnetoresistive chip array in cooperation with the DMA. And when the data is refreshed, the kernel immediately enters DMA (direct memory access) to interrupt the data to acquire and process the data, and then a result is obtained by calculation. The input buffer type has extremely high data refreshing capability, can inquire data in the buffer area at a high speed, has the processing speed reaching a microsecond level and far exceeds the vibration frequency of normal common motor equipment, and thus can adapt to normal work in a high-vibration environment.
According to the actual marine surveying equipment, in normal surveying equipment work, the equipment is generally in a constant speed working mode, the equipment can be protected to the maximum extent by the working mode, and meanwhile, the displacement precision can be improved compared with the relative speed of a system in a near stage. In this embodiment, the data processing of the MCU adopts an abnormal data dynamic compensation and correction method, which is specifically as follows:
(1) entering a memory through timer interruption, and calculating the speed of a near stage from a certain amount of data and system time reserved in the memory;
(2) comparing the speed of the near stage as a reference value with later data;
(3) when the unit time is not changed, the displacement data has larger error when the error of more than +/-50% occurs in the relative speed, the dynamic compensation correction technology mainly uses an arithmetic mean filtering method, and the arithmetic mean filtering method is according to a plurality of input sampling data x i Finding a relatively stable speed y Optimization of So that y is Optimization of The sum of squares of deviations from the respective sampled data is minimal, i.e.
The data of the near phase is stored in the memory as sampling data, and the near phase y can be calculated Optimization of Pass and exception data y Abnormality (S) And performing weight calculation to obtain correction data. The arithmetic mean filtering algorithm is used in places with random interference data, and the displacement output data is more accurate through the arithmetic mean filtering algorithm.
In consideration of the practical requirements of scientific research projects, the existing long-distance displacement sensor devices are huge, and considerable inconvenience exists in the transportation and installation processes, aiming at the problem existing in practice, a splicing interface is reserved in the design process of the integrated circuit, all TMR chip array circuits CAN be spliced through 485 or CAN communication interfaces in the circuit, a special communication protocol is used, data of different arrays are formed by combining address codes, data bits and data verification, CRC data verification is added, the software and hardware design greatly improves the convenience of the devices in the transportation and installation processes, the space cost and the installation cost required by the sensor are quite low, and the 485modbus communication protocol is exemplified as follows:
| data command ID | Command description |
| 0x00 0x01 0x00 0x00 0x00 0x00 0x3D 0xDB | Data return |
The first bit is an address bit, the second bit to the sixth bit are data bits, the last two bits are CRC data check bits, different array circuit boards are mounted through 485 or CAN, analysis is carried out according to returned data after inquiry, and a displacement result is obtained through calculation.
Claims (9)
1. The utility model provides a full sea depth non-contact tunnel magneto resistor array displacement sensor which characterized in that: the magnetic field direction of the permanent magnetic ferrite is parallel to the sensitive axis direction of the tunnel magneto-resistance chip;
wherein the relationship between the magnetic induction intensity distribution and the distance of the permanent magnetic ferrite satisfies the following equation,
B(x)＝Bo*L 2 *(2x+L) 2 ，
wherein x is the distance from the tunnel magnetoresistance chip to the axis of the permanent magnetic ferrite, L is the height of the permanent magnetic ferrite, and Bo is the magnetic induction intensity at the center of the permanent magnetic ferrite;
when the magnetic induction intensity of the permanent magnetic ferrite and the minimum error needing to be measured are known, the relative placement positions of the permanent magnetic ferrite and the permanent magnetic ferrite chip can be determined;
the integrated circuit of the tunnel magneto-resistance chip comprises an integrated circuit board, wherein an MCU and a plurality of tunnel magneto-resistance chips which are equidistantly arranged on a straight line are integrated on the integrated circuit board, a feedback pin of each tunnel magneto-resistance chip is connected with an IO port of the MCU, and the integrated circuit board is electrically connected with a DC-DC power supply module for supplying power;
the tunnel magneto-resistance chip integrated circuit is arranged in a sealed cabin, light oil is filled in the sealed cabin, an oil bag for balancing the internal and external pressure of the cabin is arranged on the sealed cabin, and a magnetic shielding layer is arranged outside the sealed cabin;
an expandable communication interface used for extension and networking and a communication watertight plug-in interface used for data transmission are arranged outside the sealed cabin, and the expandable communication interface and the communication watertight plug-in interface are electrically connected with the MCU.
2. The full-sea-depth non-contact tunneling magnetoresistive array displacement sensor according to claim 1, wherein: the permanent magnetic ferrite is in a hollow cylinder shape, the hollow inner diameter is D, the height of the permanent magnetic ferrite is L, and the outer diameter is D, so that the requirement of the permanent magnetic ferrite on the requirement of the middle is met
The relationship (2) of (c).
3. The full-sea-depth non-contact tunneling magnetoresistive array displacement sensor according to claim 1, wherein: and a fixing block for fixing is arranged outside the sealed cabin.
4. The full-sea-depth non-contact tunneling magnetoresistive array displacement sensor according to claim 1, wherein: the MCU is provided with two data processing modes, namely a data latch type and a data input buffer type.
5. The full-sea-depth non-contact tunneling magnetoresistive array displacement sensor according to claim 4, wherein: the data latching type is that tunnel magnetism resistance chip feedback pin passes through the pin of latch and is connected with MCU's IO mouth, and the magnetic field in working range is sensed to tunnel magnetism resistance chip back chip inside has the feedback, and the latch catches through pulse, just in case catch successfully with this position state for setting 1, shows that this coordinate point has already arrived.
6. The full-sea-depth non-contact tunneling magnetoresistive array displacement sensor according to claim 4, wherein: and the data input buffer type establishes a data buffer area for the MCU and is matched with the DMA to receive data sent by the tunnel magneto-resistor chip array.
7. The full-sea-depth non-contact tunneling magnetoresistive array displacement sensor according to claim 1, wherein: the data processing of the MCU adopts an abnormal data dynamic compensation correction mode, which specifically comprises the following steps:
(1) entering a memory through timer interruption, and calculating the speed of a near stage from a certain amount of data and system time reserved in the memory;
(2) comparing the speed of the near stage as a reference value with later data;
(3) when the unit time is not changed, the displacement data has large errors when the error of more than +/-50% occurs in the relative speed, the dynamic compensation correction technology mainly uses an arithmetic mean filtering method, and the arithmetic mean filtering method is according to a plurality of input sampling data X i Finding a relatively stable speedy Optimization of So that y is Optimization of The sum of squares of deviations from the respective sampled data is minimal, i.e.
The data of the near phase is stored in the memory as sampling data, and the near phase y can be calculated Optimization of Pass and exception data y Optimization of And performing weight calculation to obtain correction data.
8. The full-sea-depth non-contact tunneling magnetoresistive array displacement sensor according to claim 1, wherein: and a plurality of full-sea-depth non-contact tunnel magneto-resistance array displacement sensors are spliced by an array circuit through 485 or CAN communication interfaces, the data of different arrays is formed by combining address codes, data bits and data verification, and CRC data verification is added.
9. The full-sea-depth non-contact tunneling magnetoresistive array displacement sensor according to claim 1, wherein: the MCU adopts STM32 of an ideological semiconductor, and adopts an RC clock circuit built in a chip as a clock of the chip.
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