CN201713568U - Sputtering device provided with cooling sunshade - Google Patents
Sputtering device provided with cooling sunshade Download PDFInfo
- Publication number
- CN201713568U CN201713568U CN2010201866598U CN201020186659U CN201713568U CN 201713568 U CN201713568 U CN 201713568U CN 2010201866598 U CN2010201866598 U CN 2010201866598U CN 201020186659 U CN201020186659 U CN 201020186659U CN 201713568 U CN201713568 U CN 201713568U
- Authority
- CN
- China
- Prior art keywords
- cooling
- sputtering apparatus
- cooling shield
- vacuum cavity
- metal targets
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
The utility model provides a sputtering device provided with a cooling sunshade, which includes a vacuum cavity. The vacuum cavity is provided with a vacuumizing outlet and an air inlet; the vacuumizing outlet is used for pumping out the air inside the vacuum cavity so as to keep a vacuum state; while the gas inlet is used for inputting working gas. The vacuum cavity is provided with a metal target connected with the cathode end of a high voltage power and is apart from the metal target at a predetermined interval and is connected with the anode end of the high voltage power; the load device can hold a workpiece to be sputtered; the sputtering device even includes a cooling sunshade which is connected with a cooling water path system, is neighboring to the metal target; moreover, a preset angle is formed between the cooling sunshade and the vertical direction of the metal target and the load device.
Description
[technical field]
The utility model relates to a kind of sputtering apparatus, particularly about a kind of sputtering apparatus with cooling shield.
[background technology]
In various electron correlation industries now, (EMI, protection ElectromagneticInterference) are one of important problems for the electron correlation industry to electromagnetic interference.Anti-system electromagnetic interference (EMI commonly used at present, Electromagnetic Interference) processing technology, include electric conduction paint, metal iron plate, plating, vacuum splashing and plating method and aluminum magnesium alloy etc., wherein because vacuum splashing and plating tool price absolute predominance, no environmental protection problem, and compare other worker's methods more frivolous (0.3~0.5 μ m), be considered to be developing tendency in future.Yet when carrying out sputter, the atomic orientation that the metal targets surface is sputtered is uncontrollable, has therefore limited the film forming efficiency of target workpiece.In addition, the target workpiece is being carried out in the process of sputter, can disengage a large amount of heats inevitably the intravital temperature of vacuum chamber is raise.Therefore, effectively radiating mode also has suitable importance.
[summary of the invention]
The uncontrollable problem of atomic orientation that the metal targets surface is sputtered when solving sputter, and the high temperature that is produced in vacuum cavity when reducing sputter effectively, the purpose of this utility model is to provide a kind of sputtering apparatus with cooling shield.
The utility model for solving the technique means that prior art problems adopted is: a kind of sputtering apparatus with cooling shield, comprise a vacuum cavity, have one and vacuumize an outlet and a gas inlet, vacuumize outlet in order to the vacuum cavity gas inside being extracted out keeping vacuum state, and the gas inlet is in order to import a working gas.Dispose in the vacuum cavity: a metal targets is connected in the cathode terminal of a high-voltage power supply; One carrier keeps a predetermined spacing with metal targets and is connected in the positive terminal of high-voltage power supply, and carrier can be put a target workpiece of desiring to carry out sputter; Sputtering apparatus more include one the cooling shield, the cooling shield be connected in a cooling water channel system, and the cooling shield be adjacent to metal targets and keep a predetermined distance, and and metal targets and carrier between vertical direction accompany a predetermined angular.
By the technique means that the utility model adopted, the direction by cooling off the predetermined angular that shield accompanies, can effectively limit target the atom that is sputtered makes the target workpiece have better film forming efficiency.On the other hand, because the cooling shield is connected in the cooling water channel system, and is adjacent to the metal targets that produces high heat, can more effectively take the heat that produces out of vacuum cavity by the circulation of water coolant when sputter.Generally speaking, can effectively improve the usefulness of sputtering process, and improve the heat dissipation problem of sputtering apparatus in the prior art.
[description of drawings]
Fig. 1 is the synoptic diagram that the utlity model has the sputtering apparatus of cooling shield;
Fig. 2 the utlity model has the sputtering apparatus of cooling shield at the synoptic diagram that carries out sputter.
The main element nomenclature:
100 sputtering apparatuss, 4 cooling shields
1 vacuum cavity C cooling water channel system
11 vacuumize outlet D1, D2 predetermined spacing
12 gas inlet P atoms
2 metal targets V high-voltage power supplies
3 carrier α predetermined angulars
31 target workpiece, 4 cooling shields
[embodiment]
Consult Fig. 1, for the utlity model has the synoptic diagram of the sputtering apparatus that cools off shield.As shown in the figure, sputtering apparatus 100 comprises a vacuum cavity 1, and vacuum cavity 1 has one and vacuumizes outlet 11 and one gas inlet 12, vacuumizes outlet 11 in order to vacuum cavity 1 gas inside is extracted out to keep vacuum state, and gas inlet 12 is in order to import a working gas, for example argon gas.Dispose a metal targets 2 and a carrier 3 in the vacuum cavity 1.Carrier 3 keeps a predetermined spacing D1 with metal targets 2, and metal targets 2 is connected in the cathode terminal of a high-voltage power supply V, and carrier 3 is connected in the positive terminal of high-voltage power supply V, and high-voltage power supply V can be a direct current power supply or an AC power, decides on the sputtering way that institute's desire is used.When carrying out sputter, utilize interelectrode high potential gradient will make the argon gas of feeding free, argon gas ion promptly clashes into to negative electrode, and the atomic collision of metal targets 2 is come out, and makes the atomic deposition of metal targets 2 form metallic film on the target workpiece 31 that is placed in carrier 3.
Consult Fig. 2, for the utlity model has the cooling shield sputtering apparatus at the synoptic diagram that carries out sputter.As shown in the figure, when carrying out sputter,, make argon gas ion clash into out, the atom P of metal targets 2 is deposited on the target workpiece that is seated in carrier 3 forms metallic film to the negative electrode bump and with the atom P of metal targets 2 because argon gas is free.Simultaneously, under the situation that disposes cooling shield 4,, can effectively limit the direction of the atom P that sputters, so that target workpiece 31 has better film forming efficiency because cooling shield 4 accompanies a predetermined angle.On the other hand, because cooling shield 4 is connected in the C of cooling water channel system, and is adjacent to this metal targets 2, can more effectively take the heat that produces out of vacuum cavity 1 by the circulation of water coolant when sputter.
By above embodiment as can be known; the utility value that has on the true tool industry of sputtering apparatus of cooling off shield provided by the utility model; but above narration only is preferred embodiment explanation of the present utility model; those skilled in the art can do other all improvement according to above-mentioned explanation, and these changes still belong to protection domain of the present utility model.
Claims (5)
1. one kind has the sputtering apparatus that cools off shield, comprise a vacuum cavity, have one and vacuumize an outlet and a gas inlet, this vacuumizes outlet in order to this vacuum cavity gas inside is extracted out to keep vacuum state, and this gas inlet disposes in this vacuum cavity in order to import a working gas:
One metal targets is connected in the cathode terminal of a high-voltage power supply;
One carrier keeps a predetermined spacing with this metal targets and is connected in the positive terminal of this high-voltage power supply, and this carrier can be put a target workpiece of desiring to carry out sputter;
It is characterized in that, this sputtering apparatus includes a cooling shield, this cooling shield is connected in a cooling water channel system, and this cooling shield is adjacent to this metal targets and keeps a predetermined distance, and and this metal targets and this carrier between vertical direction accompany a predetermined angular.
2. the sputtering apparatus with cooling shield as claimed in claim 1 is characterized in that, the folded predetermined angular of this cooling shield is 30~85 degree.
3. the sputtering apparatus with cooling shield as claimed in claim 1 is characterized in that the predetermined distance between this cooling shield and this metal targets is 5~15 centimetres.
4. the sputtering apparatus with cooling shield as claimed in claim 1 is characterized in that this working gas is an argon gas.
5. the sputtering apparatus with cooling shield as claimed in claim 1 is characterized in that this high-voltage power supply is direct supply or AC power.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2010201866598U CN201713568U (en) | 2010-05-07 | 2010-05-07 | Sputtering device provided with cooling sunshade |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2010201866598U CN201713568U (en) | 2010-05-07 | 2010-05-07 | Sputtering device provided with cooling sunshade |
Publications (1)
Publication Number | Publication Date |
---|---|
CN201713568U true CN201713568U (en) | 2011-01-19 |
Family
ID=43459568
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2010201866598U Expired - Lifetime CN201713568U (en) | 2010-05-07 | 2010-05-07 | Sputtering device provided with cooling sunshade |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN201713568U (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103443324A (en) * | 2011-03-29 | 2013-12-11 | 松下电器产业株式会社 | Film forming apparatus and film forming method |
-
2010
- 2010-05-07 CN CN2010201866598U patent/CN201713568U/en not_active Expired - Lifetime
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103443324A (en) * | 2011-03-29 | 2013-12-11 | 松下电器产业株式会社 | Film forming apparatus and film forming method |
CN103443324B (en) * | 2011-03-29 | 2015-09-02 | 松下电器产业株式会社 | Film deposition system and film |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN105755441B (en) | A kind of method that magnetron sputtering method expands infiltration heavy rare earth raising coercivity of sintered ndfeb | |
EP1067578A3 (en) | Methods and apparatus for ionized metal plasma copper deposition with enhanced in-film particle performance | |
US20110220494A1 (en) | Methods and apparatus for magnetron metallization for semiconductor fabrication | |
RU2012111218A (en) | ION-PLASMA ELECTRON RADIATORS FOR Smelting Furnace | |
CN111164234B (en) | Coating device for efficient low-temperature coating | |
EP3057119B1 (en) | Coating apparatus and coating process for ndfeb magnets | |
Ferrec et al. | Correlation between mass-spectrometer measurements and thin film characteristics using dcMS and HiPIMS discharges | |
TW200538569A (en) | Sputtering method and sputtering system | |
WO2011111712A1 (en) | Sputtering device | |
CN108315703A (en) | A kind of preparation method of coating system and film plating process and rare-earth magnet | |
CN201713568U (en) | Sputtering device provided with cooling sunshade | |
CN102465260A (en) | Chamber assembly and semiconductor processing equipment with application of same | |
CN103114272A (en) | Cylindrical magnetron sputtering cathode | |
JP2009293089A (en) | Sputtering system | |
KR102158659B1 (en) | Encapsulated magnetron | |
TW201127978A (en) | Magnetron sputtering electrode and sputtering device | |
CN201793722U (en) | Vacuum multi-arc ion plating machine | |
CN101949000A (en) | Vacuum magnetron sputtering multi-arc ion composite coating machine | |
JP2012201910A (en) | Magnetron sputtering electrode and sputtering apparatus | |
CN103122444A (en) | Novel ion nitriding furnace with hot air circulation function | |
CN104532199A (en) | Cathode for medium-frequency magnetron sputtering coating | |
CN108411246A (en) | Improve the ancillary equipment and method of low-alloy structural steel surface ion nitriding efficiency | |
CN103484928A (en) | Plasma-based steel product derusting polishing method | |
CN209830275U (en) | System for preparing metal powder | |
CN104926367A (en) | Method for depositing alloy layer on surface of ceramic |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CX01 | Expiry of patent term | ||
CX01 | Expiry of patent term |
Granted publication date: 20110119 |