CN201673420U - Miniature resonator temperature control system - Google Patents
Miniature resonator temperature control system Download PDFInfo
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- CN201673420U CN201673420U CN2010202232852U CN201020223285U CN201673420U CN 201673420 U CN201673420 U CN 201673420U CN 2010202232852 U CN2010202232852 U CN 2010202232852U CN 201020223285 U CN201020223285 U CN 201020223285U CN 201673420 U CN201673420 U CN 201673420U
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Abstract
The utility model provides a novel temperature control system applied to a miniature resonator. The miniature resonator temperature control system comprises the miniature resonator, a miniature resonator driving circuit, a temperature control circuit and a temperature actuator element, wherein the miniature resonator adopts a comb-shaped resonator structure, and the miniature resonator driving circuit adopts an automatic gain control mode. A closed loop circuit is formed by the miniature resonator driving circuit and the miniature resonator; the miniature resonator driving circuit ensures that the miniature resonator generates stable oscillation signals; the temperature control circuit measures signals, changing along with temperature, of the miniature resonator driving circuit; the temperature control circuit outputs the signals to the temperature actuator element after computing amplification; and the temperature actuator element ensures constant temperature of the miniature resonator under the action of the temperature control circuit. The miniature resonator temperature control system uses the property of the inherent temperature of Q value of the miniature resonator without a temperature sensor, not only reduces the volume and the cost of the temperature control system, but also improves temperature detecting precision, and shortens the response time of the temperature control system.
Description
Technical field
The utility model belongs to and the micro-system device is carried out temperature controlled technology, particularly a kind of microresonator temperature control system.
Background technology
Micro-resonator is a kind of typical micro-system (MEMS) device, and application is wide.Micro-resonator not only can be used as little frequency source and substitutes quartz oscillator, and is the key structure parts of microsensor such as micro-resonance type accelerometer, micro-resonance type gyroscope, micro-clamp and microactrator, also is the key structure of small mechanical filter.Micro-resonator has that volume is little, cost is low, shock resistance, characteristics such as can process in enormous quantities.
Micro-resonator generally is material with silicon, adopts semiconducter process to make.Micro-resonator vibration under the effect of excitation is exported stable frequency signal at natural frequency point place.Because silicon is temperature-sensitive material, under the effect of Young modulus temperature coefficient and thermal expansivity, the natural frequency value of micro-resonator changes with temperature, so the micro-resonator natural frequency is the sensitivity function of temperature.When temperature change, the frequency of micro-resonator also changes thereupon, and this phenomenon has had a strong impact on its frequency stability, has also limited its range of application.When micro-resonator was used as the frequency reference source, the instability of micro-resonator frequency can cause the disorder of circuit sequence; In micro-resonance type micro-acceleration gauge and the little gyro of micro-resonance type, the instability of micro-resonator frequency can cause the output drift of accelerometer and gyro; In small mechanical filter, the instability of micro-resonator frequency can cause departing from of filtering cutoff frequency, so the temperature stability of micro-resonator frequency is most important.
1993, Clark T.-C.Nguyen and Roger T.Howe have proposed a kind of temperature control system (Clark T.-C.Nguyen of micro-resonator, Roger T.Howe.Microresonator Frequency Control and StabilizationUsing an Integrated Micro Oven.Dig.Transducers ' 93, Int.Conf.Solid-State Sensors andActuators, pp.1040-1043), this scheme is with temperature sensor and the temperature executive component is integrated is encapsulated in the micro-resonator shell, temperature sensor adopts thermistor, the temperature executive component is a resistive heater, temperature in the thermosensitive resistance measurement micro-resonator shell cavity, temperature signal is handled the work of rear drive resistive heater through temperature-control circuit, thereby guarantees that the micro-resonator temperature keeps constant.Because there are heat balance time in temperature field skewness and temperature field in the micro-resonator shell cavity, and thermistor and the micro-resonator structure distribution diverse location in micro-resonator encapsulation shell, so there is the hysteresis of temperature error and time in the temperature of the temperature of thermosensitive resistance measurement and micro-resonator structure itself.
2008, people such as Bongsang Kim have proposed to utilize the temperature controlled scheme of a kind of micro-resonator (BongsangKim, Matthew A.Hopcroft, etc.Temperature Dependence of Quality Factor in MEMSResonators.Microelectromechanical Systems.Vol.17, No.3, June 2008), this method utilizes micro-resonator Q value to exist the characteristic of temperature coefficient to measure the temperature of micro-resonator.When temperature change, the change of micro-resonator Q value causes the change of micro-resonator output signal amplitude, and temperature-control circuit detects the variable quantity of this signal amplitude, the work of control temperature actuator, thus guarantee that the micro-resonator temperature keeps constant.This method is utilized the micro-resonator inherent characteristic, do not need temperature sensor, it is little to make temperature control system have a volume, cost is low, the precision height, the advantage that response time is short, but the type of drive of its micro-resonator structure is the capacity plate antenna formula, the driving voltage of this mode and drive displacement exist non-linear, its micro-resonator driving circuit is the amplitude limit driving circuit, so its drive signal that inputs to micro-resonator is constant clipped signal, is subject to disturb so cause the oscillation amplitude of micro-resonator to regulate automatically with environment, its heater strip only is distributed in a side of micro-resonator, has the long problem of heating asymmetry and heat balance time.
Summary of the invention
The purpose of this utility model is to provide a kind of microresonator temperature control system, and this temperature control system need not the temperature sensor measurement temperature, and system bulk is little, cost is low, the precision height, and the response time is short, be easy to realize, and the micro-resonator oscillation amplitude can be regulated automatically and kept constant.
The technical solution that realizes the utility model purpose is: a kind of microresonator temperature control system, by micro-resonator, the micro-resonator driving circuit, temperature-control circuit, the temperature executive component constitutes micro-resonator temperature control closed loop, wherein micro-resonator driving circuit and micro-resonator constitute micro-resonator driving closed loop, described micro-resonator driving circuit drives micro-resonator makes its steady operation at natural frequency point place, the micro-resonator of micro-resonator driving circuit output drives AC signal for driving the AC signal of micro-resonator work, the dc offset voltage of micro-resonator driving circuit output is for driving the dc offset voltage signal of micro-resonator work, thereby the micro-resonator driving circuit drives micro-resonator self-sustained oscillation, stable output micro-resonator vibration sensing sensed current signal, this micro-resonator vibration sensing sensed current signal is the input signal of micro-resonator driving circuit simultaneously, the Q value of micro-resonator has temperature coefficient and causes the voltage effective value signal in the micro-resonator driving circuit to vary with temperature, temperature-control circuit takes out the voltage effective value signal and carries out the work of computing amplification rear drive temperature executive component, make the temperature of micro-resonator keep constant, the temperature executive component is made of the first temperature executive component and the second temperature executive component, be symmetrically distributed in up and down the micro-resonator both sides and with the integrated processing of micro-resonator on same silicon chip.
The utility model compared with prior art, its remarkable advantage: (1) microresonator temperature control system has utilized micro-resonator Q value to have the inherent characteristic of temperature coefficient, it directly reflects the temperature value of micro-resonator, can measure resonator temperature by the voltage effective value signal of measuring in the micro-resonator circuit, need not the temperature sensor measurement temperature, the volume and the cost of temperature control system have been reduced, compare with the mode that adopts the temperature sensor measurement temperature, there is not the time-delay of temperature measurement system sum of errors temperature transfer in this system, the precision height is subjected to ectocine little.(2) microresonator temperature control system is applicable to the micro-resonator version of various structures, has versatility widely.(3) the micro-resonator driving circuit adopts the automatic gain control mode in the microresonator temperature control system, make the micro-resonator driving circuit control, regulate the resonance state that little resonance is operated in uniform amplitude automatically, compare amplitude limit driving circuit mode, the vibration of micro-resonator is more stable, and is affected by environment little.(4) the setting working temperature value of microresonator temperature control system can be regulated by the temperature setting voltage in the temperature-control circuit, and having the working temperature value can freely set, and temperature is set the simple advantage of implementation.(5) the temperature executive component of microresonator temperature control system is symmetrically distributed in micro-resonator both sides up and down, and temperature executive component symmetry heating micro-resonator heats faster and heat balance time is shorter.(6) micro-resonator of microresonator temperature control system, micro-resonator driving circuit, temperature-control circuit and temperature executive component are processed on same silicon single crystal wafer and are adopted wafer-level packaging technology Vacuum Package, the microresonator temperature control system wafer of Vacuum Package is installed in the shell, the isolated ambient temperature of filling heat insulator between System on chip and the shell, compare traditional temperature control system, its volume is little, can be less than 1cm
3Precision height, temperature control precision can reach 0.01 ℃; System response time is short, and the system balancing time can be less than 1min; System power dissipation is low, and the entire system power consumption is in the milliwatt magnitude.(7) microresonator temperature control system is widely used, and can be applied to the temperature control of any microsensor that contains the micro-resonator structure and microactrator, micro-filter, little frequency source.
Below in conjunction with accompanying drawing the utility model is described in further detail.
Description of drawings
Fig. 1 is the microresonator temperature control system schematic block diagram.
Fig. 2 is micro-resonator and temperature activator structure synoptic diagram.
Fig. 3 is a micro-resonator driving circuit schematic block diagram.
Fig. 4 is the temperature-control circuit schematic block diagram.
Fig. 5 is the microresonator temperature control system synoptic diagram.
Embodiment
In conjunction with Fig. 1, the utility model microresonator temperature control system, the characteristics of utilizing micro-resonator Q value to have temperature coefficient realize temperature survey, system need not temperature sensor, constitute micro-resonator temperature control closed loop by micro-resonator 200, micro-resonator driving circuit 300, temperature-control circuit 400, temperature executive component 500, wherein micro-resonator driving circuit 300 constitutes micro-resonator driving closed loop with micro-resonator 200.Described micro-resonator driving circuit 300 drives micro-resonator 200 makes its steady operation at natural frequency point place, the micro-resonator of micro-resonator driving circuit 300 outputs drives AC signal 313 for driving the AC signal of micro-resonator work, the dc offset voltage 314 of micro-resonator driving circuit 300 outputs is for driving the dc offset voltage signal of micro-resonator 200 work, thereby micro-resonator driving circuit 300 drives micro-resonator 200 self-sustained oscillations, stable output micro-resonator vibration sensing sensed current signal 310, this micro-resonator vibration sensing sensed current signal 310 is the input signal of micro-resonator driving circuit 300 simultaneously, the Q value of micro-resonator 200 has temperature coefficient and causes the voltage effective value signal 312 in the micro-resonator driving circuit 300 to vary with temperature, temperature-control circuit 400 takes out voltage effective value signal 312 and carries out 500 work of computing amplification rear drive temperature executive component, make the temperature of micro-resonator 200 keep constant, temperature executive component 500 is made of the first temperature executive component 500a and the second temperature executive component 500b, be symmetrically distributed in up and down micro-resonator 200 both sides and with micro-resonator 200 integrated processing on same silicon chip.
Wherein, the material of micro-resonator 200 structures and temperature executive component 500 structures is monocrystalline silicon and adopts integrated processing technology to make micro-resonator 200, micro-resonator driving circuit 300, temperature- control circuit 400 and 500 processing of temperature executive component on same silicon single crystal wafer.The microresonator temperature control system of processing on same silicon chip is installed in the shell 601 after adopting wafer-level packaging technology Vacuum Package, and filling heat insulator 602 is isolated wafer and external environment heat between the microresonator temperature control system wafer 220 of Vacuum Package and the shell.
In conjunction with Fig. 2, the concrete structure of the utility model microresonator temperature control system is with micro-resonator 200, micro-resonator driving circuit 300, temperature-control circuit 400, temperature executive component 500 is integrated as follows: described micro-resonator 200 is for being produced on the pectination micro-resonator structure on the monocrystalline silicon, on monocrystal silicon substrate 210, process signal lead, pectination micro-resonator structure is by the fixing tuning fork 202 of both-end, the left side drives linear comb broach 203a, the right drives linear comb broach 203b, the left side first responsive linear comb broach 204a, the left side second responsive linear comb broach 204b, the right first responsive linear comb broach 204c and the right second responsive linear comb broach 204d form, wherein both-end fixedly tuning fork 202 be fixed on the monocrystal silicon substrate 210 by last anchor point 201a and following anchor point 201b suspension, the left side drives linear comb broach 203a and the right driving linear comb broach 203b is that driving comb is anchored on the monocrystal silicon substrate 210, the left side first responsive linear comb broach 204a, the left side second responsive linear comb broach 204b, the right first responsive linear comb broach 204c, the right second responsive linear comb broach 204d is that detection comb is anchored on respectively on the monocrystal silicon substrate 210, processing is connected also at left side drive electrode 205a on the monocrystal silicon substrate 210 and left side driving linear comb broach 203a, and on the left side drives the alternating voltage that applies direct current biasing on the linear comb broach 203a, processing drives on the right drive electrode 205b on the monocrystal silicon substrate 210 and the right that the linear comb broach connects and applies the alternating voltage of identical direct current biasing on the right on the linear comb broach 203b, and left side sensitive electrode 205c and the right sensitive electrode 205d export the left side first responsive linear comb broach 204a respectively, the left side second responsive linear comb broach 204b and the right first responsive linear comb broach 204c, the micro-resonator vibration sensing sensed current signal 310 of the right second responsive linear comb broach 204d.The left side first responsive linear comb broach 204a and the left side second responsive linear comb broach 204b are connected to the left side sensitive electrode 205c of processing on monocrystal silicon substrate 210, and the right first responsive linear comb broach 204c and the right second responsive linear comb broach 204d are connected to the right sensitive electrode 205d of processing on monocrystal silicon substrate 210; When the output micro-resonator of micro-resonator driving circuit 300 drives AC signal 313 and dc offset voltage 314 on left side drive electrode 205a, the right drive electrode 205b, driving comb electric capacity is applied to the driving force of conversion of signals Cheng Yuqi same frequency on the micro-resonator 200.When the signal frequency of driving voltage equals the natural frequency of micro-resonator 200 structures, micro-resonator 200 produces resonance, and the micro-resonator vibration sensing sensed current signal 310 of the same frequency of the left side first responsive linear comb broach 204a, the left side second responsive linear comb broach 204b of micro-resonator 200, the right first responsive linear comb broach 204c, the right second responsive linear comb broach 204d detection output reaches maximal value at this moment.Temperature executive component 500 is for being symmetrically distributed in the heater strip of micro-resonator both sides, the temperature control signals 411 of temperature-control circuit output is by the temperature executive component upside first electrode 503a, the temperature executive component upside second electrode 503b, the temperature executive component downside first electrode 503c, the temperature executive component downside second electrode 503d is applied to the first resistance wire 501a, the second resistance wire 501b two ends, the first resistance wire 501a, the second resistance wire 501b structure is by the temperature executive component top first anchor point 502a, the temperature executive component top second anchor point 502b, the following first anchor point 502c of temperature executive component, the following second anchor point 502d of temperature executive component suspends and is fixed on the monocrystal silicon substrate 210.
As Fig. 3, the micro-resonator driving circuit 300 of the utility model microresonator temperature control system adopts the automatic gain control mode, by transreactance amplifier 301, true rms circuit 302, gain control circuit 303, dc bias circuit 304 is formed, wherein the left side sensitive electrode 205c of micro-resonator 200 and the right sensitive electrode 205d are connected to the input end of transreactance amplifier 301, the output terminal of gain control circuit 303 is connected to left side drive electrode 205a and the right drive electrode 205b, transreactance amplifier 301 is converted into transreactance amplifier output voltage signal 311 with the micro-resonator vibration sensing sensed current signal 310 of left side sensitive electrode 205c and the right sensitive electrode 205d output, transreactance amplifier output voltage signal 311 one tunnel detects the signal input end of conversion back output voltage effective value signal 312 to gain control circuit 303 through true rms circuit 302, transreactance amplifier output voltage signal 311 another roads input to the controlled signal input end of gain control circuit 303, gain control circuit 303 is the enlargement factor output micro-resonator driving AC signal 313 that control signal is regulated transreactance amplifier output voltage signal 311 with voltage effective value signal 312, it is the input exchange signal of left side drive electrode 205a and the right drive electrode 205b that micro-resonator drives AC signal 313, and it makes micro-resonator 200 oscillation amplitudes keep constant; Dc bias circuit 304 on the left side drive electrode 205a, the right drive electrode 205b, left side sensitive electrode 205c, the right sensitive electrode 205d apply the required dc offset voltage 314 of micro-resonator 200 work.
In conjunction with Fig. 4, the utility model microresonator temperature control system does not adopt the temperature sensor measurement temperature, but utilize micro-resonator Q value to have the intrinsic propesties of temperature coefficient, will reflect the temperature input signal 410 of the temperature variant voltage effective value signal 312 of Q value in the micro-resonator driving circuit 300 as temperature-control circuit.Temperature-control circuit is measured temperature input signal 410, it carries out calculation process by comparison operation circuit 402 and temperature setting voltage 403, and the signal after the calculation process amplifies back output temperature control signal 411 through temperature executive component driving circuit 404 again and arrives temperature executive component 500.Described temperature-control circuit 400 comprises the temperature setting voltage 403 that links to each other successively, comparison operation circuit 402 and temperature executive component driving circuit 404, the first temperature executive component 500a and the second temperature executive component 500b are exported in 312 conversions of voltage effective value signal in the micro-resonator driving circuit 200 of reflection temperature value, the comparison operation circuit 402 of temperature-control circuit 400 is connected to the output terminal of true rms circuit 302, get voltage effective value signal 312 in the micro-resonator driving circuit 200 as the temperature control input signals 410 of temperature-control circuit 400, temperature control input signals 410 inputs to comparison operation circuit 402 with temperature setting voltage value circuit 403, amplify back output temperature control signal 411 to the first temperature executive component 500a and the second temperature executive component 500b through temperature executive component driving circuit 404 again after this comparison operation circuit 402 is handled, the design temperature of micro-resonator 200 is by change temperature setting voltage 403 free adjustment.
In conjunction with Fig. 5, the temperature executive component 500 of the utility model microresonator temperature control system is made of the first temperature executive component 500a and the second temperature executive component 500b, the described first temperature executive component 500a is distributed in the upside of micro-resonator 200, the second temperature executive component 500b is distributed in the downside of micro-resonator 200, two temperature executive components are symmetrically distributed in the both sides up and down of micro-resonator 200, the first temperature executive component 500a and the second temperature executive component 500b form by heater strip, the first resistance wire 501a of the first temperature executive component 500a is suspended by temperature executive component upside first anchor point 502a and the temperature executive component upside second anchor point 502b and is fixed on the monocrystal silicon substrate 210, the second resistance wire 501b of the second temperature executive component 500b is suspended by temperature executive component downside first anchor point 502c and the temperature executive component downside second anchor point 502d and is fixed on the monocrystal silicon substrate 210, the temperature executive component upside first electrode 503a of processing on monocrystal silicon substrate, the temperature executive component upside second electrode 503b, the temperature executive component downside first electrode 503c, the temperature executive component downside second electrode 503d is corresponding respectively is connected to the temperature executive component top first anchor point 502a, the temperature executive component top second anchor point 502b, the following first anchor point 502c of temperature executive component, the following second anchor point 502d of temperature executive component, the temperature control signals 411 that temperature-control circuit 400 produces is applied to the temperature executive component upside first electrode 503a and the temperature executive component upside second electrode 503b two ends and temperature executive component downside first electrode 503c and the temperature executive component downside second electrode 503d two ends simultaneously.
Claims (4)
1. microresonator temperature control system, it is characterized in that by micro-resonator (200), micro-resonator driving circuit (300), temperature-control circuit (400), temperature executive component (500) constitutes micro-resonator temperature control closed loop, wherein micro-resonator driving circuit (300) constitutes micro-resonator driving closed loop with micro-resonator (200), described micro-resonator driving circuit (300) drives micro-resonator (200) makes its steady operation at natural frequency point place, the micro-resonator of micro-resonator driving circuit (300) output drives AC signal (313) for driving the AC signal of micro-resonator work, the dc offset voltage (314) of micro-resonator driving circuit (300) output is for driving the dc offset voltage signal of micro-resonator (200) work, thereby micro-resonator driving circuit (300) drives micro-resonator (200) self-sustained oscillation, stable output micro-resonator vibration sensing sensed current signal (310), this micro-resonator vibration sensing sensed current signal (310) is the input signal of micro-resonator driving circuit (300) simultaneously, the Q value of micro-resonator (200) has temperature coefficient and causes the voltage effective value signal (312) in the micro-resonator driving circuit (300) to vary with temperature, temperature-control circuit (400) takes out voltage effective value signal (312) and carries out computing amplification rear drive temperature executive component (500) work, make the temperature of micro-resonator (200) keep constant, temperature executive component (500) is made of the first temperature executive component (500a) and the second temperature executive component (500b), be symmetrically distributed in up and down micro-resonator (200) both sides and with the integrated processing of micro-resonator (200) on same silicon chip.
2. microresonator temperature control system according to claim 1, it is characterized in that: the concrete structure of system is with micro-resonator (200), micro-resonator driving circuit (300), temperature-control circuit (400), temperature executive component (500) is integrated as follows: described micro-resonator (200) is for being produced on the pectination micro-resonator structure on the monocrystalline silicon, on monocrystal silicon substrate (210), process signal lead, pectination micro-resonator structure is by the fixing tuning fork (202) of both-end, the left side drives linear comb broach (203a), the right drives linear comb broach (203b), the left side first responsive linear comb broach (204a), the left side second responsive linear comb broach (204b), the right first responsive linear comb broach (204c) and the right second responsive linear comb broach (204d) are formed, wherein both-end fixedly tuning fork (202) suspend by last anchor point (201a) and following anchor point (201b) and be fixed on the monocrystal silicon substrate (210), the left side drives linear comb broach (203a) and the right driving linear comb broach (203b) is anchored on the monocrystal silicon substrate (210) for driving comb, the left side first responsive linear comb broach (204a), the left side second responsive linear comb broach (204b), the right first responsive linear comb broach (204c), the right second responsive linear comb broach (204d) is anchored on respectively on the monocrystal silicon substrate (210) for detection comb, processing is at the left side drive electrode (205a) on the monocrystal silicon substrate (210) and left side driving linear comb broach (203a) is connected and on the left side drives the alternating voltage that applies direct current biasing on the linear comb broach (203a), processing drives on the right drive electrode (205b) on the monocrystal silicon substrate (210) and the right that the linear comb broach connects and applies the alternating voltage of identical direct current biasing on the right on the linear comb broach (203b), the left side first responsive linear comb broach (204a) and the left side second responsive linear comb broach (204b) are connected to the left side sensitive electrode (205c) of processing on monocrystal silicon substrate (210), and the right first responsive linear comb broach (204c) and the right second responsive linear comb broach (204d) are connected to the right sensitive electrode (205d) of processing on monocrystal silicon substrate (210);
Described micro-resonator driving circuit (300) is by transreactance amplifier (301), true rms circuit (302), gain control circuit (303), dc bias circuit (304) is formed, wherein the left side sensitive electrode (205c) of micro-resonator (200) and the right sensitive electrode (205d) are connected to the input end of transreactance amplifier (301), the output terminal of gain control circuit (303) is connected to left side drive electrode (205a) and the right drive electrode (205b), transreactance amplifier (301) is converted into transreactance amplifier output voltage signal (311) with the micro-resonator vibration sensing sensed current signal (310) of left side sensitive electrode (205c) and the right sensitive electrode (205d) output, transreactance amplifier output voltage signal (311) one tunnel detects the signal input end of conversion back output voltage effective value signal (312) to gain control circuit (303) through true rms circuit (302), another road of transreactance amplifier output voltage signal (311) inputs to the controlled signal input end of gain control circuit (303), gain control circuit (303) is the enlargement factor output micro-resonator driving AC signal (313) that control signal is regulated transreactance amplifier output voltage signal (311) with voltage effective value signal (312), it is the input exchange signal of left side drive electrode (205a) and the right drive electrode (205b) that micro-resonator drives AC signal (313), dc bias circuit (304) on the left side drive electrode (205a), the right drive electrode (205b), left side sensitive electrode (205c), the right sensitive electrode (205d) applies the required dc offset voltage (314) of micro-resonator (200) work;
Described temperature-control circuit (400) comprises the temperature setting voltage (403) that links to each other successively, comparison operation circuit (402) and temperature executive component driving circuit (404), the first temperature executive component (500a) and the second temperature executive component (500b) are exported in the conversion of voltage effective value signal (312) in the micro-resonator driving circuit (200) of reflection temperature value, the comparison operation circuit (402) of temperature-control circuit (400) is connected to the output terminal of true rms circuit (302), get voltage effective value signal (312) in the micro-resonator driving circuit (200) as the temperature control input signals (410) of temperature-control circuit (400), temperature control input signals (410) inputs to comparison operation circuit (402) with temperature setting voltage value circuit (403), output temperature control signal (411) was to the first temperature executive component (500a) and the second temperature executive component (500b) after temperature executive component driving circuit (404) amplifies again after this comparison operation circuit (402) was handled, and the design temperature of micro-resonator (200) is by changing temperature setting voltage (403) free adjustment;
Described temperature executive component (500) is made of the first temperature executive component (500a) and the second temperature executive component (500b), the described first temperature executive component (500a) is distributed in the upside of micro-resonator (200), the second temperature executive component (500b) is distributed in the downside of micro-resonator (200), two temperature executive components are symmetrically distributed in the both sides up and down of micro-resonator (200), the first temperature executive component (500a) and the second temperature executive component (500b) are formed by heater strip, first resistance wire (501a) of the first temperature executive component (500a) is suspended by temperature executive component upside first anchor point (502a) and temperature executive component upside second anchor point (502b) and is fixed on the monocrystal silicon substrate (210), second resistance wire (501b) of the second temperature executive component (500b) is suspended by temperature executive component downside first anchor point (502c) and temperature executive component downside second anchor point (502d) and is fixed on the monocrystal silicon substrate (210), temperature executive component upside first electrode (503a) of processing on monocrystal silicon substrate, temperature executive component upside second electrode (503b), temperature executive component downside first electrode (503c), temperature executive component downside second electrode (503d) is corresponding respectively is connected to temperature executive component top first anchor point (502a), temperature executive component top second anchor point (502b), following first anchor point (502c) of temperature executive component, following second anchor point (502d) of temperature executive component, the temperature control signals (411) that temperature-control circuit (400) produces are applied to temperature executive component upside first electrode (503a) and temperature executive component upside second electrode (503b) two ends and temperature executive component downside first electrode (503c) and temperature executive component downside second electrode (503d) two ends simultaneously.
3. microresonator temperature control system according to claim 1 is characterized in that: the material of micro-resonator (200) structure and temperature executive component (500) structure is monocrystalline silicon and adopts integrated processing technology to make micro-resonator (200), micro-resonator driving circuit (300), temperature-control circuit (400) and temperature executive component (500) processing on same silicon single crystal wafer.
4. microresonator temperature control system according to claim 1, it is characterized in that: the microresonator temperature control system of processing on same silicon chip is installed in the shell (601) after adopting wafer-level packaging technology Vacuum Package, the isolated ambient temperature of filling heat insulator (602) between the microresonator temperature control system wafer (220) of Vacuum Package and the shell.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104734644A (en) * | 2013-12-23 | 2015-06-24 | 亚德诺半导体集团 | Temperature Stabilized Circuitry |
| CN107895833A (en) * | 2017-11-13 | 2018-04-10 | 戴承萍 | Microresonator temperature control system |
| CN108011596A (en) * | 2017-12-28 | 2018-05-08 | 合肥安聚仪电科技有限公司 | The preposition amplification of photodiode and temperature control equipment and its system |
| RU2789223C1 (en) * | 2022-09-20 | 2023-01-31 | Даниль Олегович Даниленко | Resonator temperature control system |
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2010
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104734644A (en) * | 2013-12-23 | 2015-06-24 | 亚德诺半导体集团 | Temperature Stabilized Circuitry |
| CN104734644B (en) * | 2013-12-23 | 2018-11-09 | 亚德诺半导体集团 | Temperature stabilization circuit |
| CN107895833A (en) * | 2017-11-13 | 2018-04-10 | 戴承萍 | Microresonator temperature control system |
| CN108011596A (en) * | 2017-12-28 | 2018-05-08 | 合肥安聚仪电科技有限公司 | The preposition amplification of photodiode and temperature control equipment and its system |
| RU2789223C1 (en) * | 2022-09-20 | 2023-01-31 | Даниль Олегович Даниленко | Resonator temperature control system |
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