CN201586562U - 微米、纳米级α-三氧化二铝、α-碳化硅分级生产装置 - Google Patents
微米、纳米级α-三氧化二铝、α-碳化硅分级生产装置 Download PDFInfo
- Publication number
- CN201586562U CN201586562U CN2009202587537U CN200920258753U CN201586562U CN 201586562 U CN201586562 U CN 201586562U CN 2009202587537 U CN2009202587537 U CN 2009202587537U CN 200920258753 U CN200920258753 U CN 200920258753U CN 201586562 U CN201586562 U CN 201586562U
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- CN
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- Prior art keywords
- alpha
- silicon carbide
- grade
- nano
- nanometer
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 229910021431 alpha silicon carbide Inorganic materials 0.000 title claims abstract description 25
- 238000004519 manufacturing process Methods 0.000 title abstract description 17
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 14
- 235000010676 Ocimum basilicum Nutrition 0.000 claims 1
- 240000007926 Ocimum gratissimum Species 0.000 claims 1
- 239000002245 particle Substances 0.000 abstract description 4
- 229910010271 silicon carbide Inorganic materials 0.000 abstract 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract 3
- 238000003756 stirring Methods 0.000 abstract 3
- 230000005540 biological transmission Effects 0.000 abstract 1
- 239000012530 fluid Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000011812 mixed powder Substances 0.000 description 5
- 239000013078 crystal Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005194 fractionation Methods 0.000 description 2
- 230000008676 import Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 230000000087 stabilizing effect Effects 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009514 concussion Effects 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Abstract
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN2009202587537U CN201586562U (zh) | 2009-12-02 | 2009-12-02 | 微米、纳米级α-三氧化二铝、α-碳化硅分级生产装置 |
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CN2009202587537U CN201586562U (zh) | 2009-12-02 | 2009-12-02 | 微米、纳米级α-三氧化二铝、α-碳化硅分级生产装置 |
Publications (1)
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CN201586562U true CN201586562U (zh) | 2010-09-22 |
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CN2009202587537U Expired - Lifetime CN201586562U (zh) | 2009-12-02 | 2009-12-02 | 微米、纳米级α-三氧化二铝、α-碳化硅分级生产装置 |
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CN (1) | CN201586562U (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106076595A (zh) * | 2016-06-09 | 2016-11-09 | 大连海事大学 | 一种纳米碳化硅的制备方法 |
-
2009
- 2009-12-02 CN CN2009202587537U patent/CN201586562U/zh not_active Expired - Lifetime
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106076595A (zh) * | 2016-06-09 | 2016-11-09 | 大连海事大学 | 一种纳米碳化硅的制备方法 |
CN106076595B (zh) * | 2016-06-09 | 2018-02-13 | 大连海事大学 | 一种纳米碳化硅的制备方法 |
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Legal Events
Date | Code | Title | Description |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
EE01 | Entry into force of recordation of patent licensing contract |
Assignee: Zhengzhou Shuguang piezoelectric Technology Co., Ltd. Assignor: Cai Yucheng Contract record no.: 2011410000025 Denomination of utility model: Nanometer, nano-grade alpha-aluminum oxide and alpha-silicon carbide grading production device Granted publication date: 20100922 License type: Exclusive License Record date: 20110401 |
|
ASS | Succession or assignment of patent right |
Owner name: ZHENGZHOU SHUGUANG PIEZOELECTRIC TECHNOLOGY CO., L Free format text: FORMER OWNER: CAI YUCHENG Effective date: 20140623 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20140623 Address after: 450065 pharmaceutical street, hi tech Development Zone, Zhengzhou, Henan Patentee after: Zhengzhou Shuguang piezoelectric Technology Co., Ltd. Address before: 450065 pharmaceutical street, hi tech Development Zone, Zhengzhou, Henan Patentee before: Cai Yucheng |
|
CX01 | Expiry of patent term | ||
CX01 | Expiry of patent term |
Granted publication date: 20100922 |