CN201514957U - LED with warm white light - Google Patents

LED with warm white light Download PDF

Info

Publication number
CN201514957U
CN201514957U CN2009202356227U CN200920235622U CN201514957U CN 201514957 U CN201514957 U CN 201514957U CN 2009202356227 U CN2009202356227 U CN 2009202356227U CN 200920235622 U CN200920235622 U CN 200920235622U CN 201514957 U CN201514957 U CN 201514957U
Authority
CN
China
Prior art keywords
fluorescent powder
warm white
led
blue wafer
blue
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2009202356227U
Other languages
Chinese (zh)
Inventor
胡建红
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Joint Venture Jiangsu Wenrun Optoelectronics Co Ltd
Original Assignee
Joint Venture Jiangsu Wenrun Optoelectronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Joint Venture Jiangsu Wenrun Optoelectronics Co Ltd filed Critical Joint Venture Jiangsu Wenrun Optoelectronics Co Ltd
Priority to CN2009202356227U priority Critical patent/CN201514957U/en
Application granted granted Critical
Publication of CN201514957U publication Critical patent/CN201514957U/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Led Device Packages (AREA)

Abstract

The utility model discloses an LED with warm white light, comprising a base, a blue wafer and a gold thread, wherein the blue wafer is fixed at the bottom of the base by solid crystal bonding glue; the two ends of the gold thread are respectively and fixedly connected with the blue wafer and the base; the outer surface of the blue wafer is covered with a green fluorescent powder layer, and a red fluorescent powder layer is covered above the green fluorescent powder layer; and the upper surface of the red fluorescent powder layer is parallel and level to the top surface of the base. The LED has simple structure, good consistency in quantization production and simple operation technique. The LED avoids directly using blue light with low energy to excite red fluorescent powder, and greatly improves the conversion efficiency of the red fluorescent powder, thus ensuring the light emission efficiency of the LED with warm white light to reach more than 90% of yellow fluorescent powder, and reducing the using cost. In addition, as different fluorescent powders are selected for use, the light emission efficiency is maintained, and the color temperature and the color rendering index can be conveniently adjusted.

Description

A kind of warm white LED
Technical field
The utility model relates to a kind of warm white LED, and especially a kind of warm white LED of high light-emitting efficiency belongs to field of photoelectric technology.
Background technology
The LED light-emitting diode is a kind of solid-state semiconductor device, and it can directly be converted into light to electricity.Existing warm white LED comprises pedestal, blue wafer, gold thread, blue wafer is fixed in the pedestal, gold thread is fixedlyed connected with pedestal with blue wafer respectively, outer surface at blue wafer is coated with the layer of fluorescent powder layer, this phosphor powder layer is the mixture of yellow fluorescent powder and red fluorescence powder, uses epoxy glue encapsulation base periphery again.The blue light that the blue wafer of this kind warm white LED utilization sends, excitated fluorescent powder sends gold-tinted and ruddiness, is mixed into the warm white of low colour temperature again.Because increased red composition in the white light, and the red fluorescence powder conversion efficiency is low, light extraction efficiency causes the overall light extraction efficiency of this kind warm white LED to reduce by 40~50% well below traditional yellow fluorescent powder.
The utility model content
At the deficiencies in the prior art, the purpose of this utility model provides a kind of warm white LED of simple in structure, high light-emitting efficiency.
The utility model is achieved by the following technical programs:
A kind of warm white LED, comprise pedestal, blue wafer, gold thread, described blue wafer is fixed on the bottom of pedestal by solid brilliant adhesive glue, fixedly connected with described blue wafer, pedestal respectively in the two ends of described gold thread, the outer surface of described blue wafer is coated with one deck green phosphor layer, the top of described green phosphor layer is covered with one deck red fluorescence bisque, and the upper surface of described red fluorescence bisque is concordant with the end face of described pedestal.
The purpose of this utility model can also further realize by following technical measures.
Aforesaid a kind of warm white LED, the thickness of wherein said green phosphor layer is greater than the thickness of described red fluorescence bisque.
Aforesaid a kind of warm white LED, the excitation wavelength of wherein said blue wafer are 440~450nm.
Aforesaid a kind of warm white LED, wherein said green emitting phosphor are silicate, and its excitation wavelength is 500~510nm.
Aforesaid a kind of warm white LED, wherein said red fluorescence powder are nitride, and its excitation wavelength is 600~660nm.
The utility model is simple in structure, the two-layer phosphor powder layer of coating above blue wafer, under blue-light excited, ground floor fluorescent material sends green glow, become high-octane white light with blue light, excite the low-energy red fluorescence powder of the second layer to send ruddiness by high-octane white light again, owing to avoided directly coming excitated red fluorescent powder by low-energy blue light, promoted the conversion efficiency of red fluorescence powder greatly, make the light extraction efficiency of warm white LED bring up to more than 90% of yellow fluorescent powder, reduced use cost.In addition, select different fluorescent material for use, when keeping high light-emitting efficiency, convenient colour temperature and the color rendering index regulated.The utility model mass production high conformity, operating procedure is simple.
Advantage of the present utility model and characteristics will illustrate by the non-limitative illustration of following preferred embodiment and explain that these embodiment only provide as an example with reference to accompanying drawing.
Description of drawings
Fig. 1 is a structural representation of the present utility model;
Embodiment
The utility model is described in further detail below in conjunction with drawings and Examples.
As shown in Figure 1, the utility model comprises pedestal 1, blue wafer 2, two gold threads 3, and the excitation wavelength of blue wafer 2 is 440~450nm, is fixed on the bottom of pedestal 1 by solid brilliant adhesive glue 4, the two ends of two gold threads 3 are fixed with blue wafer 2, pedestal 1 welding respectively, make its mutual conduction; The outer surface of blue wafer 2 is coated with one deck green phosphor layer 5, green phosphor layer 5 sticks with glue agent and green emitting phosphor mixing oven dry is made, wherein adhesive can be epoxy resin, silica gel, or the mixture of the two, the utility model adopts silica gel, green emitting phosphor is a silicate, and its excitation wavelength is 500~510nm; The top of green phosphor layer 5 is covered with one deck red fluorescence bisque 6, the upper surface of red fluorescence bisque 6 is concordant with the end face of pedestal 1, the adhesive that red fluorescence bisque 6 usefulness are identical be silica gel mix with red fluorescence powder the oven dry make, red fluorescence powder is a nitride, and its excitation wavelength is 600~660nm; The thickness of green phosphor layer 5 helps improving the light extraction efficiency of warm white LED more greater than the thickness of red fluorescence bisque 6.
Manufacture method of the present utility model is: blue wafer 2 is fixed in the pedestal 1, welds line; , blue wafer 2 should be sealed fully during coating earlier at the outer surface coating green phosphor layer 5 of blue wafer 2, baking-curing then, baking temperature is 120 ℃~150 ℃, drying time is 1~2 hour; Upper surface at green phosphor layer 5 applies red fluorescence bisque 6 again, baking-curing, and baking condition is with for the first time identical; Use the periphery of epoxy resin colloid encapsulation base 1 at last.
In addition to the implementation, the utility model can also have other execution modes, and all employings are equal to the technical scheme of replacement or equivalent transformation formation, all drop in the protection range of the utility model requirement.

Claims (5)

1. warm white LED, comprise pedestal, blue wafer, gold thread, described blue wafer is fixed on the bottom of pedestal by solid brilliant adhesive glue, fixedly connected with described blue wafer, pedestal respectively in the two ends of described gold thread, it is characterized in that: the outer surface of described blue wafer is coated with one deck green phosphor layer, the top of described green phosphor layer is covered with one deck red fluorescence bisque, and the upper surface of described red fluorescence bisque is concordant with the end face of described pedestal.
2. a kind of warm white LED as claimed in claim 1 is characterized in that: the thickness of described green phosphor layer is greater than the thickness of described red fluorescence bisque.
3. a kind of warm white LED as claimed in claim 1 is characterized in that: the excitation wavelength of described blue wafer is 440~450nm.
4. a kind of warm white LED as claimed in claim 1 is characterized in that: described green emitting phosphor is a silicate, and its excitation wavelength is 500~510nm.
5. a kind of warm white LED as claimed in claim 1 is characterized in that: described red fluorescence powder is a nitride, and its excitation wavelength is 600~660nm.
CN2009202356227U 2009-10-16 2009-10-16 LED with warm white light Expired - Fee Related CN201514957U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2009202356227U CN201514957U (en) 2009-10-16 2009-10-16 LED with warm white light

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2009202356227U CN201514957U (en) 2009-10-16 2009-10-16 LED with warm white light

Publications (1)

Publication Number Publication Date
CN201514957U true CN201514957U (en) 2010-06-23

Family

ID=42486368

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2009202356227U Expired - Fee Related CN201514957U (en) 2009-10-16 2009-10-16 LED with warm white light

Country Status (1)

Country Link
CN (1) CN201514957U (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101937963A (en) * 2010-08-19 2011-01-05 深圳市洲明科技股份有限公司 LED light emitting unit and encapsulation method thereof
CN102231418A (en) * 2011-06-27 2011-11-02 中外合资江苏稳润光电有限公司 Method for manufacturing white-light LED (Light Emitting Diode) with high color rendering index
CN102569542A (en) * 2010-12-30 2012-07-11 中山市世耀光电科技有限公司 Packaging process for light emitting diode (LED) light source
CN103178165A (en) * 2011-12-21 2013-06-26 展晶科技(深圳)有限公司 Light-emitting diode and manufacture method thereof
CN103325930A (en) * 2013-06-13 2013-09-25 苏州金科信汇光电科技有限公司 Fluorescent LED
CN107706284A (en) * 2017-09-12 2018-02-16 厦门多彩光电子科技有限公司 A kind of LED encapsulation method and encapsulating structure
CN109713112A (en) * 2017-10-26 2019-05-03 深圳市聚飞光电股份有限公司 White-light LED chip, lamp bead and White-light LED chip, lamp bead preparation method

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101937963A (en) * 2010-08-19 2011-01-05 深圳市洲明科技股份有限公司 LED light emitting unit and encapsulation method thereof
CN102569542A (en) * 2010-12-30 2012-07-11 中山市世耀光电科技有限公司 Packaging process for light emitting diode (LED) light source
CN102231418A (en) * 2011-06-27 2011-11-02 中外合资江苏稳润光电有限公司 Method for manufacturing white-light LED (Light Emitting Diode) with high color rendering index
CN103178165A (en) * 2011-12-21 2013-06-26 展晶科技(深圳)有限公司 Light-emitting diode and manufacture method thereof
CN103178165B (en) * 2011-12-21 2015-10-07 展晶科技(深圳)有限公司 Light-emitting Diode And Its Making Method
CN103325930A (en) * 2013-06-13 2013-09-25 苏州金科信汇光电科技有限公司 Fluorescent LED
CN107706284A (en) * 2017-09-12 2018-02-16 厦门多彩光电子科技有限公司 A kind of LED encapsulation method and encapsulating structure
CN109713112A (en) * 2017-10-26 2019-05-03 深圳市聚飞光电股份有限公司 White-light LED chip, lamp bead and White-light LED chip, lamp bead preparation method

Similar Documents

Publication Publication Date Title
CN201514957U (en) LED with warm white light
CN106479500B (en) A kind of luminescent glass ceramic and its preparation method and the application in LED illumination device
CN101872825B (en) Novel method for preparing high-power white LED with low color temperature and high color rendering property
CN105810674A (en) Light emitting diode (LED) luminous device and backlight module employing same
CN100565000C (en) Utilize the YAG crystalline ceramics to prepare the method for white light LEDs
CN102800794A (en) Optical wavelength conversion device and application thereof in white light emitting device
CN110660892B (en) Optical device
CN104993035B (en) A kind of warm white LED light-emitting device
CN205900540U (en) LED luminescent device and backlight unit who uses this LED luminescent device
CN102231418A (en) Method for manufacturing white-light LED (Light Emitting Diode) with high color rendering index
CN102516999B (en) Warm white mixed fluorescent material with color rendering index of more than 90 and preparation method thereof
CN103855288A (en) Light emitting component and light emitting device composed of light emitting component
CN103333687B (en) Inorganic photoluminescent material and preparation method thereof
CN207217581U (en) A kind of LED component of multilayer encapsulation
CN103361054A (en) Synthesis method of red nitride fluorescent powder and LED (light-emitting diode) plant growth lamp
CN202423386U (en) Light emitting diode packaging structure
CN201331013Y (en) Novel low-cost green LED
CN202474015U (en) LED package structure using transparent ceramic doped with rare-earth element as base
CN203787466U (en) LED (light emitting diode) packaging structure
CN103137834A (en) Light-emitting diode (LED) lamp
CN206040693U (en) Blue light emitting diode wafer white light packaging hardware
CN202394970U (en) Light-emitting diode (LED) chip and light source module using same
CN201568811U (en) White light LED backlight
CN202111090U (en) Warm white LED with high color rendering index
CN201383502Y (en) white light emitting diode

Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20100623

Termination date: 20121016