CN201502997U - High-efficiency heat dissipation aluminum substrate for LED illumination and LED light source - Google Patents
High-efficiency heat dissipation aluminum substrate for LED illumination and LED light source Download PDFInfo
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- CN201502997U CN201502997U CN2009202054759U CN200920205475U CN201502997U CN 201502997 U CN201502997 U CN 201502997U CN 2009202054759 U CN2009202054759 U CN 2009202054759U CN 200920205475 U CN200920205475 U CN 200920205475U CN 201502997 U CN201502997 U CN 201502997U
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Abstract
The utility model discloses a high-efficiency heat dissipation aluminum substrate for LED illumination with low cost, simple process and good heat dissipation effect, and an LED light source. The LED light source comprises LED chips (5), and the high-efficiency heat dissipation aluminum substrate. The high-efficiency heat dissipation aluminum substrate comprises an aluminum bottom plate (1), wherein aluminum oxide thermally-conductive insulation layers (2) are attached to the upper surface and the lower surface of the aluminum bottom plate (1), a conductive metal layer (3) formed by depositing an aluminum layer on the aluminum oxide thermally-conductive insulation layer (2) on the upper surface of the aluminum bottom plate (1), an LED chip base (31) and circuit connection wires (32) are formed by etching the conductive metal layer (3), and an anti-solder layer (4) covers the parts of the conductive metal layer (3) except the welding spots, the chip positions and the pre-reserved wire bonding positions. The LED chips (5) are bonded and fixed on the LED chip base (31) and are connected in series through the circuit connection wires (32) to form the LED illumination circuit. In addition, silica gel or resin is applied on or around the LED chips (5) to form a protection layer (6).
Description
Technical field
The led light source that the utility model relates to a kind of LED lighting high-efficiency heat-radiating aluminum plate and comprises this LED lighting high-efficiency heat-radiating aluminum plate.
Background technology
A plurality of led chips are integrated on the wiring board are called integrated chip, the LED integrated chip is applied in the LED lighting source just more and more widely.Commonly used in the LED integrated chip to aluminium base, existing LED illumination aluminium base generally with aluminum soleplate as substrate, coated with resins class material covers Copper Foil as conductive layer again as insulating barrier on insulating barrier on substrate.Because its insulating barrier can be high pressure resistant (＞1500V/min) and the substrate thermal diffusivity preferable, so be widely used in the led light source field.Its application mode is according to the manufacture of conventional monolayers printed substrate Copper Foil to be formed circuit with serigraphy and etching mode on aluminum soleplate, welding resisting layer is covered on the aluminum soleplate again, only exposes the Copper Foil that needs the welding position.The aluminium base that this employing traditional approach is made, because it uses craft precision relatively poor, be difficult to accurately control the thickness of heat conductive insulating layer, in order to guarantee its withstand voltage properties, must leave big surplus to the thickness of insulating barrier, the thickness of general insulating barrier is at 80～100 μ m, so the thickness of insulating barrier is bigger, and the thermal conductivity factor of resin is less, so its heat conduction and radiating effect reduce greatly.
The utility model content
Technical problem to be solved in the utility model is to overcome the deficiencies in the prior art, provides that a kind of cost is low, technology is simple, the LED lighting high-efficiency heat-radiating aluminum plate of good heat dissipation effect.
In addition, the utility model also provides a kind of led light source that comprises described LED lighting high-efficiency heat-radiating aluminum plate.
The technical scheme that LED lighting high-efficiency heat-radiating aluminum plate of the present utility model is adopted is: LED lighting high-efficiency heat-radiating aluminum plate of the present utility model comprises aluminum soleplate, the upper and lower surface of described aluminum soleplate all is attached with one deck aluminium oxide heat conductive insulating layer, deposit aluminium lamination on the described aluminium oxide heat conductive insulating layer that the upper surface of described aluminum soleplate adheres to and form conductive metal layer, form the base and the forming circuit line of led chip after the described conductive metal layer etching, the remainder on the described conductive metal layer except that solder joint, chip and routing reserved location is covered with welding resisting layer.
Between described aluminium oxide heat conductive insulating layer and described conductive metal layer, be provided with high value polysilicon barrier layer.
The thickness on described high value polysilicon barrier layer is 0.1～5 μ m.
The thickness of described aluminium oxide heat conductive insulating layer is 0.1～50 μ m.
The aluminum layer thickness that deposits on the described aluminium oxide heat conductive insulating layer is 2～5 μ m.
The technical scheme that led light source of the present utility model adopted is: led light source of the present utility model comprises several led chips; LED lighting high-efficiency heat-radiating aluminum plate; described LED lighting high-efficiency heat-radiating aluminum plate comprises aluminum soleplate; on the described aluminum soleplate; lower surface all is attached with one deck aluminium oxide heat conductive insulating layer; deposit aluminium lamination on the described aluminium oxide heat conductive insulating layer that the upper surface of described aluminum soleplate adheres to and form conductive metal layer; form the base and the forming circuit line of led chip after the described conductive metal layer etching; remove solder joint on the described conductive metal layer; the outer remainder of chip and routing reserved location is covered with welding resisting layer; several described led chips are bonded and fixed at the LED lighting circuit that also concerns by the connection in series-parallel of described circuit connection formation on the base of described led chip; on described led chip and relevant position on every side cover silica gel or the resin contain or do not contain fluorescent material, form protective layer.
Between described aluminium oxide heat conductive insulating layer and described conductive metal layer, be provided with high value polysilicon barrier layer.
The thickness on described high value polysilicon barrier layer is 0.1～5 μ m.
The thickness of described aluminium oxide heat conductive insulating layer is 0.1～50 μ m.
The aluminum layer thickness that deposits on the described aluminium oxide heat conductive insulating layer is 2～5 μ m.
Described led chip is a high-power LED chip.
Described led chip is divided into some groups, reaches between some groups of described led chips between the described led chip of each group inside all to be connected by described circuit connection.
Mutual serial or parallel connection or connection in series-parallel are connected between the described led chip of each group inside.
Mutual serial or parallel connection or connection in series-parallel are connected between the some groups of described led chips.
The beneficial effects of the utility model are: because led light source of the present utility model comprises several led chips; LED lighting high-efficiency heat-radiating aluminum plate; described LED lighting high-efficiency heat-radiating aluminum plate comprises aluminum soleplate; on the described aluminum soleplate; lower surface all is attached with one deck aluminium oxide heat conductive insulating layer; deposit aluminium lamination on the described aluminium oxide heat conductive insulating layer that the upper surface of described aluminum soleplate adheres to or be covered with Copper Foil and form conductive metal layer; form the base and the forming circuit line of led chip after the described conductive metal layer etching; remove solder joint on the described conductive metal layer; the outer remainder of chip and routing reserved location is covered with welding resisting layer; several described led chips are bonded and fixed at the LED lighting circuit that also concerns by the connection in series-parallel of described circuit connection formation on the base of described led chip; on described led chip and relevant position on every side cover silica gel or the resin contain or do not contain fluorescent material; form protective layer; the manufacturing process of the utility model by electrochemistry and integrated circuit is on described aluminum soleplate; lower surface adheres to aluminium oxide heat conductive insulating layer and conductive metal layer; make the thickness of aluminium oxide heat conductive insulating layer accurately to control; satisfying under the high voltage bearing situation; can reduce the thickness of heat conductive insulating layer as far as possible; the thickness of aluminium oxide heat conductive insulating layer of the present utility model can be within 10 μ m; it only is the part of the thickness of insulating layer that forms of the manufacture method of conventional monolayers wiring board; even 1/tens; the thermal conductivity factor height of described aluminium oxide heat conductive insulating layer of while; make the heat conductivility excellence of the utility model aluminium oxide heat conductive insulating layer; overall thermal resistance be the conventional aluminum substrate thermal resistance 1/80～1/200; therefore thermal conductivity improves greatly; can reduce the size of heat-radiating substrate; help the miniaturization of light source; simultaneously for led chip and light source substrate are integrated in one as one independently light source good basis is provided; only by once encapsulating the connection in series-parallel syntagmatic that just can realize between the led chip; directly being connected to drive circuit just can luminous work; simplified processing step; saved semi-conducting material; saved cost; make production efficiency significantly improve; because heat conduction and heat radiation performance of the present utility model is good; therefore can prolong the service life of the led chip of light source, so the utility model cost is low; technology is simple; good heat dissipation effect.
Description of drawings
Fig. 1 is the local section structural representation of the led light source of the utility model embodiment one;
Fig. 2 is the pictorial diagram of the conductive metal layer of led light source shown in Figure 1;
Fig. 3 is the section structure schematic diagram of step (a) process in the manufacture method of led light source of the utility model embodiment;
Fig. 4 is the section structure schematic diagram of step (b) process in the manufacture method of led light source of the utility model embodiment;
Fig. 5, Fig. 6 are the section structure schematic diagrames of step (c) process in the manufacture method of led light source of the utility model embodiment;
Fig. 7 is the section structure schematic diagram of step (e) process in the manufacture method of led light source of the utility model embodiment;
Fig. 8 is the section structure schematic diagram of step (f) process in the manufacture method of led light source of the utility model embodiment;
Fig. 9 is the local section structural representation of the led light source of the utility model embodiment two;
Figure 10 is the section structure schematic diagram of step (b1) process in the manufacture method of led light source of the utility model embodiment two.
The specific embodiment
Embodiment one:
As Fig. 1, shown in Figure 2, in the present embodiment, LED lighting high-efficiency heat-radiating aluminum plate comprises aluminum soleplate 1, on the described aluminum soleplate 1, lower surface all is attached with one deck aluminium oxide heat conductive insulating layer 2, deposit aluminium lamination on the described aluminium oxide heat conductive insulating layer 2 that the upper surface of described aluminum soleplate 1 adheres to and form conductive metal layer 3, the thickness of described aluminium oxide heat conductive insulating layer 2 is 5 μ m, its scope can change in 0.1～50 μ m, the aluminum layer thickness of deposition is 2～5 μ m on the described aluminium oxide heat conductive insulating layer 2, the thickness of described aluminium oxide heat conductive insulating layer 2 is big more, withstand voltage is also big more, form the base 31 and the forming circuit line 32 of led chip after described conductive metal layer 3 etchings, remove solder joint on the described conductive metal layer 3, the outer remainder of chip and routing reserved location is covered with welding resisting layer 4, to avoid short circuit and mistake weldering between the different described conductive metal layer 3, can also prevent to get an electric shock the opening of the described welding resisting layer 4 of the box indicating among Fig. 2 shown in 41.
As Fig. 1; shown in Figure 2; in the present embodiment; led light source is except that comprising above-mentioned LED lighting high-efficiency heat-radiating aluminum plate; also comprise several led chips 5; several described led chips 5 are bonded and fixed at the LED lighting circuit that also concerns by described circuit connection 32 formation connection in series-parallel on the base 31 of described led chip; on described led chip 5 and relevant position on every side cover silica gel or the resin contain fluorescent material; can according to circumstances not contain fluorescent material yet; form protective layer 6; described protective layer 6 covers described led chip 1 and the metal wire that is used to encapsulate; to prevent that metal wire from fractureing; the influence that can protect simultaneously described led chip 1 not changed by external environment; described led chip 5 is a high-power LED chip; described led chip 5 is divided into some groups; reach between some groups of described led chips 5 between the described led chip 5 of each group inside and all be connected by described circuit connection 32; mutual serial or parallel connection or connection in series-parallel are connected between the described led chip 5 of each group inside; mutual serial or parallel connection or connection in series-parallel are connected between the some groups of described led chips 5; described conductive metal layer 3 is an electrode; electric conductor; be again the heat radiation conductive sheet of led chip, or the refractive body of bottom surface light.
As Fig. 3～shown in Figure 7, the manufacture method of the LED lighting high-efficiency heat-radiating aluminum plate of present embodiment may further comprise the steps:
(a) aluminum soleplate preliminary treatment: described aluminum soleplate 1 is cleaned in the concentrated sulfuric acid, remove the greasy dirt and the impurity on the surface of described aluminum soleplate 1, carry out the surface chemistry polishing with the corrosive liquid that contains phosphoric acid, acetic acid, nitric acid then, clean up with deionized water, the last sectional drawing that forms of this step as shown in Figure 3 again;
(b) form aluminium oxide heat conductive insulating layer: the described aluminum soleplate 1 that will clean up carries out the electrochemistry anode to be handled, make the upper and lower surface of described aluminum soleplate 1 all be attached with the aluminium oxide heat conductive insulating layer 2 that a layer thickness is 0.1～50 μ m, the last sectional drawing that forms of this step as shown in Figure 4;
(c) form conductive metal layer: on the described aluminium oxide heat conductive insulating layer 2 that the upper surface of the described aluminum soleplate of handling through anode 1 adheres to, be 2～5 μ m aluminium laminations, form described conductive metal layer 3, as shown in Figure 5 with sputter mode deposit thickness; On described aluminum soleplate 1, coat photoresist then with described conductive metal layer 3, on litho machine, utilize the metal lithographic mask to carry out photoetching again, form the figure of conductive metal layer through developing again, perhaps, the method for employing serigraphy directly forms the figure of conductive metal layer; Behind baking-curing, with wet etching process described aluminium lamination is carried out etching again, remaining described aluminium lamination forms the base 31 of described led chip and constitutes described circuit connection 32 after the etching, and the last sectional drawing that forms of this step is as shown in Figure 6;
(d) alloying: under 300～450 ℃ of temperature, with the base 31 of the described led chip of above-mentioned formation and the described conductive metal layer 3 that constitutes described circuit connection 32 alloying in addition under the environment of nitrogen or hydrogen;
(e) form welding resisting layer: at the base 31 that forms described led chip and constitute on the described aluminum soleplate 1 of described circuit connection 32 and adopt the method for serigraphy to apply anti-welding material, form the figure of welding resisting layer; The described anti-welding material of baking-curing at high temperature forms described welding resisting layer 4 again, and the last sectional drawing that forms of this step as shown in Figure 7.
As Fig. 1, Fig. 3～shown in Figure 8, the manufacture method of the led light source of present embodiment may further comprise the steps:
(a) aluminum soleplate preliminary treatment: described aluminum soleplate 1 is cleaned in the concentrated sulfuric acid, remove the greasy dirt and the impurity on the surface of described aluminum soleplate (1), carry out the surface chemistry polishing with the corrosive liquid that contains phosphoric acid, acetic acid, nitric acid then, clean up with deionized water, the last sectional drawing that forms of this step as shown in Figure 3 again;
(b) form aluminium oxide heat conductive insulating layer: the described aluminum soleplate 1 that will clean up carries out the electrochemistry anode to be handled, make the upper and lower surface of described aluminum soleplate 1 all be attached with the aluminium oxide heat conductive insulating layer 2 that a layer thickness is 0.1～50 μ m, the last sectional drawing that forms of this step as shown in Figure 4;
(c) form conductive metal layer: on the described aluminium oxide heat conductive insulating layer 2 that the upper surface of the described aluminum soleplate of handling through anode 1 adheres to, be 2～5 μ m aluminium laminations, form described conductive metal layer 3, as shown in Figure 5 with sputter mode deposit thickness; On described aluminum soleplate 1, coat photoresist then with described conductive metal layer 3, on litho machine, utilize the metal lithographic mask to carry out photoetching again, form the figure of conductive metal layer through developing again, perhaps, the method for employing serigraphy directly forms the figure of conductive metal layer; Behind baking-curing, with wet etching process described aluminium lamination is carried out etching again, remaining described aluminium lamination forms the base 31 of described led chip and constitutes described circuit connection 32 after the etching, and the last sectional drawing that forms of this step is as shown in Figure 6;
(d) alloying: under 300～450 ℃ of temperature, with the base 31 of the described led chip of above-mentioned formation and the described conductive metal layer 3 that constitutes described circuit connection 32 alloying in addition under the environment of nitrogen or hydrogen;
(e) form welding resisting layer: at the base 31 that forms described led chip and constitute on the described aluminum soleplate 1 of described circuit connection 32 and adopt the method for serigraphy to apply anti-welding material, form the figure of welding resisting layer; The described anti-welding material of baking-curing at high temperature forms described welding resisting layer 4 again, and the last sectional drawing that forms of this step as shown in Figure 7;
(f) led chip encapsulation: be adhesively fixed on the base 31 of described led chip with several described led chip 5 usefulness ultrasonic bonds or with silver slurry or tin, the electrode contact of described led chip 5 is welded on the described circuit connection 32 by the metal wire routing and encapsulates, and the last sectional drawing that forms of this step as shown in Figure 8;
(g) form protective layer: on described led chip 5 and relevant position on every side cover silica gel or the resin that contains fluorescent material; can according to circumstances not contain fluorescent material yet; through hot setting; form protective layer; described protective layer covers described led chip 5 and the metal wire that is used for routing, and the last sectional drawing that forms of this step as shown in Figure 1.
Embodiment two:
As shown in Figure 9, the difference part of present embodiment and embodiment one is: in the present embodiment, LED lighting high-efficiency heat-radiating aluminum plate and led light source all are provided with high value polysilicon barrier layer 8 between described aluminium oxide heat conductive insulating layer 2 and described conductive metal layer 3, described high value polysilicon barrier layer 8 both can increase the ability of the reactance voltage of described aluminium oxide heat conductive insulating layer 2, more help preventing forming in the process of described conductive metal layer 3 destruction of the described aluminium oxide heat conductive insulating layer 2 under the described conductive metal layer 3, help control described aluminium oxide heat conductive insulating layer 2 at wet etching.
Equally, the manufacture method of LED lighting high-efficiency heat-radiating aluminum plate and led light source also comprises the steps: between described step (b) and described step (c) on the basis of embodiment one
(b1) form the barrier layer: be the high value polysilicon of 0.1～5 μ m with sputter mode deposit thickness on the described aluminium oxide heat conductive insulating layer 2 that the upper surface of the described aluminum soleplate of handling through anode 1 adheres to, described high value polysilicon forms the barrier layer.
All the other features of present embodiment are with embodiment one.
The utility model has been broken through the intrinsic thoughtcast of this area, the manufacturing process of the utility model by electrochemistry and integrated circuit is on described aluminum soleplate 1, lower surface adheres to aluminium oxide heat conductive insulating layer 2 and conductive metal layer 3, make the thickness of aluminium oxide heat conductive insulating layer 2 accurately to control, satisfying under the high voltage bearing situation, can reduce the thickness of heat conductive insulating layer as far as possible, the thickness of aluminium oxide heat conductive insulating layer 2 of the present utility model can be within 10 μ m, it only is the part of the thickness of insulating layer that forms of the manufacture method of conventional monolayers wiring board, even 1/tens, the thermal conductivity factor height of described aluminium oxide heat conductive insulating layer 2 of while, make the heat conductivility excellence of the utility model aluminium oxide heat conductive insulating layer 2, the ensemble average thermal resistance be the conventional aluminum substrate thermal resistance 1/80～1/200, therefore thermal conductivity improves greatly, can reduce the size of heat-radiating substrate, help the miniaturization of light source, simultaneously for led chip 5 and light source substrate are integrated in one as one independently light source good basis is provided, only by once encapsulating the connection in series-parallel syntagmatic that just can realize between the led chip, directly being connected to drive circuit just can luminous work, simplified processing step, saved semi-conducting material, saved cost, make production efficiency significantly improve, because LED lighting high-efficiency heat-radiating aluminum plate heat conduction and heat radiation performance of the present utility model is good, therefore can prolong the service life of led chip in the light source, so the utility model cost is low, technology is simple, good heat dissipation effect; Led light source of the present utility model, it use to adjust free, can be widely used in the light fixture of AC and DC such as street lamp, bulkhead lamp capable, LED fluorescent tube, general lighting lamp and high and low pressure and different capacity.
The utility model can be widely used in the led light source field.
Claims (10)
1. LED lighting high-efficiency heat-radiating aluminum plate, comprise aluminum soleplate (1), it is characterized in that: the upper and lower surface of described aluminum soleplate (1) all is attached with one deck aluminium oxide heat conductive insulating layer (2), deposit aluminium lamination on the described aluminium oxide heat conductive insulating layer (2) that the upper surface of described aluminum soleplate (1) adheres to and form conductive metal layer (3), form the base (31) and the forming circuit line (32) of led chip after described conductive metal layer (3) etching, the remainder that described conductive metal layer (3) is gone up except that solder joint, chip and routing reserved location is covered with welding resisting layer (4).
2. LED lighting high-efficiency heat-radiating aluminum plate according to claim 1 is characterized in that: be provided with high value polysilicon barrier layer (8) between described aluminium oxide heat conductive insulating layer (2) and described conductive metal layer (3).
3. LED lighting high-efficiency heat-radiating aluminum plate according to claim 2 is characterized in that: the thickness on described high value polysilicon barrier layer (8) is 0.1～5 μ m.
4. LED lighting high-efficiency heat-radiating aluminum plate according to claim 1 is characterized in that: the thickness of described aluminium oxide heat conductive insulating layer (2) is 0.1～50 μ m.
5. LED lighting high-efficiency heat-radiating aluminum plate according to claim 1 is characterized in that: the aluminum layer thickness that described aluminium oxide heat conductive insulating layer (2) is gone up deposition is 2～5 μ m.
6. led light source; comprise several led chips (5); it is characterized in that: described led light source also comprises any described LED lighting high-efficiency heat-radiating aluminum plate of claim 1 to 5; the base (31) that several described led chips (5) are bonded and fixed at described led chip upward and by described circuit connection (32) constitutes the LED lighting circuit that connection in series-parallel concerns; and on every side relevant position last at described led chip (5) covers silica gel or the resin that contains or do not contain fluorescent material, forms protective layer (6).
7. led light source according to claim 6 is characterized in that: described led chip (5) is a high-power LED chip.
8. led light source according to claim 6 is characterized in that: described led chip (5) is divided into some groups, reaches between the some groups of described led chips (5) between the described led chip (5) of each group inside all to be connected by described circuit connection (32).
9. led light source according to claim 8 is characterized in that: mutual serial or parallel connection or connection in series-parallel are connected between the described led chip (5) of each group inside.
10. led light source according to claim 8 is characterized in that: mutual serial or parallel connection or connection in series-parallel are connected between the some groups of described led chips (5).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009202054759U CN201502997U (en) | 2009-09-27 | 2009-09-27 | High-efficiency heat dissipation aluminum substrate for LED illumination and LED light source |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009202054759U CN201502997U (en) | 2009-09-27 | 2009-09-27 | High-efficiency heat dissipation aluminum substrate for LED illumination and LED light source |
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| CN201502997U true CN201502997U (en) | 2010-06-09 |
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| CN2009202054759U Expired - Fee Related CN201502997U (en) | 2009-09-27 | 2009-09-27 | High-efficiency heat dissipation aluminum substrate for LED illumination and LED light source |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102563452A (en) * | 2010-09-29 | 2012-07-11 | 三星电子株式会社 | Backlight assembly having light emitting diode package and display apparatus having the same |
| WO2013188991A1 (en) * | 2012-06-19 | 2013-12-27 | 璩泽明 | Light-emitting diode package and heat dissipation module used by same |
| CN104157580A (en) * | 2014-08-12 | 2014-11-19 | 上海航天电子通讯设备研究所 | Embedded chip interconnecting and packaging method based on aluminum anodizing technology and structure |
-
2009
- 2009-09-27 CN CN2009202054759U patent/CN201502997U/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102563452A (en) * | 2010-09-29 | 2012-07-11 | 三星电子株式会社 | Backlight assembly having light emitting diode package and display apparatus having the same |
| US8870402B2 (en) | 2010-09-29 | 2014-10-28 | Samsung Display Co., Ltd. | Backlight assembly having light emitting diode package and display apparatus having the same |
| CN102563452B (en) * | 2010-09-29 | 2015-12-09 | 三星显示有限公司 | There is the backlight assembly of light emission diode package member and there is its display device |
| WO2013188991A1 (en) * | 2012-06-19 | 2013-12-27 | 璩泽明 | Light-emitting diode package and heat dissipation module used by same |
| CN104157580A (en) * | 2014-08-12 | 2014-11-19 | 上海航天电子通讯设备研究所 | Embedded chip interconnecting and packaging method based on aluminum anodizing technology and structure |
| CN104157580B (en) * | 2014-08-12 | 2017-06-06 | 上海航天电子通讯设备研究所 | Embedding chip interconnection packaging method and structure based on anode oxidation technology |
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Granted publication date: 20100609 Termination date: 20110927 |