CN201232028Y - 进气管喷嘴可调节的多晶硅还原炉 - Google Patents
进气管喷嘴可调节的多晶硅还原炉 Download PDFInfo
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- CN201232028Y CN201232028Y CNU2008201055923U CN200820105592U CN201232028Y CN 201232028 Y CN201232028 Y CN 201232028Y CN U2008201055923 U CNU2008201055923 U CN U2008201055923U CN 200820105592 U CN200820105592 U CN 200820105592U CN 201232028 Y CN201232028 Y CN 201232028Y
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- chassis
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- cooling water
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Abstract
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Claims (1)
- 进气管喷嘴可调节的多晶硅还原炉主要由底盘、含夹套冷却水的钟罩式双层炉体、电极、视镜孔、混和气进气管、混和气进气管喷嘴、混和气尾气出气管、炉体冷却水进水管、炉体冷却水出水管、底盘冷却水进水管、底盘冷却水出水管及其他附属部件组成,炉体主体采用不锈钢材质制成,每对电极分正、负极均匀的设置在底盘上,混和气进气管分为数个喷嘴均匀设置在底盘上,其特征是混和气进气管喷嘴为有外丝的喷气装置,通过螺丝连接在底盘有内丝的进气口上。
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CNU2008201055923U CN201232028Y (zh) | 2008-04-20 | 2008-04-20 | 进气管喷嘴可调节的多晶硅还原炉 |
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CNU2008201055923U CN201232028Y (zh) | 2008-04-20 | 2008-04-20 | 进气管喷嘴可调节的多晶硅还原炉 |
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102140678A (zh) * | 2009-12-17 | 2011-08-03 | 维塞尔·雷万卡 | 生产均匀多晶硅棒的方法、装置和cvd-西门子系统 |
CN102154629A (zh) * | 2011-05-30 | 2011-08-17 | 上海森松化工成套装备有限公司 | 多晶硅cvd炉混合气进出量调节装置及其调节方法 |
CN102345165A (zh) * | 2011-08-14 | 2012-02-08 | 上海合晶硅材料有限公司 | 降低多晶硅片翘曲度的装置 |
CN101993080B (zh) * | 2009-08-21 | 2012-12-19 | 张家港市华凌化工机械有限公司 | 多晶硅还原炉 |
CN104876222A (zh) * | 2015-04-10 | 2015-09-02 | 上海交通大学 | 硅烷热解的多晶硅生产方法与装置 |
CN111076280A (zh) * | 2019-11-25 | 2020-04-28 | 珠海格力电器股份有限公司 | 冷梁末端、冷梁系统 |
-
2008
- 2008-04-20 CN CNU2008201055923U patent/CN201232028Y/zh not_active Expired - Fee Related
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101993080B (zh) * | 2009-08-21 | 2012-12-19 | 张家港市华凌化工机械有限公司 | 多晶硅还原炉 |
CN102140678A (zh) * | 2009-12-17 | 2011-08-03 | 维塞尔·雷万卡 | 生产均匀多晶硅棒的方法、装置和cvd-西门子系统 |
CN102140678B (zh) * | 2009-12-17 | 2015-12-09 | 维塞尔·雷万卡 | 生产均匀多晶硅棒的方法、装置和cvd-西门子系统 |
CN102154629A (zh) * | 2011-05-30 | 2011-08-17 | 上海森松化工成套装备有限公司 | 多晶硅cvd炉混合气进出量调节装置及其调节方法 |
CN102154629B (zh) * | 2011-05-30 | 2013-03-13 | 上海森松化工成套装备有限公司 | 多晶硅cvd炉混合气进出量调节装置及其调节方法 |
CN102345165A (zh) * | 2011-08-14 | 2012-02-08 | 上海合晶硅材料有限公司 | 降低多晶硅片翘曲度的装置 |
CN102345165B (zh) * | 2011-08-14 | 2014-03-19 | 上海合晶硅材料有限公司 | 降低多晶硅片翘曲度的装置 |
CN104876222A (zh) * | 2015-04-10 | 2015-09-02 | 上海交通大学 | 硅烷热解的多晶硅生产方法与装置 |
CN104876222B (zh) * | 2015-04-10 | 2017-05-24 | 上海交通大学 | 硅烷热解的多晶硅生产方法与装置 |
CN111076280A (zh) * | 2019-11-25 | 2020-04-28 | 珠海格力电器股份有限公司 | 冷梁末端、冷梁系统 |
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C14 | Grant of patent or utility model | ||
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EE01 | Entry into force of recordation of patent licensing contract |
Assignee: Jiangsu Zhongneng Polysilicon Technology Development Co., Ltd. Assignor: Xuzhou Dongnan polysilicon Material Development Co.Ltd Contract fulfillment period: 2009.5.16 to 2018.4.19 Contract record no.: 2009320000989 Denomination of utility model: Polycrystalline silicon reducing furnace with adjustable air inlet pipe nozzle Granted publication date: 20090506 License type: Exclusive license Record date: 20090610 |
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Free format text: EXCLUSIVE LICENSE; TIME LIMIT OF IMPLEMENTING CONTACT: 2009.5.16 TO 2018.4.19; CHANGE OF CONTRACT Name of requester: JIANGSU ZHONGNENG SILICON INDUSTRY SCIENCE AND TEC Effective date: 20090610 |
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Owner name: NANJING XIEXIN PHOTOVOLTAIC ELECTRIC POWER TECHNOL Free format text: FORMER OWNER: XUZHOU DONGNAN POLYSILICON MATERIAL DEVELOPMENT CO.LTD;HUALU ENGINEERING TECHNOLOGY CO.LTD Effective date: 20110927 |
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Effective date of registration: 20110927 Address after: 211106 Jiangning Province Economic and Technological Development Zone, Jiangsu City, No. Sheng Tai Road, No. 68 Patentee after: Nanjing PV Power Technology Co. Ltd. Address before: 221004 No. 8 Yang Shan Road, Xuzhou Economic Development Zone, Xuzhou, Jiangsu Patentee before: Xuzhou Dongnan polysilicon Material Development Co.Ltd |
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