CN201186403Y

CN201186403Y - Adjusting ring capable of improving short finish of edge

Info

Publication number: CN201186403Y
Application number: CNU2008200556614U
Authority: CN
Inventors: 马智勇; 陈肖科; 邢程; 周华
Original assignee: Semiconductor Manufacturing International Shanghai Corp
Current assignee: Semiconductor Manufacturing International Beijing Corp
Priority date: 2008-02-22
Filing date: 2008-02-22
Publication date: 2009-01-28
Anticipated expiration: 2018-02-22

Abstract

The utility model provides an adjusting ring capable of improving the insufficient polishing of edges, which is arranged on the bottom of a grinding head of a chemical and mechanical polishing device, and an elastic sleeve is sleeved outside of the adjusting ring, and a plurality of through-holes are arranged on the adjusting ring. No groove capable of improving the pressure on the edge of the adjusting ring is arranged on the surface where an existing adjusting ring is adjacent with a wafer in the prior art, thereby the pressure on the edge of the adjusting ring only can be adjusted through other adjusting modes, such as adjusting the pressure of an inner cavity or a positioning ring, and thereby defects of affecting the center pressure and needing multiple-time and adjusting repeatedly are existed. The adjusting ring capable of improving the insufficient polishing of the edges is characterized by arranging a round groove or an annular groove on an area which is close to the edge on the surface where the adjusting ring is adjacent with the wafer, and the center of the round groove or an annular groove is overlapped with that of the adjusting ring. With the adjusting ring, the phenomenon of remaining medium due to the insufficient polishing of the edge which is generated when the chemical and mechanical polishing device is used for polishing can be improved.

Description

A kind of adjustment ring that improves the edge polishing deficiency

Technical field

The utility model relates to semiconductor manufacturing facility, relates in particular to a kind of adjustment ring that improves the edge polishing deficiency.

Background technology

Enter epoch of 0.13 micron when semiconductor devices after, chemically mechanical polishing (CMP) technology becomes the necessary operation that semiconductor is made because of the overall planarization that can realize crystal column surface.CMP technology is carried out in corresponding C MP board, referring to Fig. 1, the CMP board that is provided with the adjustment ring of prior art has the grinding table 10 that is used to place wafer and carries out grinding operation, be placed on the grinding pad 11 that has lapping liquid on the grinding table 10 and on it and be used for being pressed in wafer on the grinding pad 11 and the grinding head 12 of drive wafer rotation, this grinding head 12 has the pedestal 120 of grinding, be used to adjust the internal chamber (inner tube) 121 of grinding head 12 pressure, be used to locate the locating ring (retaining ring) 122 and the adjustment ring (tuning ring) 123 that is used to adjust the wafer upward pressure of wafer, the adjustment ring 123 of prior art is a disk, offer a plurality of through hole 123a on it, its outside also is arranged with resilient sleeve 124, and this resilient sleeve 124 directly contacts with wafer.When use CMP board as shown in Figure 1 carries out chemically mechanical polishing, grinding head 12 is pressed in wafer on the grinding pad 11 and drives the wafer rotation, 11 of grinding pads are with opposite direction rotation, chemical attack has also taken place in the mechanical lapping wafer, so CMP technology has had the advantage of mechanical lapping and chemical grinding concurrently.

But when carrying out chemically mechanical polishing by above-mentioned CMP board, can the residual of medium occur being removed at crystal round fringes, those are residual is removed medium and can causes scrapping of edge devices, can cause scrapping of device on the whole wafer under the serious situation.Doubt by analysis because of the too small edge medium that causes of the pressure at grinding head 12 edges residual, so overcome the residual phenomenon of this edge medium by the pressure of adjustment internal chamber 121 and locating ring 122.By after adjusting internal chamber 121 and locating ring 122 and increasing the rim pressure of grinding head 12, the residual phenomenon of crystal round fringes medium has obtained alleviation, but the adjustment of this internal chamber 121 and locating ring 122 pressure has influenced the removal of the medium at crystal circle center position, this kind method can not well be improved the residual problem of crystal round fringes medium under the prerequisite of taking into account the center quality of finish, in addition, this kind method needs to seek optimum pressure at different wafers, so also exist problem time-consuming and that efficient is not high, so the people in the industry has been placed on the focus of making great efforts on the adjustment ring 123 that can adjust wafer pressure, attempt to adjust the phenomenon that ring 123 improves the crystal round fringes directional polish by improving.

Therefore, how to provide a kind of adjustment ring that improves the edge polishing deficiency with under the prerequisite of guaranteeing the central area quality of finish, the convenient problem of improving the crystal round fringes directional polish has efficiently become the technical problem that industry needs to be resolved hurrily.

The utility model content

The purpose of this utility model is to provide a kind of adjustment ring that improves the edge polishing deficiency, can effectively improve the problem of crystal round fringes directional polish under the prerequisite of guaranteeing the central area quality of finish by described adjustment ring.

The purpose of this utility model is achieved in that a kind of adjustment ring that improves the edge polishing deficiency, its grinding head bottom and its outer cover that is arranged on chemical-mechanical polisher is provided with a resilient sleeve, have a plurality of through holes on this adjustment ring, this adjustment encircles on its face adjacent with wafer and submarginal zone is provided with a circular groove or annular groove, and the center of this circular groove or annular groove overlaps with the center of this adjustment ring.

In the adjustment ring of above-mentioned improved edge polishing deficiency, the diameter of this adjustment ring is 200 millimeters.

In the adjustment ring of above-mentioned improved edge polishing deficiency, the diameter range of this circular groove is 153.772 to 195.326 millimeters.

In the adjustment ring of above-mentioned improved edge polishing deficiency, the inside diameter scope of this annular groove is 153.518 to 195.072 millimeters, and the outer dia scope is 153.772 to 195.326 millimeters, and this outer dia is greater than this inside diameter.

In the adjustment ring of above-mentioned improved edge polishing deficiency, the depth bounds of this circular groove and this annular groove is 0.534 millimeter to 0.559 millimeter.

In the adjustment ring of above-mentioned improved edge polishing deficiency, this adjustment ring is a disk.

There is no setting on the face adjacent with wafer can improve to adjust and encircle the rim pressure grooves distributed with adjusting ring in the prior art, so can only adjust the pressure at ring edge by the pressure of regulating internal chamber and locating ring, compare thereby exist in the shortcoming that influences center pressure and need repeatedly repeat to adjust, the adjustment ring that improves the edge polishing deficiency of the present utility model on its face adjacent with wafer and submarginal zone be provided with a circular groove or annular groove, the center of this circular groove or annular groove overlaps with the center of this wafer, so can be when not influencing adjustment ring central area pressure, the pressure of the increase adjustment ring fringe region of simple and effective, then can effectively improve the problem of the removal medium edge directional polish on the wafer, improve the quality of chemically mechanical polishing accordingly.

Description of drawings

The adjustment ring that improves the edge polishing deficiency of the present utility model is provided by following embodiment and accompanying drawing.

Fig. 1 is the cutaway view with chemical-mechanical polisher of adjustment ring of the prior art;

Fig. 2 is the front view of first embodiment of the adjustment ring that improves the edge polishing deficiency of the present utility model;

Fig. 3 for the A-A of first embodiment of the adjustment ring that improves the edge polishing deficiency of the present utility model to cutaway view;

Fig. 4 is the front view of second embodiment of the adjustment ring that improves the edge polishing deficiency of the present utility model;

Fig. 5 for the B-B of second embodiment of the adjustment ring that improves the edge polishing deficiency of the present utility model to cutaway view.

The specific embodiment

Below will be described in further detail the adjustment ring that improves the edge polishing deficiency of the present utility model.

The adjustment ring that improves the edge polishing deficiency of the present utility model is arranged on the bottom of the grinding head 12 of chemical-mechanical polisher as shown in Figure 1, and its outer cover is provided with resilient sleeve 124.

Referring to Fig. 2 and Fig. 3, it has shown front view and the cutaway view of first embodiment of the adjustment ring that improves the edge polishing deficiency of the present utility model respectively, as shown in the figure, adjustment ring in the present embodiment is a disk, have a plurality of through holes 20 on it, described through hole 20 is arranged in the zone at 70 millimeters at its center, described adjustment ring is on its front and submarginal zone is provided with circular groove 21 at its face adjacent with described wafer, and the center of described circular groove 21 overlaps with the center of described adjustment ring 2.In the present embodiment, the diameter of described adjustment ring 2 is 200 millimeters, and the diameter range of described circular groove 21 is 153.772 to 195.326 millimeters, and the depth bounds of described circular groove 21 is 0.534 millimeter to 0.559 millimeter.

Referring to Fig. 4 and Fig. 5, it has shown front view and the cutaway view of second embodiment of the adjustment ring that improves the edge polishing deficiency of the present utility model respectively, as shown in the figure, adjustment ring in the present embodiment is a disk, have a plurality of through holes 30 on it, described through hole 30 is arranged in the zone at 70 millimeters at its center, described adjustment ring is on its front and submarginal zone is provided with annular groove 31 at its face adjacent with described wafer, and the center of described annular groove 31 overlaps with the center of described adjustment ring.In the present embodiment, the diameter of described adjustment ring is 200 millimeters, the inside diameter scope of described annular groove 31 is 153.518 to 195.072 millimeters, the outer dia scope is 153.772 to 195.326 millimeters, and described outer dia is greater than described inside diameter, and the degree of depth of described annular groove 31 is 0.534 millimeter to 0.559 millimeter.

Use the adjustment ring of first and second embodiment of the present utility model to replace the adjustment ring 123 shown in Fig. 1 successively, and use the chemical-mechanical polishing mathing platform of adjustment ring to carry out chemically mechanical polishing respectively with first and second embodiment of the present utility model, experimental data proves, the adjustment ring of first and second embodiment of the present utility model can be under the prerequisite that does not influence crystal circle center's zone quality of finish, effectively improve the problem of crystal round fringes directional polish, under the suitable situation of other parameters, can effectively overcome crystal round fringes and be removed the residual phenomenon of medium.

In sum, the adjustment ring that improves the edge polishing deficiency of the present utility model on its face adjacent with described wafer and submarginal zone be provided with a circular groove or annular groove, the center of described circular groove or annular groove overlaps with the center of described wafer, so can be when not influencing adjustment ring central area pressure, the pressure of the increase adjustment ring fringe region of simple and effective, then can effectively improve the problem of the removal medium edge directional polish on the wafer, improve the quality of chemically mechanical polishing accordingly.

Claims

1, a kind of adjustment ring that improves the edge polishing deficiency, its grinding head bottom and its outer cover that is arranged on chemical-mechanical polisher is provided with a resilient sleeve, have a plurality of through holes on this adjustment ring, it is characterized in that, this adjustment encircles on its face adjacent with wafer and submarginal zone is provided with a circular groove or annular groove, and the center of this circular groove or annular groove overlaps with the center of this adjustment ring.

2, the adjustment ring that improves the edge polishing deficiency as claimed in claim 1 is characterized in that, the diameter of this adjustment ring is 200 millimeters.

3, the adjustment ring that improves the edge polishing deficiency as claimed in claim 2 is characterized in that, the diameter range of this circular groove is 153.772 to 195.326 millimeters.

4, the adjustment ring that improves the edge polishing deficiency as claimed in claim 2, it is characterized in that, the inside diameter scope of this annular groove is 153.518 to 195.072 millimeters, and the outer dia scope is 153.772 to 195.326 millimeters, and this outer dia is greater than this inside diameter.

5, the adjustment ring that improves the edge polishing deficiency as claimed in claim 2 is characterized in that, the depth bounds of this circular groove and this annular groove is 0.534 millimeter to 0.559 millimeter.

6, the adjustment ring that improves the edge polishing deficiency as claimed in claim 1 is characterized in that, this adjustment ring is a disk.