KR100252875B1 - Polishing device of semiconductor device - Google Patents

Polishing device of semiconductor device Download PDF

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Publication number
KR100252875B1
KR100252875B1 KR1019970050954A KR19970050954A KR100252875B1 KR 100252875 B1 KR100252875 B1 KR 100252875B1 KR 1019970050954 A KR1019970050954 A KR 1019970050954A KR 19970050954 A KR19970050954 A KR 19970050954A KR 100252875 B1 KR100252875 B1 KR 100252875B1
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South Korea
Prior art keywords
pad
carrier
polishing
wafer
semiconductor device
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KR1019970050954A
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Korean (ko)
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KR19990030643A (en
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김진웅
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김영환
현대반도체주식회사
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Priority to KR1019970050954A priority Critical patent/KR100252875B1/en
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

PURPOSE: A mirror face polish apparatus is provided to improve the planarization and uniformity by performing polishing using a pad having a polish paper of a different hardness. CONSTITUTION: A mirror face polish apparatus includes a carrier(22) for moving up/down a loaded wafer. The carrier(22) rotates and vibrates. A pad(23) is divided into a plurality of ground shapes while rotating in an opposite direction to the carrier(22). The pad(23) has polish papers of different hardness and polishes the wafer(21). A rotator(24) has the pad(23). The pad(23) consists of a hard portion, a medium portion and a soft portion. The wafer carrier(22) is connected to a robot arm(25).

Description

반도체소자의 경면 연마 장비Mirror Polishing Equipment for Semiconductor Devices

본 발명은 반도체 제조장비에 관한 것으로 특히, 평탄도 및 균일도 향상시키는데 적당한 반도체소자의 경면 연마 장비에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to semiconductor manufacturing equipment, and more particularly, to mirror polishing equipment for semiconductor devices suitable for improving flatness and uniformity.

일반적으로 CMP(Chemical Mechanical Polishing) 공정은 가격이 높고 생산량도 많은 PC용 MPU부터 시작되어 현재는 디자인 룰(Design Rule) 0.35㎛의 로직 디바이스(Logic Device)에서 양산에 적용중이며, DRAM에서도 0.25㎛의 256M이나 빠르면 0.30㎛의 64M 3세대부터 적용될 것으로 예상된다.In general, CMP (Chemical Mechanical Polishing) process starts with high price and high production volume MPU for PC, and is currently being applied to mass production in design rule of 0.35㎛ Logic Device and 0.25㎛ in DRAM. As fast as 256M, it is expected to be applied from the third generation of 64M of 0.30㎛.

따라서 CMP는 평탄화를 위해 향후에 필수불가결한 핵심기술로 MPU 보다 상택적으로 제품 가격이 작은 로직이나 메모리 제품에 적용되기위해 비용, 셈플 시스템 사이즈, 프로세스 신뢰성, 폐수 처리문제 등의 문제점들이 해결되어야 한다.Therefore, CMP is a core technology that is indispensable in the future for flattening, and problems such as cost, sample system size, process reliability, and wastewater treatment problems must be solved in order to be applied to logic or memory products that are lower in price than MPU. .

이하, 첨부된 도면을 참고하여 종래의 반도체소자의 경면 연마 장비를 설명하면 다음과 같다.Hereinafter, a mirror polishing apparatus of a conventional semiconductor device will be described with reference to the accompanying drawings.

도 1은 종래의 CMP 장비를 나타낸 정면도이다.1 is a front view showing a conventional CMP equipment.

도 1에 도시한 바와같이 로딩된 웨이퍼(Wafer)(11)를 상하좌우로 이동시키고 회전과 진동을 하는 캐리어(Carrier)(12)와, 상기 캐리어(12)와 반대방향으로 회전하면서 상기 웨이퍼(11)의 연마대상층을 연마하기 위해 동일한 경도의 연마포를 갖는 패드(13)와, 상기 패드(13)를 포함하고 구성되는 회전자(14)로 구성된다.As shown in FIG. 1, a carrier 12 which moves the loaded wafer 11 up, down, left, and right, rotates and vibrates, and rotates in a direction opposite to the carrier 12. In order to grind the polishing target layer of 11), a pad 13 having a polishing cloth of the same hardness and a rotor 14 including and configured as the pad 13 are formed.

여기서 상기 웨이퍼 캐리어(12)는 로봇 팔(Arm)(15)에 연결되어 있다.The wafer carrier 12 is here connected to a robot arm 15.

상기와 같이 구성된 CMP 장비는 다음과 같은 동작으로 CMP 공정을 수행한다.The CMP apparatus configured as described above performs the CMP process in the following operation.

먼저, 웨이퍼(11)가 캐리어(12)에 로딩되면 캐리어(12)가 다운되면서 회전과 진동 운동을 하게 된다.First, when the wafer 11 is loaded on the carrier 12, the carrier 12 is down and rotates and vibrates.

이때, 슬러리가 패드(13)위로 공급된다.At this time, the slurry is supplied onto the pad 13.

상기 패드(13)상면에 구성되는 연마포와 슬러리에 의해 웨이퍼(11)에 형성된 연마 대상층이 연마된다.The polishing target layer formed on the wafer 11 is polished by the polishing cloth and the slurry formed on the upper surface of the pad 13.

그리고 상기 경연 연마 공정이 끝나면 웨이퍼(11)는 세정부로 이동되어 세정 과정을 거쳐 카세트로 언로딩된다.After the hard polishing process is completed, the wafer 11 is moved to the cleaning unit and unloaded into the cassette after the cleaning process.

그러나 이와 같은 종래의 CMP 장비에 있어서 웨이퍼의 연마대상층을 연막할 때 동일한 경도의 연마포를 갖는 패드를 사용하여 연마하기 때문에 평탄도 및 균일도를 향상시키는데 한계가 있다는 문제점이 있었다.However, in the conventional CMP equipment, there is a problem in that there is a limit in improving flatness and uniformity because the polishing is performed by using a pad having the same hardness as the polishing cloth when the polishing target layer of the wafer is smoked.

본 발명은 상기와 같은 문제점을 해결하기 위해 안출한 것으로 서로 다른 경도의 연마포를 갖는 패드를 이용하여 연마함으로써 평탄도 및 균일도를 향상시킬 수 있는 반도체소자의 경면 연마 장비를 제공하는데 그 목적이 있다.An object of the present invention is to provide a mirror polishing apparatus of a semiconductor device that can improve the flatness and uniformity by polishing by using a pad having a polishing cloth of different hardness to solve the above problems. .

도 1은 종래의 CMP 장비의 정면도1 is a front view of a conventional CMP equipment

도 2는 본 발명에 의한 CMP 장비의 평면도2 is a plan view of the CMP equipment according to the present invention

도 3은 본 발명에 의한 CMP 장비의 정면도3 is a front view of the CMP equipment according to the present invention

도면의 주요 부분에 대한 부호의 설명Explanation of symbols for the main parts of the drawings

21 : 웨이퍼 22 : 캐리어21 wafer 22 carrier

23 : 패드 24 : 회전자23: pad 24: rotor

25 : 로봇 팔25: robot arm

상기와 같은 목적을 달성하기 위한 본 발명에 의한 반도체소자의 경면 연마 장비는 로딩된 연마 대상층을 상하좌우로 이동시키고 회전과 진동을 하는 캐리어와, 상기 캐리어와 반대방향으로 회전하면서 복수개의 그라운드 형태로 분할되어 서로 다른 경도를 갖고 상기 캐리어에 의해 공급된 연마 대상층을 연마하는 패드와, 그리고 상기 패드를 포함하고 구성되는 회전자를 포함하여 구성됨을 특징으로 한다The mirror polishing apparatus of the semiconductor device according to the present invention for achieving the above object is to move the loaded polishing target layer up and down, left and right, and to rotate and vibrate, and to rotate in the opposite direction to the carrier in the form of a plurality of grounds And a pad for dividing the polishing object layer supplied by the carrier having different hardnesses and a rotor including the pad.

이하, 첨부된 도면을 참고하여 본 발명에 의한 반도체소자의 경면 연마 장비를 설명하면 다음과 같다.Hereinafter, a mirror polishing apparatus of a semiconductor device according to the present invention will be described with reference to the accompanying drawings.

도 2는 본 발명에 의한 CMP 장비의 평면도이고, 도 3은 본 발명에 의한 CMP 장비의 정면도이다.2 is a plan view of the CMP equipment according to the present invention, Figure 3 is a front view of the CMP equipment according to the present invention.

도 2 및 도 3에 도시한 바와같이 로딩된 웨이퍼(Wafer)(21)를 상하좌우로 이동시키고 회전과 진동을 하는(Carrier)(22)와, 상기 캐리어(22)와 반대방향으로 회전하면서 복수개의 그라운드(Ground) 형태로 분할되어 서로 다른 경도의 연마포를 갖고 상기 웨이퍼(21)를 연마하는 패드(23)와, 상기 패드(23)를 포함하고 구성되는 회전자(24)로 구성된다.As shown in FIGS. 2 and 3, the loaded wafer 21 moves up, down, left, and right, and rotates and vibrates (Carrier) 22, and rotates in the opposite direction to the carrier 22. The pad 23 is divided into four ground shapes and has a polishing cloth having different hardness, and includes a pad 23 for polishing the wafer 21, and a rotor 24 including the pad 23.

여기서 상기 서로 다른 경도의 연마포를 갖는 패드(23)는 외부에서 중심으로 갈수록 하드(Hard), 미디엄(Medium), 소프트(Soft) 순으로 이루어져 있고, 상기 웨이퍼 캐리어(22)는 로봇 팔(25)에 연결되어 있다.Here, the pads 23 having the abrasive cloths of different hardness are formed in the order of Hard, Medium, and Soft in order from the outside to the center, and the wafer carrier 22 is the robot arm 25. )

상기와 같이 구성된 CMP 장비는 다음과 같은 동작으로 CMP 공정을 수행한다.The CMP apparatus configured as described above performs the CMP process in the following operation.

먼저, 웨이퍼(21)가 캐리어(22)에 로딩되면 캐리어(22)가 다운되면서 회전과 진동 운동을 하게 된다.First, when the wafer 21 is loaded on the carrier 22, the carrier 22 is down and rotates and vibrates.

이때, 슬러리가 패드(23)위로 공급된다.At this time, the slurry is supplied onto the pad 23.

상기 패드(23)상면에 구성되는 연마포와 슬러리에 의해 웨이퍼(21)에 형성된 연마 대상층이 연마된다.The polishing target layer formed on the wafer 21 is polished by the polishing cloth and the slurry formed on the upper surface of the pad 23.

그리고 상기 경연 연마 공정이 끝나면 웨이퍼(21)는 세정부로 이동되어 세정 과정을 거쳐 카세트로 언로딩된다.After the hard polishing process is completed, the wafer 21 is moved to the cleaning unit and unloaded into the cassette after the cleaning process.

즉, 웨이퍼(21)의 연마 대상층을 서로 다른 경도의 연마포를 갖는 패드(23)로 공급하여 연마를 한다.That is, the polishing target layer of the wafer 21 is supplied to the pad 23 having polishing cloths of different hardness to be polished.

이상에서 설명한 바와같이 본 발명에 의한 반도체소자의 경면 연마 장비에 있어서 복수개의 그라운드 형태로 분할되어 서로 다른 경도의 연마포를 갖는 패드를 이용하여 선택적으로 연마함으로써 평탄화 및 균일도를 향상시키는 효과가 있다.As described above, in the mirror polishing apparatus of the semiconductor device according to the present invention, it is divided into a plurality of grounds and selectively polished using a pad having polishing cloths of different hardness, thereby improving planarization and uniformity.

Claims (2)

로딩된 연마 대상층을 상하좌우로 이동시키고 회전과 진동을 하는 캐리어와,A carrier which moves the loaded polishing target layer up, down, left and right, and rotates and vibrates, 상기 캐리어와 반대방향으로 회전하면서 복수개의 그라운드 형태로 분할되어 서로 다른 경도를 갖고 상기 캐리어에 의해 공급된 연마 대상층을 연마하는 패드와, 그리고A pad which is divided into a plurality of grounds while rotating in the opposite direction to the carrier and polishes the polishing target layer supplied by the carrier with different hardnesses, and 상기 패드를 포함하고 구성되는 회전자를 포함하여 구성됨을 특징으로 하는 반도체소자의 폴리싱 장비.Polishing equipment for a semiconductor device, characterized in that comprising a rotor comprising the pad and configured. 제 1 항에 있어서,The method of claim 1, 상기 패드는 외부에서 중심방향으로 갈 수록 경도가 부드러운 연마포로 이루어짐을 특징으로 하는 반도체소자의 폴리싱 장비.The pad is a polishing device for a semiconductor device, characterized in that made of a polishing cloth with a soft hardness toward the center from the outside.
KR1019970050954A 1997-10-02 1997-10-02 Polishing device of semiconductor device KR100252875B1 (en)

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