CN201167207Y - Arsenic acid titanium oxygen potassium crystal full-solid Raman laser - Google Patents
Arsenic acid titanium oxygen potassium crystal full-solid Raman laser Download PDFInfo
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- CN201167207Y CN201167207Y CNU2008200180771U CN200820018077U CN201167207Y CN 201167207 Y CN201167207 Y CN 201167207Y CN U2008200180771 U CNU2008200180771 U CN U2008200180771U CN 200820018077 U CN200820018077 U CN 200820018077U CN 201167207 Y CN201167207 Y CN 201167207Y
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Abstract
The utility model relates to a kalium titanyl arsenate crystal Raman laser, and belongs to the solid laser field. The laser adopts an LD-pumped neodymium-doped or ytterbium-doped laser crystal to generate the fundamental frequency light, after being modulated by a Q-switch, the fundamental frequency light is converted into the Raman light through Raman crystal (KTiOAsO4 and KTA), and is output through an output mirror. The laser has the advantages of small volume, stable performance, high power, low cost, etc., and has wide application prospect.
Description
(1) technical field
The utility model relates to a kind of solid state laser, particularly a kind of KTA crystal full solid Raman laser.
(2) background technology
Stimulated Raman scattering is a kind of important laser frequency technology, can arrive the output wavelength range expansion of laser infrared to ultraviolet by stimulated Raman scattering.The solid Roman medium is compared with gas or liquid Raman medium, has advantages such as particle concentration is big, volume is little, stable performance, pumping threshold is low, thermal conductivity is good.In recent years, solid Roman medium and total solids Raman laser had become one of research focus of laser device field.The home and abroad is relevant for the report of solid Roman laser at present, and they mainly adopt tungstates (KGd (WO
4)
2, BaWO
4, SrWO
4), vanadic acid salt (YVO
4, GdVO
4), Nitrates (Ba (NO
3)
2), iodates (LiIO
3) wait crystal as the Raman medium.The Raman frequency shift of these Raman media is generally at 900cm
-1More than, therefore when using 1.06 microns the most ripe laser pumpings, can obtain the raman laser about 1.18 microns.Arsenic acid titanyl potassium crystal is at 234cm
-1There is very strong Raman gain at the place, can obtain 1.09 microns raman lasers, but also finds the Raman laser realized with this crystal so far.
(3) summary of the invention
For overcoming the defective of prior art, to obtain 1.09 microns raman laser outputs, the utility model provides a kind of arsenic acid titanyl potassium crystal (KTiOAsO4, KTA) total solids Raman laser.
A kind of arsenic acid titanyl potassium (KTA) crystal total solids Raman laser comprises laser diode (LD) pumping source, resonant cavity, and resonant cavity is made up of Effect of Back-Cavity Mirror and outgoing mirror, it is characterized in that placing in the resonant cavity gain medium, Q-modulating device and KTA crystal; Gain medium, Q-modulating device and KTA crystal carry out temperature control by cooling device to it; The pump light that is produced by the laser diode LD pumping source is coupled into gain medium, the fundamental frequency light that is produced is by the KTA crystal, because the KTA crystal has Raman effect, thereby can produce stimulated Raman scattering, can produce the Raman conversion effectively, obtain 1.09 microns raman lasers, export by outgoing mirror.
Described laser diode LD pumping source can be the continuous light pumping, also can be quasi-continuous optical pumping; Can be LD end pumping source, it comprises driving power, laser diode, cooling device, optical fiber and coupled lens group; Also can be LD profile pump source, it comprises driving power, LD side pump module, cooling device.
Described resonant cavity is straight chamber, also can be refrative cavity (must add refrative mirror during refrative cavity to change the light path approach), and the chamber is long to be 5cm-50cm, and the Effect of Back-Cavity Mirror of resonant cavity and the radius of curvature of outgoing mirror can be selected according to actual conditions.
Described resonant cavity is under LD end pumping situation, and the Q-switch in the resonant cavity and the relative position of KTA crystal can be changed; Under LD profile pump situation, the relative position of side pump module in the resonant cavity and gain medium, Q-switch, KTA crystal can be changed mutually.
Described gain medium can be a kind of in neodymium-doped (Nd) or the following all crystal of mixing ytterbium (Yb): yttrium-aluminium-garnet (YAG), vanadic acid yttrium (YVO4), vanadic acid gadolinium (GdVO4), vanadic acid lutetium (LuVO4), lithium yttrium fluoride (YLF), yttrium aluminate (YAP), Gd-Ga garnet (GGG), wolframic acid gadolinium potassium (KGd (WO4) 2) etc.; Also can be bonding crystal yttrium-aluminium-garnet/neodymium-doped yttrium-aluminum garnet (YAG/Nd:YAG), vanadic acid yttrium/Nd-doped yttrium vanadate (YVO
4/ Nd:YVO
4) a kind of in all crystal.
The doping content of described gain medium is 0.05-at.% to 3-at.% when neodymium-doped; When mixing ytterbium 0.05-at.% to 10-at.%.
Two end faces of described gain medium all are coated with the anti-reflection film to pump light wave band and 1000nm-1100nm wave band.
Described Q-modulating device can be any one in electric-optically Q-switched device, acousto-optic Q modulation device or the passive Q-adjusted device of saturable absorber: the acousto-optic Q modulation device is made up of radio frequency input unit and adjusting Q crystal, and the both ends of the surface of adjusting Q crystal all are coated with the anti-reflection film of 1000nm-1100nm wavelength; Modulating frequency is 1Hz-100KHz, by the density of input radio frequency ripple change adjusting Q crystal, sexually revises the purpose of laserresonator threshold value performance period, plays the Q-switch effect; Electric-optically Q-switched device is made up of electrooptic crystal and driving power, utilizes the electro optic effect of crystal, the phase place of passing through laser is wherein produced modulation, and then change polarization state, finishes open and close door process, and modulating frequency is 1Hz-100KHz; Saturable absorber is to utilize the exciting of material, transition characteristic, closes the door when being excited to absorb, opens the door during transition downwards, finishes open and close gate control to laser with this, and modulating frequency is 1Hz-100KHz.
Described cooling device has dual mode: the recirculated water cooling---crystal on side face all encases with the metal derby that has pipeline, continues to be connected with recirculated cooling water in the pipeline of metal derby, is used for reducing temperature to crystal; Semiconductor refrigerating---crystal on side face is surrounded by the semiconductor refrigerating piece.
The both ends of the surface of described KTA crystal all are coated with the anti-reflection film of 1000nm-1100nm wavelength.The length of all crystals in the utility model all can be chosen according to specific requirement; The end surface shape of crystal and area can be determined according to the area of beam cross section.
Effect of Back-Cavity Mirror in the described resonant cavity is coated with the anti-reflection film of pump light wave band and is 1000nm-1100nm wave band reflectivity greater than 95% reflectance coating to wavelength; Outgoing mirror is coated with at 1 micron waveband place reflectivity greater than 95% reflectance coating, and this film be that 1.09 microns light has through scope to wavelength is 3%～70% transmissivity.
Because Raman effect is the nonlinear effect on three rank, need fundamental frequency light to have higher peak power,, can increase the peak power of fundamental frequency light like this so we use Q-modulating device in laser, thereby improve the conversion efficiency of fundamental frequency light, effectively improved the performance of laser to Raman light.
The workflow of laser is as follows: the pump light that the LD pumping source sends is coupled into gain medium, and when the Q-switch of Q-modulating device was closed, pump light transferred the counter-rotating particle to and stores; When Q switching was opened, a large amount of counter-rotating particle moment of saving bit by bit transferred fundamental frequency light to by stimulated radiation; Fundamental frequency light with high peak power transfers Raman light to by stimulated Raman scattering, and is exported by outgoing mirror through the KTA Raman crystal.
The utility model has used a kind of new Raman crystal KTA, use laser diode LD pumping source and gain medium, adopt the mode of Raman in the chamber successfully to produce 1.09 microns laser, provide that a kind of new high efficiency, high power, volume is little, the total solids Raman laser of good stability.The volume of the utility model laser head can accomplish about 10cm * 10cm * 20cm, and the power output of Raman light is greater than 1W, stable performance.
(4) description of drawings
Fig. 1 is a straight chamber light channel structure schematic diagram under the utility model laser LD end pumping situation, Fig. 2 is a straight chamber light channel structure schematic diagram under the utility model laser LD profile pump situation, and Fig. 3 is the schematic diagram of refrative cavity under the utility model laser LD end pumping situation.
Wherein: 1. laser diode LD, 2. optical fiber, 3. coupled lens group, 4. Effect of Back-Cavity Mirror, 5. gain medium, 6. Q-modulating device, 7.KTA Raman crystal, 8. outgoing mirror, 9. cooling device, 10.LD side pumping module, 11. refrative mirrors.
(5) embodiment
Embodiment 1:
The utility model laser embodiment 1 as shown in Figure 1, comprise laser diode LD 1, optical fiber 2, coupled lens group 3 resonant cavity, resonant cavity is made up of Effect of Back-Cavity Mirror 4 and outgoing mirror 8, places gain medium 5 neodymium-doped yttrium-aluminum garnets (Nd:YAG) laser crystal, acousto-optic Q modulation switch 6 and KTA crystal 7 in the resonant cavity successively; The pump light that is produced by LD end pumping source is coupled into gain medium 5, and the fundamental frequency light that is produced is by KTA crystal 7, because KTA crystal 7 has Raman effect, thereby can produce stimulated Raman scattering, produces Raman light through outgoing mirror 8 outputs.KTA crystal 7 can effectively produce the Raman conversion, obtain 1.09 microns raman lasers as the Raman medium.Above-mentioned Nd:YAG laser crystal 5, acousto-optic Q modulation switch 6 and KTA crystal 7 sides all surround with the metal derby that has pipeline, and the pipeline in the metal derby continues to be connected with recirculated cooling water, are used for reducing temperature to crystal, and water temperature is controlled at 20 degree.
Described laser diode LD 1 end pumping source is to be near the 808nm LD end pumping source (peak power 25W) and corresponding optical fiber 2 (400 microns of core diameters by wavelength, numerical aperture 0.22) and coupled lens group 3 (imaging in 1: 1, operating distance 50mm) form.
Described laser crystal Nd:YAG crystal 5 is of a size of φ 4mm * 5mm, and its doping content is the anti-reflection film (transmitance is greater than 99.8%) that two end faces of 1-at.% all are coated with 808nm and 1000nm-1100nm wavelength.
Described acousto-optic Q modulation device 6 is made up of radio frequency input unit and adjusting Q crystal, and the length of adjusting Q crystal is 38mm, and both ends of the surface all are coated with the anti-reflection film of 1000nm-1100nm wavelength (transmitance is greater than 99.8%); Modulating frequency is 25KHz, by the density of input radio frequency ripple change adjusting Q crystal, sexually revises the purpose of laserresonator threshold value performance period, plays the Q-switch effect.
Described arsenic acid titanyl potassium KTA crystal 7 is of a size of 5 * 5 * 30mm
3Both ends of the surface all are coated with the anti-reflection film of 1000nm-1100nm wave band (transmitance is greater than 99.8%), and KTA crystal 7 is done the Raman medium fundamental frequency light is converted to Raman light.Its cutting angle is θ=90 degree, φ=0 degree.
The radius of curvature of described Effect of Back-Cavity Mirror 4 is 3000mm, is coated with the anti-reflection film of 808nm pump light and the high-reflecting film (reflectivity is greater than 99.8%) of 1000nm-1100nm wave band.
Described outgoing mirror 8 is coated with near the high-reflecting film (reflectivity is greater than 99.5%) of wavelength 1 micron, and near the light of this film wavelength is 1.09 microns has 13% transmitance.
Described resonant cavity chamber is long to be 92mm.
The pump light that the workflow of laser: LD sends 808nm enters neodymium-doped yttrium-aluminum garnet Nd:YAG crystal 5 through optical fiber 2 and coupled lens group 3, and when acousto-optic Q modulation device 6 was closed, pump light transferred the counter-rotating particle to and stores; When Q switching 6 was opened, a large amount of counter-rotating particles of saving bit by bit transferred 1064.2nm fundamental frequency light to by stimulated radiation moment; When having the fundamental frequency light process KTA crystal 7 of high peak power, because the effect of stimulated Raman scattering transfers the 1091.5nm Raman light to, and by outgoing mirror 8 outputs.Be 8.1W at input LD power, when repetition rate is 25kHz, can obtain the Raman light output of 1.38W.
Embodiment 2:
The utility model device embodiment as shown in Figure 2, comprise laser diode LD side pumping module 10 resonant cavity, resonant cavity is made up of Effect of Back-Cavity Mirror 4 and outgoing mirror 8, and placing gain medium 5-in the resonant cavity successively is Nd:YAG laser crystal and LD side pump module 10, acousto-optic Q modulation switch 6 and KTA crystal 7; The pump light that is produced by LD profile pump source is coupled into gain medium 5, and the fundamental frequency light that is produced is by KTA crystal 7, because KTA crystal 7 has Raman effect, thereby can produce stimulated Raman scattering, produces Raman light.KTA crystal 7 can effectively produce the Raman conversion, obtain 1.09 microns raman lasers as the Raman medium.Above-mentioned Q-switch 6, KTA crystal 7 sides all surround with the metal derby that has pipeline, and the pipeline in the metal derby continues to be connected with recirculated cooling water, are used for reducing temperature to crystal, and water temperature is controlled at 20 degree.
Described laser diode LD side pumping module 10 is that near the 808nm LD side-pump laser head (peak power 180W), driving power and water-cooled case formed by wavelength.
Described neodymium-doped yttrium-aluminum garnet Nd:YAG crystal 5 is of a size of Ф 3mm * 68mm, and its doping content is the anti-reflection film (transmitance is greater than 99.8%) that two end faces of 1-at.% all are coated with the 1000nm-1100nm wave band.
Described acousto-optic Q modulation device 6 is made up of radio frequency input unit and adjusting Q crystal, and the length of adjusting Q crystal is 46mm, and both ends of the surface all are coated with the anti-reflection film of 1000nm-1100nm wave band (transmitance is greater than 99.8%); Modulating frequency is 10KHz, by the density of input radio frequency ripple change adjusting Q crystal, sexually revises the purpose of laserresonator threshold value performance period, plays the Q-switch effect.
Described arsenic acid titanyl potassium KTA crystal 7 is of a size of 5 * 5 * 30mm
3Both ends of the surface all are coated with the anti-reflection film of 1000nm-1100nm wave band (transmitance is greater than 99.8%), and KTA crystal 7 is done the Raman medium fundamental frequency light is converted to Raman light.Its cutting angle is θ=90 degree, φ=0 degree.
Described Effect of Back-Cavity Mirror 4 be flat-convex lens, radius of curvature is-800mm to be coated with the high-reflecting film (reflectivity is greater than 99.8%) of 1000nm-1100nm wavelength.
Described outgoing mirror 8 is level crossings, is coated with near the high-reflecting film (reflectivity is greater than 99.5%) of wavelength 1 micron, and near the light of this film wavelength is 1.09 microns has 13% transmitance.
Described resonant cavity chamber is long to be 180mm.
The workflow of laser: the pump light that 808nm is sent in LD profile pump source incides neodymium-doped yttrium-aluminum garnet Nd:YAG crystal 5, when acousto-optic Q modulation device 6 when closing, pump light transfer to the counter-rotating particle store; When Q switching 6 was opened, a large amount of counter-rotating particles of saving bit by bit transferred 1.064.2nm fundamental frequency light to by stimulated radiation moment; When having the fundamental frequency light process KTA crystal 7 of high peak power, because the effect of stimulated Raman scattering transfers the 1091.5nm Raman light to, and by outgoing mirror 8 outputs.Be 100W at input LD power, when repetition rate is 10kHz, can obtain the Raman light output of 3W.
Embodiment 3:
Identical with embodiment 1, be described resonant cavity be refrative cavity, refrative mirror 11 is coated with the high-reflecting film of 1000nm-1100nm wavelength (reflectivity is greater than 99.8%), Effect of Back-Cavity Mirror 4 and refrative mirror 11 spacing 60mm, refrative mirror 11 and outgoing mirror 8 spacing 40mm.
The workflow of laser: the pump light that 808nm is sent in LD end pumping source enters the Nd:YAG crystal 5 through optical fiber 2 and coupled lens group 3, and when acousto-optic Q modulation device 6 was closed, pump light transferred the counter-rotating particle to and stores; When Q switching 6 was opened, a large amount of counter-rotating particles of saving bit by bit transferred 1064.2nm fundamental frequency light to by stimulated radiation moment; When having the fundamental frequency light process KTA crystal 7 of high peak power, because the effect of stimulated Raman scattering transfers the 1091.5nm Raman light to, and by outgoing mirror 8 outputs.Be 8.1W at input LD power, when repetition rate is 20kHz, can obtain the Raman light output of 1W.
Embodiment 4:
Identical with embodiment 1, the rf wave modulating frequency that is described acousto-optic Q modulation device 6 is 40KHz; The radius of curvature of described Effect of Back-Cavity Mirror 4 is infinitely great; Described gain medium 5 is Nd-doped yttrium vanadate (Nd:YVO
4), its doping content is 0.5%, is of a size of 3mm * 3mm * 8mm.
The workflow of laser: the pump light that 808nm is sent in LD end pumping source enters Nd:YVO through optical fiber and coupled lens
4Crystal 5, when acousto-optic Q modulation device 6 was closed, pump light transferred the counter-rotating particle to and stores; When Q switching 6 was opened, a large amount of counter-rotating particles of saving bit by bit transferred 1064.7nm fundamental frequency light to by stimulated radiation moment; When having the fundamental frequency light process KTA crystal 7 of high peak power, because the effect of stimulated Raman scattering transfers the 1092nm Raman light to, and by outgoing mirror 8 outputs.Be 8.1W at input LD power, when repetition rate is 40kHz, can obtain the Raman light output of 1W.
Embodiment 5:
Identical with embodiment 1, be described gain medium 5 are bonding Nd-doped yttrium vanadate (YVO
4/ Nd:YVO
4), its doping content is 0.5%, is of a size of 3mm * 3mm * 3mm (YVO
4)+3mm * 3mm * 8mm (Nd:YVO
4).
The workflow of laser: the pump light that 808nm is sent in LD end pumping source enters Nd:YVO through optical fiber and coupled lens
4Crystal 5, when acousto-optic Q modulation device 6 was closed, pump light transferred the counter-rotating particle to and stores; When Q switching 6 was opened, a large amount of counter-rotating particles of saving bit by bit transferred 1064.7nm fundamental frequency light to by stimulated radiation moment; When having the fundamental frequency light process KTA crystal 7 of high peak power, because the effect of stimulated Raman scattering transfers the 1092nm Raman light to, and by outgoing mirror 8 outputs.Be 8.1W at input LD power, when repetition rate is 40kHz, can obtain the Raman light output of 1.2W.
Embodiment 6:
Identical with embodiment 1, be that described Q-modulating device 6 is Cr
4+: YAG saturable absorber passive Q-switch, its small-signal transmitance is 90%; The chamber of described resonant cavity is long to be 50mm.
The workflow of laser: the pump light that 808nm is sent in LD end pumping source enters Nd:YVO through optical fiber 2 and coupled lens group 3
4 Crystal 5, when passive Q-adjusted switch 6 cut out, pump light transferred the counter-rotating particle to and stores; When Q switching 6 was opened, a large amount of counter-rotating particles of saving bit by bit transferred 1064.7nm fundamental frequency light to by stimulated radiation moment; When having the fundamental frequency light process KTA crystal 7 of high peak power, because the effect of stimulated Raman scattering transfers the 1092nm Raman light to, and by outgoing mirror 8 outputs.When input LD power is 8.1W, can obtain the Raman light output of 0.6W.
Embodiment 7:
Identical with embodiment 1, just place gain medium 5, KTA crystal 7 and acousto-optic Q-modulating device 6 successively in the resonant cavity.
The workflow of laser: the pump light that 808nm is sent in LD end pumping source enters the Nd:YAG crystal 5 through optical fiber and coupled lens, and when acousto-optic Q modulation switch 6 cut out, pump light transferred the counter-rotating particle to and stores; When Q switching 6 was opened, a large amount of counter-rotating particles of saving bit by bit transferred 1064.2nm fundamental frequency light to by stimulated radiation moment; When having the fundamental frequency light process KTA crystal 7 of high peak power, because the effect of stimulated Raman scattering transfers the 1091.5nm Raman light to, and by outgoing mirror 8 outputs.When input LD power is 8.1W, repetition rate 25kHz, can obtain the Raman light output of 1W.
Embodiment 8:
Identical with embodiment 2, just place acousto-optic Q modulation device 6, LD side pump module 10 and gain medium 5 and KTA crystal 7 successively in the resonant cavity.
The workflow of laser: the pump light that 808nm is sent in LD end pumping source enters the Nd:YAG crystal 5 through optical fiber and coupled lens, and when acousto-optic Q modulation switch 6 cut out, pump light transferred the counter-rotating particle to and stores; When Q switching 6 was opened, a large amount of counter-rotating particles of saving bit by bit transferred 1064.2nm fundamental frequency light to by stimulated radiation moment; When having the fundamental frequency light process KTA crystal 7 of high peak power, because the effect of stimulated Raman scattering transfers the 1091.5nm Raman light to, and by outgoing mirror 8 outputs.When input LD power is 8.1W, repetition rate 10kHz, can obtain the Raman light output of 3.5W.
Embodiment 9:
Identical with embodiment 2, just place LD side pump module 10 and gain medium 5, KTA crystal 7 and acousto-optic Q-modulating device 6 successively in the resonant cavity.
Claims (10)
1. a KTA crystal full solid Raman laser comprises laser diode LD pumping source, resonant cavity, and resonant cavity is made up of Effect of Back-Cavity Mirror and outgoing mirror, it is characterized in that placing in the resonant cavity gain medium, Q-modulating device and KTA crystal; Gain medium, Q-modulating device and KTA crystal carry out temperature control by cooling device to it; The pump light that is produced by the laser diode LD pumping source is coupled into gain medium, the fundamental frequency light that is produced is by the KTA crystal, because the KTA crystal has Raman effect, thereby can produce stimulated Raman scattering, can produce the Raman conversion effectively, obtain 1.09 microns raman lasers, export by outgoing mirror.
2. KTA crystal full solid Raman laser as claimed in claim 1 is characterized in that described laser diode LD pumping source can be LD end pumping source, and it comprises driving power, laser diode, cooling device, optical fiber and coupled lens group; Also can be LD profile pump source, it comprises driving power, LD side pump module, cooling device.
3. KTA crystal full solid Raman laser as claimed in claim 1 is characterized in that described resonant cavity is straight chamber, also can be refrative cavity, and the chamber is long to be 5cm-50cm.
4. as claim 1 and 2 described KTA crystal full solid Raman lasers, it is characterized in that described resonant cavity under LD end pumping situation, the Q-switch in the resonant cavity and the relative position of KTA crystal can be changed; Under LD profile pump situation, the relative position of side pump module in the resonant cavity and gain medium, Q-switch, KTA crystal can be changed mutually.
5. KTA crystal full solid Raman laser as claimed in claim 1 is characterized in that described gain medium can be a kind of in neodymium-doped or the following all crystal of mixing ytterbium: yttrium-aluminium-garnet, vanadic acid yttrium, vanadic acid gadolinium, vanadic acid lutetium, lithium yttrium fluoride, yttrium aluminate, Gd-Ga garnet, wolframic acid gadolinium potassium; Also can be a kind of in bonding crystal yttrium-aluminium-garnet/neodymium-doped yttrium-aluminum garnet, all crystal of vanadic acid yttrium/Nd-doped yttrium vanadate.
6. KTA crystal full solid Raman laser as claimed in claim 1, the doping content that it is characterized in that described gain medium is 0.05-at.% to 3-at.% when neodymium-doped; When mixing ytterbium 0.05-at.% to 10-at.%.
7. KTA crystal full solid Raman laser as claimed in claim 1, two end faces that it is characterized in that described gain medium all are coated with the anti-reflection film to pump light wave band and 1000nm-1100nm wave band.
8. KTA crystal full solid Raman laser as claimed in claim 1 is characterized in that described Q-modulating device can be any one in electric-optically Q-switched device, acousto-optic Q modulation device or the passive Q-adjusted device of saturable absorber.
9. KTA crystal full solid Raman laser as claimed in claim 1 is characterized in that the both ends of the surface of described KTA crystal all are coated with the anti-reflection film of 1000nm-1100nm wavelength.
10. KTA crystal full solid Raman laser as claimed in claim 1 is characterized in that Effect of Back-Cavity Mirror in the described resonant cavity is coated with the anti-reflection film of pump light wave band and is 1000nm-1100nm wave band reflectivity greater than 95% reflectance coating to wavelength; Outgoing mirror is coated with at 1 micron waveband place reflectivity greater than 95% reflectance coating, and this film be that 1.09 microns light has through scope to wavelength is 3%～70% transmissivity.
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| CNU2008200180771U CN201167207Y (en) | 2008-02-28 | 2008-02-28 | Arsenic acid titanium oxygen potassium crystal full-solid Raman laser |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101986480A (en) * | 2009-07-29 | 2011-03-16 | 中国科学院福建物质结构研究所 | Composite self-Raman frequency-doubled yellow laser crystal module |
| CN102044838A (en) * | 2010-11-18 | 2011-05-04 | 苏州生物医学工程技术研究所 | Stimulated Raman sum frequency laser wavelength conversion device |
| CN117578178A (en) * | 2023-12-12 | 2024-02-20 | 重庆师范大学 | Single-bandwidth tuning inner cavity type Raman laser |
-
2008
- 2008-02-28 CN CNU2008200180771U patent/CN201167207Y/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101986480A (en) * | 2009-07-29 | 2011-03-16 | 中国科学院福建物质结构研究所 | Composite self-Raman frequency-doubled yellow laser crystal module |
| CN102044838A (en) * | 2010-11-18 | 2011-05-04 | 苏州生物医学工程技术研究所 | Stimulated Raman sum frequency laser wavelength conversion device |
| CN117578178A (en) * | 2023-12-12 | 2024-02-20 | 重庆师范大学 | Single-bandwidth tuning inner cavity type Raman laser |
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