CN201165565Y - Single crystal permanent magnet field - Google Patents
Single crystal permanent magnet field Download PDFInfo
- Publication number
- CN201165565Y CN201165565Y CNU2008200105732U CN200820010573U CN201165565Y CN 201165565 Y CN201165565 Y CN 201165565Y CN U2008200105732 U CNU2008200105732 U CN U2008200105732U CN 200820010573 U CN200820010573 U CN 200820010573U CN 201165565 Y CN201165565 Y CN 201165565Y
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- magnetic
- magnetic field
- single crystal
- permanent
- yoke
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Abstract
The utility model relates to a permanent magnetic field used for matching a single crystal furnace. The single crystal permanent magnetic field is composed of two magnetic systems which are respectively fixed on yoke boards, and the two yoke boards are connected together via the magnetic conducting board; the yoke boards are fixed on the upright column and are arranged at the both sides of the single crystal furnace to cause the centre of the magnetic systems and the position of the furnace crystal on an identical line, and the two magnetic systems are opposite mutually, to form a semi-encircled shape with the yoke board and the magnetic conducting board. The permanent magnetic field can replace the single crystal electromagnetic field, the magnetic field intensity keeps at 1200 Gs, the process parameter can be ensured when the polysilicon is crystallized as the single crystal, and the permanent magnetic field can be used for the single crystal furnace with the diameter of the furnace chamber of 800 mm and above 800 mm. Compared with the electromagnetic field, the permanent magnetic field has the advantages that the energy is saved, the energy can not be wasted in the working process, the permanent magnetic field is maintenance-free, no fault is caused during the working process and no noise pollution exists.
Description
One, technical field
The utility model relates to a kind of apparatus for manufacturing single silicon crystal, particularly with the supporting magnetic field means of single crystal growing furnace.
Two, background technology
Along with the fast development of China's scientific and technological level, semiconductor silicon material is used more and more widely, and requires more and more higher to the performance perameter of silicon materials.In monocrystalline silicon production, by to the single crystal growing furnace externally-applied magnetic field, make the magnetic field force induced effect of liquid-state silicon reduce convection current, doping elements is evenly distributed, and semi-conductive processing parameter has obtained obvious improvement.Use electromagnetic field at present, magneticstrength is adjustable continuously, generally works under the condition of 1000～1200Gs in magnetic field, and not obvious to semi-conductive parameter role when magnetic field is higher than 1200Gs, magnetic field is inoperative when being lower than 1000Gs.Because it is narrower to be fit to the magneticstrength scope of monocrystalline silicon production, the regulation range major part of electromagnetic field does not all have practical significance, and the electromagnetic field cost is higher, complex structure, and power consumption is big, and noise is arranged, and needs to safeguard.In fact, when magneticstrength can reach requirement and field strength range and do not need to adjust, can adopt permanent magnet that magnetic field is provided under the condition that site space allows again,, reduce investment and safeguard, reduce noise pollution to save electric energy.
Three, summary of the invention
The purpose of this utility model provides a kind of monocrystalline permanent magnetic field that semiconductor silicon is produced that is used for, and with the performance perameter of raising silicon materials, and minimizing equipment drops into reduction working cost and sound pollution.The technical solution adopted in the utility model is: the monocrystalline permanent magnetic field is made of two magnetic systems that are separately fixed on the yoke plate, and two yoke plates link together through magnetic conductive board.Yoke plate is fixed on the column, is installed in the single crystal growing furnace both sides, and making magnetic is that the center is concordant with the body of heater crystallization position, and two magnetic system partly encloses shape with yoke plate, magnetic conductive board formation relatively.Magnetic system is made of a plurality of compact arranged permanent magnets, magnetic be area greater than the crystalline areas in the stove, crystal all is in the action of a magnetic field scope.The plane is concordant with plane in the stove main chamber on the yoke plate, and the stove concubine can be shifted out, and rise the back and screws out the main chamber.Magnetic conductive board stays certain space to be convenient to overhaul of the equipments and taking-up monocrystalline in furnace chamber back and body of heater.
The utility model applies to the production field of semiconductor silicon with permanent magnetic field, polysilicon is recrystallised to after fusing in the monocrystalline process adding improves the semiconductor silicon processing parameter under the situation of permanent magnetic field, changes 3 valencys and 5 valency elements distribute in semiconductor silicon.Compare with electromagnetic field, the utility model does not consume energy, and is non-maintaining, and trouble free in the working process does not have noise pollution.
Four, description of drawings
Fig. 1 is a front view of the present utility model;
Fig. 2 is a vertical view of the present utility model;
Fig. 3 binds composition for magnetic of the present utility model.
Five, embodiment
Magnetic of the present utility model is 4 to be fixed on the yoke plate 3, and two yoke plates 3 link together through magnetic conductive board 1, and magnetic is 4, yoke plate 3 and magnetic conductive board 1 constitute " C " shape structure.Be installed on the column 2 below two yoke plates 3, two magnetic are the 4 parallel both sides, body of heater main chamber that are positioned at, and magnetic field is transverse magnetic field, and the parallel material district, main chamber of passing of magnetic line of force constitutes the loop line through yoke plate 3, magnetic conductive board 1 again.Magnetic is 4 for monopolar configuration, and magnetic pole adopts the rare-earth Nd-Fe-B material, magnet arrange between row and the row, row and be listed as between be and repel each other.Magnetic is that 4 cross sections are square, and yoke plate 3 cross sections are approximate square, and yoke plate 3 areas are that magnetic is 1.7 times of 4 areas, with leakage field around assurance central magnetic field value and the minimizing equipment.Magnetic system cover 5 covers on magnetic and fastens, and liquid corrosion magnetic such as anti-sealing and water vapor are the permanent magnet in 4.Yoke plate 3 enough thick (yoke plate 3 thickness are that magnetic is 0.15 times of the 4 cross section length of sides), magnet does not demagnetize.Two magnetic are 4 central magnetic field intensity 1200Gs, can guarantee the processing parameter of polysilicon when crystallization is monocrystalline.Magnetic is 4 for fixed, does not move.Can be used on the above single crystal growing furnace of diameter 800mm of stove main chamber and 800mm.Magnetic is that the permanent magnet in 4 is to be to pack into after the collaring iron shield above 4 at magnetic, and both sides are fixed with door-plate.
Claims (3)
1, a kind of monocrystalline permanent magnetic field is characterized in that: it is made of two the magnetic systems (4) that are separately fixed on the yoke plate (3), and two yoke plates (3) link together through magnetic conductive board (1); Yoke plate (3) is fixed on the column (2), is installed in the single crystal growing furnace both sides, makes magnetic system (4) center concordant with the body of heater crystallization position, and two magnetic systems (4) are relative, form with yoke plate (3), magnetic conductive board (1) and partly enclose shape.
2. monocrystalline permanent magnetic field according to claim 1, it is characterized in that: magnetic system (4) is made of a plurality of compact arranged permanent magnets, permanent magnet adopts the rare-earth Nd-Fe-B material, magnetic system (4) area is greater than the crystalline areas in the stove, (4) the central magnetic field intensity 1200Gs of two magnetic system, magnetic system (4) is fixed.
3. monocrystalline permanent magnetic field according to claim 1 is characterized in that: yoke plate (3) area is 1.7 times of magnetic system (4) area; Yoke plate (3) thickness is 0.15 times of magnetic system (4) cross section length of side.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2008200105732U CN201165565Y (en) | 2008-02-01 | 2008-02-01 | Single crystal permanent magnet field |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2008200105732U CN201165565Y (en) | 2008-02-01 | 2008-02-01 | Single crystal permanent magnet field |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201165565Y true CN201165565Y (en) | 2008-12-17 |
Family
ID=40190950
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNU2008200105732U Expired - Lifetime CN201165565Y (en) | 2008-02-01 | 2008-02-01 | Single crystal permanent magnet field |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201165565Y (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102560680A (en) * | 2012-01-04 | 2012-07-11 | 宁波大学 | Research device for interfering with growth of complex crystal by using focusing strong magnetic field |
| CN117822126A (en) * | 2024-03-02 | 2024-04-05 | 山东华特磁电科技股份有限公司 | Magnetic crystal pulling permanent magnet device |
-
2008
- 2008-02-01 CN CNU2008200105732U patent/CN201165565Y/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102560680A (en) * | 2012-01-04 | 2012-07-11 | 宁波大学 | Research device for interfering with growth of complex crystal by using focusing strong magnetic field |
| CN117822126A (en) * | 2024-03-02 | 2024-04-05 | 山东华特磁电科技股份有限公司 | Magnetic crystal pulling permanent magnet device |
| CN117822126B (en) * | 2024-03-02 | 2024-06-04 | 山东华特磁电科技股份有限公司 | Magnetic crystal pulling permanent magnet device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: FUSHUN LONGJI ELECTROMAGNETIC SCIENCE CO., LTD. Free format text: FORMER OWNER: FUSHUN LONGJI MAGNET CO., LTD. Effective date: 20090612 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20090612 Address after: Liaoning province Fushun City SHUNFA Road Economic Development Zone No. 82, zip code: 113122 Patentee after: Fushun LONGI Magnet Co., Ltd. Address before: Liaoning province Fushun City SHUNFA Road Economic Development Zone No. 82, zip code: 113122 Patentee before: Fushun Longji Magnet Co., Ltd. |
|
| C56 | Change in the name or address of the patentee |
Owner name: SHENYANG LONGI MAGNET CO., LTD. Free format text: FORMER NAME: FUSHUN LONGI MAGNET CO., LTD. |
|
| CP01 | Change in the name or title of a patent holder |
Address after: 113122 Liaoning province Fushun SHUNFA Road Economic Development Zone No. 82 Patentee after: Longi Magnet Co., Ltd. Address before: 113122 Liaoning province Fushun SHUNFA Road Economic Development Zone No. 82 Patentee before: Fushun LONGI Magnet Co., Ltd. |
|
| CX01 | Expiry of patent term |
Granted publication date: 20081217 |
|
| CX01 | Expiry of patent term |