CN102560680A - Research device for interfering with growth of complex crystal by using focusing strong magnetic field - Google Patents
Research device for interfering with growth of complex crystal by using focusing strong magnetic field Download PDFInfo
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- CN102560680A CN102560680A CN2012100227393A CN201210022739A CN102560680A CN 102560680 A CN102560680 A CN 102560680A CN 2012100227393 A CN2012100227393 A CN 2012100227393A CN 201210022739 A CN201210022739 A CN 201210022739A CN 102560680 A CN102560680 A CN 102560680A
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Abstract
The invention relates to a research device for interfering with the growth of a complex crystal by using a focusing strong magnetic field, belongs to the field of complex crystal growth, and aims to solve the problem that the conventional electromagnet strong magnetic system supported by high current cannot actually used for a highly time-consuming experiment for interfering with the growth of the complex crystal by using the strong magnetic field due to high consumption of electric energy and a cooling agent. According to the device, a permanent magnet is taken as a magnetic source, the focusing strong magnetic field is formed at a magnetic gap structural position by bunching a magnetic force line, and the experiment for interfering with the growth of the complex crystal by using the strong magnetic field is performed. By the device, the defect that the electromagnet strong magnetic system has high consumption of the electric energy and the cooling agent is overcome, and researchers can carry out the large-time-span research work of interfering with the growth of the complex crystal by using the strong magnetic field on the premise of low cost.
Description
Technical field
The present invention relates to a kind of utilization focusing high-intensity magnetic field intervention complex crystal Study on Growth and use device, belong to the complex crystal cultivation field.
Background technology
Research work such as synthetic exploration, structural analysis and the applicating evaluating thereof of complex crystal have double meaning; On the one hand; Help further in depth to seek the related science rule; On the other hand, some new type functional crystalline material with potential application foreground also is expected to be able in this course disclose.
In this type research, the solvent evaporation method under room temperature or the nearly room temperature condition is given priority to because of its gentle mode usually.
Above-mentioned solvent evaporation method experiment only relates to several milliliters to tens of milliliters a kind of so less amounts of reactants of filtering reaction solution usually, certainly, also can be the amounts of reactants that arrives one milliliter of less than less.Synthesis step substantially is; To place respectively by each filtering reaction solution of design preparation in different cup-shapeds or the small cup shape vessel earlier, then, said vessel left standstill; Solvent in the said vessel is via slow volatilization; React gradually, concentrate and and then form relevant complex crystal, afterwards, resulting complex crystal is used to do further physico-chemical analysis and evaluation.
In the above-mentioned heuristic process of time and effort consuming ground unfolded; The most breathtaking no more than finding to have the complex crystal material young plant of potential value by accident at aspects such as electricity, light, sound, magnetic; Yet this case the contriver notice, in fact; There is its discovery chance of complex crystal material young plant of potential value rare, rare, just like pin is sought at the deep-sea.Trace it to its cause; Be that the experimental technique that in above-mentioned synthetic heuristic process, adopted of general scientific experiment chamber is all too extensive; Do not have introducing to help to cultivate the extra auxiliary guiding factor that the complex crystal material young plant of potential value is arranged at aspects such as electricity, light, sound, magnetic, this makes the target crystalline seek inefficiency.
Electricity, light, sound, magnetic etc. any aspect even the complex small crystal of a specific manifestations is only arranged all is precious crystalline material young plant, all be to be worth the scientific research target compound of making great efforts to seek.
Intervening the growth of complex crystal through magnetic field, is the external field evoked mode of a said scientific research target compound of the sensing that merits attention.Because a kind of like this complex crystal growth method of solvent evaporation method under related room temperature of this case or the nearly room temperature condition, its crystal growing process is longer, and its crystal growing process possibly need time a couple of days to a few weeks longer; On such time scale, the strong magnetic system of electro-magnet that existing support strong current supports is because excessive, the overlong time of power consumption; Carry out intervention experiment and can't actually drop into to the match crystal bulk-growth; Especially, if adopt superconducting magnet, also will be in large quantities, the liquid nitrogen or the liquid helium of the usefulness of plenum system cooling for a long time; Research cost is higher to can't actual degree of carrying out said intervention experiment; Just because of this, thisly intervene the work of complex crystal Study on Growth for a long time, be difficult to launch with high-intensity magnetic field.
So, how can both avoid the high flow rate of described electric energy and the high flow rate of liquid nitrogen or liquid helium, and can launch high-intensity magnetic field again at low cost to the work of match crystal bulk-growth Research of interference, just becoming one has technical problem to be solved.
Summary of the invention
Technical problem to be solved by this invention is; Research and develop a kind of device; This device should help to reach such target; Just, should avoid the high flow rate of described electric energy and the high flow rate of liquid nitrogen or liquid helium, can let the researchist carry out high-intensity magnetic field to the work of match crystal bulk-growth Research of interference under the prerequisite cheaply again.
The present invention solve the technical problem through following scheme, and this scheme provides a kind of utilization to focus on high-intensity magnetic field intervention complex crystal Study on Growth and uses device, and the structure of this device comprises a permanent magnet; That this permanent magnet is is tabular, bulk or column; This permanent magnet has two magnetic poles, and two its positions of magnetic pole of this permanent magnet correspond respectively to two surface locations of this permanent magnet, and; Two magnetic conduction arms; This its constituent material of magnetic conduction arm is a soft magnetic material, and this its profile of magnetic conduction arm is L-shaped, C shape or U-shaped, a magnetic pole applying of an end of each magnetic conduction arm and said permanent magnet be linked together; Its profile of an end of the remainder of each magnetic conduction arm is cone-shaped, and said its profile from two said magnetic conduction arms is the contiguous each other magnetic gap structure that forms in pyramidal two terminations respectively.This magnetic gap locations of structures presents the structural form in a neutral or space.Based on the magnetic circuit principle, magneticline of force becomes than comparatively dense in said magnetic gap locations of structures, thus, has formed one in this magnetic gap locations of structures and has passed through the high-intensity magnetic field that focuses on.
The structure of this device certainly comprises the vessel that are used for the match crystal bulk-growth of the discous or cup-shaped that is positioned over this magnetic gap locations of structures.
Its material of said permanent magnet can be any one permanent magnet material well known in the prior art.About permanent magnet, its art-recognized meanings is known.
Said permanent magnet certainly is the Nd-Fe-B permanent magnet of best performance.
Yet, from low-cost a kind of option of making this device, select hard ferrite for use, also allow.Said hard ferrite, its art-recognized meanings is known.
Said soft magnetic material, its art-recognized meanings is known.There is multiple soft magnetic material commercially available.
Said soft magnetic material, preferred pure iron material.
The opening end position of the vessel that are used for the match crystal bulk-growth of or cup-shaped discous at this can be coated with organic polymer thin film, offers more than one hole on this organic polymer thin film.The quantity in said cavity is not limit; The diameter in said cavity is not limit.Said cavity is as solvent evaporates, escape route.The quantity in cavity, the size of empty diameter can be set according to real crystal growth system, are used to control crystal growth rate.
This apparatus structure can also comprise the support that is used for fixing the magnetic conduction arm.Said support not necessarily.
The structure of this device can also comprise the dw that whole crystal cultivation region is coated.Said dw not necessarily.
The structure of this device can also comprise the bottom supports that whole magnetic structure parts are lifted; This leg is used for built on stilts said magnetic structure parts, prevents chemical solution contact, the said magnetic structure parts of corrosion.Said leg not necessarily.
The structure of this device can also comprise antirust coating structure or the similar antirust insulation layer structure that is coated on magnetic conduction arm and permanent magnet appearance.Said antirust coating structure or similar antirust insulation layer structure are not necessarily.
Advantage of the present invention is to utilize permanent magnet as magnetic source, based on the magnetic circuit principle; Magneticline of force is carried out pack; Thus, in said magnetic gap locations of structures, formed one and passed through the high-intensity magnetic field that focuses on; Cultivate vessel at this position of sound production crystal; Carry out the complex crystal high-intensity magnetic field and intervene growth experiment, this case device has been avoided high flow rate and the high flow rate of liquid nitrogen or liquid helium of the electric energy of the strong magnetic system of said electro-magnet, and this case can let the researchist carry out high-intensity magnetic field to the work of match crystal bulk-growth Research of interference under the prerequisite cheaply.
Description of drawings
Fig. 1 is this case embodiment core texture synoptic diagram.
Among the figure, the 1st, permanent magnet, 2,6 is respectively two magnetic conduction arms, 3,5 is respectively that its profiles of two magnetic conduction arms is pyramidal termination, the 4th, be positioned over the vessel that are used for the match crystal bulk-growth of the discous or cup-shaped of magnetic gap locations of structures.
Embodiment
In this case embodiment that Fig. 1 showed, the structure of this device comprises a permanent magnet 1, and that permanent magnet 1 is is tabular, bulk or column; Permanent magnet 1 has two magnetic poles, and two its positions of magnetic pole of permanent magnet 1 correspond respectively to two surface locations of permanent magnet 1, and; Two magnetic conduction arms, these two magnetic conduction arms are respectively magnetic conduction arm 2 and magnetic conduction arm 6, and magnetic conduction arm 2 and magnetic conduction arm 6 its constituent materials all are soft magnetic materials; The profile of magnetic conduction arm 2 and magnetic conduction arm 6 is L-shaped, C shape or U-shaped; In this legend structure, an end of magnetic conduction arm 2 and the N utmost point of permanent magnet 1 fit be linked together, an end of magnetic conduction arm 6 and the applying of the S utmost point of permanent magnet 1 be linked together; A termination 3 its profiles of the remainder of magnetic conduction arm 2 are cone-shaped; A termination 5 its profiles of the remainder of magnetic conduction arm 6 also are cone-shaped, and it is contiguous each other with termination 5 all to be pyramidal termination 3, forms the magnetic gap structure.
In this legend structure, comprise the vessel that are used for the match crystal bulk-growth 4 of the discous or cup-shaped that is positioned over this magnetic gap locations of structures.
In the legend, do not draw other annex that this specification sheets preamble is addressed.Said other annex, all not necessarily.
The embodiment of this case is not limited to the legend mode.
Claims (6)
1. utilize the focusing high-intensity magnetic field to intervene the complex crystal Study on Growth and use device; The structure of this device comprises a permanent magnet, and that this permanent magnet is is tabular, bulk or column, and this permanent magnet has two magnetic poles; Two its positions of magnetic pole of this permanent magnet correspond respectively to two surface locations of this permanent magnet; And, two magnetic conduction arms, this its constituent material of magnetic conduction arm is a soft magnetic material; This its profile of magnetic conduction arm is L-shaped, C shape or U-shaped; One end of each magnetic conduction arm and a magnetic pole of said permanent magnet fit be linked together, its profile of an end of the remainder of each magnetic conduction arm is cone-shaped, said its profile from two said magnetic conduction arms is pyramidal two terminations contiguous each other formation magnetic gap structure respectively.
2. utilization according to claim 1 focuses on high-intensity magnetic field intervention complex crystal Study on Growth and uses device, it is characterized in that, is placed with the vessel that are used for the match crystal bulk-growth of discous or cup-shaped in this magnetic gap locations of structures.
3. utilization according to claim 1 focuses on high-intensity magnetic field intervention complex crystal Study on Growth and uses device, it is characterized in that its material of said permanent magnet is a Nd-Fe-B permanent magnet.
4. utilization according to claim 1 focuses on high-intensity magnetic field intervention complex crystal Study on Growth and uses device, it is characterized in that its material of said permanent magnet is a hard ferrite.
5. utilization according to claim 1 focuses on high-intensity magnetic field intervention complex crystal Study on Growth and uses device, it is characterized in that said soft magnetic material is the pure iron material.
6. utilization according to claim 2 focuses on high-intensity magnetic field intervention complex crystal Study on Growth and uses device; It is characterized in that; The opening end position of the vessel that are used for the match crystal bulk-growth of or cup-shaped discous at this is coated with organic polymer thin film; And, offer more than one hole on this organic polymer thin film.
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| CN2012100227393A CN102560680A (en) | 2012-01-04 | 2012-01-04 | Research device for interfering with growth of complex crystal by using focusing strong magnetic field |
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| CN2012100227393A CN102560680A (en) | 2012-01-04 | 2012-01-04 | Research device for interfering with growth of complex crystal by using focusing strong magnetic field |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110965117A (en) * | 2019-12-21 | 2020-04-07 | 郑州工程技术学院 | Constant temperature breeding device suitable for experimental study of complex crystal |
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| WO2002013209A2 (en) * | 2000-08-03 | 2002-02-14 | Sanei Kasei Co., Limited | Nanocomposite permanent magnet |
| CN2624946Y (en) * | 2003-06-30 | 2004-07-14 | 齐连宝 | Circuit device comprising wide air gap and magnetizer |
| JP4099777B2 (en) * | 2004-03-08 | 2008-06-11 | 国立大学法人岩手大学 | Method for producing conductive organic thin film |
| CN201165565Y (en) * | 2008-02-01 | 2008-12-17 | 抚顺隆基磁电设备有限公司 | Single crystal permanent magnet field |
| CN101423975A (en) * | 2008-10-21 | 2009-05-06 | 宁波大学 | Experimental device for surveying influence of additional external field to complex small crystal growth |
| CN101423974A (en) * | 2008-10-21 | 2009-05-06 | 宁波大学 | Evaluation device of complex small crystal synthesis under magnetic field condition |
| CN101423973A (en) * | 2008-10-21 | 2009-05-06 | 宁波大学 | Experimental device applying to researching intervention of magnetic field conditional for complex crystallization |
| CN201670889U (en) * | 2009-12-10 | 2010-12-15 | 嘉兴市中科光电科技有限公司 | MCZ permanent magnetic field device with adjustable magnetic pole spacing |
| CN201749758U (en) * | 2010-07-07 | 2011-02-16 | 赵燕京 | External magnetizer for V-shaped step arrangement of circular pipeline magnetism |
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2012
- 2012-01-04 CN CN2012100227393A patent/CN102560680A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002013209A2 (en) * | 2000-08-03 | 2002-02-14 | Sanei Kasei Co., Limited | Nanocomposite permanent magnet |
| CN2624946Y (en) * | 2003-06-30 | 2004-07-14 | 齐连宝 | Circuit device comprising wide air gap and magnetizer |
| JP4099777B2 (en) * | 2004-03-08 | 2008-06-11 | 国立大学法人岩手大学 | Method for producing conductive organic thin film |
| CN201165565Y (en) * | 2008-02-01 | 2008-12-17 | 抚顺隆基磁电设备有限公司 | Single crystal permanent magnet field |
| CN101423975A (en) * | 2008-10-21 | 2009-05-06 | 宁波大学 | Experimental device for surveying influence of additional external field to complex small crystal growth |
| CN101423974A (en) * | 2008-10-21 | 2009-05-06 | 宁波大学 | Evaluation device of complex small crystal synthesis under magnetic field condition |
| CN101423973A (en) * | 2008-10-21 | 2009-05-06 | 宁波大学 | Experimental device applying to researching intervention of magnetic field conditional for complex crystallization |
| CN201670889U (en) * | 2009-12-10 | 2010-12-15 | 嘉兴市中科光电科技有限公司 | MCZ permanent magnetic field device with adjustable magnetic pole spacing |
| CN201749758U (en) * | 2010-07-07 | 2011-02-16 | 赵燕京 | External magnetizer for V-shaped step arrangement of circular pipeline magnetism |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110965117A (en) * | 2019-12-21 | 2020-04-07 | 郑州工程技术学院 | Constant temperature breeding device suitable for experimental study of complex crystal |
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Application publication date: 20120711 |