CN206570432U - Monocrystal permanent magnetic field - Google Patents

Abstract

The utility model discloses a kind of monocrystal permanent magnetic field, the monocrystal permanent magnetic field is made up of support and the magnetic conductive board being fixed thereon, two yoke plates and two magnetic systems, two magnetic systems are separately fixed on two yoke plates, two yoke plates are connected by magnetic conductive board, two magnetic systems are oppositely disposed in single crystal growing furnace both sides, magnetic system center is flushed with single crystal growing furnace main chamber crystallization position, and magnetic system, yoke plate and magnetic conductive board constitute C-shaped and partly enclose shape.The utility model applies to permanent magnetic field the production field of semiconductor silicon, polysilicon is recrystallised to during monocrystalline the raising semiconductor silicon technological parameter in the case of additional permanent magnetic field after being melted down, changes the distribution of trivalent and 5 valency elements in semiconductor silicon.Compared with electromagnetic field, the consumption of the utility model energy free, energy-conserving and environment-protective, without noise pollution, fault-free in work is non-maintaining.

Description

Monocrystal permanent magnetic field

First, technical field

The utility model is related to a kind of unmelted polycrystalline silicon purification apparatus for manufacturing single silicon crystal, is and monocrystalline

The matching used horizontal permanent magnetism field device of stove.

2nd, background technology

As country is to the increasingly mature of the support of photovoltaic industry and photovoltaic industry.The application of the silicon materials such as monocrystalline silicon is increasingly Extensively, and to the performance requirement of single crystal silicon material also more and more higher.In monocrystalline silicon production, by the additional magnetic of single crystal growing furnace , make the magnetic field force induced effect of liquid-state silicon, reduction convection phenomena makes the Elemental redistribution of doping evenly, the performance of single crystal silicon material Significantly improved.Using single-crystal electromagnetic field equipment, magnetic field intensity is adjustable more in the market.By using, it has been found that for not Same material, general magnetic field is in 800 ~ 1500Gs, and magnetic fields effect is obvious.Magnetic field is higher than after 1500 Gs, magnetic fields effect Change smaller；And during less than 800 Gs, magnetic fields effect does not have substantially.Due to be adapted to monocrystalline silicon production magnetic field range compared with Small, the regulatory function of single-crystal electromagnetic field loses meaning completely.Because single-crystal electromagnetic field production and use cost are higher, internal structure Complexity, power consumption is big, and coil has noise, and periodic maintenance is needed when using.Therefore, the feelings that need not be adjusted are determined in magnetic field intensity Under condition, single-crystal electromagnetic field can be replaced using monocrystalline permanent magnet completely, electric energy, reduction operation and later maintenance expense can be saved With reduction noise pollution.

3rd, the content of the invention

The purpose of this utility model is to provide a kind of monocrystal permanent magnetic field for being used to after unmelted polycrystalline silicon purify monocrystalline silicon production Equipment, to improve the performance of single crystal silicon material, and reduces equipment investment, reduction operating cost and noise pollution.

To achieve the above object, the technical solution adopted in the utility model is：The monocrystal permanent magnetic field is by support and is fixed on Magnetic conductive board, two yoke plates and two magnetic systems thereon are constituted, and are characterized in：Two magnetic systems are separately fixed on two yoke plates, and two yoke plates pass through Magnetic conductive board is connected, and two magnetic systems are oppositely disposed in single crystal growing furnace both sides, and magnetic system center is flushed with single crystal growing furnace main chamber crystallization position, magnetic system, Yoke plate and magnetic conductive board constitute C-shaped and partly enclose shape.

The utility model applies to permanent magnetic field the production field of semiconductor silicon, polysilicon is recrystallised to list after being melted down Semiconductor silicon technological parameter is improved during crystalline substance in the case of additional permanent magnetic field, changes trivalent and 5 valency elements in semiconductor silicon Distribution.Compared with electromagnetic field, the consumption of the utility model energy free, energy-conserving and environment-protective, without noise pollution, fault-free in work, It is non-maintaining.

4th, illustrate

Fig. 1 is structural representation of the present utility model；

Fig. 2 is Fig. 1 top view；

Fig. 3 is the structural representation of the utility model magnetic system；

Fig. 4 is Fig. 3 side view.

5th, embodiment

As shown in Figure 1, 2, the utility model is by support 1 and the magnetic conductive board being fixed thereon 2, two yoke plates 3 and the structure of two magnetic system 4 Into.Two magnetic systems 4 are separately fixed on two yoke plates 3, and two yoke plates 3 are connected by magnetic conductive board 2.Two magnetic systems 4 are relative, parallel positioned at monocrystalline The both sides of stove 5, the center of magnetic system 4 is flushed with the main chamber's crystallization position of single crystal growing furnace 5.Magnetic system 4, yoke plate 3 and magnetic conductive board 2 constitute C-shaped and partly enclose shape Shape.The area of magnetic system 4 is more than the main chamber's crystallization position crystalline areas of single crystal growing furnace 5, crystal is all in the range of magnetic fields.Yoke plate Plane makes the main chamber of single crystal growing furnace 5 be screwed out after rising, the concubine of single crystal growing furnace 5 can be removed less than plane in the main chamber of single crystal growing furnace 5 on 3.Magnetic conduction Plate 2 leaves certain space behind or below single crystal growing furnace 5 with single crystal growing furnace 5 to be easy to overhaul of the equipments, takes out monocrystalline silicon and addition polycrystalline Silicon materials.Magnetic conductive board 2 and yoke plate 3 are made of the low remanent magnetism material of high magnetic conduction, to reduce magnetic resistance, leakage field and remanent magnetism.Two magnetic systems 4 It can fix one movable or double fixed for dual-active dynamic formula, one, used in main chamber diameter 500mm and more than 500mm single crystal growing furnace 5 On.The section of magnetic system 4 is square, and the section of yoke plate 3 is approximating square, and the area of yoke plate 3 is 1.7 times of the area of magnetic system 4, to ensure Leakage field around central magnetic field intensity and reduction equipment.Yoke plate 3 is sufficiently thick, and its thickness is 0.15 times of the section length of side of magnetic system 4, it is ensured that Magnetic system is not demagnetized.The central magnetic field intensity of two magnetic system 4 is 800-1500GS, to ensure that technique of the polysilicon when crystallization is monocrystalline will Ask.

As shown in Figure 3,4, magnetic system 4 be monopolar configuration, two opposite polarities of magnetic system 4, i.e., one be N poles, another is S Pole, can make to form uniform horizontal magnetic field between two magnetic systems 4 using this kind of structure, magnetic induction line parallel across the material area of single crystal growing furnace 5, Again closed magnetic field is constituted by yoke plate 3, magnetic conductive board 2.Magnetic system 4 is by non-magnetic stainless steel box body 7 and multiple by rare-earth Nd-Fe-B material Expect that the square magnet 6 being made is constituted, square magnet 6 is arranged by ranks, multilayer accumulation is arranged in non-magnetic stainless steel box body 7. The arrangement of square magnet 6 is attracting between layers to go between row, repelling each other between the column and the column.The outside of magnetic system 4 is provided with non-magnetic Stainless steel cage 8, to protect magnetic system 4, prevents the square magnet 6 in the liquid corrosion such as water and vapor magnetic system 4, also simultaneously Beauty function can be played.

Claims (10)

1. a kind of monocrystal permanent magnetic field, by support（1）And the magnetic conductive board being fixed thereon（2）, two yoke plates（3）With two magnetic systems（4）Structure Into, it is characterized in that：Two magnetic systems（4）It is separately fixed at two yoke plates（3）On, two yoke plates（3）Pass through magnetic conductive board（2）Connection, two magnetic systems （4）It is oppositely disposed in single crystal growing furnace（5）Both sides, magnetic system（4）Center and single crystal growing furnace（5）Main chamber's crystallization position is flushed, magnetic system（4）, yoke Plate（3）And magnetic conductive board（2）Constitute C-shaped and partly enclose shape.

2. monocrystal permanent magnetic field according to claim 1, it is characterized in that：Magnetic system（4）For monopolar configuration, two magnetic systems（4）Pole Property on the contrary, i.e. one be N poles, another be S poles.

3. monocrystal permanent magnetic field according to claim 1 or 2, it is characterized in that：Magnetic conductive board（2）And yoke plate（3）Using high magnetic conduction Low remanent magnetism material is made.

4. monocrystal permanent magnetic field according to claim 1 or 2, it is characterized in that：Two magnetic systems（4）Fixed for dual-active dynamic formula, one One is movable or double fixed.

5. monocrystal permanent magnetic field according to claim 1 or 2, it is characterized in that：Yoke plate（3）Area is magnetic system（4）The 1.7 of area Times；Yoke plate（3）Thickness is magnetic system（4）0.15 times of the section length of side.

6. monocrystal permanent magnetic field according to claim 1 or 2, it is characterized in that：Two magnetic systems（4）Between form uniform horizontal magnetic , magnetic induction line is parallel across single crystal growing furnace（5）Material area, then by yoke plate（3）, magnetic conductive board（2）Constitute closed magnetic field.

7. monocrystal permanent magnetic field according to claim 1 or 2, it is characterized in that：Magnetic system（4）By non-magnetic stainless steel box body（7） And multiple square magnets being made up of rare-earth Nd-Fe-B material（6）Constitute, square magnet（6）Arranged by ranks, multilayer accumulates cloth Put in non-magnetic stainless steel box body（7）It is interior.

8. monocrystal permanent magnetic field according to claim 7, it is characterized in that：Square magnet（6）Arrangement for row row between, row Repel each other between row, it is attracting between layers.

9. monocrystal permanent magnetic field according to claim 1 or 2, it is characterized in that：Magnetic system（4）Outside is provided with non-magnetic stainless steel cage （8）.

10. monocrystal permanent magnetic field according to claim 1 or 2, it is characterized in that：Two magnetic systems（4）Central magnetic field intensity is 800- 1500GS。