CN201075390Y - Photoreception crystal plate packaging module - Google Patents
Photoreception crystal plate packaging module Download PDFInfo
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- CN201075390Y CN201075390Y CNU2007200552534U CN200720055253U CN201075390Y CN 201075390 Y CN201075390 Y CN 201075390Y CN U2007200552534 U CNU2007200552534 U CN U2007200552534U CN 200720055253 U CN200720055253 U CN 200720055253U CN 201075390 Y CN201075390 Y CN 201075390Y
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48471—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area being a ball bond, i.e. wedge-to-ball, reverse stitch
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16195—Flat cap [not enclosing an internal cavity]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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Abstract
The utility model pertains to the technical field of electronic devices and relates to a photosensitive wafer encapsulation module for encapsulating the photosensitive wafer, solving the problem that the prior art has gold thread that is too long and extrudes upwards, and adjacent gold threads are vulnerable to be damaged and shorted out. The photosensitive wafer encapsulation module for encapsulating the photosensitive wafer comprises an encapsulating body (1), a concave cavity (2) that is arranged on the encapsulating body (1) and a photosensitive wafer (3) that is arranged in the concave cavity (2); a photosensitive wafer upper surface (4) is provided with a photosensitive area (5) and a welding pad (6); the encapsulating body is positioned on a top face (7) of the concave cavity circumference, and the top face is provided with a plurality of welding pieces (8); the bottom face of the encapsulating body is adhered with electrode pieces (9) that are electrically connected with the welding pieces correspondingly; the depth of the concave cavity is designed to lead the upper surface of the photosensitive wafer in the concave cavity to be leveled with the welding pieces; the welding pad, which is relative to the photosensitive wafer and the welding pieces, is provided with metal lines (10) that are parallel welded; the outer circumference of the photosensitive area is provided with mucilage glue (11), which is provided with a light permeable piece that covers the photosensitive area.
Description
Technical field
The utility model belongs to technical field of electronic devices, is a kind of sensitization wafer package module that the sensitization wafer is encapsulated.
Background technology
In Chinese patent literature, the patent No. 200420065567.9, name is called the structure of integrated circuit (IC) wafer and adorns the structure dress that discloses a kind of integrated circuit (IC) wafer in the utility model patent specification, wherein openly mentioned before application, as shown in fig. 1, the structure of existing integrated circuit (IC) wafer is equipped with a supporting body 1, one room 2, this room has an opening 3, and the periphery of this opening 3 is arranged with most weld pads 4; One wafer 5 is fixedly arranged in this room 2; Most bonding wires 6 electrically connect weld pad 4 and this wafer 5 on this supporting body respectively; One adhesive thing 7 is distributed in this opening 3 peripheries; One hides 8, affixed with this adhesive thing 7, and can seal the opening 3 of this room 2; Because for the weld pad 4 of these bonding wire 6 routings respectively, move to the periphery of the opening 3 of this room 2 by room 2 inside, this room 2 must be wire bonder reservation operations space again, so the size that can dwindle assembling structure.Yet this kind design is when hiding 8 sealing room openings 3, and bonding wire 6 and weld pad 4 can be subjected to hiding 8 directly contact extruding, and cause bonding wire to be damaged or bonding wire 6 is come off by weld pad 4, make the wafer 5 can't normal operation, reduce structure dress yield, cause production cost to improve.
And supporter has just been set up in its practical novel improvement on the basis of the prior art, and supporter is folded on this supporting body end face between the some non-weld zones and this covering, and an adhesive thing is distributed in this covering and this supporting body joining place.
As Fig. 2, shown in 3, the structure of integrated circuit (IC) wafer adorns 10, it consists predominantly of a supporting body 1, one wafer 12, most bonding wires 13, one hides 14, one supporter 15, an one adhesive thing 16 and a jockey 17, wherein: this supporting body 11, can be plastic cement, glass fibre, reinforced plastic, pottery ... made etc. the insulating properties material, has an end face 11a, an one bottom surface 11b and a room 11c, this room 11c has a bottom 11d, one sidewall 11e, this sidewall 11e is surrounded on the periphery of this bottom 11d, and form an opening 11f in the top of this end face 11a, the periphery of this opening 11f, be arranged with most weld zone 11g and most non-weld zone 11h, these weld zones 11g and these non-weld zone 11h are adjacent arrangement, and above-mentioned respectively this weld zone 11g can be a weld pad.This wafer 12, the adhesive bottom 11d that is fixed in this room 11c, the surface of this wafer 12 has most weld pad 12a.This bonding wire 13 respectively, made by the metal material that conductivity such as aluminium or gold are good, it utilizes a routing machine (not shown) to be connected on the weld pad 12a of this wafer with the one end earlier, the other end is connected to the weld zone 11g of this supporting body 11 in the horizontal-extending mode again.
This hides 14, has an end face 14a and a bottom surface 14b, in order to seal the opening 11f of this room 11c, not polluted by outside destroy or foreign material to protect this wafer 12.This supporter 15, being formed in one is convexly set in the periphery that this hides 14 bottom surface 14b, and when this hid the opening 11f of 14 this room of sealing 11c, this supporter 15 fitted on the some non-weld zone 11h of this opening 11f periphery with its lower end.
By combinations thereof, the structure dress of this integrated circuit (IC) wafer, when it hides 14 this opening of sealing 11f, isolation by this supporter 15, can avoid this covering 14 directly to push respectively this bonding wire 13 and the respectively joining place of this weld zone 11g, the linking that destroys its grade causes respectively this weld zone 11g of respectively these bonding wire 13 disengagings, and this supporter 15 causes this covering 14 and all intermarginal holes of this opening 11f, can fill up sealing by this adhesive thing 16, keep the sealing effectiveness of this room 11c.
According to above-mentioned disclosed prior art, as can be seen in encapsulation process, the reason that causes wafer damage is that bonding wire is on the weld pad 12a on the gold thread surface that is connected the weld zone 11g of supporting body 11 end face 11a and wafer 12, because carrier 11 end face 11a are higher than the surface of wafer 12, both height are inconsistent, cause gold thread mid portion when connecting upwards to swell 100 and then be connected on the weld pad 12a downwards, to walk around the last corner 200 of wafer, prevent that corner 200 from being cut the mid portion of gold thread.
In the packaging technology of sensitization wafer, because the sensitization wafer is square, its overall dimension is very little, is 1/4,1/8,1/11 inch if any diagonal, and thickness is in 0.2～0.7 millimeter.Therefore employed gold thread length also is very thin and very short, and the height that all gold threads of controlling well swell in the process of welding is consistent to be very difficult, will inevitably produce the uneven phenomenon of height.
Caused gold thread long thus, the material cost of manufacturing increases greatly, and because gold thread projects upwards, can make gold thread produce contact short circuit between deformed damaged or the adjacent gold thread thereon when hiding to press, and badly influences the qualification rate of encapsulation.This structure is contained in when using also will be needed to be soldered on the printed circuit board (PCB), therefore the jockey 17 of this structure dress is arranged on carrier 11 peripheries, the jockey 17 of this structure is in use in case touched, can cause separating between carrier 11 and the jockey 17, be easy to cause the bonding wire 13 between the weld pad 12a on surface of the weld zone 11g of supporting body 11 end face 11a and wafer 12 to damage, cause open circuit and can't use.
The utility model content
The purpose of this utility model be to provide be electrically connected between a kind of packaging body and the sensitization wafer simple, reliable, electric exit on the packaging body is difficult for being touched and involves being electrically connected between packaging body and the sensitization wafer, and electric exit is fixing firm on packaging body, the sensitization wafer package module of being convenient to encapsulate.
For realizing the purpose of this utility model, described sensitization wafer package module comprises packaging body, be arranged on the cavity on the described packaging body, be arranged on the sensitization wafer in the described cavity, described sensitization upper wafer surface has photosensitive region and weld pad, the end face that described packaging body is positioned at the cavity periphery is provided with most bonding pads, be pasted with electrode slice on the described packaging body bottom surface with the corresponding electrical connection of described bonding pad, the described cavity degree of depth is arranged to make sensitization upper wafer surface therein concordant with described most bonding pads, on described bonding pad and described sensitization wafer corresponding pad, be provided with the metal wire of parallel welding, described photosensitive region outer peripheral face is provided with viscose glue, and described viscose glue is provided with the light transmission piece that covers on the described photosensitive region.
Because the sensitization upper wafer surface is approaching concordant with described most bonding pads, metal wire can be near flatly being welded on weld pad and the bonding pad like this, and this moment, metal wire can upwards not swell, and can save a lot of metal wires.This structure is broken gold thread machine (not shown) metal wire wherein at first in one side spot welding as long as make when welding operation, afterwards to other end translation again spot welding get final product.And do not need to resemble above-mentioned prior art what kind of, make and beat after the spot welding at one end of gold thread machine lives, more upwards and another side move, metal wire is extended upward after, downward again spot welding forms a crowned and goes to avoid corner on the sensitization wafer.And this patent makes that welding operation technology is simple and reliable, and because metal wire has not had the part of protuberance, the metal wire of this moment is even object of concora crush in the above also can make its distortion and the metal wire contact with each other short circuit hardly.Because be pasted with electrode slice on the packaging body bottom surface, this can make electrode slice make full use of the area of packaging body bottom surface.Make electrode slice as wide as possible attached on the firm bottom surface, fixation.Such electrode slice can not produce distortion because being subjected to extraneous shake-up, is convenient to smooth in use being welded on the circuit board.
Light transmission piece directly covers on the described photosensitive region by viscose glue, makes the space that forms in the package module reduce widely, has avoided wherein being flooded with impurity such as dust and steam because the space is big, influences the problem of the quality of photosensitive region imaging.And avoided in the prior art packaging technology, gluing will be operated at the bonding wire position, causes bonding wire to be damaged easily or is out of shape and causes the bad phenomenon of short circuit etc.
Description of drawings
The drawing of accompanying drawing is described as follows:
Fig. 1 is integrated circuit (IC) wafer structure dress figure commonly used.
The improvement figure that Fig. 2 makes on the integrated circuit (IC) wafer structure dress commonly used basis of Fig. 1 for existing patent.
Fig. 3 is the vertical view of Fig. 2.
Fig. 4 is the preceding view sub-anatomy of sensitization wafer package module assembling of the utility model embodiment 1.
Cutaway view after the sensitization wafer package module assembling that Fig. 5 is.
The stereogram of Fig. 6 for looking from the bottom surface stravismus among Fig. 5 embodiment 1.
The stereogram of Fig. 7 for looking from the end face stravismus among Fig. 5 embodiment 1.
Fig. 8 is the stereogram of the sensitization wafer package module of the utility model embodiment 2.
Fig. 9 is the preceding view sub-anatomy of sensitization wafer package module assembling among Fig. 8.
Figure 10 is the cutaway view after the sensitization wafer package module among Fig. 9 is assembled.
Embodiment
Below in conjunction with accompanying drawing, the specific embodiment of the utility model sensitization wafer package module is described in further detail:
As shown in Fig. 4,7, it is block that described packaging body 1 is the four directions, described packaging body 1 is provided with a tetragonal cavity 2, the end face 7 that described packaging body 1 is positioned at cavity 2 peripheries is provided with most bonding pads 8, is pasted with the electrode slice 9 with described bonding pad 8 corresponding electrical connections on described packaging body 1 bottom surface.
As shown in Fig. 4,5, it is block that described sensitization wafer 3 is the four directions, and its upper surface 4 has photosensitive region 5 and weld pad 6.Described sensitization wafer 3 is arranged in the cavity 2, and described cavity 2 degree of depth are arranged to make sensitization wafer 3 upper surfaces 4 therein concordant with described most bonding pad 8.
On described bonding pad 8 and described sensitization wafer 3 corresponding pad 6, be provided with the metal wire 10 of parallel welding.This metal wire 10 makes bonding pad 8 be electrically connected with weld pad 6, will the electrical connection of the weld pad 6 of sensitization wafer 3 be caused on the packaging body 1.Described metal wire 10 is a gold thread, and corresponding bonding pad 8 surfaces are provided with one deck Gold plated Layer, so that can be by solder bond together between gold thread and the bonding pad 8.Described photosensitive region 5 outer peripheral faces are provided with viscose glue 11, and described viscose glue 11 is provided with the light transmission piece 12 that covers on the described photosensitive region 5.Light transmission piece 12 protects photosensitive region 5 to prevent that dust from falling on the one hand, can allow the reflection ray of scenery enter into photosensitive region 5 imagings on the other hand again.
The side 14 of described sensitization wafer 3 and the sidewall of the described cavity 2 15 close slits 16 of being arranged to, this slit 16 is the smaller the better, can reduce the space in the cavity 2, so that the metal wire 10 of welding can be shorter, correspondingly intensity also can be better, the space of distortion is also just more little, produces the chance that contact causes short circuit thereby significantly reduce between the adjacent metal line 10 because of crimp.
Described packaging body 1 is two-sided or multilayer board, present embodiment can adopt double-sided printed-circuit board, wherein open a cubic hole that can hold sensitization wafer 3 in the centre of a single-layer printed circuit plate, the end face 7 of the periphery in hole, four directions is provided with the Copper Foil that is intervally arranged as required, and described bonding pad 8 is attached to the Copper Foil on this end face 7.And also be provided with the Copper Foil that is intervally arranged as required in other bottom surface of piece single-layer printed circuit plate.Described electrode slice 9 is attached to the Copper Foil on the bottom surface.Two-layer one is compound, and its insulating barrier then becomes the packaging body 1 for above-mentioned structure, and top Copper Foil then is a bonding pad 8, and following Copper Foil then is an electrode slice 9.Adopt two-sided or multilayer board as packaging body 1, both can make bonding pad 8 and electrode slice 9 securely attached on the packaging body 1, be convenient to utilize the manufacture craft of two-sided or multilayer board again, bonding pad 8 is formed in insulating barrier with electrode slice 9 to be connected, even sensitization wafer 3 is held in printed circuit board (PCB), directly the various paster electronic devices and components of welding on packaging body 1 conveniently use in each small space.
Embodiment 2, and as shown in Fig. 8～10, sensitization wafer package module described in the utility model comprises packaging body 1, cavity 2, sensitization wafer 3, upper surface 4, photosensitive region 5, weld pad 6, end face 7, bonding pad 8, electrode slice 9, metal wire 10, light transmission piece 12, side 14, sidewall 15, slit 16, viscose glue 11.
Described sensitization wafer package module, comprise packaging body 1, be arranged on the cavity 2 on the described packaging body 1, be arranged on the sensitization wafer 3 in the described cavity 2, described sensitization wafer 3 upper surfaces 4 have photosensitive region 5 and weld pad 6, the end face 7 that described packaging body 1 is positioned at cavity 2 peripheries is provided with most bonding pads 8, it is characterized in that being pasted with on described packaging body 1 bottom surface electrode slice 9 with described bonding pad 8 corresponding electrical connections, described cavity 2 degree of depth are arranged to make sensitization wafer 3 upper surfaces 4 therein concordant with described most bonding pad 8, on described bonding pad 8 and described sensitization wafer 3 corresponding pad 6, be provided with the metal wire 10 of parallel welding, be coated with viscose glue 11 on the described end face 7, described viscose glue 11 is provided with the light transmission piece 12 that covers on the described photosensitive region 5.Because upper surface 4 is concordant with bonding pad 8, metal wire 10 horizontal are welded between bonding pad 8 and the weld pad 6, the metal wire 10 of this moment is in straight configuration substantially, not to be stowed under heavy cargo not, so when light transmission piece 12 appropriateness are pressed in most metal wires 10, can be erected by metal wire 10, owing to be coated with viscose glue 11 between end face 7 and the light transmission piece 12, this viscose glue 11 has and occupies certain space, light transmission piece 12 is erected, so can reduce the extruding of 12 pairs of metal wires 10 of light transmission piece when encapsulation, this structure is avoided the short circuit and the disconnection of metal wire 10 effectively, can improve the qualification rate of encapsulation.
The side 14 of described sensitization wafer 3 and the sidewall of the described cavity 2 15 close slits 16 of being arranged to.This slit 16 is more little, illustrate that then the space that sensitization wafer 3 occupies is abundant more in cavity 2, space in the cavity of being sealed by light transmission piece 12 2 is also just more little, can significantly reduce this space like this because of encapsulation and be trapped in the quantity of impurity wherein and the quantity of steam.During use, sensitization wafer package module is welded on the circuit board of need installing heating, and can avoid because temperature raises suddenly, causes the volatilization of the impurity in the space in the cavity 2 and steam and expansion and expands quick-fried light transmission piece 12 and damage.The minimizing in this space simultaneously can reduce impurity motion therein, has reduced photosensitive region 5 widely by the possibility of contaminating impurity.This embodiment makes the space of cavity be arranged to profile near the sensitization wafer, reduced the unnecessary space of cavity, so this packaging body has reduced height and planar dimension greatly than existing packaging body, more meets the trend of camera product to little development, it is convenient more and extensive to use.
Described packaging body 1 is two-sided or multilayer board, and described bonding pad 8 is attached to the Copper Foil on the end face 7, and described electrode slice 9 is attached to the Copper Foil on the bottom surface.Adopt two-sided or multilayer board comes manufacturing and encapsulation body 1, the beneficial technical effects of its generation is narrated in the above, is not giving unnecessary details at this.
Claims (6)
1. sensitization wafer package module, comprise packaging body (1), be arranged on the cavity (2) on the described packaging body (1), be arranged on the sensitization wafer (3) in the described cavity (2), described sensitization wafer (3) upper surface (4) has photosensitive region (5) and weld pad (6), the end face (7) that described packaging body (1) is positioned at cavity (2) periphery is provided with most bonding pads (8), it is characterized in that being pasted with on described packaging body (1) bottom surface electrode slice (9) with the corresponding electrical connection of described bonding pad (8), described cavity (2) degree of depth is arranged to make sensitization wafer (3) upper surface (4) therein concordant with described most bonding pads (8), on described bonding pad (8) and described sensitization wafer (3) corresponding pad (6), be provided with the metal wire (10) of parallel welding, described photosensitive region (5) outer peripheral face is provided with viscose glue (11), and described viscose glue (11) is provided with the light transmission piece (12) that covers on the described photosensitive region (5).
2. sensitization wafer package module according to claim 1 is characterized in that the side (14) of described sensitization wafer (3) and the close slit (16) of being arranged to of sidewall (15) of described cavity (2).
3. sensitization wafer package module according to claim 1 and 2, it is characterized in that described packaging body (1) is two-sided or multilayer board, described bonding pad (8) is attached to the Copper Foil on the end face (7), and described electrode slice (9) is attached to the Copper Foil on the bottom surface.
4. sensitization wafer package module, comprise packaging body (1), be arranged on the cavity (2) on the described packaging body (1), be arranged on the sensitization wafer (3) in the described cavity (2), described sensitization wafer (3) upper surface (4) has photosensitive region (5) and weld pad (6), the end face (7) that described packaging body (1) is positioned at cavity (2) periphery is provided with most bonding pads (8), it is characterized in that being pasted with on described packaging body (1) bottom surface electrode slice (9) with the corresponding electrical connection of described bonding pad (8), described cavity (2) degree of depth is arranged to make sensitization wafer (3) upper surface (4) therein concordant with described most bonding pads (8), on described bonding pad (8) and described sensitization wafer (3) corresponding pad (6), be provided with metal wire (10) near parallel welding, be coated with on the described end face (7) with viscose glue (11), described viscose glue (11) is provided with the light transmission piece (12) that covers on the described photosensitive region (5).
5. sensitization wafer package module according to claim 4 is characterized in that the side (14) of described sensitization wafer (3) and the close slit (16) of being arranged to of sidewall (15) of described cavity (2).
6. according to claim 4 or 5 described sensitization wafer package modules, it is characterized in that described packaging body (1) is two-sided or multilayer board, described bonding pad (8) is attached to the Copper Foil on the end face (7), and described electrode slice (9) is attached to the Copper Foil on the bottom surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2007200552534U CN201075390Y (en) | 2007-08-07 | 2007-08-07 | Photoreception crystal plate packaging module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2007200552534U CN201075390Y (en) | 2007-08-07 | 2007-08-07 | Photoreception crystal plate packaging module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201075390Y true CN201075390Y (en) | 2008-06-18 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNU2007200552534U Expired - Fee Related CN201075390Y (en) | 2007-08-07 | 2007-08-07 | Photoreception crystal plate packaging module |
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| Country | Link |
|---|---|
| CN (1) | CN201075390Y (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016197318A1 (en) * | 2015-06-09 | 2016-12-15 | 方丽文 | Embedded circuit board patch structure |
| TWI698009B (en) * | 2018-06-26 | 2020-07-01 | 鴻海精密工業股份有限公司 | Image sensor chip encapsulation structure and method for manufacturing same |
-
2007
- 2007-08-07 CN CNU2007200552534U patent/CN201075390Y/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016197318A1 (en) * | 2015-06-09 | 2016-12-15 | 方丽文 | Embedded circuit board patch structure |
| TWI698009B (en) * | 2018-06-26 | 2020-07-01 | 鴻海精密工業股份有限公司 | Image sensor chip encapsulation structure and method for manufacturing same |
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