CN201057603Y - 发光二极体模组的结构改良 - Google Patents

发光二极体模组的结构改良 Download PDF

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CN201057603Y
CN201057603Y CNU2006201665304U CN200620166530U CN201057603Y CN 201057603 Y CN201057603 Y CN 201057603Y CN U2006201665304 U CNU2006201665304 U CN U2006201665304U CN 200620166530 U CN200620166530 U CN 200620166530U CN 201057603 Y CN201057603 Y CN 201057603Y
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林峰
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LIZHOU SCIENCE-TECHNOLOGY Co Ltd
Taiwan Oasis Technology Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/49105Connecting at different heights
    • H01L2224/49107Connecting at different heights on the semiconductor or solid-state body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909Post-treatment of the connector or wire bonding area
    • H01L2224/8592Applying permanent coating, e.g. protective coating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

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Abstract

本实用新型的发光二极体模组是由复数个发光二极管所构成,各发光二极管的发光芯片是装设于基板上相对应预设的凹坑状承载部中,并且在承载部周缘的基板设有不同电极的导电电路,利用金线构成发光芯片的电极层与各导电电路的联结后,再于承载部中填入荧光粉层,最后并于荧光粉层上设置封装胶体;其中,各承载部的边侧是朝向顶部斜伸,藉由斜伸角度的不同使各发光芯片所发出光线的发光角度亦不同,且该封装胶体亦可于荧光粉层上形成不同高度的配置,使整体发光二极体模组达到预期的光源表现。

Description

发光二极体模组的结构改良
技术领域
本实用新型涉及发光二极体模组的结构改良,旨在提供一可藉由不同发光角度的发光二极体的排列,达到预期光源的发光二极体模组结构。
背景技术
由于,发光二极体具备有体积小、低耗电、低热度以及寿命长等特性,如圣诞灯饰、手电筒、车辆信号灯、交通标志等商品,已逐渐利用发光二极体所替代功能相近的传统钨丝灯泡;另外,一般发光二极体的基本构造,是在一透明封装体的内部设有不同极性的导电端以及一承载部,其承载部处固设有一发光芯片,另设有金线构成发光芯片的电极层与导电端的连接,而各导电端并延伸出透明封装体外部成为电源接点。
在导电端的通电作用下,其发光芯片所产生的光源形成发光效果,当然亦可在发光芯片的外围设有萤光材料,以在发光芯片所产生的光源穿过萤光材料时,即与萤光材料的波长结合成为预期的色光;因此,在相关制程、制造技术的改良下,发光二极体是可经由萤光材料的设计,而制作成为具特定光色表现效果的发光组件,更使得发光二极体的市场版图极速的扩大。
实用新型内容
有鉴于此,本实用新型的主要目的,可藉由不同发光角度的发光二极体的排列,达到预期的光源表现,并可将此发光二极体模组应用于一般照明设备,如台灯或照明灯等。
为达到上述目的,本实用新型发光二极体模组的结构改良的主要目的,是该发光二极体模组是由复数个发光二极体所构成,各发光二极体的发光芯片是装设于基板上相对应预设的凹坑状承载部中,其中,各承载部的边侧是朝向顶部斜伸,藉由斜伸角度的不同使各发光芯片所发出光线的发光角度亦不同。
本实用新型发光二极体模组的结构改良的另一目的,是该发光二极体模组是由复数个发光二极体所构成,各发光二极体的发光芯片是装设于基板上相对应预设的凹坑状承载部中,并且在承载部周缘的基板设有不同电极的导电电路,利用金线构成发光芯片的电极层与各导电电路的联结后,再于承载部中填入萤光粉层,最后并于萤光粉层上设置封装胶体;其中,该封装胶体于萤光粉层上形成弧状曲率不同的配置,藉由封装胶体的不同弧状曲率使各发光发光芯片所发出光线的发光角度亦不同。
本实用新型的有益效果在于:可以得到一可藉由不同发光角度的发光二极体的排列,达到预期光源的发光二极体模组结构。
附图说明
图1为本实用新型中发光二极体模组第一实施例的结构示意图;
图2为本实用新型中承载部边侧斜伸角度较小的结构示意图;
图3为本实用新型中承载部边侧斜伸角度较大的结构示意图;
图4为本实用新型中封装胶体高度较低的结构示意图;
图5为本实用新型中封装胶体高度较高的结构示意图;
图6为本实用新型中发光二极体模组第二实施例的结构示意图;
图7为本实用新型中发光二极体模组第三实施例的结构示意图;
图8为本实用新型中照明设备的结构示意图。
【图号说明】
A、B——斜伸角度
C、D——高度
R1、R2、R3——曲率
1——基板
11——承载部
2——发光芯片
21——电极层
3——固晶粘着剂
4——金线
5——萤光粉层
6——封装胶体
7——照明设备
71——底座
具体实施方式
为能使贵审查员清楚本实用新型的结构组成,以及整体运作方式,兹配合图式说明如下:
本实用新型发光二极体模组的结构改良请参阅图1所示,其发光二极体模组是由复数个发光二极体所构成,而发光二极体的结构组成,是由基板1上预设有复数个凹坑状承载部11,并且在承载部11周缘的基板1设有不同电极的导电电路(图中未标示),在基板1的承载部11装设发光芯片2,其发光芯片2是可利用固晶粘着剂3固定在承载部11的底层,再利用金线4构成发光芯片2的电极层21与各导电电路的连结,再于承载部11中填入具有萤光粉的萤光粉层5,最后并于萤光粉层5上设置透明的封装胶体6,在导电电路的通电作用下,其发光芯片2所产生的光源在穿过萤光粉层5时,即与萤光粉层5的波长结合成为预期的可见光;其中,若要产生看似白光的拟白光,可使用蓝色发光芯片激发混合在萤光粉层当中的黄色萤光粉,或者使用蓝色发光芯片激发混合在萤光粉层当中的红色萤光粉以及绿色萤光粉,以利用产生红、绿双色与发光芯片的蓝色光结合,而达成三原色混光效果产生较高演色性之接近白光的光色。
本案的重点在于:各承载部11的边侧是朝向顶部形成一定角度的斜伸,如图2及图3所示,该斜伸角度分别为A、B且A<B,使得发光芯片2所产生的光线发光角度不同,即承载部11的边侧斜伸角度较小的发光角度较大(如图2所示);反之,斜伸角度较大则发光角度较小(如图3所示),以藉由斜伸角度不同承载部11配置于基板上1,如图1的实施例所示,各承载部11是具有二个以上不同的斜伸角度,使各发光芯片发出不同发光角度的光线,以达到调和光线并得到预期的光源表现。
另外,该封装胶体于萤光粉层上可形成不同高度的配置,同样可形成不同的发光角度,如图4及图5所示,该封装胶体6的高度分别为C、D且C<D,使得发光芯片2所产生的光线发光角度不同,即封装胶体6高度较低的发光角度较大(如图4所示);反之,封装胶体6高度较高的发光角度较小(如图5所示),以藉由高度不同的封装胶体6配置于基板上1,如图6所示,使各发光芯片发出不同发光角度的光线,以达到调和光线并得到预期的光源表现,且承载部中可具有高反射的反射层(图中未标示),以增加光源表现;当然,该高度不同的封装胶体亦可搭配斜伸角度不同的承载部,同样可达到调和光线的效果。
再者,该封装胶体于萤光粉层上可形成高度相同而弧状曲率不同之配置,同样可形成不同的发光角度,如图7所示,该封装胶体6的曲率分别有R1、R2、R3且R1>R2>R3,亦可使各发光芯片发出不同发光角度的光线,以达到调和光线并得到预期的光源表现;而该不同曲率配置的封装胶体亦可形成不同高度,或者搭配承载部的不同斜伸角度,亦可形成不同发光角度,同样可达到调和光线的效果;亦可进一步于承载部中设有高反射的反射层,以增加光源表现。
当然,上述的发光二极体模组以可装设于一般照明设备7(如台灯、照明灯等),提供光源来源,如图8所示,其发光二极体模组是装设固定于一底座71上,同样可藉由斜伸角度不同的承载部配置、弧状曲率不同的封装胶体配置,或者分别搭配高度不同的封装胶体配置,使各发光芯片2发出不同发光角度的光线,以达到调和光线并得到预期的光源表现。
如上所述,本实用新型提供一较佳发光二极体模组的结构改良,于是依法提出实用新型专利申请;然而,以上的实施说明及图式所示,是本实用新型较佳实施例,并非以此局限本实用新型,是以,举凡与本实用新型的构造、装置、特征等近似、雷同,均应属本实用新型的创设目的及申请专利范围之内。

Claims (4)

1.一种发光二极体模组的结构改良,该各发光芯片是装设于基板上相对应预设的凹坑状承载部中,并且在承载部周缘的基板设有不同电极的导电电路,利用金线构成发光芯片的电极层与各导电电路的联结后,再于承载部中填入萤光粉层,最后并于萤光粉层上设置封装胶体;其特征在于:
各封装胶体在萤光粉层上的高度相同而弧形曲率不同。
2.如权利要求1项所述发光二极体模组的结构改良,其特征在于,该封装胶体在萤光粉层上的高度不同。
3.如权利要求1所述发光二极体模组的结构改良,其特征在于,该承载部中具有高反射的反射层。
4.如权利要求1所述发光二极体模组的结构改良,其特征在于,该发光二级体模组设置在可供各光源承载定位的底座中,包含有数个光源。
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102052624A (zh) * 2009-11-09 2011-05-11 亿光电子工业股份有限公司 变光发光组件及其制作方法
CN102144120A (zh) * 2008-07-02 2011-08-03 萨诺维亚能源科技股份有限公司 由多个光源合成光输出图的灯单元
CN102856315A (zh) * 2012-09-22 2013-01-02 歌尔声学股份有限公司 发光二极管装置

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102144120A (zh) * 2008-07-02 2011-08-03 萨诺维亚能源科技股份有限公司 由多个光源合成光输出图的灯单元
US8635049B2 (en) 2008-07-02 2014-01-21 Evolucia, Inc. Light unit with light output pattern synthesized from multiple light sources
US9470371B2 (en) 2008-07-02 2016-10-18 Evolucia, Inc. Light unit with light output pattern synthesized from multiple light sources
CN102052624A (zh) * 2009-11-09 2011-05-11 亿光电子工业股份有限公司 变光发光组件及其制作方法
CN102052624B (zh) * 2009-11-09 2013-09-25 亿光电子工业股份有限公司 变光发光组件及其制作方法
CN102856315A (zh) * 2012-09-22 2013-01-02 歌尔声学股份有限公司 发光二极管装置

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