CN200965888Y - A ZnO-based LED - Google Patents

A ZnO-based LED Download PDF

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Publication number
CN200965888Y
CN200965888Y CNU2006201396401U CN200620139640U CN200965888Y CN 200965888 Y CN200965888 Y CN 200965888Y CN U2006201396401 U CNU2006201396401 U CN U2006201396401U CN 200620139640 U CN200620139640 U CN 200620139640U CN 200965888 Y CN200965888 Y CN 200965888Y
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zno
layer
type
value
multilayer
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朱丽萍
顾修全
叶志镇
赵炳辉
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Zhejiang University ZJU
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Zhejiang University ZJU
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Abstract

The utility model discloses a ZnO-allyl LED, which is characterized in that a ZnO homogeneous buffer layer, a n-type ZnO contact layer, a n-type Zn <1-x> Mg <x> O layer, multiple-layers Zn <1-x> Mg <x> O or ZnO multi-quantum well structure layers formed by alternately depositing the Zn <1-x> Mg <x> O and the ZnO, a p-type ZnO contact layer, multiple-layers Zn <1-x> Mg <x> O or Zn <1-y> Mg <y> O distributed distributing Bragg reflecting mirror structure layers formed by alternately depositing Zn <1-x> Mg <x> O and Zn <1-y> Mg <y> O are sequentially deposited on a substrate from top to bottom; a first electrode is deposited on the n-type ZnO contact layer with being parallel to the n-type ZnMgO layer; a second electrode is deposited on the p-type ZnO contact layer with being parallel to multiple-layers of Zn <1-x> Mg <x> O or Zn <1-y> Mg <y> O distributed Bragg reflecting mirror structure layers. The multi-quantum well and distributed Bragg structures are brought in the ZnO-allyl LED and the efficiency of emitting light of LED can be effectively enhanced.

Description

A kind of zno-based light-emitting diode
Technical field
The utility model relates to a kind of zno-based light-emitting diode.
Background technology
ZnO is a kind of novel semiconductor material with wide forbidden band, has higher exciton bind energy, is following a kind of desirable short-wave long light-emitting device material.Northeastern Japan university at first adopted high low temperature to regulate and realizes ZnO homojunction electroluminescence LED in 2005.Zhejiang University also in preparing the ZnO-LED antetype device with the MOCVD technology then, has realized room temperature electroluminescent.But up to the present, the zno-based LED luminous efficiency of having reported is all very low, and brightness is also very weak.Make device move towards practicability, must optimize the LED structural design.If with periodic thickness is that the distribution Bragg reflector (DBR) that two kinds of semi-conducting materials by different refractivity of 1/4 wavelength are alternately formed is applied to zno-based LED, to significantly reduce luminous intensity owing to the loss that transmission and absorption cause, improve the luminous efficiency of LED.And if further DBR and Multiple Quantum Well are combined, will more help the raising of luminous efficiency, this beyond doubt work highly significant.And at present about the design of the LED of this structure and the research also not appearance in the world of preparation.
Summary of the invention
The purpose of this utility model provides a kind of new zno-based light-emitting diode.
Zno-based light-emitting diode of the present utility model deposits ZnO homogeneous buffer layer, n type ZnO contact layer, n type Zn from bottom to top successively on substrate 1-xMg xThe O layer, by Zn 1-xMg xThe multilayer Zn that O and ZnO alternating deposit form 1-xMg xO/ZnO multi-quantum pit structure layer, p type Zn 1-xMg xO layer, p type ZnO contact layer and by Zn 1-xMg xO and Zn 1-yMg yThe multilayer Zn that the O alternating deposit forms 1-xMg xO/Zn 1-yMg yO distribution Bragg reflector structure sheaf, first electrode are listed in n type ZnMgO and are deposited upon on the n type ZnO contact layer, and second electrode is listed in multilayer Zn 1-xMg xO/Zn 1-yMg yO distribution Bragg reflector structure sheaf is deposited on the p type ZnO contact layer, wherein multilayer Zn 1-xMg xThe X value of O/ZnO multi-quantum pit structure layer is 0＜X＜0.4, multilayer Zn 1-xMg xO/Zn 1-yMg yThe X value of O distribution Bragg reflector structure sheaf is 0～0.4, and the Y value is 0～0.4, and X value and Y value are inequality, n type Zn 1-xMg xThe X value of O layer is 0＜X＜0.2, p type Zn 1-xMg xThe X value of O layer is 0＜X＜0.2.
Above-mentioned multilayer Zn 1-xMg xO/ZnO multi-quantum pit structure layer can be by Zn 1-xMg xAlternately 10～20 cycles formed for O and ZnO.Multilayer Zn 1-xMg xO/Zn 1-yMg yO distribution Bragg reflector structure sheaf can be by Zn 1-xMg xO and Zn 1-yMg yAlternately 10～40 cycles formed O.
Said substrate can be silicon, sapphire or ZnO monocrystalline.Said first electrode can be n-ZnO nesa coating or an ITO film of mixing Ga.Second electrode can be InZn or InSn alloy.
The preparation method of zno-based light-emitting diode may further comprise the steps:
1) will put into the growth room of impulse laser deposition system after the substrate surface cleaning, growth room's vacuum degree is evacuated to 4.0 * 10 -4Pa, heated substrate makes underlayer temperature rise to 200～600 ℃ then, input oxygen, oxygen is pressed and is transferred to 0.1～10Pa, and the setting laser parameter is 300mJ, 3Hz, substrate and target spacing 4.5cm, the conversion target deposits ZnO resilient coating, n type ZnO contact layer, n type Zn successively 1-xMg xThe O layer continues the identical growth conditions of maintenance, alternating deposit Zn 1-xMg xO and ZnO layer to be forming the multi-quantum pit structure in 10～20 cycles, and then deposit p type Zn successively 1-xMg xO layer and p type ZnO contact layer continue the identical growth conditions of maintenance, alternating deposit Zn 1-xMg xO and Zn 1-yMg yThe O layer is to form the Bragg mirror structure in 10～40 cycles;
2) the step 1) goods are put into the reative cell of magnetic control sputtering device, reative cell vacuum degree is evacuated to 10 -3Pa deposits first electrode that is listed in n type ZnMgO layer on n type ZnO contact layer under the room temperature condition, deposition is listed in multilayer Zn on p type ZnO contact layer 1-xMg xO/Zn 1-yMg ySecond electrode of O distribution Bragg reflector structure sheaf.
The thickness of each layer is by regulating growth time control.Zn in the Bragg mirror wherein 1-xMg xO and Zn 1-yMg yThe thickness of O layer is by λ/4n decision, and λ is a LED outgoing light wavelength, and n is the refractive index of each layer in the Bragg mirror.
The component of each layer is by the decision of the dopant dose in the target, wherein multilayer Zn 1-xMg xThe X value of O/ZnO multi-quantum pit structure layer is 0＜X＜0.4, multilayer Zn 1-xMg xO/Zn 1-yMg yThe X value of O distribution Bragg reflector structure sheaf is 0～0.4, and the Y value is 0～0.4, and X value and Y value are inequality, n type Zn 1-xMg xThe X value of O layer is 0＜X＜0.2, p type Zn 1-xMg xThe X value of O layer is 0＜X＜0.2.
The beneficial effects of the utility model are:
Zno-based light-emitting diode of the present utility model has been introduced Multiple Quantum Well and distribution bragg structure, therefore can reduce the loss that causes owing to luminous intensity transmission and absorption, thereby can improve the luminous efficiency of LED.
Description of drawings
Fig. 1 is a zno-based light emitting diode construction schematic diagram of the present utility model.
Embodiment
With reference to Fig. 1, zno-based light-emitting diode zno-based light-emitting diode of the present utility model deposits ZnO homogeneous buffer layer 2, n type ZnO contact layer 3, n type Zn from bottom to top successively on substrate 1 1-xMg xO layer 4, by Zn 1-xMg xThe multilayer Zn that O and ZnO alternating deposit form 1-xMg xO/ZnO multi-quantum pit structure layer 5, p type Zn 1-xMg xO layer 6, p type ZnO contact layer 7 and by Zn 1-xMg xO and Zn 1-yMg yThe multilayer Zn that the O alternating deposit forms 1-xMg xO/Zn 1-yMg yO distribution Bragg reflector structure sheaf 8, the first electrodes 9 are listed in n type ZnMgO layer 4 and are deposited on the n type ZnO contact layer 3, and second electrode 10 is listed in multilayer Zn 1-xMg xO/Zn 1-yMg yO distribution Bragg reflector structure sheaf 8 is deposited on the p type ZnO contact layer 7, wherein multilayer Zn 1-xMg xThe X value of O/ZnO multi-quantum pit structure layer is 0＜X＜0.4, multilayer Zn 1-xMg xO/Zn 1-yMg yThe X value of O distribution Bragg reflector structure sheaf is 0～0.4, and the Y value is 0～0.4, and X value and Y value are inequality, n type Zn 1-xMg xThe X value of O layer is 0＜X＜0.2, p type Zn 1-xMg xThe X value of O layer is 0＜X＜0.2.
Embodiment 1
1) with 2 inches sapphire (Al 2O 3) polished silicon wafer is as substrate, puts into the growth room of impulse laser deposition system after will substrate surface cleaning, growth room's vacuum degree is evacuated to 4.0 * 10 -4Pa, heated substrate makes underlayer temperature rise to 400 ℃ then, input oxygen, oxygen is pressed and is transferred to 1Pa,, the setting laser parameter is 300mJ, 3Hz, substrate and target spacing 4.5cm, deposit the ZnO resilient coating of the about 100nm of one deck with this understanding, continue to be warming up to 600 ℃ and annealed 5 minutes, it is constant to keep oxygen to press, deposit the Al Doped n-type ZnO contact layer of one deck 50nm successively, the Al Doped n-type Zn of one deck 50nm 0.65Mg 0.35The O layer.Continue the identical growth conditions of maintenance, alternating deposit Zn 0.9Mg 0.1O and ZnO layer are to form the multi-quantum pit structure in 10 cycles, wherein Zn 0.9Mg 0.1The O layer thickness is 10nm, and the ZnO layer thickness is 3nm.On Multiple Quantum Well, deposit the Li doped p type Zn of one deck 50nm then successively 0.65Mg 0.35O layer and p type ZnO contact layer.On p type ZnO contact layer, continue alternating deposit ZnO and Zn 0.64Mg 0.36The O layer is to form 20 period profile formula Bragg mirrors (DBR) structure, and the ZnO bed thickness is 48.8nm, Zn 0.64Mg 0.36The O bed thickness is 52.9nm;
2) the step 1) goods are put into the reative cell of magnetic control sputtering device, reative cell vacuum degree is evacuated to 10 -3Pa deposits one deck and n type Zn on n type ZnO contact layer under the room temperature condition 0.65Mg 0.35First electrode that the O layer is arranged side by side, deposition one deck and ZnO/Zn on p type ZnO contact layer 0.64Mg 0.36Second electrode that O distribution Bragg reflector structure sheaf is arranged side by side, in this example, first electrode is a n-ZnO nesa coating of mixing Ga, second electrode is the InZn alloy firm.
Embodiment 2
1) with the ZnO monocrystalline as substrate, put into the growth room of impulse laser deposition system after will substrate surface cleaning, growth room's vacuum degree is evacuated to 4.0 * 10 -4Pa, heated substrate makes underlayer temperature rise to 200 ℃ then, input oxygen, oxygen is pressed and to be transferred to 0.1Pa, and the setting laser parameter is 300mJ, 3Hz, and substrate and target spacing 4.5cm deposit the ZnO resilient coating of the about 100nm of one deck with this understanding.Continue to be warming up to 600 ℃ and annealed 5 minutes, it is constant to keep oxygen to press, and deposits the Al Doped n-type ZnO contact layer of one deck 50nm successively, the Al Doped n-type Zn of one deck 50nm 0.85Mg 0.15The O layer.Continue the identical growth conditions of maintenance, alternating deposit Zn 0.9Mg 0.1O and ZnO layer are to form the multi-quantum pit structure in 10 cycles, wherein Zn 0.9Mg 0.1The O layer thickness is 10nm, and the ZnO layer thickness is 3nm.On Multiple Quantum Well, deposit the P doped p type Zn of one deck 50nm then successively 0.85Mg 0.15O layer and p type ZnO contact layer.On p type ZnO contact layer, continue alternating deposit ZnO and Zn 0.64Mg 0.36The O layer is to form 20 period profile formula Bragg mirrors (DBR) structure, and the ZnO bed thickness is 48.8nm, Zn 0.64Mg 0.36The O bed thickness is 52.9nm;
2) the step 1) goods are put into the reative cell of magnetic control sputtering device, reative cell vacuum degree is evacuated to 10 -3Pa deposits and n type Zn on n type ZnO contact layer under the room temperature condition 0.85Mg 0.15First electrode that the O layer is arranged side by side, deposition one deck and ZnO/Zn on p type ZnO contact layer 0.64Mg 0.36Second electrode that O distribution Bragg reflector structure sheaf is arranged side by side, in this example, first electrode is the ITO film, second electrode is the InSn alloy firm.
Embodiment 3
1) with the ZnO monocrystalline as substrate, put into the growth room of impulse laser deposition system after will substrate surface cleaning, growth room's vacuum degree is evacuated to 4.0 * 10 -4Pa, heated substrate makes underlayer temperature rise to 600 ℃ then, input oxygen, oxygen is pressed and to be transferred to 10Pa, and the setting laser parameter is 300mJ, 3Hz, and substrate and target spacing 4.5cm deposit the ZnO resilient coating of the about 100nm of one deck with this understanding.Continue to be warming up to 600 ℃ and annealed 5 minutes, it is constant to keep oxygen to press, and deposits the Al Doped n-type ZnO contact layer of one deck 50nm successively, the Al Doped n-type Zn of one deck 50nm 0.85Mg 0.15The O layer.Continue the identical growth conditions of maintenance, alternating deposit Zn 0.9Mg 0.1O and ZnO layer are to form the multi-quantum pit structure in 10 cycles, wherein Zn 0.9Mg 0.1The O layer thickness is 10nm, and the ZnO layer thickness is 3nm.On Multiple Quantum Well, deposit the P doped p type Zn of one deck 50nm then successively 0.85Mg 0.15O layer and p type ZnO contact layer.On p type ZnO contact layer, continue alternating deposit Zn 0.64Mg 0.36O and ZnO layer are to form 20 period profile formula Bragg mirrors (DBR) structure, and the ZnO bed thickness is 48.8nm, Zn 0.64Mg 0.36The O bed thickness is 52.9nm;
2) the step 1) goods are put into the reative cell of magnetic control sputtering device, reative cell vacuum degree is evacuated to 10 -3Pa deposits and n type Zn on n type ZnO contact layer under the room temperature condition 0.85Mg 0.15First electrode that the O layer is arranged side by side, deposition one deck and Zn on p type ZnO contact layer 0.64Mg 0.36Second electrode that O/ZnO distribution Bragg reflector structure sheaf is arranged side by side, in this example, first electrode is the ITO film, second electrode is the InSn alloy firm.

Claims (6)

1. a zno-based light-emitting diode is characterized in that depositing successively ZnO homogeneous buffer layer (2), n type ZnO contact layer (3), n type Zn from bottom to top on substrate (1) 1-xMg xO layer (4), by Zn 1-xMg xThe multilayer Zn that O and ZnO alternating deposit form 1-xMg xO/ZnO multi-quantum pit structure layer (5), p type Zn 1-xMg xO layer (6), p type ZnO contact layer (7) and by Zn 1-xMg xO and Zn 1-yMg yThe multilayer Zn that the O alternating deposit forms 1-xMg xO/Zn 1-yMg yO distribution Bragg reflector structure sheaf (8), first electrode (9) are listed in n type ZnMgO layer (4) and are deposited on the n type ZnO contact layer (3), and second electrode (10) is listed in multilayer Zn 1-xMg xO/Zn 1-yMg yO distribution Bragg reflector structure sheaf (8) is deposited on the p type ZnO contact layer (7), wherein multilayer Zn 1-xMg xThe X value of O/ZnO multi-quantum pit structure layer is 0＜X＜0.4, multilayer Zn 1-xMg xO/Zn 1-yMg yThe X value of O distribution Bragg reflector structure sheaf is 0～0.4, and the Y value is 0～0.4, and X value and Y value are inequality, n type Zn 1-xMg xThe X value of O layer is 0＜X＜0.2, p type Zn 1-xMg xThe X value of O layer is 0＜X＜0.2.
2. zno-based light-emitting diode according to claim 1 is characterized in that said multilayer Zn 1-xMg xO/ZnO multi-quantum pit structure layer (5) is by Zn 1-xMg xAlternately 10～20 cycles formed for O and ZnO.
3. zno-based light-emitting diode according to claim 1 is characterized in that said multilayer Zn 1-xMg xO/Zn 1-yMg yO distribution Bragg reflector structure sheaf (8) is by Zn 1-xMg xO and Zn 1-yMg yAlternately 10～40 cycles formed O.
4. zno-based light-emitting diode according to claim 1 is characterized in that said substrate is silicon, sapphire or ZnO monocrystalline.
5. zno-based light-emitting diode according to claim 1 is characterized in that said first electrode (9) is for mixing n-ZnO nesa coating or the ITO film of Ga.
6. zno-based light-emitting diode according to claim 1 is characterized in that said second electrode (10) is InZn or InSn alloy.
CNU2006201396401U 2006-11-02 2006-11-02 A ZnO-based LED Expired - Fee Related CN200965888Y (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105742190A (en) * 2016-05-09 2016-07-06 常州工学院 Preparation method of ZnO-based asymmetric quantum well tunneling homogeneous p-n diode
RU2639605C2 (en) * 2012-06-29 2017-12-21 Люмиледс Холдинг Б.В. Light-emitting semiconductor device based on elements of ii-vi groups

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2639605C2 (en) * 2012-06-29 2017-12-21 Люмиледс Холдинг Б.В. Light-emitting semiconductor device based on elements of ii-vi groups
CN105742190A (en) * 2016-05-09 2016-07-06 常州工学院 Preparation method of ZnO-based asymmetric quantum well tunneling homogeneous p-n diode

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