CN200956493Y - Semiconductor laser shaping device - Google Patents
Semiconductor laser shaping device Download PDFInfo
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- CN200956493Y CN200956493Y CN 200620135940 CN200620135940U CN200956493Y CN 200956493 Y CN200956493 Y CN 200956493Y CN 200620135940 CN200620135940 CN 200620135940 CN 200620135940 U CN200620135940 U CN 200620135940U CN 200956493 Y CN200956493 Y CN 200956493Y
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Abstract
A semiconductor laser idiomorphous device is provided with a semiconductor laser; a gradient reflecting rate lens is arranged in the direction of injection of the semiconductor laser in a rack. A one-dimensional gradient reflecting rate lens is a flat lens; laser injects along the direction of thickness of the gradient reflecting rate lens. The incidence surface of the one-dimensional gradient reflecting rate lens is a plane of a cylindrical side plane in the vertical direction of the laser fast shaft; the outgoing plane of the laser is a plane of a cylindrical side plane is a plane of a cylindrical side plane in the vertical direction of the laser fast shaft; the distance between the one-dimensional gradient reflecting rate lens and the semiconductor laser is 0.05 to 2.5 mm. The utility model has the advantages of simple structure, compact, easy to install and test, light energy concentration, less energy loss, which can be widely used in the technical fields of CD-ROM memory, laser holography, laser printer, optical communications, laser collimator, bar code reader, medical service, aerospace, laser indicators etc.
Description
Technical field
The utility model belongs to laser, promptly utilize stimulated emission to infrared ray, visible light or ultraviolet ray vibrate, the device technology field of amplification, modulation, demodulation or frequency conversion, be specifically related to laser, have from the position of sending laser or device that direction changes its position or direction.
Background technology
Semiconductor laser (LD) has that volume is little, low in energy consumption, the life-span is long, conversion efficiency is high, the direct advantage of internal modulation, be the perfect light source of laser fiber communication, and be widely used in technical fields such as optical disc storage device, laser hologram, laser printer, optical communication, laser collimator, bar code reader, medical treatment, Aero-Space, laser designator.
Optical fiber more makes semiconductor laser obtain using widely with combining of semiconductor laser, for example in the communications field, how to make the light energy output of laser more stable, the transmission of longer distance, in diode laser, light-pumped solid state laser, how to make more effective being transferred on the gain medium of Output optical power energy of semiconductor laser, thereby obtain higher pumping efficiency, these all relate to the coupled problem of semiconductor laser and optical fiber.Therefore, semiconductor laser is a key technology of optical fiber communication transmission system and field of optoelectronic devices to the coupling of optical fiber always.The progress of coupling technique directly has influence on the performance of whole fibre system.How to improve coupling technique, improve coupling efficiency, thereby improve the ratio of performance to price of optical device, also become the heat subject of photoelectric field research.
The light beam that semiconductor laser sends is an Elliptical Gaussian Beam.If not adding shaping, directly to carry out coupling efficiency be 29%.In order to make the more effective coupled into optical fibres of semiconductor laser, must adopt the Lens Coupling mode to revise for the Gaussian beam at Vernonia parishii Hook angle.The influence at Vernonia parishii Hook angle mainly shows: cause serious spherical aberration, cause the equiphase surface of Gaussian beam seriously to distort, cause that therefrom coupling loss occupies suitable proportion in the coupled system total losses; For the less optical coupling system of relative aperture, the Vernonia parishii Hook angle can make a part of light energy in the Gaussian beam can't pass through coupled system, this not only causes the direct loss of luminous power, and also feasible optical field distribution by coupled system distorts, thereby influences Mode Coupling; Fresnel reflection on Vernonia parishii Hook angle Gaussian beam each optical interface in coupled system changes in quite on a large scale with the difference of incidence angle, cause a direct loss of luminous power and a distribution of amplitudes of Gaussian beam to distort, thereby further influenced Mode Coupling.
The semiconductor laser output beam is the astigmatism elliptical beam, and it is called quick shaft direction perpendicular to the direction of junction plane, and the angle of divergence is 25 °～60 °; Being parallel to the junction plane direction is slow axis, and its angle of divergence is 5 °～15 °.In actual use, the high light beam of quality be sought out, shaping and astigmatic correction must be collimated light beam.
Conventional semiconductor laser device beam shaping device is by three kinds at present, and a kind of is angle collimation and the shaping that the post lens carry out quick shaft direction, and the adjustment tolerance of post lens is less, and is difficult to process focal length very little.The another kind of collimation that adopts einzel lens noise spectra of semiconductor lasers output beam, it is simple in structure, convenient economical that this semiconductor laser device beam shaping device has, but effect is relatively poor, and collimation is lower, and the negative effect that aberration brought, be difficult for remote laser beam is collimated.Also have a kind of employing transmitter-telescope noise spectra of semiconductor lasers output beam to collimate, promptly with a short focus lens Gaussian beam is focused in advance, so that obtain minimum waist spot, and then improve its directivity with the lens of a long-focus, can well be collimated effect, the major defect of this semiconductor laser device beam shaping device is a complex structure, the cost height, and volume is big.
Summary of the invention
Technical problem to be solved in the utility model is to overcome the shortcoming of above-mentioned semiconductor laser device beam shaping device, provide a kind of simple in structure, volume is little, cost is low, coupling efficiency is high, be easy to the semiconductor laser shaper adjusting and install.
Solving the problems of the technologies described above the technical scheme that is adopted is: semiconductor laser is set on support, on the direction of support semiconductor-on-insulator laser outgoing laser beam, the one dimension gradient-index lens is set, the one dimension gradient-index lens is a flat-plate lens, laser is along the thickness direction incident of one dimension gradient-index lens, the laser entrance face of one dimension gradient-index lens is plane or the cylindrical side vertical with the laser quick shaft direction, laser-emitting face is plane or the cylindrical side vertical with the laser quick shaft direction, and the distance of one dimension gradient-index lens and semiconductor laser is 0.05～2.5mm.
One dimension gradient-index lens of the present utility model is to have refractive index according to following formula
The rectangular flat lens that distribute, n in the formula
0Be the refractive index of lens centre, n
0Be 1.5～1.7, x is certain some distance apart from the lens centre in the lens,
Be to focus on constant, the thickness of one dimension gradient-index lens is that 0.1～2mm, logical light length are that 0.1～9.5mm, width are 0.1～8mm, focusing constant
Be 0.36～7.5.
One dimension gradient-index lens preferred thickness of the present utility model is that 0.1～1.5mm, excellent gated optical length are that 1～8mm, preferable width are 0.5～6mm, preferably focus on constant
Be 1～6.
One dimension gradient-index lens optimum thickness of the present utility model is that 0.3mm, best logical light length are that 1.5mm, optimum width are 2mm, optimum focusing constant
Be 2.51.
The radius of curvature R 1 of the laser incident cylindrical side of one dimension gradient-index lens of the present utility model is that the radius of curvature R 2 of 0.1～5mm, laser emitting cylindrical side is 0.1～5mm.
The radius of curvature R 2 that the radius of curvature R 1 of the laser entrance face cylindrical side of one dimension gradient-index lens of the present utility model is preferably 0.2～4mm, laser-emitting face cylindrical side is preferably 0.2～4mm.
Radius of curvature R 1 the best of the laser entrance face cylindrical side of one dimension gradient-index lens of the present utility model is the radius of curvature R 2 best 2.5mm of being of 2.5mm, laser-emitting face cylindrical side.
The radius of curvature R 1 of the laser incident cylindrical side of one dimension gradient-index lens of the present utility model is identical with the radius of curvature R 2 of laser emitting cylindrical side.
The preferred distance of one dimension gradient-index lens of the present utility model and semiconductor laser is 0.1～0.8mm.
The optimum distance of one dimension gradient-index lens of the present utility model and semiconductor laser is 0.2mm.
The utility model adopts the output beam of one dimension gradient-index lens noise spectra of semiconductor lasers to be shaped as cylindrical symmetric beam, makes the collimation of semiconductor laser and is coupled very conveniently, has improved collimation and coupling efficiency, has reduced the cost of collimation and coupling.The utlity model has simple in structure, advantages such as volume is little, easy Installation and Debugging, light energy is concentrated, optical energy loss is little.Can be used for technical fields such as optical disc storage device, laser hologram, laser printer, optical communication, laser collimator, bar code reader, medical treatment, Aero-Space, laser designator.
Description of drawings
Fig. 1 is the structural representation of the utility model embodiment 1.
Fig. 2 is the structural representation of one dimension gradient-index lens 2 among Fig. 1.
Fig. 3 is the structural representation of one dimension gradient-index lens 2 among the embodiment 4～6.
Fig. 4 is the structural representation of one dimension gradient-index lens 2 among the embodiment 7～9.
Fig. 5 is that semiconductor laser 1 (xz plane) fast axial light bundle is through one dimension gradient-index lens 2 shaping schematic diagrames.
Fig. 6 is that semiconductor laser 1 (yz plane) slow axis beam is through one dimension gradient-index lens 2 shaping schematic diagrames.
Embodiment
Below in conjunction with drawings and Examples the utility model is further described, but the utility model is not limited to these embodiment.
Embodiment 1
In Fig. 1, the semiconductor laser shaper of present embodiment is made of support 3, semiconductor laser 1,2 connections of one dimension gradient-index lens.
Be installed with semiconductor laser 1 on support 3, the model of the semiconductor laser 1 of present embodiment is QL65D5SA, and wavelength is 650nm, and its light-emitting area is 5um * 2um.Horizontal positioned is installed with one dimension gradient-index lens 2 on the direction of support 3 semiconductor-on-insulator lasers 1 outgoing laser beam, one dimension gradient-index lens 2 is the rectangular flat lens, this lens only have graded index on the thickness direction of lens, the thickness of one dimension gradient-index lens 2 is that 0.3mm, logical light length are that 1.5mm, width are 2mm, focusing constant
Be 2.51.The laser entrance face of one dimension gradient-index lens 2 is planes vertical with the laser quick shaft direction, be the thickness direction incident of laser along one dimension gradient-index lens 2, laser-emitting face is the plane vertical with the laser quick shaft direction, and one dimension gradient-index lens 2 is 0.2mm with the distance of semiconductor laser 1.One dimension gradient-index lens 2 is used for the elliptical beam of semiconductor laser 1 output is shaped as cylindrical symmetric beam, and the optical characteristics of one dimension gradient-index lens 2 is for only upwards changing light path at folk prescription.One dimension gradient-index lens 2 is to have refractive index according to following formula
The rectangular flat lens that distribute, n in the formula
0Be the refractive index of lens centre, n
0Be 1.635, x is the distance from the lens centre,
Be to focus on constant.
The refraction index profile of one dimension gradient-index lens 2 only is the thickness direction graded profile of lens in the x direction as can be seen from the above equation, and the optical characteristics of an awl gradient-index lens 2 is similar to the post lens, and only folk prescription is to changing light path.Therefore, one dimension gradient-index lens 2 can replace the post lens to be used as the beam shaping and the collimation of semiconductor laser 1.Adopt one dimension gradient-index lens 2 to replace the post lens to carry out shaping, can overcome post lens and adjust that tolerance is less, the shortcoming of processing difficulties, the quick shaft direction of noise spectra of semiconductor lasers 1 carries out shaping, makes fast axle outgoing laser beam angle identical with slow axis outgoing laser beam angular dimension.
In the present embodiment, one dimension gradient-index lens 2 is the rectangular flat lens, and the thickness of one dimension gradient-index lens 2 is that 0.1mm, logical light length are that 0.1mm, width are 0.1mm, focusing constant
Be 7.5, n
0Be 1.5.The lasing area of one dimension gradient-index lens 2 is that plane, the laser-emitting face vertical with the laser quick shaft direction is the plane vertical with the laser quick shaft direction, and one dimension gradient-index lens 2 is 0.05mm with the distance of semiconductor laser 1.The connecting relation of other parts and parts is identical with embodiment 1.
Embodiment 3
In the present embodiment, one dimension gradient-index lens 2 is the rectangular flat lens, and the thickness of one dimension gradient-index lens 2 is that 2mm, logical light length are that 9.5mm, width are 8nm, focusing constant
Be 0.36, n
0Be 1.7.The laser entrance face of one dimension gradient-index lens 2 is that plane, the laser-emitting face vertical with the laser quick shaft direction is the plane vertical with the laser quick shaft direction, and one dimension gradient-index lens 2 is 2.5mm with the distance of semiconductor laser 1.The connecting relation of other parts and parts is identical with embodiment 1.
Embodiment 4
In above embodiment 1～3, the laser entrance face of one dimension gradient-index lens 2 is that cylindrical side, the laser-emitting face vertical with the laser quick shaft direction is the plane vertical with the laser quick shaft direction, and the radius of curvature R 1 of laser entrance face cylindrical side is 2.5mm.The physical dimension of one dimension gradient-index lens 2 is identical with respective embodiments.One dimension gradient-index lens 2 is identical with respective embodiments with the distance of semiconductor laser 1.The connecting relation of other parts and parts is identical with respective embodiments.
In above embodiment 1～3, the laser entrance face of one dimension gradient-index lens 2 is that cylindrical side, the laser-emitting face vertical with the laser quick shaft direction is the plane vertical with the laser quick shaft direction, and the radius of curvature R 1 of laser entrance face cylindrical side is 0.1mm.The physical dimension of one dimension gradient-index lens 2 is identical with respective embodiments.One dimension gradient-index lens 2 is identical with respective embodiments with the distance of semiconductor laser 1.The connecting relation of other parts and parts is identical with respective embodiments.
Embodiment 6
In above embodiment 1～3, the laser entrance face of one dimension gradient-index lens 2 is that cylindrical side, the laser-emitting face vertical with the laser quick shaft direction is the plane vertical with the laser quick shaft direction, and the radius of curvature R 1 of laser entrance face cylindrical side is 5mm.The physical dimension of one dimension gradient-index lens 2 is identical with respective embodiments.One dimension gradient-index lens 2 is identical with respective embodiments with the distance of semiconductor laser 1.The connecting relation of other parts and parts is identical with respective embodiments.
Embodiment 7
In above embodiment 1～3, the laser entrance face of one dimension gradient-index lens 2 is that cylindrical side, the laser-emitting face vertical with the laser quick shaft direction is the cylindrical side vertical with the laser quick shaft direction, the radius of curvature R 1 of laser entrance face cylindrical side is 2.5mm, and the radius of curvature R 2 of laser-emitting face cylindrical side is 2.5mm.The physical dimension of one dimension gradient-index lens 2 is identical with respective embodiments.One dimension gradient-index lens 2 is identical with respective embodiments with the distance of semiconductor laser 1.The connecting relation of other parts and parts is identical with respective embodiments.
Embodiment 8
In above embodiment 1～3, the laser entrance face of one dimension gradient-index lens 2 is that cylindrical side, the laser-emitting face vertical with the laser quick shaft direction is the cylindrical side vertical with the laser quick shaft direction, the radius of curvature R 1 of laser entrance face cylindrical side is 0.1mm, and the radius of curvature R 2 of laser-emitting face cylindrical side is 0.1mm.The physical dimension of one dimension gradient-index lens 2 is identical with respective embodiments.One dimension gradient-index lens 2 is identical with respective embodiments with the distance of semiconductor laser 1.The connecting relation of other parts and parts is identical with respective embodiments.
Embodiment 9
In above embodiment 1～3, the laser entrance face of one dimension gradient-index lens 2 is that cylindrical side, the laser-emitting face vertical with the laser quick shaft direction is the cylindrical side vertical with the laser quick shaft direction, the radius of curvature R 1 of laser entrance face cylindrical side is 5mm, and the radius of curvature R 2 of laser-emitting face cylindrical side is 5mm.The physical dimension of one dimension gradient-index lens 2 is identical with respective embodiments.One dimension gradient-index lens 2 is identical with respective embodiments with the distance of semiconductor laser 1.The connecting relation of other parts and parts is identical with respective embodiments.
In order to verify the beneficial effects of the utility model, the inventor adopts the semiconductor laser shaper of the utility model embodiment 1 preparation to test, and test situation is as follows:
The wavelength that semiconductor laser 1 sends is 650nm, is 32 ° in semiconductor laser quick shaft direction (x direction) angle of divergence, and through 8 ° of one dimension gradient-index lens 2 back boil down tos, beam radius is 66um, sees Fig. 5.In semiconductor laser slow-axis direction (y direction) angle of divergence is 8 °, does not change angle through lens 2, still is 8 °, and beam radius is 66um also, sees Fig. 6.After the shaping through the fast axle of one dimension gradient-index lens 2 noise spectra of semiconductor lasers, light beam becomes fast axle and the slow-axis direction dispersion angle is 8 °, and the Gaussian beam ovality is 1, and beam radius is the circular Gaussian beam of 66um.Measurement result, after process L1 was the distance of 100mm, circle spot radius A1 was 7.5mm, after process L2 was the distance of 250mm, circle spot radius A2 was 17.5mm.According to the beam divergence angle computing formula
A is a spot radius in the formula, and L is the beam propagation distance, and 2 θ are the beam divergence angle full-shape.With A1 is that 7.5mm, L1 are 100mm substitution following formula, and getting 2 θ 1 is 8.6 degree.With A2 is 17.5mm, and L1 is a 250mm substitution following formula, and getting 2 θ 2 is 8 degree.
Can calculate by spot radius and propagation distance that beam divergence angle is 8 degree after the shaping.
Claims (10)
1, a kind of semiconductor laser shaper, it is characterized in that: semiconductor laser (1) is set on support (3), one dimension gradient-index lens (2) is set on the direction of support (3) semiconductor-on-insulator laser (1) outgoing laser beam, one dimension gradient-index lens (2) is a flat-plate lens, laser is along the thickness direction incident of one dimension gradient-index lens (2), the laser entrance face of one dimension gradient-index lens (2) is plane or the cylindrical side vertical with the laser quick shaft direction, laser-emitting face is plane or the cylindrical side vertical with the laser quick shaft direction, and one dimension gradient-index lens (2) is 0.05～2.5mm with the distance of semiconductor laser (1).
2, according to the described semiconductor laser shaper of claim 1, it is characterized in that: said one dimension gradient-index lens (2) is to have refractive index according to following formula
The rectangular flat lens that distribute, n in the formula
0Be the refractive index of lens centre, n
0Be 1.5～1.7, x is certain some distance apart from the lens centre in the lens,
Be to focus on constant, the thickness of one dimension gradient-index lens 2 is that 0.1～2mm, logical light length are that 0.1～9.5mm, width are 0.1～8mm, focusing constant
Be 0.36～7.5.
3, according to the described semiconductor laser shaper of claim 2, it is characterized in that: said one dimension gradient-index lens (2) wherein thickness is that 0.1～1.5mm, logical light length are that 1～8mm, width are 0.5～6mm, focusing constant
Be 1～6.
4, according to the described semiconductor laser shaper of claim 2, it is characterized in that: said one dimension gradient-index lens (2) wherein thickness is that 0.3mm, logical light length are that 1.5mm, width are 2mm, focusing constant
Be 2.51.
5, according to the described semiconductor laser shaper of claim 1, it is characterized in that: the radius of curvature R 1 of the laser incident cylindrical side of said one dimension gradient-index lens (2) is that the radius of curvature R 2 of 0.1～5mm, laser emitting cylindrical side is 0.1～5mm.
6, according to the described semiconductor laser shaper of claim 3, it is characterized in that: the radius of curvature R 1 of the laser entrance face cylindrical side of said one dimension gradient-index lens (2) wherein is that the radius of curvature R 2 of 0.2～4mm, laser-emitting face cylindrical side wherein is 0.2～4mm.
7, according to the described semiconductor laser shaper of claim 3, it is characterized in that: the radius of curvature R 1 of the laser entrance face cylindrical side of said one dimension gradient-index lens (2) wherein wherein is 2.5mm for the radius of curvature R 2 of 2.5mm, laser-emitting face cylindrical side.
8, according to claim 5 or 6 described semiconductor laser shapers, it is characterized in that: the radius of curvature R 1 of the laser incident cylindrical side of said one dimension gradient-index lens (2) is identical with the radius of curvature R 2 of laser emitting cylindrical side.
9, according to the described semiconductor laser shaper of claim 1, it is characterized in that: said one dimension gradient-index lens (2) wherein is 0.1～0.8mm with the distance of semiconductor laser 1.
10, according to the described semiconductor laser shaper of claim 1, it is characterized in that: said one dimension gradient-index lens (2) wherein is 0.2mm with the distance of semiconductor laser (1).
Priority Applications (1)
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|---|---|---|---|
| CN 200620135940 CN200956493Y (en) | 2006-10-12 | 2006-10-12 | Semiconductor laser shaping device |
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| CN 200620135940 CN200956493Y (en) | 2006-10-12 | 2006-10-12 | Semiconductor laser shaping device |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100456581C (en) * | 2006-10-12 | 2009-01-28 | 飞秒光电科技(西安)有限公司 | Semiconductor laser shaper |
| CN101545582B (en) * | 2009-05-05 | 2011-01-05 | 浙江大学 | Beam shaping illumination system of semiconductor laser array |
| CN107450187A (en) * | 2017-09-29 | 2017-12-08 | 福州腾景光电科技有限公司 | A kind of collimating and correcting device applied to big ellipse light spot |
| CN111653659A (en) * | 2020-07-16 | 2020-09-11 | 湖北大学 | Device for reducing divergence angle of light emitted by light emitting diode and manufacturing method thereof |
-
2006
- 2006-10-12 CN CN 200620135940 patent/CN200956493Y/en not_active Expired - Lifetime
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100456581C (en) * | 2006-10-12 | 2009-01-28 | 飞秒光电科技(西安)有限公司 | Semiconductor laser shaper |
| CN101545582B (en) * | 2009-05-05 | 2011-01-05 | 浙江大学 | Beam shaping illumination system of semiconductor laser array |
| CN107450187A (en) * | 2017-09-29 | 2017-12-08 | 福州腾景光电科技有限公司 | A kind of collimating and correcting device applied to big ellipse light spot |
| CN107450187B (en) * | 2017-09-29 | 2024-03-22 | 腾景科技股份有限公司 | Collimation shaping device applied to large elliptical light spots |
| CN111653659A (en) * | 2020-07-16 | 2020-09-11 | 湖北大学 | Device for reducing divergence angle of light emitted by light emitting diode and manufacturing method thereof |
| CN111653659B (en) * | 2020-07-16 | 2021-05-18 | 湖北大学 | Device for reducing divergence angle of light emitted by light emitting diode and manufacturing method thereof |
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Effective date of abandoning: 20090128 |
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