CN1992241A

CN1992241A - Memory module integrated structure

Info

Publication number: CN1992241A
Application number: CN 200510132924
Authority: CN
Inventors: 张弘
Original assignee: Giga Byte Technology Co Ltd
Current assignee: Giga Byte Technology Co Ltd
Priority date: 2005-12-28
Filing date: 2005-12-28
Publication date: 2007-07-04

Abstract

A memory module integrated structure can speed up the exclusion of the generated heat of the high-speed memory cached chip of fully cached dual-line direct-insert memory modules, including at least one fully cached dual-line direct-insert memory module, as well as a cooling device. The said fully cached dual-line direct-insert memory module comprises one first board, at least one memory module, one high-speed cached memory chip, and one heat-radiation slide. The memory module is installed in the first board, and the high-speed memory cached chip attached to the top of the memory module, and the heat-radiation slide connected to the high-speed memory cached chip. The said heat-radiation slide is installed above the fully cached dual-line direct-insert memory module, and connected with the heat-radiation slide. The heat generated by the high-speed memory cached chip is transmitted by the heat-radiation slide to the heat-radiation device, and transmitted to the outside world through the heat radiation device, to avoid the overheating of the server system.

Description

Memory module integrated structure

Technical field

The present invention is relevant for a kind of memory module integrated structure, particularly relevant for a kind of memory module integrated structure that promotes radiating effect.

Background technology

In general, (Dual In-line Memory Module, DIMM), the running of its DDR2 memory modules is controlled by a single core central processing unit (CPU) with regard to traditional dual inline memory modules.Yet, in the server system architecture of a new generation, its central processing unit will be promoted as the form of 64 double-cores (64bit/dual core) comprehensively, and its memory modules also will change into the full buffer dual inline memory modules (Fully Buffered Dual In-line Memory Module, FBDIMM).

See also Fig. 1, on a motherboard 2 of a server system, be plugged with several full buffer dual inline memory modules 1, and each full buffer dual inline memory modules 1 is except still having several DDR2 memory modules 10, it also has a high-speed memory buffer chip (Advanced MemoryBuffer chip in addition, AMB chip) 11, this high-speed memory buffer chip 11 can quicken the frequency of full buffer dual inline memory modules 1 and strengthen its frequency range.It should be noted that above-mentioned high-speed memory buffer chip 11 is on one of them the DDR2 memory modules 10 that is arranged in the full buffer dual inline memory modules 1.

As mentioned above, because the power of high-speed memory buffer chip 11 when full speed running can reach 4 ~ 6 watts, so will produce extra heat.Therefore, still as shown in Figure 1, on high-speed memory buffer chip 11, also can be attached with a copper sheet 12 and help high-speed memory buffer chip 11 and dispel the heat.Yet, in present specification is in the rack-mount server system architecture of 1U (ccontaining height is 44.45 millimeters), because the restriction in its space, so the additional heat that contains the full buffer dual inline memory modules 1 of copper sheet 12 and can't effectively high-speed memory buffer chip 11 be produced is got rid of, thereby can cause superheating phenomenon to whole server system.

Summary of the invention

The objective of the invention is to provide a kind of memory module integrated structure, can quicken to get rid of the additional heat that the high-speed memory buffer chip of full buffer dual inline memory modules is produced, and takes place to avoid superheating phenomenon.

The present invention adopts following technical scheme to address the above problem basically.That is to say, memory module integrated structure of the present invention comprises at least one full buffer dual inline memory modules, have one first plate body, at least one memory modules, a high-speed memory buffer chip and a conducting strip, wherein, this memory modules is arranged among this first plate body, this high-speed memory buffer chip is attached on this memory modules, and this conducting strip is connected in this high-speed memory buffer chip; An and heat abstractor, be arranged on this full buffer dual inline memory modules, and be connected in this conducting strip, wherein, the heat that this high-speed memory buffer chip operation is produced conducts to this heat abstractor via this conducting strip, and conducts to the external world via this heat abstractor.

Simultaneously, according to memory module integrated structure of the present invention, this conducting strip is parallel to this first plate body, this heat abstractor has one second plate body and at least one clamping connection portion, this second plate body is arranged on this first plate body, and perpendicular to this first plate body, and this clamping connection portion extends to this conducting strip from this second plate body, and this conducting strip of clamping connection.

The present invention also has following technical characterictic, and described clamping connection portion comprises two parallel intermediate plates, and conducting strip is between this intermediate plate.

The present invention also has following technical characterictic, is coated with thermal grease between this conducting strip and each intermediate plate.

The present invention also has following technical characterictic, is provided with a heat conductive pad between this conducting strip and each intermediate plate.

The present invention also has following technical characterictic, and this heat abstractor and this conducting strip are made by metal.

The present invention also has following technical characterictic, and this heat abstractor and this conducting strip are made by copper or aluminium.

Because adopt above technical scheme, when the high-speed memory buffer chip operate, the additional heat that it produced can conduct to heat abstractor via conducting strip, and then conduct or dissipate to the external world via heat abstractor.Therefore, the superheating phenomenon of server system can be avoided taking place.

Description of drawings

Fig. 1 is the application schematic diagram of prior art full buffer dual inline memory modules;

Fig. 2 is the schematic perspective view of memory module integrated structure of the present invention;

Fig. 3 is the decomposing schematic representation of memory module integrated structure of the present invention;

Fig. 4 is the partial schematic diagram of memory module integrated structure of the present invention.

Embodiment

For above-mentioned purpose of the present invention, feature and advantage can be become apparent, preferred embodiment cited below particularly also elaborates in conjunction with the accompanying drawings.

See also Fig. 2 and Fig. 3, present embodiment memory module integrated structure 100 can be applicable among the server system, and is plugged on the motherboard 200.

Still as shown in Figures 2 and 3, memory module integrated structure 100 mainly includes several full buffer dual inline memory modules (Fully Buffered Dual In-line Memory Module, FBDIMM) 110 and one heat abstractor 120.

Each full buffer dual inline memory modules 110 (for example has one first plate body 111, several memory modules, the DDR2 memory modules) 112, one high-speed memory buffer chip (Advanced MemoryBuffer chip, AMB chip), 113 and one conducting strip 114.Memory modules 112 is arranged among first plate body 111, and high-speed memory buffer chip 113 is attached on one of them memory modules 112.Conducting strip 114 is attached on the high-speed memory buffer chip 113, and conducting strip 114 is parallel to first plate body 111.

Heat abstractor 120 is arranged on several full buffer dual inline memory modules 110, and is connected in several conducting strips 114 simultaneously.More detailed, heat abstractor 120 has one second plate body 121 and several clamping connection portions 122.Second plate body 121 is arranged on several first plate bodys 111, and perpendicular to several first plate bodys 111.Each clamping connection portion 122 all extends to each conducting strip 114 from second plate body 121, and each clamping connection portion 122 each conducting strip 114 of clamping connection all.Among present embodiment, each clamping connection portion 122 also includes two parallel intermediate plate 122a, and when each clamping connection portion 122 each conducting strip 114 of clamping connection, conducting strip 114 is between two intermediate plate 122a.In addition, between conducting strip 114 and each intermediate plate 122a, can apply thermal grease, perhaps, as shown in Figure 4, between conducting strip 114 and each intermediate plate 122a, a heat conductive pad 123 can be set.The purpose that applies thermal grease or heat conductive pad 123 is set is for fear of producing the gap between conducting strip 114 and each intermediate plate 122a, and has influence on the thermal conduction effect between conducting strip 114 and the intermediate plate 122a.In addition, heat abstractor 120 can be made by metal (for example copper or aluminium).

As mentioned above, when high-speed memory buffer chip 113 operation, the additional heat that it produced can conduct to heat abstractor 120 via conducting strip 114, and then via heat abstractor 120 conduction or dissipate to the external world.Therefore, the superheating phenomenon of server system can be avoided taking place.

Claims

1. memory module integrated structure, it is characterized in that, comprise: at least one full buffer dual inline memory modules, has one first plate body, at least one memory modules, an one high-speed memory buffer chip and a conducting strip, wherein, this memory modules is arranged on this first plate body, this high-speed memory buffer chip is attached on this first plate body, this conducting strip is attached to this high-speed memory buffer chip, wherein: described memory module integrated structure also comprises a heat abstractor, be arranged on the described full buffer dual inline memory modules, and be connected in described conducting strip.

2. memory module integrated structure according to claim 1, it is characterized in that described heat abstractor has one second plate body and at least one clamping connection portion, this second plate body is arranged on this first plate body, described clamping connection portion extends to conducting strip from second plate body, and this conducting strip of clamping connection.

3. memory module integrated structure according to claim 2 is characterized in that, described second plate body is perpendicular to first plate body.

4. memory module integrated structure according to claim 2 is characterized in that, described clamping connection portion comprises two parallel intermediate plates, and described conducting strip is between this intermediate plate.

5. memory module integrated structure according to claim 4 is characterized in that, is coated with thermal grease between described conducting strip and each intermediate plate.

6. memory module integrated structure according to claim 4 is characterized in that, is provided with a heat conductive pad between described conducting strip and each intermediate plate.

7. memory module integrated structure according to claim 1 and 2 is characterized in that described heat abstractor is made by metal.

8. memory module integrated structure according to claim 7 is characterized in that described heat abstractor is made by copper.

9. memory module integrated structure according to claim 7 is characterized in that described heat abstractor is made by aluminium.